CN101235482B - 用于衬底处理腔室的工艺配件 - Google Patents
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Abstract
一种工艺配件，包含护板和放置在处理腔室中的衬底支架周围的环组件，该环组件用于减少工艺沉积物沉积在内部腔室组件和衬底的悬臂边缘上。该护板包含：圆柱带，该圆柱带具有围绕溅射靶的顶壁和围绕衬底支架的底壁；支撑壁架；倾斜阶梯；和具有气体热导孔的U型沟道。该环组件包含沉积环和盖环，盖环在环周界周围具有球形隆凸。
Description
技术领域
本发明的实施方式涉及用于衬底处理腔室的工艺配件。
背景技术
在集成电路和显示器的制造中，诸如半导体晶圆或显示器面板的衬底放置在衬底处理腔室中，在腔室中设定处理条件以在衬底上沉积或蚀刻材料。典型的工艺腔室包含腔室组件，其包括围绕工艺区域的围护壁、用于提供腔室中工艺气体的气体供应、用于激励工艺气体以处理衬底的气体激发器、用于去除废气并保持腔室中的气压的气体排放装置，以及用于保持衬底的衬底支架。该腔室可包括，例如，溅射(PVD)、化学气相沉积(CVD)和蚀刻腔室。在PVD腔室中，通过激发的气体溅射靶，以溅射靶材，其随后沉积在面对靶的衬底上。
在溅射工艺中，从靶溅射的材料还沉积在围绕靶的腔室组件的边缘上，这是不期望的。外围靶区域具有暗区，在该暗区中溅射材料由于在该区域中的离子散射而再沉积。在该区域中的溅射材料的积累和聚集是不期望的，原因在于所积累的沉积物需要靶和围绕组件的拆卸和清洗或替换，可导致等离子体短路，并且可导致靶与腔室壁之间产生电弧。这些沉积物还经常由于热应力而分离和剥离，从而落在腔室和组件内部并污染腔室和组件。
工艺配件，其包含围绕衬底支架和腔室侧壁配置的护板、盖环和沉积环，通常用于接收额外的溅射材料以保护并防止在腔室壁和其它组件表面上沉积。周期地，工艺配件组件被拆开并从腔室去除，用于清洗掉积累的沉积物。因而，期望具有工艺配件组件，其设计以容纳并容忍更大量的积累沉积物，而不彼此粘结或者不会粘到衬底，或者导致工艺清洗循环之间的沉积物剥离。还期望具有工艺配件，其包含较少的部件或组件，并且具有彼此相关的形状和配置以减少形成于工艺腔室内部表面上的溅射沉积物量。
当腔室衬垫和护板加热高达过高温度时，由于暴露于腔室中的溅射等离子体以及护板与腔室组件之间的热导率，产生另一问题。例如，其难以控制由低热导率材料制成的护板的温度。在与制成组件诸如适配器的接触界面处的热电阻也影响护板温度。在护板和适配器之间的低夹持力还可引起护板的加热。如果不受热控制，则在连续的衬底处理期间，护板的温度在理想的室温条件和高温之间循环。当高应力金属的工艺沉积物沉积到护板上并且经受大温度振幅时，薄膜到护板的粘结以及薄膜自身的内聚力将显著降低，原因在于，例如薄膜和其下护板之间的热膨胀的系数错配。期望在衬底处理期间降低护板和衬垫的温度，从而减少积累的沉积物从护板表面剥离。
由于从腔室的弱气体传导，产生传统的衬底处理腔室和PVD工艺的另一问题。需要高传导气体流经路，以供应必须的工艺气体到工艺空腔并且适当地排出废工艺气体。然而，排列腔室壁的工艺配件的护板和其它腔室组件实质上减小气体传导流。在这些组件中放置孔同时增加经过的气体传导率，还允许视线溅射沉积物经过气体传导孔退出，从而沉积在腔室壁上。该孔还可导致等离子体从处理空间内泄露，以围绕腔室区域。另外，结合该孔的腔室组件具有其它缺点，包括，但是不限于需要额外的部件、它们相对脆弱、多个部件的容忍叠层和在界面的弱热导率。
因而，期望具有工艺配件组件，其增加热导率同时减小工艺沉积物从组件表面剥离。还期望控制护板和衬垫的温度，使得它们在等离子体处理期间不在过高温度和低温度之间循环。还期望增加总气体传导同时防止在工艺区域外部的视线沉积并减小等离子体泄露。
发明内容
在第一方案中，本发明提供围绕与衬底处理腔室中的衬底支架面对的溅射靶的护板，该护板包含：(a)圆柱带，其具有围绕溅射靶的顶壁和围绕衬底支架的底壁；(b)支撑壁架，其从圆柱带的顶壁径向向外延伸；(c)倾斜阶梯，其从圆柱带的底壁径向向内延伸；以及(d)U-型沟道，其接合到倾斜阶梯，并且该沟道围绕衬底支架，该U型沟道包含第一和第二腿部件，第一腿部件具有多个气孔以允许工艺气体经过，从而该气孔提供升高的气体传导。
在第二方案中，本发明提供放置在衬底处理腔室中沉积环周围的盖环，该沉积环位于腔室中的衬底支架和圆柱护板之间，并且所述盖环包含：(a)环形楔，其包含：围绕所述衬底支架的倾斜顶表面，所述倾斜顶表面具有内部和外部外围；所述倾斜顶表面的外部外围周围的球形隆凸；从所述倾斜顶表面向下延伸以放置在所述沉积环上的基脚；以及在所述倾斜顶表面的内部外围周围的凸起边；以及(b)从所述环形楔向下延伸的内部和外部圆柱带，所述内部带的高度小于所述外部带。
