CN101033537A - 蒸发器输送安瓿 - Google Patents
蒸发器输送安瓿 Download PDFInfo
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- CN101033537A CN101033537A CNA2007100063142A CN200710006314A CN101033537A CN 101033537 A CN101033537 A CN 101033537A CN A2007100063142 A CNA2007100063142 A CN A2007100063142A CN 200710006314 A CN200710006314 A CN 200710006314A CN 101033537 A CN101033537 A CN 101033537A
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- Prior art keywords
- vessel
- gas
- container
- evaporator unit
- heat transfer
- Prior art date
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- PDPJQWYGJJBYLF-UHFFFAOYSA-J hafnium tetrachloride Chemical compound Cl[Hf](Cl)(Cl)Cl PDPJQWYGJJBYLF-UHFFFAOYSA-J 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
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- UDDUNMQYOPYWOG-UHFFFAOYSA-N 1-cyclopenta-2,4-dien-1-ylcyclohepta-1,3,5-triene Chemical compound C1(C=CC=C1)C1=CC=CC=CC1 UDDUNMQYOPYWOG-UHFFFAOYSA-N 0.000 claims description 4
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- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 4
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- OCFJBWXKUCBWIR-UHFFFAOYSA-N [N-]=[N+]=[N-].[N-]=[N+]=[N-].[Ti+2].C=CC=CC Chemical compound [N-]=[N+]=[N-].[N-]=[N+]=[N-].[Ti+2].C=CC=CC OCFJBWXKUCBWIR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052787 antimony Inorganic materials 0.000 claims description 4
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 4
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- 125000002619 bicyclic group Chemical group 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 4
- FQNHWXHRAUXLFU-UHFFFAOYSA-N carbon monoxide;tungsten Chemical group [W].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-] FQNHWXHRAUXLFU-UHFFFAOYSA-N 0.000 claims description 4
- KDUIUFJBNGTBMD-VXMYFEMYSA-N cyclooctatetraene Chemical compound C1=C\C=C/C=C\C=C1 KDUIUFJBNGTBMD-VXMYFEMYSA-N 0.000 claims description 4
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- DUNKXUFBGCUVQW-UHFFFAOYSA-J zirconium tetrachloride Chemical compound Cl[Zr](Cl)(Cl)Cl DUNKXUFBGCUVQW-UHFFFAOYSA-J 0.000 claims description 4
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- 229910007926 ZrCl Inorganic materials 0.000 claims 3
