CN100449644C - 多状态存储单元和存储器设备及形成存储单元的方法 - Google Patents
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Abstract
可编程多数据状态存储单元包括由第一导电材料形成的第一电极层、由第二导电材料形成的第二电极层、以及置于该第一和第二电极层之间的第一层金属掺杂硫族化物材料。该第一层提供一种媒质,其中可以形成导电生长以便将第一和第二电极层电耦合在一起。该存储单元还包括由第三导电材料形成的第三电极层,以及置于该第二和第三电极层之间的第二层金属掺杂硫族化物材料,该第二层提供一种媒质,其中可以形成导电生长以便将第二和第三电极层电耦合在一起。
Description
技术领域
本发明涉及随机存取存储器(“RAM”),并尤其涉及能够以多数据状态存储数据的RAM的存储单元。
背景技术
随机存取存储器设备是任何计算环境的主要部分。没有这些存储设备,在计算装置中处理数据几乎不可能。因此,已经针对随机存取计算机存储器领域进行了大量的研究和开发。这些研究和开发是针对与计算机存储器有关的不同领域,例如,加快存取存储设备所存储的数据的速度,设计功耗更低的存储器,以及设计具有更大数据保持时间的存储设备。此外,已经对其花费了大量努力的一个特定的领域是,增加存储密度和数据容量。
增加存储密度的一个传统方法是减小存储设备的尺寸,更特别地,减小存储单元的尺寸。因此,最近以来存储单元的尺寸已经大大减小了。然而,存储单元的尺寸已经减小到当制造具有这些特征尺寸的存储器设备时,当前的工艺技术正在持续地受到挑战的程度。作为另一种解决存储密度和数据容量的问题方法,已经采用能够以比传统的二进制存储器更多的状态存储数据的存储器设备进行了实验。即,传统存储器以二进制格式存储数据,其中数据存储为两个不同数据状态中的任意一个。使用多数据状态存储器,数据可以存储为多个不同状态中的一个,其中不同状态的数量大于二。因此使用多数据状态存储器,通常需要更少的存储单元用来存储数据。例如,具有四种不同数据状态的存储单元可以代替两个仅具有两个不同数据状态的传统存储单元。因此,存储相同量的数据将只需要一半的存储单元。相反,如果该多数据状态存储器的尺寸与传统存储单元相同,则相同的区域中可以存储两倍的数据。
在Ovshinsky等的几个美国专利中提供了在多数据状态存储器领域中所作的工作的例子。例如,在Ovshinsky等的美国专利No.5,296,716中,描述了将电可写和可擦除相变材料用于电子存储器的应用。此外,在Ovshinsky等的美国专利No.5,912,839中,描述了对Ovonic存储器多状态数字多位存储器元件进行编程以及在数据存储中应用的方法。如其中所描述,包括相变材料的存储器元件可以通过使用多个电流脉冲编程,所述相变材料是能够在通常的非晶和通常的晶体之间电转换的材料。在确定存储元件的数据状态时,可以通过计数使存储器元件的电阻水平回到第一状态所需要的脉冲数量来识别脉冲的数量。脉冲的数量代表存储器元件存储的数据的数据状态。如在前述的专利中进一步描述的,读存储器元件的当前状态的过程是破坏性的,因此需要在读之后对该数据重新编程。
在Kozicki等的美国专利中描述了设计多数据状态存储器时采用的另一种方法。如其中所述,由位于两个电极之间的快离子导体形成的可编程金属化单元(PMC),所述快离子导体是例如硫族化物材料,其包括含有硫、硒和碲的化合物。可以通过在两个电极之间施加电压差产生非挥发性金属树枝状晶体。非挥发性树枝状晶体的质量改变PMC的电阻,这可以被用作以多种状态存储数据的手段。在前述的专利中还描述了在不同应用中PMC的各种结构性实例。
虽然多数据状态和可变电阻存储器领域已经有了发展,但是可以理解,在该领域中新的和可替换的方法仍然是可能的。例如,在具有数据状态的真正量化的多数据状态存储单元领域中的进一步发展。因此,需要可替换的方法用来以多数据状态存储数据。
发明内容
本发明涉及多数据状态存储单元。该存储单元包括由第一导电材料形成的第一电极层、由第二导电材料形成的第二电极层、以及置于第一和第二电极层之间的第一层金属掺杂硫族化物材料,该第一层提供一种媒质,其中可以形成导电生长以便将第一和第二电极层电耦合在一起。该存储单元还包括由第三导电材料形成的第三电极层,以及置于该第二和第三电极层之间的第二层金属掺杂硫族化物材料,该第二层提供一种媒质,其中可以形成导电生长以便将第二和第三电极层电耦合在一起。
附图说明
图1是本发明的一个实施例的截面视图。
图2a-c是说明图1中实施例的操作的截面视图。
图3是本发明的另一实施例的截面视图。
图4是包括一个或多个本发明的存储器阵列的典型存储器设备的示意框图。
如同在集成电路领域的传统表示法一样,各个层的横向尺寸和厚度未按比例画出,并且可能被放大或缩小以便提高视图的易读性。
具体实施方式
本发明的实施例提供了多状态存储单元。下面进行特定的详细说明以提供对本发明的充分的理解。然而,本发明可以不使用这些特定的细节来实践,这对于本领域的技术人员是很清楚的。在其它方面,为了避免不必要地混淆本发明,未详细示出公知的制造技术、工艺方法、电路、控制信号和时序协议。
图1所示的是根据本发明一个实施例的多状态存储单元200的一部分的截面视图。形成金属电极层202以提供向其施加电压的阴极层。可以理解,金属层202可以在衬底上形成,或者在支撑多状态存储单元200的一层材料上形成。在金属层202上形成的是金属掺杂硫族化物层204,穿过其形成了在施加电压时到达浮置电极层206的导电链接,这将在下面做更详细的解释。此处所指的硫族化物材料包括那些硫、硒和碲的化合物。掺杂硫族化物的金属材料通常是I族或II族金属,例如银、铜、锌及其组合物。浮置电极层206通常由诸如银的金属材料形成。
在浮置电极层206上形成的是另一金属掺杂硫族化物层208。层208的材料成份可以但并不必须与层204的相同。如图2所示,层208的厚度t2大于层204的厚度t1。然而,在本发明的其它实施例中,厚度t2和t1可以接近或近似相同,或者厚度t2可以小于t1。如下面的详细描述,为了适应具有各种厚度的层206和208,各个金属掺杂硫族化物层206和208的成份可能需要改变。在金属掺杂硫族化物层208上形成的是另一金属电极层210,该层代表多状态存储单元200的阳极。通常,金属电极层210和浮置电极层206由相同的材料形成。如图1所说明的,阴极形成在阳极下方,然而,可以理解,不脱离本发明的范围,这两层的排列可以颠倒。此外,图1中的垂直取向可以改变,使得各层沿水平方向形成于横向彼此间隔的阴极和阳极之间。
可以理解,本领域的普通技术人员公知的很多材料都可用于金属掺杂硫族化物层。例如,可以使用硒化锗的组成物,即GexSey。示例性比例为Ge20Se80~GeSe的范围。硫化砷、碲化锗和硫化锗的组成物也可以用于金属掺杂硫族化物层。类似地,可以用于电极层的材料也是已知的,例如银、硒化银组成物、铜、硒化锗等。可以理解不脱离本发明的范围,与公知材料特性相同的最新开发的材料也可以用于金属掺杂硫族化物和电极层。
在操作中,通过以相对数字的方式改变或编程阳极和阴极之间的总电阻,图1所示的多状态存储单元200能够存储多个状态。然后存储单元200的电阻可以被测量或被比较,以确定由存储单元200存储的数据的值。作为电阻可以以相对离散的方式改变的结果,通过存储单元200可以存储多个状态。
电阻改变是通过形成从金属电极层202(即阴极)穿过层204而与浮置电极层206电接触的导电生长(conductive growth),以及形成从浮置电极206穿过层208而与金属电极层210(即阳极)电接触的导电生长来完成的。导电生长的形成是通过在阴极和阳极之间制造电压差实现的,例如通过向阳极施加电压而使阴极接地。
每次导电生长产生短路时,阳极和阴极之间的电阻变化相对显著。最初,如图2a所示,其中没有形成导电生长,阳极和阴极之间的电阻Rcell近似等于R1+R2,其中R1是层204的电阻,R2是层208的电阻。然而,在跨越金属掺杂硫族化物层202、210上施加的偏压的影响下,导电生长304和308开始分别穿过层204和208形成。当导电生长延伸穿过层208,并且在浮置电极层206和以层210代表的阳极之间产生短路时,如图2b,阳极和阴极之间的电阻Rcell变成小于R1但大于短路的值。此时的电阻Rcell是可重复的,因此,可以用来代表一种数据状态。当导电生长304延伸穿过层204,并在以层202代表的阴极和浮置电极层206之间产生短路时,电阻Rcell再次改变到相对低的电阻,如图2c所示。
由存储单元200提供的Rcell的每个不同电阻状态代表了不同的数据或逻辑状态。即,第一数据状态由近似等于总电阻(R1+R2)的Rcell表示,第二数据状态由值在R1和低电阻之间的Rcell表示,这在通过导电生长308使浮置电极层206到金属电极层210短路时发生,以及第三数据状态由低电阻表示,在通过导电生长304使金属电极层202到浮置电极层206短路之后。耦合到存储单元200的读电路测量存储单元200的电阻,以确定由该单元存储的数据。
导电生长304和308的生长依赖于施加到存储单元200的电场的取向。即,如迄今为止所讨论的,施加到金属电极层210(即阳极)的电压相对于施加到金属电极层202(即阴极)的电压是正的,因此,生长方向是从金属电极层202到浮置电极层206。类似地,导电生长将从浮置电极层206延伸至金属电极层210形成。然而,可以理解,以相反极性施加电压将会减少无论哪一种先前形成的导电生长。因此,通过在读或写操作期间改变施加到存储单元200的电压极性,以改变存储单元200的电阻,存储单元200可以被编程以存储不同的数据状态。
可以进一步理解,与本发明的实施例一起使用的读和写电路对于本领域的普通技术人员是公知的,并且可以使用传统的电路和设计实现。还可以进一步理解,此处的描述足以使本领域的普通技术人员能够实践本发明。
如图2b所示,向阳极施加电压不仅引起导电生长304的形成,也引起导电生长308的形成。然而,由于层208的厚度大于层204的的厚度,对于给定的跨越多状态存储单元200施加的电压,跨越层208的电压大于跨越层204的电压。因此,在阴极到浮置电极206短路之前,浮置电极206到阳极短路。通过持续向阳极施加电压,导电生长304最终在阴极和浮置电极206之间产生短路,因此将阳极和阴极之间的电阻减小至低电阻。此外,可以理解,在导电生长308使浮置电极206到阳极210短路之后,跨越阳极和阴极的电阻Rcell在R1和短路之间,这是因为随着导电生长304向浮置电极206生长,层204的电阻实际是减小的。然而,此时的电阻Rcell仍然是可重复的,并且足以不同于短路状态,以致多状态存储单元的传统读电路能够始终一致地识别该数据状态。
可以进一步理解,可以通过改变层204和/或208的厚度调整电阻的范围,或者从一个电阻相对于另一个的转变。此外,如前所述,层204和208的金属掺杂硫族化物材料的成份也可以被调整,以调节电阻中的转变点。
图3中示出的是根据本发明的实施例的存储单元400的一部分。存储单元400包括与存储单元200(图1)的层相似的层。然而,除了关于存储单元200所描述的层外,存储单元400还包括第二浮置电极420和第三金属掺杂硫族化物层424。第二浮置电极420和第三金属掺杂硫族化物层424的增加使得存储单元400能够具有在其中存储数据的附加存储状态。即,存储单元200提供三种不同的状态或电阻Rcell:(R2+R1)、R1与低电阻之间、以及低电阻,而存储单元400提供四种不同的状态或Rcell的电阻:(R3+R2+R1)、(R2+R1)与R1之间、R1和低电阻之间、以及低电阻。如前所讨论的,每个不同的电阻水平可以用于代表一种不同的数据状态。
如前讨论所说明的,可以理解,包含由金属掺杂硫族化物材料和浮置电极形成的附加层可以用来制作具有比存储单元400所提供的状态甚至更多状态的存储单元。
图4示出了包括存储器阵列502的存储器设备500,其中存储器阵列502具有根据本发明的实施例的存储单元。存储器设备500包括命令译码器506,该命令译码器506通过命令总线508接收存储命令并产生相应的控制信号。行或列地址通过地址总线520施加到存储器设备500,并分别通过行地址解码器524或列地址解码器528解码。存储器阵列读/写电路530耦合到阵列520,以便通过输入-输出数据总线540向数据输出缓冲器534提供读数据。通过数据输入缓冲器544和存储器阵列读/写电路530向存储器阵列施加写数据。
从前述内容可以理解,尽管这里为了说明目的描述了本发明的具体实施例,但是在不脱离本发明的主旨和范围的前提下,可以进行各种修改。因此,本发明仅由附属的权利要求所限定。
Claims (39)
1.多状态存储单元,包括:
由第一导电材料形成的第一电极层;
由第二导电材料形成浮置电极层的第二电极层;
置于第一和第二电极层之间的第一层金属掺杂硫族化物材料,该第一层提供一种媒质,其中能够形成导电生长以便将第一和第二电极层电耦合在一起;
由第三导电材料形成的第三电极层;以及
置于第二和第三电极层之间的第二层金属掺杂硫族化物材料,该第二层提供一种媒质,其中能够形成导电生长以便将第二和第三电极层电耦合在一起;
其中,所述导电生长的形成是通过在第一电极和第三电极之间制造电压差实现的。
2.权利要求1的存储单元,其中第一导电材料包括银材料的组成物。
3.权利要求1的存储单元,其中第一或第二层金属掺杂硫族化物材料中的至少一层是从包括硒化锗、硫化砷、碲化锗和硫化锗的组中选出的材料。
