CN100435359C - Semiconductor light-emitting component and its manufacturing method - Google Patents

Semiconductor light-emitting component and its manufacturing method Download PDF

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CN100435359C
CN100435359C CNB2004100849221A CN200410084922A CN100435359C CN 100435359 C CN100435359 C CN 100435359C CN B2004100849221 A CNB2004100849221 A CN B2004100849221A CN 200410084922 A CN200410084922 A CN 200410084922A CN 100435359 C CN100435359 C CN 100435359C
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impurity
semiconductor light
layer
doped film
emitting elements
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CN1758450A (en
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黄宝亿
杜全成
吴仁钊
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Epistar Corp
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Epistar Corp
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Abstract

The present invention relates to a semiconductor light-emitting component and a manufacturing method thereof. The semiconductor light-emitting component of the present invention comprises an undoped In<x>Ga<y>Al<z>N film used as an ohm layer; the undoped film is formed between a topmost semiconductor material layer and a transparent conductive oxides material layer. The undoped film used as a tunnel-through layer (which is not bigger than twenty angstroms) is rather thin so that electrons penetrate through a conduction band from a valence electron band and returns to the transparent conductive oxide material layer under the condition that an electric field across the tunnel-through layer is in forward bias voltage. The semiconductor light-emitting component of the present invention has low and stable forward voltage.