在第三方案中，本发明提供放置在衬底处理腔室中的溅射靶和衬底支架周围的工艺配件，所述工艺配件包含：(a)围绕所述溅射靶的护板，所述护板包含：(1)围绕所述溅射靶和衬底支架的圆柱带；(2)从所述圆柱带径向向外延伸的支撑壁架；(3)在所述支撑壁架下方并且从所述圆柱带径向向内延伸的倾斜阶梯；以及(4)U-型沟道，其接合到所述倾斜阶梯并且围绕所述衬底支架，该U-型沟道包含第一和第二腿部件，所述第一腿部件具有多个气孔，从而使工艺气体以升高的气体传导经过；以及(b)环组件，其包含：(1)在所述衬底支架周围的盖环，所述盖环包含：含有在所述衬底支架周围的倾斜顶表面的环形楔，所述倾斜顶表面具有内部和外部外围；在所述倾斜顶表面的外部外围周围的球形隆凸；从所述倾斜顶表面向下延伸以放置在所述沉积环上的基脚；在所述倾斜顶表面的内部外围周围的凸起边；从所述环形楔向下延伸的内部和外部圆柱带，所述内部圆柱带的高度比所述外部圆柱带小；以及(2)支撑所述盖环的沉积环。
在第四方案中，本发明提供一种溅射腔室，其包含(a)溅射靶，其用于将溅射材料沉积到衬底上；(b)在所述衬底支架周围的盖环；(c)围绕所述溅射靶和所述衬底支架的护板；(d)在所述衬底支架周围的盖环；(e)支撑所述盖环的沉积环；所述沉积环包含放置在所述底座的容纳表面上的圆盘和围绕所述圆盘的环形楔，所述环形楔包含从所述环形楔向内延伸的圆柱带，以及放置在所述底座上的基脚；(f)气体分配器，以将气体引入到所述腔室中；(g)气体激发器，以激发气体，从而形成等离子体，以溅射所述溅射靶；以及(h)排气装置，以从所述腔室排出气体。
附图说明
参照以下描述、附属的权利要求书和示出本发明的实施例的附图，本发明的这些特征、方案和优点将更加易于理解。然而，应该理解一般地每个特征都可用于本发明中，不仅仅在特定附图的文本中，并且本发明包括这些特征的任意组合，其中：
图1是衬底处理腔室的实施方式的示意性横截面视图，其示出工艺配件组件和溅射靶；
图2A是在衬底处理腔室内具有护板和环组件的工艺配件的透视图；
图2B是护板的简要顶视图；
图3A-B是连接到适配器的护板的上部分的横截面视图；以及
图4是衬底处理腔室的另一方案的示意性横截面视图，其示出了护板和环组件。
具体实施方式
在图1中示出了能处理衬底104的适当的工艺腔室100的实施例。腔室100典型地是可从California的Santa Clara的应用材料有限公司购得的CLEANWTM腔室。然而，其它工艺腔室也可结合本发明使用。腔室100包含围护壁106，其围绕工艺区域108。壁106包括侧壁116、底壁120和顶部124。腔室100可以为多腔平台(未示出)的一部分，其中该多腔平台具有通过在各个腔室之间传送衬底104的诸如机器人臂的衬底传送机构连接的互连腔室的集成。在图1中示出的方案中，工艺腔室100为溅射沉积腔室，还已知为物理气相沉积或PVD腔室，能将所沉积的材料诸如铝、铜、钽、钽氮化物、钛、钛氮化物、钨和钨氮化物的其中之一或多种溅射到衬底104上。
腔室100包含衬底支架130，该支架包含底座134以支撑衬底104。底座134具有衬底容纳表面138，其具有基本平行于高架溅射靶140的溅射表面139的平面。在处理期间，底座134的衬底容纳表面138容纳并支撑衬底104。底座134可包括静电夹盘或加热器诸如电阻加热器或热交换器。在操作中，衬底104经过腔室100的侧壁116的衬底负载入口142而引入到腔室100中并且被放置到衬底支架130上。支架130可通过支架升降波纹管被提升或降低，并且在通过机器人臂将衬底104放置到衬底支架130上期间，升降指针组件可用于将衬底104提升或降低到支架130上。在等离子体操作期间，底座134可保持在电浮电势或接地。
腔室100还包含工艺配件200，如在图2A和图2B中所示，其包含易于从腔室100去除的各种组件，例如，以将溅射沉积物清洗离开组件表面、替换或修理被侵蚀组件，或以使腔室100适应其它工艺。在一个方案中，工艺配件200包含放置在衬底支架130的外围壁204周围的护板201和环组件202，其在衬底104的悬臂边缘206之前终止。环组件202包含沉积环208和盖环212。沉积环208包含围绕支架130的环形带215。盖环212至少部分覆盖沉积环208。沉积环208和盖环212彼此协作以减小溅射沉积形成于支架130的外围壁204和衬底104的悬臂边缘206上。
