CN101088153A - 将电路转移到接地层的方法 - Google Patents
将电路转移到接地层的方法 Download PDFInfo
- Publication number
- CN101088153A CN101088153A CNA2005800443969A CN200580044396A CN101088153A CN 101088153 A CN101088153 A CN 101088153A CN A2005800443969 A CNA2005800443969 A CN A2005800443969A CN 200580044396 A CN200580044396 A CN 200580044396A CN 101088153 A CN101088153 A CN 101088153A
- Authority
- CN
- China
- Prior art keywords
- layer
- substrate
- semiconductor
- ground plane
- buried
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76256—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques using silicon etch back techniques, e.g. BESOI, ELTRAN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0453229A FR2880189B1 (fr) | 2004-12-24 | 2004-12-24 | Procede de report d'un circuit sur un plan de masse |
FR0453229 | 2004-12-24 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101088153A true CN101088153A (zh) | 2007-12-12 |
CN100543962C CN100543962C (zh) | 2009-09-23 |
Family
ID=34954819
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005800443969A Active CN100543962C (zh) | 2004-12-24 | 2005-12-22 | 将电路转移到接地层的方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8298915B2 (zh) |
EP (1) | EP1829100A1 (zh) |
JP (1) | JP2008526009A (zh) |
KR (1) | KR20070086316A (zh) |
CN (1) | CN100543962C (zh) |
FR (1) | FR2880189B1 (zh) |
WO (1) | WO2006070167A1 (zh) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2871291B1 (fr) * | 2004-06-02 | 2006-12-08 | Tracit Technologies | Procede de transfert de plaques |
US7927975B2 (en) | 2009-02-04 | 2011-04-19 | Micron Technology, Inc. | Semiconductor material manufacture |
US8481406B2 (en) | 2010-07-15 | 2013-07-09 | Soitec | Methods of forming bonded semiconductor structures |
FR2963159B1 (fr) * | 2010-07-21 | 2018-01-19 | Soitec | Procedes de formation de structures semi-conductrices liees, et structures semi-conductrices formees par ces procedes |
JP5847566B2 (ja) * | 2011-01-14 | 2016-01-27 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム |
US8906779B2 (en) * | 2012-03-30 | 2014-12-09 | International Business Machines Corporation | Solar-powered energy-autonomous silicon-on-insulator device |
US8530337B1 (en) * | 2012-06-22 | 2013-09-10 | International Business Machines Corporation | Method of large-area circuit layout recognition |
CN104507853B (zh) | 2012-07-31 | 2016-11-23 | 索泰克公司 | 形成半导体设备的方法 |
WO2014177612A1 (en) * | 2013-04-30 | 2014-11-06 | Abb Technology Ag | Method for manufacturing a semiconductor device comprising a thin semiconductor wafer |
FR3049761B1 (fr) * | 2016-03-31 | 2018-10-05 | Soitec | Procede de fabrication d'une structure pour former un circuit integre monolithique tridimensionnel |
FR3062238A1 (fr) | 2017-01-26 | 2018-07-27 | Soitec | Support pour une structure semi-conductrice |
Family Cites Families (42)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3922705A (en) * | 1973-06-04 | 1975-11-25 | Gen Electric | Dielectrically isolated integral silicon diaphram or other semiconductor product |
US5849627A (en) * | 1990-02-07 | 1998-12-15 | Harris Corporation | Bonded wafer processing with oxidative bonding |
US5034343A (en) * | 1990-03-08 | 1991-07-23 | Harris Corporation | Manufacturing ultra-thin wafer using a handle wafer |
JP2621642B2 (ja) | 1990-11-13 | 1997-06-18 | 日本電気株式会社 | 半導体装置およびその製造方法 |
US6627953B1 (en) * | 1990-12-31 | 2003-09-30 | Kopin Corporation | High density electronic circuit modules |
JP3191972B2 (ja) * | 1992-01-31 | 2001-07-23 | キヤノン株式会社 | 半導体基板の作製方法及び半導体基板 |
US5276338A (en) * | 1992-05-15 | 1994-01-04 | International Business Machines Corporation | Bonded wafer structure having a buried insulation layer |
US5436173A (en) * | 1993-01-04 | 1995-07-25 | Texas Instruments Incorporated | Method for forming a semiconductor on insulator device |
US5455202A (en) * | 1993-01-19 | 1995-10-03 | Hughes Aircraft Company | Method of making a microelectric device using an alternate substrate |
