CN100521120C - 经表面粗化的高效（B，Al，Ga，In）N基发光二极管 - Google Patents

经表面粗化的高效（B，Al，Ga，In）N基发光二极管 Download PDF

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CN100521120C
CN100521120C CNB2003801109459A CN200380110945A CN100521120C CN 100521120 C CN100521120 C CN 100521120C CN B2003801109459 A CNB2003801109459 A CN B2003801109459A CN 200380110945 A CN200380110945 A CN 200380110945A CN 100521120 C CN100521120 C CN 100521120C
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T·藤井
Y·高
E·L·胡
S·中村
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Abstract

一种(B，Al，Ga，In)N基发光二极管(LED)，其中光通过所述LED的氮面(N面)(42)被提取并且所述N面的表面被粗化形成一个或多个六角形锥面。所述粗化表面减少了在所述LED内部的光反射的重复发生，并因此在所述LED外部提取到更多的光。所述N面的所述表面通过各向异性蚀刻进行粗化，所述蚀刻包括干式蚀刻或者光致化学(PEC)蚀刻。

Description

经表面粗化的高效(B，Al，Ga，In)N基发光二极管
技术领域
【0001】本发明涉及发光二极管，且尤其涉及经表面粗化的(B，Al，Ga，In)N基高效发光二极管。
背景技术
【0002】(注意：本申请参考了大量不同的出版物，其贯穿于本说明书中并以一个或多个参考号表示。依照这些参考号顺序排列的这些不同的出版物可以在以下题名为“参考文献”的部分中找到。这些出版物中的每一个均通过引用结合在本说明书中。)
【0003】氮化镓(GaN)基的宽带隙半导体发光二极管(LED)已经投入使用约十年了。随着全彩色LED显示屏、LED交通信号、白光LED等等的实现，LED开发的进程已经在LED技术领域中带来了巨大变化。
【0004】最近，高效率白光LED由于可能替代荧光灯，已经引起了极大兴趣。特别是，白光LED的效率(74lm/W)(见参考文献[1])正在接近普通荧光灯的效率(75lm/W)。虽然如此，在效率方面还有必要做更多改进。
【0005】原则上有两种途径来改进LED的效率。第一种途径是提高内部量子效率(internal quantum efficiency，ηi)，其决定于晶体质量和外延层结构，而第二种途径是增大光提取效率(light extraction efficiency，ηextraction)。
【0006】提高内部量子效率不易做到。对于蓝光LED，典型ηi值大于70％(见参考文献[2])，而生长在低位错GaN衬底上的紫外(UV)LED最近展现出大约为80％的ηi(见参考文献[3])。这些数值几乎没有改进空间。
【0007】另一方面，光提取效率方面则有很大的改进空间。在消除光的内部损耗方面，可解决大量问题，包括：高反射镜、低反射表面(例如粗化表面)、高散热结构等等。
【0008】例如，鉴于GaN(n≈2.5)(见参考文献[4])和空气的折射率，光逃逸锥面(light escape cone)的临界角大约为23°。假设光从侧壁发出且忽略后侧，那么预计只有接近4％的内光(internal light)可以被提取。所述逃逸锥面外部的光被反射进入衬底且被活性层(active layer)或者电极重复反射或者吸收，除非它穿过所述侧壁逃逸。
【0009】LED的结构影响到能发出多少光。LED结构对光提取效率的影响最好是通过实例来描述。以下实例描述了多种类型的LED结构。
