CN101302610B - 具有覆盖钇铝层的部件的处理腔 - Google Patents

具有覆盖钇铝层的部件的处理腔 Download PDF

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CN101302610B
CN101302610B CN2008101084174A CN200810108417A CN101302610B CN 101302610 B CN101302610 B CN 101302610B CN 2008101084174 A CN2008101084174 A CN 2008101084174A CN 200810108417 A CN200810108417 A CN 200810108417A CN 101302610 B CN101302610 B CN 101302610B
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韩念慈
徐立
石宏
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Abstract

本发明具有覆盖钇铝层的部件的处理腔。基片处理腔部件是具有整体性表面层的结构，该层含有钇铝化合物。可以由含钇和铝构成的金属合金浇铸成该部件形状，并阳极化处理其表面以形成整体性阳极化表面层。该腔室部件也可以在预制金属模中用离子注入材料形成。该部件可以是腔壁、基片支座、基片传送器、供气设备、气体激发器和排气设备中的一个或多个。

Description

具有覆盖钇铝层的部件的处理腔
本申请是分案申请，原申请的申请日为2002年12月19日、申请号为02828221.3(PCT/US02/41150)、发明名称为“具有覆盖钇铝层的部件的处理腔”。
技术领域
本发明涉及基片处理腔及其制造方法。
背景技术
在基片处理过程中，例如，基片刻蚀过程、沉积过程以及基片和腔室的清理过程中，会使用诸如卤素或氧气之类的气体。该气体，特别是当其被诸如射频电源或微波之类的能量激发时能够腐蚀或侵蚀(此二术语在此可互换)腔壁等腔室部件。例如，由铝制成的腔室部件会被卤族气体腐蚀成AlCl3或AlF3。被腐蚀的部件需要被更换或被清理，导致不希望有的腔室停机。此外，当部件被腐蚀的部分剥落和污染基片时，会降低基片的产量。因此，有必要降低腔室部件的腐蚀。
在铝制腔室部件上形成阳极化氧化铝层可以改进该部件的抗腐蚀性或抗侵蚀性。例如，在电镀槽中可以对铝制腔室壁进行阳极化处理以形成由阳极化氧化铝组成的防护层。虽然阳极化层提高了铝制腔室的抗腐蚀性，但其有时仍可被高度激发的或腐蚀性的气体组分所腐蚀，例如，被含有诸如CF4之类的含氟气体等离子体的被激发气体所腐蚀，形成AlF3之类的气态副产物。
由块状陶瓷材料或者等离子喷射陶瓷层制成的传统腔室部件虽然表现出较好的抗侵蚀性，但是却容易受到其它破坏方式的影响。例如，由含有氧化钇和氧化铝混合物的块状材料制成的腔室部件是脆的，当加工成部件形状时容易断裂。块状陶瓷材料在腔室工作期间也可能易于开裂。腔室部件也可由等离子喷射涂层制成。然而，在加热或冷却期间，层和底层部件材料之间的热膨胀不一致会导致热应变，从而造成裂纹或使陶瓷涂层从底下的部件上剥落下来。因而，传统的陶瓷部件并不总是具有期望的抗腐蚀或抗破坏性。
因此，对于腔室部件需要具有对腐蚀性激发气体的改进的抗腐蚀或抗侵蚀性。也需要能够容易地将这样的腔室部件制成期望形状。对于耐久性的腔室部件，还需要该腔室部件在其工作期间不容易开裂或断裂。
发明内容