护板201围绕溅射靶140的溅射表面139，该溅射靶面向衬底支架130和衬底支架130的外部外围。护板201覆盖并遮蔽腔室100的侧壁116，以减小源自溅射靶140的溅射表面139的溅射沉积物沉积到护板201后面的组件和表面上。例如，护板201可保护支架130的表面、悬臂衬底104的边缘206、腔室100的侧壁116和底壁120。
如在图2A、图2B和图3A、3B中所示，护板201具有单一的构造并包含圆柱带214，其具有设计大小以围绕溅射靶140的溅射表面139和衬底支架130的直径。圆柱带214具有围绕溅射靶140的溅射表面139的顶壁216。支撑壁架219从圆柱带214的顶壁216径向向外延伸。适配器226可包含O-环凹槽222，在其中放置O-环223以在适配器和绝缘体310之间形成真空密封，从而防止越过护板201而泄露。支撑壁架219包含支持表面224以放置在围绕腔室100的侧壁116的环形适配器226上。支撑壁架219的支持表面224包含多个槽228，该槽设计形状和尺寸以容纳销282，从而使护板201与适配器226对齐。销282可被压配入适配器226中。设置多个孔229以容纳将护板201耦接到适配器的紧固件230。在一个实施方式中，紧固件230穿过护板201的孔229和适配器板226的孔220，并且穿入到固定板297的孔295中。固定板297可以为不锈钢环或其它适当的材料。尽管在图2B中仅示出了一个槽228和一个孔229，但是多个槽228和孔229围绕护板201的圆周分布。
适配器226支撑护板201并可用作衬底处理腔室100的壁116周围的热交换器。可选地，适配器226可包括电阻加热器或温度控制流体的导管，使得如果需要适配器226可加热或冷却护板201。适配器226和护板201形成使热量更好地从护板201传送到的组件，并且该组件减小沉积于护板上的处理上的热膨胀应力。部分护板201由于暴露于形成于衬底处理腔室中的等离子体而变得过热，导致护板热膨胀并且导致形成于护板上的溅射沉积物从护板剥离并落到衬底104上并且污染衬底104。适配器226具有接触表面232，其与护板201的支持表面224接触，从而允许护板201和适配器226之间良好的热导率。在一个方案中，护板201的支持表面224和适配器226的接触表面232每个都具有从大约10到大约80微英寸的表面粗糙度，或者甚至从大约16到大约63微英寸，或者在一个方案中大约32微英寸的平均表面粗糙度。在一个方案中，适配器226进一步包含用于流动热传送流体经过的导管，从而控制适配器226的温度。
包含适配器226和护板201的组件还包括护板紧固系统234，用于使护板201与适配器226对齐并将护板201紧固到适配器226。护板紧固系统232包含多个销293，其沿着沿适配器226以圆或环形排列隔开并放置。在一个方案中，至少三个销293在适配器226上呈圆形排列。在另一实施方式中，使用12个销293。每个销293包含由材料诸如钢，例如不锈钢构造的刚性圆柱。每个销293在构件236的一端上具有压配入适配器226的压配连接器238。如在图3A中所示，销293穿过槽229。护板紧固系统232进一步包含多个紧固件230。在一个实施方式中，紧固件230可以为内六角螺钉236。螺钉236的头240凹入孔229的锥口孔中。螺钉236的端部穿入固定板297的螺纹孔295中。在一个实施方式中，至少三个螺钉236呈圆形设置以将适配器226固定到护板201。在另一实施方式中，使用12个螺钉297。
在支撑壁架219下方为围绕衬底支架130的底壁242。斜阶梯244从圆柱带214的底壁242径向向内延伸并且围绕衬底支架130。在一个方案中，斜阶梯244包含弧形接合点245。
U型沟道246接合到护板的斜阶梯244。U型沟道246具有外部第一腿部件299，其具有多个气体传导孔249，从而使工艺气体以改善的气体传导经过。U型沟道246还具有内部第二腿部件253，其与外部第一腿部件299隔开并且其高度大于外部第一腿部件299。在一个方案中，在外部腿部件299中的气孔249基本上为椭圆形并由圆柱(未示出)分离。在一个方案中，每个气孔249具有大约1到大约2英寸的宽度和大约0.2到大约0.8英寸的高度。
护板201允许来自工艺腔室100的气体以减小的阻力经过气孔249并且经过U型沟道246循环。护板201的设计进一步最小化气体传导对衬底支架130位置在高度方面的敏感性。
