CN101147302A - 通过注塑成型制造存储卡的方法 - Google Patents
通过注塑成型制造存储卡的方法 Download PDFInfo
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Abstract
本发明涉及一种制造存储卡或类似设备的方法,通过注塑成型制造包含集成电路和其它电子元件的存储卡(10)。如聚碳酸酯、合成纸、PVC或类似材料的外表面用于在注塑成型步骤之前盖住存储卡(10)或类似设备。在使用热固材料注塑成型之后,将存储卡(10)从两个半模中移出并进行修剪。
Description
背景技术
近年来,消费电子设备如数码相机、个人数字助理(PDA)、灵巧电话、和数字音频视频记录器已经推动了对可移动数据存储元件的强大市场需求。电子产业对此需求的回应是公知为“存储卡”的产品。存储卡通常在具有允许其与各制造商的不同设备进行连接的尺寸的工业标准外壳内包含一个或多个半导体存储芯片。存储卡通常还在外表面上具有连接端以与消费电子设备的电路进行电气连接。存储卡的类型示例包括PC卡、多媒体卡、紧凑式闪存卡、和安全数字卡。这些设备符合由行业协会比如个人计算机存储卡国际协会(“PCMCIA”)和多媒体卡协会(“MMCA”)发布的标准。
一个示例性存储卡即多媒体卡(“MMC”)10分别在图1至图3的顶视图、剖面侧视图、和底视图中进行说明。所示的MMC具有32mm长、24mm宽、1.4mm厚的标准尺寸,并且通常包含具有2至256兆字节(“MB”)的存储容量,通过位于使用如标准串口接口(“SPI”)的MMC底表面上的7个触点11来对其进行存取。位于MMC角上的简单切角12可以防止把MMC不正确地插入主设备的连接端。
在图1至图3中示出的示例现有技术MMC包括矩形基片13比如印刷电路板,以及一个或多个半导体存储晶粒(die)14或“芯片”,其分别使用如粘合层15或传统的丝焊16来安装并电气连接到基片13上。表面贴装的无源元件如电阻也可以安装并连接到基片13上。触点11通过基片13连接到由前述元件定义的存储电路上,用作卡10的输入输出端。
当各元件已经安装并连接到基片13上,现有技术方法包括对芯片14通过“团块封顶(glob-topping)”处理进行保护性封装的步骤。此步骤是必需的,因为在后面的阶段中将出现热固材料的高压高温注塑。高压注塑和高温会损伤微芯片以及其它小型电子元件,尤其会破坏丝焊。在所述的团块封顶步骤中,将一团粘稠的密封剂置于芯片的顶表面上并且允许其流过芯片侧面到达基片的表面。所述密封剂凝固,从而在芯片上形成保护性包壳18。通过把基片13组件的顶表面嵌入外壳19中包含的粘合剂床内来把薄片金属或塑料的外部覆盖物或外壳19(由图1中的点轮廓线示出)安装在基片13组件之上。
用于制造存储卡的现有技术方法在很大程度上与在存储卡内对电子元件、模块或组件进行适当地安置和固定相关。此种相关由下述事实导致:如果电子元件没有被适当地固定,则在把热固材料注入卡成型腔期间它们将会移至随机位置。这在现有技术处理中是个突出的问题,因为注塑受到相当高的压力的影响。制造存储卡的现有方法包括对相对较大的、机械夹持装置的使用,其具有坚硬、清晰的主体,用于在热固材料的注塑期间保持电子元件的位置。使用这类夹持装置会限制电子元件在存储卡中的定位可选度。定位限制还会压缩能够置于此类存储卡中的电子元件的大小和数量。这种限制还会限制能够置入MMC中的存储器的数量。
另外,由于用于制造这些相对较大的夹持装置的材料的膨胀系数一相对于此类卡中其它元件的膨胀系数一不同,因此常常会在已经完成的包含此类电子元件夹持装置的卡的外表面上出现变形。也就是说,仅仅由于在卡体中存在经历了制造中的不同温度和压力的夹持部件,便会导致表面的变形。这些变形在最好的情况下只是不美观;在最坏的情况下,会阻碍卡完全平放于读卡器的卡接收插槽中。
某些存储卡制造商通过减小此类夹持装置的尺寸或通过使用胶合剂来在卡成型腔中进行热固注塑处理期间安全地定位其电子元件来解决该问题。然而,使用胶合剂来保护电子元件会导致另外一系列的问题。这些问题由下述事实导致:大多数可购得的用于将此类电子元件固定在适当的位置的快速凝固胶合剂通常具有高收缩度的特性。此外,固定电子元件需要相对较大量的胶合剂。使用较大量的高收缩度胶合剂会倾向于起褶皱,或者使施用了此类胶合剂的塑料片、层的区域发生变形。此褶皱会通过存储卡的较薄的主体传递,导致卡的外表面呈现局部波状的特征。如果超出一定的公差,则这些波状弯曲是存储卡行业所不能接受的,因为变形的存储卡将无法在特定器件中使用。
