CN101536161A - 温控多气体分配组件 - Google Patents
温控多气体分配组件 Download PDFInfo
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- 238000009826 distribution Methods 0.000 title abstract description 19
- 239000012530 fluid Substances 0.000 claims abstract description 122
- 238000000034 method Methods 0.000 claims abstract description 45
- 238000012545 processing Methods 0.000 claims abstract description 43
- 230000008569 process Effects 0.000 claims description 38
- 238000000429 assembly Methods 0.000 claims description 32
- 230000000712 assembly Effects 0.000 claims description 32
- 239000000463 material Substances 0.000 claims description 22
- 238000007789 sealing Methods 0.000 claims description 9
- 238000000926 separation method Methods 0.000 claims description 8
- 210000003722 extracellular fluid Anatomy 0.000 claims 1
- 239000007789 gas Substances 0.000 abstract description 126
- 239000000758 substrate Substances 0.000 abstract description 47
- 238000005516 engineering process Methods 0.000 description 15
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 238000002156 mixing Methods 0.000 description 10
- 239000000203 mixture Substances 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 9
- 238000000151 deposition Methods 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 230000008021 deposition Effects 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910010293 ceramic material Inorganic materials 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 230000002349 favourable effect Effects 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000005266 casting Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 230000008676 import Effects 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- 238000010008 shearing Methods 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 208000005168 Intussusception Diseases 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005219 brazing Methods 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000002788 crimping Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000007788 roughening Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000007306 turnover Effects 0.000 description 2
- NFGXHKASABOEEW-UHFFFAOYSA-N 1-methylethyl 11-methoxy-3,7,11-trimethyl-2,4-dodecadienoate Chemical compound COC(C)(C)CCCC(C)CC=CC(C)=CC(=O)OC(C)C NFGXHKASABOEEW-UHFFFAOYSA-N 0.000 description 1