在本发明的一个实施方式中，能够暴露于RF或微波激发气体的基片处理腔部件包括钇和铝的金属合金，所述金属合金具有能够暴露于基片处理腔中的RF或微波激发气体并且具有穿过层厚度的成分梯度的层。该部件能够抵抗基片处理腔中的激发气体的腐蚀。
提供了一种制造等离子体处理腔部件的方法，所述方法具有步骤：(a)形成包含结构的腔室部件；以及(b)在所述结构上形成层，该层能够暴露于处理腔中的等离子体中，所述层包括钇-铝氧化物，该钇-铝氧化物具有穿过该层厚度的成分梯度。该方法能够形成能抵抗处理腔中等离子体的腐蚀的部件。
在另一个实施方式中，提供了基片处理腔部件，其能够暴露于基片处理腔中的RF或微波激发气体中。该部件具有包括(i)铝或(ii)钇和铝的金属合金的结构，所述结构具有离子注入的表面层，该表面层包括钇-铝化合物，其中激发的钇离子被注入到含铝的部件中或者激发的氧离子被注入到含钇和铝的金属合金的部件中。该部件能够抵抗基片处理腔中RF和微波激发气体的腐蚀。
提供了一种制造基片处理腔部件的方法，该方法具有步骤：(a)形成包括含铝结构的腔室部件；以及(b)离子注入钇到所述铝中；和(c)处理所述结构的表面以形成钇铝氧化物，所述处理包括下列的一个或多个：对所述结构进行退火处理，离子注入氧到所述结构中，和在酸溶液中阳极化处理所述结构的表面。
提供了基片处理装置，该基片处理装置含有：具有围绕处理区的壁的处理腔；能够接收基片的基片传送器；能将处理气体导入所述处理腔内的供气设备；能激发处理腔中处理气体的气体激发器；以及能从处理腔排出处理气体的排气设备，其中处理腔壁、基片支座、基片传送器、供气设备、气体激发器和排气设备中的一个或多个包括具有表面层的结构，所述表面层包括具有穿过该层厚度的成分梯度的钇-铝氧化物。
附图说明
通过参照下列描述、所附权利要求书以及阐释本发明实施例的附图，本发明的上述及其它特征、方面和优点将更加明白，其中：
图1A是根据本发明的处理腔的一个实施例的示意性剖面图；
图1B是另一种气体激发器的剖视图；
图1C是另一种处理腔的示意性剖视图；
图2是腔室部件的局部示意性剖视图，该腔室部件包括钇铝化合物的整体式表面层；
图3A是阳极化处理金属合金部件表面以形成整体式表面层的过程的一个实施例的流程图；
图3B是离子注入部件表面以形成整体式表面层的过程的一个实施例的流程图；
图4是离子注入器的示意性俯视图；
图5是图4的离子注入器中的离子源的示意性剖视图；
图6是退火装置的示意性剖视图。
具体实施方式
一种适于处理基片104的示范性装置102包括能装入该基片104的处理腔106，如图1A和1C所示。示范性的腔室有从Applied Materials，Inc.Santa Clara，California公司购得的eMax(TM)和DPS II(TM)腔。这里展示的装置102的这种特殊实施方式适于处理例如半导体晶片之类的基片104，还可由那些普通技术人员进行改造以处理其它基片104，如平板显示器、聚合物面板或其它电路接收构件。装置102对处理层，如基片104上的抗蚀刻层、含硅层、含金属层、绝缘层和/或导电层特别有用。
装置102可安在主机架体上(未示出)，该主机架包括并为装置102提供电的、保持垂直及其它的支持功能，且可以成为多腔室系统的一部分(未示出)。示范性的主机架是从Applied Materials，Inc.Santa Clara，California公司购得的Centura(TM)和Producer(TM)。多腔室系统能在腔室之间传送基片104而不会破坏真空，也不会将基片104曝露到多腔室系统外的湿气或其它污染物之中。多腔室系统的一个优点是多腔室系统内的不同腔室可有不同的用途。例如，一个腔室可用于蚀刻基片104，另一个用于沉积金属膜，另一个用于快速热处理，而再一个用于沉积抗反射层。此处理过程可在多腔室系统内无间断地进行，从而防止基片104受到污染，否则，在用于处理过程的不同部分的各个分开的单独腔室之间传送基片104时，污染可能会发生。