上面提到的存在于现有技术存储卡的制造中的一种额外限制,是指存储卡通常是以包含把填充环氧树脂或高温高压的热固材料注入模制形状的现有技术处理来制成。除了在高压高温的注入材料会压迫或破坏卡的电子元件的事实之外,还需要在压模中以相对较长的时间来凝固和冷却。环氧树脂在注入之后会发生化学反应,这会破坏存储卡的电子元件。所需的是这样一种制造存储卡的方法,该方法不需要为存储晶粒组件提供“团块封顶”,具有较短的凝固时间和较短的制造周期时间,并且不使用可能会破坏存储卡电子元件的内部夹持装置。
发明内容
因此本发明的目的之一是提供一种存储卡或类似设备,其具有从约0.76mm(传统信用卡的厚度)到约5.0mm的范围内的厚度、包含安全封装的集成电路和/或其它电子元件(如电阻)、并且具有可在其上印制复杂图形的高质量外表面。该存储卡的底表面必须包括外接触点来与其它设备进行电子连接。本发明的另一个目的是使用低压低温的处理把电子元件安全地封装在存储卡中,从而不需要对电子元件进行“团块封顶”。去除团块封顶处理将会节省对存储卡进行处理的时间,并将在存储卡内为附加的存储器或其它电子元件额外提供宝贵的空间。本发明的再一个目的是以能够提高生产效率的低温处理来缩短制造周期时间。低温处理允许以更少的能量来制造存储卡,并且能够大幅度地缩短生产周期时间,从而提高制造产量。
本发明的此目的和其它目的是通过提供一种多层存储卡而实现的,其中该多层存储卡带有如TeslinTM或其它合成纸或适当材料(如PVC、PC)的外层,并且带有对集成电路(如多媒体卡晶粒组件)进行安全封装的注入式聚合材料的核心层,所述核心层与TeslinTM或其它适当材料构成的外层安全地结合。
用低收缩度胶合剂将电子元件垫起在设备的底层之上,从而便于匀流以及通过注入的聚合材料对电子元件进行的完全封装。置于设备底层上的低收缩度胶合剂丘产生并保持大约0.1至0.15mm的空隙,从而允许注入的聚合物填充所述空隙并覆盖底层的顶表面以及顶层的底表面,从而不带空隙或空囊地将聚合材料均匀地完全分布在电子元件之下或之上的空隙中。或者,可以不使用底层而将电子元件直接置于底模上。按照这样的方式,各个电子元件的底部组成了设备的底表面。
TeslinTM、PVC、或其它适当材料的嵌片设计的目的是启动嵌体即电子元件的生产,以每片多个嵌体的方式进行。例如,图6说明了16×10的嵌体阵列(总共160个存储卡)。
在单个连续的片上制造嵌体,然后将其用机械工具切割成使存储卡的周围能够被注入的聚合物覆盖的形式。
附图说明
图1至图3分别以剖面顶视图、剖面侧视图、和底视图对一种现有技术存储卡进行了描述。
图4是用于制造现有技术存储卡的合成纸(如TeslinTM)或塑性材料(如PVC)的层或片的剖视侧视图。此视图示出在允许少量现有技术的“高收缩度”胶合剂凝固在合成纸或塑性材料上之前(图4(a))和之后(图4(b))的状态。
图5是根据本发明公开的指导所制造的存储卡的剖视侧视图。
图6和图7是一种模具的剖视侧视图,所述模具用于制造本发明公开的存储卡的第一优选实施例,其中示出了某些存储卡元件(如多媒体卡晶粒组件)在液体聚合材料注入存储卡的顶层和底层之间以前的状态(见图6),以及聚合材料注入顶层和底层之间的空隙、从而用聚合材料填充所述空隙、并且将存储卡的顶层冷成型为顶模的存储卡成型腔轮廓之后的状态(见图7)。
图8是示出一种从存储卡体前体移出的模具的剖视侧视图,其中所述存储卡体前体使用图7所述的系统来形成。
图9描述一种模具系统,其能够同时制造160个存储卡(其尺寸约为24mm×32mm)。
图10是已完成的不带单独底层的存储卡的剖视侧视图。
图11和图1 2是一种模具的剖视侧视图,所述模具用于制造本发明公开的存储卡的第一优选实施例,其中示出了将液态聚合材料注入存储卡顶层和电子元件之间之前的存储卡元件(如多媒体卡晶粒组件)。聚合材料注入顶层和电子元件之间的空隙,从而用聚合材料填充空隙,并且使存储卡的顶层冷成型为顶模的存储卡成型腔的轮廓。
图13是示出一种从存储卡体前体移出的模具的剖视侧视图,其中所述存储卡体前体使用图12所述的系统来形成。
具体实施方式
图4(a)和图4(b)对制造存储卡的现有技术方法所包含的问题进行说明。图4(a)用剖视截面图对具有顶表面41和底表面42的塑性材料40的片或层(如聚氯乙烯、聚氨酯等)进行说明。此类片将一般具有从大约0.075mm到大约0.25mm范围内的厚度43。对液体或半液体的高收缩度胶合剂44的丘、滴或块新近分配在如图4(a)所示的塑料片40的顶表面41上的状态进行描述。在图4(a)中描述的新近分配的胶合剂44的丘被示出具有初始宽度W1。图4(b)(以夸大的形式)示出图4(b)中所示的胶合剂44丘凝固成较小的已凝固胶合剂44’丘的结果。图4(b)中所描述的已凝固胶合剂44’丘的宽度W2比图4(b)中新敷的液体或半液体胶合剂44丘的宽度W1小很多。为简单起见,从新分配的高收缩度胶合剂丘的初始宽度W1到宽度W2的减少或收缩(即,ΔW),在图4(b)中用已凝固胶合剂44’丘左侧的尺寸“1/2ΔW”和右侧的同等的“1/2ΔW”来表示。这样的凝固也可用胶合剂44的原始丘的体积减小来表示。例如,在很多高收缩度胶合剂中,体积的减小可以达到20%至30%。
