CN101584006A - 非易失性存储器中的经分割的软编程 - Google Patents
非易失性存储器中的经分割的软编程 Download PDFInfo
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- CN101584006A CN101584006A CNA2007800382678A CN200780038267A CN101584006A CN 101584006 A CN101584006 A CN 101584006A CN A2007800382678 A CNA2007800382678 A CN A2007800382678A CN 200780038267 A CN200780038267 A CN 200780038267A CN 101584006 A CN101584006 A CN 101584006A
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
- G11C16/3477—Circuits or methods to prevent overerasing of nonvolatile memory cells, e.g. by detecting onset or cessation of current flow in cells and using the detector output to terminate erasing
Abstract
Description
Claims (18)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/549,553 US7499338B2 (en) | 2006-10-13 | 2006-10-13 | Partitioned soft programming in non-volatile memory |
US11/549,564 US7535766B2 (en) | 2006-10-13 | 2006-10-13 | Systems for partitioned soft programming in non-volatile memory |
US11/549,553 | 2006-10-13 | ||
US11/549,564 | 2006-10-13 | ||
PCT/US2007/080740 WO2008048810A2 (en) | 2006-10-13 | 2007-10-08 | Partitioned soft programming in non-volatile memory |
Publications (2)
Publication Number | Publication Date |
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CN101584006A true CN101584006A (zh) | 2009-11-18 |
CN101584006B CN101584006B (zh) | 2013-03-13 |
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Application Number | Title | Priority Date | Filing Date |
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CN200780038267.8A Expired - Fee Related CN101584006B (zh) | 2006-10-13 | 2007-10-08 | 非易失性存储器中的经分割的软编程 |
Country Status (2)
Country | Link |
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US (1) | US7499338B2 (zh) |
CN (1) | CN101584006B (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102270501A (zh) * | 2010-06-01 | 2011-12-07 | 三星电子株式会社 | 利用编程定序器的闪存器件和系统,以及编程方法 |
CN102543195A (zh) * | 2010-12-29 | 2012-07-04 | 北京兆易创新科技有限公司 | 一种非易失存储器的擦除方法和装置 |
CN104934064A (zh) * | 2015-07-07 | 2015-09-23 | 合肥恒烁半导体有限公司 | 一种nand型闪存存储器的块擦除方法 |
CN105976867A (zh) * | 2016-07-06 | 2016-09-28 | 北京兆易创新科技股份有限公司 | 一种存储单元的擦除方法 |
CN106796548A (zh) * | 2014-09-06 | 2017-05-31 | Neo半导体公司 | 使用多页编程来写入非易失性存储器的方法与装置 |
CN110808077A (zh) * | 2018-08-06 | 2020-02-18 | 三星电子株式会社 | 非易失性存储器装置及操作其的方法 |
Families Citing this family (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7450433B2 (en) * | 2004-12-29 | 2008-11-11 | Sandisk Corporation | Word line compensation in non-volatile memory erase operations |
US7495954B2 (en) | 2006-10-13 | 2009-02-24 | Sandisk Corporation | Method for partitioned erase and erase verification to compensate for capacitive coupling effects in non-volatile memory |
US7697338B2 (en) * | 2006-11-16 | 2010-04-13 | Sandisk Corporation | Systems for controlled boosting in non-volatile memory soft programming |
US20080140724A1 (en) | 2006-12-06 | 2008-06-12 | David Flynn | Apparatus, system, and method for servicing object requests within a storage controller |
US7894263B2 (en) * | 2007-09-28 | 2011-02-22 | Sandisk Corporation | High voltage generation and control in source-side injection programming of non-volatile memory |
KR100932367B1 (ko) * | 2007-11-09 | 2009-12-18 | 주식회사 하이닉스반도체 | 불휘발성 메모리 장치의 소프트 프로그램 방법 |