- FFGUZBNYCNLKHI-UHFFFAOYSA-N cyclopentane;ruthenium(1+) Chemical compound [Ru+]C1C=CC=C1 FFGUZBNYCNLKHI-UHFFFAOYSA-N 0.000 claims 3
- 125000005594 diketone group Chemical group 0.000 claims 3
- APHGZSBLRQFRCA-UHFFFAOYSA-M indium(1+);chloride Chemical compound [In]Cl APHGZSBLRQFRCA-UHFFFAOYSA-M 0.000 claims 3
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- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
- C23C16/4483—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material using a porous body
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
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- F17C3/00—Vessels not under pressure
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
- F17C—VESSELS FOR CONTAINING OR STORING COMPRESSED, LIQUEFIED OR SOLIDIFIED GASES; FIXED-CAPACITY GAS-HOLDERS; FILLING VESSELS WITH, OR DISCHARGING FROM VESSELS, COMPRESSED, LIQUEFIED, OR SOLIDIFIED GASES
- F17C3/00—Vessels not under pressure
- F17C3/02—Vessels not under pressure with provision for thermal insulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
- F17C—VESSELS FOR CONTAINING OR STORING COMPRESSED, LIQUEFIED OR SOLIDIFIED GASES; FIXED-CAPACITY GAS-HOLDERS; FILLING VESSELS WITH, OR DISCHARGING FROM VESSELS, COMPRESSED, LIQUEFIED, OR SOLIDIFIED GASES
- F17C2203/00—Vessel construction, in particular walls or details thereof
- F17C2203/03—Thermal insulations
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/30—Hydrogen technology
- Y02E60/32—Hydrogen storage
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S261/00—Gas and liquid contact apparatus
- Y10S261/65—Vaporizers
Abstract
本发明公开一种半导体制造过程中所用的蒸发器输送系统(10),其包括用于容纳可蒸发的源材料的多个垂直堆叠的容器(22)。每个垂直堆叠的容器包括延伸进入每个堆叠容器(22)内部(27)中的多个通风突起物(30),从而提供用于使载气在相邻的垂直堆叠容器(22)之间通过的通道。
Description
本申请是申请日2003年7月1日、申请号03817716.1的专利申请的分案申请。
发明领域
本发明涉及一种蒸发器,特别涉及一种蒸发器输送系统,其包括多个容器以增大用于蒸发液体和固体材料的表面积,该材料例如是在化学气相沉积(CVD)、原子层化学气相沉积(ALCVD)和离子注入方法中所用的液体和固体反应物。
相关领域说明
在半导体晶片处理中,化学气相沉积(CVD)被广泛用于制备薄膜和涂层。由于CVD例如具有可提供高保形和高质量薄膜的能力,并且处理时间相对较高,所以在许多方面中其是有利的沉积方法。此外,CVD在涂覆不规则形状基底中也是有利的,包括即使对于深接触和其他开口时也可提供高保形薄膜。
一般地,CVD技术包括在有利于所需反应的温度和压力条件下,将气态反应物输送至发生化学反应的基底表面上。可利用CVD形成的各层的类型和组分受将反应物或反应物前体输送至基底表面上的能力的限制。通过在载气中输送液体反应物可将各种液体反应物和前体成功地用于CVD应用中。在液体反应物CVD系统中,通常以可控制的速率使载气鼓泡通过液体反应物容,从而用液体反应物饱和载气,然后将饱和的载气输送至反应室。