如先前提到的,也可用已凝固胶合剂的体积相对于新敷状态的胶合剂的体积的减少来说明“高收缩度”胶合剂相对“低收缩度”胶合剂的概念。
与高收缩度胶合剂相关的凝固处理使得图4(a)中所描述的胶合剂44的丘从可认为具有初始宽度W1(其中胶合剂丘处于半液体或粘着状态)的初始尺寸收缩至最终宽度W2(其中已凝固胶合剂44’实际上处于固态),并且高收缩度(如高于大约15%—通常高达20%至30%)导致塑性材料层或片的顶表面41发生“皱起”或其它的变形,如形成图4(b)中的褶皱45。此类变形动作会在塑性材料40的相对较薄的层(如0.075至0.25mm厚)中产生力。这些力被传递至塑性材料40的层的底表面42。这些传递来的力,接下来,在塑料层40的底表面42中产生变形46(曲线、弯曲、波形、波纹、褶皱等)。任意此类从平坦、光滑表面的偏离都会被存储卡行业认为是高度不可接受的变形,因此尽可能最大程度地将其最小化。本发明公开的处理的主要目标之一是获得不带有波形、弯曲、褶皱或其它缺陷的存储卡表面。
图5表示一种根据本发明公开的指导所制造的存储卡50的剖视侧视图。按照其最终的形态,这样一个存储卡50将由顶层51、底层52、和中间或核心层53组成,其中在核心层53中存储卡的电子元件(如多媒体晶粒组件,其包括基片55和接触垫56等)嵌入于热固聚合材料57(如原始的液体或半液体的热固树脂)中,其中所述材料57在凝固时构成完成的存储卡50的中间或核心层53。最终成为存储卡50的核心层53的热固材料57注入顶层51和底层52之间的空隙。
所述空隙具有高度58,并且从卡的一侧扩展到另一侧。如上文所述,制造存储卡的现有技术方法包括注入环氧树脂,其中所述环氧树脂发生化学反应来凝固并形成存储卡体。这些反应对于敏感电子元件如微处理器是潜在的危险。或者,现有技术方法包含高温热塑材料的高压注入。现有技术方法的注入高压和高温对电子元件也是危险的,这就是在使用现有技术方法时保护电子元件的“团块封顶”很常见的原因。图5中所示的不包含保护性“团块封顶”的电子元件的结构既不适用于环氧树脂,也不适用于高压注入的高温热塑材料。最后,注入模子的环氧树脂和高温热塑材料需要较长的时间来凝固。使用高温热塑和高压注入时所需的过长凝固和冷却时间使得设备的生产过程变缓。
为此,在申请人进行的处理中所用的相对低温、低压成型条件下注入聚合材料57,可以提供显著的益处。
总之,这样的热固聚合材料将注入并填满顶层51的内表面59和底层52的内表面60之间空隙58。在凝固时,核心层53的聚合材料57会粘合或附着到顶层51的内表面59和底层52的内表面60上,以制成统一的存储卡体。可以几种方式之一处理顶层和底层的内表面59和60来辅助完成所述粘合。举例来说,可以使用本领域中公知的粘合剂(如含氯聚烯烃纤维)来增强形成核心层的热固材料和制成顶层及底层的材料(如Teslin、PVC)之间的粘合。仅作为示例,明尼苏达矿业及制造公司的基本初级产品4475RTM可用于此粘合增强的目的,尤其当顶层或底层的材料为PVC时。可用于顶层和/或底层内表面的其它处理包括等离子电晕处理和酸蚀。
随着热固材料被注入空隙58中作为此发明公开的低温低压成型处理的一部分,存储卡的厚度61受到模面(在图5中未示出)布置的限制。事实上,注入顶层和底层之间的空隙58的热固材料充满空隙58的所有未被电子元件或低收缩度胶合剂62(电子元件置于其上)的丘占据的部分。
接下来,应当注意到,优选地通过使用申请人的低收缩度胶合剂62的一个或多个滴或块来把存储卡的电子元件(如多媒体晶粒组件基片55、存储芯片54等)置于底层52的内表面60之上。如上文所述,制造存储卡的现有技术方法不使用胶合剂来垫起存储卡的电子元件。这是因为现有技术方法包含注入环氧树脂或高压高温热塑材料的操作,二者都会破坏胶合剂。此外更重要的是,由于现有技术方法包含注入环氧树脂或高压高温热塑材料的操作,因此电子元件必须被“团块封顶”并且因而无需垫起电子元件。
在申请人的方法中,电子元件最优选地以图5所建议的方式置于两个或多个胶合剂62丘的顶部,这样所引入的液体或半液体聚合材料在从电子元件的上面和侧面浸没它们的同时也会从这些电子元件的下面流过。换句话说,在本发明的更优选的实施例中,胶合剂62的丘将会用作一个或多个“垫”,电子元件置于其上,因此电子元件的下侧不与底层52的顶表面60直接接触,而是浸没在引入的热塑材料57中。此种设计使得这些电子元件能够更好地抵御存储卡可能在其任一主要外表面或四个外棱面之一上遭受的曲力或扭力。在某些此发明的更优选的实施例中,这些电子元件(如存储芯片54)将会使用胶合剂而置于底层52的内表面60之上约0.075mm到0.13mm的距离处。
