CN101271834A - 器件制造方法 - Google Patents

器件制造方法 Download PDF

Info

Publication number
CN101271834A
CN101271834A CNA200810086849XA CN200810086849A CN101271834A CN 101271834 A CN101271834 A CN 101271834A CN A200810086849X A CNA200810086849X A CN A200810086849XA CN 200810086849 A CN200810086849 A CN 200810086849A CN 101271834 A CN101271834 A CN 101271834A
Authority
CN
China
Prior art keywords
mentioned
wafer
bonding film
cutting
laser processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CNA200810086849XA
Other languages
English (en)
Other versions
CN101271834B (zh
Inventor
关家一马
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Disco Corp
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of CN101271834A publication Critical patent/CN101271834A/zh
Application granted granted Critical
Publication of CN101271834B publication Critical patent/CN101271834B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/362—Laser etching
    • B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/16—Composite materials, e.g. fibre reinforced
    • B23K2103/166—Multilayered materials
    • B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/30—Organic material
    • B23K2103/42—Plastics
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/0665—Epoxy resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

Abstract

本发明提供一种器件制造方法，即使是厚度在100μm以下的薄晶片，也可没有破损地制造出在背面装有粘接膜的分割成一个一个的器件。提供一种器件制造方法，将在表面上形成有器件的、厚度在100μm以下的晶片，沿分割预定线分割成一个个器件，并在器件的背面安装管芯焊接用的粘接膜，该方法包括：晶片支撑工序，在晶片的背面安装粘接膜并将该粘接膜侧粘贴到切割带的表面上；激光加工工序，沿着晶片的分割预定线对晶片照射具有吸收性的波长的脉冲激光光线，将晶片分割成一个个器件并且将该粘接膜切断；和拾取工序，在激光加工工序后，使切割带扩展，使分割成一个一个的各器件间的间隙扩大，将在背面安装有粘接膜的器件从切割带剥离并进行拾取。

