CN100438110C - LED with the current transfer penetration-enhanced window layer structure - Google Patents
LED with the current transfer penetration-enhanced window layer structure Download PDFInfo
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- CN100438110C CN100438110C CNB200610169829XA CN200610169829A CN100438110C CN 100438110 C CN100438110 C CN 100438110C CN B200610169829X A CNB200610169829X A CN B200610169829XA CN 200610169829 A CN200610169829 A CN 200610169829A CN 100438110 C CN100438110 C CN 100438110C
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
Abstract
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Claims (8)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB200610169829XA CN100438110C (en) | 2006-12-29 | 2006-12-29 | LED with the current transfer penetration-enhanced window layer structure |
PCT/CN2007/003953 WO2008083562A1 (en) | 2006-12-29 | 2007-12-29 | A kind of light emitting diodes with the window layer structure of current spreading and light anti-reflecting |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB200610169829XA CN100438110C (en) | 2006-12-29 | 2006-12-29 | LED with the current transfer penetration-enhanced window layer structure |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1996629A CN1996629A (en) | 2007-07-11 |
CN100438110C true CN100438110C (en) | 2008-11-26 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CNB200610169829XA Expired - Fee Related CN100438110C (en) | 2006-12-29 | 2006-12-29 | LED with the current transfer penetration-enhanced window layer structure |
Country Status (2)
Country | Link |
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CN (1) | CN100438110C (en) |
WO (1) | WO2008083562A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102447027A (en) * | 2011-12-16 | 2012-05-09 | 北京工业大学 | Vertical structure type light-emitting diode with high light extraction window |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100438110C (en) * | 2006-12-29 | 2008-11-26 | 北京太时芯光科技有限公司 | LED with the current transfer penetration-enhanced window layer structure |
CN101388431A (en) * | 2008-11-07 | 2009-03-18 | 沈光地 | Distribution of current blocking layer, LED corresponding to the upper electrode and preparation thereof |
KR101134720B1 (en) * | 2009-02-16 | 2012-04-13 | 엘지이노텍 주식회사 | Semiconductor light emitting device and fabrication method thereof |
CN101807634B (en) * | 2009-02-17 | 2012-04-04 | 罗信明 | High-brightness light emitting diode chip |
CN102054912A (en) * | 2009-11-04 | 2011-05-11 | 大连路美芯片科技有限公司 | Light emitting diode and manufacture method thereof |
CN101807647A (en) * | 2010-03-19 | 2010-08-18 | 厦门市三安光电科技有限公司 | Process for manufacturing AlGaInP light-emitting diode with inclined side face |
KR101666442B1 (en) * | 2010-03-25 | 2016-10-17 | 엘지이노텍 주식회사 | Light emitting diode and Light emitting device comprising the same |
CN101834249A (en) * | 2010-04-23 | 2010-09-15 | 沈光地 | Current transport structure in thin-film type light-emitting diode and preparation method thereof |
CN101969089B (en) * | 2010-09-06 | 2011-10-12 | 厦门市三安光电科技有限公司 | Method for manufacturing gallium nitride-based light-emitting diode with current barrier layer |
CN102208504A (en) * | 2011-05-10 | 2011-10-05 | 北京太时芯光科技有限公司 | Quaternary light emitting diode and preparation method thereof |
CN103078026A (en) * | 2012-10-11 | 2013-05-01 | 光达光电设备科技(嘉兴)有限公司 | Semiconductor light-emitting component and manufacturing method thereof |
TWI583019B (en) * | 2015-02-17 | 2017-05-11 | 新世紀光電股份有限公司 | Light emitting diode and manufacturing method thereof |
KR102506957B1 (en) * | 2016-02-02 | 2023-03-08 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | Light emitting device |
CN105679896B (en) * | 2016-03-28 | 2018-01-19 | 扬州乾照光电有限公司 | A kind of GaAs substrate low-light level Yellow light emitting diode chip and preparation method thereof |
CN106057998A (en) * | 2016-08-10 | 2016-10-26 | 山东浪潮华光光电子股份有限公司 | GaAs-based light emitting diode chip possessing current blocking layer and current extension layer and manufacturing method thereof |
CN112909140A (en) * | 2019-12-04 | 2021-06-04 | 聚灿光电科技(宿迁)有限公司 | Novel high-luminous-efficiency chip with double ITO conductive layers and manufacturing method thereof |
Citations (8)
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US5048035A (en) * | 1989-05-31 | 1991-09-10 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device |
JPH05235408A (en) * | 1992-02-24 | 1993-09-10 | Sharp Corp | Semiconductor light-emitting device and manufacture thereof |
US5789768A (en) * | 1997-06-23 | 1998-08-04 | Epistar Corporation | Light emitting diode having transparent conductive oxide formed on the contact layer |
CN1215931A (en) * | 1997-10-27 | 1999-05-05 | 松下电器产业株式会社 | Light emitting diode device and its mfg. method |