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000005046 Chlorosilane Substances 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 1
- ODUCDPQEXGNKDN-UHFFFAOYSA-N Nitrogen oxide(NO) Natural products O=N ODUCDPQEXGNKDN-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229920002472 Starch Polymers 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 125000003368 amide group Chemical group 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910000085 borane Inorganic materials 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- 230000006315 carbonylation Effects 0.000 description 1
- 238000005810 carbonylation reaction Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000012707 chemical precursor Substances 0.000 description 1
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 1
- UBHZUDXTHNMNLD-UHFFFAOYSA-N dimethylsilane Chemical compound C[SiH2]C UBHZUDXTHNMNLD-UHFFFAOYSA-N 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- KCWYOFZQRFCIIE-UHFFFAOYSA-N ethylsilane Chemical compound CC[SiH3] KCWYOFZQRFCIIE-UHFFFAOYSA-N 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- PDPJQWYGJJBYLF-UHFFFAOYSA-J hafnium tetrachloride Chemical compound Cl[Hf](Cl)(Cl)Cl PDPJQWYGJJBYLF-UHFFFAOYSA-J 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000033444 hydroxylation Effects 0.000 description 1
- 238000005805 hydroxylation reaction Methods 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical compound [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 235000019698 starch Nutrition 0.000 description 1
- 239000008107 starch Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- LALRXNPLTWZJIJ-UHFFFAOYSA-N triethylborane Chemical group CCB(CC)CC LALRXNPLTWZJIJ-UHFFFAOYSA-N 0.000 description 1
- UORVGPXVDQYIDP-UHFFFAOYSA-N trihydridoboron Substances B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- KPGXUAIFQMJJFB-UHFFFAOYSA-H tungsten hexachloride Chemical compound Cl[W](Cl)(Cl)(Cl)(Cl)Cl KPGXUAIFQMJJFB-UHFFFAOYSA-H 0.000 description 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45572—Cooled nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
Abstract
本发明提供一种气体分配板的设备及方法。气体分配板具有一第一歧管，第一歧管包括用以提供至少两种不同气体至衬底上方的处理区域的多个同心通道。多个通道的一部分执行热控制的功能，并与其它通道分隔开，藉以在气体分配板中提供分隔的气流通道。气流通道与第二歧管为流体连通，且第二歧管包括多个同心环。形成于环中的孔洞与气流通道及处理区域为流体连通。气体提供至处理区域的衬底上方，而不在气体分配板内进行混合。