Description

器件制造方法
技术领域
本发明涉及器件制造方法，其将晶片沿分割预定线分割成一个个器件，并且在各器件的背面安装管芯焊接用的粘接膜，其中上述晶片在表面上在由形成为格子状的分割预定线划分而成的多个区域中形成有器件。
背景技术
例如，在半导体器件制造工序中，在大致为圆板形状的半导体晶片的表面上，在通过形成为格子状的间隔道(分割预定线)划分而成的多个区域中，形成IC(Integrated Circuit：集成电路)、LSI(large scaleintegration：大规模集成电路)等器件，通过将形成有该器件的各区域沿分割预定线进行分割，来制造出一个个的器件。作为分割半导体晶片的分割装置，通常使用被称为切割装置的切削装置，该切削装置用厚度为40μm左右的切削刀具对半导体晶片沿分割预定线进行切削。如此分割出的器件被封装并在移动电话和个人计算机等电气设备中广泛使用。
分割成一个一个的器件在其背面安装有由环氧树脂等形成的厚度为70～80μm的称为芯片黏着膜(ダイアタツチフイルム)的管芯焊接用的粘接膜，并隔着该粘接膜通过加热而焊接在支撑器件的管芯焊接框架上。作为在器件的背面安装管芯焊接用的粘接膜的方法，在半导体晶片的背面上粘贴粘接膜，并隔着该粘接膜将半导体晶片粘贴在切割带上，然后沿着在半导体晶片的表面上形成的分割预定线通过切削刀具将粘接膜与半导体晶片一起切断，从而形成在背面安装有粘接膜的器件。(例如，参照专利文献1。)
专利文献1：日本特开2000-182995号公报
然而，如果晶片的厚度薄至100μm以下，则当在晶片的背面粘贴粘接膜并利用切削刀具进行切削时，存在切断后的器件在粘接膜上跳动、因高速旋转的切削刀具的冲击而破损的问题。
发明内容
本发明鉴于上述事实而完成，其主要技术课题是提供这样的器件制造方法：即使是厚度在100μm以下的薄晶片，也可没有破损地制造出在背面安装有粘接膜的分割成一个一个的器件。
为解决上述主要技术课题，根据本发明，提供一种器件制造方法，其将晶片沿分割预定线分割成一个个器件，并且在上述器件的背面安装管芯焊接用的粘接膜，其中上述晶片在表面上在由形成为格子状的分割预定线划分而成的多个区域中形成有器件，并且上述晶片的厚度在100μm以下，其特征在于，上述器件制造方法包括以下工序：
晶片支撑工序，在晶片的背面安装粘接膜，并且将上述粘接膜侧粘贴到安装于环状框架的切割带的表面上；
激光加工工序，沿着将上述粘接膜侧粘贴在上述切割带上的晶片的分割预定线，对晶片照射具有吸收性的波长的脉冲激光光线，将晶片分割成一个个器件，并且将上述粘接膜切断；以及
拾取工序，在实施上述激光加工工序之后，使上述切割带扩展，使分割成一个一个的各器件间的间隙扩大，将在背面安装有上述粘接膜的器件从上述切割带剥离并进行拾取。
优选的是：在上述激光加工工序中对粘接膜进行残留一部分切削剩余部的不完全切断。
此外，上述激光加工工序照射波长在370nm以下的脉冲激光光线。
当在上述激光加工工序中对粘接膜进行了残留一部分切削剩余部的不完全切断的情况下，优选的是：在上述拾取工序中，在将粘接膜冷却以使伸缩性降低后，扩展切割带。
根据本发明，在激光加工工序中，沿着将粘接膜侧粘贴在切割带上的晶片的分割预定线，对晶片照射具有吸收性的波长的脉冲激光光线，将晶片分割成一个个器件，并且将该粘接膜切断，在该激光加工工序中，由于不会如通过切削装置将晶片切断那样有高速旋转的切削刀具与分割出的器件接触，所以器件不会在粘接膜上跳动，因此即使晶片的厚度在100μm以下也不会损伤器件。
附图说明
图1是表示作为晶片的半导体晶片的立体图。
图2是表示本发明的器件制造方法中的粘接膜安装工序的说明图。
图3是表示本发明的器件制造方法中的晶片支撑工序的立体图。
图4是表示本发明的器件制造方法中的粘接膜安装工序及晶片支撑工序的其它实施方式的说明图。
图5是用于实施本发明的器件制造方法中的激光加工工序的激光加工装置的主要部分立体图。
图6是表示使用图5所示的激光加工装置来实施本发明的器件制造方法中的激光加工工序的状态的说明图。
图7是实施了图6所示的激光加工工序的半导体晶片的放大剖面图。
图8是用于实施本发明的器件制造方法中的拾取工序的拾取装置的立体图。
图9是表示本发明的器件制造方法中的拾取工序的带扩展工序的说明图。
图10是本发明的器件制造方法中的拾取工序的说明图。
标号说明
2：半导体晶片；21：分割预定线；22：器件；40：切割带；5：激光加工装置；51：激光加工装置的卡盘工作台；52：激光光线照射构件；522：聚光器；6：拾取扩展装置；61：基座；62：第一工作台；63：第二工作台；64：第一移动构件；65：第二移动构件；66：框架保持构件；67：带扩展构件；68：转动构件；7：检测构件；8：拾取构件；F：环状框架；T：切割带。
具体实施方式
下面参照附图来对本发明的在晶片上粘贴的粘接膜的断裂方法的优选实施方式进行详细说明。
