CN100423286C - 具有最小寄生现象的晶体管结构及其制造方法 - Google Patents
具有最小寄生现象的晶体管结构及其制造方法 Download PDFInfo
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- CN100423286C CN100423286C CNB2005100524281A CN200510052428A CN100423286C CN 100423286 C CN100423286 C CN 100423286C CN B2005100524281 A CNB2005100524281 A CN B2005100524281A CN 200510052428 A CN200510052428 A CN 200510052428A CN 100423286 C CN100423286 C CN 100423286C
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- emitter
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- bipolar transistor
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Images
Classifications
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66272—Silicon vertical transistors
- H01L29/66287—Silicon vertical transistors with a single crystalline emitter, collector or base including extrinsic, link or graft base formed on the silicon substrate, e.g. by epitaxy, recrystallisation, after insulating device isolation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0804—Emitter regions of bipolar transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0821—Collector regions of bipolar transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42308—Gate electrodes for thyristors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66242—Heterojunction transistors [HBT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
- H01L29/7371—Vertical transistors
- H01L29/7378—Vertical transistors comprising lattice mismatched active layers, e.g. SiGe strained layer transistors
Abstract
Description
Claims (16)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/789,282 | 2004-02-27 | ||
US10/789,282 US7075126B2 (en) | 2004-02-27 | 2004-02-27 | Transistor structure with minimized parasitics and method of fabricating the same |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1661810A CN1661810A (zh) | 2005-08-31 |
CN100423286C true CN100423286C (zh) | 2008-10-01 |
Family
ID=34887239
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005100524281A Active CN100423286C (zh) | 2004-02-27 | 2005-02-25 | 具有最小寄生现象的晶体管结构及其制造方法 |
Country Status (4)
Country | Link |
---|---|
US (4) | US7075126B2 (zh) |
JP (1) | JP4898125B2 (zh) |
CN (1) | CN100423286C (zh) |
TW (1) | TWI329886B (zh) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102004044678B4 (de) * | 2004-09-09 | 2006-08-31 | Infineon Technologies Ag | Verfahren zum Herstellen eines Kondensators |
DE102004053394B4 (de) * | 2004-11-05 | 2010-08-19 | Atmel Automotive Gmbh | Halbleiteranordnung und Verfahren zur Herstellung einer Halbleiteranordnung |
KR100668833B1 (ko) * | 2004-12-17 | 2007-01-16 | 주식회사 하이닉스반도체 | 반도체소자의 캐패시터 제조방법 |
US20080050883A1 (en) * | 2006-08-25 | 2008-02-28 | Atmel Corporation | Hetrojunction bipolar transistor (hbt) with periodic multilayer base |
US20070054460A1 (en) * | 2005-06-23 | 2007-03-08 | Atmel Corporation | System and method for providing a nanoscale, highly selective, and thermally resilient silicon, germanium, or silicon-germanium etch-stop |
US20060292809A1 (en) * | 2005-06-23 | 2006-12-28 | Enicks Darwin G | Method for growth and optimization of heterojunction bipolar transistor film stacks by remote injection |
US7459367B2 (en) | 2005-07-27 | 2008-12-02 | International Business Machines Corporation | Method of forming a vertical P-N junction device |
US8530934B2 (en) | 2005-11-07 | 2013-09-10 | Atmel Corporation | Integrated circuit structures containing a strain-compensated compound semiconductor layer and methods and systems related thereto |
CN100361281C (zh) * | 2005-11-11 | 2008-01-09 | 中国电子科技集团公司第五十五研究所 | 半导体平台工艺 |
US7342293B2 (en) * | 2005-12-05 | 2008-03-11 | International Business Machines Corporation | Bipolar junction transistors (BJTS) with second shallow trench isolation (STI) regions, and methods for forming same |
US20070148890A1 (en) * | 2005-12-27 | 2007-06-28 | Enicks Darwin G | Oxygen enhanced metastable silicon germanium film layer |