4.权利要求1的存储单元,其中第一或第二层金属掺杂硫族化物材料中的至少一层的材料包含硒化锗的组成物。
5.权利要求1的存储单元,其中第一、第二和第三电极的导电材料相同。
6.权利要求1的存储单元,其中第一层金属掺杂硫族化物材料的厚度小于第二层金属掺杂硫族化物材料的厚度。
7.权利要求1的存储单元,其中第二层金属掺杂硫族化物材料的厚度小于第一层金属掺杂硫族化物材料的厚度。
8.权利要求1的存储单元,还包括:
由第四导电材料形成的第四电极;以及
置于第三和第四电极层之间的第三层金属掺杂硫族化物材料,该第三层提供一种媒质,其中能够形成导电生长以便将第三和第四电极层电耦合在一起;
9.权利要求1的存储单元,其中第一和第二层的金属掺杂硫族化物材料是相同的。
10.权利要求1的存储单元,其中第一和第二层的金属掺杂硫族化物材料包括银玻璃材料。
11.多状态存储单元,包括:
由第一导电材料形成的第一电极层;
由第二导电材料形成浮置电极层的第二电极层;
置于第一和第二电极层之间并邻接二者的第一层金属掺杂硫族化物材料,该第一层提供一种媒质,其中能够形成导电生长以便将第一和第二电极层电耦合在一起;
由第三导电材料形成的第三电极层;
置于第二和第三电极层之间并邻接二者的第二层金属掺杂硫族化物材料,该第二层提供一种媒质,其中能够形成导电生长以便将第二和第三电极层电耦合在一起;
由第四导电材料形成的第四电极层;以及
置于第三和第四电极层之间并邻接二者的第三层金属掺杂硫族化物材料,该第三层提供一种媒质,其中能够形成导电生长以便将第三和第四电极层电耦合在一起;
其中,所述导电生长的形成是通过在第一电极和第三电极之间制造电压差实现的。
12.权利要求11的存储单元,其中第一、第二、第三和第四电极层中的至少一层包括银材料的组成物。
13.权利要求11的存储单元,其中第一、第二、第三和第四导电材料是相同的。
14.权利要求11的存储单元,其中第一层金属掺杂硫族化物材料的厚度小于第二层金属掺杂硫族化物材料的厚度,并且第二层金属掺杂硫族化物材料的厚度小于第三层金属掺杂硫族化物材料的厚度。
15.权利要求11的存储单元,其中第一、第二和第三层的金属掺杂硫族化物材料是相同的。
16.权利要求11的存储单元,其中第一、第二或第三层中的至少一层的金属掺杂硫族化物材料包括从由硒化锗、硫化砷、碲化锗和硫化锗组成的组中选出的材料。
17.权利要求11的存储单元,其中第一、第二或第三层中的至少一层的金属掺杂硫族化物材料包括硒化锗的组成物。
18.权利要求11的存储单元,其中第一电极位于第二电极下方,第二电极位于第三电极下方,且第三电极位于第四电极下方。
19.权利要求11的存储单元,其中在施加编程电压下,在第二导电生长将第二电极耦合到第三电极之前,第一导电生长将第三电极耦合到第一电极。
20.一种存储器设备,包括:
包括以行和列排列的多个存储单元的存储器阵列,每个存储单元包括:
由第一导电材料形成的并耦合到各行的第一电极层;
由第二导电材料形成浮置电极层的第二电极层;
置于第一和第二电极层之间并邻接二者的第一层金属掺杂硫族化物材料,该第一层提供一种媒质,其中能够形成导电生长以便将第一和第二电极层电耦合在一起;
由第三导电材料形成的并耦合到各列的第三电极层;以及
置于第二和第三电极层之间并邻接二者的第二层金属掺杂硫族化物材料,该第二层提供一种媒质,其中能够形成导电生长以便将第二和第三电极层电耦合在一起;
用于选择对应于行地址的一行存储单元的行地址解码器;
用于选择对应于列地址的一列存储单元的列地址解码器;
耦合到存储器阵列的读和写电路,用来从由行和列地址解码器选择的存储单元中读数据和向其中写数据;
耦合在读和写电路与存储设备的外部数据端之间的数据通路;以及
命令译码器,能够响应于施加到存储器设备的存储命令而产生控制信号;
其中,所述导电生长的形成是通过在第一电极和第三电极之间制造电压差实现的。
21.权利要求20的存储器设备,其中每个存储单元的第一导电层由银材料的组成物形成。
22.权利要求20的存储器设备,其中第一、第二和第三电极的导电材料是相同的。
23.权利要求20的存储器设备,其中第一层金属掺杂硫族化物材料的厚度小于第二层金属掺杂硫族化物材料的厚度。
24.权利要求20的存储器设备,其中每个存储单元还包括:
由第四导电材料形成的第四电极;以及
置于第三和第四电极层之间的第三层金属掺杂硫族化物材料,该第三层提供一种媒质,其中能够形成导电生长以便将第三和第四电极电耦合在一起。
25.权利要求20的存储器设备,其中第一和第二层的金属掺杂硫族化物材料是相同的。
26.权利要求20的存储器设备,其中第一和第二层的金属掺杂硫族化物材料包括银玻璃材料。
27.权利要求20的存储器设备,其中第一或第二层中的至少一层金属掺杂硫族化物材料包括从由硒化锗、硫化砷、碲化锗和硫化锗组成的组中选出的材料。
28.权利要求20的存储器设备,其中第一或第二层中的至少一层金属掺杂硫族化物材料包括硒化锗的组成物。
29.用于形成多状态存储单元的方法,包括:
由第一导电材料形成第一电极层;
在第一电极层上由金属掺杂硫族化物材料形成第一层;
在第一层上由第二导电材料形成浮置电极层的第二电极层;
在第二电极层上由金属掺杂硫族化物材料形成第二层;
在第二层上由第三导电材料形成第三电极层,
该第一层提供一种媒质,其中能够形成导电生长以便将第一和第二电极层电耦合在一起,且该第二层提供一种媒质,其中能够形成导电生长以便将第二和第三电极层电耦合在一起;
其中,所述导电生长的形成是通过在第一电极和第三电极之间制造电压差实现的。
30.权利要求29的方法,其中形成第一电极层包括由银材料的组成物形成第一电极层。
31.权利要求29的方法,其中形成第一和第二电极层包括由相同类型的材料形成第一和第二电极。
32.权利要求29的方法,其中形成第一层和形成第二层包括形成具有厚度小于第二层的厚度的第一层。
33.权利要求29的方法,其中形成第一层和形成第二层包括形成具有厚度大于第二层的厚度的第一层。
34.权利要求29的方法,还包括:
在第三电极层上形成第三层金属掺杂硫族化物材料;以及
在第三层上形成由第四导电材料形成的第四电极,该第三层提供一种媒质,其中能够形成导电生长以便将第三和第四电极层电耦合在一起。
35.权利要求29的方法,其中第一和第二层的金属掺杂硫族化物材料是相同的。
36.权利要求29的方法,其中第一或第二层中的至少一层的金属掺杂硫族化物材料包括从由硒化锗、硫化砷、碲化锗和硫化锗组成的组中选出的材料。
37.权利要求29的方法,其中第一或第二层中的至少一层的金属掺杂硫族化物材料包括硒化锗的组成物。
38.权利要求29的方法,其中第一电极在第一层下方形成,第一层在第二电极下方形成,第二电极在第二层下方形成,且第二层在第三电极下方形成。
39.权利要求29的方法,其中第一电极邻接第一层形成,第一层邻接第二电极形成,第二电极邻接第二层形成,且第二层邻接第三电极层形成。
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Families Citing this family (56)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6864521B2 (en) * | 2002-08-29 | 2005-03-08 | Micron Technology, Inc. | Method to control silver concentration in a resistance variable memory element |
US7227170B2 (en) * | 2003-03-10 | 2007-06-05 | Energy Conversion Devices, Inc. | Multiple bit chalcogenide storage device |
US7471552B2 (en) * | 2003-08-04 | 2008-12-30 | Ovonyx, Inc. | Analog phase change memory |
US7381611B2 (en) * | 2003-08-04 | 2008-06-03 | Intel Corporation | Multilayered phase change memory |
US7529123B2 (en) * | 2003-09-08 | 2009-05-05 | Ovonyx, Inc. | Method of operating a multi-terminal electronic device |
JP4608875B2 (ja) * | 2003-12-03 | 2011-01-12 | ソニー株式会社 | 記憶装置 |
US7326950B2 (en) | 2004-07-19 | 2008-02-05 | Micron Technology, Inc. | Memory device with switching glass layer |
WO2006132813A1 (en) * | 2004-07-19 | 2006-12-14 | Micron Technology, Inc. | Memory device with switching glass layer |
US7190048B2 (en) | 2004-07-19 | 2007-03-13 | Micron Technology, Inc. | Resistance variable memory device and method of fabrication |
US20060045974A1 (en) * | 2004-08-25 | 2006-03-02 | Campbell Kristy A | Wet chemical method to form silver-rich silver-selenide |
EP1643508B1 (en) * | 2004-10-01 | 2013-05-22 | International Business Machines Corporation | Non-volatile memory element with programmable resistance |
TWI254443B (en) * | 2004-10-08 | 2006-05-01 | Ind Tech Res Inst | Multilevel phase-change memory, manufacture method and status transferring method thereof |
JP2006108645A (ja) * | 2004-10-08 | 2006-04-20 | Ind Technol Res Inst | マルチレベル相変化メモリ、及びその動作方法並びに製造方法 |
DE102004052645A1 (de) * | 2004-10-29 | 2006-05-04 | Infineon Technologies Ag | Speicherzelle und Verfahren zu deren Herstellung |
US7138290B2 (en) * | 2004-12-03 | 2006-11-21 | Micron Technology, Inc. | Methods of depositing silver onto a metal selenide-comprising surface and methods of depositing silver onto a selenium-comprising surface |
US8193606B2 (en) * | 2005-02-28 | 2012-06-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including a memory element |
KR100657956B1 (ko) * | 2005-04-06 | 2006-12-14 | 삼성전자주식회사 | 다치 저항체 메모리 소자와 그 제조 및 동작 방법 |
US7427770B2 (en) * | 2005-04-22 | 2008-09-23 | Micron Technology, Inc. | Memory array for increased bit density |
US20070009821A1 (en) * | 2005-07-08 | 2007-01-11 | Charlotte Cutler | Devices containing multi-bit data |
US20080042119A1 (en) * | 2005-08-09 | 2008-02-21 | Ovonyx, Inc. | Multi-layered chalcogenide and related devices having enhanced operational characteristics |
US7723712B2 (en) * | 2006-03-17 | 2010-05-25 | Micron Technology, Inc. | Reduced power consumption phase change memory and methods for forming the same |
US20080037324A1 (en) * | 2006-08-14 | 2008-02-14 | Geoffrey Wen-Tai Shuy | Electrical thin film memory |