在图1中，表示了作为晶片的半导体晶片的立体图。图1所示的半导体晶片2例如由厚度为80μm的硅晶片构成，在表面2a上呈格子状地形成有多条分割预定线21。而且，在半导体晶片2的表面2a上，在由形成为格子状的多条分割预定线21划分而成的多个区域中形成有IC、LSI等器件22。
在上述半导体晶片2的背面2b上，如图2(a)及(b)所示那样安装管芯焊接用的粘接膜3(粘接膜安装工序)。此时，在80～200℃的温度下进行加热，并同时将粘接膜3按压安装到半导体晶片2的背面2b上。再有，粘接膜3在图示实施方式中由环氧系树脂构成，其厚度形成为80μm。
在实施粘接膜安装工序之后，如图3(a)及(b)所示那样在切割带T的表面上粘贴半导体晶片2的粘接膜3侧，其中上述切割带T以覆盖环状框架F的内侧开口部的方式安装外周部(晶片支撑工序)。再有，上述切割带T在图示实施方式中是在厚度为80μm的由聚氯乙烯(PVC)构成的片基材的表面上涂抹了厚度5μm左右的丙烯树脂系的粘接层。
参照图4来对上述粘接膜安装工序及晶片支撑工序的其它实施方式进行说明。
图4所示的实施方式使用在切割带的表面上预先粘贴有粘接膜的带粘接膜的切割带。即，如图4(a)及(b)所示，切割带T以覆盖环状框架F的内侧开口部的方式安装外周部，将粘贴在该切割带T的表面上的粘接膜3安装到半导体晶片2的背面2b上。此时，在80～200℃的温度下进行加热，并同时将粘接膜3按压安装到半导体晶片2的背面2b上。再有，带粘接膜的切割带可使用株式会社リンテツク制造的带粘接膜的切割带(LE5000)。
在实施上述的晶片支撑工序之后，实施这样的激光加工工序：沿着将粘接膜侧粘贴在切割带上的晶片的分割预定线，对晶片照射具有吸收性的波长的脉冲激光光线，将晶片分割成一个个器件，并且切断粘接膜。该激光加工工序使用图5所示的激光加工装置5来实施。图5所示的激光加工装置5具有：保持被加工物的卡盘工作台51；向保持在该卡盘工作台51上的被加工物照射激光光线的激光光线照射构件52；以及对保持在卡盘工作台51上的被加工物进行摄像的摄像构件53。卡盘工作台51构成为吸附保持被加工物，其通过未图示的移动机构在图5中在箭头X所示的加工进给方向和箭头Y所示的分度进给方向上移动。
上述激光光线照射构件52包括实质上水平配置的圆筒形状的壳体521。在壳体521内配置了脉冲激光光线振荡构件，该脉冲激光光线振荡构件具有由未图示的YAG激光振荡器或YVO4激光振荡器构成的脉冲激光光线振荡器和重复频率设定构件。在上述壳体521的前端部，安装有聚光器522，该聚光器522用于对从脉冲激光光线振荡构件振荡出的脉冲激光光线进行会聚。摄像构件53安装在构成激光光线照射构件52的壳体521的前端部，该摄像构件53在图示实施方式中由利用可视光线进行摄像的普通摄像元件(CCD：Charge-Coupled Device，电荷耦合器件)等构成，摄像构件53将摄像得到的图像信号发送给未图示的控制构件。
参照图5至图7，来对激光加工工序进行说明，在该激光加工工序中，使用上述激光加工装置5，将如上述图3及图4所示那样将粘接膜3侧粘贴在切割带T上的晶片2，沿分割预定线21按照每个器件分割开，并且将粘接膜3切断。
首先，在上述图5所示的激光加工装置5的卡盘工作台51上载置粘贴了半导体晶片2的粘接膜3侧的切割带T。然后，通过使未图示的吸附构件工作，来隔着切割带T将半导体晶片2保持在卡盘工作台51上。再有，虽然在图5中省略了安装有切割带T的环状框架F来进行表示，但环状框架F由配设在卡盘工作台51上的适当的框架保持构件保持。吸附保持有半导体晶片2的卡盘工作台51通过未图示的移动机构而定位到摄像构件53的正下方。
当卡盘工作台51定位于摄像构件53的正下方时，通过摄像构件53和未图示的控制构件来执行检测半导体晶片2的应进行激光加工的加工区域的对准作业。即，摄像构件53和未图示的控制构件执行图案匹配等图像处理，完成激光光线照射位置的对准(对准工序)，其中上述图案匹配等图像处理用于对形成在晶片2的预定方向上的分割预定线21和沿着分割预定线21照射激光光线的激光光线照射构件52的聚光器522进行对位。此外，对于形成在半导体晶片2上的与上述预定方向成直角地延伸的分割预定线21，也同样地完成激光光线照射位置的对准。
如上述那样检测分割预定线21来进行激光光线照射位置的对准，其中上述分割预定线21形成在保持于卡盘工作台51的半导体晶片2上，之后，如图6所示那样使卡盘工作台51向激光光线照射构件52的聚光器522所处的激光光线照射区域移动，使预定的分割预定线21的一端(图6中的左端)定位于激光光线照射构件52的聚光器522的正下方。然后，从聚光器522对硅晶片照射具有吸收性的波长的脉冲激光光线，并同时使卡盘工作台51向图6中箭头X1所示的方向以预定的加工进给速度移动(激光加工工序)。然后，在激光光线照射构件52的聚光器522的照射位置到达分割预定线21的另一端(图6中的右端)之后，停止脉冲激光光线的照射，并且停止卡盘工作台51的移动。再有，作为相对于硅晶片具有吸收性的波长的脉冲激光光线，优选为波长在370nm以下的紫外光的脉冲激光光线，特别是波长为266nm的脉冲激光光线吸收性良好，能够效率良好地切断硅晶片和粘接膜。