【0010】图1是传统的LED结构的剖视图，该结构包括p型垫片电极(pad electrode)10、半透明电极12、p型层14、活性区有源区16、n型层18、n型电极20、和衬底22。因为GaN通常生长在绝缘衬底例如蓝宝石上，因此p型和n型电极10、20有必要在相同的平面上制作，并且从而产生的电极10、20的器件结构引入了横向电流。由于p型GaN的高电阻率，可用一层金属薄膜作为半透明电极12，以在p型GaN上进行电流扩散(current spreading)。理想的半透明电极12的透明度应该是100％；然而，在GaN基LED中使用的薄金属电极的透明度值最多是70％。此外，垫片电极10应该是为线路键合(wire bonding)形成的，然而它遮蔽了从LED内部发出的光；因此，提取效率预计相当低。
【0011】图2是倒装(flip-chip)型LED结构的剖视图，其包括透明蓝宝石衬底24、n型层26、n型电极28、活性区有源区30、p型层32、p型电极34、焊料36和主基座(host submount)38。为了提高外部效率(external efficiency)，可以通过所述倒装型LED结构的透明蓝宝石衬底24来提取光。比起传统的LED，这种方法的优势在于使用金属薄膜和垫片电极减少了光吸收。然而，大部分从活性区有源区发出的光将在衬底24与n型层26之间的交界面以及衬底24与空气之间的界面处发生反射。
【0012】一种能将GaN膜从蓝宝石衬底上剥离的方法被称为“激光剥离”(laser lift off，LLO)技术。通过将这种方法应用于倒装型GaN基LED，可以实现无蓝宝石衬底的GaN LED。假设所产生的GaN表面被加工成非平面取向(non-planar orientation)，光提取效率预期有重大改进。
【0013】另一条增大提取效率的途径是粗化LED的表面(见参考文献[5])，这抑制了内部光的反射并使光向上散射。然而，粗化表面LED仅仅在关于磷化镓族(GaP family)材料的文章中提及，原因在于GaN是耐久性非常好的材料，且普通的湿式蚀刻法不太有效。因此虽然最早在1970年，已考虑到粗化半导体表面以散射光的概念，但是相信产生这种LED结构是困难且昂贵的。
【0014】然而如上所述，典型的GaN基LED是由处于蓝宝石或者碳化硅(SiC)衬底上的p-GaN/活性层/n-GaN薄膜组成的。虽然制作粗化表面需要一定厚度的GaN层(见参考文献[6])，然而由于p-GaN的相对高的电阻率，不希望生长出厚的p-GaN，如果光是通过p-GaN提取的，在p-GaN表面上就要求有半透明的接触面，而一些用于粗化表面的措施，例如干式蚀刻法(见参考文献[7])，可能引起电性能恶化。同样不希望通过金属有机化学汽相沉淀法(MOCVD)来生长p侧朝下(p-side down)结构，原因在于镁(Mg)的记忆效应(见参考文献[8])，其损害了活性层。
【0015】近来，一种激光剥离(LLO)方法已经被用来从生长在衬底上的GaN膜上分离蓝宝石衬底(见参考文献[9-11])。进一步，LLO已经被用来制作GaN基LED(见参考文献[12，13])。然而，没有任何参考文献涉及这种技术在表面形态(surface morphology)或者提取效率方面的效果。
【0016】另一方面，在本发明中，使用倒装技术(见参考文献[14])和LLO方法，可以制作无衬底氮(N)侧朝上的GaN基LED结构。之后，可以采取各向异性蚀刻处理来粗化N侧朝上GaN基LED的表面。这导致有助于光提取的六角形“类锥(cone-like)”表面。对比粗化前的LED，表面经过最佳粗化的LED的提取效率增大超过100％。
【0017】请注意，一段时间以来，GaN已被认为难以被各向异性蚀刻。这是正确的，因为和其它半导体材料相比，GaN是化学性质稳定的材料。采用干式蚀刻法来制作粗糙表面是可能的，但需要附加处理，例如光刻蚀，因而采用干式蚀刻法不可能在GaN上制作出优良的类锥表面。