US5591678A (en) * | 1993-01-19 | 1997-01-07 | He Holdings, Inc. | Process of manufacturing a microelectric device using a removable support substrate and etch-stop |
US5426072A (en) * | 1993-01-21 | 1995-06-20 | Hughes Aircraft Company | Process of manufacturing a three dimensional integrated circuit from stacked SOI wafers using a temporary silicon substrate |
US5391257A (en) * | 1993-12-10 | 1995-02-21 | Rockwell International Corporation | Method of transferring a thin film to an alternate substrate |
JP3435930B2 (ja) * | 1995-09-28 | 2003-08-11 | 株式会社デンソー | 半導体装置及びその製造方法 |
SG67458A1 (en) * | 1996-12-18 | 1999-09-21 | Canon Kk | Process for producing semiconductor article |
US6551857B2 (en) * | 1997-04-04 | 2003-04-22 | Elm Technology Corporation | Three dimensional structure integrated circuits |
US6191007B1 (en) * | 1997-04-28 | 2001-02-20 | Denso Corporation | Method for manufacturing a semiconductor substrate |
FR2767604B1 (fr) * | 1997-08-19 | 2000-12-01 | Commissariat Energie Atomique | Procede de traitement pour le collage moleculaire et le decollage de deux structures |
JPH11195712A (ja) | 1997-11-05 | 1999-07-21 | Denso Corp | 半導体装置およびその製造方法 |
US20020089016A1 (en) * | 1998-07-10 | 2002-07-11 | Jean-Pierre Joly | Thin layer semi-conductor structure comprising a heat distribution layer |
FR2795866B1 (fr) * | 1999-06-30 | 2001-08-17 | Commissariat Energie Atomique | Procede de realisation d'une membrane mince et structure a membrane ainsi obtenue |
US6482725B1 (en) * | 1999-08-18 | 2002-11-19 | Advanced Micro Devices, Inc. | Gate formation method for reduced poly-depletion and boron penetration |
AU2001254866A1 (en) | 2000-04-14 | 2001-10-30 | S.O.I.Tec Silicon On Insulator Technologies | Method for cutting out at least a thin layer in a substrate or ingot, in particular made of semiconductor material(s) |
FR2809867B1 (fr) * | 2000-05-30 | 2003-10-24 | Commissariat Energie Atomique | Substrat fragilise et procede de fabrication d'un tel substrat |
US6890835B1 (en) | 2000-10-19 | 2005-05-10 | International Business Machines Corporation | Layer transfer of low defect SiGe using an etch-back process |
FR2840731B3 (fr) * | 2002-06-11 | 2004-07-30 | Soitec Silicon On Insulator | Procede de fabrication d'un substrat comportant une couche utile en materiau semi-conducteur monocristallin de proprietes ameliorees |
FR2817395B1 (fr) * | 2000-11-27 | 2003-10-31 | Soitec Silicon On Insulator | Procede de fabrication d'un substrat notamment pour l'optique, l'electronique ou l'optoelectronique et substrat obtenu par ce procede |
FR2823596B1 (fr) * | 2001-04-13 | 2004-08-20 | Commissariat Energie Atomique | Substrat ou structure demontable et procede de realisation |
FR2823599B1 (fr) * | 2001-04-13 | 2004-12-17 | Commissariat Energie Atomique | Substrat demomtable a tenue mecanique controlee et procede de realisation |
US6759282B2 (en) * | 2001-06-12 | 2004-07-06 | International Business Machines Corporation | Method and structure for buried circuits and devices |
US6531753B1 (en) | 2001-06-18 | 2003-03-11 | Advanced Micro Devices, Inc. | Embedded conductor for SOI devices using a buried conductive layer/conductive plug combination |
FR2830125B1 (fr) * | 2001-09-24 | 2006-11-17 | Commissariat Energie Atomique | Procede de realisation d'une prise de contact en face arriere d'un composant a substrats empiles et composant equipe d'une telle prise de contact |
FR2844634B1 (fr) * | 2002-09-18 | 2005-05-27 | Soitec Silicon On Insulator | Formation d'une couche utile relaxee a partir d'une plaquette sans couche tampon |
EP1583148A4 (en) * | 2003-01-08 | 2007-06-27 | Semiconductor Energy Lab | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME |
US7436050B2 (en) * | 2003-01-22 | 2008-10-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having a flexible printed circuit |
US6911375B2 (en) * | 2003-06-02 | 2005-06-28 | International Business Machines Corporation | Method of fabricating silicon devices on sapphire with wafer bonding at low temperature |