US7836226B2 (en) | 2007-12-06 | 2010-11-16 | Fusion-Io, Inc. | Apparatus, system, and method for coordinating storage requests in a multi-processor/multi-thread environment |
US7813169B2 (en) * | 2008-01-18 | 2010-10-12 | Qimonda Flash Gmbh | Integrated circuit and method to operate an integrated circuit |
KR100953055B1 (ko) * | 2008-05-20 | 2010-04-15 | 주식회사 하이닉스반도체 | 불휘발성 메모리 소자의 동작 방법 |
US9021158B2 (en) | 2009-09-09 | 2015-04-28 | SanDisk Technologies, Inc. | Program suspend/resume for memory |
EP2476039B1 (en) | 2009-09-09 | 2016-10-26 | SanDisk Technologies LLC | Apparatus, system, and method for power reduction management in a storage device |
US9223514B2 (en) | 2009-09-09 | 2015-12-29 | SanDisk Technologies, Inc. | Erase suspend/resume for memory |
US8972627B2 (en) | 2009-09-09 | 2015-03-03 | Fusion-Io, Inc. | Apparatus, system, and method for managing operations for data storage media |
US8116140B2 (en) * | 2010-04-09 | 2012-02-14 | Sandisk Technologies Inc. | Saw-shaped multi-pulse programming for program noise reduction in memory |
US8984216B2 (en) | 2010-09-09 | 2015-03-17 | Fusion-Io, Llc | Apparatus, system, and method for managing lifetime of a storage device |
KR101155249B1 (ko) * | 2010-11-10 | 2012-06-13 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치 및 그 소거 방법 |
US10817502B2 (en) | 2010-12-13 | 2020-10-27 | Sandisk Technologies Llc | Persistent memory management |
US10817421B2 (en) | 2010-12-13 | 2020-10-27 | Sandisk Technologies Llc | Persistent data structures |
US9218278B2 (en) | 2010-12-13 | 2015-12-22 | SanDisk Technologies, Inc. | Auto-commit memory |
US9208071B2 (en) | 2010-12-13 | 2015-12-08 | SanDisk Technologies, Inc. | Apparatus, system, and method for accessing memory |
US8385132B2 (en) | 2010-12-22 | 2013-02-26 | Sandisk Technologies Inc. | Alternate bit line bias during programming to reduce channel to floating gate coupling in memory |
KR20120133594A (ko) * | 2011-05-31 | 2012-12-11 | 에스케이하이닉스 주식회사 | 비휘발성 메모리 장치의 동작방법 |
KR101821604B1 (ko) * | 2011-07-25 | 2018-01-24 | 삼성전자주식회사 | 비휘발성 메모리 장치의 프로그램 방법 |
WO2013101043A1 (en) * | 2011-12-29 | 2013-07-04 | Intel Corporation | Dynamic window to improve nand memory endurance |
KR101893562B1 (ko) | 2012-01-09 | 2018-10-04 | 삼성전자주식회사 | 불휘발성 메모리 장치 및 그것의 프로그램 방법 |
US9019775B2 (en) | 2012-04-18 | 2015-04-28 | Sandisk Technologies Inc. | Erase operation for 3D non-volatile memory with controllable gate-induced drain leakage current |
US8787094B2 (en) * | 2012-04-18 | 2014-07-22 | Sandisk Technologies Inc. | Soft erase operation for 3D non-volatile memory with selective inhibiting of passed bits |
US9183940B2 (en) | 2013-05-21 | 2015-11-10 | Aplus Flash Technology, Inc. | Low disturbance, power-consumption, and latency in NAND read and program-verify operations |
US9263137B2 (en) | 2013-06-27 | 2016-02-16 | Aplus Flash Technology, Inc. | NAND array architecture for multiple simutaneous program and read |
WO2015013689A2 (en) | 2013-07-25 | 2015-01-29 | Aplus Flash Technology, Inc. | Nand array hiarchical bl structures for multiple-wl and all -bl simultaneous erase, erase-verify, program, program-verify, and read operations |
US9293205B2 (en) | 2013-09-14 | 2016-03-22 | Aplus Flash Technology, Inc | Multi-task concurrent/pipeline NAND operations on all planes |
US8995198B1 (en) | 2013-10-10 | 2015-03-31 | Spansion Llc | Multi-pass soft programming |