Description
发明背景
发明领域
本发明涉及一种用于处理衬底(例如半导体晶片)的设备，特别是一种用于将处理流体分配至衬底上方的设备。
相关技术描述
半导体处理系统通常包括一处理室，该处理室具有一用以将衬底(例如半导体晶片)支撑于处理室中而使衬底邻近处理区域的台座。处理室形成一真空密闭室，以部分地界定上述处理区域。气体分配组件或是喷气头提供一或多种处理气体至处理区域，这些气体接着被加热及/或激发以形成电浆，而电浆用以在衬底上执行部分工艺。这些工艺包括：沉积工艺，例如化学气相沉积(CVD)，以在衬底上沉积薄膜；或是一蚀刻反应，以自衬底上移除材料，等其他工艺。
在需要多种气体的工艺中，这些气体可以在混合室中进行混合，且接着混合室透过导管而耦接至气体分配组件。举例来说，在传统的热CVD工艺中，两种处理气体伴随着其各自的载气而供应至混合室中，且这些气体在混合室中结合形成一气体混合物。气体混合物可以直接导入处理室中，或是可以通过处理室的上方部分的导管而至分配组件。分配组件一般包括具有多个孔的板，藉此，气体混合物可以均匀地分配进入衬底上方的处理区域。在另一实例中，两种气体分别地通过分配组件，并在到达处理区域及/或衬底之前允许该些气体结合。当气体混合物进入处理区域并注入热能时，化学反应在处理气体之间发生，因而造成在衬底上的化学气相沉积反应。
虽然在气体进入处理区域之前将其混合一般是有利的，例如，可确保组成气体可均匀地分配至处理区域中，但是这些气体会倾向在混合室或分配板中开始产生还原或反应。结果，在气体混合物到达处理区域之前，会发生在混合室、导管、分配板及其它室组件上的沉积或蚀刻现象。另外，反应副产物可能会累积在气体分配组件中或是分配板的内部表面上，因而，产生及/或增加不欲其产生的微粒的出现。
当气体释放至处理区域时，控制气体的温度对于控制这些气体的反应性是有利的。举例来说，在将这些气体释放至处理区域之前，将气体进行冷却对于控制不期望的反应发生能够是有利的。抑制气体反应直到其与加热的衬底接触为止。在其它情况下，加热衬底是必须的。举例来说，热气体清除或清洗可协助自处理室中移除污染物。因此，将温度控制方案整合至气体分配板是有利的。
虽然部分气体分配装置已发展而可减少在气体进入处理区域之前的混合动作，但该装置会倾向在处理的过程中过早发生劣化现象。举例来说，传统分配装置可能是由会在处理过程中产生膨胀及缩小的材料制成，因而导致装置或处理室的其它部件的劣化。传统装置亦可能需要以大型弹性密封件进行密封，例如大直径的O型圈，其可能会随着时间劣化，因而导致装置内部的泄漏。再者，传统装置输送两者或更多种气体至处理区域，而其可能无法在处理区域中混合均匀，因而导致衬底上的非均一沉积现象。
因此，对于可传送至少两种气体进入处理区域，而在到达处理区域之前不会进行气体混合且亦可同时控制气体温度的气体分配装置具有持续的需求。另外，亦需要一种气体分配装置，其可不使用大型O型圈而进行密封。
发明内容
本发明的实施例关于用以将处理流体传送至处理室以在衬底上沉积薄膜、蚀刻衬底及进行其它工艺的设备及方法。
在一实施例中，描述一种用于将处理流体传送至处理室的设备。该设备包括：一第一歧管，其具有至少部分地形成在其中的多个分离流体通道；以及一第二歧管，耦接至第一歧管，多个分离流体通道的一部分包括与第二歧管为连通的第一及第二气体通道。
在另一实施例中，描述一种用于处理室的盖组件。该盖组件包括：一上方歧管，具有界定而穿设于其中的流体分离的第一及第二流动路径；以及一下方歧管，具有一顶侧及一底侧，顶侧耦接至上方歧管，底侧则具有流体耦接至第一流动路径的多个第一出口，以及流体耦接至第二流动路径的多个第二出口，其中，下方歧管包括多个同心环，其具有一内表面，且该内表面与一邻接环的一外表面密接，而适以在其之间形成一材料与材料之间的密封(material tomaterial seal)。
在另一实施例中，描述一种用于将处理流体传送至处理室的设备。该设备包括：一歧管组件，具有一顶侧及一底侧，该顶侧具有部分地形成于其上的多个流体分离的圆形通道，该底侧具有形成于其中的多个环状出口；以及一盖板，具有一顶部、一底部及一边缘，其中盖板的底部耦接至歧管组件的顶侧，且盖板具有穿设于其中的至少两个气体通道以及多个热控制流体通道，该至少两个气体通道及该多个热控制流体通道与该多个圆形通道为流体连通。
在另一实施例中，描述一种用于处理室的盖组件。该盖组件包括：一上方歧管，具有部分地形成于其中的多个流体分离的通道；以及一下方歧管，耦接至上方歧管，其中流体分离的该多个通道的一第一部分包括与下方歧管为流体连通的第一及第二气体通道，流体分离的该多个通道的一第二部分包括多个热控制通道。
在另一实施例中，描述一种用于将处理流体传送至处理室的设备。该设备包括：一歧管组件，具有一顶侧及一底侧，该顶侧具有部分地形成于其上的多个流体分离的圆形通道，该底侧具有形成于其中的多个环状出口；以及一盖板，具有一顶部、一底部及一边缘，其中盖板的底部耦接至歧管组件的顶侧，且盖板具有穿设于其中的至少两个气体通道以及多个热控制流体通道，该至少两个气体通道及该多个热控制流体通道与该多个圆形通道为流体连通。
