CN101573761A - 具有可变读取阈值的非易失性存储器 - Google Patents
具有可变读取阈值的非易失性存储器 Download PDFInfo
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- CN101573761A CN101573761A CNA2007800410324A CN200780041032A CN101573761A CN 101573761 A CN101573761 A CN 101573761A CN A2007800410324 A CNA2007800410324 A CN A2007800410324A CN 200780041032 A CN200780041032 A CN 200780041032A CN 101573761 A CN101573761 A CN 101573761A
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- Prior art keywords
- voltage
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- flash memory
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- threshold
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5642—Sensing or reading circuits; Data output circuits
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
- G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
- G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
- G06F11/1072—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices in multilevel memories
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
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- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Quality & Reliability (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Read Only Memory (AREA)
Abstract
Description
Claims (47)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/556,615 US7904788B2 (en) | 2006-11-03 | 2006-11-03 | Methods of varying read threshold voltage in nonvolatile memory |
US11/556,626 US7558109B2 (en) | 2006-11-03 | 2006-11-03 | Nonvolatile memory with variable read threshold |
US11/556,615 | 2006-11-03 | ||
US11/556,626 | 2006-11-03 | ||
PCT/US2007/082831 WO2008057822A2 (en) | 2006-11-03 | 2007-10-29 | Nonvolatile memory with variable read threshold |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101573761A true CN101573761A (zh) | 2009-11-04 |
CN101573761B CN101573761B (zh) | 2013-04-24 |
Family
ID=39463513
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200780041032.4A Active CN101573761B (zh) | 2006-11-03 | 2007-10-29 | 具有可变读取阈值的非易失性存储器 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7904788B2 (zh) |
CN (1) | CN101573761B (zh) |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102479556A (zh) * | 2010-11-25 | 2012-05-30 | 三星电子株式会社 | 非易失性存储器件及其读取方法 |
CN103337257A (zh) * | 2013-06-20 | 2013-10-02 | 深圳市瑞耐斯技术有限公司 | 一种nand闪存设备及其操作方法 |
CN103810055A (zh) * | 2012-11-12 | 2014-05-21 | 飞思卡尔半导体公司 | 编程具有错误校正码(ecc)的非易失性存储器(nvm)系统 |
CN103928055A (zh) * | 2013-01-14 | 2014-07-16 | 三星电子株式会社 | 闪速存储器、闪速存储器系统及其操作方法 |
CN103988263A (zh) * | 2011-12-15 | 2014-08-13 | 美光科技公司 | 用以减少相变存储器的读取错误的读取偏置管理 |
CN105164754A (zh) * | 2013-04-03 | 2015-12-16 | 西部数据技术公司 | 写入预补偿以延长固态存储器寿命的系统和方法 |
CN105679368A (zh) * | 2016-01-15 | 2016-06-15 | 上海华虹宏力半导体制造有限公司 | 一种通过调整SONOS字线读电压增加flash窗口的方法 |
CN106293539A (zh) * | 2016-08-18 | 2017-01-04 | 华为技术有限公司 | 一种闪存设备的访问方法、装置和系统 |
CN107257958A (zh) * | 2015-02-27 | 2017-10-17 | 微软技术许可有限责任公司 | 用于定制应用的动态近似存储 |
CN108140408A (zh) * | 2015-10-19 | 2018-06-08 | 硅存储技术公司 | 用于闪存存储器的动力驱动优化 |
CN109671465A (zh) * | 2017-08-29 | 2019-04-23 | 爱思开海力士有限公司 | 具有自适应读取阈值方案的存储器系统及其操作方法 |
CN111538617A (zh) * | 2018-12-27 | 2020-08-14 | 美光科技公司 | 用于存储器装置的系统和方法 |
CN112166472A (zh) * | 2018-06-20 | 2021-01-01 | 美光科技公司 | 具有使用基于组件的功能进行的动态校准的存储器子系统 |
Families Citing this family (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080092015A1 (en) * | 2006-09-28 | 2008-04-17 | Yigal Brandman | Nonvolatile memory with adaptive operation |
US7904783B2 (en) * | 2006-09-28 | 2011-03-08 | Sandisk Corporation | Soft-input soft-output decoder for nonvolatile memory |