一般来说，装置102包括处理腔106，其具有例如围壁103之类的腔壁107，该腔壁可能包括围绕处理区108的顶壁118、侧壁114和底壁116。腔壁107还可包括腔壁衬里105，其装衬在处理区108周围的围壁103的至少一部分。示范性的衬里有采用于前面提及的eMax和DPS II腔中的那些衬里。在操作中，通过供气设备130将处理气体导入处理腔106中，该供气设备包括处理气源138和气体分配器137。气体分配器137可包括一个或多个具有一个或多个气体流量阀134的导管136，以及一个或多个位于基片支座110周边的气体出口142，该基片支座110具有容纳基片的表面180。或者，气体分配器137可包括莲蓬头式气体分配器(未示出)。通过排气设备144从处理腔106排出处理余气和蚀刻剂副产物，该排气设备144可包括从处理区接收剩余处理气体的抽吸通道170、控制处理腔106内部处理气体压力的节流阀135，以及一个或多个排气泵152。
气体激发器154可通过使能量耦合到处理腔106的处理区108内的处理气体上而激发处理气体。在图1A所示的方案中，气体激发器154包括由电源159供电以激发处理气体的处理电极139，141。处理电极139，141可包括成为壁或在壁内的电极141，如腔室106的侧壁114或顶壁118，该腔室106可电容性地连接到另一电极139上，如基片104下面的支座110中的电极。作为一种选择或附加地，如图1B所示，气体激发器154可包括天线175，其含有一个或多个可能关于腔室106的中心呈圆对称的感应线圈178。在又一种方案中，气体激发器154可包括微波源和波导管，以通过位于腔室106上游处的远区157中的微波能量激活处理气体，如图1C所示。为处理基片104，对处理腔106抽真空并使其保持在预定的低于大气的压力下。然后通过基片传送器101如机械手和起模顶杆系统等将基片104传送到支座110上。此后，使RF或微波能量耦合到气体上，由气体激发器154激发气体，向处理区108提供激发的气体以处理基片104。
腔室106的至少一个部件114，例如腔壁107、基片支座110、基片传送器101、供气设备130、气体激发器154、和排气设备144中的一个或多个，包括含钇-铝化合物的整体性表面层117，如图2所示意性地表示。部件114的下层结构111和整体性表面层构成单一且连续的结构，其间不存在不连续和明显的晶界，如图2中点划线所示意性地表示出的。采用至少一部分下层部件的材料，在部件114表面原地形成整体性表面层。与传统的层如在层和下层结构之间存在不连续和明显的边界的等离子体喷射层相比，在制造部件114的结构外“生长”整体性表面层117，使得整体性表面层117更牢固地结合到下层部件材料结构上。例如通过阳极化处理由所需的金属成分组成的部件的表面113，或通过离子注入部件114的表面113，从结构111形成整体性表面层117。整体性表面层117也可具有成分梯度，该成分梯度发生从下层材料成分到表面成分的连续或逐渐的成分变化。结果是整体性表面层117牢固地结合到下层材料，这减少了该整体性表面层117的剥落，也使得该层更好地抵抗热应力而不发生开裂。
具有整体性表面层117的部件114可以是腔壁107，如部分的围壁103或衬里105、基片支座110、供气设备130、气体激发器154、排气设备144，或基片传送器101。也需要对易受腐蚀或侵蚀的腔室部件114的各部分，例如曝露于高温、腐蚀性气体和/或处理区108内侵蚀性溅射物质中的部件114的表面115进行处理以形成整体性表面层117。例如，部件114可构成腔壁107的一部分，如曝露于腔室106内等离子体中的腔壁表面115。