再有，上述激光加工工序例如在如下的加工条件下进行。
激光光线的光源：YVO4激光器或YAG激光器
波长：    266nm
重复频率：50kHz
平均输出：4W
聚光光斑：椭圆形：长轴200μm、短轴10μm
加工进给速度：150mm/秒
在上述加工条件下，由于在一次加工工序中形成40μm左右的激光加工槽，所以通过重复执行两次上述激光加工工序，半导体晶片2就被切断而分割开，还可通过进行一次上述激光加工工序来在粘接膜3上形成70μm左右的激光加工槽。其结果为，如图7所示那样在半导体晶片2及粘接膜3上沿分割预定线21形成了激光加工槽210，晶片2被分割成一个个器件22，并且粘接膜3被残留一部分切削剩余部31地不完全切断。再有，切削剩余部31的厚度t在图示实施方式中为10μm。该切削剩余部31的厚度t优选在20μm以下。这样，在激光加工工序中，由于粘接膜3残留一部分切削剩余部31没有被完全切断，所以粘接膜3不会粘连在切割带T上。再有，在上述激光加工工序中，也可完全切断粘接膜3。在该激光加工工序中，由于不会如通过切削装置将晶片切断那样有高速旋转的切削刀具与分割出的器件22接触，所以器件22不会在粘接膜3上跳动，因此，即使半导体晶片2的厚度在100μm以下，也不会损伤器件22。
对在半导体晶片2上形成的全部分割预定线21实施上述的激光加工工序。
在如上述那样实施激光加工工序之后，实施拾取工序，在该拾取工序中，使切割带扩展、使分割成一个一个的各器件间的间隙扩大，将在背面安装有该粘接膜的器件从该切割带剥离并进行拾取。该拾取工序使用图8所示的拾取装置来实施。图8所示的拾取装置6具有：基座61；第一工作台62，其可在箭头Y所示的方向上移动地配设在该基座61上；以及第二工作台63，其可在与箭头Y正交的箭头X所示的方向上移动地配设在该第一工作台62上。基座61形成为矩形形状，在其两侧部上表面，在箭头Y所示的方向上相互平行地配设有两个导轨611、612。再有，在两个导轨中的一个导轨611上，在其上表面形成有截面为V字状的导引槽611a。
上述第一工作台62形成为在中央部具有矩形形状的开口621的窗框状。在该第一工作台62的一个侧部下表面，设有被引导轨622，该被引导轨622可滑动地与导引槽611a配合，该导引槽611a形成在设置于上述基座61上的一个导轨611上。此外，在第一工作台62的两侧部上表面，在与上述被引导轨622正交的方向上相互平行地配设有两个导轨623、624。再有，在两个导轨中的一个导轨623上，在其上表面形成有截面为V字状的导引槽623a。这样构成的第一工作台62，使被引导轨622与导引槽611a配合，该导引槽611a形成在设置于基座61的一个导轨611上，并且第一工作台62将另一侧部下表面载置于设置在基座61上的另一导轨612上。图示实施方式中的拾取装置6具有使第一工作台62沿设置在基座61上的导轨611、612在箭头Y所示方向上移动的第一移动构件64。
上述第二工作台63形成为矩形形状，在一个侧部下表面设有被引导轨632，该被引导轨632可滑动地与导引槽623a配合，该导引槽623a形成在设置于上述第一工作台62上的一个导轨623上。这样构成的第二工作台63，使被引导轨632与导引槽623a配合，该导引槽623a形成在设置于第一工作台62的一个导轨623上，并且第二工作台63将另一侧部下表面载置于设置在第一工作台62上的另一导轨624上。图示实施方式中的拾取装置6具有使第二工作台63沿设置在第一工作台62上的导轨623、624在箭头X所示的方向上移动的第二移动构件65。
图示实施方式中的拾取装置6具有：保持上述环状框架F的框架保持构件66；和使安装在保持于上述框架保持构件66的环状框架F上的切割带T扩展的带扩展构件67。框架保持构件66由环状的框架保持部件661和在该框架保持部件661的外周配设的作为固定构件的多个夹紧器662构成。框架保持部件661的上表面形成载置环状框架F的载置面661a，在该载置面661a上载置环状框架F。并且，载置在载置面661a上的环状框架F通过夹紧器662固定在框架保持部件661上。这样构成的框架保持构件66配设于第二工作台63的上方，并由后述的带扩展构件67可在上下方向上进退地支撑。