US20070262295A1 (en) * | 2006-05-11 | 2007-11-15 | Atmel Corporation | A method for manipulation of oxygen within semiconductor materials |
US7781295B1 (en) * | 2006-07-13 | 2010-08-24 | National Semiconductor Corporation | System and method for providing a single deposition emitter/base in a bipolar junction transistor |
US7390720B2 (en) * | 2006-10-05 | 2008-06-24 | International Business Machines Corporation | Local collector implant structure for heterojunction bipolar transistors and method of forming the same |
US7569913B2 (en) * | 2006-10-26 | 2009-08-04 | Atmel Corporation | Boron etch-stop layer and methods related thereto |
US7495250B2 (en) * | 2006-10-26 | 2009-02-24 | Atmel Corporation | Integrated circuit structures having a boron- and carbon-doped etch-stop and methods, devices and systems related thereto |
US7550758B2 (en) | 2006-10-31 | 2009-06-23 | Atmel Corporation | Method for providing a nanoscale, high electron mobility transistor (HEMT) on insulator |
US7927958B1 (en) | 2007-05-15 | 2011-04-19 | National Semiconductor Corporation | System and method for providing a self aligned bipolar transistor using a silicon nitride ring |
US7910447B1 (en) | 2007-05-15 | 2011-03-22 | National Semiconductor Corporation | System and method for providing a self aligned bipolar transistor using a simplified sacrificial nitride emitter |
US7838375B1 (en) | 2007-05-25 | 2010-11-23 | National Semiconductor Corporation | System and method for providing a polyemit module for a self aligned heterojunction bipolar transistor architecture |
US7982282B2 (en) | 2008-04-25 | 2011-07-19 | Freescale Semiconductor, Inc. | High efficiency amplifier with reduced parasitic capacitance |
JP2010251368A (ja) * | 2009-04-10 | 2010-11-04 | Renesas Electronics Corp | バイポーラトランジスタ及びその製造方法 |
US8610174B2 (en) * | 2011-11-30 | 2013-12-17 | International Business Machines Corporation | Bipolar transistor with a raised collector pedestal for reduced capacitance |
TW201403782A (zh) * | 2012-07-04 | 2014-01-16 | Ind Tech Res Inst | 基底穿孔的製造方法、矽穿孔結構及其電容控制方法 |
US9312370B2 (en) * | 2014-06-10 | 2016-04-12 | Globalfoundries Inc. | Bipolar transistor with extrinsic base region and methods of fabrication |
US9245951B1 (en) | 2014-09-16 | 2016-01-26 | Globalfoundries Inc. | Profile control over a collector of a bipolar junction transistor |
US9786770B1 (en) * | 2016-10-06 | 2017-10-10 | Nxp Usa, Inc. | Semiconductor device structure with non planar slide wall |
CN106783542A (zh) * | 2016-12-23 | 2017-05-31 | 苏州工业园区纳米产业技术研究院有限公司 | Lpcvd法沉积硅锗膜的方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1231506A (zh) * | 1998-04-07 | 1999-10-13 | 日本电气株式会社 | 高速和低寄生电容的半导体器件及其制造方法 |
WO2002043132A1 (en) * | 2000-11-22 | 2002-05-30 | Conexant Systems, Inc. | Method for fabricating a self-aligned emitter in a bipolar transistor |
US20020096742A1 (en) * | 2001-01-25 | 2002-07-25 | International Business Machines Corporation | ESD robust silicon germanium transistor with emitter NP-block mask extrinsic base ballasting resistor with doped facet region |
US6649482B1 (en) * | 2001-06-15 | 2003-11-18 | National Semiconductor Corporation | Bipolar transistor with a silicon germanium base and an ultra small self-aligned polysilicon emitter and method of forming the transistor |
CN1466225A (zh) * | 2002-06-05 | 2004-01-07 | 联华电子股份有限公司 | 双载子晶体管及其制造方法 |
US20040014271A1 (en) * | 2002-07-18 | 2004-01-22 | International Business Machines Corporation | Diffused extrinsic base and method for fabrication |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02237076A (ja) | 1989-03-09 | 1990-09-19 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH02256242A (ja) | 1989-03-29 | 1990-10-17 | Toshiba Corp | 半導体装置およびその製造方法 |
JPH07130759A (ja) | 1993-10-28 | 1995-05-19 | Sony Corp | 半導体集積回路装置 |
JP3172031B2 (ja) | 1994-03-15 | 2001-06-04 | 株式会社東芝 | 半導体装置の製造方法 |