US9613704B2 (en) | 2013-12-25 | 2017-04-04 | Aplus Flash Technology, Inc | 2D/3D NAND memory array with bit-line hierarchical structure for multi-page concurrent SLC/MLC program and program-verify |
US9666244B2 (en) | 2014-03-01 | 2017-05-30 | Fusion-Io, Inc. | Dividing a storage procedure |
JP2015176628A (ja) * | 2014-03-17 | 2015-10-05 | 株式会社東芝 | 半導体記憶装置及びメモリコントローラ |
US9659636B2 (en) | 2014-07-22 | 2017-05-23 | Peter Wung Lee | NAND memory array with BL-hierarchical structure for concurrent all-BL, all-threshold-state program, and alternative-WL program, odd/even read and verify operations |
KR102222594B1 (ko) * | 2014-11-13 | 2021-03-08 | 삼성전자주식회사 | 비휘발성 메모리 장치, 그것의 소거 방법, 및 그것을 포함하는 메모리 시스템 |
US9933950B2 (en) | 2015-01-16 | 2018-04-03 | Sandisk Technologies Llc | Storage operation interrupt |
US9543023B2 (en) * | 2015-01-23 | 2017-01-10 | Sandisk Technologies Llc | Partial block erase for block programming in non-volatile memory |
US10074440B2 (en) | 2016-10-28 | 2018-09-11 | Sandisk Technologies Llc | Erase for partially programmed blocks in non-volatile memory |
CN110838332A (zh) * | 2018-08-17 | 2020-02-25 | 北京兆易创新科技股份有限公司 | 一种存储数据的擦除方法及装置 |
KR102569820B1 (ko) * | 2018-10-25 | 2023-08-24 | 에스케이하이닉스 주식회사 | 메모리 컨트롤러 및 그 동작 방법 |
US11656673B2 (en) * | 2019-12-30 | 2023-05-23 | Micron Technology, Inc. | Managing reduced power memory operations |
TWI712041B (zh) * | 2020-03-25 | 2020-12-01 | 旺宏電子股份有限公司 | 多層次三維記憶體之抹除方法 |
Family Cites Families (61)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4489400A (en) * | 1982-03-01 | 1984-12-18 | Texas Instruments Incorporated | Serially banked read only memory |
DE3468592D1 (en) * | 1984-05-07 | 1988-02-11 | Itt Ind Gmbh Deutsche | Semiconductor memory cell having an electrically floating memory gate |
JP3099887B2 (ja) * | 1990-04-12 | 2000-10-16 | 株式会社東芝 | 不揮発性半導体記憶装置 |
US5428568A (en) * | 1991-10-30 | 1995-06-27 | Mitsubishi Denki Kabushiki Kaisha | Electrically erasable and programmable non-volatile memory device and a method of operating the same |
US7071060B1 (en) * | 1996-02-28 | 2006-07-04 | Sandisk Corporation | EEPROM with split gate source side infection with sidewall spacers |
US5452251A (en) * | 1992-12-03 | 1995-09-19 | Fujitsu Limited | Semiconductor memory device for selecting and deselecting blocks of word lines |
US5491809A (en) * | 1993-01-05 | 1996-02-13 | Texas Instruments Incorporated | Smart erase algorithm with secure scheme for flash EPROMs |
KR0169267B1 (ko) * | 1993-09-21 | 1999-02-01 | 사토 후미오 | 불휘발성 반도체 기억장치 |
KR970005644B1 (ko) * | 1994-09-03 | 1997-04-18 | 삼성전자 주식회사 | 불휘발성 반도체 메모리장치의 멀티블럭 소거 및 검증장치 및 그 방법 |
US5808338A (en) * | 1994-11-11 | 1998-09-15 | Nkk Corporation | Nonvolatile semiconductor memory |
US5625600A (en) * | 1995-05-05 | 1997-04-29 | United Microelectronics Corporation | Flash memory array with self-limiting erase |
US5978270A (en) * | 1995-08-31 | 1999-11-02 | Hitachi, Ltd. | Semiconductor non-volatile memory device and computer system using the same |
KR0172408B1 (ko) * | 1995-12-11 | 1999-03-30 | 김광호 | 다수상태 불휘발성 반도체 메모리 및 그의 구동방법 |
JP3481817B2 (ja) * | 1997-04-07 | 2003-12-22 | 株式会社東芝 | 半導体記憶装置 |
US5963477A (en) * | 1997-12-09 | 1999-10-05 | Macronix International Co., Ltd. | Flash EPROM erase algorithm with wordline level retry |