在另一实施例中，描述一种制造气体分配板的方法。该方法包括：提供一盖板，该盖板具有形成于其中的多个径向气体通道；提供一第一歧管，该第一歧管具有形成于其中的多个圆形通道，其中多个圆形通道的一部分界定第一及第二气体通道；提供第二歧管，该第二歧管具有形成于其中的多个环状沟槽，其中第一及第二气体通道与该多个环状沟槽为流体连通；以及耦接第一及第二歧管以形成气体分配板。
附图简要说明
为让本发明的上述特征更明显易懂，可配合参考实施例说明，其部分乃如附图中绘示。须注意的是，虽然附图仅揭露本发明特定实施例，但其并非用以限定本发明的精神与范围，任何熟知本领域的技术人员，当可作各种的更动与润饰而得等效实施例。
图1，绘示处理室的一实施例的概要剖面视图；
图2，绘示图1所示的处理室的剖面视图，其已沿着纵轴而旋转；
图3A，绘示上方歧管的一实施例的概要俯视图；
图3B，绘示图3A所示的上方歧管的概要俯视图；
图3C，绘示图3A所示之上方歧管的另一概要俯视图；
图4A，绘示盖组件之一实施例的分解等角视图；
图4B，绘示盖组件之一部件的详细剖面概要视图；以及
图5，绘示可用于实施本发明盖组件的一部分的详细视图。
为便于了解，图式中相同的组件符号表示相同的组件。某一实施例采用的组件当不需特别详述而可应用到其它实施例。
具体描述
图1绘示处理室100的一实施例的剖面视图。处理室100包括一设置于内部空间101内的衬底支撑件102。衬底104(例如半导体晶片)可藉由设置于处理室100的壁中的开口103而进出内部空间101。处理室100亦包括盖组件105，盖组件105耦接至处理室100的上表面，而形成内部空间101的至少一部分的边界。在本实施例中，盖组件105包括盖板112、与盖板112为流体连通的上方歧管113、与上方歧管113为流体连通的下方歧管114以及一盖环115。
在一实施例中，盖组件105的下表面与衬底104的上表面界定一处理区域106。盖组件105的下方歧管114与处理区域106为流体连通。在一特定实施例中，处理室100包括一环状元件，例如遮蔽环109，其环绕衬底支撑件102的一部分而与衬底104相邻。当衬底支撑件102升高至处理位置时，遮蔽环109适以接触衬底支撑件102。当衬底支撑件102升高，遮蔽环109的周围部分实质将衬底支撑件102的下方部分与处理区域106隔绝开。此隔绝预防或减少处理气体导入部分的内部空间101中。内部空间101的体积(如藉由处理区域106所界定)的减少，会降低提供至处理室100的处理气体的体积。
在一实施例中，处理区域106的体积由衬底104的上表面与盖105的下表面之间的距离所界定。在进行处理以使衬底104进出之前及之后，衬底支撑件102可以升高及降低。透过耦接至真空泵(图中未示)的环状真空通道124及真空口111而可维持处理室101中的真空，并将任何未沉积的气体自处理室100排出。
衬底支撑件102可以由传导或非传导材料形成，例如金属(如：铝、钢、不锈钢、镍、铬、其合金或其组合物)或陶瓷材料。取决于特定的实施例，衬底104可以在预处理步骤、沉积步骤、后处理步骤或其它用于制造工艺期间的工艺步骤之前及/或其过程中，加热至期望温度。
在一实例中，可以利用嵌设的加热元件(图中未示)来加热衬底支撑件102，例如：电阻加热器或是形成在衬底支撑件102中以供应流体的导管。在另一实例中，衬底支撑件102可以利用辐射加热器而加热，例如灯(图中未示)。
例如一或多个热电偶(图中未示)的温度传感器亦可嵌设于衬底支撑件102中以监控衬底支撑件102的温度。所量测的温度可用于反馈回路中以控制针对加热元件的电源供应，藉此，衬底104的温度可以维持或控制在期望的温度下，而适于特定的处理应用。衬底升举销(图中未示)亦可设置于衬底支撑件102中，并用以将衬底104自支撑表面升高及降低，以促进衬底104传输进出处理室100。
于一实施例中，流体(例如为气体)通过控制阀(例如阀107A)而导入处理室100中，而阀107A耦接至盖组件105之入口116。阀107A适以耦接至处理流体源F1。阀107A可以为任何用以控制流体或气流的控制阀，例如气动阀、磁性阀、或电致动阀。控制阀可经偏压而开启或关闭，并经致动而在短时间内开启或关闭，以提供气体或连续气流的脉冲。适当的阀可购自日本大阪的Fujikin公司以及Richmond，California(加州里奇蒙)的Veriflo公司。
原子层沉积(ALD)工艺利用控制阀(例如阀107A)以产生气体脉冲至处理区域106。举例来说，阀107A可配置以提供介于10毫秒～5秒的开启/关闭循环。在一实例中，阀107A可以快速地产生脉冲约小于1秒，例如介于约10毫秒～约1秒，例如介于约50毫秒～700毫秒，或是介于约100毫秒～约500毫秒。在另一实例中，阀107A可较慢速地脉冲，例如大于约1秒，例如介于约1秒～约5秒，例如介于约1.5秒～约4秒，或是介于约2秒～约3秒。
图2是图1的处理室100的另一实施例的剖面视图，其沿着纵轴而旋转。除了入口106(图1)之外，盖组件更包括入口200。入口200适以耦接阀107B，阀107B接着与流体源F2耦接，而流体源F2不同于与阀107A耦接的流体源F1(图1)。在一实施例中，阀107A、107B分隔开，但两者为类似，其各自可如上述般提供流体或气体的脉冲或连续流。此种系统可用于将两种气体同时流经两个分离的流体通道。由图1及图2所示的实施例可延伸至具有两个以上之气体通道的实施例。