US7560723B2 (en) | 2006-08-29 | 2009-07-14 | Micron Technology, Inc. | Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication |
US7479671B2 (en) * | 2006-08-29 | 2009-01-20 | International Business Machines Corporation | Thin film phase change memory cell formed on silicon-on-insulator substrate |
US7705707B2 (en) * | 2006-12-21 | 2010-04-27 | Motorola, Inc. | Bistable microelectronic switch stack |
US20080152792A1 (en) * | 2006-12-21 | 2008-06-26 | Motorola, Inc. | Method of manufacturing a bistable microelectronic switch stack |
US20080165569A1 (en) * | 2007-01-04 | 2008-07-10 | Chieh-Fang Chen | Resistance Limited Phase Change Memory Material |
KR100810617B1 (ko) | 2007-02-09 | 2008-03-06 | 삼성전자주식회사 | 멀티 비트 상전이 메모리소자 및 그 제조방법 |
KR20080088776A (ko) * | 2007-03-30 | 2008-10-06 | 삼성전자주식회사 | 비휘발성 기억 장치의 스토리지 및 그 형성 방법 |
KR100941514B1 (ko) | 2007-04-06 | 2010-02-12 | 삼성전자주식회사 | 멀티 비트 상전이 메모리소자 및 그 제조방법 |
US7859883B2 (en) | 2007-05-14 | 2010-12-28 | Hong Kong Applied Science And Technology Research Institute Co. Ltd. | Recordable electrical memory |
DE102007032865A1 (de) * | 2007-07-13 | 2009-01-15 | Qimonda Ag | Integrierte Schaltung, Verfahren zum Betreiben einer integrierten Schaltung, Speicherzellenarray sowie Speichermodul |
KR101390340B1 (ko) * | 2007-09-11 | 2014-05-07 | 삼성전자주식회사 | 다중 레벨 메모리 장치 및 그 동작 방법 |
US20090135640A1 (en) * | 2007-11-28 | 2009-05-28 | International Business Machines Corporation | Electromigration-programmable semiconductor device with bidirectional resistance change |
US7977722B2 (en) * | 2008-05-20 | 2011-07-12 | Seagate Technology Llc | Non-volatile memory with programmable capacitance |
US7786463B2 (en) * | 2008-05-20 | 2010-08-31 | Seagate Technology Llc | Non-volatile multi-bit memory with programmable capacitance |
US8742387B2 (en) * | 2008-06-25 | 2014-06-03 | Qimonda Ag | Resistive memory devices with improved resistive changing elements |
US7825479B2 (en) | 2008-08-06 | 2010-11-02 | International Business Machines Corporation | Electrical antifuse having a multi-thickness dielectric layer |
US8487291B2 (en) * | 2009-01-30 | 2013-07-16 | Seagate Technology Llc | Programmable metallization memory cell with layered solid electrolyte structure |
US8331168B2 (en) | 2009-04-30 | 2012-12-11 | International Business Machines Corporation | Increased capacity heterogeneous storage elements |
US8134139B2 (en) * | 2010-01-25 | 2012-03-13 | Macronix International Co., Ltd. | Programmable metallization cell with ion buffer layer |
JP2011204744A (ja) * | 2010-03-24 | 2011-10-13 | Toshiba Corp | 半導体記憶装置 |
US8828788B2 (en) * | 2010-05-11 | 2014-09-09 | Micron Technology, Inc. | Forming electrodes for chalcogenide containing devices |
US8395927B2 (en) * | 2010-06-18 | 2013-03-12 | Sandisk 3D Llc | Memory cell with resistance-switching layers including breakdown layer |
US8724369B2 (en) | 2010-06-18 | 2014-05-13 | Sandisk 3D Llc | Composition of memory cell with resistance-switching layers |
US8520425B2 (en) | 2010-06-18 | 2013-08-27 | Sandisk 3D Llc | Resistive random access memory with low current operation |
JP5364739B2 (ja) * | 2011-02-18 | 2013-12-11 | 株式会社東芝 | 不揮発性抵抗変化素子 |
JP2012199336A (ja) * | 2011-03-18 | 2012-10-18 | Sony Corp | 記憶素子および記憶装置 |
JP5687978B2 (ja) * | 2011-09-14 | 2015-03-25 | ルネサスエレクトロニクス株式会社 | 抵抗変化型不揮発記憶装置、半導体装置及び抵抗変化型不揮発記憶装置の動作方法 |
CN102306705A (zh) | 2011-09-16 | 2012-01-04 | 北京大学 | 一种大容量多值阻变存储器 |
CN103078053A (zh) * | 2012-12-21 | 2013-05-01 | 北京大学 | 一种多值阻变存储器及其制备方法 |
US9416949B2 (en) * | 2013-01-25 | 2016-08-16 | Field Controls, Llc | Adjustable bracket assembly for an ultraviolet lamp |
US20160005965A1 (en) * | 2014-07-01 | 2016-01-07 | Micron Technology, Inc. | Memory cells having a first selecting chalcogenide material and a second selecting chalcogenide material and methods therof |
US9406881B1 (en) | 2015-04-24 | 2016-08-02 | Micron Technology, Inc. | Memory cells having a heater electrode formed between a first storage material and a second storage material and methods of forming the same |
US10008665B1 (en) * | 2016-12-27 | 2018-06-26 | Intel Corporation | Doping of selector and storage materials of a memory cell |
US11444125B2 (en) * | 2020-06-17 | 2022-09-13 | Globalfoundries Singapore Pte. Ltd. | Memory devices and methods of forming memory devices |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1999028914A2 (en) * | 1997-12-04 | 1999-06-10 | Axon Technologies Corporation | Programmable sub-surface aggregating metallization structure and method of making same |
US6034882A (en) * | 1998-11-16 | 2000-03-07 | Matrix Semiconductor, Inc. | Vertically stacked field programmable nonvolatile memory and method of fabrication |
US6084796A (en) * | 1996-05-30 | 2000-07-04 | Axon Technologies Corporation | Programmable metallization cell structure and method of making same |
CN1276905A (zh) * | 1997-08-15 | 2000-12-13 | 薄膜电子有限公司 | 一种铁电体数据处理器件 |
Family Cites Families (189)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US160551A (en) * | 1875-03-09 | Improvement in revolving fire-arfvls | ||
US47765A (en) * | 1865-05-16 | Improved metallic thill-holder | ||
US47773A (en) * | 1865-05-16 | Chakles k | ||
US32254A (en) * | 1861-05-07 | Improvement in methods of distillation | ||
US47772A (en) * | 1865-05-16 | Improvement in grain-separators | ||
US38301A (en) * | 1863-04-28 | Improved alloys of aluminum | ||
US190289A (en) * | 1877-05-01 | Improvement in sewing-machine shuttles | ||
US137869A (en) * | 1873-04-15 | Improvement in stilts | ||
US3271591A (en) | 1963-09-20 | 1966-09-06 | Energy Conversion Devices Inc | Symmetrical current controlling device |
US3622319A (en) | 1966-10-20 | 1971-11-23 | Western Electric Co | Nonreflecting photomasks and methods of making same |