US6587903B2 (en) * | 1998-02-27 | 2003-07-01 | Micron Technology, Inc. | Soft programming for recovery of overerasure |
JP3905979B2 (ja) * | 1998-06-03 | 2007-04-18 | 株式会社東芝 | 不揮発性半導体メモリ |
US5995417A (en) * | 1998-10-20 | 1999-11-30 | Advanced Micro Devices, Inc. | Scheme for page erase and erase verify in a non-volatile memory array |
US6041001A (en) * | 1999-02-25 | 2000-03-21 | Lexar Media, Inc. | Method of increasing data reliability of a flash memory device without compromising compatibility |
TW439293B (en) * | 1999-03-18 | 2001-06-07 | Toshiba Corp | Nonvolatile semiconductor memory |
JP3892612B2 (ja) * | 1999-04-09 | 2007-03-14 | 株式会社東芝 | 半導体装置 |
US6198662B1 (en) * | 1999-06-24 | 2001-03-06 | Amic Technology, Inc. | Circuit and method for pre-erasing/erasing flash memory array |
US6166962A (en) * | 1999-06-24 | 2000-12-26 | Amic Technology, Inc. | Circuit and method for conditioning flash memory array |
US6122198A (en) * | 1999-08-13 | 2000-09-19 | Advanced Micro Devices, Inc. | Bit by bit APDE verify for flash memory applications |
US6438030B1 (en) * | 2000-08-15 | 2002-08-20 | Motorola, Inc. | Non-volatile memory, method of manufacture, and method of programming |
US6452840B1 (en) * | 2000-10-21 | 2002-09-17 | Advanced Micro Devices, Inc. | Feedback method to optimize electric field during channel erase of flash memory devices |
KR100381954B1 (ko) * | 2000-10-26 | 2003-04-26 | 삼성전자주식회사 | 메모리 셀의 과소거를 방지할 수 있는 소거 방법 및그것을 이용한 플래시 메모리 장치 |
KR100407572B1 (ko) * | 2001-01-10 | 2003-12-01 | 삼성전자주식회사 | 낸드형 플래쉬 메모리 장치에서의 셀 드레쉬홀드 전압의분포를 개선하는 방법 |
JP3631463B2 (ja) * | 2001-12-27 | 2005-03-23 | 株式会社東芝 | 不揮発性半導体記憶装置 |
DE60140039D1 (de) * | 2001-02-05 | 2009-11-12 | St Microelectronics Srl | Löschverfahren für einen Flash-Speicher |
US6620682B1 (en) * | 2001-02-27 | 2003-09-16 | Aplus Flash Technology, Inc. | Set of three level concurrent word line bias conditions for a nor type flash memory array |
US6381174B1 (en) * | 2001-03-12 | 2002-04-30 | Micron Technology, Inc. | Non-volatile memory device with redundant columns |
JP2002319286A (ja) * | 2001-04-19 | 2002-10-31 | Hitachi Ltd | 不揮発性記憶装置および記憶システム |
US6522585B2 (en) * | 2001-05-25 | 2003-02-18 | Sandisk Corporation | Dual-cell soft programming for virtual-ground memory arrays |
US6421276B1 (en) * | 2001-08-09 | 2002-07-16 | Tower Semiconductor Ltd. | Method and apparatus for controlling erase operations of a non-volatile memory system |
JP3974778B2 (ja) * | 2001-12-26 | 2007-09-12 | シャープ株式会社 | 不揮発性半導体メモリ装置およびそのデータ消去方法 |
US6661711B2 (en) * | 2002-02-06 | 2003-12-09 | Sandisk Corporation | Implementation of an inhibit during soft programming to tighten an erase voltage distribution |
JP2003242787A (ja) * | 2002-02-14 | 2003-08-29 | Mitsubishi Electric Corp | 不揮発性半導体記憶装置 |
US7002848B2 (en) * | 2002-02-28 | 2006-02-21 | Renesas Technology Corp. | Nonvolatile semiconductor memory device |
KR100476889B1 (ko) * | 2002-04-04 | 2005-03-17 | 삼성전자주식회사 | 플래쉬메모리의 워드라인디코더 |
JP4170682B2 (ja) * | 2002-06-18 | 2008-10-22 | 株式会社東芝 | 不揮発性半導体メモリ装置 |
US6894931B2 (en) * | 2002-06-20 | 2005-05-17 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device |
US6862223B1 (en) * | 2002-07-05 | 2005-03-01 | Aplus Flash Technology, Inc. | Monolithic, combo nonvolatile memory allowing byte, page and block write with no disturb and divided-well in the cell array using a unified cell structure and technology with a new scheme of decoder and layout |
