CN101064270B - 半导体器件的制造方法 - Google Patents

半导体器件的制造方法 Download PDF

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CN101064270B
CN101064270B CN2006101625941A CN200610162594A CN101064270B CN 101064270 B CN101064270 B CN 101064270B CN 2006101625941 A CN2006101625941 A CN 2006101625941A CN 200610162594 A CN200610162594 A CN 200610162594A CN 101064270 B CN101064270 B CN 101064270B
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semiconductor device
manufacture method
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CN101064270A (zh
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野间崇
筱木裕之
铃木彰
关嘉则
久原孝一
高尾幸弘
山田纮士
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Sanyo Electric Co Ltd
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Abstract

本发明提供提高具有球状导电端子的BGA型半导体器件成品率和可靠性的制造方法。该方法在形成了第一配线(3)的半导体晶片(1a)表面通过树脂(5a)粘接第一玻璃衬底(4)。在半导体晶片(1a)的背面通过树脂(5b)粘接第二玻璃衬底(6)。对第一玻璃衬底(4)的一部分进行刻蚀，形成V字形槽(VG)。之后，形成与第一配线(3)连接并在第二玻璃衬底(6)的表面上延伸的第二配线(8)。再通过喷涂在第二配线8上形成由有机树脂构成的保护膜(9)、以及形成用于在保护膜(9)上设置开口部(K)的抗蚀剂层R)。之后使用保护膜(9)作为焊料掩模、通过丝网印刷形成导电端子(10)。此外，也可以在第二玻璃衬底(6)上通过喷涂形成缓冲部件(7)。

Description

半导体器件的制造方法
本申请是三洋电机株式会社于2003年10月30日提交的名称为“半导体器件的制造方法”、申请号为200310115678.6的发明专利申请的分案申请。
技术领域
本发明涉及具有球状导电端子的BGA(球栅阵列)型的半导体器件的制造方法。
背景技术
近年来，作为三维安装技术、又名新的封装技术，CSP(芯片尺寸封装件)倍受瞩目。所谓的CSP是外形尺寸与半导体芯片大致相同的小型封装件。
作为一种现有的CSP，BGA型半导体器件是已知的。这种BGA型半导体器件在封装件的一个主表面上以格状设置由焊料等金属材料构成的多个球状导电端子，用电连接在封装件的另一面上安装的半导体芯片。
因此，当将这种BGA型半导体器件安装到电子设备中时，在印刷衬底上的配线图形上压接各个导电端子，并电连接半导体芯片和在印刷衬底上安装的外部电路。
这种BGA型半导体器件与具有向侧部突出的引线管脚的SOP(小外廓封装件)和QFP(方形扁平封装件)等其它CSP型半导体器件相比具有可设有多个导电端子、并且能小型化的优点。这种BGA型半导体器件具有例如作为在移动电话上承载的数字照相机图像传感器芯片的用途。