US3868651A (en) | 1970-08-13 | 1975-02-25 | Energy Conversion Devices Inc | Method and apparatus for storing and reading data in a memory having catalytic material to initiate amorphous to crystalline change in memory structure |
US3743847A (en) | 1971-06-01 | 1973-07-03 | Motorola Inc | Amorphous silicon film as a uv filter |
US4267261A (en) | 1971-07-15 | 1981-05-12 | Energy Conversion Devices, Inc. | Method for full format imaging |
US3961314A (en) | 1974-03-05 | 1976-06-01 | Energy Conversion Devices, Inc. | Structure and method for producing an image |
US3966317A (en) | 1974-04-08 | 1976-06-29 | Energy Conversion Devices, Inc. | Dry process production of archival microform records from hard copy |
US4177474A (en) | 1977-05-18 | 1979-12-04 | Energy Conversion Devices, Inc. | High temperature amorphous semiconductor member and method of making the same |
US4269395A (en) * | 1978-07-23 | 1981-05-26 | Newman James L | Portable hydraulic rig for performing workover, drilling and other operations on a well |
JPS5565365A (en) | 1978-11-07 | 1980-05-16 | Nippon Telegr & Teleph Corp <Ntt> | Pattern forming method |
DE2901303C2 (de) | 1979-01-15 | 1984-04-19 | Max Planck Gesellschaft Zur Foerderung Der Wissenschaften E.V., 3400 Goettingen | Festes Ionenleitermaterial, seine Verwendung und Verfahren zu dessen Herstellung |
US4312938A (en) | 1979-07-06 | 1982-01-26 | Drexler Technology Corporation | Method for making a broadband reflective laser recording and data storage medium with absorptive underlayer |
US4269935A (en) | 1979-07-13 | 1981-05-26 | Ionomet Company, Inc. | Process of doping silver image in chalcogenide layer |
US4316946A (en) | 1979-12-03 | 1982-02-23 | Ionomet Company, Inc. | Surface sensitized chalcogenide product and process for making and using the same |
US4499557A (en) | 1980-10-28 | 1985-02-12 | Energy Conversion Devices, Inc. | Programmable cell for use in programmable electronic arrays |
US4405710A (en) | 1981-06-22 | 1983-09-20 | Cornell Research Foundation, Inc. | Ion beam exposure of (g-Gex -Se1-x) inorganic resists |
US4737379A (en) | 1982-09-24 | 1988-04-12 | Energy Conversion Devices, Inc. | Plasma deposited coatings, and low temperature plasma method of making same |
US4545111A (en) | 1983-01-18 | 1985-10-08 | Energy Conversion Devices, Inc. | Method for making, parallel preprogramming or field programming of electronic matrix arrays |
US4608296A (en) | 1983-12-06 | 1986-08-26 | Energy Conversion Devices, Inc. | Superconducting films and devices exhibiting AC to DC conversion |
US4795657A (en) | 1984-04-13 | 1989-01-03 | Energy Conversion Devices, Inc. | Method of fabricating a programmable array |
US4668968A (en) | 1984-05-14 | 1987-05-26 | Energy Conversion Devices, Inc. | Integrated circuit compatible thin film field effect transistor and method of making same |
US4769338A (en) | 1984-05-14 | 1988-09-06 | Energy Conversion Devices, Inc. | Thin film field effect transistor and method of making same |
US4843443A (en) | 1984-05-14 | 1989-06-27 | Energy Conversion Devices, Inc. | Thin film field effect transistor and method of making same |
US4673957A (en) | 1984-05-14 | 1987-06-16 | Energy Conversion Devices, Inc. | Integrated circuit compatible thin film field effect transistor and method of making same |
US4670763A (en) | 1984-05-14 | 1987-06-02 | Energy Conversion Devices, Inc. | Thin film field effect transistor |
US4678679A (en) | 1984-06-25 | 1987-07-07 | Energy Conversion Devices, Inc. | Continuous deposition of activated process gases |
US4646266A (en) | 1984-09-28 | 1987-02-24 | Energy Conversion Devices, Inc. | Programmable semiconductor structures and methods for using the same |
US4664939A (en) | 1985-04-01 | 1987-05-12 | Energy Conversion Devices, Inc. | Vertical semiconductor processor |
US4637895A (en) | 1985-04-01 | 1987-01-20 | Energy Conversion Devices, Inc. | Gas mixtures for the vapor deposition of semiconductor material |
US4710899A (en) | 1985-06-10 | 1987-12-01 | Energy Conversion Devices, Inc. | Data storage medium incorporating a transition metal for increased switching speed |
US4671618A (en) | 1986-05-22 | 1987-06-09 | Wu Bao Gang | Liquid crystalline-plastic material having submillisecond switch times and extended memory |
US4766471A (en) | 1986-01-23 | 1988-08-23 | Energy Conversion Devices, Inc. | Thin film electro-optical devices |
US4818717A (en) | 1986-06-27 | 1989-04-04 | Energy Conversion Devices, Inc. | Method for making electronic matrix arrays |
US4728406A (en) | 1986-08-18 | 1988-03-01 | Energy Conversion Devices, Inc. | Method for plasma - coating a semiconductor body |
US4845533A (en) | 1986-08-22 | 1989-07-04 | Energy Conversion Devices, Inc. | Thin film electrical devices with amorphous carbon electrodes and method of making same |
US4809044A (en) | 1986-08-22 | 1989-02-28 | Energy Conversion Devices, Inc. | Thin film overvoltage protection devices |
US4853785A (en) | 1986-10-15 | 1989-08-01 | Energy Conversion Devices, Inc. | Electronic camera including electronic signal storage cartridge |
US4788594A (en) | 1986-10-15 | 1988-11-29 | Energy Conversion Devices, Inc. | Solid state electronic camera including thin film matrix of photosensors |
US4847674A (en) | 1987-03-10 | 1989-07-11 | Advanced Micro Devices, Inc. | High speed interconnect system with refractory non-dogbone contacts and an active electromigration suppression mechanism |
US4800526A (en) | 1987-05-08 | 1989-01-24 | Gaf Corporation | Memory element for information storage and retrieval system and associated process |
US4891330A (en) | 1987-07-27 | 1990-01-02 | Energy Conversion Devices, Inc. | Method of fabricating n-type and p-type microcrystalline semiconductor alloy material including band gap widening elements |