图6和图7对照说明申请人的用于制造存储卡及类似设备的方法的第一优选实施例。也就是说,图6表示本发明的一个特别优选的实施例,其中示出了由合成纸如TeslinTM或塑性材料如PVC构成的平坦顶层或片51在根据本发明公开的指导而被低温低压成型之前的状态。换句话说,图6表示注入聚合材料之前的模具设置,其中示出了将平坦的顶层51(如PVC的平板)初始置于顶模64的存储卡成型腔之下、以及将底层52(如另一个PVC平板)置于底模65之上的状态。然而,在申请人处理的一些次优但仍然可行的实施例中,顶层51优选地可以预先模制、或至少部分地预先模制成顶模64中的存储卡成型腔的通常轮廓。
通过比较,底模65不具有与顶模64中的型腔类似的型腔。图7表示把热固聚合材料57注入顶层51和底层52之间空隙的效果。这样,图7示出了热固聚合材料57被模制到顶模64中的存储卡成型腔66中之后的顶层51。参考图6,示出了插入腔口 68的用于注入液体或半液体热塑或热固聚合材料57的喷嘴67,其中所述腔口 68通向限制在顶层51的内表面59和底层52的内表面60之间的空隙。顶层51的顶表面69与底层52的底表面70之间的距离由距离78表示。空隙被示出从腔口68向并列的顶层51和底层52的另一端扩展。换句话说,在图6中,顶层51的外表面69的一部分未与顶模64的存储卡成型腔66的内表面72相接触。以对比的方式,底层52的外表面70被示出与底模65的内表面74形成基本平整的毗邻接触。
在图6和图7中,存储卡的电子元件(例如,其基片55、存储芯片54等)被示出位于底层52的内表面60的上方。仅作为示例,这些电子元件被示为垫在申请人的低收缩度胶合剂的两处或两块62上。这些胶合剂垫使电子元件保持在底层52的内表面60上方足够的距离处(如大约0.075mm到大约0.13mm),使得引入的热固聚合材料57能够既流入电子元件之上的区域也流入电子元件下面的区域75。再者,由于在电子元件下面存在热固聚合材料会增强对这些电子元件的保护,使其免受可能由存储卡的外表面(即,底层的外侧和/或顶层的外侧)接收到的任意力或冲击,所以这样的胶合剂垫结构是优选的。
在图6中,顶模64被示出具有型腔66,其限制将在注入处理期间形成的存储卡的顶表面轮廓。为此,液体或半液体的热固聚合材料57的注入都应当处在使顶层51于低温低压中被形成到顶模64的型腔66中的压力和温度条件下。图7示出本发明公开的低温低压成型处理如何实际地使顶层51的顶表面69符合顶模64中存储卡成型腔的结构。再者,在图7中示出了将底层52的底表面70成型到底模65的基本平坦的内表面74上的状态。这是本发明公开的特别优选的制造存储卡的结构。
在图6和图7中,顶模64的前唇区域76和底模65的前唇区域77被示出彼此隔开距离78’(考虑了顶层51和底层52的厚度),所述距离78’有效地分别限制了顶层51和底层52在模64和模65的唇区域76和77处的空隙宽度的距离。此距离使得热固聚合材料57能够被注入空隙中超过整个存储卡的长度。图6中示出的安装在系统右侧的模具设备的对应部分的距离58和左侧的距离78’可能不同。在任何情况下,距离58都应当使定义在通过顶模64的后唇79的顶层51内表面59与通过底模65的后唇80的底层52的内表面60之间的距离58’很小,但仍有限。也就是说,这个很小的距离58’应当足够大,以允许空隙中最初分别存在于顶层51和底层52之间(见图6)的气体81(如空气、聚合成分反应产生的气体等)、以及过量的聚合材料从所述空隙中排出,但是该距离还应当足够小,以保持用于注入热固聚合材料57的注入压力。距离58’优选地具有足够大的尺寸以允许液体聚合材料57的平滑薄层本身“喷出”或“飞出”空隙——并由此使得所有残留在、或产生于空隙中的气体从所述空隙、实际上从模具系统本身中除去。这样,所有的气体81会完全被引入的液体热固材料57所替换。此项排气技术用于防止在最终(即在热固材料凝固时)会构成如图7所示的核心层53的热固材料57内形成气泡。
图8示出从模具系统中移出的如图7所示类型的存储卡半成品或前体。剖面线84和86分别示出存储卡前体左端和右端的何处可以被切割或修剪以产生清晰的边缘和精确的存储卡成品的尺寸。在这种情况下,距离82约为32毫米。
图9说明了根据此发明公开的某些优选实施例进行的模制过程,其中同时模制尺寸约为24mm×32mm的160个存储卡50。