【0018】当在镓面(Ga面)GaN上运用光增强化学(photo-enhancedchemical，PEC)蚀刻法时，所述表面上形成小凹坑。这与导致截然不同类锥特征的氮面(N面)GaN的PEC蚀刻形成对比。虽然有一些报告涉及采用LLO技术制作GaN基LED，但是本发明采用各向异性蚀刻法来制作GaN基LED的N面GaN表面上的类锥结构。
发明内容
【0019】本发明描述了氮化镓(GaN)基的发光二极管(LED)，其中，光是通过LED的氮面(N面)被提取的而且所述N面的表面被粗化而形成一个或多个六角形锥面。所述粗化表面减少了光在LED内部重复发生的反射，且因此在所述LED外提取到更多的光。
【0020】所述N面的表面通过各向异性蚀刻法被粗化。所述各向异性蚀刻法包括干式蚀刻法或者光增强化学(PEC)蚀刻法。
【0021】在一个实施例中，N面GaN是通过激光剥离(LLO)技术制备的。在另一个实施例中，LED是在c平面GaN晶片上生长的，p型层的表面是镓面(Ga面)，而n型层的表面是氮面(N面)。
附图说明
【0022】现在参考附图，贯穿所有附图，其中相同的参考编号代表相同的部件。
【0023】图1是传统LED结构的剖视图。
【0024】图2是倒装型LED结构的剖视图。
【0025】图3是表面粗化LED的示意图。
【0026】图4是描述本发明的优选实施例中采用的操作步骤的流程图。
【0027】图5(a)到(f)进一步说明对LED进行表面粗化的制作步骤。
【0028】图6(a)示出了带有电流阻碍层(current-blocking layer)的LED，而图6(b)示出了带有电流约束框架(current-confining frame)的LED。
【0029】图7(a)和7(b)是带有十字形n电极的LLO-LED的俯视显微图。
【0030】图8(a)和8(b)是经不同蚀刻时间进行PEC蚀刻后，GaN的N面的扫描电子显微照片(SEM)图像。
【0031】图9(a)和9(b)示出了分别来自平坦表面LED和粗化表面LED的电致发光(EL)光谱；而
【0032】图10是上升的EL输出功率对比DC注入电流(L-I)特性的曲线图，其对应于室温下经不同蚀刻时间而得的LED。
具体实施方式
【0033】在以下优选实施例的描述中，参考构成本说明书一部分的附图，且附图以图解方式示出了其中一个可实施本发明的特定实施例。应该了解的是，在不偏离本发明的范围的前提下，可采用其它实施例并可进行结构改造。
概述
【0034】本发明提供了一种装置，该装置通过粗化GaN基LED的表面而提高了提取效率。具体地说，对N面c平面GaN表面施用各向异性PEC蚀刻方法导致形成锥形表面特征。这种粗化的表面减少了LED内部重复发生的光反射，并因此在所述LED外提取到更多的光。并且，对比其它可能危及材料质量的表面粗化方法，本发明的方法简单、可重复而且应该不会损害材料，所有这些优点使得本发明更适于制作LED。
LED结构
【0035】图3是粗化表面LED的示意图，其包括n型电极40、n型层42、有源区44、p型层46和p型电极48，该p型电极48已通过焊接层50倒装粘合到硅(Si)基台52，该硅基台52包括n型电极54。所述n型层42、有源区44和p型层46由(B，Al，Ga，In)N合金制成。采用干式或者PEC蚀刻方法来粗化n型层42的表面。为了能获得所需表面，有必要设定合适的条件，例如对于干式蚀刻来说设定合适的等离子体化学成分和等离子体功率，和对于PEC蚀刻来说设定合适的电解质和灯功率。重要的是，这种GaN基LED应该沿着它的c轴生长而且这种n型GaN表面应该是N面，原因在于在N面GaN上观察各向异性蚀刻要比在Ga面GaN上容易得多。
【0036】注意c平面GaN具有如下结构：只包括Ga原子的平面和只包括N原子的平面是堆在一起的，或者是交替地叠起来的。如果一个表面是Ga面，则相对的表面是N面。从晶体生长和器件性能的观点看，Ga面c平面GaN一般是优选的，基于这个事实，N面GaN需要借助LLO技术来制备，或者可以选择地，LED结构可以在c平面大块GaN晶片上生长。