US4775425A (en) | 1987-07-27 | 1988-10-04 | Energy Conversion Devices, Inc. | P and n-type microcrystalline semiconductor alloy material including band gap widening elements, devices utilizing same |
US5272359A (en) | 1988-04-07 | 1993-12-21 | California Institute Of Technology | Reversible non-volatile switch based on a TCNQ charge transfer complex |
GB8910854D0 (en) | 1989-05-11 | 1989-06-28 | British Petroleum Co Plc | Semiconductor device |
US5159661A (en) | 1990-10-05 | 1992-10-27 | Energy Conversion Devices, Inc. | Vertically interconnected parallel distributed processor |
US5314772A (en) | 1990-10-09 | 1994-05-24 | Arizona Board Of Regents | High resolution, multi-layer resist for microlithography and method therefor |
JPH0770731B2 (ja) | 1990-11-22 | 1995-07-31 | 松下電器産業株式会社 | 電気可塑性素子 |
US5341328A (en) | 1991-01-18 | 1994-08-23 | Energy Conversion Devices, Inc. | Electrically erasable memory elements having reduced switching current requirements and increased write/erase cycle life |
US5414271A (en) | 1991-01-18 | 1995-05-09 | Energy Conversion Devices, Inc. | Electrically erasable memory elements having improved set resistance stability |
US5166758A (en) | 1991-01-18 | 1992-11-24 | Energy Conversion Devices, Inc. | Electrically erasable phase change memory |
US5536947A (en) | 1991-01-18 | 1996-07-16 | Energy Conversion Devices, Inc. | Electrically erasable, directly overwritable, multibit single cell memory element and arrays fabricated therefrom |
US5296716A (en) | 1991-01-18 | 1994-03-22 | Energy Conversion Devices, Inc. | Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom |
US5596522A (en) | 1991-01-18 | 1997-01-21 | Energy Conversion Devices, Inc. | Homogeneous compositions of microcrystalline semiconductor material, semiconductor devices and directly overwritable memory elements fabricated therefrom, and arrays fabricated from the memory elements |
US5534711A (en) | 1991-01-18 | 1996-07-09 | Energy Conversion Devices, Inc. | Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom |
US5534712A (en) | 1991-01-18 | 1996-07-09 | Energy Conversion Devices, Inc. | Electrically erasable memory elements characterized by reduced current and improved thermal stability |
US5335219A (en) | 1991-01-18 | 1994-08-02 | Ovshinsky Stanford R | Homogeneous composition of microcrystalline semiconductor material, semiconductor devices and directly overwritable memory elements fabricated therefrom, and arrays fabricated from the memory elements |
US5406509A (en) | 1991-01-18 | 1995-04-11 | Energy Conversion Devices, Inc. | Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom |
US5128099A (en) | 1991-02-15 | 1992-07-07 | Energy Conversion Devices, Inc. | Congruent state changeable optical memory material and device |
US5219788A (en) | 1991-02-25 | 1993-06-15 | Ibm Corporation | Bilayer metallization cap for photolithography |
US5177567A (en) | 1991-07-19 | 1993-01-05 | Energy Conversion Devices, Inc. | Thin-film structure for chalcogenide electrical switching devices and process therefor |
US5359205A (en) | 1991-11-07 | 1994-10-25 | Energy Conversion Devices, Inc. | Electrically erasable memory elements characterized by reduced current and improved thermal stability |
US5238862A (en) | 1992-03-18 | 1993-08-24 | Micron Technology, Inc. | Method of forming a stacked capacitor with striated electrode |
US5512328A (en) | 1992-08-07 | 1996-04-30 | Hitachi, Ltd. | Method for forming a pattern and forming a thin film used in pattern formation |
US5350484A (en) | 1992-09-08 | 1994-09-27 | Intel Corporation | Method for the anisotropic etching of metal films in the fabrication of interconnects |
EP0617312B1 (en) * | 1993-03-26 | 2002-10-02 | Matsushita Electric Industrial Co., Ltd. | A spatial light modulator and a method for driving the same |
US5818749A (en) | 1993-08-20 | 1998-10-06 | Micron Technology, Inc. | Integrated circuit memory device |
BE1007902A3 (nl) | 1993-12-23 | 1995-11-14 | Philips Electronics Nv | Schakelelement met geheugen voorzien van schottky tunnelbarriere. |
DE4408330A1 (de) | 1994-03-11 | 1995-09-14 | Cherry Mikroschalter Gmbh | Ergonomische Tastatur |
US5500532A (en) | 1994-08-18 | 1996-03-19 | Arizona Board Of Regents | Personal electronic dosimeter |
JP2643870B2 (ja) | 1994-11-29 | 1997-08-20 | 日本電気株式会社 | 半導体記憶装置の製造方法 |
US5543737A (en) | 1995-02-10 | 1996-08-06 | Energy Conversion Devices, Inc. | Logical operation circuit employing two-terminal chalcogenide switches |
US5751012A (en) | 1995-06-07 | 1998-05-12 | Micron Technology, Inc. | Polysilicon pillar diode for use in a non-volatile memory cell |
DE69614545T2 (de) | 1995-06-07 | 2002-05-23 | Micron Technology Inc | Gestapelte vergrabene diode zur verwendung mit einem mehrzustand-material in einer nichtflüchtigen speicherzelle |
US6420725B1 (en) | 1995-06-07 | 2002-07-16 | Micron Technology, Inc. | Method and apparatus for forming an integrated circuit electrode having a reduced contact area |
US5869843A (en) | 1995-06-07 | 1999-02-09 | Micron Technology, Inc. | Memory array having a multi-state element and method for forming such array or cells thereof |
US5879955A (en) | 1995-06-07 | 1999-03-09 | Micron Technology, Inc. | Method for fabricating an array of ultra-small pores for chalcogenide memory cells |
US5789758A (en) | 1995-06-07 | 1998-08-04 | Micron Technology, Inc. | Chalcogenide memory cell with a plurality of chalcogenide electrodes |
US5714768A (en) | 1995-10-24 | 1998-02-03 | Energy Conversion Devices, Inc. | Second-layer phase change memory array on top of a logic device |
US5694054A (en) | 1995-11-28 | 1997-12-02 | Energy Conversion Devices, Inc. | Integrated drivers for flat panel displays employing chalcogenide logic elements |