US7805663B2 (en) * | 2006-09-28 | 2010-09-28 | Sandisk Corporation | Methods of adapting operation of nonvolatile memory |
US7818653B2 (en) * | 2006-09-28 | 2010-10-19 | Sandisk Corporation | Methods of soft-input soft-output decoding for nonvolatile memory |
US7904780B2 (en) | 2006-11-03 | 2011-03-08 | Sandisk Corporation | Methods of modulating error correction coding |
US8001441B2 (en) * | 2006-11-03 | 2011-08-16 | Sandisk Technologies Inc. | Nonvolatile memory with modulated error correction coding |
US7558109B2 (en) * | 2006-11-03 | 2009-07-07 | Sandisk Corporation | Nonvolatile memory with variable read threshold |
KR100842680B1 (ko) * | 2007-01-08 | 2008-07-01 | 삼성전자주식회사 | 플래시 메모리 장치의 오류 정정 컨트롤러 및 그것을포함하는 메모리 시스템 |
KR100888842B1 (ko) * | 2007-06-28 | 2009-03-17 | 삼성전자주식회사 | 읽기 전압을 최적화할 수 있는 플래시 메모리 장치 및그것의 독출 전압 설정 방법 |
US8060798B2 (en) * | 2007-07-19 | 2011-11-15 | Micron Technology, Inc. | Refresh of non-volatile memory cells based on fatigue conditions |
US8117375B2 (en) | 2007-10-17 | 2012-02-14 | Micron Technology, Inc. | Memory device program window adjustment |
US8677221B2 (en) * | 2008-01-02 | 2014-03-18 | Apple Inc. | Partial voltage read of memory |
KR101506655B1 (ko) * | 2008-05-15 | 2015-03-30 | 삼성전자주식회사 | 메모리 장치 및 메모리 데이터 오류 관리 방법 |
US8458536B2 (en) * | 2008-07-17 | 2013-06-04 | Marvell World Trade Ltd. | Data recovery in solid state memory devices |
US8291297B2 (en) * | 2008-12-18 | 2012-10-16 | Intel Corporation | Data error recovery in non-volatile memory |
US8276042B2 (en) | 2009-02-03 | 2012-09-25 | Micron Technology, Inc. | Determining sector status in a memory device |
US8458114B2 (en) * | 2009-03-02 | 2013-06-04 | Analog Devices, Inc. | Analog computation using numerical representations with uncertainty |
US8107306B2 (en) | 2009-03-27 | 2012-01-31 | Analog Devices, Inc. | Storage devices with soft processing |
US8386884B2 (en) * | 2009-07-14 | 2013-02-26 | Macronix International Co., Ltd. | Memory apparatus with multi-level cells and operation method thereof |
US8799747B2 (en) * | 2010-06-03 | 2014-08-05 | Seagate Technology Llc | Data hardening to compensate for loss of data retention characteristics in a non-volatile memory |
US8508995B2 (en) * | 2010-09-15 | 2013-08-13 | Densbits Technologies Ltd. | System and method for adjusting read voltage thresholds in memories |
US8464137B2 (en) | 2010-12-03 | 2013-06-11 | International Business Machines Corporation | Probabilistic multi-tier error correction in not-and (NAND) flash memory |
US8358542B2 (en) | 2011-01-14 | 2013-01-22 | Micron Technology, Inc. | Methods, devices, and systems for adjusting sensing voltages in devices |
US8631288B2 (en) | 2011-03-14 | 2014-01-14 | Micron Technology, Inc. | Methods, devices, and systems for data sensing in a memory system |
KR101835605B1 (ko) * | 2011-11-24 | 2018-03-08 | 삼성전자 주식회사 | 플래시 메모리 시스템 및 플래시 메모리 시스템의 리드 방법 |
US20130185612A1 (en) * | 2012-01-18 | 2013-07-18 | Samsung Electronics Co., Ltd. | Flash memory system and read method of flash memory system |
US9257203B2 (en) * | 2012-12-06 | 2016-02-09 | Micron Technology, Inc. | Setting a default read signal based on error correction |
US9146850B2 (en) * | 2013-08-01 | 2015-09-29 | SMART Storage Systems, Inc. | Data storage system with dynamic read threshold mechanism and method of operation thereof |
US10319460B2 (en) * | 2013-08-14 | 2019-06-11 | Infineon Technologies Ag | Systems and methods utilizing a flexible read reference for a dynamic read window |