在一种方案中，整体性表面层117含有钇-铝化合物，该钇-铝化合物可能是钇和铝的合金，或是具有预先确定的化学计量的一种或多种化合物，如钇和铝的多种氧化物。例如，钇-铝化合物可为Y2O3和Al2O3的混合物，这类混合物的例子是钇铝石榴石(YAG)。当整体性表面层117为钇铝氧化物时，整体性表面层117穿过部件114厚度的氧化物化合物的浓度梯度为：在典型存在于部件114的表面113附近处的氧化物化合物的浓度较高，随着进入部件的内部结构111和离开表面113的距离的增加，氧化物化合物的浓度降低。
例如，当整体性表面层117含有钇铝氧化物时，邻近表面113的区域倾向于具有较高浓度的氧化的钇和铝物质，而在朝向部件内部结构111的区域的氧化物浓度较低。钇铝氧化物的整体性表面层117对受激卤化气体表现出良好的抗腐蚀性，对激发的溅射气体也表现出良好的抗侵蚀性。尤其是，整体性表面层117对激发的含氯气体有良好的抵抗性。选择整体性表面层117的成分和厚度以提高对腐蚀、侵蚀或其它破坏作用的抵抗性。例如，较厚的整体性表面层117可对腔室部件114的腐蚀和侵蚀设置更坚固的屏障，而较薄的层更适于抵抗热冲击。甚至可以形成整体性表面层117，使氧化物以及整体性表面层117的厚度延伸穿过部件的一定深度或刚好停留在其表面上。例如，整体性表面层117的合适的厚度可为约0.5密耳到约8密耳，或甚至是1密耳到4密耳。
在一种方案中，部件114由含有钇和铝的合金组成，且整体性表面层117由阳极化处理金属合金表面而形成。具有阳极化的整体性表面层117的金属合金可构成腔室部件114的一部分或全部。金属合金包括元素钇和铝这一成分，可选择元素钇和铝成分以获得所需的抗腐蚀性或其它合金特性。例如，可选择该成分以获得具有优良熔点或使腔室部件114易于制造和成形的延展性的金属合金。也可选择该成分以获得基片处理期间的有益特性，如在激发的处理气体中的抗腐蚀性、耐高温性，或抵抗热冲击的能力。在一种方案中，合适的成分包括基本由钇和铝组成的金属合金。
对阳极化处理的金属合金的成分进行选择，使覆盖层获得所需的抗腐蚀和抗侵蚀性能。可选择该成分以使金属合金能被阳极化而形成阳极化的整体性表面层117，该层抵抗激发的气体的腐蚀。例如，可选择金属合金成分，以使在酸溶液中进行阳极化处理时于金属合金的表面113上获得所需的氧化的铝和钇的面层成分。一种获得了抗腐蚀的阳极化整体性表面层117的金属合金的合适成分，例如，其中钇至少占金属合金重量的5％，优选占少于金属合金重量的约80％，如占金属合金重量的约67％。
金属合金使具有有益覆盖整体性表面层117的一体化或连续结构成为可能。该一体化的结构降低了阳极化的整体性表面层117和下层的金属合金之间的热膨胀不一致。换句话说，包括阳极化整体性表面层117的阳极化金属合金在金属合金的加热和冷却期间保持了基本单一的结构。因此，阳极化的整体性表面层117在基片处理期间出现开裂和剥落现象最少，并以剩余的金属合金形成持久的抗腐蚀结构。
在一种制造由含钇和铝的金属合金组成且具有阳极化的整体性表面层117的部件114的示范性方法中，加热软化或熔化钇和铝的混合物以形成用于加工成腔室部件114的金属合金。将腔室部件114置于氧化溶液中并对腔室部件114电偏置(electrically biasing)，以清洁腔室部件114的表面113并随后进行阳极化处理。
图3A表示说明制造中阳极化处理方法的一个实施例的流程图。在所需的成分中形成含钇和铝的金属合金。例如，合适的成分可包含其中钇和铝的摩尔比为约5∶3的金属合金。例如，金属合金可由加热含有所需量的钇和铝的混合物至成分的熔点或软化点，使金属熔化并使它们结合成单一的合金。在一种方案中，金属合金可基本由钇和铝组成，例如其它金属之类的其它合金添加剂可与金属钇和铝一起熔化以帮助形成合金或提高金属合金的性能。例如，可加入铈或其它稀土元素。