图1及图2所示的实施例可配置以在原子层沉积(ALD)工艺、化学气相沉积(CVD)工艺、或是金属-有机或有机-金属CVD(MOCVD或OMCVD)工艺而在衬底上沉积材料。一般来说，此处所述的实施例可用于：高或低压工艺、高或低温以及连续或脉冲的气流、或是同步或交替的气流。耦接至阀107A、107B的流体源F1、F2可提供：金属卤化物，例如：四氯化铪(HfCl4)、六氟化钨(WF6)、或六氯化钨(WCl6)；金属羰基化合物，例如：羰化钨(W(CO)6)；还原性化合物，例如：氨(NH3)、氢(即，H2或原子H)、肼(N2H4)、硅烷(SiH4)、二硅烷(Si2H6)、三硅烷(Si3H8)、四硅烷(Si4H10)、二甲基硅烷(SiC2H8)、甲基硅烷(SiCH6)、乙基硅烷(SiC2H8)、氯硅烷(ClSiH3)、二氯硅烷(Cl2SiH2)、六氯二硅烷(Si2Cl2)、硼烷(BH3)、二硼烷(B2H6)、三硼烷、四硼烷、五硼烷、三乙基硼烷(Et3B)、其衍生物、其等离子体或其组合；氧化性化合物，例如：氧(O2)、臭氧(O3)、水(H2O)、氧化亚氮(N2O)、氧化氮(NO)、二氧化氮(NO2)、其衍生物及其组合；以及载气，例如：氦气、氩气、氖气、氮气、氢气及其它化学前驱物，例如：金属-有机或有机-金属前驱物，例如：烷基金属、酰胺基金属、亚胺基金属、芳族烃金属、芳香基金属或其衍生物或其组合。本发明的实施例中可使用的衬底包括但不限于为半导体晶片，例如结晶硅(如：Si<100>或Si<111>)、氧化硅、应变硅、氮化硅、硅锗、锗、砷化镓、玻璃、蓝宝石、金属、金属合金、金属氮化物、掺杂或未掺杂多晶硅、掺杂或未掺杂硅晶片以及图案化或未图案化晶片。衬底可暴露于预处理工艺以研磨、蚀刻、还原、氧化、羟化、退火及/或烘烤衬底表面。
参照图1及图2，盖组件105的一实施例包括一盖板112、一第一或上方歧管113、一第二或下方歧管114以及一盖环115。盖板112包括二个横向导管，例如通道117、202，其通过上方歧管113与下方歧管114而与处理区域106为流体连通。通道117、202可以径向设置于盖板112的不同平面内。盖板112可以由任何适当的方法形成，例如：机械加工、浇铸、模塑、铜焊、或其组合。通道117、202可藉由任何传统方法而形成在盖板112里面，包括钻孔以及辗压，且在一实施例中，通道117、202偏移45度，且彼此上下间隔设置。在一实施例中，通道117、202利用深孔加工(gun-drill)形成。
盖板112可以由例如铝、不锈钢、镍、其合金或其混合物，或陶瓷材料形成。在一实施例中，当钻孔形成通道117、202时，通道117、202的开启端由柱塞(plug)118、203来密封之。柱塞118、203可由金属(如上列举的那些金属)、陶瓷、或是有机或无机聚合材料形成。柱塞118、203一般由与盖板112的材料具有相似的膨胀系数的材料制成。其它在盖板112中形成入口及歧管的方法例如为浇铸、焊接或铜焊，而这些方法可以不需柱塞来预防气体的泄漏。
在一实施例中，盖板112包括两个气体入口116、200，且入口116、200流体耦接至阀107A、107B，二流体(可为气相或蒸气相)通过阀107A、107B而导入处理室100中。入口116、200分别连接至通道117、202，而通道117、202与处理区域106为流体连通。因此，来自流体源F1的气体通过与入口116耦接的阀107A而进入通道117中。来自流体源F1的气体接着通过通道117而进入开口220A，并流入形成于上方歧管113中的通道119。来自流体源F2的气体通过与入口200耦接的阀107B而进入通道202中。来自流体源F2的气体接着通过通道202而进入开口220B，并流入形成于上方歧管113中的通道204，且当来自流体源F1及F2的气体到达上方歧管113时，气体仍然在两个不同的流动路径保持隔离。
在一实施例中，上方气体通道119、204在上方歧管113中排置成圆形通道图案。圆形通道119、204通过孔洞205A、205B而耦接至下方歧管114，其将于下方详细描述之。
图3A为上方歧管113的一实施例的俯视图。上方歧管113包括多个流体通道301，其设置于上方气体通道119、204之间并与气体通道119、204分隔开。上方歧管113亦包括多个外部流体通道302。各个流体通道301、302提供有一导管，以供热控制流体流动于其中，因而对上方歧管113提供较佳的热控制。热控制流体可以为液体或气体。可使用的液体包括水(例如去离子水)、油、乙醇、乙二醇、乙二醇醚、其它有机溶剂、超临界流体(例如，CO2)、其衍生物或其混合物。气体可包括氮气、氩气、空气、氢氟碳化物(HFCs)、或是其混合物。热控制流体通过形成在盖板112的孔洞401、402(图3B、3C及4A)而进入及离开上方歧管113。上方歧管113由具工艺抗性及/或化学兼容性的材料制成，例如：铝、不锈钢、陶瓷材料及其组合。上方歧管113可以为模塑、浇铸、机械加工或其组合而制成。在一实施例中，盖板112及上方歧管113可以铜焊在一起以形成单一板，其具有气体输送及热控制特征结构整合于其中。在一实施例中，上方歧管113及盖板112的紧配表面形成一剪力密封(shear seal)。表面可以藉由抛光(lapping)或其它适合技术而完成。
上方气体通道119、204及流体通道301、302各个界定出导管，导管具有一侧适以由盖板112的下表面所密封(当盖板112耦接至导管时)。上方气体通道119、204及流体通道301、302可具有的剖面形状包括：具有圆角的U型、具有实质方角的U型及其组合。在上方歧管113的中央部分中，各个上方气体通道119、204由流体通道301分隔开。上方气体通道119、204与流体通道301之间的环状壁提供各个气体及流体的分别流动路径。当盖板112耦接至上方歧管113以预防热控制流体与气体之间的污染时，上方气体通道119、204与流体通道301、302为分隔开且密封的。
