CN101689551A - 制造自对准镶嵌存储器结构的方法 - Google Patents
制造自对准镶嵌存储器结构的方法 Download PDFInfo
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- CN101689551A CN101689551A CN200880019869A CN200880019869A CN101689551A CN 101689551 A CN101689551 A CN 101689551A CN 200880019869 A CN200880019869 A CN 200880019869A CN 200880019869 A CN200880019869 A CN 200880019869A CN 101689551 A CN101689551 A CN 101689551A
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/101—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including resistors or capacitors only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/102—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components
- H01L27/1021—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components including diodes only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/868—PIN diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
Abstract
Description
Claims (26)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/786,620 US7629247B2 (en) | 2007-04-12 | 2007-04-12 | Method of fabricating a self-aligning damascene memory structure |
US11/786,620 | 2007-04-12 | ||
PCT/US2008/004665 WO2008127628A1 (en) | 2007-04-12 | 2008-04-10 | Method of fabricating a self-aligning damascene memory structure |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101689551A true CN101689551A (zh) | 2010-03-31 |
CN101689551B CN101689551B (zh) | 2012-03-21 |
Family
ID=39854083
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008800198693A Expired - Fee Related CN101689551B (zh) | 2007-04-12 | 2008-04-10 | 制造自对准镶嵌存储器结构的方法 |
Country Status (7)
Country | Link |
---|---|
US (4) | US7629247B2 (zh) |
EP (1) | EP2135283A4 (zh) |
JP (1) | JP2010524258A (zh) |
KR (1) | KR20100015477A (zh) |
CN (1) | CN101689551B (zh) |
TW (1) | TW200901393A (zh) |
WO (1) | WO2008127628A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106257675A (zh) * | 2015-06-18 | 2016-12-28 | 旺宏电子股份有限公司 | 非易失性存储元件及其制造方法 |
CN109196645A (zh) * | 2018-06-08 | 2019-01-11 | 长江存储科技有限责任公司 | 用于形成三维存储器件的双堆栈沟道孔结构的方法 |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7629247B2 (en) * | 2007-04-12 | 2009-12-08 | Sandisk 3D Llc | Method of fabricating a self-aligning damascene memory structure |
US8193074B2 (en) | 2008-11-21 | 2012-06-05 | Sandisk 3D Llc | Integration of damascene type diodes and conductive wires for memory device |
KR101038388B1 (ko) * | 2009-01-29 | 2011-06-02 | 주식회사 하이닉스반도체 | 반도체 소자의 금속 배선 형성방법 |
US7927977B2 (en) * | 2009-07-15 | 2011-04-19 | Sandisk 3D Llc | Method of making damascene diodes using sacrificial material |
US8148230B2 (en) * | 2009-07-15 | 2012-04-03 | Sandisk 3D Llc | Method of making damascene diodes using selective etching methods |
US8097498B2 (en) * | 2010-01-25 | 2012-01-17 | Sandisk 3D Llc | Damascene method of making a nonvolatile memory device |
US20110244683A1 (en) * | 2010-04-01 | 2011-10-06 | Michiaki Sano | Fabricating Voids Using Slurry Protect Coat Before Chemical-Mechanical Polishing |
US8466443B2 (en) | 2010-06-30 | 2013-06-18 | International Business Machines Corporation | Voltage sensitive resistor (VSR) read only memory |
