CN101477996A - 具有集成薄膜红外滤光器的图像传感器 - Google Patents
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Abstract
公开了一种具有集成薄膜红外滤光器的图像传感器。此图像传感器含有多个制作在半导体衬底中的像素,每个像素都含有光敏元件。而且,在像素上制作有多层叠层,它适于滤除红外波段的入射光,其中多层叠层包括碳的中间层。最后在多层叠层和光敏元件上制作微透镜。
Description
本分案申请是基于申请号为200310104367.X,申请日为2003年10月24日,发明名称为“具有集成薄膜红外滤光器的图像传感器”的中国专利申请的分案申请。
技术领域
本发明涉及到图像传感器,更确切地说是加有薄膜红外滤光器的图像传感器。
背景技术
图像传感器是可用于产生静像或视频图像的电子集成电路。固态图像传感器可为电荷耦合器件(CCD)型,也可为互补金属-氧化物-半导体(CMOS)型。无论在哪种图像传感器中,都是将收集光的像素做在衬底中并排列成二维阵列。现代的图像传感器典型地含有数百万像素以提供高分辨的图像。图像传感器的重要部分是在像素上制作的滤色器和微透镜结构。顾名思义,滤色器的工作是与信号处理相结合来提供彩色的图像。微透镜用于将入射光聚焦至像素上,因而改善每个像素的填充因子(fill factor)。
红外(IR)滤光器典型地与图像传感器结合起来使用。红外滤光器防止或限制红外线入射至图像传感器上。许多现有的硅基像素都对红外波段的光有响应。因此,如果红外线射到像素上,像素将产生输出信号。这在大多数图像传感器的应用中都是不希望有的,因为这些图像传感器被设计成提供人眼可见光的图像。
一种解决这个问题的现有技术的通用方法,是在图像传感器前和/或图像传感器透镜之前,提供分立的红外滤光元件。红外滤光器可有各种形式,但可采取镀敷玻璃滤光器的形式。然而,这就增大了整个照相机的成本。
发明内容
根据本发明的一方面,提供一种图像传感器,包括:制作在半导体衬底中的多个像素,每个像素包含光敏元件;制作在所述多个像素上的多层叠层,所述多层叠层适于滤除红外波段的入射光;制作在所述多层叠层和所述光敏元件上的多个微透镜。
根据本发明的另一方面,提供一种图像传感器的像素,包括:制作在半导体衬底中的光敏元件;制作在光敏元件上的多层叠层,所述多层叠层适于滤除红外波段的入射光;制作在所述多层叠层和光敏元件上的微透镜。
附图说明
图1为现有技术图像传感器的部分剖面图。
图2为图像传感器的俯视图,表示像素排列成二维阵列,且其上制作有微透镜。
图3为半导体衬底的剖面图,说明按照本发明的一种实施方式来制作图像传感器。
具体实施方式
本发明涉及到一种具有集成红外滤光器的图像传感器。在下面的描述中,提供了许多具体细节,以彻底了解本发明的实施方式。然而,相关技术领域的熟练人员将会认识到,缺少一个或多个具体细节,或是用其他方法、元件等也可实现本发明。此外,没有详细示出或描述熟知的结构或操作以免模糊了本发明不同实施方式的各个方面。
纵观本说明书,所谓“一种实施方式”或“某种实施方式”意味着,结合此实施方式所描述的特征、结构或特性至少包含在本发明的一种实施方式中。因此,在此说明书中各处出现的词语“在一种实施方式中”或“在某种实施方式中”,不必都认为是同一实施方式。而且,此特征、结构或特性可由任何适当的方式结合在一个或多个实施方式中。
图1表示现有技术图像传感器101的简化剖面图,图像传感器101上制作有微透镜。如图1所示,图像传感器含有制作在衬底中的多个像素,像素具有光探测元件103。光探测元件103可为几种类型之一,如光二极管、光闸(photogate)或其他固态光敏元件。在每个像素上形成的是微透镜105。微透镜105将入射光聚焦至光探测元件103上。微透镜通常是在平整层上旋转涂敷微透镜材料层而成。然后腐蚀微透镜材料层而形成与每个像素对中的柱状或其他形状的区域。对微透镜材料加热使之回流来形成凸面的半球形微透镜。而且,在光探测元件103和微透镜105之间由参考数字107所代表的区域中,还有各种中间层,典型地可包括滤色层109及各种金属导线层。应可理解,图1所示的结构只是图像传感器结构的一个实例,本发明可适用于任何数目的变种。例如,微透镜可实质上为凹镜,如我的共同未决申请所公开的那样。作为选择,滤色器109也可制作在微透镜105上面。
图2表示图像传感器201的俯视图。图像传感器201含有多个像素203,典型地排列成二维阵列。在图2所示的实例中,此图像传感器表示为像素203的3×3阵列,然而可理解,实际的图像传感器201会有许许多多的像素,可设想排列成数千行和/或数千列。而且,虽然图2表示的是像素行和列的规则排列,像素也可排列为任何类型的有序排列。例如,交替列的像素在横向上可以稍有偏移而成棋盘格式的交错排列。
像素203典型地含有光敏元件,例如光二极管或光闸就是两个例子。然而,应可理解,也可使用现在知道的(如光闸)或将来开发的其他类型的光敏元件。而且,像素203也将包含放大和/或读出电路。为了清楚起见,图2中没有示出此电路。在一种实施方式中,像素203可为现有技术中通常所知的有源像素。在每个像素203上面制作微透镜205。
此外,与每个像素相关联的还有滤色器207。滤色器207可置于微透镜205与光敏元件之间,也可代之以制作在微透镜205上面。滤色器207典型地由颜料或染料材料制成,这种材料只允许通过窄带的光,例如,红、蓝或绿光。在其他实施方式中,滤色器可为青色、黄色或深红色的。这些只是滤色器207的一些示例色,而本发明的意思是拥有任何颜色的滤色器207。虽然使用颜料或染料材料是滤色器最流行的方案,也可使用其他反射型的滤色器,如反射材料的多层叠层。制作滤色器207的技术是熟知的,这里将不再描述,以免不必要地模糊了对本发明的描述。例如,美国专利6,297,071号、6,362,513号和6,271,900号表明了滤色器的技术现状。在图1的俯视图中没有示出加入图像传感器201的红外滤光器。
