CN101243551A - 一种新型晶片处理方法 - Google Patents
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Abstract
在接近和高于385℃的温度时,金可以扩散进入硅中以及扩散进入一些接触材料中。然而金是一种优良的材料,因为其耐腐蚀、有电传导性以及高可靠性。使用粘附层以及从接触的周围和上面的接触区域移除金,允许微型机电系统器件或半导体经历高于385℃的温度而不冒金扩散的风险。消除金扩散的风险以允许进一步升高的温度处理。将器件衬底键合到载体衬底可以是一升高的温度的工艺。
Description
技术领域
实施例涉及半导体处理、传感器和微型机电系统(MEMS)领域。实施例还涉及制造金衬垫,其能经受例如将器件衬底键合到载体衬底的那些键合操作中遇到的高温。
背景技术
例如压力传感器的微结构产品,可以通过半导体晶片处理技术或MEMS处理技术生产,以下称作MEMS处理。该微结构产品可以利用通用的和公知的MEMS处理技术安装在器件衬底上。经常需要的另外一个步骤是将器件衬底键合到装卸衬底。而且,由于金的高可靠性和低腐蚀特性而经常使用金衬垫或金互连电路。但是金和硅具有大约377-385℃的共晶熔点且键合操作经常超过该温度。
本领域技术人员熟知的晶片处理技术可以用于将器件安装在器件衬底上。MEMS处理是一种一步接着另一步的渐进式工艺,其中最后一步是形成接触。
标记为“现有技术”的图4中阐述的是具有钝化层103和接触102的器件衬底101。该钝化层103通常是二氧化硅层,通常简称为“氧化物”。该钝化层103也可以是氮化硅,通常简称为“氮化物”。该接触触头)102是一电接触,其是微电路或MEMS器件施加电流或电压的部分。除了该接触102,图4没有展示MEMS器件元件或任何微电路元件。那些熟知MEMS的本领域技术人员熟悉导致和包括形成接触的工艺步骤。而且,他们知道许多各式的典型地存在于具有接触102的器件衬底上的器件和电路。作为典型的接触材料的实例,接触102可以由硅化铂(PtSi)构成。
标记为“现有技术”的图5阐述的是具有接触102、钝化层103和粘附层104的器件衬底101。可以通过对图4中的器件沉积一材料层以形成该粘附层而制造阐述于图5中的该结构。那些熟知MEMS的本领域技术人员知道许多在衬底上沉积材料层的方法。该粘附层104可以由钨化钛(TiW)或类似材料构成。
标记为“现有技术”的图6阐述的是具有接触102、钝化层103、粘附层104和金层105的器件衬底101。可以通过在图5中的器件的粘附层之上沉积一金层而制造阐述于图6中的该结构。
标记为“现有技术”的图7阐述的是具有接触102、钝化层103、粘附层104和金层105的经图案化之后的器件衬底101。可以通过图案化图6的粘附层104和金层105而形成图7的结构。实际上,金层105不完全覆盖粘附层104是MEMS工艺的一个标准要素,其并不特别,但应当注意。
为了运用金层的特性,在器件衬底之上制造类似于图7中阐述的结构。然而,图案化之后,金层103残留在接触102上。粘附层104中的针孔缺陷为金扩散进下层接触提供了机会。如果粘附层104中存在针孔缺陷或其他缺陷,则金将与下层接触材料102物理接触。
金和硅的共晶熔点大约为385℃,其是接触下层硅接触的金实际上开始熔化的温度。如果金熔进此接触,则金将扩散进该硅器件衬底,并且发生制造缺陷而导致制造失效。如上所述,粘附层,也称作阻挡层,其在金层和下层衬底或接触之间,通常用作预防这种现象的发生,但是这些层会有针孔缺陷。金可以通过针孔缺陷扩散进下层接触或扩散进衬底。而且,在许多典型的晶片工艺中,通过确保晶片不超过金-硅共晶温度(即,大约377-385℃)来避免这种失效方式。
在MEMS工艺中,硅(Si)晶片通常用作器件衬底。那些熟知MEMS工艺的本领域技术人员知道经常需要装卸衬底用于机械隔离或其他目的。这种装卸衬底通常是硅晶片或玻璃晶片。许多技术可以用于将器件衬底键合到装卸衬底。其中三种技术是阳极焊接、玻璃粉焊接和共晶焊接。