US6121635A (en) * | 1997-04-15 | 2000-09-19 | Kabushiki Kaisha Toshiba | Semiconductor light-emitting element having transparent electrode and current blocking layer, and semiconductor light-emitting including the same |
CN1334607A (en) * | 2000-07-13 | 2002-02-06 | 詹世雄 | High-brightness LED unit and its making method |
CN1365153A (en) * | 2001-01-12 | 2002-08-21 | 联铨科技股份有限公司 | Light-emitting diode |
CN1670972A (en) * | 2003-08-14 | 2005-09-21 | 代康光纤有限公司 | Light emitting diode capable of increasing self light emitting efficiency |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3216700B2 (en) * | 1996-05-22 | 2001-10-09 | サンケン電気株式会社 | Semiconductor light emitting device |
US6057562A (en) * | 1997-04-18 | 2000-05-02 | Epistar Corp. | High efficiency light emitting diode with distributed Bragg reflector |
GB2344457B (en) * | 1998-12-02 | 2000-12-27 | Arima Optoelectronics Corp | Semiconductor devices |
JP4054631B2 (en) * | 2001-09-13 | 2008-02-27 | シャープ株式会社 | Semiconductor light emitting device and method for manufacturing the same, LED lamp, and LED display device |
JP2004128452A (en) * | 2002-07-31 | 2004-04-22 | Shin Etsu Handotai Co Ltd | Method of manufacturing light emitting device, and light emitting device |
JP2005159299A (en) * | 2003-10-30 | 2005-06-16 | Sharp Corp | Semiconductor light emitting element |
CN100438110C (en) * | 2006-12-29 | 2008-11-26 | 北京太时芯光科技有限公司 | LED with the current transfer penetration-enhanced window layer structure |
-
2006
- 2006-12-29 CN CNB200610169829XA patent/CN100438110C/en not_active Expired - Fee Related
-
2007
- 2007-12-29 WO PCT/CN2007/003953 patent/WO2008083562A1/en active Application Filing
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5048035A (en) * | 1989-05-31 | 1991-09-10 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device |
JPH05235408A (en) * | 1992-02-24 | 1993-09-10 | Sharp Corp | Semiconductor light-emitting device and manufacture thereof |
US6121635A (en) * | 1997-04-15 | 2000-09-19 | Kabushiki Kaisha Toshiba | Semiconductor light-emitting element having transparent electrode and current blocking layer, and semiconductor light-emitting including the same |
US5789768A (en) * | 1997-06-23 | 1998-08-04 | Epistar Corporation | Light emitting diode having transparent conductive oxide formed on the contact layer |
CN1215931A (en) * | 1997-10-27 | 1999-05-05 | 松下电器产业株式会社 | Light emitting diode device and its mfg. method |
CN1334607A (en) * | 2000-07-13 | 2002-02-06 | 詹世雄 | High-brightness LED unit and its making method |
CN1365153A (en) * | 2001-01-12 | 2002-08-21 | 联铨科技股份有限公司 | Light-emitting diode |
CN1670972A (en) * | 2003-08-14 | 2005-09-21 | 代康光纤有限公司 | Light emitting diode capable of increasing self light emitting efficiency |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102447027A (en) * | 2011-12-16 | 2012-05-09 | 北京工业大学 | Vertical structure type light-emitting diode with high light extraction window |
Also Published As
Publication number | Publication date |
---|---|
WO2008083562A1 (en) | 2008-07-17 |
CN1996629A (en) | 2007-07-11 |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee | ||
CP03 | Change of name, title or address |
Address after: No. 1 North Ze street, Beijing Economic Development Zone, Beijing Patentee after: Beijing TimesLED Technology Co.,Ltd. Address before: Branch of Beijing economic and Technological Development Zone two Beijing street, No. 4 Building 2 layer 1-4 Southern zip code: 100176 Patentee before: Beijing TimesLED Technology Co.,Ltd. |
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PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: LED with the current transfer penetration-enhanced window layer structure Effective date of registration: 20140404 Granted publication date: 20081126 Pledgee: Zhongguancun Beijing technology financing Company limited by guarantee Pledgor: Beijing TimesLED Technology Co.,Ltd. Registration number: 2014990000234 |
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PLDC | Enforcement, change and cancellation of contracts on pledge of patent right or utility model | ||
PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20160705 Granted publication date: 20081126 Pledgee: Zhongguancun Beijing technology financing Company limited by guarantee Pledgor: Beijing TimesLED Technology Co.,Ltd. Registration number: 2014990000234 |
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PLDC | Enforcement, change and cancellation of contracts on pledge of patent right or utility model | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20081126 Termination date: 20151229 |
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EXPY | Termination of patent right or utility model |