流体通道301、302与气体通道119、204的配置并不限于图中所示的数量及配置。亦可使用较多或较少数量的流体通道301、302与气体通道119、204，且流体通道301、302与气体通道119、204可以在上方歧管113中形成任何期望的形状。举例来说，可以使用较多的内部通道301及较少的外部通道302，反之亦然。其它实施例亦可包括具有不同剖面形状的通道，例如完整圆形。其它实施例可包括更为垂直的配置，例如形成在盖板112及/或上方歧管113其中之一中的通道层。
图3B为上方歧管113的概要俯视图，其显示通道117与气体通道119之间的位置关系。在此实施例中，为了清楚表示，流体通道301、302以虚线显示，且气体通道204并未示出。如上所述，通道117的开口220A与气体通道119为流体连通。孔洞205A与下方歧管114为流体连通，且设置于偏移开口220A约45度角之处，藉此，来自流体源F1的气体可导引通过阀107A、流经气体通道119、并传送至下方歧管114，而不与来自流体源F2的气体以及热控制流体混合。实施例并不限制孔洞205A的数量及定位，更多或更少的孔洞205A可增设至气体通道119中的不同的径向位置及/或不同偏移角度。
图3C为上方歧管113的概要俯视图，其显示通道202与气体通道204之间的位置关系。在此实施例中，为了清楚表示，流体通道301、302以虚线显示，且气体通道119并未示出。如上所述，通道202的开口220B与气体通道204为流体连通。孔洞205B与下方歧管114为流体连通，且设置于偏移开口220B约45度角之处，藉此，来自流体源F2的气体可导引通过阀107B、流经气体通道204、并传送至下方歧管114，而不与来自流体源F1的气体以及热控制流体混合。实施例并不限制孔洞205B的数量及定位，更多或更少的孔洞205B可增设至气体通道204中的不同的径向位置及/或不同偏移角度。
图4A为盖组件105的等角分解视图。所显示的下方歧管114分解为其构成的套叠环121、206，当组合套叠环121、206时会形成下方歧管114。在一实施例中，环121、206经过精准制造，以使其不需使用O型圈、衬垫或相似物而能密封。在一实施例中，环121、206在其相接触的内径及外径部分之间会形成剪力密封。环121、206藉由重叠(lapping)来形成，且各个环121、206的内、外径保持在公差内，其中，在环121、206的接触点形成材料与材料之间的密封。材料与材料之间的密封提供实质的气密密封，其用于使界定于环121、206之间的气体通道之间的泄漏最小化及/或预防泄漏。
环121、206中的孔洞123、207分别通过孔洞205A、205B而与通道119、204为流体连通。因此，来自盖板112的入口116、200的气体流经上方歧管113而进入下方歧管114。来自流体源F1及F2的气体分别流经盖板112的入口116、200。热冷却流体系流经盖板112的孔洞401、402。在各种部件中的开口及通道的配置可以藉由各种方式改变以提供不同实施例。举例来说，可提供呈现任何几何最佳图案的多个开口。同样地，开口可以如图所示而对齐，或是其可以为交错设置的。开口亦可按一定尺寸制作而使得在设备中的流动及压力分布最佳化。
图4B为环206的部分剖面视图，其类似于环121的构造。在此实施例中，环206沿着内径及外径而精确磨平、重叠(lapped)、或抛光，以制造出与紧配环的剪力密封，并使得通过下方歧管114的气体泄漏情形最小化及/或预防泄漏。环206具有一延伸顶部408，延伸顶部408在环206的周围形成一突出部。孔洞207穿设于顶部408。顶部408由第一外半径403及第一内半径405(参照环206的中央线411所量测)所界定。环206亦包括由第二外半径407及第二内半径406所界定的底部。各个环206亦包括由第三外半径404所界定的间隙208。第一内半径405与第二内半径406的差别造成一肩部410界定在环206的内部。上方关于环206的半径亦可改变以形成环121、206的不同实施例。
环121、206可以由硬质材料形成，其可耐受超过1000℃的高温，并具有低热膨胀系数。此材料可以为硬质材料，例如碳化硅、硅石墨、蓝宝石、石英、陶瓷材料或其它硬质材料。
将图4B的实施例做一延伸，各个环包括第一外直径及第二外直径，且在两者之间包括一第三外直径，其中第三直径为间隙208。各个环亦包括第一内直径及第二内直径，以形成一肩部410。如下将会详细描述者，一环的第一外直径适以与另一环的第一内直径压接或滑接。
环121、206适以安装在一起以形成下方歧管114，其中一环的延伸顶部408与另一环的肩部410邻接。在一实施例中，一环的第一外半径403(由中央线411量测)些微小于另一环的第一内半径405，其中构成环的直径允许压接。第一内直径与第二内直径的差别，以及环的表面抛光允许材料与材料之间的密封在相邻环之间形成实质气密密封。
当环121、206接续地安装在一起，一环的第二外半径407以及相邻环的第二内半径406形成一环状沟槽501(图5)。环状沟槽501的宽度通常介于约0.010密尔(mil)～约0.060密尔之间，例如约0.030密尔。环状沟槽501与间隙208为流体连通，而间隙208通过孔洞207与上方歧管113为连通。