对将固体反应物输送到CVD反应室进行了相似的试验,但成功更小。在CVD处理中使用升华器/起泡器方法输送固体前体,其中前体通常置于升华器/起泡器存储器中,然后将前体加热至其升华温度,从而使其转变成可用载气如氢、氦、氩或氮输送至CVD反应器的气态化合物。然而,由于多种原因,这种过程在将固体前体输送至反应室时的可靠性和再现性方面没有取得成功。这种方法的主要问题集中在不能以可控制的速率均匀地蒸发固体,以使蒸发的固体前体的可再现流被输送到处理室。此外,由于固体前体在蒸发器系统中有限的暴露表面积及缺少均匀温度以提供最大程度的升华,所以难于使快速流动的载气流完全饱和。
在常规离子注入系统中固有存在相似的问题,该系统包括离子源,其中掺杂剂元素被离子化,随后被加速,形成定向于被注入的工作表面的离子束。当使用固体掺杂剂材料,其通常置于待加热的蒸发器内,随后形成的蒸气被输送到用于离子化的离子源的内部,随后形成离子束。
由于安全原因,固体离子源材料是极为优选的,然而,固体半导体掺杂剂存在严重的技术和使用问题。例如,在蒸发器中使用固体前体材料会增长仪器的故障时间,产品质量较差,蒸发器内会积聚沉积物。
现有技术中的蒸发器系统有许多缺点,包括蒸发器内冷凝材料的积聚,由于蒸发器中没有均匀加热在其内部形成“冷点”。不需要的沉积物的积聚在蒸发器系统中加剧,其需要用以旋转小瓶的内部移动表面和/或源材料的壁。这些内部结构会在蒸发器内产生额外的“冷点”,并使蒸发的材料进一步沉积。此外,由于沉积物在内部移动结构上的积聚,所以不能有效和可靠地操作这些蒸发器。对于在低蒸气压下温度敏感性的固体源材料而言,现有技术的蒸发器的缺点特别明显。因此,难于以可控制的速率蒸发固体,以使蒸发的固体前体的可再现流被输送到下流沉积系统。
因此,本领域中需要可有效地蒸发固体和/或液体化学物质而不会出现现有技术中的缺点的蒸发器系统,如源材料的热分离,由于蒸发器内沉积物的积聚而不可操作内部移动组件,由于蒸发器内的“冷点”低蒸气压化合物的冷凝,和/或不均匀的蒸气流至下流沉积系统。
发明概述
本发明涉及一种特别适用于半导体制造应用的用于蒸发固体和液体化学物质的蒸发器系统和方法。
在一个方面中,本发明涉及一种用于蒸发和输送源材料的蒸气输送系统,其可提供充足的表面积及均匀的载气流动,从而满足通常沉积应用所需的流速,其包括:
a)至少一个用于容纳可蒸发的源材料的容器;
b)位于该容器中的多个通风突起物,其中该通风突起物包括用于使该可蒸发的源材料通过的通道;及
c)用于使载气流通过该容器的载气管道。
在另一方面中,本发明提供一种用于蒸发和输送前体的蒸气输送系统,其包括:
a)安瓿,其包括安瓿底部、侧壁和可拆卸的顶部,以形成内部安瓿室;
b)与该安瓿连接的气体进口和气体出口;
c)位于该内部安瓿室中的至少一个容器,其中该容器包括容器底部和侧壁,以形成容器腔;及
d)至少位于容器底部上的多个通风突起物,以提供通过其中的通道,其中该通风突起物延伸进该容器腔。
如下文更充分说明的那样,该前体可以包括固体或液体源材料。优选地,该前体是固体前体,包括但不限于癸硼烷、硼、磷、镓、铟、铜、锑、四氯化铪、四氯化锆、砷、三氯化铟、金属有机β-二酮酸酯配合物、环戊二烯基环庚三烯基钛(CpTiCht)、三氯化铝、碘化钛、环辛四烯基环戊二烯基钛、双环戊二烯基钛二叠氮化物及羰基钨。
在另一方面中,本发明涉及一种蒸发器单元,其可在使处理工具改变最小的情况下插进常规安瓿中,其包括:
a)多个垂直堆叠的容器,其中每个容器包括用于容纳源材料的腔;
b)位于每个垂直堆叠的容器中并延伸进每个各自的腔中的多个通风突起物,其中该通风突起物在相邻的垂直堆叠的容器间形成用于使载气通过的通道;及
c)与多个垂直堆叠的容器接触并延伸通过每个垂直堆叠的容器的腔的载气管道。
在另一方面中,本发明提供一种蒸发器,其包括:
a)安瓿,其包括安瓿底部和安瓿侧壁,以形成内室;
b)封闭该内室的安瓿顶部;
c)与该安瓿顶部连接的气体进口和出口;
d)位于该内室中多个垂直堆叠的接触容器,其中每个容器包括容器底部和容器侧壁,以形成用于容纳固体前体材料的容器腔,及其中每个容器侧壁与该安瓿侧壁接触;
e)位于每个容器底部上的多个通风突起物,以在相邻的垂直堆叠的接触容器间提供通道,其中该通风突起物延伸进容器腔;
f)位于该内室中并与该气体进口连接用于将载气输送至该垂直堆叠的接触容器下面的载气汲取管;及
g)用于加热该安瓿的装置。
在另一方面中,本发明涉及一种容器,其包括随着锥形突起物延伸进该容器腔而缩窄的圆锥形孔。这种突起物结构基本上可使载气单向通过位于该安瓿中的多个垂直堆叠的容器。
在另一方面中,本发明提供一种将源材料蒸发和输送至下流处理室的方法,该方法包括:
a)提供多个相互连接的垂直堆叠的容器,其中含有可蒸发的源材料,其中每个相互连接的垂直堆叠的容器包括多个带通道的突起物;
b)将该相互连接的垂直堆叠的容器置于可密封的安瓿内;
c)加热该可密封的安瓿,热量足以蒸发其中的源材料;及
d)使载气通过该可密封的安瓿,以使该蒸发的源材料通过该可密封的安瓿进入该处理室。
从下面的说明书和所附的权利要求书中,可以更清楚本发明的其他各方面和特征。
附图简要说明