圆柱带214、支撑壁架219、护板201的斜阶梯244和U型沟道246包含由单块材料制成的单一结构。例如，整个护板201可由300号不锈钢制成，或者在一个方案中，由铝制成。单一的护板201与包括多个组件，通常由两块或三块分离片组成完整护板，其与现有护板相比是有优势的。例如在加热和冷却工艺中，单一片护板与多组件护板相比更加热均匀。例如，单一片护板201仅具有与适配器226的一个热界面，允许更好的控制护板201和适配器226之间的热交换。具有多个组件的护板使其更难以且更加费力去除护板用于清洗。单一片护板201具有暴露于溅射沉积物的连续表面，而没有更难以清除的界面或角落。在工艺循环期间，单一片护板201还更加有效地将腔室壁106与溅射沉积隔离开。
在一个方案中，利用可从California的Santa Clara的应用材料有限公司购得的CLEANCOATTM处理护板201的暴露表面。CLEANCOATTM是双线铝电弧喷涂，其应用到衬底处理腔室组件，诸如护板201，从而减少护板201上的沉积物的粒子脱落，并因而防止腔室100的衬底104的污染。在一个方案中，在护板上的双线铝电弧喷涂具有从大约600到大约2300微英寸的表面粗糙度。
护板201具有面向腔室100中的等离子体区域108的暴露表面。喷砂处理暴露的表面，以具有175±75微英寸的表面粗糙度。纹理化的喷砂处理的表面用于减少粒子脱落并防止腔室100内的污染。平均表面粗糙度为沿着暴露的表面距离粗糙特征的峰和谷的平均线的位移的绝对值的平均值。可通过表面光度仪或通过扫描电子显微镜确定粗糙度平均值、偏斜或其它性能，其中表面光度仪使针经过暴露表面上方并且产生表面上粗糙面高度的波动的痕迹，该扫描电子显微镜使用从表面反射的电子束以产生表面图像。
沉积环208包含环形带215，其在支架130的外围壁204周围延伸并围绕该支架130的外围壁204，如图2A中所示。环形带215包含内部唇缘250，其从带215横向延伸并且基本上平行于支架130的外围壁204。内部唇缘250在衬底104的悬臂边缘206下方立即终止。内部唇缘250限定沉积环208的内部周界，其中该沉积环208围绕衬底104和衬底支架130的外围以在处理期间保护不被衬底104覆盖的支架130的区域。例如，内部唇缘250围绕并至少部分覆盖支架130的外围壁204，其否则暴露于处理环境，从而减小或甚至全部排除溅射沉积物在外围壁204上的沉积。有利地，沉积环208可易于被去除以从环208的暴露表面清洗溅射沉积物，使得支架130不必为了清洗而被拆开。沉积环208还可用于包含支架130的暴露侧表面，以减小他们被受激等离子体物质的侵蚀。
在图2A中示出的方案中，沉积环208的环形带215具有半环形隆凸252，其沿着带215的中心部分延伸，该带215在半环形隆凸252每一侧上具有径向向内的斜面(dip)254a、b。径向向内的斜面254与覆盖环212隔开以在其之间形成弧形间隙256，其作为曲径(labyrinth)以减小等离子体物质渗透到弧形间隙256中。开口内部沟道258位于内部唇缘250和半环形隆凸252之间。开口内部沟道258径向向内延伸，以至少部分在衬底104的悬臂边缘206下方终止。开口内部沟道258有助于在沉积环208清洗期间从这些部分去除溅射沉积物。沉积环208还具有壁架260，其向外延伸并径向向半环形隆凸252的外部放置。壁架260用于支撑盖环212。
沉积环208可通过成形并加工陶瓷材料诸如氧化铝而制成。优选地，氧化铝具有大约99.5％的纯度以减少不期望的元素诸如铁对腔室100的污染。陶瓷材料使用传统的技术诸如等静压成型进行模制并烧结，之后使用适当的加工方法进行模式烧结预成型的加工以实现所需的形状和尺寸。
沉积环208的环形带215可包含喷砂处理的暴露表面。利用适当的粗砂尺寸执行喷砂处理，以实现预定的表面粗糙度。在一个方案中，利用双线铝电弧喷涂，诸如CLEANCOATTM处理沉积环208的表面，从而减小颗粒脱落和污染。
盖环212围绕并至少部分覆盖沉积环208，以容纳沉积环208并从而遮蔽沉积环208使其与溅射沉积物的块体隔开。盖环212由耐溅射等离子体的侵蚀的材料制成，例如，诸如不锈钢、钛或铝的金属材料或诸如氧化铝的陶瓷材料。在一个方案中，盖环212由具有至少大约99.9％纯度的钛组成。在一个方案中，利用利用双线铝电弧喷涂，诸如CLEANCOATTM处理盖环212的表面，从而减少颗粒从盖环212的表面脱落。
盖环212包含环形楔262，该楔包含倾斜的顶表面264，其径向向内倾斜并围绕衬底支架130。环形楔262的倾斜顶表面264具有内部和外部外围266、268。内部外围266包含覆盖径向向内斜面254a的凸起边270，该斜面254a包含沉积环208的开口内部沟道258。凸起边270相对于由沉积环208形成的弧形间隙256的至少大约一半宽度凸起一距离。凸起边270设计尺寸、形状并放置成与弧形间隙256协作且互补，以在盖环212和沉积环208之间形成回旋且压缩的流通道，其抑制工艺沉积物流到外围壁架204上。窄间隙256的压缩流通道限制低能量溅射沉积物在沉积环208和盖环212的接合面上的积累，其否则将使它们彼此粘结或使它们粘结到衬底104的外围悬臂边缘206上。结合与盖环212的凸起边270隔开以采集例如在铝溅射腔室中1540μm铝溅射沉积物的最小量，同时减少或甚至基本上排除两个环208、212接合面上的溅射沉积，从设计及在沉积悬臂边缘206下方延伸的沉积环208的开口内部沟道258。