图5显示盖组件105的剖面视图的细节。环121、206的形状形成以包括环状间隙122、208，如下将描述。环状间隙122、208与环状沟槽501为流体连通，而环状沟槽501与处理区域106为流体连通。在此实施例中，下方歧管114与盖板115耦接，且盖板115包括额外的水导管505以及一包围环506。盖组件105利用O型圈507而在所示出的位置中在其周围及多个内部部分形成密封。
在一实施例中，环状沟槽501的尾端位于环状喷嘴502。在部分实施例中，环状喷嘴502的几何形状经设计以在处理区域106中形成特定的气体分布模式。此分布模式的剖面实质为三角形或梯形，并产生分隔区503及混合区504，其中来自流体源F1、F2的区别气体G1、G2在未到达混合区504之前不会产生混合。这增进对于在处理区域106中的反应物种的控制，而可消除或减少在除了衬底104以外的表面上的不期望的沉积。喷嘴502的侧壁可以呈约15度～约90度的角度，例如约50度～约70度，如：60度。在一实施例中，喷嘴502的表面可以经过修饰以改变分布模式的流动特性及/或几何形状，并增进流动性质。在一实施方案中，表面可经粗糙化而促进更多的层流(laminar flow)。在另一实施方案中，表面可经平滑化(而非粗糙化)以提供更快、更多的气体紊流(turbulent flow)。举例来说，喷嘴502可包括一经珠击(bead blasted)、冰击或砂击的表面。
在操作中，来自流体源F1的气体通过与入口116耦接的阀107A而进入通道117。来自流体源F1的气体接着通过通道117而进入开口220A，以导引进入上方歧管113。来自流体源F2的气体通过与入口200耦接的阀107B而进入通道202。来自流体源F2的气体接着通过通道202而进入开口220B，以导引进入上方歧管113。且当来自流体源F1及F2的气体到达上方歧管113时，气体仍然在两个分隔流动路径保持分离。来自流体源F1及F2的气体分别通过上方气体通道119、204而进入上方歧管113。孔洞205A、205B与下方歧管114为流体连通，以允许来自流体源F1及F2的气体分别流入形成在下方歧管114中的孔洞123、207(207在此视图中并未示出)。孔洞123、207(图中未示)分别与环状间隙122、208为流体连通，且环状间隙122、208与环状沟槽501为流体连通。来自流体源F1及F2的气体流经环状沟槽501并通过环状喷嘴502而输送至处理区域106。藉此，来自流体源F1及F2的气体在未到达混合区504之前不会进行混合。
本发明所述的实施例使得两种不同气体传送至处理区域时，在尚未正好位于衬底表面上方时，这些气体不会混合。本发明所提供的热控制实施方案亦使得提供至处理区域的各种气体的温度控制变为可能。这提供对于处理室中的工艺(例如沉积、蚀刻工艺等)更佳的控制。举例来说，可控制气体的混合，藉此，则可增进处理区域中的反应。亦可使处理室部件上的不期望的沉积及微粒的产生最小化。因此，藉由减少微粒并使得处理室清洁的停机时间最小化可使产量增加。
本发明虽以较佳实施例说明如上，然其并非用以限定本发明，任何熟知本领域的技术人员，在不脱离本发明的精神和范围内所作的更动与润饰，仍应属本发明的技术范畴。
Claims (20)
1.一种用于一处理室的盖组件，包括：
一上方歧管，具有界定且穿设于其中的流体分离的一第一流动路径及一第二流动路径；以及
一下方歧管，具有一顶侧及一底侧，该顶侧耦接至该上方歧管，该底侧具有流体耦接至该第一流动路径的多个第一出口，以及流体耦接至该第二流动路径的多个第二出口，其中，该下方歧管包括多个同心环，该同心环具有一内表面，且该内表面与一邻接环的一外表面密接，而适以在其之间形成一材料与材料之间的密封。
2.根据权利要求1所述的盖组件，其中该上方歧管具有形成于其中的多个圆形通道，其中该多个圆形通道的一第一部分与形成在该多个同心环之间的各个间隙流体连通。
3.根据权利要求1所述的盖组件，其中该上方歧管具有多个流体通道。
4.根据权利要求1所述的盖组件，其更包括：
一盖板，具有多个形成于其中的开口，用以将两种或更多种气体流体耦接至该多个同心环。
5.根据权利要求4所述的盖组件，其中该盖板铜焊至该上方歧管。
6.根据权利要求1所述的盖组件，其中该多个出口包括环状通道。
7.根据权利要求1所述的盖组件，其中该多个出口具有呈一角度设置的边缘。
8.一种用于一处理室的盖组件，包括：
一上方歧管，具有部分地形成于其中的多个流体分离的通道；以及
一下方歧管，耦接至该上方歧管，其中该多个流体分离的通道的一第一部分包括与该下方歧管为流体连通的一第一气体通道及一第二气体通道，该多个流体分离的通道的一第二部分包括多个热控制通道。
9.根据权利要求8所述的盖组件，其中该上方歧管耦接至一盖板，该盖板具有形成于其中的多个径向通道，且该多个径向通道与该多个流体分离的通道的该第一部分为连通。
10.根据权利要求8所述的盖组件，其中该第一气体通道及该第二气体通道的各个藉由该多个热控制通道其中之一而分隔开。
11.根据权利要求8所述的盖组件，其中该下方歧管更具有多个第一环状沟槽以及多个第二环状沟槽，该多个第一环状沟槽与该第一气体通道为流体连通，该多个第二环状沟槽与该第二气体通道为流体连通，其中该多个第一环状沟槽与该多个第二环状沟槽彼此为流体分离。