US5591501A (en) | 1995-12-20 | 1997-01-07 | Energy Conversion Devices, Inc. | Optical recording medium having a plurality of discrete phase change data recording points |
US6653733B1 (en) | 1996-02-23 | 2003-11-25 | Micron Technology, Inc. | Conductors in semiconductor devices |
US5687112A (en) | 1996-04-19 | 1997-11-11 | Energy Conversion Devices, Inc. | Multibit single cell memory element having tapered contact |
US5852870A (en) | 1996-04-24 | 1998-12-29 | Amkor Technology, Inc. | Method of making grid array assembly |
US5851882A (en) | 1996-05-06 | 1998-12-22 | Micron Technology, Inc. | ZPROM manufacture and design and methods for forming thin structures using spacers as an etching mask |
US5814527A (en) | 1996-07-22 | 1998-09-29 | Micron Technology, Inc. | Method of making small pores defined by a disposable internal spacer for use in chalcogenide memories |
US5789277A (en) | 1996-07-22 | 1998-08-04 | Micron Technology, Inc. | Method of making chalogenide memory device |
US5998244A (en) | 1996-08-22 | 1999-12-07 | Micron Technology, Inc. | Memory cell incorporating a chalcogenide element and method of making same |
US6147395A (en) | 1996-10-02 | 2000-11-14 | Micron Technology, Inc. | Method for fabricating a small area of contact between electrodes |
US5825046A (en) | 1996-10-28 | 1998-10-20 | Energy Conversion Devices, Inc. | Composite memory material comprising a mixture of phase-change memory material and dielectric material |
US6087674A (en) | 1996-10-28 | 2000-07-11 | Energy Conversion Devices, Inc. | Memory element with memory material comprising phase-change material and dielectric material |
US5846889A (en) | 1997-03-14 | 1998-12-08 | The United States Of America As Represented By The Secretary Of The Navy | Infrared transparent selenide glasses |
US5998066A (en) | 1997-05-16 | 1999-12-07 | Aerial Imaging Corporation | Gray scale mask and depth pattern transfer technique using inorganic chalcogenide glass |
US6031287A (en) * | 1997-06-18 | 2000-02-29 | Micron Technology, Inc. | Contact structure and memory element incorporating the same |
US5933365A (en) | 1997-06-19 | 1999-08-03 | Energy Conversion Devices, Inc. | Memory element with energy control mechanism |
US6005527A (en) | 1997-07-10 | 1999-12-21 | Andrew Corporation | RF coupler for concealed mobile telecommunications systems utilizing window-mounted antennas and systems using same |
US6051511A (en) | 1997-07-31 | 2000-04-18 | Micron Technology, Inc. | Method and apparatus for reducing isolation stress in integrated circuits |
GB9722149D0 (en) * | 1997-10-22 | 1997-12-17 | Philips Electronics Nv | Semiconductior memory devices |
US6011757A (en) | 1998-01-27 | 2000-01-04 | Ovshinsky; Stanford R. | Optical recording media having increased erasability |
US6141241A (en) | 1998-06-23 | 2000-10-31 | Energy Conversion Devices, Inc. | Universal memory element with systems employing same and apparatus and method for reading, writing and programming same |
US5912839A (en) | 1998-06-23 | 1999-06-15 | Energy Conversion Devices, Inc. | Universal memory element and method of programming same |
US6297170B1 (en) | 1998-06-23 | 2001-10-02 | Vlsi Technology, Inc. | Sacrificial multilayer anti-reflective coating for mos gate formation |
US6388324B2 (en) | 1998-08-31 | 2002-05-14 | Arizona Board Of Regents | Self-repairing interconnections for electrical circuits |
US6469364B1 (en) | 1998-08-31 | 2002-10-22 | Arizona Board Of Regents | Programmable interconnection system for electrical circuits |
US6825489B2 (en) | 2001-04-06 | 2004-11-30 | Axon Technologies Corporation | Microelectronic device, structure, and system, including a memory structure having a variable programmable property and method of forming the same |
US6635914B2 (en) | 2000-09-08 | 2003-10-21 | Axon Technologies Corp. | Microelectronic programmable device and methods of forming and programming the same |
US6487106B1 (en) | 1999-01-12 | 2002-11-26 | Arizona Board Of Regents | Programmable microelectronic devices and method of forming and programming same |
US6177338B1 (en) | 1999-02-08 | 2001-01-23 | Taiwan Semiconductor Manufacturing Company | Two step barrier process |
ATE361530T1 (de) * | 1999-02-11 | 2007-05-15 | Univ Arizona | Programmierbare mikroelektronische struktur sowie verfahren zu ihrer herstellung und programmierung |
US6072716A (en) | 1999-04-14 | 2000-06-06 | Massachusetts Institute Of Technology | Memory structures and methods of making same |
US6143604A (en) | 1999-06-04 | 2000-11-07 | Taiwan Semiconductor Manufacturing Company | Method for fabricating small-size two-step contacts for word-line strapping on dynamic random access memory (DRAM) |
US6350679B1 (en) | 1999-08-03 | 2002-02-26 | Micron Technology, Inc. | Methods of providing an interlevel dielectric layer intermediate different elevation conductive metal layers in the fabrication of integrated circuitry |
US20030107105A1 (en) | 1999-08-31 | 2003-06-12 | Kozicki Michael N. | Programmable chip-to-substrate interconnect structure and device and method of forming same |
US6423628B1 (en) | 1999-10-22 | 2002-07-23 | Lsi Logic Corporation | Method of forming integrated circuit structure having low dielectric constant material and having silicon oxynitride caps over closely spaced apart metal lines |
JP2001189431A (ja) * | 1999-12-28 | 2001-07-10 | Seiko Epson Corp | メモリのセル構造及びメモリデバイス |
US6914802B2 (en) | 2000-02-11 | 2005-07-05 | Axon Technologies Corporation | Microelectronic photonic structure and device and method of forming the same |
US6865117B2 (en) | 2000-02-11 | 2005-03-08 | Axon Technologies Corporation | Programming circuit for a programmable microelectronic device, system including the circuit, and method of forming the same |
US6501111B1 (en) | 2000-06-30 | 2002-12-31 | Intel Corporation | Three-dimensional (3D) programmable device |
