CN101206913A - 三维磁存储器 - Google Patents
三维磁存储器 Download PDFInfo
- Publication number
- CN101206913A CN101206913A CNA2007101601439A CN200710160143A CN101206913A CN 101206913 A CN101206913 A CN 101206913A CN A2007101601439 A CNA2007101601439 A CN A2007101601439A CN 200710160143 A CN200710160143 A CN 200710160143A CN 101206913 A CN101206913 A CN 101206913A
- Authority
- CN
- China
- Prior art keywords
- storage layer
- data storage
- magnetic
- magnetic domain
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
- G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
- G11C19/0808—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation
Abstract
Description
Claims (54)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/615,618 US7388776B1 (en) | 2006-12-22 | 2006-12-22 | Three-dimensional magnetic memory |
US11/615,618 | 2006-12-22 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101206913A true CN101206913A (zh) | 2008-06-25 |
CN101206913B CN101206913B (zh) | 2011-04-13 |
Family
ID=39269321
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2007101601439A Expired - Fee Related CN101206913B (zh) | 2006-12-22 | 2007-12-24 | 三维磁存储器 |
Country Status (5)
Country | Link |
---|---|
US (3) | US7388776B1 (zh) |
EP (1) | EP1936629A1 (zh) |
JP (1) | JP5094364B2 (zh) |
KR (1) | KR101480377B1 (zh) |
CN (1) | CN101206913B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104932842A (zh) * | 2015-06-18 | 2015-09-23 | 武汉新芯集成电路制造有限公司 | 一种将三维存储器的三维比特数据转换成二维比特图的方法 |
CN106558320A (zh) * | 2015-09-18 | 2017-04-05 | 希捷科技有限责任公司 | 最大化smr驱动器容量 |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8120949B2 (en) * | 2006-04-27 | 2012-02-21 | Avalanche Technology, Inc. | Low-cost non-volatile flash-RAM memory |
US7388776B1 (en) * | 2006-12-22 | 2008-06-17 | Hitachi Global Storage Technologies Netherlands, B.V. | Three-dimensional magnetic memory |
US8031519B2 (en) * | 2008-06-18 | 2011-10-04 | Crocus Technology S.A. | Shared line magnetic random access memory cells |
JP2010182824A (ja) * | 2009-02-04 | 2010-08-19 | Toshiba Corp | 磁気ランダムアクセスメモリの製造方法及び混載メモリの製造方法 |
KR20110029811A (ko) * | 2009-09-16 | 2011-03-23 | 삼성전자주식회사 | 수직 나노 와이어를 포함하는 정보 저장 장치 |
US8164940B2 (en) * | 2009-12-15 | 2012-04-24 | Hitachi Global Storage Technologies Netherlands, B.V. | Read/write structures for a three dimensional memory |
US8754491B2 (en) | 2011-05-03 | 2014-06-17 | International Business Machines Corporation | Spin torque MRAM using bidirectional magnonic writing |
US8456894B2 (en) | 2011-05-03 | 2013-06-04 | International Business Machines Corporation | Noncontact writing of nanometer scale magnetic bits using heat flow induced spin torque effect |
US8456895B2 (en) * | 2011-05-03 | 2013-06-04 | International Business Machines Corporation | Magnonic magnetic random access memory device |
US9713203B2 (en) * | 2012-03-19 | 2017-07-18 | Iii Holdings 1, Llc | Tool for annealing of magnetic stacks |
KR102023626B1 (ko) | 2013-01-25 | 2019-09-20 | 삼성전자 주식회사 | 스핀 홀 효과를 이용한 메모리 소자와 그 제조 및 동작방법 |
JP2020042882A (ja) | 2018-09-12 | 2020-03-19 | キオクシア株式会社 | 磁気メモリ |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2986622B2 (ja) * | 1992-09-02 | 1999-12-06 | シャープ株式会社 | 光磁気メモリー素子およびその記録再生方法 |
US5930164A (en) * | 1998-02-26 | 1999-07-27 | Motorola, Inc. | Magnetic memory unit having four states and operating method thereof |
DE19946490A1 (de) * | 1999-09-28 | 2001-04-19 | Infineon Technologies Ag | Magnetoresistiver Schreib/Lese-Speicher sowie Verfahren zum Beschreiben und Auslesen eines solchen Speichers |
US6590806B1 (en) * | 2000-03-09 | 2003-07-08 | Hewlett-Packard Development Company, L.P. | Multibit magnetic memory element |
US6911710B2 (en) * | 2000-03-09 | 2005-06-28 | Hewlett-Packard Development Company, L.P. | Multi-bit magnetic memory cells |
US6483740B2 (en) * | 2000-07-11 | 2002-11-19 | Integrated Magnetoelectronics Corporation | All metal giant magnetoresistive memory |
JP4666774B2 (ja) * | 2001-01-11 | 2011-04-06 | キヤノン株式会社 | 磁気薄膜メモリ素子、磁気薄膜メモリおよび情報記録再生方法 |
KR20050002805A (ko) * | 2001-11-30 | 2005-01-10 | 시게이트 테크놀로지 엘엘씨 | 반-강자성 결합된 수직 자기 기록 매체 |
JP2003346474A (ja) * | 2002-03-19 | 2003-12-05 | Mitsubishi Electric Corp | 薄膜磁性体記憶装置 |