倾斜顶表面264的外部外围268周围为球形隆凸。在一个方案中，球形隆凸272包含椭圆环形表面274，该椭圆环形表面274与护板201形成弧形间隙。倾斜顶表面264，与球形隆凸272和凸起边270协作，阻挡视距沉积退出工艺空腔108并进入腔室主体空腔。倾斜顶表面264可以从至少大约15度的角度倾斜。设计盖环212的倾斜顶表面264的角度，例如，以最小化最接近衬底104的悬臂边缘206的溅射沉积物的积累，其否则将不利地影响在整个衬底104上获得的沉积均匀性。
盖环212包含从环形楔262的倾斜顶表面264向下延伸的基脚(footing)276，以放置在沉积环208的壁架260上。基脚276从楔262向下延伸以压向沉积环208，而基本上不会破碎或破裂环208。
盖环212进一步包含从环形楔262向下延伸的内部和外部圆柱带278a、b，在这两个带之间具有间隙。在一个方案中，内部和外部圆柱带278a、b基本上垂直。圆柱带272a、b放置在楔262的基脚276径向向外处。内部圆柱带278a具有小于外部圆柱带278b的高度。典型地，外部带278b的高度至少为内部带278a高度的1.2倍。例如，对于具有大约154mm的内部半径的盖环212，外部带278b的高度是从大约15至大约35mm，例如25mm；并且内部带278a的高度为从大约12到大约24mm，例如大约19mm。
盖环212是可调整的并且有效地屏蔽在不同高度范围的传导孔249。例如，盖环212能提升和降低，以关于腔室中衬底支架130而调整盖环212的高度。
在护板201和盖环212之间的空间或间隙形成回旋的S型通道或，用于等离子体传输。通道的形状是有利的，例如，原因在于其阻碍并阻止等离子体物质进入到该区域中，减少溅射材料的不期望沉积。
如在图4和图5中所示，溅射靶140包含安装到背板284的溅射板280。溅射板280包含待被溅射到衬底104上的材料。溅射板280可具有中心圆柱台面286，其具有形成平行于衬底104表面的面的溅射表面139。环形倾斜边288围绕圆柱台面286。环形边288可相对于圆柱台面286倾斜至少大约8度的角度，例如从大约10度到大约20度。具有台阶292的外围倾斜侧壁290围绕环形边288。外围侧壁290可相对于圆柱台面286的面倾斜至少大约60度的角度，例如，从大约75度到大约85度。台阶292可在凸起294和凹槽296之间产生，并且台阶292从大约30度到大约40度的缩减(cutback)角度连接表面。
与腔室中100的护板201的顶壁216邻近的环形倾斜边288和侧壁290的复杂形状，形成回旋间隙300，其包含暗区；该区域高度耗尽自由电子并且其模拟为真空。重要地是控制暗区，以防止等离子体进入、电弧放电和不稳定性。间隙300的形状用作曲径，其阻止被溅射的等离子体物质经过间隙300，并从而减少被溅射沉积物积累在外围靶区域的表面上。在一个方案中，暗区的外围边界可利用例如CLEANCOATTM进行双线铝电弧喷涂处理，从而减少颗粒在该区域中脱落。
溅射板280包含金属或金属合成物。例如，溅射板280可以为金属，诸如例如铝、铜、钨、钛、钴、镍或钽。溅射板280还可以为金属合成物，诸如例如钽氮化物、钨氮化物或钛氮化物。
背板284，其具有支撑表面303以支撑溅射板280和延伸超过溅射板280的半径的外围壁架304。背板284由金属制成，诸如例如不锈钢、铝、铜-铬或铜-锌。背板284可以由具有足够高的热导率的材料制成，以耗散在靶140上产生的热量，其形成于溅射板280和背板284上。该热由在这些板280、284中产生的电流产生，并还由来自等离子体的高能离子轰击到靶140的溅射表面139而产生。较高热导率的背板284使在靶140中产生的热量耗散到周围结构或甚至耗散到热交换器，该热交换器安装在背板284后面或者在背板284自身中。例如，背板284可包含沟道(未示出)以循环在其中流动的热传送流体。已经确定背板284的适当高热导率为至少大约200W/mK，例如从大约220到大约400W/mK。通过更有效地耗散在靶140中产生的热，该热导率级别允许靶140被操作较长的工艺时间周期。