Description

Semiconductor light-emitting elements and manufacture method thereof
Technical field
The present invention relates to a kind of semiconductor light-emitting elements and manufacture method thereof, and especially, this semiconductor light-emitting elements comprises that a strong ohm layer is formed between top layer semiconductor material layer and the transparent conductive oxide material layer, makes this semiconductor light-emitting elements have lower and stable forward voltage by this.
Background technology
Transparent conductive oxide material (Transparent conductive oxide), for example, ITO, ZnO, InO or ZrO etc.. material have been used to be coated on the surface of semiconductor light-emitting elements.Be coated on lip-deep transparent conductive oxide material layer (the Transparent conductive oxidelayer of semiconductor light-emitting elements, TCOL), its main function is as the conductive window layer, scatter in order to electric current, and allow light penetration, promote the external quantum efficiency (External quantum efficiency) of semiconductor light-emitting elements.
Yet, because transparent conductive oxide material layer and top layer semiconductor material layer are (for example, P kenel GaN layer) ohmic contact between is not to be the part pipe course, and the main focus of the technology of this type of coating transparent conductive oxide material layer promptly is the forward voltage (V that how to reach low and stable f).Below in detail a plurality of prior arts will be described in detail, and the difficulty of this type of technology will be described.
People such as Okazaki are set forth in No. 566 patents between an ITO floor and the P kenel GaN contact layer and apply a metal intermediary layer (Agent layer) in United States Patent (USP) the 5th, 977, and then reduce the skew of conductive strips.The material that forms above-mentioned intermediary layer comprises Mg, Ni, Au, Zu and Ti.By this, the forward voltage (V of semiconductor light-emitting elements f) be lowered.In addition, people such as Ming-Jiunn propose high-dopant concentration in No. 064 patent and (are higher than 5 * 10 in United States Patent (USP) the 6th, 078 18) P kenel contact layer (for example, InGaN, GaAs, AlGaAs or GaP) as intermediary layer.People such as Suzuki propose optionally doped with high concentration P kenel carrier in United States Patent (USP) the 6th, 479 in No. 836 patents, to form superlattice (Super-lattice), for example, InGaN/GaN, AlGaN/GaN or other combination, and then obtain lower forward voltage (V f).In addition, also the someone proposes with Ni as intermediary layer, and by the oxygen that is spread in the ITO layer, and then be converted to the NiO layer, use the forward voltage (V that reduces semiconductor light-emitting elements f).
Yet, in the above-mentioned technology of utilizing intermediary layer, if not intermediary layer itself can absorb the output light intensity of semiconductor light-emitting elements.Or else be exactly in operating period,, cause the forward voltage (V of semiconductor light-emitting elements between intermediary layer and contact layer because the high-dopant concentration of intermediary layer causes carrier to spread f) unstable most probably.
The ITO layer as current spreading layer promoting the luminous intensity that semiconductor light-emitting elements is exported, and be covered in general Ni/Au transparency conducting layer (Transparent conductive layers, TCLs) on, be existing manufacturing process.For example, people such as Oberman are in being set forth in formation one Au/Ni composite bed as thin as a wafer between ITO floor and the P kenel InGaN contact layer in the 5th, No. 925897 patent of United States Patent (USP).In addition, people such as Lin are in United States Patent (USP) the 6th, 465, propose the transparency conducting layer of point-like in No. 808 patents.Because the transparency conducting layer of point-like has less absorption region, and then allow more light of launching by semiconductor light-emitting elements export.Ludowise is set forth in the transparency conducting layer that forms multilayer between ITO floor and the P kenel GaN contact layer in United States Patent (USP) the 6th, 287 in No. 947 patents.Yet the problem of above-mentioned technology is because the difference or the hydrogen passivation effect (Hydrogen passivation effect) of the surface roughness of epitaxial wafer, makes the forward voltage (V of semiconductor light-emitting elements f) and illumination (I v) reproducibility be on duty mutually.
Though, the ohmic contact layer of many different kenels is arranged, can carry out the function that contacts with ITO layer or including transparent conducting oxide layer.Yet above-mentioned ohmic contact layer is all the N kenel of high concentration and mixes or the doping of P kenel.In the manufacture process of semiconductor light-emitting elements, the environment of manufacturing process similarly is residual oxygen or protium, the as easy as rolling off a log usefulness that has influence on ohmic contact layer.Forward voltage (the V of semiconductor light-emitting elements f) also can cause skew because of the instability of ohmic contact layer quality.
Therefore, a purpose of the present invention is to provide a strong ohm layer at semiconductor light emitting component, makes this semiconductor light-emitting elements have lower and stable forward voltage by this.
Summary of the invention
According to the semiconductor light-emitting elements of of the present invention one preferred specific embodiment, comprise that the sandwich construction, that semiconductor base material, is formed on this semiconductor substrate covers the non-impurity-doped film of this sandwich construction and the transparent conductive oxide material layer of this non-impurity-doped film of covering.This sandwich construction comprises a luminous zone.This non-impurity-doped film is by an In xGa yAl zThe N material forms, wherein x+y+z=1, and 0≤x, y, z≤1.One forward voltage of this semiconductor light-emitting elements is less than or equal to 3.7 volts.
According to the method for of the present invention one preferred specific embodiment manufacturing semiconductor light emitting component, at first, a sandwich construction is formed on the semiconductor base material.This sandwich construction comprises a luminous zone.This sandwich construction provides top layer semiconductor material layer.Then, a non-impurity-doped film forms and covers this top layer semiconductor material layer.This non-impurity-doped film 16 is by an In xGa yAl zN material and form wherein x+y+z=1, and 0≤x, y, z≤1 by an extension manufacturing process.At last, a transparent conductive oxide material layer forms and covers this non-impurity-doped film, to finish this semiconductor light-emitting elements.
Can be further understood by the following detailed description and accompanying drawings about the advantages and spirit of the present invention.
Description of drawings
Fig. 1 is a cross sectional view, in order to describe the structure according to semiconductor light emitting component of the present invention.
Fig. 2 A to Fig. 2 C is a cross sectional view, in order to describe the method according to a manufacturing semiconductor light-emitting elements of the present invention.
Fig. 3 is illustrated in the non-impurity-doped In as tunnel layer xGa yAl zIn the N material membrane, electronics is tunnelled to the situation of conductive strips from valence band 162.
The simple symbol explanation
10: semiconductor light-emitting elements 12: semiconductor substrate
14: sandwich construction 142: top layer semiconductor material layer