图3为沿图2的A-A线截取的剖面图,表示本发明的红外滤光器301。可以看到,在半导体衬底301上制作有多个光敏元件303(与图2的像素203相连)。图3将光敏元件表示为光二极管,虽然也可使用其他替代和相当的元件。制作光二极管和其他相关电路的详情在现有技术中都已知道,这里不再重复以免模糊了本发明。然而,现有技术的一些实例可参见美国专利5,904,493号和6,320,617号。
按照一种实施方式,在衬底中制作了像素203后,在衬底301上制作光学透明(至少在部分可见光谱中)的基底材料层305。制作基底材料层305可用覆盖淀积工艺,并可为各种形式的二氧化硅,如热氧化物、化学汽相沉积(CVD)的氧化物、或旋转涂敷的玻璃。基底材料层305也可被设想为层间介质层。
接着,在此基底材料层305上淀积多层叠层307作为红外滤光器。在一种实施方式中,多层叠层307适用于反射波长为660-800nm波段及其以上的光。此多层叠层307包含多对氧化钛/二氧化硅薄膜。在一种实施方式中,6-8对氧化钛/二氧化硅薄膜组成了多层叠层307,然而也可使用更多或更少的薄膜对,这取决于需要反射红外线的程度。用较多数目的薄膜对,可达到较高的反射率,虽然成本增高了。
而且,薄膜的层厚很大程度上依赖于所要反射(亦即,滤除)的中心波长。一般说来,每层薄膜的厚度应为1/4中心波长的量级。因此,要滤除700nm的中心波长,氧化钛和二氧化硅薄膜应为175nm或0.175μm厚。而且应注意,其他材料也可用于制作薄膜对,且本发明应不限于氧化钛/二氧化硅薄膜。在某一替代实施方式中,薄膜对的第一和第二薄膜间可包含一中间层,以提高热稳定性和防止互扩散。例如,此中间层可为碳。
接着,仍参见图3,在多层叠层307上淀积盖层309。此盖层309为1μm厚的量级。应注意,盖层309是可选的。盖层309用来在后面的工艺过程中保护多层叠层307的表面。
接下来,在盖层309上制作滤色器311。滤色器311是用常规工艺制作的。在图3所示的实施方式中,滤色器311为红色、绿色和蓝色,但也可为青色、黄色和深红色。最后,在滤色器311上制作微透镜313。同样,微透镜313可用常规工艺来制作,并可为图3所示的凸起的或其他的形状。
应注意本发明的几个特点。首先,红外滤光器是以多层叠层307来实现的,多层叠层307的特性实质上是反射,因而使入射的红外线偏转而离开像素。这与吸收型的颜料或染料基滤光器成为对照,吸收型的滤光器在红外波段仍可产生噪音且可能不可靠。其次,在一种实施方式中多层叠层307是先于滤色器而制作的。一般说来,在淀积氧化钛/二氧化硅薄膜对时,需加热至较高温度,这可损坏滤色器311(它典型地由有机材料制成)。然而,若后面制作滤色器311的工艺证明是耐热的,多层叠层307也可在滤色器311之后(例如,在其上)制作。对于微透镜313也是这样。第三,将红外滤光器集成在图像传感器上,可减少图像传感器的元件数,因而降低了成本。
从上述可以理解,为了说明的目的,在这里描述了本发明的具体实施方式,但可做出各种修改而没有背离本发明的构思和范围。因此,除了所附权利要求外本发明不受限制。
Claims (6)
1.一种图像传感器,包括:
制作在半导体衬底中的多个像素,每个像素包含光敏元件;
制作在所述多个像素上的多层叠层,所述多层叠层适于滤除红外波段的入射光,其中所述多层叠层包括碳的中间层;
制作在所述多层叠层和所述光敏元件上的多个微透镜。
2.根据权利要求1的图像传感器,还包括制作在每个像素上的滤色器,所述滤色器制作在所述微透镜和所述多层叠层之间。
3.根据权利要求1的图像传感器,还包括制作在每个像素上的滤色器,所述滤色器制作在所述微透镜上。
4.一种图像传感器的像素,包括:
制作在半导体衬底中的光敏元件;
制作在光敏元件上的多层叠层,所述多层叠层适于滤除红外波段的入射光,其中所述多层叠层包括碳的中间层;
制作在所述多层叠层和光敏元件上的微透镜。
5.根据权利要求4的像素,还包括制作在所述微透镜和所述多层叠层之间的滤色器。
6.根据权利要求4的像素,还包括制作在所述微透镜上的滤色器。
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Families Citing this family (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003244560A (ja) * | 2002-02-21 | 2003-08-29 | Seiko Precision Inc | 固体撮像装置 |
US6818962B2 (en) * | 2002-10-25 | 2004-11-16 | Omnivision International Holding Ltd | Image sensor having integrated thin film infrared filter |
US7608811B2 (en) | 2004-05-21 | 2009-10-27 | Aptina Imaging Corporation | Minimal depth light filtering image sensor |
DE102004036469A1 (de) * | 2004-07-28 | 2006-02-16 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Kameramodul, hierauf basierendes Array und Verfahren zu dessen Herstellung |
KR100644521B1 (ko) * | 2004-07-29 | 2006-11-10 | 매그나칩 반도체 유한회사 | 마이크로렌즈의 겉보기 크기가 향상된 이미지센서 및 그제조 방법 |
JP4447988B2 (ja) * | 2004-08-24 | 2010-04-07 | パナソニック株式会社 | 固体撮像装置、その製造方法およびカメラ |