【0037】光从活性区有源区44射出，射向粗化的n型GaN表面42并被该表面散射，该表面并不将所述光反射回所述活性区有源区。所希望的是，所述p型电极48具有高反射性以减少光吸收，并从而使朝向所述n型GaN表面42反射的光增多。在实验结果中，已经确定的是：对比带有平坦表面的LED，本发明采用的带有粗化表面的LED的上向光(upward light)输出功率增大为两倍或者三倍。
操作步骤
【0038】图4是描述在本发明的优选实施例中所采用的操作步骤的流程图。
【0039】方框56表示如下步骤：通过MOCVD在c平面蓝宝石衬底上生长Ga面外延层，从而产生样品。
【0040】方框58表示如下步骤：在MOCVD之后使所述样品退火以进行p型激活(p-type activation)。
【0041】方框60表示如下步骤：在所述样品上执行p型金属化操作，其包括但不局限于银(Ag)或者铝(Al)，以形成高反射p-GaN触点。
【0042】方框62表示如下步骤：在所述样品上沉积厚金(Au)层，接着在热蒸发器(thermal evaporator)中通过Sn蒸发来沉积作为焊接金属的锡(Sn)层。
【0043】方框64表示如下步骤：在280℃以上的温度，翻转所述样品并将其粘附在Au涂布的Si衬底/基台上，其中形成Au/Sn合金，这有助于将所述样本粘合到Si衬底上。
【0044】方框66表示如下步骤：执行LLO操作，即，使用氟化氪(KrF)准分子激光(eximer laser light)(248nm)，通过蓝宝石衬底的背面照射所述样品的透明蓝宝石衬底，从而导致在GaN/蓝宝石衬底界面处的GaN局部分解。具体地说，通过对所述样品之上的KrF准分子激光光斑进行光栅操作，GaN基LED膜就转变成Si衬底/基台。
【0045】方框68表示如下步骤：对所述样品进行KrF激光光栅操作后，将蓝宝石衬底从所述样品剥离。
【0046】方框70表示如下步骤：在所述样品的分离的GaN表面上，用氯化氢(HCl)溶液清除任何残留的Ga微滴(droplet)。
【0047】方框72表示如下步骤：使转变的GaN变薄，直到掺Si的N面GaN暴露在所述样品上。
【0048】方框74表示如下步骤：在所述样品的暴露的N面GaN上，沉积钛/铝/钛/金(Ti/Al/Ti/Au)电极，作为n型触点或者说电极。
【0049】方框76表示如下PEC蚀刻步骤：将所述样品浸在氢氧化钾(KOH)电解质溶液中，并用氙/汞(Xe/Hg)灯照射N面GaN表面，通过这种方式来使上表面被粗化。PEC蚀刻的细节描述于参考文献[15]中。
【0050】方框78表示如下步骤：采用干式蚀刻、切割(dicing)或者劈削(cleaving)方法分离所述样品的Si衬底上的每一个器件。
【0051】图5(a)到(f)进一步说明了具有粗化表面的LED的制作步骤，其中所述LED结构包括p型电极80、GaN基LED膜82、蓝宝石衬底84、焊接金属86、基台(载体)88和n型电极90。具体地说，图5(a)示出了p型电极80沉积后的结果，图5(b)示出了所述LED被粘附到主基台88上之后的结果，图5(c)示出了用LLO将蓝宝石衬底分离后的结果，图5(d)示出了n型电极90沉积后的结果，图5(e)示出了GaN表面82粗化后的结果，而图5(f)示出了器件分离后的结果。
可能的修改
【0052】虽然上文已经描述了基本结构，但是还存在大量可能的修改和变化方案。
【0053】图6(a)示出了带有电流阻碍层的LED，而图6(b)示出了带有电流约束框架的LED，其中所述LED包括n型电极92、n型层94、活性层96、p型层98、p型电极100、电流阻碍层102、和电流约束框架104。
【0054】图6(a)中，所述LED具有电流阻碍层102，其对准置于n型电极92下方。此电流阻碍层102防止电流集中在n型电极92之下，从而避免了n型电极92之下发出的光被吸收，因而提高了提取效率。SiO2之类的绝缘物适于放置在p-GaN层98上，这是因为在电阻性的p-GaN层98中几乎不产生电流扩散。