带扩展构件67具有配设在上述环状框架保持部件661的内侧的扩展轮670。该扩展轮670具有：比环状框架F的内径小、且比在安装于该环状框架F上的切割带T上所粘贴的半导体晶片2的外径大的内径和外径。此外，扩展轮670在下端部具有与设于上述第二工作台63的孔(未图示)的内周面可转动地配合的安装部，并且在该安装部的上侧外周面具有在径向上突出形成的支撑凸缘671。图示实施方式中的带扩展构件67具有使上述环状框架保持部件661可在上下方向上进退的支撑构件672。该支撑构件672由在上述支撑凸缘671上配设的多个空气缸673构成，其活塞杆674与上述环状的框架保持部件661的下表面连接。如此般由多个空气缸673构成的支撑构件672有选择地向基准位置和扩展位置移动，在上述基准位置，如图8和图9(a)所示，环状框架保持部件661的载置面661a与扩展轮670的上端为大致相同的高度，在上述扩展位置，如图9(b)所示，环状框架保持部件661的载置面661a从扩展轮670的上端在图中向下方离开预定量。
图示实施方式中的拾取装置6如图8所示具有使上述扩展轮670和框架保持部件661转动的转动构件68。该转动构件68由以下部件构成：配设在上述第二工作台63上的脉冲电动机681；安装在该脉冲电动机681的旋转轴上的滑轮682；以及卷绕在该滑轮682和扩展轮670的支撑凸缘671上的环状带683。通过驱动脉冲电动机681，这样构成的转动构件68通过滑轮682和环状带683使扩展轮670转动。
图示实施方式中的拾取装置6具有检测构件7，该检测构件7用于检测半导体晶片2的分割成一个一个的器件22，上述半导体晶片2通过切割带T支撑于在上述环状框架保持部件661上保持的环状框架F上。检测构件7安装在配置于基座61的L字状的支撑柱71上。该检测构件7由光学系统及摄像元件(CCD)等构成，其对通过切割带T支撑在保持于上述环状框架保持部件661的环状框架F上的半导体晶片2的、分割成一个一个的器件22进行摄像，并将其转换为电信号发送至未图示的控制构件。
此外，图示实施方式中的拾取装置6具有从切割带T上拾取分割成一个一个的器件22的拾取构件8。该拾取构件8由在基座61上配设的回转臂81和安装在该回转臂81的前端的拾取夹头82构成，回转臂81通过未图示的驱动构件而回转。再有，回转臂81构成为可上下活动，安装在前端的拾取夹头82能够拾取在切割带T上粘贴的分割成一个一个的器件22。
图示实施方式中的拾取装置6如上述那样构成，主要参照图9及图10来对使用该拾取装置6实施的拾取工序进行说明。
将通过切割带T支撑有实施了上述激光加工工序并在背面安装有粘接膜3的一个个器件22的环状框架F，如图9(a)所示那样载置在构成框架保持构件66的框架保持部件661的载置面661a上，并通过夹紧器662固定在框架保持部件661上(框架保持工序)。此时，框架保持部件661定位在图9(a)所示的基准位置上。
在如图9(a)所示那样定位于基准位置的框架保持部件661上，固定了通过切割带T支撑有在背面安装了粘接膜3的一个个器件22的环状框架F之后，使作为构成带扩展构件67的支撑构件672的多个空气缸673工作，使环状框架保持部件661下降到图9(b)所示的扩展位置。因此，由于固定在框架保持部件661的载置面661a上的环状框架F也下降，所以如图9(b)所示，安装在环状框架F上的切割带T与扩展轮670的上端缘抵接并扩展(带扩展工序)。其结果为，由于在粘贴于切割带T的粘接膜3上呈放射状地作用拉伸力，所以粘接膜3在上述激光加工工序中没有沿一个个器件22完全切断的情况下，通过实施该带扩展工序而沿着一个个器件22被完全切断。而且，安装有粘接膜3的一个个器件22之间的间隙S变大。
再有，在上述带扩展工序中，在粘接膜3没有被完全切断的情况下，如果上述切削剩余部31在20μm以下，则能够使粘接膜3沿各器件22的外周缘容易地断裂。此外，在粘接膜3没有被完全切断的情况下，带扩展工序中的环状框架保持部件611的移动速度优选在50mm/秒以上。再有，在粘接膜3没有被完全切断的情况下，优选的是：在带扩展工序中，如上述那样将粘接膜3冷却到10℃以下，使伸缩性下降后来实施。
在如上述那样实施带扩展工序之后，使第一移动构件64和第二移动构件65工作，使第一工作台62向箭头Y所示的方向(参照图8)移动，并且使第二工作台63向箭头X所示的方向(参照图8)移动，使一个个器件22定位于检测构件7的正下方，其中所述一个个器件22通过粘接膜3粘贴在切割带T上，所述切割带T安装在保持于框架保持部件661的环状框架F上。然后，使检测构件7工作，并确认一个个器件22之间的间隙是否与箭头Y所示的方向或箭头X所示的方向一致。如果一个个器件22之间的间隙与箭头Y所示的方向或箭头X所示的方向偏离，则使转动构件68工作使框架保持构件66转动以使其一致。接下来，使第一工作台62向箭头Y所示的方向(参照图8)移动，并且使第二工作台63向箭头X所示的方向(参照图8)移动，同时如图10所示使拾取构件8工作，通过拾取夹头82来吸附定位于预定位置上的器件22(在背面安装有粘接膜3)，从切割带T进行剥离并拾取(拾取工序)，并搬送至未图示的托盘或管芯焊接工序。在该拾取工序中，如上所述由于安装有粘接膜3的一个个器件22之间的间隙S变大，所以能够不与相邻的器件22接触地容易地进行拾取。因此，即使器件22的厚度为100μm以下，也能够可靠地进行拾取而不会因接触而破损。