结合由具有高热导率和低电阻率的材料制成的背板284，或者分离地或自身，背板284可包含具有一个或多个凹槽(未示出)的背侧表面。例如，背板284可具有凹槽，诸如环形凹槽或凸脊(ridge)，用于冷却靶140的背侧141。凹槽和凸脊还可具有其它图案，例如，矩形栅格图案、鸡爪图案或在背侧表面上横穿的简单直线。
溅射板280利用扩散连接可安装在背板284上，通过将两个板280、284放置在彼此之上并将板280、284加热至适当的温度，典型地至少大约200摄氏度。可选地，溅射靶140可以为包含单片材料的单一结构，其具有足够的深度以用作溅射板和背板。
背板284的外围壁架304包含放置在腔室100中的绝缘体310上的基脚308(图2A-B和图3)。外围壁架304包含O-环凹槽3 12，在其中放置O-环314以形成真空密封。绝缘体310与腔室100电隔离并且将背板284与腔室100隔开，并且通常为由电介质或绝缘材料诸如氧化铝形成的环。外围壁架304设计形状以抑制被溅射材料和等离子体物质经过靶140和绝缘体310之间的间隙进行流动或迁移，从而阻止低角度被溅射沉积物渗透到间隙中。
靶140的外围壁架304利用保护涂层例如双线电弧喷涂铝涂层进行涂敷。在涂敷之前，外围壁架304被脱脂并利用碳化硅盘进行研磨，从而实现200到300微英寸的粗糙度。涂层延伸以覆盖溅射板280的外围侧壁290和背板284的外围壁架304。该涂层的最终表面粗糙度为从大约500到大约900微英寸，以及具有从大约5到大约10密耳(mil)的厚度。涂层保护靶140的边缘，并提供被溅射材料的更好粘结，并且减少材料从这些表面剥离。
溅射靶140连接到靶电源320，其施加相对于护板201的偏置电压到靶140，其中护板201在溅射工艺期间电浮动。虽然靶电源320供应功率到靶140、护板201、支架130和连接到靶电源320的其它腔室组件，但是气体激发器324激励溅射气体以形成溅射气体的等离子体。气体激发器324可包含通过施加经过线圈326的电流被激励的源线圈326。所形成的等离子体积极地撞击并轰击靶140的溅射表面139，以从表面139溅射出材料到衬底104上。
腔室100可包含磁场产生器330以成形围绕靶140的磁场，从而改善靶140的溅射。电容性产生的等离子体可通过磁场产生器330增强，其中例如，永磁或电磁线圈可提供具有旋转磁场的腔室100中的磁场，该旋转磁场具有平行于衬底104的面旋转的轴。腔室100可，另外或可选地，包含磁场产生器330，其在腔室100的靶140附近产生磁场，以增加靶140附近的高密度等离子体区域中的离子密度，从而改善靶140材料的溅射。改善的磁场产生器330可用于使铜持续自溅射或使铝、钛或其它金属溅射；虽然最小化了靶轰击对非活性气体的需求，例如，如在授权给Fu且题目为“Rotating Sputter MagnetronAssembly”美国专利No.6,183,614以及授权给Goparlraja等人且题目为“Integrated Process for Copper Via Filling”的美国专利No.6,274,008中进行了描述。磁场延伸经过基本上非磁性靶140并进入到腔室100中。
溅射气体通过气体传输系统332而引入到腔室100中，其中气体传输系统332经由具有气流控制阀338诸如质量流量控制器的导管336而提供来自气体供应334的气体，以传送设定流速的气体经过。气体被输送到混合歧管(未示出)，在该歧管中气体被混合以形成期望的工艺气体合成物并被供应到具有气体入口的气体分配器340，以将气体引入到腔室100中。工艺气体可包含非活性气体，诸如氩或氙，其能积极撞击靶140并从靶140溅射出材料。工艺气体还可包含活性气体，诸如含氧气体和含氮气体的一种或多种，其能与溅射材料反应，从而在衬底104上形成层。然后，气体通过气体激发器324被激励以形成等离子体，从而对溅射靶140进行溅射。废工艺气体和副产物从腔室100通过排气装置342被排出。排气装置342包含排气口344，该排气口接收废工艺气体并传送废气到具有用于控制腔室100中气体压力的节流阀的排气导管346。排气导管346连接到一个或多个排气泵348。典型地，腔室100中溅射气体的压力被设定至低于大气压级别，诸如真空环境，例如，1毫托至400毫托的气压。
腔室100可通过包含程序代码的控制器350进行控制，该程序代码具有指令集以操作腔室100的组件，从而处理衬底104。例如，控制器350可包含包括衬底定位指令集的程序代码，以操作衬底支架130和衬底传送机构；用于操作气流控制阀的气流控制指令集，以设定到腔室100的溅射气体流速；用于操作排气节流阀的气压控制指令集，以保持腔室100中的压力；用于操作气体激发器324的气体激发器控制指令集，以设定气体激发功率级别；稳定控制指令集，以控制支架130或壁106中的温度控制系统，以设定腔室100中各种组件的温度；以及工艺监控指令集，以监控腔室100中的工艺。
