CN100438110C - LED with the current transfer penetration-enhanced window layer structure - Google Patents

LED with the current transfer penetration-enhanced window layer structure Download PDF

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Publication number
CN100438110C
CN100438110C CNB200610169829XA CN200610169829A CN100438110C CN 100438110 C CN100438110 C CN 100438110C CN B200610169829X A CNB200610169829X A CN B200610169829XA CN 200610169829 A CN200610169829 A CN 200610169829A CN 100438110 C CN100438110 C CN 100438110C
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layer
current
type
light
emitting diode
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CN1996629A (en
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沈光地
陈依新
韩金茹
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Beijing TimesLED Technology Co.,Ltd.
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BEIJING TIMESLED TECHNOLOGY CO LTD
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Priority to PCT/CN2007/003953 priority patent/WO2008083562A1/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure

Abstract

This invention relates to one light diode of current streghening window layer structure in semiconductor photo electricity technique, which comprises top electrode, current extensive layer, top limit layer, source area, down limit layer, buffer layer, underlay, down electrode, DBR reflection layer, wherein, the top electrode ad current extensive layer are set with conductive transparent layer; the current block layer is set on or down extensive layer to form current transporting window layer by transparent layer, current extensive layer and current block layer.

Description

A kind of light-emitting diode with current transfer penetration-enhanced window layer structure
Technical field
The current transfer penetration-enhanced window layer structure of introducing in light-emitting diode (LED) relates to a kind of new LED device architecture, belongs to field of semiconductor photoelectron technique.
Background technology
At present, the method for designing of common formal dress structure light-emitting diode and the problem of existence thereof: generally adopt metal organic chemical vapor deposition (MOCVD) to carry out epitaxial growth, device architecture includes from top to bottom top electrode 10, current extending 20, upper limiting layer 30, active area 400, lower limit layer 50, resilient coating 60, substrate 70, the bottom electrode 80 of the storied length of longitudinal layer successively as shown in Figure 1.By injection current, electron hole pair is luminous in the active area radiation recombination, and the photon of generation emits from the front of device.Three subject matters that this kind device exists are:
1. absorb substrate (as GaAs, Si etc.) to luminescent material (as AlGaInP, GaN, ZnO etc.) light of Chan Shenging has strong absorption, make the light that is transmitted into the substrate direction almost be absorbed entirely, finally send, had a strong impact on the further raising of device performance with the form of heat;
2. the refractive index of the refractive index of Window layer material and air differs bigger, and it is external that the light that is transmitted into the device upper surface has only a very little part (about 5%) to be transmitted into, and remaining light overwhelming majority all is reflected and is absorbed by substrate, and the extraction efficiency of light is very low;
3. the ratio that accounts for total injection current of the vertical transport electric current under the electrode (is looked chip size quite greatly, the quality of electrode size and current extending and different), the light that this part electric current produces is because the stopping and absorbs of electrode, not only can not be transmitted into externally, generates heat in vivo on the contrary.
At present, at the problem that substrate absorbs, the way that people propose is: distribution bragg emission (DBR) layer of the high reflection of growth between resilient coating and lower limit layer, can reflect the light of Vertical Launch to the substrate direction, to improve the extraction efficiency of light, as shown in Figure 2.In order to solve the bigger problem of Window layer refractive index, the someone passes through the way of growth anti-reflection film on Window layer, can effectively increase light extraction efficiency, as shown in Figure 3; Another way is the Window layer by grow thick, promptly thick current extending 12, for example: the GaP Window layer of about 50 μ m, as Fig. 4, both increased the expansion of electric current, help the bright dipping of front and side again, improved light extraction efficiency greatly.About solving the bigger problem of electrode below current density, there is the people once to propose between upper limiting layer and current extending, to make the method for current barrier layer abroad, as shown in Figure 5, this method has stopped that effectively electric current directly transports from electrode downwards, increases the expansion of electric current, has improved luminous efficiency, but, the technology that they adopt nearly all is the way of secondary epitaxy, cost height, apparatus expensive.Also the someone makes structure shown in Figure 6, extension one bed thickness 10 μ m on upper limiting layer 30, the thick current extending 12 of resistivity 0.05 Ω cm, extension 0.05 μ m is thick again on it, resistivity is the contact layer 122 of 0.01 Ω cm, the contact layer middle part is etched away again, long then layer of transparent conductive layer 121---in middle part and thick current extending 12 formation Schottky contacts, play barrier function, form conduction with contact layer around and be connected.In fact because the total current ratio contact layer 122 of above-mentioned thick current extending 12 is also strong,, and do not have the effect of current blocking on every side so electric current will