US8879299B2 (en) | 2011-10-17 | 2014-11-04 | Sandisk 3D Llc | Non-volatile memory cell containing an in-cell resistor |
US8710481B2 (en) | 2012-01-23 | 2014-04-29 | Sandisk 3D Llc | Non-volatile memory cell containing a nano-rail electrode |
KR101993854B1 (ko) | 2012-07-16 | 2019-06-28 | 에스케이하이닉스 주식회사 | 반도체 소자의 안티퓨즈, 그 반도체 소자를 포함하는 반도체 모듈 및 시스템 그리고 그 안티퓨즈 형성 방법 |
US8658463B2 (en) | 2012-07-30 | 2014-02-25 | Hewlett-Packard Development Company, L.P. | Memristor with embedded switching layer |
US10685846B2 (en) * | 2014-05-16 | 2020-06-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor integrated circuit fabrication with pattern-reversing process |
KR20160080365A (ko) * | 2014-12-29 | 2016-07-08 | 에스케이하이닉스 주식회사 | 전자 장치 및 그 제조 방법 |
US9859292B2 (en) * | 2014-12-29 | 2018-01-02 | Macronix International Co., Ltd. | 3D memory process and structures |
KR102465967B1 (ko) | 2016-02-22 | 2022-11-10 | 삼성전자주식회사 | 메모리 소자 및 그 제조방법 |
CN107731846B (zh) | 2017-08-31 | 2019-01-01 | 长江存储科技有限责任公司 | 提高沟道通孔均一性的三维存储器形成方法 |
TWI647819B (zh) * | 2017-09-01 | 2019-01-11 | 旺宏電子股份有限公司 | 立體記憶體元件及其製作方法 |
US10199434B1 (en) | 2018-02-05 | 2019-02-05 | Sandisk Technologies Llc | Three-dimensional cross rail phase change memory device and method of manufacturing the same |
US10381366B1 (en) | 2018-02-17 | 2019-08-13 | Sandisk Technologies Llc | Air gap three-dimensional cross rail memory device and method of making thereof |
US10468596B2 (en) | 2018-02-21 | 2019-11-05 | Sandisk Technologies Llc | Damascene process for forming three-dimensional cross rail phase change memory devices |
US10580976B2 (en) | 2018-03-19 | 2020-03-03 | Sandisk Technologies Llc | Three-dimensional phase change memory device having a laterally constricted element and method of making the same |
TWI786855B (zh) * | 2021-09-29 | 2022-12-11 | 力晶積成電子製造股份有限公司 | 反熔絲結構 |
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US5441907A (en) * | 1994-06-27 | 1995-08-15 | Taiwan Semiconductor Manufacturing Company | Process for manufacturing a plug-diode mask ROM |
US6034882A (en) | 1998-11-16 | 2000-03-07 | Matrix Semiconductor, Inc. | Vertically stacked field programmable nonvolatile memory and method of fabrication |
KR100334962B1 (ko) | 1998-12-31 | 2002-06-20 | 박종섭 | 반도체소자의 금속배선 형성방법_ |
KR100343136B1 (ko) | 1999-03-18 | 2002-07-05 | 윤종용 | 이중 연마저지층을 이용한 화학기계적 연마방법 |
DE19919110C2 (de) * | 1999-04-27 | 2002-06-27 | Infineon Technologies Ag | Verfahren zum Strukturieren einer Metall- oder Metallsilizidschicht sowie ein mit diesem Verfahren hergestellter Kondensator |
US6420215B1 (en) | 2000-04-28 | 2002-07-16 | Matrix Semiconductor, Inc. | Three-dimensional memory array and method of fabrication |
US6709929B2 (en) * | 2001-06-25 | 2004-03-23 | North Carolina State University | Methods of forming nano-scale electronic and optoelectronic devices using non-photolithographically defined nano-channel templates |
US6525953B1 (en) | 2001-08-13 | 2003-02-25 | Matrix Semiconductor, Inc. | Vertically-stacked, field-programmable, nonvolatile memory and method of fabrication |
US6717222B2 (en) * | 2001-10-07 | 2004-04-06 | Guobiao Zhang | Three-dimensional memory |