US6848067B2 (en) * | 2002-03-27 | 2005-01-25 | Hewlett-Packard Development Company, L.P. | Multi-port scan chain register apparatus and method |
US6940748B2 (en) * | 2002-05-16 | 2005-09-06 | Micron Technology, Inc. | Stacked 1T-nMTJ MRAM structure |
US7209378B2 (en) * | 2002-08-08 | 2007-04-24 | Micron Technology, Inc. | Columnar 1T-N memory cell structure |
US6838740B2 (en) * | 2002-09-27 | 2005-01-04 | Grandis, Inc. | Thermally stable magnetic elements utilizing spin transfer and an MRAM device using the magnetic element |
JP3863484B2 (ja) * | 2002-11-22 | 2006-12-27 | 株式会社東芝 | 磁気抵抗効果素子および磁気メモリ |
US6829161B2 (en) * | 2003-01-10 | 2004-12-07 | Grandis, Inc. | Magnetostatically coupled magnetic elements utilizing spin transfer and an MRAM device using the magnetic element |
JP2004253739A (ja) * | 2003-02-21 | 2004-09-09 | Sony Corp | 磁気記憶素子及びその記録方法、並びに磁気記憶装置 |
US6847547B2 (en) * | 2003-02-28 | 2005-01-25 | Grandis, Inc. | Magnetostatically coupled magnetic elements utilizing spin transfer and an MRAM device using the magnetic element |
US6925000B2 (en) * | 2003-12-12 | 2005-08-02 | Maglabs, Inc. | Method and apparatus for a high density magnetic random access memory (MRAM) with stackable architecture |
US7706179B2 (en) * | 2004-08-04 | 2010-04-27 | The Florida International University Board Of Trustees | Three dimensional magnetic memory and/or recording device |
US7289356B2 (en) * | 2005-06-08 | 2007-10-30 | Grandis, Inc. | Fast magnetic memory devices utilizing spin transfer and magnetic elements used therein |
KR100790886B1 (ko) * | 2006-09-15 | 2008-01-03 | 삼성전자주식회사 | 자구 벽 이동을 이용한 정보 저장 장치 |
US7388776B1 (en) * | 2006-12-22 | 2008-06-17 | Hitachi Global Storage Technologies Netherlands, B.V. | Three-dimensional magnetic memory |
-
2006
- 2006-12-22 US US11/615,618 patent/US7388776B1/en not_active Expired - Fee Related
-
2007
- 2007-08-10 EP EP07253151A patent/EP1936629A1/en not_active Withdrawn
- 2007-12-10 KR KR20070127544A patent/KR101480377B1/ko active IP Right Grant
- 2007-12-21 JP JP2007330313A patent/JP5094364B2/ja not_active Expired - Fee Related
- 2007-12-24 CN CN2007101601439A patent/CN101206913B/zh not_active Expired - Fee Related
-
2008
- 2008-05-06 US US12/116,111 patent/US7606065B2/en not_active Expired - Fee Related
-
2009
- 2009-09-03 US US12/553,670 patent/US8018765B2/en not_active Expired - Fee Related
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104932842A (zh) * | 2015-06-18 | 2015-09-23 | 武汉新芯集成电路制造有限公司 | 一种将三维存储器的三维比特数据转换成二维比特图的方法 |
CN104932842B (zh) * | 2015-06-18 | 2018-03-02 | 武汉新芯集成电路制造有限公司 | 一种将三维存储器的三维比特数据转换成二维比特图的方法 |
CN106558320A (zh) * | 2015-09-18 | 2017-04-05 | 希捷科技有限责任公司 | 最大化smr驱动器容量 |
CN106558320B (zh) * | 2015-09-18 | 2019-12-31 | 希捷科技有限责任公司 | 最大化smr驱动器容量 |
Also Published As
Publication number | Publication date |
---|---|
JP5094364B2 (ja) | 2012-12-12 |
US20080205116A1 (en) | 2008-08-28 |
JP2008159247A (ja) | 2008-07-10 |
CN101206913B (zh) | 2011-04-13 |
US7606065B2 (en) | 2009-10-20 |
US8018765B2 (en) | 2011-09-13 |
EP1936629A1 (en) | 2008-06-25 |
KR20080059044A (ko) | 2008-06-26 |
US7388776B1 (en) | 2008-06-17 |
US20100002487A1 (en) | 2010-01-07 |
KR101480377B1 (ko) | 2015-01-09 |
US20080151596A1 (en) | 2008-06-26 |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee |
Owner name: HGST NETHERLANDS BV Free format text: FORMER NAME: HITACHI GLOBAL STORAGE TECH |
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CP01 | Change in the name or title of a patent holder |
Address after: Amsterdam Patentee after: Hitachi Global Storage Technologies Netherlands B. V. Address before: Amsterdam Patentee before: Hitachi Global Storage Tech |
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TR01 | Transfer of patent right |
Effective date of registration: 20190125 Address after: American California Patentee after: Western Digital Technologies, Inc. Address before: Amsterdam Patentee before: Hitachi Global Storage Technologies Netherlands B. V. |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110413 Termination date: 20191224 |
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CF01 | Termination of patent right due to non-payment of annual fee |