图10说明了使用本发明的一个替代实施例制造的已完成的存储卡122,其中电子元件(在图10中,存储晶粒组件由基片126、存储晶粒134、外部电子触点133、和附加元件组成)被用作底层而无需附加的底层。
图11和图12说明申请人的用于制造存储卡和类似设备的方法的第二实施例。也就是说,图11表示本发明的一个特别优选的实施例,其中示出了由合成纸如TeslinTM或塑性材料124如PVC构成的平坦顶层或片124在根据本发明公开的指导而被低温低压成型之前的状态。换句话说,图11表示注入聚合材料之前的模具设置,其中示出了将平坦的顶层124(如PVC的平板)初始置于顶模144的存储卡成型腔之下、以及将包括基片126、存储晶粒134、和外部触点133的电子元件置于底模146之上的状态。然而,在申请人处理的一些次优但仍然可行的实施例中,顶层124优选地可以预先模制、或至少部分地预先模制成顶模144中的存储卡成型腔164的通常轮廓。
通过比较,底模146不具有与顶模144中的型腔类似的型腔。图12表示把热固聚合材料注入顶层124和电子元件之间空隙136的效果。图12示出了顶层124被模制成顶模144中的存储卡成型腔164之后的状态。
示出了插入腔口149的用于注入液体或半液体热塑或热固聚合材料134的喷嘴148,其中所述腔口149通向限制在顶层124的内表面138和电子元件的内表面之间的空隙136。顶层124的顶表面155与存储卡的底表面158之间的距离由距离125表示。空隙136被示出从并列的顶层124和电子元件的左端向右端扩展。换句话说,在图11中,顶层124的外表面155未与顶模144的存储卡成型腔164的内表面156相接触。以对比的方式,电子元件的外表面158被示出与底模146的内表面160形成基本平整的毗邻接触。
在图11中,顶模144被示出具有型腔164,其限制将在注入处理期间形成的存储卡的顶表面轮廓。为此,液体或半液体的热固聚合材料134的注入都应当处在使顶层124于低温低压中被形成到顶模144的型腔164中的压力和温度条件下。图12示出本发明公开的低温低压成型处理如何实际地使顶层124的顶表面155符合顶模144中存储卡成型腔164的结构。再者,在图12中示出了将电子元件的底表面158成型到底模146的基本平坦的内表面160上的状态。
在图11和图12中,顶模144的前唇区域166和底模146的前唇区域168被示出彼此隔开距离170(考虑了顶层124和电子元件的厚度),所述距离170有效地分别限制了顶层124和电子元件在模144和模146的唇区域处的空隙宽度的距离。此距离170应当使得热固聚合材料134能够被注入空隙136中超过整个存储卡的长度。安装在模具系统右侧的模具设备的对应部分的距离170’和左侧的距离170可能不同。在任何情况下,距离170’都应当使定义在通过顶模144的后唇167的顶层124内表面138与通过底模146的后唇169的电子元件内表面之间的距离137很小,但仍有限。也就是说,这个很小的距离137应当足够大,以允许空隙136中最初分别存在于顶层124和电子元件(见图11)之间的气体172(如空气、聚合成分反应产生的气体等)、以及过量的聚合材料从所述空隙136中排出,但是该距离还应当足够小,以保持用于注入热固聚合材料的注入压力。距离137优选地具有足够大的尺寸以允许液体聚合材料134的平滑薄层本身“喷出”或“飞出”空隙1 36——并由此使得所有残留在、或产生于空隙136中的气体从所述空隙、实际上从模具系统本身中除去。这样,所有的气体172会完全被引入的液体热固材料134所替换。此项排气技术用于防止在最终(即在热固材料凝固时)会构成核心层128(图10)的热固材料134内形成气泡。
图13示出从模具系统中移出的如图12所示类型的存储卡半成品或前体。剖面线284和286分别示出存储卡前体左端和右端的何处可以被切割或修剪以产生清晰的边缘和精确的存储卡成品的尺寸。在这种情况下,距离274约为32毫米。
尽管对本发明的描述与各种特定示例以及基于使用特殊胶合剂和胶合过程的概念的倾向有关,但是应当理解,文中所述的发明在范围上仅受权利要求的限制。
Claims (43)
1.一种制造存储卡或类似设备的方法,其中所述存储卡或类似设备包括合成纸或其它适当材料的顶层、合成纸或其它适当材料的底层、和电子元件所在的核心层,所述方法包括步骤:
(1)构建带有精确定位的用于外部电气接触的开口的底层;
(2)将至少一个低收缩度胶合剂丘置于底层的内表面上;
(3)将带有外部电气触点的电子元件安装在至少一个的低收缩度胶合剂丘上,从而形成底层组件,其中所述外部电气触点处在与底层上的开口对准的位置;
(4)使所述至少一个的低收缩度胶合剂丘部分凝固,其中电子元件被固定在稳定的位置处;
(5)将底层组件置于底模中;
(6)将顶层置于顶模中;