US7456384B2 (en) | 2004-12-10 | 2008-11-25 | Sony Corporation | Method and apparatus for acquiring physical information, method for manufacturing semiconductor device including array of plurality of unit components for detecting physical quantity distribution, light-receiving device and manufacturing method therefor, and solid-state imaging device and manufacturing method therefor |
JP4882297B2 (ja) * | 2004-12-10 | 2012-02-22 | ソニー株式会社 | 物理情報取得装置、半導体装置の製造方法 |
KR100717281B1 (ko) * | 2005-09-22 | 2007-05-15 | 삼성전자주식회사 | 이미지 센서의 형성 방법 및 그에 의해 형성된 이미지 센서 |
JP2007141876A (ja) * | 2005-11-14 | 2007-06-07 | Sony Corp | 半導体撮像装置及びその製造方法 |
US20070235771A1 (en) * | 2006-04-05 | 2007-10-11 | Yan-Hsiu Liu | Semiconductor image sensor and method for fabricating the same |
JP4193870B2 (ja) * | 2006-05-09 | 2008-12-10 | ソニー株式会社 | 固体撮像素子、撮像装置 |
TW200803449A (en) * | 2006-06-02 | 2008-01-01 | Visera Technologies Co Ltd | Image sensing device and package method therefor |
US7965444B2 (en) * | 2006-08-31 | 2011-06-21 | Micron Technology, Inc. | Method and apparatus to improve filter characteristics of optical filters |
US7737394B2 (en) * | 2006-08-31 | 2010-06-15 | Micron Technology, Inc. | Ambient infrared detection in solid state sensors |
US7960807B2 (en) * | 2007-02-09 | 2011-06-14 | Intersil Americas Inc. | Ambient light detectors using conventional CMOS image sensor process |
CN101350893B (zh) * | 2007-07-19 | 2011-11-30 | 鸿富锦精密工业(深圳)有限公司 | 影像传感器及相机模组 |
JP5268436B2 (ja) * | 2008-06-06 | 2013-08-21 | キヤノン株式会社 | 光学フィルタ及び撮像装置 |
US20110009694A1 (en) | 2009-07-10 | 2011-01-13 | Schultz Eric E | Hand-held minimally dimensioned diagnostic device having integrated distal end visualization |
US8717417B2 (en) | 2009-04-16 | 2014-05-06 | Primesense Ltd. | Three-dimensional mapping and imaging |
CN102483353B (zh) | 2009-09-01 | 2015-07-22 | 皇家飞利浦电子股份有限公司 | 利用非发散元件的高光谱分辨率颜色传感器 |
US9030528B2 (en) * | 2011-04-04 | 2015-05-12 | Apple Inc. | Multi-zone imaging sensor and lens array |
US8466000B2 (en) | 2011-04-14 | 2013-06-18 | United Microelectronics Corp. | Backside-illuminated image sensor and fabricating method thereof |
US9312292B2 (en) | 2011-10-26 | 2016-04-12 | United Microelectronics Corp. | Back side illumination image sensor and manufacturing method thereof |
US8318579B1 (en) | 2011-12-01 | 2012-11-27 | United Microelectronics Corp. | Method for fabricating semiconductor device |
US8815102B2 (en) | 2012-03-23 | 2014-08-26 | United Microelectronics Corporation | Method for fabricating patterned dichroic film |