GB201322075D0 (en) | 2013-12-13 | 2014-01-29 | Ibm | Device for selecting a level for at least one read voltage |
US9389956B2 (en) | 2014-01-10 | 2016-07-12 | International Business Machines Corporation | Implementing ECC control for enhanced endurance and data retention of flash memories |
KR20160005264A (ko) | 2014-07-04 | 2016-01-14 | 삼성전자주식회사 | 저장 장치 및 그것의 읽기 방법들 |
US9594615B2 (en) * | 2014-09-30 | 2017-03-14 | Apple Inc. | Estimating flash quality using selective error emphasis |
US10365859B2 (en) | 2014-10-21 | 2019-07-30 | International Business Machines Corporation | Storage array management employing a merged background management process |
US9563373B2 (en) | 2014-10-21 | 2017-02-07 | International Business Machines Corporation | Detecting error count deviations for non-volatile memory blocks for advanced non-volatile memory block management |
US9990279B2 (en) | 2014-12-23 | 2018-06-05 | International Business Machines Corporation | Page-level health equalization |
US10339048B2 (en) | 2014-12-23 | 2019-07-02 | International Business Machines Corporation | Endurance enhancement scheme using memory re-evaluation |
TWI575532B (zh) * | 2016-03-02 | 2017-03-21 | 群聯電子股份有限公司 | 解碼方法、記憶體控制電路單元及記憶體儲存裝置 |
KR20180100984A (ko) * | 2017-03-03 | 2018-09-12 | 에스케이하이닉스 주식회사 | 메모리 시스템 및 메모리 시스템의 동작 방법 |
US10678633B2 (en) * | 2017-11-30 | 2020-06-09 | SK Hynix Inc. | Memory system and operating method thereof |
JP2019164850A (ja) * | 2018-03-19 | 2019-09-26 | 東芝メモリ株式会社 | メモリシステム |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002158590A (ja) * | 2000-11-17 | 2002-05-31 | Sony Corp | 復号装置及び方法、並びにデータ受信装置及び方法 |
US20040080979A1 (en) * | 2002-10-25 | 2004-04-29 | Nexflash Technologies, Inc. | Nonvolatile semiconductor memory having three-level memory cells and program and read mapping circuits therefor |
CN1713372A (zh) * | 2004-06-23 | 2005-12-28 | 旺宏电子股份有限公司 | 识别程序化及抹除存储单元中的逻辑信息的方法 |
Family Cites Families (59)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5043940A (en) * | 1988-06-08 | 1991-08-27 | Eliyahou Harari | Flash EEPROM memory systems having multistate storage cells |
US5095344A (en) * | 1988-06-08 | 1992-03-10 | Eliyahou Harari | Highly compact eprom and flash eeprom devices |
US5070032A (en) * | 1989-03-15 | 1991-12-03 | Sundisk Corporation | Method of making dense flash eeprom semiconductor memory structures |
US5172338B1 (en) * | 1989-04-13 | 1997-07-08 | Sandisk Corp | Multi-state eeprom read and write circuits and techniques |
US5343063A (en) * | 1990-12-18 | 1994-08-30 | Sundisk Corporation | Dense vertical programmable read only memory cell structure and processes for making them |
US5313421A (en) * | 1992-01-14 | 1994-05-17 | Sundisk Corporation | EEPROM with split gate source side injection |
US6222762B1 (en) * | 1992-01-14 | 2001-04-24 | Sandisk Corporation | Multi-state memory |
US5657332A (en) * | 1992-05-20 | 1997-08-12 | Sandisk Corporation | Soft errors handling in EEPROM devices |
US5532962A (en) * | 1992-05-20 | 1996-07-02 | Sandisk Corporation | Soft errors handling in EEPROM devices |
US5315541A (en) * | 1992-07-24 | 1994-05-24 | Sundisk Corporation | Segmented column memory array |
US5555204A (en) * | 1993-06-29 | 1996-09-10 | Kabushiki Kaisha Toshiba | Non-volatile semiconductor memory device |
KR0169267B1 (ko) * | 1993-09-21 | 1999-02-01 | 사토 후미오 | 불휘발성 반도체 기억장치 |
US5661053A (en) * | 1994-05-25 | 1997-08-26 | Sandisk Corporation | Method of making dense flash EEPROM cell array and peripheral supporting circuits formed in deposited field oxide with the use of spacers |