在阳极焊接中,可以在大约300℃直到接近500℃下,通过在两金属电极之间放置且固定衬底而键合衬底。高直流(DC)电压施加到电极间以产生贯穿衬底的电场。如果装卸衬底是包含钠离子的玻璃,则在高温下,钠离子通过施加的电场而从玻璃的键合表面转移。在玻璃表面附近的钠离子的耗散使得该表面与器件衬底的硅表面高度反应。高度的反应导致了两个衬底之间的固体化学键。
在玻璃粉焊接中,粘性玻璃材料涂敷在将要键合的晶片的一面或者两面。有时热处理这种玻璃料以驱散溶剂和粘附剂。之后如果必要的话,将晶片对准并结合。之后,晶片在压力下固定并在400℃到550℃的典型温度范围内加热。玻璃粉流动并键合到两个表面。
在共晶焊接中,用两种成分的共晶焊接系统中的第一成分覆盖一个衬底,并且用第二成分覆盖另一衬底。衬底被加热并使其接触。扩散发生在界面并形成一种合金。相比其在两侧上的材料,在界面处的共晶成分合金具有较低的熔点,且因此熔化局限于一个薄层。就是这个熔化的共晶层形成键合。
所有这些晶片焊接技术所使用的温度都高于金-硅共晶的温度,但也不至于过高而毁坏或破坏制造的电路。标记为“现有技术”的图8阐述的是利用粘合剂802将器件衬底101和装卸衬底801键合到一起。
实施例的各方面直接致力于解决现有技术的缺陷,其通过使金层105不覆盖接触102而图案化金层105。
发明内容
因此实施例的一个方面是选择一种器件衬底以及利用直到形成接触的步骤的微型机电系统(MEMS)工艺技术处理该器件衬底。可以形成一个以上的接触。该接触由例如硅化铂的电传导材料制造。而且,接触的形成通常包括移除例如氧化层或氮化层的绝缘层,该绝缘层是覆盖任意希望形成接触的区域。
实施例的另一方面是在器件衬底上沉积一粘附层且之后沉积一金层。例如钨或钽的难熔金属可以用作粘附层。钨化钛(TiW)是也可以用作粘附层的公知且常用的材料。
实施例的又一方面是图案化金层和粘附层,因为上述两种层都是电传导的。上述层的图案化的失败将导致所有接触彼此电连接。而且,从接触区域移除金层以便后续的高温不会导致金扩散进接触。
某个实施例的一个方面是在图案化金层和粘附层之后,将器件衬底键合到装卸衬底。许多焊接工艺要求的温度高于385℃。阳极焊接、玻璃粉焊接和共晶焊接是可以应用于键合该两个衬底在一起的焊接工艺的实例。依照公开于此的实施例而适当地图案化金层可以确保金不会扩散进接触。
附图说明
贯穿各个图示,附图中相同的附图标记代表相同或功能上相似的元件,且其并入并构成说明书的一部分,而且附图阐述实施例和详细描述,用于解释公开于此的实施例。
图1阐述具有接触、钝化层、粘附层和图案化之后的金层的器件衬底;
图2阐述具有接触区域、图案化钝化层、图案化粘附层和图案化金层的器件衬底的顶视图;
图3阐述制造具有接触区域、图案化钝化层、图案化粘附层和图案化金层的器件衬底的高级流程图;
标记为“现有技术”的图4阐述具有钝化层和接触的器件衬底;
标记为“现有技术”的图5阐述具有接触、钝化层和粘附层的器件衬底;
标记为“现有技术”的图6阐述具有接触、钝化层、粘附层和金层的器件衬底;
标记为“现有技术”的图7阐述具有接触、钝化层、粘附层和图案化之后的金层的器件衬底;以及
标记为“现有技术”的图8阐述通过焊接而键合到一起的器件衬底和装卸衬底。
具体实施方式
这些非限定性实例中讨论的特殊数值和构造可以改变且引证仅仅为了阐述至少一个实施例,并不能理解为对发明范围的限制。
图1阐述一种具有接触102、钝化层103、粘附层104和图案化之后的金层105的器件衬底101。对比阐述于图1和6中的结构,可以发现图1中接触102的上面没有金。熟知微型机电系统(MEMS)工艺的本领域技术人员熟悉用于制造图7的结构的技术。考虑公开于此的实施例的方面,熟知微型机电系统(MEMS)工艺的本领域技术人员可以用这种技术制造图1中阐述的结构。