US9401441B2 (en) | 2012-06-14 | 2016-07-26 | United Microelectronics Corporation | Back-illuminated image sensor with dishing depression surface |
CN102693995B (zh) * | 2012-06-20 | 2015-06-03 | 中国科学院上海高等研究院 | 图像传感器 |
US8779344B2 (en) | 2012-07-11 | 2014-07-15 | United Microelectronics Corp. | Image sensor including a deep trench isolation (DTI)that does not contact a connecting element physically |
US9111832B2 (en) * | 2012-10-29 | 2015-08-18 | Omnivision Technologies,Inc. | Infrared reflection/absorption layer for reducing ghost image of infrared reflection noise and image sensor using the same |
US8828779B2 (en) | 2012-11-01 | 2014-09-09 | United Microelectronics Corp. | Backside illumination (BSI) CMOS image sensor process |
US8779484B2 (en) | 2012-11-29 | 2014-07-15 | United Microelectronics Corp. | Image sensor and process thereof |
CN103139430A (zh) * | 2013-03-20 | 2013-06-05 | 深圳市怡化电脑有限公司 | 图像扫描装置 |
US9279923B2 (en) | 2013-03-26 | 2016-03-08 | United Microelectronics Corporation | Color filter layer and method of fabricating the same |
US9537040B2 (en) | 2013-05-09 | 2017-01-03 | United Microelectronics Corp. | Complementary metal-oxide-semiconductor image sensor and manufacturing method thereof |
US9129876B2 (en) | 2013-05-28 | 2015-09-08 | United Microelectronics Corp. | Image sensor and process thereof |
US9054106B2 (en) | 2013-11-13 | 2015-06-09 | United Microelectronics Corp. | Semiconductor structure and method for manufacturing the same |
US9841319B2 (en) | 2013-11-19 | 2017-12-12 | United Microelectronics Corp. | Light detecting device |
US20150187832A1 (en) * | 2013-12-26 | 2015-07-02 | United Microelectronics Corp. | Image sensor and method for fabricating the same |
US11547446B2 (en) | 2014-01-13 | 2023-01-10 | Trice Medical, Inc. | Fully integrated, disposable tissue visualization device |
US9370295B2 (en) | 2014-01-13 | 2016-06-21 | Trice Medical, Inc. | Fully integrated, disposable tissue visualization device |
CN105206630A (zh) * | 2014-06-18 | 2015-12-30 | 上海华力微电子有限公司 | Cmos感光元件及制备方法 |
CN113243977A (zh) | 2015-08-11 | 2021-08-13 | 特里斯医疗有限公司 | 完全集成的一次性组织可视化装置 |
AU2017233052A1 (en) | 2016-03-17 | 2018-09-20 | Trice Medical, Inc. | Clot evacuation and visualization devices and methods of use |
EP3773235B1 (en) | 2018-03-29 | 2023-07-19 | Trice Medical, Inc. | Fully integrated endoscope with biopsy capabilities |
CN110854142A (zh) * | 2018-08-21 | 2020-02-28 | 豪威科技股份有限公司 | 并入有选择性红外滤光器的组合式可见及红外图像传感器 |