US5903495A (en) * | 1996-03-18 | 1999-05-11 | Kabushiki Kaisha Toshiba | Semiconductor device and memory system |
JP3200012B2 (ja) | 1996-04-19 | 2001-08-20 | 株式会社東芝 | 記憶システム |
US5930167A (en) * | 1997-07-30 | 1999-07-27 | Sandisk Corporation | Multi-state non-volatile flash memory capable of being its own two state write cache |
US5909449A (en) * | 1997-09-08 | 1999-06-01 | Invox Technology | Multibit-per-cell non-volatile memory with error detection and correction |
US6467062B1 (en) * | 1997-12-10 | 2002-10-15 | Mordecai Barkan | Digital data (multi-bit) storage with discrete analog memory cells |
US6397364B1 (en) * | 1998-04-20 | 2002-05-28 | Mordecai Barkan | Digital data representation for multi-bit data storage and transmission |
JP4132323B2 (ja) * | 1998-12-17 | 2008-08-13 | 富士通株式会社 | 不揮発性半導体記憶装置及び不揮発性半導体記憶装置の内部動作方法 |
JP3937214B2 (ja) * | 1999-09-17 | 2007-06-27 | 株式会社ルネサステクノロジ | エラー訂正回数を記録する記憶装置 |
US6538922B1 (en) * | 2000-09-27 | 2003-03-25 | Sandisk Corporation | Writable tracking cells |
US6717851B2 (en) * | 2000-10-31 | 2004-04-06 | Sandisk Corporation | Method of reducing disturbs in non-volatile memory |
EP1211812B1 (en) * | 2000-10-31 | 2006-11-15 | STMicroelectronics S.r.l. | A/D conversion method in high density multilevel non-volatile memory devices and corresponding converter device |
US6469931B1 (en) * | 2001-01-04 | 2002-10-22 | M-Systems Flash Disk Pioneers Ltd. | Method for increasing information content in a computer memory |
US6522580B2 (en) * | 2001-06-27 | 2003-02-18 | Sandisk Corporation | Operating techniques for reducing effects of coupling between storage elements of a non-volatile memory operated in multiple data states |
US6456528B1 (en) * | 2001-09-17 | 2002-09-24 | Sandisk Corporation | Selective operation of a multi-state non-volatile memory system in a binary mode |
US6925007B2 (en) * | 2001-10-31 | 2005-08-02 | Sandisk Corporation | Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements |
US6621739B2 (en) * | 2002-01-18 | 2003-09-16 | Sandisk Corporation | Reducing the effects of noise in non-volatile memories through multiple reads |
US6751766B2 (en) * | 2002-05-20 | 2004-06-15 | Sandisk Corporation | Increasing the effectiveness of error correction codes and operating multi-level memory systems by using information about the quality of the stored data |
US6941412B2 (en) * | 2002-08-29 | 2005-09-06 | Sandisk Corporation | Symbol frequency leveling in a storage system |
US6983428B2 (en) * | 2002-09-24 | 2006-01-03 | Sandisk Corporation | Highly compact non-volatile memory and method thereof |
US7023735B2 (en) * | 2003-06-17 | 2006-04-04 | Ramot At Tel-Aviv University Ltd. | Methods of increasing the reliability of a flash memory |
US7012835B2 (en) * | 2003-10-03 | 2006-03-14 | Sandisk Corporation | Flash memory data correction and scrub techniques |
US6888758B1 (en) * | 2004-01-21 | 2005-05-03 | Sandisk Corporation | Programming non-volatile memory |
JP4041076B2 (ja) * | 2004-02-27 | 2008-01-30 | 株式会社東芝 | データ記憶システム |
US20050213393A1 (en) * | 2004-03-14 | 2005-09-29 | M-Systems Flash Disk Pioneers, Ltd. | States encoding in multi-bit flash cells for optimizing error rate |
US7020026B2 (en) * | 2004-05-05 | 2006-03-28 | Sandisk Corporation | Bitline governed approach for program control of non-volatile memory |
US7493457B2 (en) * | 2004-11-08 | 2009-02-17 | Sandisk Il. Ltd | States encoding in multi-bit flash cells for optimizing error rate |
US7092290B2 (en) * | 2004-11-16 | 2006-08-15 | Sandisk Corporation | High speed programming system with reduced over programming |