图11示出了现有BGA型半导体器件的示意构成图，其中图11(A)是这种BGA型半导体器件的表面侧的立体图。而图11(B)是这种BGA型半导体器件的背面侧的立体图。
这种BGA型半导体器件101中，在第一和第二玻璃衬底102和103之间通过插入环氧树脂105a、105b而封装半导体芯片104。在第二玻璃衬底103的一个主表面上，即BGA型半导体器件101的背面上按照格子状设置多个导电端子106。通过第二配线110这些导电端子106连接半导体芯片104。多个第二配线110分别与从半导体芯片104的内部引出的铝配线连接，实现了各个导电端子106与半导体芯片104的电连接。
下面参照图12更详细地说明这种BGA型半导体器件101的横截面结构。图12示出了沿着切割线切割成个个芯片的BGA型半导体器件101的截面图。
在半导体芯片104的表面上设置的绝缘膜108上设置第一配线107。这个半导体芯片104利用树脂105a与第一玻璃衬底102连接。而且，这个半导体芯片104的背面用树脂105b与第二玻璃衬底103连接。
然后，第一配线107的一端与第二配线110连接。该第二配线110从第一配线107的一端延伸到第二玻璃衬底103的表面上。而且，在第二玻璃衬底103上延伸的第二配线上形成球状导电端子106。
上述现有技术例如在以下专利文献中记载。
文献1：特许公报2002-512436号公报。
在上述BGA型半导体器件101中，在上述切割工序之前使用有机树脂，在有V字形槽VG的半导体器件表面上形成保护膜111(参照图13)。作为形成这种保护膜111的方法，采用在使半导体芯片104的背面侧向上，使热固化有机树脂从上方向滴下，使半导体晶片本身旋转，从而利用离心力在第二配线110的表面上形成保护膜111。
但是，如图13(A)所示，这种方法在切割线(图中虚线)的V字形槽VG的底部积存不必要厚度的该热固化有机树脂。这是因为有机树脂具有粘性膏的性质。为此，当对保护膜111进行加热处理然后热固化时，在V字形槽VG上积存的有机树脂比覆盖半导体器件101的其它部分的有机树脂收缩得更大。结果是，产生比V字形槽VG更大的收缩，半导体晶片存在弯曲的问题(产生向图13(B)的箭头所示方向的弯曲)。
具有这种弯曲的半导体晶片将妨碍后面的制造工序。特别是在使用掩蔽上述保护膜111的网目印刷形成导电端子106的工序，与印刷位置吻合的精度差，产生BGA型半导体器件101的成品率和可靠性等问题。
发明内容
本发明是鉴于上述缺陷的设计，消除了在BGA型半导体器件101的制造工序中产生的半导体晶片弯曲，提高了半导体器件的可靠性。
本发明的半导体器件的制造方法，其特征在于，包括以下工序：在形成第一配线的半导体晶片表面侧贴合支撑衬底的工序；通过进行从所述半导体晶片背面的蚀刻而形成槽，并部分露出所述第一配线的工序；连接所述第一配线的露出部分，在所述半导体晶片的背面侧形成延伸的第二配线的工序；在所述第二配线上通过喷涂形成保护膜的工序。
本发明的另一个半导体器件的制造方法，其特征在于，包括以下工序：在表面侧准备形成第一配线的半导体晶片，通过进行从所述半导体的背面的蚀刻而形成槽，并部分露出所述第一配线的工序；连接所述第一配线的露出部分，在所述半导体晶片的背面侧形成延伸的第二配线的工序；在所述第二配线上通过喷涂形成保护膜的工序。
本发明通过喷涂形成了用于吸收施加在导电端子上的力的缓冲部件或保护膜，或者在保护膜上设置开口部的抗蚀剂层，因此该膜厚度均匀，可防止半导体晶片弯曲。这样，在之后进行的网目印刷中，与形成导电端子的位置的吻合精度高，可提高BGA型半导体器件的成品率和可靠性。