16: non-impurity-doped film 162: valence band
164: conductive strips 18: the transparent conductive oxide material layer
Embodiment
Semiconductor light-emitting elements 10 according to of the present invention one preferred specific embodiment is disclosed among Fig. 1, and Fig. 1 describes the structure of this semiconductor light-emitting elements 10 with cross sectional view.
As shown in Figure 1, this semiconductor light-emitting elements 10 comprises that semiconductor base material 12, is formed at non-impurity-doped film (Undoped film) the 16 and one transparent conductive oxide material layer 18 of sandwich construction (Multi-layer structure) 14, one this sandwich construction 14 of covering on this semiconductor substrate 12.
Especially, this sandwich construction comprises a luminous zone (Light emitting region), for example, and a PN junction (PN-junction), a double heterojunction (Double hetero-junction), or a multiple quantum trap (Multiple quantum well).
Especially, this non-impurity-doped film 16 is by an In xGa yAl zThe N material forms, wherein x+y+z=1, and 0≤x, y, z≤1.In a specific embodiment, this non-impurity-doped film 16 is being formed by an extension manufacturing process, and a thickness of these non-impurity-doped 16 films is less than or equal to 20 dusts.
As shown in Figure 1, this sandwich construction 14 comprises top layer semiconductor material layer 142, and this top layer semiconductor material layer 142 contacts with this non-impurity-doped film 16.In a specific embodiment, this top layer semiconductor material layer 142 is selected from GaN, AlGaN, InGaN, or the material in InGaAlN and the similar material forms.Yet, must be able to mate this sandwich construction 14 in order to the material that forms this top layer semiconductor material layer 142.
In a specific embodiment, this transparent conductive oxide material layer 18 is formed by a material that is selected from ITO, ZnO, InO and ZrO and the similar material.
The method of the semiconductor light-emitting elements 10 that is illustrated in the shop drawings 1 is disclosed in Fig. 2 A to Fig. 2 C, and similarly, these are graphic describes intermediate product in the manufacture process and final product with cross sectional view.
At first, shown in Fig. 2 A, the sandwich construction 14 that the epitaxial loayer that is formed in regular turn by multilayer is formed is formed on this semiconductor substrate 12.Especially, this sandwich construction 14 comprises a luminous zone, for example, and a PN junction, a double heterojunction, or a multiple quantum trap.
Be shown in Fig. 2 A equally, this sandwich construction 14 provides this top layer semiconductor material layer 142.
Then, shown in Fig. 2 B, this non-impurity-doped film 16 forms and covers this top layer semiconductor material layer 142.Especially, this non-impurity-doped film 16 is by an In xGa yAl zN material and form wherein x+y+z=1, and 0≤x, y, z≤1 by an extension manufacturing process.In the epitaxial growth process, the THICKNESS CONTROL of this non-impurity-doped film 16 is being less than or equal to 20 dusts.
At last, shown in Fig. 2 C, this transparent conductive oxide material layer 18 forms and covers this non-impurity-doped film 16, to finish this semiconductor light-emitting elements 10.
In the present invention, this non-impurity-doped In xGa yAl zN material membrane 16 is as a contact layer, be nitride semi-conductor material if form this top layer semiconductor material layer 142, and this non-impurity-doped layer 16 and then formation nitride semi-conductor material 142 are connected with good ohmic between the transparent conductive material layer 18.In this example, the material that forms this including transparent conducting oxide layer can be ITO, ZnO, InO, ZrO, or other work function exceeds 3.6eV or electron affinity can exceed In in rank xGa yAl zThe transparent conductive oxide material on the electron affinity energy rank of N material membrane.
In the present invention, this non-impurity-doped InxGayAlzN material membrane is as tunnel layer (Tunneling layer).Shown in Figure 3, because, quite approach (≤20 dust) as the non-impurity-doped film 16 of wearing the tunnel film, cause across this electric field of wearing tunnel film 16 under the situation of forward bias voltage drop, to allow electronics be tunnelled to conductive strips 164, and get back on this transparent conductive oxide material layer 18 from valence band 162.Label Ef among Fig. 3 is Fermi energy (Fermi ' s energy).In addition, according to semiconductor light-emitting elements of the present invention because not as implicit extra energy barrier and the reverse energy barrier of the same case, therefore, can be lower according to the forward voltage of semiconductor light-emitting elements of the present invention.
Enumerate in the table one a plurality of real case with and forward voltage and illumination.Significantly, its forward voltage of the case of enumerating in the table one is rational low-voltage (3.3V～3.7V), and with regard to illumination, be all the semiconductor light-emitting elements of high brightness.In addition, with regard to technological standpoint, the non-impurity-doped film of sincere ohm layer the most provided by the present invention is applicable to other semiconductor light-emitting elements of mentioned surperficial coating TCOL in patent specification not.
Table one
The material of TCOL The material of ohm layer (being all non-impurity-doped) The semi-conducting material of top layer The material of active layer (that is luminous zone) Forward voltage (V) Illumination (mcd.)
ITO In xGa yAl zN P kenel GaN InGaN 3.3 800
ZnO In xGa yAl zN P kenel GaN InGaN 3.7 650
InO In xGa yAl zN P kenel GaN InGaN 3.5 710
ZrO In xGa yAl zN P kenel GaN InGaN 3.6 690
Significantly, this non-impurity-doped film carrier of P kenel, N kenel or common dopant profile that do not mix.Therefore, in according to semiconductor light-emitting elements of the present invention operating period, the situation of carrier diffusion can not take place.By this, the forward voltage according to semiconductor light-emitting elements of the present invention keeps stable in operating period.
Summing up feature of the present invention and advantage is listed below now:
(a) between top layer semiconductor material layer and TCOL, get involved very thin non-impurity-doped In xGa yAl zThe N film, and then form top layer semiconductor material layer and be connected with good ohmic between the TCOL;
(b) non-impurity-doped In xGa yAl zThe N film is as tunnel layer, and its thickness Be Controlled causes the forward voltage of semiconductor light-emitting elements to reach rational low-voltage; And
(c) because the non-impurity-doped film, in according to semiconductor light-emitting elements of the present invention operating period, the situation of carrier diffusion can not take place, and by this, keeps stable according to the forward voltage of semiconductor light-emitting elements of the present invention in operating period.
By the detailed description of above preferred specific embodiment, hope can be known description feature of the present invention and spirit more, and is not to come category of the present invention is limited with above-mentioned disclosed preferred specific embodiment.On the contrary, its objective is that hope can contain in the category that is arranged in claim of the present invention of various changes and tool equality.Therefore, the category of claim of the present invention should be done the broadest explanation according to above-mentioned explanation, contains the arrangement of all possible change and tool identity property to cause it.