FR2864336B1 (fr) * | 2003-12-23 | 2006-04-28 | Commissariat Energie Atomique | Procede de scellement de deux plaques avec formation d'un contact ohmique entre celles-ci |
FR2871291B1 (fr) * | 2004-06-02 | 2006-12-08 | Tracit Technologies | Procede de transfert de plaques |
FR2872625B1 (fr) * | 2004-06-30 | 2006-09-22 | Commissariat Energie Atomique | Assemblage par adhesion moleculaire de deux substrats, l'un au moins supportant un film conducteur electrique |
US7326629B2 (en) * | 2004-09-10 | 2008-02-05 | Agency For Science, Technology And Research | Method of stacking thin substrates by transfer bonding |
US7504277B2 (en) * | 2005-10-12 | 2009-03-17 | Raytheon Company | Method for fabricating a high performance PIN focal plane structure using three handle wafers |
JP4177876B2 (ja) | 2007-06-11 | 2008-11-05 | 株式会社東芝 | 光ディスクと記録方法と再生方法と再生装置 |
FR2926747B1 (fr) * | 2008-01-25 | 2011-01-14 | Commissariat Energie Atomique | Objet comportant un element graphique reporte sur un support et procede de realisation d'un tel objet. |
-
2004
- 2004-12-24 FR FR0453229A patent/FR2880189B1/fr active Active
-
2005
- 2005-12-22 US US11/793,863 patent/US8298915B2/en active Active
- 2005-12-22 JP JP2007547604A patent/JP2008526009A/ja active Pending
- 2005-12-22 CN CNB2005800443969A patent/CN100543962C/zh active Active
- 2005-12-22 KR KR1020077013647A patent/KR20070086316A/ko active Search and Examination
- 2005-12-22 WO PCT/FR2005/051139 patent/WO2006070167A1/fr active Application Filing
- 2005-12-22 EP EP05848368A patent/EP1829100A1/fr not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
JP2008526009A (ja) | 2008-07-17 |
EP1829100A1 (fr) | 2007-09-05 |
US8298915B2 (en) | 2012-10-30 |
FR2880189A1 (fr) | 2006-06-30 |
US20080128868A1 (en) | 2008-06-05 |
CN100543962C (zh) | 2009-09-23 |
KR20070086316A (ko) | 2007-08-27 |
WO2006070167A1 (fr) | 2006-07-06 |
FR2880189B1 (fr) | 2007-03-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN100543962C (zh) | 将电路转移到接地层的方法 | |
US8044465B2 (en) | Method for producing partial SOI structures comprising zones connecting a superficial layer and a substrate | |
US20090233079A1 (en) | Techniques for Layer Transfer Processing | |
US7645701B2 (en) | Silicon-on-insulator structures for through via in silicon carriers | |
CN1327505C (zh) | 制造含有粘接到目标基片上的薄层的叠置结构的方法 | |
CN102341900B (zh) | 制造热膨胀系数局部适应的异质结构的方法 | |
CN102214624B (zh) | 一种具有通孔的半导体结构及其制造方法 | |
KR101148050B1 (ko) | 플레이트들의 전달 방법 | |
JP4631113B2 (ja) | 半導体装置の製造方法 | |
CN104507854A (zh) | 形成基板同侧包括mems设备及集成电路的半导体结构的方法以及相关结构和设备 | |
KR19990071551A (ko) | 수직으로 집적된 반도체 소자 및 제조 방법 | |
JPH10233351A (ja) | 半導体基板の構造および製造方法 | |
CN104507853A (zh) | 形成基板两侧包括mems设备及集成电路的半导体结构的方法以及相关结构和设备 | |
KR100662694B1 (ko) | 열 분산층을 포함하는 박막 반도체 구조 | |
CN116072547A (zh) | 一种半导体结构及其形成方法、晶圆键合方法 | |
CN102742004A (zh) | 键合半导体结构及其形成方法 | |
JP2023112087A (ja) | 高抵抗率層を含む半導体構造を製作するための方法、および関連する半導体構造 | |
CN109830484B (zh) | 一种soi结构及其制作工艺 | |
US20140240944A1 (en) | Insulating low signal loss substrate, integrated circuits including a non-silicon substrate and methods of manufacture of integrated circuits | |
CN107369649B (zh) | 一种半导体器件及其制造方法 | |
JPH11219955A (ja) | 誘電率の小さな埋め込まれた誘電体をダマシーン処理工程の中に組み込む方法とその構造体 | |
EP1755164A2 (fr) | Procédé d'assemblage de composants passifs et de composants actifs et circuit intégré correspondant | |
KR20230074056A (ko) | 단결정 박막의 전사방법 및 이를 이용한 반도체 소자의 제조방법 | |
CN115548117A (zh) | 半导体结构及其制造方法 | |
CN110491851A (zh) | 第一晶圆及其形成方法、晶圆堆叠结构 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: S.O.I. TEKER ISOLATOR SILICON TECHNOLOGY Free format text: FORMER OWNER: TRACIT TECHNOLOGIES Effective date: 20100728 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: MOIRANS, FRANCE TO: BONIEN, FRANCE |
|
TR01 | Transfer of patent right |
Effective date of registration: 20100728 Address after: French Buryn Patentee after: S.O.I. Teker Isolator Silicon Technology Address before: French moirans Patentee before: Tracit Technologies |