(7)按照使顶层和底层之间产生空隙的方式使顶模靠近底模;
(8)将热固聚合材料在满足如下要求的温度和压力条件下注入空隙中,所述温度和压力条件使得:(a)当电子元件和部分凝固的胶合剂浸没在热固材料中时使得电子元件被部分凝固的胶合剂固定在适当的位置,(b)气体和过量的聚合材料从空隙中驱出,(c)在部分凝固的胶合剂变成完全凝固之前把电子元件封装在热固聚合材料中,(d)随着部分凝固的胶合剂完全凝固的收缩使外部电气触点的下表面与底层的底表面齐平,并且(e)热固聚合材料粘合顶层与底层来制成存储卡体的统一前体;
(9)从模具设备中移出存储卡体的统一前体;以及
(10)将存储卡或类似设备的前体修剪至期望的尺寸以制成存储卡。
2.如权利要求1所述的方法,其中所述电子元件与底层不发生物理接触。
3.如权利要求1所述的方法,其中所述电子元件置于底层之上至少0.01mm处。
4.如权利要求1所述的方法,其中所述电子元件是集成电路,其垫在至少两个胶合剂丘上,所述胶合剂丘把所述集成电路保持在底层之上至少0.01mm处。
5.如权利要求1所述的方法,其中所述低收缩度胶合剂是能够在约5秒或更短时间内至少部分凝固的氰丙烯酸酯粘合型胶合剂。
6.如权利要求1所述的方法,其中所述低收缩度胶合剂是能够在约5秒或更短时间内至少部分凝固的UV可凝固胶合剂。
7.如权利要求1所述的方法,其中所述低收缩度胶合剂在3秒或更短的时间内凝固10%。
8.如权利要求1所述的方法,其中所述低收缩度胶合剂当其浸没在热固材料中时凝固10%至90%。
9.如权利要求1所述的方法,其中对顶层的内表面和底层的内表面进行处理,使得顶层和热固材料之间以及底层和热固材料之间易于产生牢固的粘结。
10.如权利要求1所述的方法,其中通过对顶层的内表面和底层的内表面分别敷涂粘合剂来进行处理。
11.如权利要求1所述的方法,其中通过电晕放电处理对顶层的内表面和底层的内表面进行处理。
12.如权利要求1所述的方法,其中热固材料以环境压力和500psi之间的压力注入空隙中。
13.如权利要求1所述的方法,其中热固材料以80和120psi之间的压力注入空隙中。
14.如权利要求1所述的方法,其中热固材料以56.和120.之间的温度注入空隙中。
15.如权利要求1所述的方法,其中热固材料以65.和70.之间的温度注入顶层和底层之间的空隙中。
16.如权利要求1所述的方法,其中薄膜承载的字母数字/图形信息被施加在顶层的内表面上。
17.如权利要求1所述的方法,其中把不透明防护材料层贴在顶层的内表面和底层的内表面上。
18.如权利要求1所述的方法,其中所述电子元件是
(a)多媒体卡晶粒组件,
(b)安全数字卡晶粒组件,或
(c)另一种存储卡晶粒组件,
其电气连接到外部触点。
19.如权利要求1所述的方法,其中顶层和底层皆由聚合材料的平板形成。
20.如权利要求1所述的方法,其中顶层被预形成为带有至少一个存储卡成型腔。
21.如权利要求1所述的方法,其中顶层被成型到顶模的存储卡成型腔中,底层被成型为与底模的一个基本平坦的表面相对。
22.如权利要求1所述的方法,其中所述热固材料是聚氨酯。
23.如权利要求1所述的方法,其中所述热固材料是环氧树脂。
24.如权利要求1所述的方法,其中所述热固材料是不饱和聚酯。
25.如权利要求1所述的方法,其中所述空隙被一个门充满,所述门的宽度至少是该门所服务的存储卡或类似设备的前体边缘宽度的25%。
26.一种制造存储卡或类似设备的方法,其中所述存储卡或类似设备包括顶层、内嵌有电子元件的核心层、和底层,所述方法包括步骤:
(1)构建带有精确定位的用于外部电气接触的开口的底层;
(2)将至少一个体积小于0.1cc的低收缩度胶合剂丘置于底层的内表面上;
(3)将带有外部电气触点的电子元件安装在所述至少一个低收缩度胶合剂丘上,从而形成底层组件,其中所述外部电气触点处在与底层上的开口对准的位置;
(4)使所述低收缩度胶合剂丘总量的10%至90%凝固将在低于5秒的时间内完成,其中电子元件被固定在稳定的位置处;
(5)将底层组件置于底模中;
(6)将顶层置于顶模中;
(7)按照使顶层和底层之间产生空隙的方式使顶模靠近底模;
(8)将热固材料在65.和70.之间的温度以及80psi至120psi之间的压力条件下注入空隙中,所述温度和压力条件使得:(a)当电子元件和部分凝固的胶合剂丘浸没在热固材料中时使得电子元件被部分凝固的胶合剂固定在适当的位置,(b)气体和过量的聚合材料从空隙中驱出,(c)在部分凝固的胶合剂变成完全凝固之前把电子元件封装在热固聚合材料中,(d)随着部分凝固的胶合剂完全凝固的收缩使外部电气触点的下表面与底层的底表面齐平,并且(e)热固聚合材料粘合顶层与底层来制成存储卡体的统一前体;
(9)从模具设备中移出存储卡或类似设备体的统一前体;以及