be from below contact layer laterally flows to the Schottky barrier barrier layer.Further carrying out ion on the thick current extending that above-mentioned Window layer 12 and contact layer 122 are constituted injects and forms the barrier layer or diffuse to form n-p knot 123, as Fig. 7, but the thickness of current barrier layer in the method or diffusion layer 123 is difficult to accurately control, still there is current extending its below, thereby can not block current flow laterally flow into below, barrier layer under the electrode again from current extending, and thick current extending (8-50 μ m) and ion inject and the diffusion technology complexity, the cost height.Though above-mentioned 6 kinds of methods can both be from solving the subproblem that present light-emitting diode exists in a certain respect, they all can't solve three problems that exist simultaneously effectively.
Summary of the invention
The purpose of this invention is to provide a kind of light-emitting diode with current transfer penetration-enhanced window layer structure, come to solve effectively simultaneously that substrate absorbs, the refractive index of the refractive index of Window layer material and air differs the electric current generation light under big, the electrode and stopped by electrode and absorb this three problems, to improve light extraction efficiency, thereby obtain light-emitting diode efficient, high brightness, its manufacture craft is simple, and cost is low.
The device part comprises among the present invention: the top electrode 10 of the storied length of longitudinal layer, current extending 20, upper limiting layer 30, active area 400, lower limit layer 50, resilient coating 60, substrate 70, bottom electrode 80 successively from top to bottom, between top electrode 10 and current extending 20, be provided with conductive euphotic zone, also comprise the current barrier layer 120 that is arranged on below the current extending 20, this current barrier layer 120 is positioned at the inside of upper limiting layer 300, forms the current transfer penetration-enhanced window layer by conductive euphotic zone, current extending 20 and current barrier layer 120 combinations.
Light-emitting diode with current transfer penetration-enhanced window layer structure of the present invention, can be Fig. 8 and structure shown in Figure 10, include the p-type top electrode 100 of vertically stacked (seeing from top to bottom) respectively, p-type conductive euphotic zone 130, p-type current extending 200, p-type upper limiting layer 300, active area 400, n-type lower limit layer 500, n-type resilient coating 600 and n-type substrate 700, n-type bottom electrode 800, current barrier layer 120 are separately positioned on p-type current extending 200 the insides and p-type upper limiting layer 300 the insides.By the p-type conductive euphotic zone 130 that is arranged in order, current barrier layer 120 and thin p-type current extending 200, constitute p-type current transfer penetration-enhanced window layer 140.Fig. 9 and Figure 11 are structurally Duoed a n-type DBR reflector layer 900 than Fig. 8 and Figure 10 respectively.The light-emitting diode of this current transfer penetration-enhanced window layer structure is characterised in that: because the existence of current barrier layer 120 and conductive euphotic zone 130 is arranged, the electric current that injects from electrode is very natural expand to electrode around, stoped electric current under the p-type electrode 100 directly toward current downflow; The introducing of p-type conductive euphotic zone 130 has brought two effects, the one, increased the angle of bright dipping, the photon that makes active area produce can more be transmitted into external, the 2nd, increased the expansion of electric current, so, just can reduce the thickness of p-type current extending 200 greatly, thereby reduce cost.The p-type current transfer penetration-enhanced window layer 140 that p-type conductive euphotic zone 130, current barrier layer 120 and thin p-type current extending 200 combinations form, increased the expansion of electric current, stoped electric current under electrode, to flow, reduced current loss, reduced hot generation, also played simultaneously light has been carried out anti-reflection effect, so the introducing of this current transfer penetration-enhanced window layer structure has improved light extraction efficiency and the hot saturation characteristic of LED.Experimental result shows that under the 20mA injection current, the light intensity of LED has improved about 70%, and the operate in saturation electric current has increased more than the 20mA.
The top of current transfer penetration-enhanced window layer can also be introduced the structure that anti-reflection film, surface coarsening layer etc. can play anti-reflection effect to luminous energy among the present invention.
The used material of conductive euphotic zone among the present invention can be ITO (tin indium oxide), the material that electroconductive resin also can be other can conduct electricity, printing opacity can play anti-reflection effect again to light.As: among the AlGaInP LED, the ITO layer of refractive index between GaP and air.
Among the present invention the material of current barrier layer 120 can be intrinsic semiconductor, non-conductive resin, the amorphous Si that undopes, Si xN yAnd Si xO yDeng insulating material, also can be electric conducting material with the conductive euphotic zone conductivity type opposite.
What the shape of current barrier layer 120 and size can be with electrodes among the present invention is identical, the identical of electrode of also can getting along well.
Current barrier layer 120 can be made in the inside or the upper limiting layer the inside of current extending among the present invention.