图2阐述具有接触区域201、图案化钝化层103、图案化粘附层104和图案化金层105的器件衬底101的顶视图。图1是该结构的侧视图,且图2是该相同结构的顶视图。开口201比接触102稍大,因为接触那里不能存在任何金。其通过用于图案化金属层104和105的光掩模设计而实现,而用于图案化金属层104和105的光掩模设计是本领域技术人员众所周知的。MEMS工艺的制造公差导致接触区域,该接触区域没有金,稍大于接触102。而且,不能有非常接近接触的金,那样的话金可能通过粘附层中的针孔缺陷扩散进接触。图2所示的接触102,因为粘附层足够薄,即使其位于粘附层104的下面,该下层接触也是可见的。
图3阐述制造具有开口201、图案化钝化层103、图案化粘附层104和图案化金层105的器件衬底101的高级流程图。开始步骤301之后,是选择器件衬底302以及通过接触形成303处理衬底。接着,是粘附层的沉积304和金层的沉积305。金层的图案化306之后是粘附层的图案化307。图案化金层包括从开口201移除金,之后处理完成308或在典型制造中完成进一步工艺。在这一步,就已经制造了可以禁受高温而不使金扩散进接触或衬底的器件衬底。现在,例如在高温下将器件衬底键合到装卸衬底的进一步工艺能够安全的实施了。
那些熟悉半导体工艺的技术人员可以意识到,即使在接触区域上没有金,在金互连金属105和接触102(典型为上文所述的硅化铂)之间仍然具有良好的电接触。这通过粘附金属层104实现,因为该粘附层也是一种电传导材料。换言之,金层105电连接到粘附层104,该粘附层104依次与接触102电连接。
可以意识到,上述公开的以及其另外的特征和功能,或者替换的变化,可以适当地组合到许多其他不同的系统或应用中。本领域技术人员也可以接着对其做多种目前意想不到的或不曾预料的替换、修改、变化或改进,也意味着其包含在下列权利要求中。
Claims (10)
1、一种方法,包括:
选择一器件衬底并处理该器件衬底,直到利用接触材料形成接触的步骤;
在该接触和其他区域上沉积一粘附金属以制造一粘附层以及在该粘附层上沉积金以制造一金层;以及
图案化该金层以从该接触区域移除金以及图案化该粘附层以便该粘附层保留在该接触区域上;由此在器件衬底上制造至少一个具有能够禁受大于375℃温度的金接触的半导体或微型机电系统器件。
2、权利要求1的方法,其中该接触材料包括硅化铂。
3、权利要求1的方法,其中该粘附层包括钨化钛。
4、一种方法,包括:
选择一器件衬底并处理该器件衬底,直到利用接触材料形成接触的步骤;
在该接触和其他区域上沉积一粘附金属以制造一粘附层以及在该粘附层上沉积金以制造一金层;
图案化该金层以从该接触区域移除金以及图案化该粘附层以便该粘附层保留在该接触区域上;以及
将该器件衬底键合到装卸衬底,由此在与装卸衬底键合的器件衬底上制造至少一个半导体或微型机电系统器件。
5、权利要求4的方法,其中该接触材料包括硅化铂。
6、权利要求5的方法,其中该粘附层包括钨化钛。
7、一种系统,包括:
一种器件衬底,通过半导体工艺在其上生成至少一个器件和至少一个接触,其中该至少一个接触包括一种接触材料;
一个粘附层沉积在该接触和该接触区域上,其中该接触区域是围绕该接触的区域;以及
一个金层覆盖该粘附层的大部分区域,但是不覆盖该接触区域中的该粘附层。
8、权利要求14的系统,其中该接触包括硅化铂。
9、权利要求14的系统,其中该粘附层包括钨化钛。
10、权利要求14的系统,进一步包括一装卸衬底以及一个将该装卸衬底粘合到该器件衬底的粘合剂。
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US11/208,178 US7531426B2 (en) | 2005-08-19 | 2005-08-19 | Approach to high temperature wafer processing |
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PCT/US2006/032289 WO2007024667A1 (en) | 2005-08-19 | 2006-08-18 | A novel approach for high temperature wafer processing |
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