Family Cites Families (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2637616A1 (de) * | 1976-08-20 | 1978-02-23 | Siemens Ag | Filter fuer fotodetektoren |
ZA811931B (en) * | 1980-03-31 | 1982-05-26 | African Oxygen Ltd | Process and apparatus for the separation of gaseous mixture |
US4691243A (en) * | 1984-05-04 | 1987-09-01 | Energy Conversion Devices, Inc. | Contact-type document scanner including protective coating |
JPS6358739A (ja) * | 1986-08-29 | 1988-03-14 | Hitachi Ltd | 表示装置用面板 |
JPS63269103A (ja) * | 1987-04-28 | 1988-11-07 | Toshiba Electric Equip Corp | 反射体 |
US5071450A (en) * | 1990-09-14 | 1991-12-10 | Air Products And Chemicals, Inc. | Modified carbon molecular sieve adsorbents |
US5453611A (en) * | 1993-01-01 | 1995-09-26 | Canon Kabushiki Kaisha | Solid-state image pickup device with a plurality of photoelectric conversion elements on a common semiconductor chip |
US5451444A (en) * | 1993-01-29 | 1995-09-19 | Deliso; Evelyn M. | Carbon-coated inorganic substrates |
JPH0774331A (ja) * | 1993-09-02 | 1995-03-17 | Nikon Corp | マイクロレンズ付き固体撮像素子及びその製造方法 |
US5319114A (en) * | 1993-09-23 | 1994-06-07 | Arco Chemical Technology, L. P. | Olefin epoxidation using a carbon molecular sieve impregnated with a transition metal |
US5648653A (en) * | 1993-10-22 | 1997-07-15 | Canon Kabushiki Kaisha | Optical filter having alternately laminated thin layers provided on a light receiving surface of an image sensor |
US5625210A (en) * | 1995-04-13 | 1997-04-29 | Eastman Kodak Company | Active pixel sensor integrated with a pinned photodiode |
DE19530797A1 (de) * | 1995-08-22 | 1997-02-27 | Hyplast Nv | Kompositmaterial zur Abschirmung von Strahlung |
US6320617B1 (en) * | 1995-11-07 | 2001-11-20 | Eastman Kodak Company | CMOS active pixel sensor using a pinned photo diode |
GB2312090A (en) | 1996-04-10 | 1997-10-15 | Rank Taylor Hobson Ltd | Photosensitive device |
US5825092A (en) * | 1996-05-20 | 1998-10-20 | Harris Corporation | Integrated circuit with an air bridge having a lid |
US6271900B1 (en) * | 1998-03-31 | 2001-08-07 | Intel Corporation | Integrated microlens and color filter structure |
TW370727B (en) | 1998-06-04 | 1999-09-21 | United Microelectronics Corp | Method for removing color filter films of CMOS sensor |
US6297071B1 (en) | 1998-07-22 | 2001-10-02 | Eastman Kodak Company | Method of making planar image sensor color filter arrays |
US6252218B1 (en) * | 1999-02-02 | 2001-06-26 | Agilent Technologies, Inc | Amorphous silicon active pixel sensor with rectangular readout layer in a hexagonal grid layout |