12.根据权利要求11所述的盖组件，其中该多个第一环状沟槽与该多个第二环状沟槽的各个包括一喷嘴，该喷嘴呈一角度以导引一气流至邻近该下方歧管的一下表面的一处理区域中。
13.根据权利要求8所述的盖组件，其中该第一气体通道及该第二气体通道的各个具有多个开口，该开口均匀地间隔设置在该通道中，且该开口流体耦接至该下方歧管。
14.根据权利要求8所述的盖组件，其中该第一气体通道及该第二气体通道的各个具有多个开口，该开口以90度间隔设置在该通道中，且该开口流体耦接至该下方歧管。
15.一种用于将一处理流体传送至一处理室的设备，包括：
一歧管组件，具有一顶侧及一底侧，该顶侧具有部分地形成于其上的流体分离的多个圆形通道，该底侧具有形成于其中的多个环状出口；以及
一盖板，具有一顶部、一底部及一边缘，其中该盖板的该底部耦接至该歧管组件的该顶侧，且该盖板具有穿设于其中的至少两个气体通道以及多个热控制流体通道，该至少两个气体通道及该多个热控制流体通道与该多个圆形通道为流体连通。
16.根据权利要求15所述的设备，其中该至少两个气体通道为径向定位。
17.根据权利要求15所述的设备，其中该至少两个气体通道的各个具有多个开口，该开口与流体分离的该多个圆形通道的一第一部分为流体连通。
18.根据权利要求15所述的设备，其中该多个热控制流体通道与流体分离的该多个圆形通道的一第二部分其中之一为流体连通。
19.根据权利要求15所述的设备，其中该盖板具有多个孔洞，该孔洞用以附接气体及热控制流体管路。
20.根据权利要求15所述的设备，其中该多个热控制流体通道的一第一部分形成于该盖板的该顶部中，该多个热控制流体通道的一第二部分形成在该盖板的该边缘中。
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/553,340 US20080099147A1 (en) | 2006-10-26 | 2006-10-26 | Temperature controlled multi-gas distribution assembly |
| US11/553,340 | 2006-10-26 | ||
| PCT/US2007/080966 WO2008051717A1 (en) | 2006-10-26 | 2007-10-10 | Temperature controlled multi-gas distribution assembly |
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| Publication Number | Publication Date |
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| CN101536161A true CN101536161A (zh) | 2009-09-16 |
| CN101536161B CN101536161B (zh) | 2011-04-27 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| CN2007800416212A Active CN101536161B (zh) | 2006-10-26 | 2007-10-10 | 温控多气体分配组件 |
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| Country | Link |
|---|---|
| US (1) | US20080099147A1 (zh) |
| EP (1) | EP2084735B1 (zh) |
| JP (1) | JP2010508660A (zh) |
| KR (1) | KR20090080533A (zh) |
| CN (1) | CN101536161B (zh) |
| TW (1) | TWI391997B (zh) |
| WO (1) | WO2008051717A1 (zh) |
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| CN107366014B (zh) * | 2016-04-19 | 2022-05-27 | 纽富来科技股份有限公司 | 喷头、气相生长装置以及气相生长方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101536161B (zh) | 2011-04-27 |
| KR20090080533A (ko) | 2009-07-24 |
| US20080099147A1 (en) | 2008-05-01 |
| EP2084735A4 (en) | 2012-10-31 |
| TW200828419A (en) | 2008-07-01 |
| EP2084735B1 (en) | 2014-06-18 |
| WO2008051717A1 (en) | 2008-05-02 |
| TWI391997B (zh) | 2013-04-01 |
| JP2010508660A (ja) | 2010-03-18 |
| EP2084735A1 (en) | 2009-08-05 |
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