图1是本发明一个实施方案的蒸发器的立体图。
图2是本发明位于安瓿中的容器中的多个通风突起物的俯视图。
图3是容器的侧视图,表明本发明的多个圆柱形突起物。
图4是容器的侧视图,表明多个本发明的圆锥形突起物。
图5是本发明多个垂直堆叠的容器的侧视图。
图6是本发明蒸发器输送系统的简化示意图。
图7是曲线图,表明当载气流过本发明的安瓿时,加热安瓿和感测容器单元内的温度的结果。
图8是曲线图,表明加热安瓿和感测容器单元内和本发明安瓿内的突起物的温度的结果。
图9是容器的侧视图,表明多个包括侧面通风孔的圆锥形突起物。
图10表明本发明可选择的实施方案。
发明详细说明及其优选实施方案
本发明是基于下述的观察:在蒸发器系统中所用的某些源材料不能以足量被充分蒸发以满足的通常沉积应用所需的流速。在某些情况下,为实现所需的流速,超过200℃的高温已被用来提供升华速率,这会导致源材料分解。
本发明一个实施方案的蒸发器如图1所示,其克服了现有技术中的蒸发器的缺陷。蒸发器输送系统10包括由适合的导热材料制成的安瓿12,例如银、银合金、铜、铜合金、铝、铝合金、铅、包镍、不锈钢、石墨和/或陶瓷材料。安瓿包括底部14和侧壁16,从而形成内室。安瓿可以是有助于载气通过安瓿均匀流动的任何形状,如所示的圆柱形。安瓿基座优选的形状是制成极精确公差的圆柱形,从而仅允许精密制造的容器具有1/1000th~3/1000th英寸的间隙。容器安装需要各壁及为平行以确保容器侧壁与安瓿基座内壁有良好的热接触。可以理解,需要封闭公差确保容器与安瓿内壁均匀接触,容器单元的安装和取出过程可能分别需要加热和/或冷却基座和容器,以便容易安装。
载气进口20优选位于安瓿顶部18上,并与安瓿连接以将载气输送到安瓿。
多个垂直堆叠的容器22位于安瓿内室中。堆叠的容器彼此分开,并可从安瓿中取出,以便于清洗和再充填。内部载气组件23位于安瓿内,其与气体进口20连接(焊接),并将载气输送到内室底部和垂直堆叠的容器的最低容器下面。在图1中,内部载气组件23通过每个容器腔27(图3所示)和容器底部24。然而,应该理解为确保在内部载气组件与容器底部交叉的位置防漏密封,密封O-环38(如图5所示)可位于各容器之间,特别是在源材料是液体时。也可在每个容器(塔板)侧壁的上表面上提供外部o-环以在各容器间密封。
此外,如果使用固体前体,需要阻止载气流中夹带固体。高纯的不锈玻璃料(孔尺寸可能为1~100微米)可加到载气流中的任何位置。玻璃料可设置在每个突起物的“进口”,较大的圆盘玻璃料可加到上面塔板上,并通过在安瓿上安装的盖子产生的压力来密封,或加到出口气体通道上。
如图3所示,每个容器22包括底部24和侧壁26,从而形成容纳优选的源材料28的容器腔27。容器优选由非反应性的导热材料制成,例如银、银合金、铜、铜合金、铝、铝合金、铅、包镍、不锈钢、石墨和/或陶瓷材料。
每个容器还包括多个突起物30,其中每个突起物包括用以使载气通过突起物的通道32。突起物的形状可以是能够使气体容易流过其中的任何构形。优选地,突起物是如图3和图4所示的圆柱或圆锥形。
图4表明具有普通漏斗状构形的突起物30,其包括随着锥形突起物延伸进容器腔27而缩窄的圆锥形孔。这种圆锥形孔可使载气从相邻的低容器通过较大的孔开口34进入容器腔(较小孔36),同时减小载气回流进较低的相邻容器。重要的是,保持以多种半导体处理系统所需的流速单向流过堆叠的容器,可提高用蒸发的源材料饱和的载气的流动。随着含有蒸发的源材料的载气从安瓿底部向上流过锥形突起物,当气体分子压向突起物壁时,产生涡流作用。这种涡流作用使载气快速通过突起物,从而使蒸发的源材料与锥形突起物的加热的壁接触。因此,蒸发的源材料与加热的容器保持接触,并减小蒸发的材料的沉积和/或阻塞突起物中的通道。
可以延长突起物,使其与容器表面连接,如商业上可得到的通风不锈钢螺孔,这样可最优化处理或升华速率。可选择地,突起物形成作为容器底部的一部分,这样对突起物的热传递最大。优选地,每个突起物的高度约与容器侧壁相同高度或更小。更优选地,每个突起物的高度小于容器侧壁的高度,从而在突起物未端上方提供用于在各容器内气体分散和循环的顶部空间。可选择地,容器和突起物可在每个容器中形成流化床。载气流可以进入固体表面之下的容器,可以理解如图10所示每个容器中的孔尺寸足以容纳固体前体。另一个实施方案涉及如图9所示的突起物,其侧壁包括用以使载气通过固体前体的通风孔,用以将其流化。
突起物其高度应可提供容纳足量源材料的防漏区,而不论是液体或固体,从而提供所需的蒸发的材料,而不会通过突起物的开孔32泄漏进下面的容器。优选地,每个突起物从容器底部垂直延伸约0mm~约5mm,更优选约为1.5mm~3.0mm。
如图1所示,每个容器中突起物的配置与相邻容器中的突起物略微偏移,从而使载气在容器内循环,以在蒸发的源材料通过突起物被输送至下一级容器之前与其接触。有利的是,由于蒸发器系统中源材料的量得以提高,所以载气的多级接触使载气的饱和速率提高。
取决于输送至下流CVD装置或离子注入系统的蒸发的气体的量,蒸发器输送系统10的尺寸不同。蒸发器其尺寸通常与内径约为3~6英寸、优选约为3.75英寸的圆柱体相应。包括堆叠容器的容器数量由蒸发器尺寸来确定,优选在安瓿中带有3~5个容器。