金属合金被加工成形为所需的腔室部件或腔室部件的部分。例如，所需的金属合金的形状可由浇铸或机械加工金属合金而得到。通过在具有预定形状或形式的浇铸容器中冷却熔融或其它液化形式的金属合金，对金属合金进行浇铸。浇铸容器可包含其中熔化金属钇和铝以形成合金的相同容器，或者也可为分开的浇铸容器。热金属合金的冷却使金属合金固化成与浇铸容器形状一致的形状，从而获得所需的金属合金形状。
一旦形成了具有所需形状的金属合金，就可以进行阳极化处理使金属合金的表面阳极化，从而形成氧化物类的阳极化整体性表面层117。也可在阳极化处理之前清洁金属合金以除去金属合金的表面113上的任何污染物或微粒，这些污染物或微粒可能会干扰阳极化表面层的生长。例如，将金属合金浸入酸溶液中除去所有污染粒子以清洁表面113，或者可采用超声波方法清洁金属合金。
在一种方案中，使金属合金的表面113和氧化剂发生电解反应来阳极氧化金属合金。例如，可将金属合金置于氧化性溶液如氧化性酸溶液中，向金属合金加偏置电压以诱发形成阳极化的表面层。合适的酸溶液可包括如铬酸、草酸和硫酸中的一种或多种。可选择阳极化处理的参数，如酸溶液成分、偏置电功率、以及处理时间以形成具有所需性质如具有所需厚度或抗腐蚀性等的阳极化整体性表面层117。例如，对槽中的电极施加合适的偏置电功率约30分钟至约90分钟，甚至是约120分钟，在包括约0.5M到1.5M硫酸溶液中阳极化处理金属合金，形成包含阳极化表面层的金属合金。
将金属合金曝露于如空气之类的含氧气体中，也可使金属合金至少发生部分阳极化。空气中的氧气对金属合金的表面113进行氧化，从而形成阳极化整体性表面层117。通过加热金属合金和含氧气体并采用纯的氧气，可以提高阳极化处理的速度。
按照本领域普通技术人员所公知的技术，采用最合适于制造腔室部件114的顺序实施形成腔室部件114的步骤，该腔室部件114由具有阳极化整体性表面层117的金属合金组成。例如，可如前述将金属合金形成所需的形状之后，再进行阳极化处理。另一个例子是可在金属合金形成所需形状之前进行阳极化处理。例如，可在阳极化处理之前或之后用焊接使金属合金成形。
至少部分从含有钇和铝并具有阳极化整体性表面层117的金属合金形成的腔室部件114，如腔室壁107、供气设备、气体激发器、排气设备，基片传送器或支座，使部件114在激发的处理气体中和在高处理温度下具有改进的抗腐蚀性。具有阳极化整体性表面层117的金属合金的一体化结构进一步提高了抗腐蚀性，并减少了阳极化表面层的开裂和剥落现象。因此，理想的是腔室部件114在例如曝露于处理区的腔室壁107的表面115之类的部件114易被腐蚀的区域包含具有阳极化整体性表面层117的金属合金，以减少这些区域受到腐蚀和侵蚀。
在本发明的另一方面，如图4所示，采用离子注入器300将整体性表面层117的构成材料离子注入到部件114的表面113中，形成整体性表面层117。在这种方法中，离子注入器300采用一种或多种金属制造部件114，并采用激发的离子注入物质轰击其表面113，将其它金属或非金属物质注入到部件114中。在一个实施例中，将激发的钇离子注入到含铝的部件114的表面113中，而在另一个实施例中，将激发的氧离子注入到钇-铝合金的表面113中。离子注入器300包括封闭真空环境的真空仓310，以及一个或多个对真空仓310进行抽真空以在此形成真空环境的真空泵320。可在室温或更高的温度下进行离子注入处理。图3B中给出了一典型的处理步骤的列表。