Claims (8)

1, a kind of semiconductor light-emitting elements comprises:
The semiconductor base material;
One sandwich construction, this sandwich construction are formed on this semiconductor substrate, and this sandwich construction comprises a luminous zone;
One non-impurity-doped film, this non-impurity-doped film covers this sandwich construction, and this non-impurity-doped film is by an In xGa yAl zThe N material forms, wherein x+y+z=1, and 0≤x, y, z≤1;
One transparent conductive oxide material layer, this non-impurity-doped film of this transparent conductive oxide layer of material covers; And
A forward voltage V of this semiconductor light-emitting elements wherein fBe less than or equal to 3.7 volts.
2, semiconductor light-emitting elements as claimed in claim 1, wherein this non-impurity-doped film to be being formed by an extension manufacturing process, and a thickness of this non-impurity-doped film is less than or equal to 20 dusts.
3, semiconductor light-emitting elements as claimed in claim 1, wherein this luminous zone comprises a structure of choosing from a group that is made up of a PN junction, a double heterojunction and a multiple quantum trap.
4, semiconductor light-emitting elements as claimed in claim 1, wherein this sandwich construction comprises the contact layer of this non-impurity-doped film of contact, and this contact layer is by from being formed by a material of choosing the group that GaN, AlGaN, InGaN and InGaAlN formed.
5, a kind of method of making semiconductor light emitting component comprises the following steps:
On the semiconductor base material, form a sandwich construction, this sandwich construction comprises a luminous zone;
Form the non-impurity-doped film of this sandwich construction of covering, this non-impurity-doped film is by an In xGa yAl zThe N material forms, wherein x+y+z=1, and 0≤x, y, z≤1;
Form the transparent conductive oxide material layer of this non-impurity-doped film of covering; And
A forward voltage V of this semiconductor light-emitting elements wherein fBe less than or equal to 3.7 volts.
6, method as claimed in claim 5, wherein this non-impurity-doped film to be being formed by an extension manufacturing process, and a thickness of this non-impurity-doped film is less than or equal to 20 dusts.
7, method as claimed in claim 5, wherein this luminous zone comprises a structure of choosing from a group that is made up of a PN junction, a double heterojunction and a multiple quantum trap.
8, method as claimed in claim 5, wherein this sandwich construction comprises the contact layer of this non-impurity-doped film of contact, and this contact layer is by from being formed by a material of choosing the group that GaN, AlGaN, InGaN and InGaAlN formed.
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CN101834240B (en) * 2009-03-11 2013-07-03 旭明光电股份有限公司 Light-emitting diode with high-reflectivity contact electrode and manufacturing method thereof
CN104465910A (en) * 2014-12-17 2015-03-25 广东德力光电有限公司 LED chip structure efficiently matched with ZnO thin film and manufacturing method of LED chip structure
CN105957933A (en) * 2016-07-21 2016-09-21 湘能华磊光电股份有限公司 LED epitaxial structure matched with AZO thin film current expansion layer and growth method therefor

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5764673A (en) * 1995-09-25 1998-06-09 Mitsubishi Denki Kabushiki Kaisha Semiconductor light emitting device
US6287947B1 (en) * 1999-06-08 2001-09-11 Lumileds Lighting, U.S. Llc Method of forming transparent contacts to a p-type GaN layer
US6346720B1 (en) * 1995-02-03 2002-02-12 Sumitomo Chemical Company, Limited Layered group III-V compound semiconductor, method of manufacturing the same, and light emitting element
CN1345474A (en) * 1999-03-26 2002-04-17 松下电器产业株式会社 Semiconductors structures using group III-nitride quaternary material system with reduced phase separation and method of fabrication
US6479836B1 (en) * 1999-08-19 2002-11-12 Kabushiki Kaisha Toshiba Semiconductor light emitting device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6346720B1 (en) * 1995-02-03 2002-02-12 Sumitomo Chemical Company, Limited Layered group III-V compound semiconductor, method of manufacturing the same, and light emitting element
US5764673A (en) * 1995-09-25 1998-06-09 Mitsubishi Denki Kabushiki Kaisha Semiconductor light emitting device
CN1345474A (en) * 1999-03-26 2002-04-17 松下电器产业株式会社 Semiconductors structures using group III-nitride quaternary material system with reduced phase separation and method of fabrication
US6287947B1 (en) * 1999-06-08 2001-09-11 Lumileds Lighting, U.S. Llc Method of forming transparent contacts to a p-type GaN layer
US6479836B1 (en) * 1999-08-19 2002-11-12 Kabushiki Kaisha Toshiba Semiconductor light emitting device

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