根据源材料的种类和所供应的量、蒸发的气体的浓度及其他操作条件,本发明包括多个内部容器的安瓿可被加热并保持在所需的温度。可以使用环绕蒸发器的条带式加热器、具有包围蒸发器形状的块状加热器、或循环热空气、或液体加热介质进行加热。对加热方法没有特别限制,只要蒸发器能被加热并能精确地保持在所需的温度。需要从侧壁和底部加热安瓿,以减小较低容器在高温升华并形成冷却的顶部容器,而在冷却容器中可能冷凝引起阻塞。优选的热传递是从安瓿侧壁到容器侧壁。取决于加热方法、加热的载气进口管的长度及载气流速,也可能需要预加热载气。
有利的是,本发明的蒸发器输送系统可提供一系列加热的容器,其还提供用于提高加热的表面积的多个加热的突起物,从而由于热量分布被提高而使固体源材料升华。优选的是安瓿具有较大的热质,从而在处理过程中保持更均匀的温度。由于较大热质可使固体源材料保持从固体态至蒸气态的升华,所以本发明被设计成具有较大的热质。在给定温度下,固体的蒸气压是界面处的材料的分压,即在给定时间时,在固体表面冷凝的多个分子与从表面升华的分子数量相同。如果通过载气从固体/气体界面除去气态分子,那么平衡被破坏。如果在足够热量供应至固体表面以补充升华所需的潜在热量,那么升华以较高速率发生以恢复平衡。通过提供多个加热的突起物,全部导热的容器用作加热的表面,从而提高升华速率,使饱和载气的流速增加,并降低蒸发的源材料沉积而阻塞带通道的突起物。
取决于下流CVD装置或离子注入系统的操作条件、蒸气压和源材料的量,蒸发器的温度不同。温度通常约为40~300℃。
本发明的蒸发器输送系统还可以包括:用以供应载气和输送蒸发的气体并与蒸发器连接的管道;及用于测量压力和温度的调节阀。可以提供加热器以保持气体供应管道和将蒸发的材料输送至下流半导体制造处理室的管道中的温度。优选下流管道比安瓿热5-10℃,以防止在管道中冷凝。
本发明蒸发器系统的方法包括在安瓿内堆叠容器前将源材料加到容器中。源材料可以是固体、液体或溶解在溶剂中的固体。此外,可利用任何方法以薄膜形式将源材料涂覆在容器和容器腔内突起物的表面,包括通过加热熔融金属配合物、将熔融的金属配合物涂覆至支撑物上、然后冷却的方法。此外,金属配合物可被溶解在溶剂中,并涂覆到容器和突起物的表面,然后减压下除去溶剂。如果在下流处理系统中使用不同的源材料,那么本发明具有将不同源材料加到垂直堆叠的容器中的不同容器中的能力。
如图5所示,蒸发器单元44包括与内部气体输送组件23接触的多个垂直堆叠的容器,并置于安瓿中。安瓿顶部盖子18(如图1和图2所示)位于所示导热安瓿的顶部,并通过如o-环组件(o-环可由聚四氟乙烯、弹性体或金属密封件制成)和/或机械扣件如螺丝与其密封。安装加热安瓿的装置,提高安瓿和接触容器内的内温至足以蒸发所含的源材料的温度。由于纯载体进入塔板,而部分或完全饱和的载气进入其上的容器,所以在第一或最低容器上升华速率最大。同样,需要在底部容器上加载更多的前体和/或提高容器的高度尺寸,以使处理工具中的安瓿具有更均匀的表面积。
用作源材料的固体通过升华过程被蒸发,这通过加热导热安瓿的壁来实现,其优选与由导热材料制成的多个垂直堆叠的容器接触。升华过程使固体例如癸硼烷从固态转变到蒸气态而没有经过中间的液态。本发明对于适用的固体源材料是有效的,例如升华温度约为20℃~约300℃、蒸气压约为10-2~约103Torr的固体材料。
可通过设置可控制温度操作的任何热量调节系统来控制蒸发器内的温度,包括但不限于电热丝式加热器、辐射加热器、加热套、循环流体加热器、电阻加热系统、感应加热系统等。此外,可通过设置与导热安瓿和/或容器表面接触的热电偶、热敏电阻或任何其他适合的温度感测接头或装置来感测安瓿内的温度。
为在容器缺少源材料时进行测定,发明人设计了传感监测系统以测定顶部塔板和/或底部塔板中的固体或液体量,如在容器底部表面上与反射表面连接的光学传感器,从而当容器接近空或空的时信号发生变化。
图6表明用于将载气供应至蒸发器10的简化蒸发输送系统66。载气源64与蒸发器10连接,从而载气。在加入源材料的可选择的方式中,液体源材料可从液体源容器67加入。通过设置在载气输送管道和用于将蒸发的源材料输送到处理室70的管道中的流量计68可以监测和控制载气流速。气体输送管道优选由低摩擦系数的材料制成,如聚合物,从而具有较高流速。优选地,蒸发器输送系统由导热材料制成,从而输送与蒸发器单元10连接的至少一个加热装置72产生的热能。
完全蒸发所需的能量是源材料和载气、混合物流速的函数。在本发明中,输送至蒸发器的热能约为100W~3000W,从而提供最优化的等温温度。按这种方式,流动混合物吸收的热能是可用热能的一小部分。因此,气体蒸气所吸收的能量相对于可用的热能没有明显变化,从而使导热表面基本上保持在理想的等温温度。
操作时,前体源材料优选在干燥箱或手套箱中加到容器单元内,以避免当安瓿打开时前体与氧或水份反应。从气体源64来的载气被输送到蒸发器单元的气体进口20,气体流速约为1sccm~500sccm。以可使载气稳定流动的压力将载气输送到蒸发器中,然后载气通过垂直堆叠的容器的突起物。随着载气向上通过不同级的垂直堆叠的容器,载气被蒸发的源材料所饱和,并从蒸发器单元经气体出口阀40输送至处理室70。
结合下面的实施例可以更充分理解本发明的优点。
实施例I