【0055】图6(b)中，所述LED具有绝缘体制成的电流约束框架104。如果使用干式蚀刻法或者切割法来分离器件，若表面受到损害，器件的侧壁可能产生漏电流。此漏电流降低了LED的效率和使用寿命。电流约束框架104有助于抑制通过LED的侧壁的漏电流，并且如果此框架的宽度选择适当，不会明显减小发光面积。
【0056】虽然Si衬底已经被描述成LLO操作中的主基台，不过要实践本发明也可以使用其它可供选择的衬底材料。虽然Si比蓝宝石更便宜而且具有更高的热传导率，但是其它衬底，例如SiC、钻石、AlN、或者像CuW这样的各种金属，从热传导的观点看，也可以适合使用。
【0057】目前，GaN器件还能够直接在SiC和Si衬底上生长。如果GaN基LED是在SiC或者Si上生长的，传统的干式蚀刻或者湿式蚀刻可以分离衬底。通过使用大块GaN衬底，可以省略LLO操作。
【0058】对于LED制作，样品尺寸也是一个关键点。现在，大尺寸的LED因为能满足大功率LED的需求而得到关注。即使n型GaN的电阻率比p型GaN的小，出于电流扩散目的，其尺寸也影响了n型电极的几何排列。
实验结果
【0059】在发明者进行的实验中，Ga面外延层是通过MOCVD在c平面蓝宝石衬底上生长的。其结构包括4微米厚不掺杂和掺杂Si的GaN层、5周期的GaN/InGaN的多量子阱(MQW)、20纳米厚掺杂Mg的Al0.2Ga0.8N层、和0.3微米厚掺杂Mg的GaN。MOCVD操作之后，所述样品被退火以进行p型激活，且随后执行p型金属化操作。采用Ag基电极作为高反射p-GaN触点。在样品上厚Au沉积，接着在热蒸发器中进行Sn蒸发。在280℃温度，翻转所述晶片并将其粘附于Au涂布的Si基台，从而形成Au和Si的合金，这有助于强化所述晶片和基台的粘合。采用KrF激光(248nm)以进行LLO操作，在此操作中，所发射激光通过透明的蓝宝石衬底，在GaN与蓝宝石交界处引起了GaN的局部分解。在所述样品上进行KrF激光的光栅化操作后，蓝宝石衬底即被剥离。在转变的GaN表面上的残余的Ga微滴由HCl溶液清除。接着，使转变的GaN变薄，直到掺杂Si的GaN暴露出来。在暴露出的N面n-GaN上形成n触点，并且通过活性离子蚀刻(reactive ion etching，RIE)使每一个器件与其临近部分分离。最后，采用PEC蚀刻以便粗化表面顶层。采用KOH溶液和Xe/Hg灯分别作为电解液和光源。所述LED的输出功率使用位于LED片上方高度7毫米处的Si检测器装置进行测量。
【0060】图7(a)和7(b)是带有十字形n电极的LLO-LED的俯视显微照片，其中所述LED粘附在Si衬底上。图7(a)示出了粗化之前的表面而图7(b)示出了粗化之后的表面。因为在PEC蚀刻期间n电极阻挡了UV光，其下的GaN没有被蚀刻，因而粗化后所述电极保留在GaN上。可用铟锡氧化物(ITO)之类透明电极作为电流扩散电极。
【0061】图8(a)和8(b)是经不同蚀刻时间的PEC蚀刻之后，GaN的N面的扫描电子显微照片(SEM)图像。注意经PEC蚀刻的N面GaN表面包括多个六角形锥面，这与Youtsey等人(见参考文献[16])所报告的PEC蚀刻GaN表面不同。这种不同被认为是缘于GaN的表面极性(surface polarity)。通过比较图8(a)中的2分钟(min)蚀刻表面和图8(b)中的10分钟蚀刻表面，后者特征尺寸增大而且六角锥的棱面显得更清晰。
【0062】在从LED中进行光提取方面，锥形表面显得非常有效。并且，实验结果表明锥形可以提取更多的光。举例而言，在GaN晶体中蓝光LED的波长约为200nm。如果锥形的尺寸比该值小得多，那么光可能不受此粗糙度的影响。另一方面，如果锥形的尺寸接近该值，光可能发生散射或者衍射。
【0063】实验结果中，已经确定的是，所述粗化表面包括许多六角形锥面，其具有的角度等于或者小于：
2sin-1(nair/ns)≈47.2°
对于GaN，其中nair是空气的折射率，而ns是GaN的折射率。类似地，已经确定的是，粗化表面包括许多六角形锥面，其具有的角度等于或者小于：