Claims (4)

1.一种器件制造方法，其将晶片沿分割预定线分割成一个个器件，并且在上述器件的背面安装管芯焊接用的粘接膜，其中上述晶片在表面上在由形成为格子状的分割预定线划分而成的多个区域中形成有器件，并且上述晶片的厚度在100μm以下，其特征在于，上述器件制造方法包括以下工序：
晶片支撑工序，在晶片的背面安装粘接膜，并且将上述粘接膜侧粘贴到安装于环状框架的切割带的表面上；
激光加工工序，沿着将上述粘接膜侧粘贴在上述切割带上的晶片的分割预定线，对晶片照射具有吸收性的波长的脉冲激光光线，将晶片分割成一个个器件，并且将上述粘接膜切断；以及
拾取工序，在实施上述激光加工工序之后，使上述切割带扩展，使分割成一个一个的各器件间的间隙扩大，将在背面安装有上述粘接膜的器件从上述切割带剥离并进行拾取。
2.根据权利要求1所述的器件制造方法，其特征在于，
在上述激光加工工序中对粘接膜进行残留一部分切削剩余部的不完全切断。
3.根据权利要求1或2所述的器件制造方法，其特征在于，
上述激光加工工序照射波长在370nm以下的脉冲激光光线。
4.根据权利要求2所述的器件制造方法，其特征在于，
在上述拾取工序中，在将上述粘接膜冷却以使伸缩性降低后，扩展上述切割带。
CN200810086849XA 2007-03-19 2008-03-19 器件制造方法 Active CN101271834B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-070000 2007-03-19
JP2007070000A JP2008235398A (ja) 2007-03-19 2007-03-19 デバイスの製造方法