如图1所示,本发明的蒸发器包括在本发明的安瓿内具有5个堆叠的容器的容器单元,测试来确定从安瓿到容器的热导效率。安瓿由高级不锈钢制成,并与环绕在安瓿外围的块状加热器连接。加热器与变压器连接,其是AC变压源,用以控制加热程度。位于安瓿内的各容器(容器1和容器5)与温度传感器连接,以测定加热均匀度及从安瓿到容器的热传递功效。安瓿与载气源连接,用于将载气以约500sccm的速率输送到安瓿并通过容器单元。如图7所示,随着与安瓿连接的加热器温度的提高,容器中感测的内温也提高,这反应出热导功效。将容器1和容器5中感测的温度与安瓿的温度相比,表明全部堆叠的容器中的加热均匀性。因此,各容器都可提供均匀加热以蒸发前体材料的额外表面积。
图8表明热量从安瓿到容器5中的突起物的分布。在蒸发1小时后,温度升至130℃,安瓿内的热量分布接近恒定。由于多个容器使容纳前体材料的面积增大,所以不需再充填安瓿就可制备更多的产物,从而降低了装置的不工作时间。
Claims (75)
1.一种蒸发器装置,其包括:
器皿,其具有第一端,位于第一端的气体进口,位于第一端的气体出口,围绕内部容积的器皿壁,和设置在内部容积内的多个纵向取向的传热元件;以及
设置在内部容积中的固态可蒸发材料,其具有松散、不连续和微粒的任意形状。
2.权利要求1的蒸发器装置,其进一步包括与器皿壁热相通的加热元件。
3.权利要求1的蒸发器装置,其中气体进口与第一气体源相通地连结,气体出口与适于利用蒸发态可蒸发材料的处理设备连结。
4.权利要求1的蒸发器装置,其中固态包括团聚粒子、粉末和结晶材料的任意。
5.权利要求1的蒸发器装置,其中多个传热元件适于与可蒸发材料接触并向可蒸发材料导热。
6.权利要求1的蒸发器装置,其中器皿壁包括具有第一高度的侧壁,多个传热元件具有第二高度,且第二高度与第一高度基本相同。
7.权利要求1的蒸发器装置,其中器皿壁包括具有第一高度的侧壁,多个传热元件具有第二高度,且第二高度低于第一高度或与第一高度基本相同。
8.权利要求1的蒸发器装置,其中器皿壁包括具有第一高度的侧壁,多个传热元件具有第二高度,且第二高度低于第一高度或与第一
9.权利要求1的蒸发器装置,其中器皿包括具有安瓿底部、侧壁和可拆卸的顶部的安瓿,且其中可拆卸的顶部沿第一端设置。
10.权利要求1的蒸发器装置,其中器皿包括至少一个设置在器皿内、进一步限定内部容积的容器,其中该至少一个容器包括容器底部和侧壁。
11.权利要求10的蒸发器装置,其中该至少一个容器包括位于器皿内的多个垂直堆叠的容器。
12.权利要求10的蒸发器装置,其中该至少一个容器包括导热材料,该至少一个容器的侧壁与器皿的侧壁部分接触。
13.权利要求1的蒸发器装置,其中该多个纵向取向的传热元件限定了多个气流通道。
14.权利要求1的蒸发器装置,其中该多个纵向取向的传热元件包括多个管道。
15.权利要求1的蒸发器装置,其中该器皿包括部分限定内部容积的支撑面,且该多个纵向取向的传热元件从该支撑面垂直延伸。
16.权利要求1的蒸发器装置,其中该器皿包括向下延伸入内部容积并与气体进口相通地连接的管道,且引入步骤包括使第一气体流过管道并将该第一气体排放入内部容积的下部中。
17.权利要求1的蒸发器装置,其中该可蒸发材料包括如下的至少一种:硼(B),磷(P),铜(Cu),镓(Ga),砷(As),钌(Ru),铟(In),锑(Sb),镧(La),钽(Ta),铱(Ir),癸硼烷(B10H14),四氯化铪(HfCl4),四氯化锆(ZrCl4),三氯化铟(InCl3),金属有机-二酮盐络合物,环戊二烯基环庚三烯基钛(CpTiChT),三氯化铝(AlCl3),碘化钛(TixIy),环辛四烯基环戊二烯基钛((Cot)(Cp)Ti),双环戊二烯基钛二叠氮化物,羰基钨(Wx(CO)y),双(环戊二烯基)钌(II)(Ru(Cp)2),和三氯化钌(RuCl3)。
18.权利要求1的蒸发器装置,其中可蒸发材料包括四氯化铪(HfCl4)。
19.权利要求1的蒸发器装置,其中器皿的第一端是其顶端且包括盖子,其中该盖子具有安装在其上并连结至气体进口的进口气流控制阀,且其中该盖子具有安装于其上并连结至气体出口的出口气流控制阀。
20.权利要求1的蒸发器装置,其中可蒸发材料包括结晶材料。
21.权利要求1的蒸发器装置,其中器皿包括一个或多个内表面,该内表面具有的总表面积大于器皿内部区域的底面的表面积。
22.权利要求1的蒸发器装置,其中器皿包括设置在器皿内不同水平处的多个表面。
23.权利要求1的蒸发器装置,其中器皿在其内限定了一个或多个加热材料的支撑面,该支撑面的总表面积大于器皿内部区域的加热底面的表面积。
24.权利要求1的蒸发器装置,其中纵向取向的传热元件包括导热材料。
25.权利要求1的蒸发器装置,其中器皿进一步包括一个或多个过滤器,用于防止第二气体中的固体材料被从器皿排出。
26.一种方法,其包括如下步骤:
提供器皿,该器皿具有第一端、位于第一端的气体进口、位于第一端的气体出口、围绕内部容积的器皿壁、和设置在内部容积中的多个纵向取向的传热元件,该器皿在内部容积中含有固态可蒸发材料,其具有松散、不连续和微粒的任意形状;
将器皿加热,从而使至少一部分该可蒸发材料蒸发;
将第一气体通过进口引入器皿中,从而与可蒸发材料接触并产生出包含蒸发的材料的第二气体;和
将包括蒸发的材料的第二气体通过出口递送至处理设备,