离子注入器300能很好控制注入到金属合金的表面113中的材料的均匀性和表面分布。例如，离子注入器300能控制注入密度，注入离子以该密度被注入到部件114中；以及控制注入材料在部件中的渗透深度。离子注入器300也能提供均匀的表面覆盖和浓度水平。此外，离子注入器300也能只在部件114的某些选定区域形成整体性表面层117，并可控制注入材料在这些区域边缘处的分布。在典型的离子注入方法中，可注入合适剂量范围的离子，如从1011到1017个离子/cm2。在一个实施例中，离子注入器300可将离子注入量控制在该量范围的±1％内。
典型地，离子注入器300包括位于真空仓310内的离子源330，以提供注入形成整体性表面层117的材料并使其离子化。在一个方案中，离子源330包括固态的注入材料，并采用汽化室(未示出)使固态注入材料汽化。在另一个方案中，离子源330提供气态的注入材料。例如，可从远处将气态注入材料输入到离子源330内，从而使材料在离子源330中得到补充而不用打开真空仓，否则就会破坏真空环境。例如，注入材料可包括将被注入到铝部件中以形成含钇-铝氧化物化合物如YAG的部件的元素钇或氧。可采用任何来源的可离子化的材料，如含钇气体、固态钇或氧气。
在一个实施例中，如图5所示，离子源330包括气体入口410，通过它可将气态注入材料导入离子化系统420的离子化区，以使气态注入材料在被输送到部件的表面113之前先进行离子化。使气体或注入材料蒸汽通过热阴极电子放电、冷阴极电子放电或RF放电，对气态或汽化的注入材料进行离子化。在一个方案中，离子化系统420包括加热丝425。离子源330进一步包括阳极430和围绕抽吸出口445的抽吸电极440，对该抽吸电极递增地加上偏置电压，从离子化气体抽吸出正离子并形成离子束340。在一个实施例中，在阳极430上加的偏压为约70V到约130V，例如为100V。抽吸电极(extraction electrode)440上所加的偏压可为约10keV到约25keV，如从约15keV到约20keV。可做成一定形状的抽吸出口445以决定离子束340的形状。例如，抽吸出口445可为圆形孔或为长方形缝。设置螺线管450以产生迫使电子沿螺旋形轨道移动的磁场，以增加离子源330的离子化效率。离子束340的电流的示范性合适范围为约0.1mA到约100mA，如约1mA到约20mA。
回到图4，离子注入器300也典型地包括一系列加速电极350以加速离子束340。加速电极350通常保持为在沿离子束340前进的方向上递增地增加电势的强度，以逐渐加速离子束340。在一个方案中，加速电极350加速离子束至其能量达到约50到约500keV，更典型地为从约100到约400keV。可采用该高能离子束来注入相对较重或需要较深注入到部件114的表面113中的离子。
离子注入器300包括聚焦离子束340的束聚焦器360。在一个方案中，束聚焦器360包括产生磁场以汇聚离子束340的磁场透镜(未示出)。例如，磁场可基本平行于离子束340前进的方向。例如通过保持在某一电势，束聚焦器360还可额外用于进一步加速离子束340。在另一个方案中，束聚焦器360包括产生电场以聚焦离子束340的静电场透镜(未示出)。例如，电场的一部分可基本垂直于离子束340前进的方向。
在一个方案中，离子注入器300进一步包括分析并挑选离子质量的质量分析器370。在一个方案中，质量分析器370包括离子束340可以穿过的弯曲通道(未示出)。质量分析器370在通道内部产生磁场以加速具有选定的质荷比的离子沿弯曲通道内部前进。选定的离子中具有相当大差异的质荷比的那些离子与弯曲通道的侧面碰撞，因而不继续穿过弯曲通道。在一个实施例中，质量分析器370通过选择特定的磁场强度，选择出允许的特定质荷比。在另一个实施例中，质量分析器370通过测定磁场强度范围并观测每个磁场强度下穿过弯曲通道的离子数目，决定离子束340的质荷比分布。质量分析器370典型地包括许多由铁磁体材料制成的磁极靴。可设置一个或多个螺线管以在磁极靴附近产生磁场。