按照本发明，在形成缓冲部件或保护膜或抗蚀剂层的各层时，由于使用将成膜材料以雾状颗粒喷出的喷涂法，因此上述各层形成均匀的厚度。在焙烧保护膜和抗蚀剂层时，由于抑制了保护膜和抗蚀剂层局部的大收缩，可以防止半导体晶片弯曲。由此，采用网目印刷，提高了成为半导体晶片平坦性的问题的工艺的精度，并提高了BGA型半导体器件的成品率和可靠性等。
附图说明
图1是表示根据本发明实施例的半导体器件的制造方法的剖视图；
图2是表示根据本发明实施例的半导体器件的制造方法的剖视图；
图3是表示根据本发明实施例的半导体器件的制造方法的剖视图；
图4A、4B是表示根据本发明实施例的半导体器件的制造方法的剖视图；
图5是表示根据本发明实施例的半导体器件的制造方法的剖视图；
图6是表示根据本发明实施例的半导体器件的制造方法的剖视图；
图7是表示根据本发明实施例的半导体器件的制造方法的剖视图；
图8是表示根据本发明实施例的半导体器件的制造方法的剖视图；
图9是表示根据本发明实施例的半导体器件的制造方法的剖视图；
图10A、10B是表示根据本发明实施例的半导体器件的制造方法的剖视图；
图11A、11B是表示现有技术的半导体器件的制造方法的立体图；
图12是表示现有技术的半导体器件的制造方法的剖视图；
图13A、13B是表示现有技术的半导体器件的制造方法的剖视图。
具体实施方式
下面参照附图介绍有关实施本发明的最佳形式(以下简称为实施例)的半导体器件的制造方法。图1到6是说明有关本实施例的半导体器件的制造方法的剖视图。
首先，如图1所示，制备具有多个半导体芯片1的半导体晶片1a。这些半导体芯片1，例如是CCD的图像传感器用芯片，是通过半导体的晶片加工形成的。在半导体晶片1a上形成绝缘膜2，利用溅射法在这个绝缘膜上形成约1μm厚的以铝或铜为主要成分的一对第一配线3。
一对第一配线3相对地形成在每个用于切断半导体芯片1的边界线S(称为切割线或划线)的两侧。此外，也可以以跨过边界线S方式形成第一配线3后再进行形成一对第一配线3的切断。
在此，一对第一配线3成为从半导体芯片1的键合焊盘扩张到边界线S的焊盘。即是，一对第一配线3成为外部连接焊盘，并电连接半导体芯片1的图中未示出的电路。
然后，如图2所示，在形成了第一配线3的半导体晶片1a的表面上，用由透明环氧树脂材料形成的树脂5a作为粘合剂粘接膜厚约为200μm的第一玻璃衬底4。之后，反向研磨半导体晶片1a直到芯片厚度约为100μm之后，从这个背面一侧沿着边界线S对该半导体晶片1a进行干刻蚀，露出绝缘膜2。通过这个干刻蚀，将半导体晶片1a分成多个半导体芯片1，这些半导体芯片1由作为支撑衬底的第一玻璃衬底4支撑，并整体上呈现一个半导体晶片1a的形式。
然后，如图3所示，使用作为粘接剂的树脂5b在半导体芯片1的背面侧粘接厚度约为100μm并作为支撑衬底的第二玻璃衬底6。
然后，如图4(A)所示，最好在第二玻璃衬底6的平坦部的规定位置形成由具有柔软性感光有机膜形成的缓冲部件7。这个缓冲部件7可以吸收对下述导电端子10施加的力，可以防止玻璃衬底破裂等。另外，上述缓冲部件7也可以由感光有机膜以外的具有柔软性的材料构成。
这个缓冲部件7是使用如下方法在第二玻璃衬底6的表面上形成的(以下简称为“喷涂”)：通过图中未示出的喷涂法向第二玻璃衬底6的表面喷射成膜材料(例如液体状感光性有机膜材料)，进行涂覆。
在此，上述喷涂如下进行：例如对液体状感光性有机膜材料施加压力，从细喷嘴向第二玻璃衬底6的表面上喷射所述材料，使感光性有机膜材料形成雾状微粒。如果制备与喷涂相关的结构，可以利用手动控制或自动控制。
然后，在第二玻璃衬底6上除去已经形成均匀厚度的缓冲部件7的不要的部分(上述规定位置以外的部位)。