2sin-1(nenc/ns)
对于环氧，其中nenc是环氧的折射率，而ns是GaN的折射率。
【0064】所述表面可能没有必要是锥形，而应该考虑格状结构(grating structure)和光子晶体(photonic crystal)。对于光提取，这些可能是更好的结构。然而，光子晶体的制作需要精确的设计和操作，这比制作锥形粗糙表面更费成本。
【0065】在PEC蚀刻之前的“类镜(mirror-like)”表面随着蚀刻时间的增加而显露褪色。如果将高反射金属沉积在GaN膜的另一侧，所述表面显白色；否则它较暗。这据信是因为在空气/GaN交界面，光反射受到抑制，而如果在GaN背面有高反射性金属，射入GaN的光将再次出来，在所述粗化表面散射。
【0066】图9(a)和9(b)分别示出了来自平坦表面LED和粗化表面LED的电致发光(EL)光谱。室温(RT)下，以25A/cm2 DC的正向电流密度进行测量。如图9(a)所示，平坦表面LED的光谱呈现多峰发射(multi-peaked emission)，表明从有源区发出的光在垂直的GaN腔中发生了干涉，该腔夹在GaN/金属形成的镜面和GaN/空气形成的镜面之间。相反地，如图9(b)所示，在粗化表面LED上观察不到纵模。这意味着，粗化的GaN/空气交界面散射了光，致使共振被抑制。
【0067】图10是一在室温经不同蚀刻时间而得的LED的上升EL输出功率对DC注入电流(L-I)特性的曲线图。这些数据是在PEC蚀刻之前和之后从相同的设备中获得的，因此能够忽略除表面形态之外导致这种不同的任何因素。任一L-I曲线都示出了直到50mA的线性特性。因为对比蓝宝石，Si具有相对较高的热传导率，因此这些器件在高功率操作方面具有优势。随着PEC蚀刻时间增加，给定电流的输出功率增加。比较对应于平坦表面LED和10分钟蚀刻表面LED的输出功率，这种粗化处理导致输出功率增加为2.3倍。根据在不同设备上进行的其它测量，粗化处理后，功率也显示出两到三倍的增长。因为，比起粗化表面LED，由于光的横向传播(lateral propagation)，平坦表面LED往往从LED片的侧壁发出更多的光，所以如果总功率是以积分球(integrating sphere)来计量，那么输出功率的差异将比较小。但是，借助于各向异性蚀刻技术，提取效率的这种提高仍显示出了重大进步。
【0068】总之，出于增大提取效率的目的，各向异性蚀刻法已被应用于GaN基LED。LED的输出测试结果已经表明：可假定由于GaN膜中光传播减少，粗化外貌(roughened appearance)和提取效率之间存在一定关系。虽然还没有测量总的积分光功率，然而在提取效率方面的最大增长已经超过100％。值得注意的是，本说明书所述技术简单，而且不需要复杂的操作，这表明采取表面粗化将适合于制作GaN基LED。
参考文献
【0069】本说明书结合引用以下参考文献：
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结论
【0070】在此总结本发明优选实施例的描述。以下描述一些用于实施本发明的可选实施例。
【0071】本发明中，除了MOCVD，还可以使用许多不同的生长方法。
【0072】另外，可以采用蓝宝石或者碳化硅之外的其它衬底。
【0073】进一步，可构造不同的LED结构。举例而言，也可构造谐振腔LED(RCLED)或者微腔LED(MCLED)。
【0074】之前出于解释和说明的目的，已提供了对本发明的一个或多个实施例的描述。这并非毫无遗漏的而且也不是有意要将本发明局限于所公开的精确形式。在以上讲授的光的操作方面，可能有很多修改和变化方案。本发明的范围不应被此详细的描述所限制，而应受限于所附权利要求。

Claims (32)

1.一种C平面III族氮化物基发光二极管即C平面III族氮化物基LED，其中光是通过所述C平面III族氮化物基LED的氮面即N面的表面提取的，并且所述C平面III族氮化物基LED的所述N面的表面被结构化以便从所述C平面III族氮化物基LED提取光。