其中器皿壁具有被第一气体和第二气体中至少之一接触的内壁表面。
27.权利要求26的方法,其中固态包括团聚粒子、粉末和结晶材料的任意。
28.权利要求26的方法,其中该多个传热元件适于与可蒸发材料接触并向可蒸发材料导热。
29.权利要求26的方法,其中该器皿壁包括具有第一高度的侧壁,该多个传热元件具有第二高度,且第二高度与第一高度基本相同。
30.权利要求26的方法,其中器皿壁包括具有第一高度的侧壁,该多个传热元件具有第二高度,且第二高度低于第一高度或与第一高度基本相同。
31.权利要求26的方法,其中器皿包括具有安瓿底部、侧壁和可拆卸的顶部的安瓿,且其中可拆卸的顶部沿第一端设置。
32.权利要求26的方法,其中器皿包括至少一个设置在器皿内、进一步限定内部容积的容器,其中该至少一个容器包括容器底部和侧壁。
33.权利要求32的蒸发器单元,其中该至少一个容器包括位于器皿内的多个垂直堆叠的容器。
34.权利要求32的蒸发器单元,其中该至少一个容器包括导热材料,该至少一个容器的侧壁与器皿的侧壁部分接触。
35.权利要求26的方法,其中该多个纵向取向的传热元件限定了多个气流通道。
36.权利要求26的方法,其中该多个纵向取向的传热元件包括多个管道。
37.权利要求26的方法,其中该器皿包括部分限定内部容积的支撑面,且该多个纵向取向的传热元件从该支撑面垂直延伸。
38.权利要求26的方法,其中该器皿包括向下延伸入内部容积并与气体进口相通地连接的管道,且引入步骤包括使第一气体流过管道并将该第一气体排放入内部容积的下部中。
39.权利要求26的方法,其进一步包括使蒸发的材料与基底接触的步骤。
40.权利要求26的方法,其进一步包括采用沉积法将蒸发的材料进行沉积的步骤,该沉积法选自化学气相沉积、原子层沉积、等离子体增强原子层沉积、金属有机化学气相沉积、等离子体增强化学气相沉积和离子注入。
41.权利要求26的方法,其中该可蒸发材料包括如下的至少一种:硼(B),磷(P),铜(Cu),镓(Ga),砷(As),钌(Ru),铟(In),锑(Sb),镧(La),钽(Ta),铱(Ir),癸硼烷(B10H14),四氯化铪(HfCl4),四氯化锆(ZrCl4),三氯化铟(InCl3),金属有机-二酮盐络合物,环戊二烯基环庚三烯基钛(CpTiChT),三氯化铝(AlCl3),碘化钛(TixIy),环辛四烯基环戊二烯基钛((Cot)(Cp)Ti),双环戊二烯基钛二叠氮化物,羰基钨(Wx(CO)y),双(环戊二烯基)钌(II)(Ru(Cp)2),和三氯化钌(RuCl3)。
42.权利要求26的方法,其中可蒸发材料包括四氯化铪(HfCl4)。
43.权利要求26的方法,其包括以可蒸发材料使第一气体饱和的步骤。
44.权利要求26的方法,其进一步包括使第一气体与可蒸发材料化学反应的步骤。
45.权利要求26的方法,其中器皿的第一端是其顶端且包括盖子,其中该盖子具有安装在其上并连结至气体进口的进口气流控制阀,且其中该盖子具有安装于其上并连结至气体出口的出口气流控制阀。
46.权利要求26的方法,其中器皿包括一个或多个内表面,该内表面具有的总表面积大于器皿内部区域的底面的表面积。
47.权利要求26的方法,其中可蒸发材料包括结晶材料。
48.权利要求26的方法,其中器皿包括设置在器皿内不同水平处的多个表面。
49.权利要求26的方法,其中该内部结构在器皿内限定了一个或多个加热材料的支撑面,该支撑面的总表面积大于器皿内部区域的加热底面的表面积。
50.权利要求26的方法,其中该第一气体是载气。
51.权利要求26的方法,其中第一气体可与可蒸发材料反应。
52.权利要求26的方法,其进一步包括将半导体基底与蒸发的材料接触的步骤,从而形成处理后的半导体基底。
53.权利要求26的方法,其进一步包括将半导体基底与蒸发的材料接触的步骤,从而在半导体基底上形成膜。
54.权利要求53的方法,其进一步包括将包含该膜的半导体基底进行处理的步骤,从而形成半导体。
55.权利要求26的方法,其中纵向取向的传热元件包括导热材料。
56.权利要求26的方法,其中加热步骤包括采用100瓦特至3000瓦特的加热功率。
57.权利要求26的方法,其进一步包括在将第一气体递送至器皿之前,对第一气体进行预热的步骤。
58.权利要求26的方法,其进一步包括将可蒸发材料倾倒入器皿内的步骤。
59.权利要求26的方法,其中该器皿进一步包括一个或多个过滤器,用于防止第二气体中的固体材料被从器皿排出。
60.权利要求26的方法,其中该多个纵向取向的传热元件与器皿外的热源保持热相通。
61.一种方法,其包括如下步骤:
提供器皿,该器皿具有第一端、位于第一端的气体进口、位于第一端的气体出口、围绕内部容积的器皿壁、和设置在内部容积中的多个纵向取向的传热元件,该多个传热元件适于与设置在内部容积中的固态可蒸发材料接触并向其导热,该可蒸发材料具有松散、不连续和微粒的任意形状;
将器皿加热,从而使至少一部分该可蒸发材料蒸发;
将第一气体通过进口引入器皿中,从而与可蒸发材料接触并产生出包括蒸发的材料的第二气体;和
将包括蒸发的材料的第二气体通过出口递送至处理设备,
其中器皿壁具有被第一气体和第二气体中至少之一接触的内壁表面;和
其中器皿壁包括具有第一高度的侧壁,该多个传热元件具有第二高度,且第二高度低于第一高度或与第一高度基本相同。