(10)将存储卡前体修剪至期望的尺寸以制成存储卡。
27.一种制造存储卡或类似设备的方法,其中所述存储卡或类似设备包括合成纸或其它适当材料的顶层、和电子元件所在的底层,所述方法包括步骤:
(1)构建带有外部电气触点的电子元件;
(5)将电子元件置于底模中;
(6)将顶层置于顶模中;
(7)按照使顶层和电子元件之间产生空隙的方式使顶模靠近底模;
(8)将热固聚合材料在满足以下要求的温度和压力条件下注入空隙中,所述温度和压力条件使得:(a)暴露的电子元件被热固材料完全覆盖,从而形成底层,(b)气体和过量的聚合材料从空隙中驱出,(c)把电子元件封装在热固聚合材料中,并且(d)所述热固聚合材料粘合顶层来制成存储卡体的统一前体;
(9)从模具设备中移出存储卡体的统一前体;以及
(10)将存储卡或类似设备的前体修剪至期望的尺寸以制成存储卡。
28.如权利要求27所述的方法,其中对顶层的内表面进行处理,使得顶层和热固材料之间易于产生牢固的粘结。
29.如权利要求27所述的方法,其中通过对顶层的内表面敷涂粘合剂来进行处理。
30.如权利要求27所述的方法,其中通过电晕放电处理对顶层的内表面进行处理。
31.如权利要求27所述的方法,其中热固材料以环境压力和500psi之间的压力注入空隙中。
32.如权利要求27所述的方法,其中热固材料以80和120psi之间的压力注入空隙中。
33.如权利要求27所述的方法,其中热固材料以56.和120.之间的温度注入空隙中。
34.如权利要求27所述的方法,其中热固材料以65.和70.之间的温度注入顶层和电子元件之间的空隙中。
35.如权利要求27所述的方法,其中薄膜承载的字母数字/图形信息被施加在顶层的内表面上。
36.如权利要求27所述的方法,其中把不透明防护材料层贴在顶层的内表面上。
37.如权利要求27所述的方法,其中所述电子元件是
(a)多媒体卡晶粒组件,
(b)安全数字卡晶粒组件,或
(c)另一种存储卡晶粒组件,
其电气连接到外部触点。
38.如权利要求27所述的方法,其中顶层是由聚合材料的平板形成。
39.如权利要求27所述的方法,其中顶层被预形成为带有至少一个存储卡成型腔。
40.如权利要求27所述的方法,其中所述热固材料是聚氨酯。
41.如权利要求27所述的方法,其中所述热固材料是环氧树脂。
42.如权利要求27所述的方法,其中所述热固材料是不饱和聚酯。
43.如权利要求27所述的方法,其中所述空隙被一个门充满,所述门的宽度至少是该门所服务的存储卡或类似设备的前体边缘宽度的25%。
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US (1) | US7225537B2 (zh) |
EP (1) | EP1844531A4 (zh) |
JP (1) | JP4987732B2 (zh) |
KR (1) | KR20070103044A (zh) |
CN (1) | CN100575045C (zh) |
AU (1) | AU2005325736B2 (zh) |
BR (1) | BRPI0519934A2 (zh) |
CA (1) | CA2596170A1 (zh) |
HK (1) | HK1112115A1 (zh) |
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US6509217B1 (en) * | 1999-10-22 | 2003-01-21 | Damoder Reddy | Inexpensive, reliable, planar RFID tag structure and method for making same |
FR2801707B1 (fr) * | 1999-11-29 | 2002-02-15 | A S K | Procede de fabrication d'une carte a puce hybride contact- sans contact avec un support d'antenne en materiau fibreux |
FR2829857B1 (fr) * | 2001-09-14 | 2004-09-17 | A S K | Carte a puce sans contact ou hybride contact-sans contact a tenue renforcee du module electronique |
US6965160B2 (en) * | 2002-08-15 | 2005-11-15 | Micron Technology, Inc. | Semiconductor dice packages employing at least one redistribution layer |