2.根据权利要求1所述的LED，其中所述III族氮化物基LED的所述N面的表面通过粗化或图案化而被结构化。
3.根据权利要求1所述的LED，其中所述N面的表面被结构化成一个或多个锥面。
4.根据权利要求1所述的LED，其中所结构化的表面减少了所述LED内重复发生的光反射，并因此从所述LED提取出更多的光。
5.根据权利要求1所述的LED，其中所述N面的表面是通过各向异性蚀刻被结构化的。
6.根据权利要求5所述的LED，其中所述各向异性蚀刻是干法蚀刻。
7.根据权利要求5所述的LED，其中所述各向异性蚀刻是湿法蚀刻
8.根据权利要求7所述的LED，其中所述各向异性蚀刻是光增强化学蚀刻即PEC蚀刻。
9.根据权利要求1所述的LED，其中所述N面是所述LED的n型层。
10.根据权利要求1所述的LED，其中所述N面是通过衬底去除技术制备的。
11.根据权利要求1所述的LED，其中所述LED生长在c平面氮化镓即GaN晶片上并且镓面即Ga面是p型层。
12.根据权利要求1所述的LED，其中所述LED是由n型电极、n型层、有源区、p型层和p型电极组成的。
13.根据权利要求12所述的LED，其中所述n型层、有源区和p型层各自是由III族氮化物合金制成的。
14.根据权利要求12所述的LED，其中所述p型电极具有高反射性，以减少光吸收，并增大朝向所述n型层表面的光反射。
15.根据权利要求12所述的LED，其中所述LED包括电流阻碍层，其对准置于所述n型电极下方以防止电流集中在所述n型电极之下，由此能避免所述n型电极之下发出的光被吸收，并能提高提取效率。
16.根据权利要求12所述的LED，其中所述LED包括绝缘物制成的电流约束框架，其抑制通过所述LED的侧壁的漏电流，而不明显减小发光面积。
17.根据权利要求3所述的LED，其中所结构化的表面是由多个六角形锥面组成的，其具有的角度等于或者小于：
2sin-1(nair/ns)
其中nair是空气的折射率，而ns是III族氮化物的折射率。
18.根据权利要求3所述的LED，其中所结构化的表面是由多个六角锥面组成的，其具有的角度等于或者小于：
2sin-1(nenc/ns)
其中nenc是环氧的折射率，而ns是III族氮化物的折射率。
19.一种制作C平面III族氮化物基发光二极管即C平面III族氮化物基LED的方法，其中光是通过所述C平面III族氮化物基LED的氮面即N面的结构化表面提取的，所述方法包括：
将生长后的所述N面的表面结构化成以从所述C平面III族氮化物基LED中提取光。
20.根据权利要求19所述的方法，其中所述N面的表面被结构化成一个或多个锥面。
21.根据权利要求19所述的方法，其中使用各向异性蚀刻来结构化n型层的N面表面。
22.根据权利要求21所述的方法，其中所述各向异性蚀刻是干法蚀刻。
23.根据权利要求21所述的方法，其中所述各向异性蚀刻是湿法蚀刻。
24.根据权利要求23所述的方法，其中所述湿法蚀刻是光增强化学蚀刻即PEC蚀刻。
25.根据权利要求19所述的方法，其中所述N面的表面通过粗化或图案化而被结构化。
26.一种C平面III族氮化物基发光二极管即C平面III族氮化物基LED，其由n型电极、n型层、有源区、p型层和p型电极组成，其中所述n型层的氮面即N面表面在生长后被结构化以便光是通过所述n型层的所结构化的N面表面提取的。
27.根据权利要求26所述的LED，其中所述n型层的N面表面被结构化成一个或多个锥面。
28.根据权利要求26所述的LED，其中所述n型层的N面表面使用各向异性蚀刻来结构化。
29.根据权利要求28所述的LED，其中所述各向异性蚀刻是干法蚀刻。
30.根据权利要求28所述的LED，其中所述各向异性蚀刻是湿法蚀刻。
31.根据权利要求30所述的LED，其中所述湿法蚀刻是光增强化学蚀刻即PEC蚀刻。
32.根据权利要求26所述的LED，其中所述n型层的N面表面通过粗化或图案化而被结构化。
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