WO2002021542A1 (en) * | 2000-09-08 | 2002-03-14 | Axon Technologies Corporation | Microelectronic programmable device and methods of forming and programming the same |
US6563164B2 (en) | 2000-09-29 | 2003-05-13 | Ovonyx, Inc. | Compositionally modified resistive electrode |
US6429064B1 (en) | 2000-09-29 | 2002-08-06 | Intel Corporation | Reduced contact area of sidewall conductor |
US6567293B1 (en) | 2000-09-29 | 2003-05-20 | Ovonyx, Inc. | Single level metal memory cell using chalcogenide cladding |
US6555860B2 (en) | 2000-09-29 | 2003-04-29 | Intel Corporation | Compositionally modified resistive electrode |
US6404665B1 (en) | 2000-09-29 | 2002-06-11 | Intel Corporation | Compositionally modified resistive electrode |
US6339544B1 (en) | 2000-09-29 | 2002-01-15 | Intel Corporation | Method to enhance performance of thermal resistor device |
US6653193B2 (en) * | 2000-12-08 | 2003-11-25 | Micron Technology, Inc. | Resistance variable device |
US6649928B2 (en) | 2000-12-13 | 2003-11-18 | Intel Corporation | Method to selectively remove one side of a conductive bottom electrode of a phase-change memory cell and structure obtained thereby |
US6696355B2 (en) | 2000-12-14 | 2004-02-24 | Ovonyx, Inc. | Method to selectively increase the top resistance of the lower programming electrode in a phase-change memory |
US6437383B1 (en) | 2000-12-21 | 2002-08-20 | Intel Corporation | Dual trench isolation for a phase-change memory cell and method of making same |
US6569705B2 (en) | 2000-12-21 | 2003-05-27 | Intel Corporation | Metal structure for a phase-change memory device |
US6646297B2 (en) | 2000-12-26 | 2003-11-11 | Ovonyx, Inc. | Lower electrode isolation in a double-wide trench |
US6534781B2 (en) | 2000-12-26 | 2003-03-18 | Ovonyx, Inc. | Phase-change memory bipolar array utilizing a single shallow trench isolation for creating an individual active area region for two memory array elements and one bipolar base contact |
US6531373B2 (en) | 2000-12-27 | 2003-03-11 | Ovonyx, Inc. | Method of forming a phase-change memory cell using silicon on insulator low electrode in charcogenide elements |
US6687427B2 (en) | 2000-12-29 | 2004-02-03 | Intel Corporation | Optic switch |
US6638820B2 (en) | 2001-02-08 | 2003-10-28 | Micron Technology, Inc. | Method of forming chalcogenide comprising devices, method of precluding diffusion of a metal into adjacent chalcogenide material, and chalcogenide comprising devices |
JP3884266B2 (ja) * | 2001-02-19 | 2007-02-21 | 株式会社東芝 | 半導体メモリ装置及びその製造方法 |
US6727192B2 (en) | 2001-03-01 | 2004-04-27 | Micron Technology, Inc. | Methods of metal doping a chalcogenide material |
US6348365B1 (en) | 2001-03-02 | 2002-02-19 | Micron Technology, Inc. | PCRAM cell manufacturing |
US6818481B2 (en) | 2001-03-07 | 2004-11-16 | Micron Technology, Inc. | Method to manufacture a buried electrode PCRAM cell |
US6734455B2 (en) * | 2001-03-15 | 2004-05-11 | Micron Technology, Inc. | Agglomeration elimination for metal sputter deposition of chalcogenides |
US6473332B1 (en) | 2001-04-04 | 2002-10-29 | The University Of Houston System | Electrically variable multi-state resistance computing |
WO2002082452A2 (en) * | 2001-04-06 | 2002-10-17 | Axon Technologies Corporation | Microelectronic device, structure, and system, including a memory structure having a variable programmable property and method of forming the same |
DE60220912T2 (de) | 2001-05-07 | 2008-02-28 | Advanced Micro Devices, Inc., Sunnyvale | Speichervorrichtung mit einem sich selbst einbauenden polymer und verfahren zur herstellung derselben |
US6480438B1 (en) | 2001-06-12 | 2002-11-12 | Ovonyx, Inc. | Providing equal cell programming conditions across a large and high density array of phase-change memory cells |
US6589714B2 (en) | 2001-06-26 | 2003-07-08 | Ovonyx, Inc. | Method for making programmable resistance memory element using silylated photoresist |
US6613604B2 (en) | 2001-08-02 | 2003-09-02 | Ovonyx, Inc. | Method for making small pore for use in programmable resistance memory element |
US6570784B2 (en) | 2001-06-29 | 2003-05-27 | Ovonyx, Inc. | Programming a phase-change material memory |
US6487113B1 (en) | 2001-06-29 | 2002-11-26 | Ovonyx, Inc. | Programming a phase-change memory with slow quench time |
US6462984B1 (en) | 2001-06-29 | 2002-10-08 | Intel Corporation | Biasing scheme of floating unselected wordlines and bitlines of a diode-based memory array |
US6605527B2 (en) | 2001-06-30 | 2003-08-12 | Intel Corporation | Reduced area intersection between electrode and programming element |
US6673700B2 (en) | 2001-06-30 | 2004-01-06 | Ovonyx, Inc. | Reduced area intersection between electrode and programming element |
US6642102B2 (en) | 2001-06-30 | 2003-11-04 | Intel Corporation | Barrier material encapsulation of programmable material |
US6511862B2 (en) | 2001-06-30 | 2003-01-28 | Ovonyx, Inc. | Modified contact for programmable devices |
US6514805B2 (en) | 2001-06-30 | 2003-02-04 | Intel Corporation | Trench sidewall profile for device isolation |
US6511867B2 (en) | 2001-06-30 | 2003-01-28 | Ovonyx, Inc. | Utilizing atomic layer deposition for programmable device |
US6951805B2 (en) | 2001-08-01 | 2005-10-04 | Micron Technology, Inc. | Method of forming integrated circuitry, method of forming memory circuitry, and method of forming random access memory circuitry |
US6590807B2 (en) | 2001-08-02 | 2003-07-08 | Intel Corporation | Method for reading a structural phase-change memory |
US6737312B2 (en) * | 2001-08-27 | 2004-05-18 | Micron Technology, Inc. | Method of fabricating dual PCRAM cells sharing a common electrode |
US6881623B2 (en) * | 2001-08-29 | 2005-04-19 | Micron Technology, Inc. | Method of forming chalcogenide comprising devices, method of forming a programmable memory cell of memory circuitry, and a chalcogenide comprising device |