US6952043B2 (en) | 2002-06-27 | 2005-10-04 | Matrix Semiconductor, Inc. | Electrically isolated pillars in active devices |
US6746910B2 (en) * | 2002-09-30 | 2004-06-08 | Sharp Laboratories Of America, Inc. | Method of fabricating self-aligned cross-point memory array |
AU2003296988A1 (en) | 2002-12-19 | 2004-07-29 | Matrix Semiconductor, Inc | An improved method for making high-density nonvolatile memory |
US6921912B2 (en) * | 2003-06-03 | 2005-07-26 | Micron Technology, Inc. | Diode/superionic conductor/polymer memory structure |
KR100546488B1 (ko) | 2003-12-26 | 2006-01-26 | 한국전자통신연구원 | 반도체 소자의 제조 방법 |
US7518196B2 (en) * | 2005-02-23 | 2009-04-14 | Intel Corporation | Field effect transistor with narrow bandgap source and drain regions and method of fabrication |
US20060273298A1 (en) * | 2005-06-02 | 2006-12-07 | Matrix Semiconductor, Inc. | Rewriteable memory cell comprising a transistor and resistance-switching material in series |
KR100689831B1 (ko) * | 2005-06-20 | 2007-03-08 | 삼성전자주식회사 | 서로 자기정렬된 셀 다이오드 및 하부전극을 갖는 상변이기억 셀들 및 그 제조방법들 |
US20080017890A1 (en) * | 2006-06-30 | 2008-01-24 | Sandisk 3D Llc | Highly dense monolithic three dimensional memory array and method for forming |
US7629247B2 (en) * | 2007-04-12 | 2009-12-08 | Sandisk 3D Llc | Method of fabricating a self-aligning damascene memory structure |
-
2007
- 2007-04-12 US US11/786,620 patent/US7629247B2/en not_active Expired - Fee Related
-
2008
- 2008-04-10 CN CN2008800198693A patent/CN101689551B/zh not_active Expired - Fee Related
- 2008-04-10 WO PCT/US2008/004665 patent/WO2008127628A1/en active Application Filing
- 2008-04-10 EP EP08727325A patent/EP2135283A4/en not_active Withdrawn
- 2008-04-10 KR KR1020097021152A patent/KR20100015477A/ko not_active Application Discontinuation
- 2008-04-10 JP JP2010503065A patent/JP2010524258A/ja active Pending
- 2008-04-11 TW TW097113343A patent/TW200901393A/zh unknown
-
2009
- 2009-11-02 US US12/611,087 patent/US8389399B2/en not_active Expired - Fee Related
-
2013
- 2013-03-01 US US13/781,983 patent/US8633105B2/en active Active
- 2013-12-24 US US14/140,468 patent/US9082786B2/en not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106257675A (zh) * | 2015-06-18 | 2016-12-28 | 旺宏电子股份有限公司 | 非易失性存储元件及其制造方法 |
CN109196645A (zh) * | 2018-06-08 | 2019-01-11 | 长江存储科技有限责任公司 | 用于形成三维存储器件的双堆栈沟道孔结构的方法 |
US10515975B1 (en) | 2018-06-08 | 2019-12-24 | Yangtze Memory Technologies Co., Ltd. | Method for forming dual-deck channel hole structure of three-dimensional memory device |
Also Published As
Publication number | Publication date |
---|---|
EP2135283A4 (en) | 2011-07-27 |
US20140117514A1 (en) | 2014-05-01 |
US9082786B2 (en) | 2015-07-14 |
US8633105B2 (en) | 2014-01-21 |
US8389399B2 (en) | 2013-03-05 |
US7629247B2 (en) | 2009-12-08 |
US20100044756A1 (en) | 2010-02-25 |
EP2135283A1 (en) | 2009-12-23 |
US20130175675A1 (en) | 2013-07-11 |
TW200901393A (en) | 2009-01-01 |
US20080254576A1 (en) | 2008-10-16 |
KR20100015477A (ko) | 2010-02-12 |
CN101689551B (zh) | 2012-03-21 |
WO2008127628A1 (en) | 2008-10-23 |
JP2010524258A (ja) | 2010-07-15 |
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