Publications (2)

Publication Number Publication Date
CN101271834A true CN101271834A (zh) 2008-09-24
CN101271834B CN101271834B (zh) 2011-06-22

Family

ID=39775162

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200810086849XA Active CN101271834B (zh) 2007-03-19 2008-03-19 器件制造方法

Country Status (3)

Country Link
US (1) US7825009B2 (zh)
JP (1) JP2008235398A (zh)
CN (1) CN101271834B (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102201502A (zh) * 2010-03-23 2011-09-28 株式会社迪思科 光器件晶片的加工方法
CN102403204A (zh) * 2010-09-10 2012-04-04 株式会社迪思科 晶片的加工方法
CN111293083A (zh) * 2018-12-06 2020-06-16 株式会社迪思科 被加工物的加工方法、器件芯片的制造方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011077429A (ja) * 2009-10-01 2011-04-14 Disco Abrasive Syst Ltd ワーク分割方法
JP5441629B2 (ja) * 2009-11-13 2014-03-12 株式会社ディスコ ウエーハの加工方法
JP5443151B2 (ja) * 2009-12-24 2014-03-19 株式会社ディスコ 複合基板の製造方法
JP6178077B2 (ja) * 2013-01-23 2017-08-09 株式会社ディスコ ウエーハの加工方法
US20170213765A1 (en) * 2014-05-23 2017-07-27 Hitachi Chemical Company, Ltd. Die bonding/dicing sheet
JP6399923B2 (ja) * 2014-12-24 2018-10-03 株式会社ディスコ 板状物のレーザー加工方法
JP7229636B2 (ja) * 2019-01-17 2023-02-28 株式会社ディスコ ウェーハの加工方法

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0715087B2 (ja) * 1988-07-21 1995-02-22 リンテック株式会社 粘接着テープおよびその使用方法
JP2866453B2 (ja) * 1990-07-04 1999-03-08 ローム株式会社 エキスパンドテープ及びチップ部品の実装方法
JP2994510B2 (ja) * 1992-02-10 1999-12-27 ローム株式会社 半導体装置およびその製法
JP3496347B2 (ja) * 1995-07-13 2004-02-09 株式会社デンソー 半導体装置及びその製造方法
MY118036A (en) * 1996-01-22 2004-08-30 Lintec Corp Wafer dicing/bonding sheet and process for producing semiconductor device
US6312800B1 (en) * 1997-02-10 2001-11-06 Lintec Corporation Pressure sensitive adhesive sheet for producing a chip
US5863813A (en) * 1997-08-20 1999-01-26 Micron Communications, Inc. Method of processing semiconductive material wafers and method of forming flip chips and semiconductor chips
JP2000182995A (ja) 1998-12-14 2000-06-30 Mitsumi Electric Co Ltd 半導体装置の製造方法
US6555417B2 (en) * 2000-12-05 2003-04-29 Analog Devices, Inc. Method and device for protecting micro electromechanical system structures during dicing of a wafer
EP1677346B1 (en) * 2001-10-01 2011-12-14 Electro Scientific Industries, Inc. Machining substrates, particularly semiconductor wafers
JP2003173988A (ja) * 2001-12-04 2003-06-20 Furukawa Electric Co Ltd:The 半導体ウェハのダイシング方法
US6908784B1 (en) * 2002-03-06 2005-06-21 Micron Technology, Inc. Method for fabricating encapsulated semiconductor components
US6806544B2 (en) * 2002-11-05 2004-10-19 New Wave Research Method and apparatus for cutting devices from conductive substrates secured during cutting by vacuum pressure
JP2004273895A (ja) * 2003-03-11 2004-09-30 Disco Abrasive Syst Ltd 半導体ウエーハの分割方法
US7410831B2 (en) * 2003-05-12 2008-08-12 Tokyo Seimitsu Co., Ltd. Method and device for dividing plate-like member
WO2004112096A2 (en) * 2003-06-12 2004-12-23 Symbol Technologies, Inc. Method and system for high volume transfer of dies to substrates
JP2005019525A (ja) * 2003-06-24 2005-01-20 Disco Abrasive Syst Ltd 半導体チップの製造方法
GB2404280B (en) * 2003-07-03 2006-09-27 Xsil Technology Ltd Die bonding
JP2005101182A (ja) * 2003-09-24 2005-04-14 Disco Abrasive Syst Ltd 半導体チップの製造方法
JP4868708B2 (ja) * 2004-03-05 2012-02-01 日東電工株式会社 レーザーダイシング・ダイボンド用粘着シート及びこれを用いた半導体装置の製造方法
MY138566A (en) * 2004-03-15 2009-06-30 Hitachi Chemical Co Ltd Dicing/die bonding sheet
JP2006049591A (ja) * 2004-08-05 2006-02-16 Disco Abrasive Syst Ltd ウエーハに貼着された接着フィルムの破断方法および破断装置
US7550367B2 (en) * 2004-08-17 2009-06-23 Denso Corporation Method for separating semiconductor substrate
US7101620B1 (en) * 2004-09-07 2006-09-05 National Semiconductor Corporation Thermal release wafer mount tape with B-stage adhesive
JP4736379B2 (ja) * 2004-09-07 2011-07-27 日立化成工業株式会社 接着シート付き半導体素子の製造方法、接着シート、及びダイシングテープ一体型接着シート
JP4624813B2 (ja) * 2005-01-21 2011-02-02 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体製造装置
US7265034B2 (en) * 2005-02-18 2007-09-04 Taiwan Semiconductor Manufacturing Company, Ltd. Method of cutting integrated circuit chips from wafer by ablating with laser and cutting with saw blade
JP4744957B2 (ja) * 2005-07-13 2011-08-10 株式会社ディスコ ウエーハに装着された接着フィルムの破断装置
JP2007250598A (ja) * 2006-03-14 2007-09-27 Renesas Technology Corp 半導体装置の製造方法
JP4847199B2 (ja) * 2006-04-25 2011-12-28 株式会社ディスコ ウエーハに装着された接着フィルムの破断方法
JP4777830B2 (ja) * 2006-06-06 2011-09-21 株式会社ディスコ ウエーハの分割方法
US8053280B2 (en) * 2007-11-02 2011-11-08 Infineon Technologies Ag Method of producing multiple semiconductor devices
JP5203744B2 (ja) * 2008-02-21 2013-06-05 株式会社ディスコ ウエーハの裏面に装着された接着フィルムの破断方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102201502A (zh) * 2010-03-23 2011-09-28 株式会社迪思科 光器件晶片的加工方法
CN102201502B (zh) * 2010-03-23 2016-03-30 株式会社迪思科 光器件晶片的加工方法
CN102403204A (zh) * 2010-09-10 2012-04-04 株式会社迪思科 晶片的加工方法
CN102403204B (zh) * 2010-09-10 2016-08-10 株式会社迪思科 晶片的加工方法
CN111293083A (zh) * 2018-12-06 2020-06-16 株式会社迪思科 被加工物的加工方法、器件芯片的制造方法