US6955940B2 (en) * | 2001-08-29 | 2005-10-18 | Micron Technology, Inc. | Method of forming chalcogenide comprising devices |
US6784018B2 (en) * | 2001-08-29 | 2004-08-31 | Micron Technology, Inc. | Method of forming chalcogenide comprising devices and method of forming a programmable memory cell of memory circuitry |
US20030047765A1 (en) * | 2001-08-30 | 2003-03-13 | Campbell Kristy A. | Stoichiometry for chalcogenide glasses useful for memory devices and method of formation |
US6646902B2 (en) * | 2001-08-30 | 2003-11-11 | Micron Technology, Inc. | Method of retaining memory state in a programmable conductor RAM |
US6709958B2 (en) * | 2001-08-30 | 2004-03-23 | Micron Technology, Inc. | Integrated circuit device and fabrication using metal-doped chalcogenide materials |
US6507061B1 (en) | 2001-08-31 | 2003-01-14 | Intel Corporation | Multiple layer phase-change memory |
JP4214055B2 (ja) | 2001-09-01 | 2009-01-28 | エナージー コンバーション デバイセス インコーポレイテッド | 青色レーザおよび/またはプラズモンレンズを用いて光データ記憶検索システムにおいて増大されたデータ記憶 |
US6586761B2 (en) | 2001-09-07 | 2003-07-01 | Intel Corporation | Phase change material memory device |
US6545287B2 (en) * | 2001-09-07 | 2003-04-08 | Intel Corporation | Using selective deposition to form phase-change memory cells |
US6690026B2 (en) | 2001-09-28 | 2004-02-10 | Intel Corporation | Method of fabricating a three-dimensional array of active media |
WO2003032392A2 (en) | 2001-10-09 | 2003-04-17 | Axon Technologies Corporation | Programmable microelectronic device, structure, and system, and method of forming the same |
US6566700B2 (en) | 2001-10-11 | 2003-05-20 | Ovonyx, Inc. | Carbon-containing interfacial layer for phase-change memory |
DE60212679D1 (de) | 2001-10-26 | 2006-08-03 | Univ Arizona | Programmierbare oberflächenkontrollbauelemente sowie deren anwendung |
US6545907B1 (en) | 2001-10-30 | 2003-04-08 | Ovonyx, Inc. | Technique and apparatus for performing write operations to a phase change material memory device |
US6576921B2 (en) * | 2001-11-08 | 2003-06-10 | Intel Corporation | Isolating phase change material memory cells |
US6815818B2 (en) * | 2001-11-19 | 2004-11-09 | Micron Technology, Inc. | Electrode structure for use in an integrated circuit |
US6791859B2 (en) * | 2001-11-20 | 2004-09-14 | Micron Technology, Inc. | Complementary bit PCRAM sense amplifier and method of operation |
US6625054B2 (en) | 2001-12-28 | 2003-09-23 | Intel Corporation | Method and apparatus to program a phase change memory |
US6667900B2 (en) | 2001-12-28 | 2003-12-23 | Ovonyx, Inc. | Method and apparatus to operate a memory cell |
US6512241B1 (en) | 2001-12-31 | 2003-01-28 | Intel Corporation | Phase change material memory device |
WO2003079463A2 (en) | 2002-03-15 | 2003-09-25 | Axon Technologies Corporation | Programmable structure, an array including the structure, and methods of forming the same |
US6671710B2 (en) | 2002-05-10 | 2003-12-30 | Energy Conversion Devices, Inc. | Methods of computing with digital multistate phase change materials |
US6918382B2 (en) | 2002-08-26 | 2005-07-19 | Energy Conversion Devices, Inc. | Hydrogen powered scooter |
-
2002
- 2002-02-20 US US10/081,594 patent/US6809362B2/en not_active Expired - Lifetime
-
2003
- 2003-02-05 KR KR1020047013076A patent/KR100635366B1/ko not_active IP Right Cessation
- 2003-02-05 CN CNB038085151A patent/CN100449644C/zh not_active Expired - Fee Related
- 2003-02-05 EP EP03708950A patent/EP1476876B1/en not_active Expired - Lifetime
- 2003-02-05 AU AU2003212907A patent/AU2003212907A1/en not_active Abandoned
- 2003-02-05 WO PCT/US2003/003226 patent/WO2003073428A1/en active IP Right Grant
- 2003-02-05 AT AT03708950T patent/ATE358876T1/de not_active IP Right Cessation
- 2003-02-05 CN CN2008101738949A patent/CN101414659B/zh not_active Expired - Fee Related
- 2003-02-05 JP JP2003572035A patent/JP2005518671A/ja active Pending
- 2003-02-05 DE DE60312961T patent/DE60312961T2/de not_active Expired - Lifetime
- 2003-02-18 TW TW092103287A patent/TW587347B/zh active
-
2004
- 2004-06-10 US US10/864,419 patent/US6908808B2/en not_active Expired - Lifetime
-
2005
- 2005-03-16 US US11/080,442 patent/US7202520B2/en not_active Expired - Lifetime
-
2007
- 2007-01-31 US US11/700,086 patent/US7498231B2/en not_active Expired - Lifetime
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6084796A (en) * | 1996-05-30 | 2000-07-04 | Axon Technologies Corporation | Programmable metallization cell structure and method of making same |
CN1276905A (zh) * | 1997-08-15 | 2000-12-13 | 薄膜电子有限公司 | 一种铁电体数据处理器件 |
WO1999028914A2 (en) * | 1997-12-04 | 1999-06-10 | Axon Technologies Corporation | Programmable sub-surface aggregating metallization structure and method of making same |
US6034882A (en) * | 1998-11-16 | 2000-03-07 | Matrix Semiconductor, Inc. | Vertically stacked field programmable nonvolatile memory and method of fabrication |
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US20040223357A1 (en) | 2004-11-11 |
JP2005518671A (ja) | 2005-06-23 |
DE60312961D1 (de) | 2007-05-16 |
US6908808B2 (en) | 2005-06-21 |
EP1476876B1 (en) | 2007-04-04 |
US6809362B2 (en) | 2004-10-26 |
WO2003073428A1 (en) | 2003-09-04 |
US20070128792A1 (en) | 2007-06-07 |
KR100635366B1 (ko) | 2006-10-17 |
TW587347B (en) | 2004-05-11 |
CN101414659B (zh) | 2010-11-03 |
TW200304235A (en) | 2003-09-16 |
DE60312961T2 (de) | 2007-12-13 |
AU2003212907A1 (en) | 2003-09-09 |
US20030156452A1 (en) | 2003-08-21 |
US7498231B2 (en) | 2009-03-03 |
KR20040083457A (ko) | 2004-10-01 |
CN101414659A (zh) | 2009-04-22 |
CN1647209A (zh) | 2005-07-27 |
US20050157567A1 (en) | 2005-07-21 |
US7202520B2 (en) | 2007-04-10 |
ATE358876T1 (de) | 2007-04-15 |
EP1476876A1 (en) | 2004-11-17 |
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