Active area 400 structures are p-n junction among the present invention, or the p-i-n knot, or double-heterostructure, or single quantum, or multi-quantum pit structure, superlattice structure or quantum dot light emitting structure, or multiple layer hetero quantum point structure, or above-mentioned various combination in any structure.
The light-emitting diode of current transfer penetration-enhanced window layer structure can be introduced the DBR reflector layer among the present invention, also can be inverted structure minute surface total reflection structure or partial reflection structure.
The n type is down as described above for its device architecture of the light-emitting diode of the current transfer penetration-enhanced window layer structure among the present invention, and the p type is last, i.e. growth LED structure on n type substrate; Also can be the p type down, the n type be last, promptly on p type substrate growth with above the device architecture put upside down of device architecture, and New type of current transfer penetration-enhanced window layer is the n type.
The shape of top electrode can be other shapes such as circle, star, bar shaped, slotting finger-type among the present invention, and the pressure welding point diameter can be 100 μ m, 80 μ m or other size, and material can be AuZnAu, also can be other electrode material.
The substrate of the light-emitting diode of current transfer penetration-enhanced window layer structure can be the GaAs of forward LED among the present invention, and Si etc. are to the material of visible absorption, also can be the translate substrate material such as copper, gold, Si of flip-chip bonded structure.
N-type electrode can be the AuGeNi of AlGaInP LED among the present invention, also can be the n-type electrode material of the LED of other material system.
The die area of the light-emitting diode of current transfer penetration-enhanced window layer structure can be 225 μ m * 225 μ m among the present invention, and 200 μ m * 200 μ m also can be other sizes.
Main advantages of the present invention:
1) current barrier layer 120 among the LED of current transfer penetration-enhanced window layer structure can be effectively even is fully stoped current transfer under the electrode, and change the conductive window layer of electric current around the electrode into laterally transport expansion, thereby luminous efficiency and light extraction efficiency have been improved, under the same terms, the extraction efficiency of device even can double above.
2) conductive euphotic zone among the LED of current transfer penetration-enhanced window layer structure has not only strengthened laterally transporting of injection current and has expanded, and has also played light is carried out anti-reflection effect, and the photon that makes active area produce more is transmitted into external.
3) combining of current barrier layer 120 and conductive euphotic zone strengthened laterally transporting and expanding of electric current, thereby greatly reduces the thickness of current extending, reduced growth time, thereby saved raw material, reduced device cost.
4) the MOCVD epitaxial growth time of device was reduced to 3 hours by original 4-5 hour, and only the finishing of device preparation that grow into of entire device needs about 12 hours, and technology is simple, and technological process is short.
5),, help work under the big electric current more so device has better hot saturation characteristic because electric current laterally transports with expansion and is enhanced, and no current flows under the electrode does not produce the light and heat that can't export.
6) because the existence of current barrier layer 120 and thin and strong current extending, device size reduces and will not cause reducing of light intensity and luminous power, can obtain the LED of high light large power light output under the small size chip, can improve the output and the output value greatly.
7) have the light-emitting diode of current transfer penetration-enhanced window layer structure, the significant advantage that has is: current loss is little, brightness height, light efficiency height; Manufacture craft is simple, good reproducibility; Device size is little, output value height, and cost is low, is suitable for producing in enormous quantities.
Description of drawings
Fig. 1: the structural representation of common formal dress structure light-emitting diode;
Fig. 2: the structural representation that has the formal dress structure light-emitting diode of DBR reflector layer
Fig. 3: the structural representation that has the formal dress structure light-emitting diode of anti-reflection film
Fig. 4: the structural representation of introducing the formal dress structure light-emitting diode of thick current extending
Fig. 5: the structural representation of introducing the formal dress structure light-emitting diode of current barrier layer by secondary epitaxy technology
Fig. 6: above thick current extending, carry out the formal dress light emitting diode construction schematic diagram that etching forms current blocking
Fig. 7: above thick current extending, diffuse to form the formal dress light emitting diode construction schematic diagram that n-p knot or ion inject the preparation current barrier layer
Fig. 8: formal dress light-emitting diode structure schematic diagram (current barrier layer 120 places the inside of p-type current extending 200) with current transfer penetration-enhanced window layer structure
Fig. 9: formal dress light-emitting diode structure schematic diagram (current barrier layer 120 places the inside of p-type current extending 200, has introduced DBR reflector layer 900 between n-type lower limit layer 500 and n-type resilient coating 600) with current transfer penetration-enhanced window layer structure
Figure 10: formal dress light-emitting diode structure schematic diagram (current barrier layer 120 places the inside of p-type upper limiting layer 300) with current transfer penetration-enhanced window layer structure