如果使用这种喷涂，缓冲部件7可形成均匀厚度。因此，在缓冲部件7的上方形成下述导电端子10时，在规定形成位置以及高度形成导电端子10。因此，可以使施加于导电端子10的力均匀，并可防止由应力引起的玻璃衬底破裂或变形等。
之后，从半导体芯片1的背面沿着边界线S进行开槽。这个开槽工序是从半导体芯片1的背面侧使用锯状等工具例如刀片进行切削处理。因此，这个开槽工序从第二玻璃衬底6到第一玻璃衬底4进行到切割第一玻璃衬底4的一部分，在开槽表面上露出第一配线3的侧端部。通过这个开槽，沿着边界线S形成了V字形槽VG。此时，由于通过该开槽存在该露出面被污染的情况，所以根据需要通过干刻蚀等清洗露出面。
在上述实施例，由喷涂形成缓冲部件后，还有开槽工序。但也不限于此，也可以在开槽工序后由喷涂形成缓冲部件。
此时，除具有可以将上述缓冲部件形成均一厚度的效果，还由于缓冲部件7含有V字型的槽VG形成为均一的厚度，在V字型的槽VG不能厚厚地滞留，所以可将感光性有机膜材料的使用量控制在很少的程度。另外，由于如上所述地感光性有机膜材料不能在V字型槽VG厚厚地滞留而形成为均一的厚度，所以使半导体晶片1a不产生弯曲。
然后，如图4(B)所示，形成膜厚约为3μm的以铝或铜作为主体的金属层，以便覆盖前述第二玻璃衬底6以及通过开槽形成的V字形槽VG。之后，利用规定的配线图形对金属层进行构图，形成电连接露出第一配线3的侧端部的第二配线8。形成该第二配线8之后，在这个表面上形成图中未示出的Ni(镍)、Au(金)的镀层。该第二配线8在半导体芯片1的背面的第二玻璃衬底6的表面上延伸。在第二玻璃衬底6的表面上延伸的第二配线8上形成下述导电端子10。
之后，如图5所示，在第二配线8上形成保护膜9。保护膜9在后面的网目印刷工序中用作掩蔽焊料。这个保护膜9通过图中未示出的喷涂，在该图中的箭头方向，即向形成第二配线8的表面上喷涂例如环氧树脂类的有机树脂，从而形成在第二配线8的表面上。
在此，上述喷涂如下进行：例如对液体状有机树脂施加压力，从细喷嘴向形成了第二配线8的表面上喷射所述液体状材料，使有机树脂形成雾状颗粒。如果制备与喷涂有关结构可以利用手动控制或自动控制。
由于使用该喷涂，保护膜9形成了包含V字形槽VG的均匀厚度，不会在V字形槽VG上积存厚的保护膜，所以可将有机树脂的使用量抑制到极少量。
在有机树脂是热固性树脂的情况下，喷涂保护膜9之后，在设定温度下加热进行焙烧，使保护膜9热固化。这时，由于不会在V字形槽VG上积存厚的保护膜9，形成均匀的厚度，所以不会像现有技术那样使半导体晶片1a发生弯曲。而且，该保护膜9也可以用抗蚀材料形成。
然后，在第二玻璃衬底6上方的设定保护膜9的位置上，为了形成下述导电端子10，形成露出第二配线8的开口部K。在具有缓冲部件7的情况下，该开口部K形成在与缓冲部件7相对应的位置上。开口部K是使用抗蚀剂层R形成的，如下所示。
如图6所示，在该图中箭头所示方向，即向形成了保护膜9的表面上喷射例如液体状抗蚀材料，在保护膜9的表面上形成抗蚀剂层R。利用喷涂形成抗蚀剂层R是利用图中未示出的喷涂进行的。
这里，上述喷涂是如此进行：对例如液体状抗蚀材料施加压力，从细喷嘴向保护膜9上喷射，形成雾状的抗蚀材料颗粒。如果制备与喷涂有关部件可以通过手动控制或自动控制。
由于该喷涂，抗蚀剂层R形成为包括V字形槽VG的均匀厚度，不会在V字形槽VG上积存厚的保护膜，所以可使抗蚀材料的使用量抑制到极少量。
此外，在抗蚀材料为热固化树脂的情况下，喷涂抗蚀剂层R之后，在设定温度加热进行焙烧，使抗蚀剂层R热固化。此时，不会在V字形槽VG上积存厚的抗蚀剂层R，而是形成均匀厚度，所以不会像现有技术那样发生半导体晶片1a弯曲的问题。