Also Published As

Publication number Publication date
US7825009B2 (en) 2010-11-02
US20080233711A1 (en) 2008-09-25
CN101271834B (zh) 2011-06-22
JP2008235398A (ja) 2008-10-02

Similar Documents

Publication Publication Date Title
CN101271834B (zh) 器件制造方法
CN101261934B (zh) 器件制造方法
US7129150B2 (en) Method of dividing a semiconductor wafer
JP4630692B2 (ja) レーザー加工方法
US7888239B2 (en) Semiconductor device manufacturing method
US7915140B2 (en) Fabrication method for device having die attach film on the back side thereof
CN101388326B (zh) 器件制造方法
US7507639B2 (en) Wafer dividing method
US7549560B2 (en) Wafer dividing method
KR102272434B1 (ko) 웨이퍼의 가공 방법
CN101436526A (zh) 半导体器件的制造方法
US20070128834A1 (en) Wafer dividing method
TWI459452B (zh) A method of breaking the film attached to the back of the wafer, and a subsequent film
CN102097372B (zh) 晶片的加工方法
TW201730946A (zh) 晶圓的加工方法
JP2007305687A (ja) ウエーハの分割方法および分割装置
CN103909345A (zh) 晶片的加工方法以及激光加工装置
JP2006245209A (ja) 半導体チップの製造方法
JP2015015359A (ja) ウエーハの加工方法
JP2005116739A (ja) 半導体チップの製造方法
CN104979183A (zh) 层叠基板的加工方法
JP4532358B2 (ja) 半導体チップの製造方法
JP2010108992A (ja) 貼り合わせウエーハの分割方法及び該分割方法により製造されるデバイス
JP2005101182A (ja) 半導体チップの製造方法
JP5301906B2 (ja) 半導体デバイスの製造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant