CN101714513B - 半导体装置的制造方法 - Google Patents
半导体装置的制造方法 Download PDFInfo
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- CN101714513B CN101714513B CN2009102542193A CN200910254219A CN101714513B CN 101714513 B CN101714513 B CN 101714513B CN 2009102542193 A CN2009102542193 A CN 2009102542193A CN 200910254219 A CN200910254219 A CN 200910254219A CN 101714513 B CN101714513 B CN 101714513B
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Abstract
本发明的目的在于提供一种粘着片,能够填充衬底的配线、或在半导体芯片附设的金属丝形成的凹凸,又在切割时不发生树脂飞边,而且能满足耐热性或耐湿性。本发明的粘着片的特征在于,含有:树脂100重量份,其包含含有交联性官能团的重均分子量为10万以上,且Tg为-50~50℃的高分子量成分15~40重量%、及以环氧树脂为主成分的热固化性成分60~85重量%;及填料40~180重量份,该粘着片的厚度为10~250μm。
Description
本发明是申请号为200580011773.9(国际申请号:PCT/JP2005/007529)、申请日为2005年4月20日、发明名称为“粘着片、半导体装置及半导体装置的制造方法”的发明专利的分案申请。
技术领域
本发明涉及粘着片、半导体装置及半导体装置的制造方法。
背景技术
近年来,随着半导体封装件的小型化,与半导体芯片同等尺寸的CSP(Chip Size Package,芯片寸尺封装件)、及叠层有多层半导体芯片的叠层CSP,正在普及(参照例如,日本专利特开2001-279197号公报、特开2002-222913号公报、特开2002-359346号公报、特开2001-308262号公报、特开2004-72009号公报)。作为这些公报中的例,有如图1所示的,在具有由配线4引起的凹凸的衬底3上叠层有半导体芯片A1的封装件、或如图2所示的,使用相同尺寸的半导体芯片A1两片以上的封装件,在具有由金属丝2等引起的凹凸的半导体芯片上,再叠层其他的半导体芯片的封装件等。如上述的封装件,需要使用能够填平这些凹凸,且能够确保与上部的半导体芯片的绝缘性的粘着片。图1及图2中,b1为粘接剂。
要填充配线、金属丝等的凹凸,通常采用增加粘着片厚度使其大于凹凸的高度的方式,需要降低粘着片的熔融粘度,以改善其填充性。但,另一方面,厚度且熔融粘度低的粘着片,由于晶片及粘着片的切割,会有半导体芯片端部的破损变大、及丝状屑(树脂飞边)变大的问题。
即,通常的切割工序,采用将晶片、粘着片及切割带在0℃~80℃温度下贴合后,使用旋转刀具同时切断,经清洗后得到附有粘接剂的半导体芯片的工序。有粘着片或晶片的切断碎屑附着在该切断后形成的切割带的槽,该些碎屑在切断后的清洗工序或半导体芯片拾取时,从切割带剥离, 变成丝状的碎屑(树脂飞边),附着在半导体芯片,有时污染电极等。
由以上各方面可知,现正期望有一种粘着片,不仅切割性优越,且针对由配线或金属丝等引起的凹凸的填充性优越,更能够满足耐热性或耐湿性。
发明内容
本发明的目的在于提供一种粘着片,可填充衬底的配线、或在半导体芯片附设的金属丝等形成的凹凸,在切割时不发生树脂飞边,且能满足耐热性或耐湿性。
本发明的发明人发现使用特定的树脂组成的粘着片,能够防止在切割时发生树脂飞边,而且能用以填充衬底的配线、或半导体芯片的金属丝等形成的凹凸(可在粘着片中埋入凸部,或用粘着片填充凹部),从而完成了本发明。
即,本发明涉及一种粘着片,其特征在于,其包含:树脂100重量份,其包含含有交联性官能团的重均分子量为10万以上,且Tg为-50~50℃的高分子量成分15~40重量%、及以环氧树脂为主成分的热固化性成分60~85重量%;及填料40~180重量份,该粘着片的厚度为10~250μm。
另外,本发明涉及上述粘着片,固化前在25℃时,由动态粘弹性测定所得的储存弹性率为200~3000MPa,80℃时由动态粘弹性测定所得的储存弹性率为0.1~10MPa。
另外,本发明涉及上述粘着片,固化后在170℃时,由动态粘弹性测定所得的储存弹性率为20~600MPa。
另外,本发明涉及上述粘着片,在固化前的100℃时的熔融粘度为1000~7500Pa·s。
另外,本发明涉及上述粘着片,含有树脂100重量份及填料60~120重量份。
另外,本发明涉及上述粘着片,填料的莫氏硬度为3~8。
另外,本发明涉及上述粘着片,填料的平均粒径为0.05~5μm,表面系数为2~200m2/g。
另外,本发明涉及上述粘着片,其在以下所述的工序中使用:在将晶 片、粘着片及切割带在0℃~80℃贴合,再用旋转刀具同时切断晶片、粘着片及切割带,得到附有粘接剂的半导体芯片后,将该附有粘接剂的半导体芯片以0.001~1MPa的载荷粘接在有凹凸的衬底或半导体芯片,用粘接剂填充凹凸的工序。
另外,本发明涉及多层粘着片,其具有第一粘接剂层及第二粘接剂层直接或间接地叠层的构造而成,其中,至少第二粘接剂层由上述粘着片构成,且该第一粘接剂层的流动量Aμm、厚度aμm、和第二粘接剂层的流动量Bμm、厚度bμm,具有A×3<B且a×2<b的关系。
另外,本发明涉及多层粘着片,其具有第一粘接剂层及第二粘接剂层直接或间接地叠层的构造而成,其中,至少第二粘接剂层由上述粘着片构成,且第一粘接剂层的熔融粘度αPa·s、厚度aμm、和第二粘接剂层的熔融粘度βPa·s、厚度bμm,具有α>β×3且a×2<b的关系。
另外,本发明涉及上述的多层粘着片,在贴合晶片、粘着片及切割带时,与晶片相接的一侧为第一粘接剂层,与切割带相接的一侧为第二粘接剂层。
本发明涉及半导体装置的制造方法,包括以下所述的工序:将晶片、上述粘着片、及切割带在0℃~80℃贴合,用旋转刀具同时切断晶片、粘着片及切割带,得到附有粘接剂的半导体芯片后,将该附有粘接剂的半导体芯片,用0.001~1MPa的载荷,粘接在有凹凸的衬底或半导体芯片,用粘接剂填充凹凸的工序。
另外,本发明涉及该半导体装置的制造方法,在将附有粘接剂的半导体芯片粘接在有凹凸的衬底或半导体芯片上之际,加热凹凸。
本发明涉及半导体装置,使用上述粘着片,粘接半导体芯片与衬底,或粘接半导体芯片与半导体芯片而成。
本专利申请所公开的内容,与2004年4月20日提出申请的日本专利特愿2004-124118号,及2004年12月3日提出申请的日本专利特愿2004-351605号所记载的主题有关联,其公开的内容,引用于此。
附图说明
图1是表示CSP的一个实施方式的剖面图。
图2是表示叠层CSP的一个实施方式的剖面图。
图3是表示本发明的粘着片、半导体晶片、及切割带的一个实施方式的剖面图。
图4是表示本发明的多层粘着片、半导体晶片、及切割带的一个实施方式的剖面图。
图5是表示使用了本发明的粘着片的附有粘接剂的半导体芯片,与金属丝接合的芯片粘接时的工序的一个实施方式的示意图。
图6是表示本发明的附有基材膜的粘着片的一个实施方式的剖面图。
图7是表示本发明的附有基材膜的多层粘着片的一个实施方式的剖面图。
图8是表示本发明的附有粘接剂的半导体芯片的一个实施方式的剖面图。
具体实施方式
本发明粘着片的特征为,其包含:含有交联性官能团的重均分子量为10万以上,且Tg在-50℃~50℃的高分子量成分15~40重量%、及以环氧树脂为主成分的热固化性成分60~85重量%的树脂100重量份;填料40~180重量份,其厚度为10~250μm。
本发明的粘着片,只要是包含含有交联性官能团的重均分子量为10万以上,且Tg在-50℃~50℃的高分子量成分15~40重量%、及以环氧树脂为主成分的热固化性成分60~85重量%的树脂100重量份、和填料40~180重量份的粘着片,其构成成分无特别限制,但出于需有适当的粘稠强度、片状且处理性良好的方面,除有高分子量成分、热固化性成分、及填料之外,还含有固化促进剂、催化剂、添加剂、偶联剂等也可。
作为高分子量成分,可枚举具有环氧基、醇性或酚性羟基、羧基等的交联性官能团的聚酰亚氨树脂、(甲基)丙烯酸树脂、聚氨酯树脂、聚苯醚树脂、聚醚酰亚胺树脂、苯氧基树脂、改性聚苯醚树脂等,但不限定于这些物质。
上述的粘着片,高分子量成分的含量有树脂的15~40重量%时有良好的填充性,高分子量成分的含量进而优选20~37重量%,更优选25~ 35重量%。
本发明的高分子量成分,是指Tg(玻璃化温度)-50℃~50℃的具有交联性官能团、重均分子量为10万以上的高分子量成分。
高分子量成分优选例如含有缩水甘油基丙烯酸酯、或缩水甘油基甲基丙烯酸酯等的官能度单体聚合所得的重均分子量10万以上的环氧基含有(甲基)丙烯酸共聚物等。作为环氧基含有(甲基)丙烯酸共聚物,可使用例如(甲基)丙烯酸酯共聚物、丙烯酸橡胶等,优选丙烯酸橡胶。
丙烯酸橡胶是以丙烯酸酯为主成分,主要为以丁基丙烯酸酯与丙烯腈等的共聚物、或乙基甲基丙烯酸酯与丙烯腈等的共聚物等构成的橡胶。
在高分子量成分的Tg超过50℃时,有时片材的柔软性减低,Tg未达-50℃则片材的柔软性太高,在晶片切割时片材不易被切断,容易产生碎片。
另外,高分子量成分的重均分子量,优选在10万以上、100万以下,分子量小于10万时片材的耐热性可能会降低。分子量超过100万时片材的流动性有降低的场合。另外,重均分子量是用凝胶渗透色谱法(GPC)使用标准聚苯乙烯的校正曲线的聚苯乙烯换算值。
由于晶片切割时粘着片容易被切断、不易产生树脂碎屑、以及耐热性高的方面,优选Tg在-20℃~40℃且重均分子量为10万~90万的高分子量成分,优选Tg在-10℃~40℃且分子量为20万~85万的高分子量成分。
本发明使用的热固化成分,优选具有在半导体芯片实际安装时要求的耐热性及耐湿性的环氧树脂。另外,本发明中所称的“以环氧树脂为主成分的热固化性成分”中也含有环氧树脂固化剂。该环氧树脂只要是固化后发挥粘接作用者即可,不特别限定。例如,可以使用双酚A型环氧树脂、双酚F型环氧树脂、双酚S型环氧树脂等双官能环氧树脂、及酚醛型环氧树脂、或甲酚酚醛型环氧树脂等酚醛型环氧树脂等。另外,可以适用通常所知的树脂如多官能环氧树脂、缩水甘油基胺型环氧树脂、含杂环环氧树脂、或脂环族环氧树脂等。
特别是由于在B阶段状态的薄膜的挠曲性高的方面,环氧树脂的分子量优选在1000以下,更优选在500以下。另外,优选同时使用挠曲性优 越的分子量500以下的双酚A型或双酚F型环氧树脂50~90重量份、及固化物的耐热性优越的分子量800~3000的多官能环氧树脂10~50重量%。
作为环氧树脂固化剂,可使用通常所用的公知固化剂,例如在一个分子中含有两个以上的像胺类、聚酰胺、酸酐、多硫化物、三氟化硼、双酚A、双酚F、双酚S等的双酚类、苯酚酚醛清漆树脂(phenol novolac resin)、双酚A型酚醛清漆树脂、或甲酚酚醛清漆树脂(cresol novolac resin)等酚醛树脂等。
本发明的粘着片,为了在B阶段状态的粘着片的切割性、粘着片的处理性、热传导性的提高、调整熔融粘度、赋与触变性(thixotropic)等目的,优选配合无机填料。
作为无机填料,可以枚举例如,氢氧化铝、氢氧化镁、碳酸钙、碳酸镁、硅酸钙、硅酸镁、氧化钙、氧化镁、氧化铝、氮化铝、硼酸铝须晶、氮化硼、结晶二氧化硅、非晶二氧化硅、锑氧化物等。为提高其热传导性,优选氧化铝、氮化铝、氮化硼、结晶二氧化硅、非晶二氧化硅等。出于调整熔融粘度或赋与触变性为目的,优选氢氧化铝、氢氧化镁、碳酸钙、碳酸镁、硅酸钙、硅酸镁、氧化钙、氧化镁、氧化铝、结晶二氧化硅、非晶二氧化硅等。另外,为提高切割性,优选氧化铝、二氧化硅。
出于提高切割性,粘着片的固化后储存弹性率在170℃下为50~600MPa,金属丝接合性良好的方面,优选相对于树脂100重量份,含有40~180重量份的本发明的上述填料的用量。填料量相对于树脂100重量份,更优选60~160重量份,进而优选60~120重量份。
若填料的用量变多,则粘着片的储存弹性率过渡升高,使粘着性降低,残留空隙,容易引起电特性降低的问题,故优选填料用量在180重量份以下。填料的配合量少时,则有在切割时容易产生树脂飞边的倾向。
本发明的发明人,发现通过填料的添加可大幅减少在下述的切割工序中产生的树脂飞边。即切割工序,通常用旋转刀具同时切断晶片、粘着片、切割带,清洗后制得附有粘着片的半导体芯片。在该切断后形成的切割带的槽中,附着粘着片或晶片切断的碎屑,这些碎屑在切断时或切断后等的清洗或芯片拾取时,由切割带剥离成丝状,从而,存在产生树脂飞边的情 况。
使用本发明的粘着片的场合,特别是使用硅、氧化铝填料,相对于树脂100重量份,含有40~180重量份,切割时产生的树脂或硅的切断屑,形成以填料为中心的细粉体状,容易与清洗水一起除去。因此,使用本发明的粘着片时,在切割带上滞留的切断屑的量很少。又因该少量的切断屑密着在切割带上,很难从切割带剥离成丝状。
对此,在不含有填料的场合,切屑为粘土状,因不能与清洗水一起除去,故在切割带上附着大量的切断屑。该些切断屑,在清洗时或半导体芯片拾取时很容易从切割带剥离,故产生大量的树脂飞边。
再者,因本发明的粘着片含有填料,在切断粘着片时旋转刀具上不残留树脂,研磨旋转刀具的同时,在短时间内良好地切削粘着片。因此,从旋转刀具的研磨效果及粘着片的切断性两方面,优选粘着片含有硬填料,更优选含有硬度在莫氏硬度(10级别)3~8的范围的填料,进而优选含有莫氏硬度6~7的填料。若填料的莫氏硬度(10级别)小于3,则旋转刀具的研磨效果小,若莫氏硬度超过8,则有旋转刀具寿命减短的倾向。莫氏硬度3~8的填料,有方解石、大理石、金(18K)、铁等(莫氏硬度3)及氟石、珍珠(莫氏硬度4)、磷灰石、玻璃等(莫氏硬度5)、正长石、蛋白石等(莫氏硬度6)、硅石、水晶、电石等(莫氏硬度7)。其中优选价格低廉且容易入手的硅石。
若填料的平均粒径小于0.05μm,则使填料保持旋转刀具的研磨效果,使粘着片具有流动性,有困难的倾向。另外,若平均粒径大于5μm,则有粘着片的薄膜化困难,保持粘着片表面的平滑性困难的倾向。因此,为保持粘着片的流动性及表面的平滑性,填料的平均粒径优选0.05~5μm,从流动性优越的方面,更优选平均粒径的下限为0.1μm,特别优选是0.3μm。另外,由平滑性的方面,更优选平均粒径的上限为3μm,特别优选1μm。
本发明使用雷射绕射式粒度分布测定装置(日机装制マイクロトラツク)测定填料的平均粒径。具体来说,量取填料0.1~1.0克,用超声波分散后,测定其粒度分布,以该分布的累积重量为50%的粒径为平均粒径。
填料的表面系数也与填料的平均粒径相同,由流动性及表面平滑的方面,优选表面系数2~200m2/g。再由流动性的方面,更优选表面系数的上 限为50m2/g,特别优选10m2/g。
另外,本发明的表面系数(BET表面系数)是通过布龙瑙尔-埃梅特-特勒(Brunauer-Emmett-Teller)式,在无机填料中吸附氮气而测定其表面积的值,可使用市售的BET装置测定。
本发明的粘着片是通过将上述高分子量成分、环氧树脂为主成分的热固化成分、填料、及其他成分在有机溶剂中混合、搅拌调制成清漆后,在基材膜上形成上述清漆的层,再加热干燥后除去基材,制成粘着片。上述的混合、搅拌操作,可利用通常的搅拌机、捣碎机、三辊机、球研磨机等分散机等适宜组合进行。上述的加热干燥的条件,无特别限定,只要能够让使用的溶剂充分挥发即可,但通常在60℃~200℃进行加热0.1~90分钟。
上述粘着片制造的清漆的调制所用的有机溶剂、及粘着片调制后的残存挥发部分,只要能将材料均匀溶解,可搅拌或分散即可,无特别限定,可使用先前公知的溶剂。如此的溶剂有例如二甲基甲酰胺、二甲基乙酰胺、N-甲基吡咯烷酮、丙酮、丁酮、环己酮等酮系溶剂、及甲苯、二甲苯等。从干燥速度快、价格低廉的方面,优选丁酮、环己酮等。
有机溶剂的使用量,只要粘着片调制后的残存挥发部分在总重量基准的0.01~3重量%即可,无特别限定,但从耐热可靠性的观点,优选在总重量基准的0.01~2重量%,进而优选在总重量基准的0.01~1.5重量%。
粘着片的膜厚,为了要填充衬底的配线电路、或设在下层的半导体芯片的金属丝等的凹凸,设定在10~250μm。若比10μm更薄,则有应力缓和效果或粘着性变差的倾向,若膜厚度大于250μm则不仅不经济,而且不能适应半导体装置的小型化要求。又从粘着性高且能使半导体装置小型化的方面,优选20~100μm,更优选40~80μm。
本发明的粘着片,在固化前(B阶段状态)25℃的动态粘弹性测定所得的储存弹性率为200~3000MPa的场合,因切割性优越的方面,因此,优选。从切割性优越且与晶片的密接性优越的方面,优选储存弹性率为500~2000MPa。另外,若粘着片固化前(B阶段状态)80℃的动态粘弹性测定所得的储存弹性率为0.1~10MPa,在80℃时可能在晶片上形成叠层。在对晶片的密接性高的方面,特别优选储存弹性率为0.5~5MPa。
本发明粘着片,固化后(C阶段状态)在170℃的动态粘弹性测定所得的储存弹性率,为得到良好的金属丝接合性,优选20~600MPa。该储存弹性率更优选40~600MPa,进而优选40~400MPa。
弹性率,可使用动态粘弹性测定装置(レオロジ一社制,DVE-V4)测定(样品尺寸:长度20mm、宽度4mm,温度范围-30~200℃、升温速度5℃/min、牵引模式、10Hz、自动静载荷)。
本发明的粘着片,使用具有多层构造的多层粘着片也可。例如,使用将上述的粘着片二片以上叠层而成的、或将本发明的粘着片与其他粘着片多个叠层的皆可。
例如可用含有第一粘接剂层与第二粘接剂层直接或间接叠层的构造而成的多层粘着片,至少该第二粘接剂层是由本发明的粘着片形成,且可以作为该第一粘接剂层的流动量A、厚度aμm、和第二粘接剂层的流动量B、厚度bμm具有A×3<B且a×2<b的关系的多层粘着片使用。多层粘着片在晶片、粘着片、及切割带贴合之际,优选与晶片相接的一侧为第一粘接剂层,与切割带相接的一侧为第二粘接剂层。
通过做成上述的两层片材,根据A或B的绝对值,在粘接时选择适当的压力、温度、时间(其中特别是压力),由此可使第二层填埋凹凸,第一层不被凹凸撕破地粘接。总之,能确保配线或金属丝的填充性、及配线或金属丝与上部半导体芯片的绝缘性。A×3≥B的场合,第一粘接剂层阻碍配线或金属丝窜入的效果低,存在与形成凹凸的衬底上的电路或位于金属丝的上部的半导体芯片接触,不能确保绝缘的倾向。另外,a×2≥b的场合,对凹凸或金属丝的填充性降低,有易发生空隙的倾向。
本发明中的流动量,可以通过将固化前的粘着片与PET薄膜冲裁成1×2cm的条状的样品,再用热压接试验装置(日本テスタ一产业株式会社制),以热板温度100℃、压力1MPa,施压18秒钟后,用光学显微镜测定由样品的端部突出的树脂的长度而得到。
另外,例如可用由第一粘接剂层与第二粘接剂层形成直接或间接地叠层构造的多层粘着片,至少第二粘接剂层由本发明粘着片形成,且可以作为第一粘接剂层的熔融粘度αPa·s、厚度aμm、及第二粘接剂层的熔融粘度βPa·s,厚度bμm具有α>β×3且a×2<b的关系的多层粘着片使用。多 层粘着片在晶片、粘着片、及切割带贴合之际,优选与晶片粘接相接的一侧为第一粘接剂层,与切割带相接的一侧为第二粘接剂层。
通过做成上述的两层片材,根据α或β的绝对值,在粘接时选择适当的压力、温度、时间(其中特别是压力),由此可使第二层填埋凹凸,第一层不被凹凸撕破地粘接。总之,能确保配线或金属丝的填充性、及配线或金属丝与上部半导体芯片的绝缘性。α≤β×3的场合,第一粘接剂层阻碍配线或金属丝窜入的效果降低,存在与形成凹凸的衬底上的电路或位于金属丝的上部的半导体芯片接触,不能确保绝缘的倾向。另外,a×2≥b的场合,凹凸或金属丝的填充性降低,有容易发生空隙的倾向。
本发明的熔融粘度,可通过用后述的平行平板塑性测定法,测定固化前的粘着片而算出。
另外,优选上述的A、B、α、β、a、b分别在适当的范围内。优选A在100~400μm,优选B在300~2000μm,过低时,填充性恶化,过大时则有树脂自半导体芯片端部渗出变多的倾向。优选α在3000~150万Pa、,优选β在1000~7500Pa·s,特别优选在1000~5000Pa·s,进而优选在1500~3000Pa·s。过高则填充性恶化,过低则有树脂自半导体芯片端部渗出太多的倾向。另外,优选a在5~30μm,优选b为10~250μm。另外,优选粘着片以单层使用的场合,粘着片单体的流动、熔融粘度及厚度分别在上述中规定的B、β及b的范围内。
第一粘接剂层只要能在80℃以下与晶片贴附,无特别限制,可以使用日立化成工业(株式会社)制的High Touch HS-210、HS-230等。第二粘接剂层,可使用本发明的粘着片。
优选的组合的一例,有如用High Touch HS-230(流动量250μm、厚度10μm、熔融粘度32万Pa·s)及本发明的粘着片(流动量1000μm、厚度70μm、熔融粘度2200Pa·s)。此场合,满足A×3<B、α>β×3、a×2<b的关系式。
本发明的粘着片,可以单独使用,也可以作为一实施方式,将本发明的粘着片叠层在以往公知的切割带上,形成切割带一体型粘着片使用。此场合,晶片上的叠层工序可一次完成,从这一点来说,作业实现效率化。
本发明使用的切割带,可以枚举例如聚四氟乙烯薄膜、聚对苯二酸乙 二醇酯薄膜、聚乙烯薄膜、聚丙烯薄膜、聚甲基戊烯薄膜、聚酰亚胺薄膜等的塑料薄膜等。另外,也可以根据需要进行涂底料涂布、UV处理、电晕放电处理、研磨处理、蚀刻处理等表面处理。优选切割带有粘着性,可以对上述的塑料薄膜赋予粘着性,或在上述塑料薄膜的表面设置粘接剂层也可。这可以通过涂布以下所述的树脂组成物来形成:通过调节树脂组成物的液态成分的比率、高分子量成分的Tg而得到的具有适度的粘稠强度的树脂组成物。
另外,在将粘着片使用于半导体装置制造之际的场合,希望在切割时有不使半导体芯片飞散的粘着力,在其后的拾取时又可以从切割带剥离。例如,粘着片的粘着性过高,则拾取有困难。因此优选适当地调节粘着片的粘稠强度,作为该方法,利用粘着片的室温下的流动性提高,粘着强度及粘稠强度就有上升的倾向、及流动性降低,粘着强度及粘稠强度就有下降的倾向即可。例如,要提高流动性的场合,有增加可塑剂的含量、增加粘着赋予材料的含量等方法。相反地,要降低流动性的场合,减少上述化合物含量即可。上述的可塑剂有例如单官能的丙烯酸单体、单官能的环氧树脂、液态环氧树脂、丙烯酸系树脂、环氧系的所有稀释剂等。
在切割带上叠层粘着片的方法,除印刷法之外,可枚举将预先制成的粘着片在切割带上加压、加热压光辊叠层的方法等,加热压光辊叠层法可连续地制造,效果好,由于这一点优选。
另外,切割带的膜厚,无特别的限制,根据粘着片的膜厚或切割带一体型粘着片的用途,及本领域普通技术人员的知识而确定,但在经济性好,胶带的处理性好的方面,采用60~150μm,优选70~130μm。
本发明的粘着片,优选使用于半导体装置的制造,更优选使用于包含如下所述的工序的半导体装置的制造:将晶片、粘着片、及切割带在0℃~80℃下贴合后,用旋转刀具同时切断晶片、粘着片及切割带,制得附有粘接剂的半导体芯片,将该附有粘接剂的半导体芯片在有凹凸的衬底或半导体芯片上,用0.001~1MPa的载荷粘接,用粘接剂填充凹凸的工序。
本发明的晶片,除可以使用单晶硅之外,还可以使用多晶硅,各种陶瓷,砷化镓等化合物的半导体等。
在将粘着片以单层使用的场合,在晶片贴合粘着片后,在粘着片面贴 合切割带即可。另外,在使用多层粘着片的场合,可以依次在晶片上贴合第一粘接剂层及第二粘接剂层,也可以预先制成包含第一粘接剂层及第二粘接剂层的多层粘着片,再将该多层粘着片贴合到晶片。另外,通过使用本发明的粘着片或多层粘着片、及具备切割带的切割带一体型粘着片,还可以制造半导体装置。
将粘着片贴附在晶片的温度,即叠层温度为0℃~80℃,优选15℃~80℃,更优选20℃~70℃。若超过80℃,则贴附粘着片后,晶片的弯曲有加大的倾向。
在贴附切割带或切割带一体型粘着片之际,也优选在上述的温度下进行。
图3表示本发明的一个实施方式的粘着片b、半导体晶片A、及切割带1的剖面图。另外,图4表示本发明的另一实施方式的多层粘着片c、半导体晶片A、及切割带1的剖面图。图4中,a表示第一粘接剂层,b’表示第二粘接剂层。
其次,使用切割刀具切割已贴附有粘着片与切割带的半导体晶片,再经清洗、干燥程序,可制得附着有粘接剂的半导体芯片。
另外,其他的实施方式为如图6所示,本发明的粘着片,制成在基材薄膜5的上面设置有粘着片b的附有基材薄膜的粘着片使用也可。如此则在用粘着片单体处理困难的场合也较方便,例如,将图6所示的结构的附有粘着片与上述的切割带贴合后,剥离该基材薄膜5,其后再贴合半导体晶片A,就容易形成如图3所示的构造,另外,可以不剥离该基材膜5的状态下作为覆膜使用。
作为上述基材薄膜5,无特别限定,例如聚酯薄膜、聚丙烯薄膜、聚对苯二甲酸乙二醇酯薄膜、聚酰亚胺薄膜、聚醚酰亚胺薄膜、聚醚萘酯薄膜、甲基戊烯薄膜等。
本发明的粘着片,作为如图7所示的该多层粘着片,也可以使用在基材薄膜上依次设置有第二粘接剂层b’、第一粘接剂层a的附有基材薄膜的粘着片。另外,按第一粘接剂层a、第二粘接剂层b’的顺序在基材薄膜上叠层也可。
本发明的粘着片的另外的实施方式为如图6及图7所示的构造,且其 粘着片自身也可以发挥作为切割带的功能。此种粘着片称作切割小片接合一体型粘着片等,用一个膜片发挥作为切割带与作为粘着片的功能,因此,如图8所示,只在切割后拾取就可得到附有粘接剂的半导体芯片。
要使粘着片具有上述的功能,例如使粘着片含有光固化性高分子量成分、光固化性单体、光引发剂等光固化性成分即可。如上述的一体型片材,在将半导体芯片与衬底或半导体芯片粘接的阶段,进行光照射,其固化前的25℃的动态粘弹性测定的储存弹性率、固化前的80℃的动态粘弹性测定的储存弹性率各值,是指在光照射进行后,热固化进行前的阶段测定的值。
切割小片接合一体型的粘着片,优选使用于含有如下所述的工序的半导体装置的制造:晶片、粘着片及基材薄膜在0℃~80℃贴合后,用旋转刀具同时切断晶片、粘着片、基材薄膜,分成附有粘接剂的半导体芯片后,用该附有粘接剂的半导体芯片在有凹凸的衬底或半导体芯片,以载荷0.001~1MPa粘接,并用粘接剂填充凹凸的工序。
如图5所示,上述所得的附有粘接剂的半导体芯片A1,在具有由配线4引起的凹凸的衬底3或具有由金属丝2引起的凹凸的半导体芯片上,借助粘接剂b1以载荷0.001~1MPa粘接,由粘接剂填充凹凸。优选载荷0.01~0.5MPa,更优选0.01~0.3MPa。若载荷小于0.001Mpa,则有产生空隙、降低耐热性的倾向,若超过1Mpa,则可能使半导体芯片破损。
图5是表示将附有粘接剂的半导体芯片在引线接合的半导体芯片上粘接时的工序的一例的示意图。
本发明,在将附有粘接剂的半导体芯片向衬底或半导体芯片粘接时,优选对衬底的配线、半导体芯片的金属丝等的凹凸加热。加热温度优选60℃~240℃,更优选100℃~180℃。若温度低于60℃,则有粘接性降低的倾向,若超过240℃,则有衬底变形,弯曲变大的倾向。加热的方法,有使衬底或半导体芯片接触预先加热过的加热板的方法、向衬底或半导体芯片照射红外线或微波的方法、吹送热风等方法。
本发明因使用含有特定的树脂组成的粘着片,在切割时,旋转刀具切割晶片或粘着片产生的切割碎屑,在切断后的清洗时,或芯片拾取时,可以不从切割带剥离成丝状。另外,使层构造多层化,特别是流动性低的层 与高的层叠层的粘着片、或熔融粘度高的层与低的层叠层的粘着片,其配线电路及金属丝的填充性、及上下的半导体芯片间的绝缘性优越。
另外,本发明的粘着片,对配线电路及金属丝的填充性良好,且在半导体装置的制造时,在同时切断晶片与粘着片的切割工序的切断性优越,能够提高切割的速度。因此,根据本发明的粘着片可知,可提高半导体装置的成品率及制造速度。
再者,本发明的粘着片,在半导体装置的制造中的半导体芯片与衬底或下层芯片等的支持部件的粘接工序中,可作为粘接可靠性优越的粘着片使用。即,本发明的粘着片,在半导体搭载用支持部件上安装半导体芯片时,具有所需的耐热性、耐湿性、绝缘性,而且作业性优越。
(实施例)
[粘着片的组成与制造方法]
(实施例1)
环氧树脂使用双酚F型环氧树脂(使用环氧当量160、东都化成株式会社制商品名YD-8170C)30重量份、及甲酚酚醛型环氧树脂(使用环氧当量210、东都化成株式会社制商品名YDCN-703)10重量份。环氧树脂的固化剂使用苯酚酚醛清漆树脂(使用大日本インキ化学工业株式会社制商品名プライオ一フエンLF2882)27重量份。含有环氧基的丙烯酸系共聚物,使用含有环氧基的丙烯酸橡胶(使用凝胶渗透色谱法所得重均分子量为80万、缩水甘油基甲基丙烯酸脂为3重量%、Tg为-7℃、ナガセケムテツクス株式会社制商品名HTR-860P-3DR)28重量份。固化促进剂使用咪唑系固化促进剂(使用四国化成工业株式会社制、キユアゾ一ル2PZ-CN)0.1重量份。硅石填料使用(使用アドマフアイン株式会社制、SO-C2、(比重2.2g/cm3、莫氏硬度7、平均粒径0.5μm、表面系数6.0m2/g))95重量份。硅烷偶联剂使用(日本ユニカ一株式会社制商品名A-189)0.25重量份及(日本ユニカ一株式会社制商品名A-1160)0.5重量份。在上述物质构成的组成物中再加入环乙酮混合搅拌,再真空脱气制成粘接剂清漆。
再将该粘接剂清漆在厚度50μm的经过脱模处理的聚对苯二甲酸乙二醇酯薄膜上涂布,经90℃、10分钟及120℃、5分钟的干燥,形成膜厚75μm 的涂膜,制作成B阶段状态的粘着片。此薄膜的流动量为757μm。
将粘着片b在60℃下叠层在需要加工的半导体晶片A(厚度80μm)上,并切断端部。再用加热压光辊层合机(Hot Roll Laminator,Du Pont制Riston)在25℃叠层切割带1(图3)。此时的切割带使用古河电工(株式会社)制的(UC 3004M-80)。切割带厚度为100μm。
(实施例2)
第一粘接剂层使用HS-230(厚度10μm),第二粘接剂层使用与第一实施例相同的粘着片在60℃叠层,制作成有第一及第二粘接剂层的多层粘着片。在第一粘接剂层与第二粘接剂层贴合的状态下测定流动量的结果,第一粘接剂层为200μm,第二粘接剂层为758μm。
将该多层粘着片,以使其第一粘接剂层与需要加工的半导体晶片A(厚度80μm)相接的方式在60℃粘接在需要加工的半导体晶片A(厚度80μm),再切断端部。其次配制切割带1,使得在切割带1上叠层第二粘接剂层b,再用加热压光辊层合机(Du Pont制Riston)在25℃形成叠层(图4)。此时切割带使用古河电工(株式会社)制的(UC 3004M-80)。切割带的膜厚为100μm。
(实施例3)
本实施方式制造与实施例1相同的粘着片,只有膜厚50μm这一点不同。
(比较例1)
除不用填料之外,其他用与实施例相同地制造试料,粘着片的流动量为2000μm。
(实施例4~8及比较例2、3)
制造与第一实施方式同样的粘着片,惟其填料、及环氧基含有丙烯酸橡胶的含量,变更为如表一所示的量。
[评价项目]
(1)固化后的弹性率
在C阶段状态,粘着片的170℃的弹性率,使用动态粘弹性测定装置(レオロジ一社制、DVE-V4)测定(样品尺寸:长20mm、宽4mm,温度范围-30℃~200℃,升温速度5℃/min、牵引模式、10Hz、自动静载 荷)。
(2)粘着力
在120℃的热板上,将半导体芯片(5mm见方)在镀金衬底(在附有铜箔的挠性衬底电解镀金(Ni:5μm,Au:0.3μm))上用粘着片粘接,进行130℃、30分钟+170℃、1小时的固化。再测定该试料的85℃/85%RH、及经48小时吸湿后在260℃的剪断强度。
(3)叠层性
用加热压光辊层合机(60℃、0.3m/分钟、0.3MPa),将宽度10mm的粘着片与晶片贴合,其后,再用TOYOBALWIN制UTM-4-100型万能拉力机在25℃的气氛中,将粘着片以90°的角度及50mm/分钟的牵引速度剥离,求出此时的90°角度的剥离强度。90°角的剥离强度为30N/m以上的场合表示叠层性良好(○),90°角的剥离强度小于30N/m时表示层压性不合格(×)。
(4)流动量
对粘着片与PET胶带冲裁成1×2cm的条状样品,用热压接试验装置(日本テスタ一产业株式会社制),在热板温度100℃,压力1MPa施压18秒钟后,再用光学显微镜测定由样品的端部突出的树脂的长度,并将其作为流动量。
(5)切割性
使用切割刀切割附有粘着片、切割带的半导体晶片,再经清洗、干燥后获得附有粘着片的半导体芯片。此时测定半导体芯片侧面的裂纹的最大高度及树脂毛刺的长度,这些在30μm以下的场合作为○,大于30μm时作为×。
(6)填充性、耐逆流破裂性、耐温度循环性
用附有粘接剂的半导体芯片,与厚度25μm的聚酰亚胺为基材制成的有高度10μm的凹凸的配线衬底,在0.1MPa、1秒、160℃的条件下贴合制造半导体装置的样品(在单面形成焊球),调查其填充性、耐热性。填充性的评估是通过研磨半导体芯片的剖面,用光学显微镜观察配线衬底的凹凸附近等,调查直径5μm以上的空隙的有无而进行。直径5μm以上的空隙不存在的为○,存在直径5μm以上的空隙的以×表示。耐热性的评 价方法适用耐逆流破裂性与耐温度循环试验。
耐逆流破裂性的评价方法为,因样品表面的最高温度为260℃,使样品保持该温度20秒钟地设定温度的IR反射炉中通过样品,然后在室温下放置,冷却处理,如此反覆处理两次,用目视与超声波显微镜,观察样品中的裂纹。如10个试料全部未发生裂纹则为○,有一个以上发生裂纹则为×。
耐温度循环性,将样品在-55℃的气氛中放置30分钟,其后在125℃的气氛中放置30分钟的工序作为一循环,在经1000循环后,用超声波显微镜观察剥离或裂纹,如10个试料全部未发生则以○表示,有一个以上发生则为×。
(7)金属丝填充性
将半导体芯片及粘着片、和在半导体芯片上形成有高度60μm的金属丝(直径25μm)的配线的半导体芯片,用0.1MPa,1秒钟.,160℃的条件下贴合制成样品,并对此样品进行填充性评价。研磨该半导体芯片的剖面,再用光学显微镜调查金属丝附近有无直径5μm以上的空隙。没有直径5μm以上的空隙的为○,有直径5μm以上空隙的为×。
(8)固化前的弹性率
在B阶段状态,粘着片的25℃及80℃的弹性率,使用动态粘弹性测定装置(レオロジ一社制,DVE-V4)测定(样品尺寸:长20mm、宽4mm,温度范围-30~200℃、升温速度5℃/min、牵引模式、10Hz、自动静载荷)。
(9)熔融粘度
粘着片的熔融粘度,使用下述的平行平板塑性测定法、计算的值。即,将粘着片叠层制作成厚度100~300μm的薄膜,再将该薄膜冲裁成直径11.3mm的圆形试样,在100℃以载荷3.0kgf加压5秒钟,由加压前后的试样的厚度,利用公式1计算熔融粘度。对实施例2的薄膜,测定各层的熔融粘度的结果,第一层的粘接剂层为32万Pa·s,第二粘接剂层为2640Pa·s。
[数学公式1]
式中,Z0为施加载荷前的粘着片的厚度,Z为施加载荷后的粘着片的厚度,V为粘着片的体积,F为施加的载荷,t表示施加载荷的时间。
以下详细说明该样品的制作方法,在粘着片单体的厚度小于100μm的场合,可使用多个粘着片贴合形成100~300μm的厚度。这是因为厚度在100~300μm时,测定值有较佳的再现性。例如粘着片单体的厚度40μm的场合,可用粘着片3~7片贴合即可。贴合的条件虽因样品而异,但只要在测定中在贴合面不发生剥离即可,通常在该粘着片未进展固化的条件下贴合。
表一中表示评价结果。
实施例1~8的粘着片,切割性良好,衬底或金属丝的凹凸的填充性也良好。比较例1~3的粘着片,任一个的切割性皆不合格。
以上用实施例说明了本发明,可知本发明的粘着片有以下的作用效果。使用本发明的粘着片的场合,在制造半导体装置的切割工序中,能够良好切断晶片与粘着片。另外,在切割时无半导体芯片飞出,拾取性也良好。又,在半导体芯片与有凹凸的衬底、附有金属丝的半导体芯片的粘接工序中,填充性优越。又,具有在搭载半导体用支撑部件安装半导体芯片时所需的耐热性与耐湿性,且作业性优越。因此,使用本发明的粘着片,可提高半导体装置的可靠性,同时也提高半导体装置的加工速度及成品率。
Claims (8)
1.一种半导体装置的制造方法,其具有:
在晶片层压切割带一体型粘着片,切断晶片及粘着片,从而得到由半导体芯片和粘接剂形成的附有粘接剂的半导体芯片的工序;
在用金属丝连接于基板的另一半导体芯片,压接所述附有粘接剂的半导体芯片,以使用粘接剂填充所述金属丝引起的凹凸的工序,
所述粘着片包含莫氏硬度为3~8的填料。
2.如权利要求1所述的半导体装置的制造方法,其中,
进行压接的工序的载荷为0.001~1MPa。
3.如权利要求1所述的半导体装置的制造方法,其中,
所述粘着片的厚度为10~250μm。
4.如权利要求1所述的半导体装置的制造方法,其中,
所述切割带一体型粘着片是将切割带和粘着片层叠而成的。
5.如权利要求1所述的半导体装置的制造方法,其中,
所述粘着片是使用包含树脂100重量份及填料40~180重量份的粘接剂组合物而成的粘着片,
所述树脂包含高分子量成分15~40重量%及以环氧树脂为主成分的热固化性成分60~85重量%。
6.如权利要求1所述的半导体装置的制造方法,其中,
所述填料的平均粒径为0.05~5μm,表面系数为2~200m2/g。
7.如权利要求6所述的半导体装置的制造方法,其中,
所述填料的平均粒径为0.3~1μm,表面系数为2~10m2/g。
8.如权利要求1所述的半导体装置的制造方法,其中,
所述粘着片中的填料的含量相对于树脂100重量份为60~120重量份。
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TW544902B (en) * | 2001-01-24 | 2003-08-01 | Sharp Kk | Semiconductor device and manufacture the same |
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US20110287250A1 (en) | 2011-11-24 |
WO2005103180A1 (ja) | 2005-11-03 |
TWI360153B (en) | 2012-03-11 |
CN101714513A (zh) | 2010-05-26 |
TW200539291A (en) | 2005-12-01 |
KR20090090404A (ko) | 2009-08-25 |
KR20070004100A (ko) | 2007-01-05 |
US8017444B2 (en) | 2011-09-13 |
US20070241434A1 (en) | 2007-10-18 |
KR101165131B1 (ko) | 2012-07-12 |
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