JP2007102865A (ja) * | 2005-09-30 | 2007-04-19 | Toshiba Corp | 半導体集積回路装置 |
US7681109B2 (en) * | 2005-10-13 | 2010-03-16 | Ramot At Tel Aviv University Ltd. | Method of error correction in MBC flash memory |
US7526715B2 (en) * | 2005-10-17 | 2009-04-28 | Ramot At Tel Aviv University Ltd. | Probabilistic error correction in multi-bit-per-cell flash memory |
US7844877B2 (en) * | 2005-11-15 | 2010-11-30 | Ramot At Tel Aviv University Ltd. | Method and device for multi phase error-correction |
US7546515B2 (en) * | 2005-12-27 | 2009-06-09 | Sandisk Corporation | Method of storing downloadable firmware on bulk media |
US7536627B2 (en) * | 2005-12-27 | 2009-05-19 | Sandisk Corporation | Storing downloadable firmware on bulk media |
US7388781B2 (en) * | 2006-03-06 | 2008-06-17 | Sandisk Il Ltd. | Multi-bit-per-cell flash memory device with non-bijective mapping |
US7840875B2 (en) * | 2006-05-15 | 2010-11-23 | Sandisk Corporation | Convolutional coding methods for nonvolatile memory |
US20070266296A1 (en) * | 2006-05-15 | 2007-11-15 | Conley Kevin M | Nonvolatile Memory with Convolutional Coding |
US8042029B2 (en) * | 2006-05-21 | 2011-10-18 | Ramot At Tel Aviv University Ltd. | Error correction decoding by trial and error |
US7533328B2 (en) * | 2006-07-04 | 2009-05-12 | Sandisk Il, Ltd. | Method of error correction in a multi-bit-per-cell flash memory |
US7805663B2 (en) * | 2006-09-28 | 2010-09-28 | Sandisk Corporation | Methods of adapting operation of nonvolatile memory |
US7904783B2 (en) * | 2006-09-28 | 2011-03-08 | Sandisk Corporation | Soft-input soft-output decoder for nonvolatile memory |
US7818653B2 (en) * | 2006-09-28 | 2010-10-19 | Sandisk Corporation | Methods of soft-input soft-output decoding for nonvolatile memory |
US20080092015A1 (en) * | 2006-09-28 | 2008-04-17 | Yigal Brandman | Nonvolatile memory with adaptive operation |
EP2084709B1 (en) | 2006-11-03 | 2014-04-02 | SanDisk Technologies Inc. | Nonvolatile memory with variable read threshold |
US8001441B2 (en) * | 2006-11-03 | 2011-08-16 | Sandisk Technologies Inc. | Nonvolatile memory with modulated error correction coding |
US7558109B2 (en) * | 2006-11-03 | 2009-07-07 | Sandisk Corporation | Nonvolatile memory with variable read threshold |
US7904780B2 (en) * | 2006-11-03 | 2011-03-08 | Sandisk Corporation | Methods of modulating error correction coding |
-
2006
- 2006-11-03 US US11/556,615 patent/US7904788B2/en active Active
-
2007
- 2007-10-29 CN CN200780041032.4A patent/CN101573761B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002158590A (ja) * | 2000-11-17 | 2002-05-31 | Sony Corp | 復号装置及び方法、並びにデータ受信装置及び方法 |
US20040080979A1 (en) * | 2002-10-25 | 2004-04-29 | Nexflash Technologies, Inc. | Nonvolatile semiconductor memory having three-level memory cells and program and read mapping circuits therefor |
CN1713372A (zh) * | 2004-06-23 | 2005-12-28 | 旺宏电子股份有限公司 | 识别程序化及抹除存储单元中的逻辑信息的方法 |
Cited By (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102479556A (zh) * | 2010-11-25 | 2012-05-30 | 三星电子株式会社 | 非易失性存储器件及其读取方法 |
CN102479556B (zh) * | 2010-11-25 | 2017-04-05 | 三星电子株式会社 | 非易失性存储器件及其读取方法 |
CN103988263B (zh) * | 2011-12-15 | 2017-03-08 | 美光科技公司 | 用以减少相变存储器的读取错误的读取偏置管理 |
CN103988263A (zh) * | 2011-12-15 | 2014-08-13 | 美光科技公司 | 用以减少相变存储器的读取错误的读取偏置管理 |
CN103810055A (zh) * | 2012-11-12 | 2014-05-21 | 飞思卡尔半导体公司 | 编程具有错误校正码(ecc)的非易失性存储器(nvm)系统 |
CN103810055B (zh) * | 2012-11-12 | 2018-06-26 | 恩智浦美国有限公司 | 编程具有错误校正码(ecc)的非易失性存储器(nvm)系统 |
CN103928055B (zh) * | 2013-01-14 | 2019-08-20 | 三星电子株式会社 | 闪速存储器、闪速存储器系统及其操作方法 |
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