参照图4描述溅射腔室400的另一方案。该腔室400可以为，例如，但是不限于，可从California的Santa Clara的应用材料有限公司购得的VERSATTNTM腔室。腔室400具有溅射靶140，用于将被溅射的材料沉积到衬底104上。溅射靶140与面对溅射靶140的底座406相对而放置。衬底支架404可由诸如例如不锈钢的材料构造。电阻加热器409可嵌入到底座406内，并用于加热底座406上的衬底104。溅射靶140和衬底支架404由护板201围绕。盖环212放置在衬底支架404周围，并且由沉积环208支撑。沉积环208包含放置在底座406的容纳表面上的圆盘410。圆盘410的直径小于底座406的容纳表面408的直径。沉积环208进一步包含围绕圆盘410的环形楔412。圆柱带414水平并从环形楔412向内延伸。环形楔412具有放置在衬底支架404的底座406上的基脚416。腔室400还具有气体分配器418、气体激发器420和排气装置422。
以上描述的工艺配件200显著地增加了工艺循环的数量和腔室100中的处理时间，增加了清洗之间的时间量。这通过减小形成于衬底104周围的组件上的溅射沉积物量来完成，其难以清洗。设计工艺配件的组件，以允许溅射区域108中增加的功率和压力，从而通过降低回旋间隙300的暗区中的温度而产生更高的沉积产量。这还利用适配器226改善了护板201的热均匀性。另外，与退出工艺配件相比，工艺配件200设计成允许在配件被改变以及维修周期执行之前，至少大约2至大约5倍的更多沉积物沉积在其上。这在腔室100的正常运行时间方面是显著的改善并且还增加了工艺产量。
参照本发明的特定优选方案描述了本发明，然而，其它方案也是可能的。例如，可在其它类型的应用中使用本发明的工艺配件200或组件和适配器226，这对于本领域的普通技术人员是显而易见的，例如应用于蚀刻、CVD和蚀刻腔室中。因此，附属的权利要求的精神和范围不应该限于在此包含的优选方案的描述。
Claims (16)
1.一种护板，其在衬底处理腔室中用于围绕面对衬底支架的溅射靶，所述护板包含：
(a)圆柱带，其具有围绕溅射靶的顶壁和围绕衬底支架的底壁；
(b)支撑壁架，其从圆柱带的顶壁径向向外延伸；
(c)倾斜阶梯，其从圆柱带的底壁径向向内延伸；以及
(d)U型沟道，其接合到倾斜阶梯，并且该沟道围绕衬底支架，该U型沟道包含第一和第二腿部件；第一腿部件具有多个气孔以允许工艺气体经过，从而该气孔提供升高的气体传导。
2.根据权利要求1所述的护板，其特征在于，在所述第一腿部件中的所述气孔基本呈椭圆形。
3.根据权利要求2所述的护板，其特征在于，所述气孔具有从2.54到5.08cm的宽度，以及从0.51到2.03cm的高度。
4.根据权利要求1所述的护板，其特征在于，所述倾斜阶梯包含弧形接合点。
5.根据权利要求1所述的护板，其特征在于，所述U型沟道的所述第一腿部件的高度大于所述第二腿部件。
6.根据权利要求1所述的护板，其特征在于，包含由铝组成的整体结构。
7.根据权利要求6所述的护板，其特征在于，包含在所述护板表面上的双线铝电弧喷涂涂层。
8.根据权利要求7所述的护板，其特征在于，所述双线铝电弧喷涂涂层包含从600到2300微英寸的表面粗糙度。
9.根据权利要求1所述的护板，其特征在于，所述支撑壁架包含支持表面和在该表面中的多个槽。
10.一种组件，其包含适配器和根据权利要求9所述的护板，其特征在于，所述适配器包含与所述护板的支撑壁架的支持表面接触的接触表面，以支撑所述护板并提供之间的良好热传导。
11.根据权利要求10所述的组件，其特征在于，进一步包含用于将所述护板与所述适配器对齐的排列销系统，该排列销系统包含在所述适配器上的圆形排列中隔开的多个销，每个销包含刚性构件，该刚性构件具有压配入所述适配器中的压配连接器和啮合到所述护板的支撑壁架上的多个槽的其中之一中的头。
12.根据权利要求10所述的组件，其特征在于，所述护板的支持表面和所述适配器的接触表面每个都具有从600到2300微英寸的表面粗糙度。
13.根据权利要求10所述的组件，其特征在于，包含用于流动热传送流体的导管。
14.一种工艺配件，放置在衬底处理腔室中的溅射靶和衬底支架周围，所述工艺配件包含：
(a)围绕所述溅射靶的护板，所述护板包含：
(1)围绕所述溅射靶和衬底支架的圆柱带；
(2)从所述圆柱带径向向外延伸的支撑壁架；
(3)在所述支撑壁架下方并且从所述圆柱带径向向内延伸的倾斜阶梯；以及