KR100307692B1 (ko) * | 1999-06-02 | 2001-09-24 | 윤덕용 | 구조 규칙성 탄소 분자체 물질, 이의 제조 방법 및 이의 용도 |
US6362513B2 (en) | 1999-07-08 | 2002-03-26 | Intel Corporation | Conformal color filter layer above microlens structures in an image sensor die |
IT1313260B1 (it) * | 1999-07-28 | 2002-07-17 | St Microelectronics Srl | Dispositivo fotosensore integrato su semiconduttore e relativoprocesso di fabbricazione. |
US6171885B1 (en) | 1999-10-12 | 2001-01-09 | Taiwan Semiconductor Manufacturing Company | High efficiency color filter process for semiconductor array imaging devices |
US6339248B1 (en) * | 1999-11-15 | 2002-01-15 | Omnivision Technologies, Inc. | Optimized floating P+ region photodiode for a CMOS image sensor |
US6503295B1 (en) * | 2000-09-20 | 2003-01-07 | Chevron U.S.A. Inc. | Gas separations using mixed matrix membranes |
US20020063214A1 (en) * | 2000-11-29 | 2002-05-30 | Taiwan Semiconductor Manufacturing Co. Ltd. | Optoelectronic microelectronic fabrication with infrared filter and method for fabrication thereof |
JP2002252338A (ja) * | 2000-12-18 | 2002-09-06 | Canon Inc | 撮像装置及び撮像システム |
US6436851B1 (en) | 2001-01-05 | 2002-08-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for spin coating a high viscosity liquid on a wafer |
JP4033286B2 (ja) * | 2001-03-19 | 2008-01-16 | 日本板硝子株式会社 | 高屈折率誘電体膜とその製造方法 |
KR100420787B1 (ko) * | 2001-04-30 | 2004-03-02 | 한국과학기술원 | 탄소 분자체 및 그의 제조 방법 |
US6590239B2 (en) * | 2001-07-30 | 2003-07-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Color filter image array optoelectronic microelectronic fabrication with a planarizing layer formed upon a concave surfaced color filter region |
TW513809B (en) * | 2002-02-07 | 2002-12-11 | United Microelectronics Corp | Method of fabricating an image sensor |
US6808960B2 (en) * | 2002-10-25 | 2004-10-26 | Omni Vision International Holding Ltd | Method for making and packaging image sensor die using protective coating |
US6818962B2 (en) * | 2002-10-25 | 2004-11-16 | Omnivision International Holding Ltd | Image sensor having integrated thin film infrared filter |
KR100474854B1 (ko) * | 2003-02-13 | 2005-03-10 | 삼성에스디아이 주식회사 | 탄소 분자체 및 그 제조 방법 |
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- 2002-10-25 US US10/280,497 patent/US6818962B2/en not_active Expired - Lifetime
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CN101477996B (zh) | 2011-06-29 |
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US20040082092A1 (en) | 2004-04-29 |
TWI239646B (en) | 2005-09-11 |
EP1414068A3 (en) | 2005-09-21 |
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