CN101652826B - 通过电镀形成垂直器件的方法 - Google Patents
通过电镀形成垂直器件的方法 Download PDFInfo
- Publication number
- CN101652826B CN101652826B CN2008800016534A CN200880001653A CN101652826B CN 101652826 B CN101652826 B CN 101652826B CN 2008800016534 A CN2008800016534 A CN 2008800016534A CN 200880001653 A CN200880001653 A CN 200880001653A CN 101652826 B CN101652826 B CN 101652826B
- Authority
- CN
- China
- Prior art keywords
- metal
- ild layer
- vertical
- composition
- contact pad
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H51/00—Electromagnetic relays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S205/00—Electrolysis: processes, compositions used therein, and methods of preparing the compositions
- Y10S205/924—Electrolytic coating substrate predominantly comprised of specified synthetic resin
- Y10S205/925—Synthetic resin is electrically conductive
Abstract
Description
Claims (11)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/620,497 | 2007-01-05 | ||
US11/620,497 US7608538B2 (en) | 2007-01-05 | 2007-01-05 | Formation of vertical devices by electroplating |
PCT/US2008/000003 WO2008085805A1 (en) | 2007-01-05 | 2008-01-02 | Formation of vertical devices by electroplating |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101652826A CN101652826A (zh) | 2010-02-17 |
CN101652826B true CN101652826B (zh) | 2013-01-02 |
Family
ID=39594671
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008800016534A Expired - Fee Related CN101652826B (zh) | 2007-01-05 | 2008-01-02 | 通过电镀形成垂直器件的方法 |
Country Status (6)
Country | Link |
---|---|
US (2) | US7608538B2 (zh) |
EP (1) | EP2100319B1 (zh) |
JP (1) | JP5284981B2 (zh) |
KR (1) | KR101054841B1 (zh) |
CN (1) | CN101652826B (zh) |
WO (1) | WO2008085805A1 (zh) |
Families Citing this family (10)
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US7768809B2 (en) * | 2008-10-02 | 2010-08-03 | International Business Machines Corporation | Wall nucleation propagation for racetrack memory |
US9293366B2 (en) | 2010-04-28 | 2016-03-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Through-substrate vias with improved connections |
JP2012190900A (ja) * | 2011-03-09 | 2012-10-04 | Sony Corp | 半導体装置及びその製造方法 |
US9153483B2 (en) * | 2013-10-30 | 2015-10-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of semiconductor integrated circuit fabrication |
US9899324B1 (en) * | 2016-11-28 | 2018-02-20 | Globalfoundries Inc. | Structure and method of conductive bus bar for resistive seed substrate plating |
US11101175B2 (en) * | 2018-11-21 | 2021-08-24 | International Business Machines Corporation | Tall trenches for via chamferless and self forming barrier |
US20220026705A1 (en) * | 2018-11-26 | 2022-01-27 | Corning Incorporated | Methods for forming patterned insulating layers on conductive layers and devices manufactured using such methods |
KR102546286B1 (ko) | 2019-11-08 | 2023-06-22 | 씨제이제일제당 (주) | 눌은 식감을 갖는 전자레인지 조리용 냉동 포장밥 |
KR20220053293A (ko) * | 2020-10-22 | 2022-04-29 | 에스케이하이닉스 주식회사 | 테스트 더미 패턴을 갖는 반도체 장치, 그것의 제조방법 및 테스트 더미 패턴을 이용한 불량 검사 방법 |
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- 2008-01-02 WO PCT/US2008/000003 patent/WO2008085805A1/en active Search and Examination
- 2008-01-02 KR KR1020097011935A patent/KR101054841B1/ko not_active IP Right Cessation
- 2008-01-02 CN CN2008800016534A patent/CN101652826B/zh not_active Expired - Fee Related
- 2008-01-02 JP JP2009544909A patent/JP5284981B2/ja not_active Expired - Fee Related
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Also Published As
Publication number | Publication date |
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WO2008085805A1 (en) | 2008-07-17 |
EP2100319B1 (en) | 2014-03-19 |
CN101652826A (zh) | 2010-02-17 |
KR101054841B1 (ko) | 2011-08-05 |
JP5284981B2 (ja) | 2013-09-11 |
EP2100319A4 (en) | 2013-04-03 |
US20090294989A1 (en) | 2009-12-03 |
US20080166874A1 (en) | 2008-07-10 |
EP2100319A1 (en) | 2009-09-16 |
KR20090096453A (ko) | 2009-09-10 |
US8247905B2 (en) | 2012-08-21 |
US7608538B2 (en) | 2009-10-27 |
JP2010516047A (ja) | 2010-05-13 |
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