(4)U型沟道，其接合到所述倾斜阶梯并且围绕所述衬底支架，该U型沟道包含第一和第二腿部件，所述第一腿部件具有多个气孔，从而使工艺气体以升高的气体传导经过；以及
(b)环组件，其包含：
(1)在所述衬底支架周围的盖环，所述盖环包含：含有在所述衬底支架周围的倾斜顶表面的环形楔，所述倾斜顶表面具有内部和外部外围；在所述倾斜顶表面的外部外围周围的球形隆凸；从所述倾斜顶表面向下延伸以放置在所述沉积环上的基脚；在所述倾斜顶表面的内部外围周围的凸起边；从所述环形楔向下延伸的内部和外部圆柱带，所述内部圆柱带的高度比所述外部圆柱带小；以及
(2)支撑所述盖环的沉积环。
15.根据权利要求14所述的工艺配件，其特征在于，所述护板、盖环和沉积环的每一个都包含具有双线铝电弧喷涂涂层的暴露表面。
16.一种溅射腔室，其包含：
(a)溅射靶，其用于将溅射材料沉积到衬底上；
(b)在衬底支架周围的盖环；
(c)根据权利要求1所述的护板；
(d)在所述衬底支架周围的盖环；
(e)支撑所述盖环的沉积环；所述沉积环包含放置在所述底座的容纳表面上的圆盘和围绕所述圆盘的环形楔，所述环形楔包含从所述环形楔向内延伸的圆柱带，以及放置在所述底座上的基脚；
(f)气体分配器，以将气体引入到所述腔室中；
(g)气体激发器，以激发气体，从而形成等离子体，以溅射所述溅射靶；以及
(h)排气装置，以从所述腔室排出气体。
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-
2007
- 2007-01-29 US US11/668,461 patent/US7981262B2/en not_active Expired - Fee Related
-
2008
- 2008-01-25 SG SG200800703-1A patent/SG144872A1/en unknown
- 2008-01-28 KR KR1020080008591A patent/KR100945608B1/ko active IP Right Grant
- 2008-01-28 JP JP2008016967A patent/JP5563197B2/ja active Active
- 2008-01-29 TW TW097103311A patent/TWI419198B/zh active
- 2008-01-29 CN CN2008100042992A patent/CN101235482B/zh active Active
- 2008-01-29 CN CN2010101385164A patent/CN101787519B/zh active Active
- 2008-01-29 EP EP08001647A patent/EP1953798A3/en not_active Withdrawn
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2014
- 2014-04-23 JP JP2014088675A patent/JP5849124B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN101235482A (zh) | 2008-08-06 |
| JP5563197B2 (ja) | 2014-07-30 |
| JP2014196563A (ja) | 2014-10-16 |
| US20080178801A1 (en) | 2008-07-31 |
| CN101787519A (zh) | 2010-07-28 |
| JP2008261047A (ja) | 2008-10-30 |
| EP1953798A3 (en) | 2010-07-21 |
| US7981262B2 (en) | 2011-07-19 |
| EP1953798A2 (en) | 2008-08-06 |
| CN101787519B (zh) | 2012-11-14 |
| TWI419198B (zh) | 2013-12-11 |
| KR100945608B1 (ko) | 2010-03-04 |
| JP5849124B2 (ja) | 2016-01-27 |
| KR20080071090A (ko) | 2008-08-01 |
| TW200845092A (en) | 2008-11-16 |
| SG144872A1 (en) | 2008-08-28 |
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