US6891752B1 (en) | 2002-07-31 | 2005-05-10 | Advanced Micro Devices | System and method for erase voltage control during multiple sector erase of a flash memory device |
US6842380B2 (en) * | 2002-08-27 | 2005-01-11 | Micron Technology, Inc. | Method and apparatus for erasing memory |
JP4005895B2 (ja) * | 2002-09-30 | 2007-11-14 | 株式会社東芝 | 不揮発性半導体メモリ装置 |
US6771541B1 (en) * | 2003-02-25 | 2004-08-03 | Nexflash Technologies, Inc. | Method and apparatus for providing row redundancy in nonvolatile semiconductor memory |
EP1453059B1 (en) * | 2003-02-28 | 2005-10-12 | STMicroelectronics S.r.l. | Gate voltage regulation system for a non volatile memory cells and a programming and soft programming phase |
US6859397B2 (en) * | 2003-03-05 | 2005-02-22 | Sandisk Corporation | Source side self boosting technique for non-volatile memory |
JP4220319B2 (ja) * | 2003-07-04 | 2009-02-04 | 株式会社東芝 | 不揮発性半導体記憶装置およびそのサブブロック消去方法 |
JP4287222B2 (ja) * | 2003-09-03 | 2009-07-01 | 株式会社東芝 | 不揮発性半導体記憶装置 |
US6958936B2 (en) * | 2003-09-25 | 2005-10-25 | Sandisk Corporation | Erase inhibit in non-volatile memories |
JP2005235287A (ja) * | 2004-02-19 | 2005-09-02 | Nec Electronics Corp | 不揮発性半導体記憶装置のプログラミング方法、プログラミング装置、及び、不揮発性半導体記憶装置 |
US7009889B2 (en) * | 2004-05-28 | 2006-03-07 | Sandisk Corporation | Comprehensive erase verification for non-volatile memory |
US7450433B2 (en) * | 2004-12-29 | 2008-11-11 | Sandisk Corporation | Word line compensation in non-volatile memory erase operations |
KR100673170B1 (ko) * | 2005-03-10 | 2007-01-22 | 주식회사 하이닉스반도체 | 향상된 소거 기능을 가지는 플래쉬 메모리 장치 및 그 소거동작 제어 방법 |
US7408804B2 (en) * | 2005-03-31 | 2008-08-05 | Sandisk Corporation | Systems for soft programming non-volatile memory utilizing individual verification and additional soft programming of subsets of memory cells |
KR100892405B1 (ko) * | 2005-03-31 | 2009-04-10 | 샌디스크 코포레이션 | 메모리 셀들의 서브세트들에 대한 개별 검증 및 추가소거를 이용한 비휘발성 메모리의 소프트 프로그래밍 |
JP4796125B2 (ja) * | 2005-03-31 | 2011-10-19 | サンディスク コーポレイション | メモリセルの部分集合を個別に検証して追加的に消去する不揮発性メモリの消去 |
KR100697285B1 (ko) * | 2005-05-11 | 2007-03-20 | 삼성전자주식회사 | 워드라인과 선택라인 사이에 보호라인을 가지는 낸드플래시 메모리 장치 |
EP1729306A1 (en) * | 2005-06-01 | 2006-12-06 | STMicroelectronics S.r.l. | NAND flash memory device with compacted cell threshold voltage distribution |
-
2006
- 2006-10-13 US US11/549,553 patent/US7499338B2/en active Active
-
2007
- 2007-10-08 CN CN200780038267.8A patent/CN101584006B/zh not_active Expired - Fee Related
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102270501A (zh) * | 2010-06-01 | 2011-12-07 | 三星电子株式会社 | 利用编程定序器的闪存器件和系统,以及编程方法 |
CN102270501B (zh) * | 2010-06-01 | 2015-11-04 | 三星电子株式会社 | 利用编程定序器的闪存器件和系统,以及编程方法 |
CN102543195A (zh) * | 2010-12-29 | 2012-07-04 | 北京兆易创新科技有限公司 | 一种非易失存储器的擦除方法和装置 |
CN106796548A (zh) * | 2014-09-06 | 2017-05-31 | Neo半导体公司 | 使用多页编程来写入非易失性存储器的方法与装置 |
CN104934064A (zh) * | 2015-07-07 | 2015-09-23 | 合肥恒烁半导体有限公司 | 一种nand型闪存存储器的块擦除方法 |
CN105976867A (zh) * | 2016-07-06 | 2016-09-28 | 北京兆易创新科技股份有限公司 | 一种存储单元的擦除方法 |
CN110808077A (zh) * | 2018-08-06 | 2020-02-18 | 三星电子株式会社 | 非易失性存储器装置及操作其的方法 |
Also Published As
Publication number | Publication date |
---|---|
US20080089132A1 (en) | 2008-04-17 |
US7499338B2 (en) | 2009-03-03 |
CN101584006B (zh) | 2013-03-13 |
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