US5619359A (en) | 1994-11-16 | 1997-04-08 | Nec Research Institute, Inc. | Optoelectronic apparatus |
JPH08293481A (ja) | 1995-04-24 | 1996-11-05 | Hitachi Ltd | パターン形成方法および素子形成方法 |
EP0818829A1 (en) * | 1996-07-12 | 1998-01-14 | Hitachi, Ltd. | Bipolar transistor and method of fabricating it |
JPH10261647A (ja) | 1997-03-18 | 1998-09-29 | Sony Corp | バイポーラ型半導体装置及びその製造方法 |
JP3352941B2 (ja) | 1998-04-21 | 2002-12-03 | 株式会社東芝 | 半導体装置 |
US20010002061A1 (en) * | 1997-09-29 | 2001-05-31 | Johnson F. Scott | Self-aligned in situ doped plug emitter |
JPH11330088A (ja) | 1998-05-15 | 1999-11-30 | Nec Corp | 半導体装置とその製造方法 |
FR2779571B1 (fr) | 1998-06-05 | 2003-01-24 | St Microelectronics Sa | Procede de dopage selectif du collecteur intrinseque d'un transistor bipolaire vertical a base epitaxiee |
US6346453B1 (en) * | 2000-01-27 | 2002-02-12 | Sige Microsystems Inc. | Method of producing a SI-GE base heterojunction bipolar device |
US6595700B2 (en) | 2000-04-04 | 2003-07-22 | Shipley Company, L.L.C. | Optoelectronic packages having insulation layers |
US6848839B2 (en) | 2000-04-07 | 2005-02-01 | Shipley Company, L.L.C. | Methods and devices for coupling optoelectronic packages |
WO2002050880A1 (fr) | 2000-12-20 | 2002-06-27 | Sony Corporation | Procede de cristallisation en phase vapeur, procede de production de semiconducteur, et procede de production pour dispositif a semiconducteur |
JP2002250846A (ja) | 2001-02-26 | 2002-09-06 | Seiko Epson Corp | 光モジュール及びその製造方法並びに光伝達装置 |
JP2002334889A (ja) | 2001-05-10 | 2002-11-22 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
US6927476B2 (en) * | 2001-09-25 | 2005-08-09 | Internal Business Machines Corporation | Bipolar device having shallow junction raised extrinsic base and method for making the same |
JP4078887B2 (ja) | 2002-06-05 | 2008-04-23 | ソニー株式会社 | 半導体装置及び同半導体装置の製造方法 |
-
2004
- 2004-02-27 US US10/789,282 patent/US7075126B2/en not_active Expired - Fee Related
-
2005
- 2005-02-04 TW TW094103743A patent/TWI329886B/zh not_active IP Right Cessation
- 2005-02-22 JP JP2005045016A patent/JP4898125B2/ja not_active Expired - Fee Related
- 2005-02-25 CN CNB2005100524281A patent/CN100423286C/zh active Active
-
2006
- 2006-07-05 US US11/481,070 patent/US7253070B2/en not_active Expired - Fee Related
-
2007
- 2007-06-18 US US11/764,388 patent/US7491617B2/en not_active Expired - Fee Related
-
2009
- 2009-02-05 US US12/366,425 patent/US7642569B2/en not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1231506A (zh) * | 1998-04-07 | 1999-10-13 | 日本电气株式会社 | 高速和低寄生电容的半导体器件及其制造方法 |
WO2002043132A1 (en) * | 2000-11-22 | 2002-05-30 | Conexant Systems, Inc. | Method for fabricating a self-aligned emitter in a bipolar transistor |
US20020096742A1 (en) * | 2001-01-25 | 2002-07-25 | International Business Machines Corporation | ESD robust silicon germanium transistor with emitter NP-block mask extrinsic base ballasting resistor with doped facet region |
US6649482B1 (en) * | 2001-06-15 | 2003-11-18 | National Semiconductor Corporation | Bipolar transistor with a silicon germanium base and an ultra small self-aligned polysilicon emitter and method of forming the transistor |
CN1466225A (zh) * | 2002-06-05 | 2004-01-07 | 联华电子股份有限公司 | 双载子晶体管及其制造方法 |
US20040014271A1 (en) * | 2002-07-18 | 2004-01-22 | International Business Machines Corporation | Diffused extrinsic base and method for fabrication |
Also Published As
Publication number | Publication date |
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US20070241428A1 (en) | 2007-10-18 |
JP2005244225A (ja) | 2005-09-08 |
CN1661810A (zh) | 2005-08-31 |
US7075126B2 (en) | 2006-07-11 |
US20060249814A1 (en) | 2006-11-09 |
TW200535939A (en) | 2005-11-01 |
US7491617B2 (en) | 2009-02-17 |
US7253070B2 (en) | 2007-08-07 |
US20090134429A1 (en) | 2009-05-28 |
US20050191911A1 (en) | 2005-09-01 |
TWI329886B (en) | 2010-09-01 |
US7642569B2 (en) | 2010-01-05 |
JP4898125B2 (ja) | 2012-03-14 |
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