Figure 11: formal dress light-emitting diode structure schematic diagram (current barrier layer 120 places the inside of p-type upper limiting layer 300, has introduced DBR reflector layer 900 between n-type lower limit layer 500 and n-type resilient coating 600) with current transfer penetration-enhanced window layer structure
Among the figure: 10 is top electrode, and 20 is current extending, and 30 is upper limiting layer, 400 is active area, 50 is lower limit layer, and 60 is resilient coating, and 70 is substrate, 80 is bottom electrode, 90 is the DBR reflector layer, and 11 is anti-reflection film, and 12 is thick current extending, 120 is current barrier layer, 121 is transparency conducting layer, and 122 is contact layer, and 123 are ion injection or n-p diffusion region, 130 is p-type conductive euphotic zone, 100 is p-type top electrode, and 200 is p-type current extending, and 300 is p-type upper limiting layer, 500 is n-type lower limit layer, 600 is n-type resilient coating, and 700 is n-type substrate, and 800 is n-type bottom electrode, 900 is n-type DBR reflector layer, and 140 is p-type current transfer penetration-enhanced window layer.
Embodiment
Embodiment 1
As shown in Figure 8, be example with AlGaInP LED.This device is made up of following each several part: p-type electrode 100, p-type current extending 200, p-type upper limiting layer 300, active area 400, n-type lower limit layer 500, n-type resilient coating 600, n-type substrate 700, n-type electrode 800, n-type DBR reflector layer 900, and the p-type current transfer penetration-enhanced window layer 140 that constitutes by p-type conductive euphotic zone 130, current barrier layer 120 and p-type current extending 200; Its preparation process and method are as follows:
1. on the n-type substrate 700 that GaAs etc. can form with the AlGaInP matched materials, with MOVCD method epitaxial growth n-type resilient coating 600 successively, n-type lower limit layer 500, active area 400, p-type upper limiting layer 300, p-type current extending 200 has so just obtained the epitaxial wafer of AlGaInP light-emitting diode;
Again by the back technology way: at first epitaxial wafer is cleaned, whirl coating makes the zone that will do the barrier layer by lithography, band glue wet etching, corrosion depth is identical with the thickness of p-type current extending 200, cleans, and utilizes the PECVD system at surface deposition one deck SiO then 2Insulating barrier, thickness is identical with corrosion depth, next, peels off, and has obtained current barrier layer 120, and evaporation last layer conduction light transmissive material ITO layer 130 by these steps, has been finished the making of current transfer penetration-enhanced window layer 140 again;
3. next, at front evaporation layer of Au ZnAu metal level, and directly over current barrier layer 120, make p-type electrode 100 by lithography, whole epitaxial wafer substrate is thinned to about 100-200 μ m, simultaneously evaporate layer of Au GeNi at this of attenuate then and form n-type electrode 800, finished the making of upper/lower electrode; Ready-made epitaxial wafer is cleaved into the tube core of 225 μ m * 225 μ m, and pressure welding is on base;
Device shown in Figure 9 is structurally Duoed the n-type DBR reflector layer 900 of a growth between n-type lower limit layer 500 and n-type resilient coating 600 than Fig. 8, and technologic unique difference is many growths of MOCVD when growth one deck n-type DBR reflector layers 900.
Embodiment 2
As shown in figure 10, be example with AlGaInP LED.This device is made up of following each several part: p-type electrode 100, p-type current extending 200, p-type upper limiting layer 300, active area 400, n-type lower limit layer 500, n-type resilient coating 600, n-type substrate 700, n-type electrode 800, and the p-type current transfer penetration-enhanced window layer 140 that constitutes by p-type conductive euphotic zone 130, current barrier layer 120 and p-type current extending 200; Its preparation process and method are as follows:
1. on the n-type substrate 700 that GaAs etc. can form with the AlGaInP matched materials, with MOVCD method epitaxial growth n-type resilient coating 600 successively, n-type lower limit layer 500, active area 400, p-type upper limiting layer 300, p-type current extending 200 has so just obtained the epitaxial wafer of AlGaInP light-emitting diode;
Again by the back technology way: at first epitaxial wafer is cleaned, whirl coating also makes the zone that will do the barrier layer by lithography, the way of utilizing ion to inject is injected the ion that can play barrier function below this zone current extending, form current barrier layer 120, remove photoresist and clean, evaporation last layer ITO conduction light transmissive material by these steps, has been finished the making of current transfer penetration-enhanced window layer 140 then;
3. next, way with evaporation is evaporated layer of Au ZnAu metal level in the front, and makes p-type top electrode 100 by lithography, and whole epitaxial wafer substrate is thinned to about 100 μ m, simultaneously evaporate layer of Au GeNi at this of attenuate then and form n-type bottom electrode 800, finished the making of upper/lower electrode; Ready-made epitaxial wafer is cleaved into the tube core of 225 μ m * 225 μ m, and pressure welding is on base.
Device shown in Figure 11 is structurally Duoed the n-type DBR reflector layer 900 of a growth between n-type lower limit layer 500 and n-type resilient coating 600 than Figure 10, and technologic unique difference is many growths of MOCVD when growth one deck n-type DBR reflector layers 900.
The above is specific embodiments of the invention only, is not in order to qualification protection scope of the present invention, and all other do not break away from various remodeling and the modification of being carried out in claims scope, all should be included in the scope of protection of the present invention.