然后，如图7所示，在抗蚀剂层R中，使用图中未示出的掩模通过曝光和显影除去对应缓冲部件7的部分。之后，如图8所示，用除去上述部分的抗蚀剂层R作掩摸，通过刻蚀等除去露出第二配线8的保护膜9的一部分，形成开口部K。之后，如图9中所示除去所有的抗蚀剂层R。
随后，如图10(A)所示，用有开口部K的保护膜9作掩模，进行网目印刷，在该开口部K露出的第二配线8上形成由焊锡等金属形成的导电端子10。在有缓冲部件7的情况下，导电端子10设置在对应缓冲部件7的位置上。
此时，与现有技术相比，由于抑制了半导体晶片1a弯曲，所以可以高精度地进行网目印刷。即，通过网目印刷，可以提高存在半导体晶片平坦性问题的工序的精度，提高了BGA型半导体器件的成品率和可靠性。
然后，进行此后的重复工序。由此，导电端子10成为球状。
然后，如图10(B)所示，沿着边界线S进行切割，分割成多个半导体芯片1。这样，就完成了BGA型半导体器件。
在上述实施例中，为了形成开口部K，通过喷涂在保护膜9上形成抗蚀剂层R，但本发明不限于此。即是，在构图时可使用抗蚀剂层作为掩模部件的各个工序中，都可以使用喷涂形成抗蚀剂层。
在上述实施例中，为了保证可靠性，在第一半导体晶片1a上粘接第一玻璃衬底4、第二玻璃衬底6，但是为了使工序简略，也可以省略第二玻璃衬底6。这种情况下，在图2的工序中，反向研磨之后，从这个背面侧沿着边界线S对半导体晶片1a进行刻蚀形成槽，露出第一配线3。这个该刻蚀形成抗蚀剂层，而这个抗蚀剂层是通过喷涂向半导体晶片1a的背面上涂覆抗蚀材料形成的。
然后，在芯片背面上形成缓冲部件7的情况下，通过喷涂在半导体晶片1a的背面上形成缓冲部件7。此外，在半导体晶片1a(半导体芯片1)的背面上形成第二配线8，之后通过喷涂在第二配线8上形成保护膜9。
此外，在上述实施例中，本发明适用于在半导体芯片的背面上有导电端子的BGA型半导体器件，但是本发明不限于此，在半导体芯片的背面上没有导电端子的LGA(Land Grid Array)型半导体器件也适用于本发明。即是，也可以构成在第二配线8的表面上形成保护膜9，在这个保护膜9的开口部K上没有形成导电端子10形式的半导体器件。

Claims (7)

1.一种半导体器件的制造方法，其特征在于，包括以下工序：
在形成第一配线的半导体晶片表面侧贴合支撑衬底的工序；
通过进行从所述半导体晶片背面的蚀刻而形成槽，并部分露出所述第一配线的工序；
连接所述第一配线的露出部分，在所述半导体晶片的背面侧形成延伸的第二配线的工序；
在所述第二配线上通过将成膜材料以雾状颗粒喷出而进行涂覆的喷涂法形成保护膜的工序。
2.根据权利要求1的半导体器件的制造方法，其特征在于，所述保护膜由有机树脂构成。
3.根据权利要求2的半导体器件的制造方法，其特征在于，所述有机树脂是抗蚀树脂或环氧树脂。
4.根据权利要求2的半导体器件的制造方法，其特征在于，所述有机树脂具有热固性。
5.根据权利要求1的半导体器件的制造方法，其特征在于，在半导体器件的制造工序中，以在所述槽内的用于形成所述第二配线的金属层上以及所述保护膜上涂覆的抗蚀层作为构图时的掩模材料时，通过喷涂雾状微粒来涂覆该抗蚀层。
6.根据权利要求1的半导体器件的制造方法，其特征在于，在所述半导体晶片的表面侧贴合支撑衬底的工序是采用粘接剂进行贴合。
7.根据权利要求1的半导体器件的制造方法，其特征在于，通过沿着所述槽的中心部切割所述半导体晶片，而分割各个半导体芯片。
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EP1416529B8 (en) 2008-10-29
EP1416529B1 (en) 2008-07-02

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