-
2005
- 2005-01-27 US US11/044,329 patent/US7225537B2/en not_active Expired - Fee Related
- 2005-03-03 AU AU2005325736A patent/AU2005325736B2/en not_active Ceased
- 2005-03-03 CN CN200580049201A patent/CN100575045C/zh not_active Expired - Fee Related
- 2005-03-03 WO PCT/US2005/006948 patent/WO2006080929A1/en active Application Filing
- 2005-03-03 BR BRPI0519934-4A patent/BRPI0519934A2/pt not_active IP Right Cessation
- 2005-03-03 JP JP2007553082A patent/JP4987732B2/ja not_active Expired - Fee Related
- 2005-03-03 MX MX2007009123A patent/MX2007009123A/es active IP Right Grant
- 2005-03-03 KR KR1020077019482A patent/KR20070103044A/ko active IP Right Grant
- 2005-03-03 EP EP05724485A patent/EP1844531A4/en not_active Withdrawn
- 2005-03-03 CA CA002596170A patent/CA2596170A1/en not_active Abandoned
-
2007
- 2007-07-26 IL IL184850A patent/IL184850A0/en unknown
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2008
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103660129A (zh) * | 2012-09-12 | 2014-03-26 | 东莞市铭基电子有限公司 | 低压注塑方法 |
CN109643361A (zh) * | 2016-07-07 | 2019-04-16 | 艾利丹尼森零售信息服务公司 | 安装的芯片的生产的反馈控制 |
CN109643361B (zh) * | 2016-07-07 | 2022-03-15 | 艾利丹尼森零售信息服务公司 | 安装的芯片的生产的反馈控制 |
CN112571717A (zh) * | 2019-09-30 | 2021-03-30 | 利萨·德雷克塞迈尔有限责任公司 | 导电的车辆构件的制造 |
Also Published As
Publication number | Publication date |
---|---|
US7225537B2 (en) | 2007-06-05 |
US20060162156A1 (en) | 2006-07-27 |
JP2008528331A (ja) | 2008-07-31 |
HK1112115A1 (en) | 2008-08-22 |
CA2596170A1 (en) | 2006-08-03 |
AU2005325736A1 (en) | 2006-08-03 |
EP1844531A4 (en) | 2009-05-06 |
IL184850A0 (en) | 2007-12-03 |
WO2006080929A1 (en) | 2006-08-03 |
CN100575045C (zh) | 2009-12-30 |
JP4987732B2 (ja) | 2012-07-25 |
BRPI0519934A2 (pt) | 2009-04-07 |
KR20070103044A (ko) | 2007-10-22 |
MX2007009123A (es) | 2008-02-19 |
EP1844531A1 (en) | 2007-10-17 |
AU2005325736B2 (en) | 2012-04-19 |
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