Claims (8)

1, a kind of light-emitting diode with current transfer penetration-enhanced window layer structure, include from top to bottom the top electrode of the storied length of longitudinal layer, current extending, upper limiting layer, active area, lower limit layer, resilient coating, substrate, bottom electrode successively, it is characterized in that, between top electrode and current extending, be provided with conductive euphotic zone, also comprise the current barrier layer that is arranged on below the current extending, and this current barrier layer is positioned at upper limiting layer the inside, by conductive euphotic zone, current extending and current barrier layer in conjunction with forming the current transfer penetration-enhanced window layer.
2, a kind of light-emitting diode with current transfer penetration-enhanced window layer structure according to claim 1 is characterized in that, introduces DBR reflector layer structure between lower limit layer and resilient coating.
3, a kind of light-emitting diode according to claim 1 and 2 with current transfer penetration-enhanced window layer structure, it is characterized in that, top electrode is a p-type top electrode, current extending is a p-type current extending, upper limiting layer is a p-type upper limiting layer, lower limit layer is a n-type lower limit layer, resilient coating is a n-type resilient coating, substrate is a n-type substrate, bottom electrode is a n-type bottom electrode, conductive euphotic zone is a p-type conductive euphotic zone, by p-type conductive euphotic zone, p-type current extending and current barrier layer in conjunction with forming the current transfer penetration-enhanced window layer.
4, a kind of light-emitting diode with current transfer penetration-enhanced window layer structure according to claim 1 is characterized in that, can introduce the structure that luminous energy is played anti-reflection effect again on the current transfer penetration-enhanced window layer.
5, a kind of light-emitting diode with current transfer penetration-enhanced window layer structure according to claim 1 is characterized in that, the used material of conductive euphotic zone be can conduct electricity, material that printing opacity can play anti-reflection effect again to light.
6, a kind of light-emitting diode with current transfer penetration-enhanced window layer structure according to claim 1 is characterized in that, the material of current barrier layer is the material of insulating material or conduction type and conductive euphotic zone conductivity type opposite.
7, a kind of light-emitting diode according to claim 1 with current transfer penetration-enhanced window layer structure, it is characterized in that, the structure of active area is a p-n junction, or the p-i-n knot, or double-heterostructure, or single quantum, or multi-quantum pit structure, or superlattice structure, or the quantum dot light emitting structure, or multiple layer hetero quantum point structure, or above-mentioned various combination in any structure.
8, a kind of light-emitting diode with current transfer penetration-enhanced window layer structure according to claim 1 is characterized in that, substrate is the material to visible absorption of forward LED, or the translate substrate material of flip-chip bonded structure.
CNB200610169829XA 2006-12-29 2006-12-29 LED with the current transfer penetration-enhanced window layer structure Expired - Fee Related CN100438110C (en)

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PCT/CN2007/003953 WO2008083562A1 (en) 2006-12-29 2007-12-29 A kind of light emitting diodes with the window layer structure of current spreading and light anti-reflecting

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