离子注入器300包括束偏转器380，使离子束340偏转通过部件114的表面113以分布地将离子注入部件114。在一个实施例中，束偏转器380包括产生电场以使离子束340发生偏转的静电偏转器。该电场具有垂直于离子束340前进方向的场分量，静电偏转器使离子束340沿着该场分量偏转。在另一个实施例中，束偏转器380包括产生磁场以使离子束340发生偏转的磁偏转器。该磁场具有垂直于离子束340前进方向的磁场分量，且该磁偏转器使离子束340在既垂直于离子束340的前进方向又垂直于垂直的磁场分量的方向偏转。
离子注入器300将一定量的注入材料注入到部件114的结构111中，使注入材料与下层结构的材料的比率达到所需的化学计量。例如，当将钇离子注入到铝结构的表面中时，铝和钇的理想摩尔比可以是约4∶2到约6∶4，或者甚至是约5∶3。当结构111随后进行退火、阳极化、或注入氧离子时优化这一比率以得到YAG。
如图6所示，也可采用退火装置500对部件114进行退火，使部件114晶体结构的破坏得到修复。例如，退火装置500可“愈合”部件114在离子注入期间被激发离子破坏的区域。典型地，退火装置500包括能加热部件114到合适的温度进行退火的热源510，如不相干的或相干的电磁辐射源。例如，退火装置500可将部件114加热到至少约600℃的温度，如至少约900℃。在图6所示的一个实施例中，退火装置500是包括有热源510的快速热退火装置505，该热源包括产生射线的钨卤素灯515以及将射线反射到部件114上的反射装置520。如空气或水之类的流体525沿热源510流动以调整热源510的温度。在一种实施方式中，在热源510和部件114之间设置石英片530以隔离流体与部件114。快速热退火装置可进一步包括监控部件114温度的温度监控器540。在一个实施例中，温度监控器540包括分析部件114发出的辐射以测定部件114的温度的光学高温计545。
虽然对本发明的示范性实施例进行了展示和描述，但本领域的普通技术人员可设计出并入本发明同时也落入本发明范围的其它实施例。例如，金属合金可包括例如其它金属之类的其它合适成分而不偏离本发明的范围。此外，金属合金可形成除那些特别提及的部分之外的部件114的各部分，这对本领域的普通技术人员来说是显而易见的。此外，之下、之上、底、顶、上、下、第一和第二等术语以及其它表示相对关系或表示位置的术语是参照附图中的示范性实施例给出的，并且是可互换的。因此，用于阐释本发明的优选方案、材料，或空间位置排列的说明，不应限制所附的权利要求。

Claims (25)

1.一种用于基片处理腔的部件，其能够暴露于RF或微波激发气体中，所述部件包括：
包含钇和铝的金属合金，所述金属合金具有包括钇-铝氧化物的层，该钇-铝氧化物具有穿过该层厚度的成分梯度，所述层能够暴露于所述基片处理腔中的所述RF或微波激发气体。
2.根据权利要求1的部件，其中所述成分梯度穿过所述层厚度连续变化。
3.根据权利要求1的部件，其中所述钇-铝氧化物包括YAG。
4.根据权利要求1的部件，其中所述金属合金包含按重量计至少5％的钇含量。
5.根据权利要求1的部件，其中所述金属合金包含按重量计50％以下的钇含量。
6.根据权利要求1的部件，其中所述层的厚度为从0.5密耳到8密耳。
7.一种制造等离子体处理腔部件的方法，所述方法包括：
(a)形成包括含金属合金的结构的腔室部件，该金属合金由钇和铝构成；以及