62.权利要求61的方法,其中固态包括团聚粒子、粉末和结晶材料的至少一种。
63.权利要求61的方法,其中该器皿包括向下延伸入内部容积并与气体进口相通地连接的管道,且引入步骤包括使第一气体流过管道并将该第一气体排放入内部容积的下部中。
64.权利要求61的方法,其进一步包括采用沉积法将蒸发的材料进行沉积的步骤,该沉积法选自化学气相沉积、原子层沉积、等离子体增强原子层沉积、金属有机化学气相沉积、等离子体增强化学气相沉积和离子注入。
65.权利要求61的方法,其中该可蒸发材料包括如下的至少一种:硼(B),磷(P),铜(Cu),镓(Ga),砷(As),钌(Ru),铟(In),锑(Sb),镧(La),钽(Ta),铱(Ir),癸硼烷(B10H14),四氯化铪(HfCl4),四氯化锆(ZrCl4),三氯化铟(InCl3),金属有机-二酮盐络合物,环戊二烯基环庚三烯基钛(CpTiChT),三氯化铝(AlCl3),碘化钛(TixIy),环辛四烯基环戊二烯基钛((Cot)(Cp)Ti),双环戊二烯基钛二叠氮化物,羰基钨(Wx(CO)y),双(环戊二烯基)钌(II)(Ru(Cp)2),和三氯化钌(RuCl3)。
66.权利要求61的方法,其中该可蒸发材料包括四氯化铪(HfCl4)。
67.权利要求61的方法,其中器皿包括一个或多个内表面,该内表面具有的总表面积大于器皿内部区域的底面的表面积。
68.权利要求61的方法,其进一步包括将可蒸发材料倾倒入器皿内的步骤。
69.权利要求61的方法,其中该多个传热元件限定了多个气流通道。
70.权利要求61的方法,其中该多个传热元件包括多个管道。
71.权利要求61的方法,其中第二高度与第一高度基本相同。
72.权利要求61的方法,其中该多个传热元件与器皿外的热源保持热相通。
73.权利要求61的方法,其中该器皿进一步包括一个或多个过滤器,用于防止第二气体中的固体材料被从器皿排出。
74.权利要求61的方法,其进一步包括使半导体基底与蒸发的材料接触的步骤,从而在半导体基底上形成膜。
75.权利要求61的方法,其进一步包括对包括膜的半导体基底进行处理的步骤,从而形成半导体。
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2010
- 2010-11-05 US US12/940,969 patent/US8128073B2/en not_active Expired - Fee Related
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2012
- 2012-02-16 US US13/398,814 patent/US8444120B2/en not_active Expired - Lifetime
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2013
- 2013-04-13 US US13/862,412 patent/US9004462B2/en not_active Expired - Fee Related
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2014
- 2014-01-29 JP JP2014013897A patent/JP6230431B2/ja not_active Expired - Lifetime
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2015
- 2015-04-08 JP JP2015079307A patent/JP6293699B2/ja not_active Expired - Lifetime
- 2015-04-14 US US14/686,274 patent/US20150218696A1/en not_active Abandoned
- 2015-07-31 US US14/815,805 patent/US9469898B2/en not_active Expired - Lifetime
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2016
- 2016-01-26 JP JP2016011999A patent/JP6157025B2/ja not_active Expired - Lifetime
- 2016-10-17 US US15/295,662 patent/US10465286B2/en not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113897593A (zh) * | 2021-09-13 | 2022-01-07 | 浙江陶特容器科技股份有限公司 | 一种固态前驱体源存储升华器 |
CN113897593B (zh) * | 2021-09-13 | 2023-08-11 | 浙江陶特容器科技股份有限公司 | 一种固态前驱体源存储升华器 |
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