(b)在所述结构上形成层，该层包括钇-铝氧化物，该钇-铝氧化物具有穿过该层厚度的成分梯度，所述层能够暴露于所述处理腔中的等离子体。
8.根据权利要求7的方法，其中步骤(b)包括阳极化处理所述金属合金以形成具有所述成分梯度的钇-铝氧化物的阳极化层。
9.一种制造等离子体处理腔部件的方法，所述方法包括：
(a)形成包括含铝的结构的腔室部件；和
(b)在所述结构上形成层，该层包括钇-铝氧化物，该钇-铝氧化物具有穿过该层厚度的成分梯度，所述层能够暴露于所述处理腔中的等离子体。
10.根据权利要求9的方法，其中步骤(b)包括离子注入激发的钇和氧离子到所述铝中，以形成具有所述成分梯度的钇-铝氧化物。
11.根据权利要求7或9的方法，其中步骤(b)包括形成层，该层包括YAG的成分梯度。
12.一种基片处理腔部件，其能够暴露于基片处理腔中的RF或微波激发气体中，所述部件包括含(i)铝或(ii)金属合金的结构，该金属合金包括钇和铝，并且所述结构具有离子注入的表面层，该表面层包括钇-铝化合物。
13.根据权利要求12的部件，其中激发的钇离子被注入到含铝的部件中或者激发的氧离子被注入到含钇和铝的金属合金的部件中。
14.根据权利要求12的部件，其中所述结构包括按重量计钇含量至少5％的金属合金。
15.根据权利要求12的部件，其中所述钇-铝化合物包括钇铝氧化物。
16.根据权利要求12的部件，其中所述钇-铝化合物包括YAG。
17.根据权利要求12的部件，其中所述离子注入的表面层的厚度在从0.5密耳到8密耳之间。
18.根据权利要求12的部件，其中所述结构包括一部分围壁或腔壁衬里。
19.一种制造基片处理腔部件的方法，包括：
(a)形成包括含铝结构的腔室部件；
(b)离子注入钇到所述铝中；以及
(c)处理所述结构的表面以形成钇铝氧化物，所述处理包括下列的一个或多个：对所述结构进行退火处理，离子注入氧到所述结构中，和在酸溶液中阳极化处理所述结构的表面。
20.根据权利要求19的方法，其中步骤(b)包括产生钇离子并将所述离子激发到50至500keV的能级。
21.根据权利要求19的方法，其中步骤(c)包括处理所述结构的表面以形成YAG。
22.根据权利要求19的方法，包括处理所述结构的表面以形成整体性表面层，该层包括具有穿过该层厚度的成分梯度的钇-铝氧化物。
23.基片处理装置，包括：
处理腔，其具有围绕处理区的壁；
基片传送器，其能接收基片；
供气设备，其能将处理气体导入所述处理腔内；
气体激发器，其能激发所述处理腔中的所述处理气体；和
排气设备，其能从所述处理腔排出所述处理气体，
其中所述处理腔壁、基片支座、基片传送器、供气设备、气体激发器、排气设备中的一个或多个包括具有表面层的结构，所述表面层包括具有穿过该层厚度的成分梯度的钇-铝氧化物。
24.根据权利要求23的装置，其中所述表面层包括通过向所述结构施加偏置电功率而形成的阳极化表面层。
25.根据权利要求23的装置，其中所述表面层包括离子注入层。
CN2008101084174A 2002-01-08 2002-12-19 具有覆盖钇铝层的部件的处理腔 Expired - Fee Related CN101302610B (zh)

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US20030127049A1 (en) 2003-07-10
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US6942929B2 (en) 2005-09-13
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