CN101745851B - Grinding device and grinding method - Google Patents
Grinding device and grinding method Download PDFInfo
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- CN101745851B CN101745851B CN200910251213.0A CN200910251213A CN101745851B CN 101745851 B CN101745851 B CN 101745851B CN 200910251213 A CN200910251213 A CN 200910251213A CN 101745851 B CN101745851 B CN 101745851B
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- 238000000034 method Methods 0.000 title claims abstract description 15
- 230000002787 reinforcement Effects 0.000 claims description 39
- 230000015572 biosynthetic process Effects 0.000 claims description 28
- 239000004065 semiconductor Substances 0.000 abstract description 89
- 238000010521 absorption reaction Methods 0.000 abstract description 6
- 230000002093 peripheral effect Effects 0.000 abstract description 5
- 230000003014 reinforcing effect Effects 0.000 abstract 4
- 230000007246 mechanism Effects 0.000 description 22
- 239000002245 particle Substances 0.000 description 18
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 11
- 230000009471 action Effects 0.000 description 8
- 238000005728 strengthening Methods 0.000 description 8
- 238000005520 cutting process Methods 0.000 description 7
- 238000004140 cleaning Methods 0.000 description 6
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000012423 maintenance Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 230000008569 process Effects 0.000 description 3
- 230000002159 abnormal effect Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
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- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
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- 230000009467 reduction Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
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- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
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Abstract
The present invention discloses a grinding device and a grinding method. Under the precondition that the device is not enlarged, the semiconductor wafer damage is restrained on a semiconductor wafer which is provided with a reinforcing projection at the disc-shaped peripheral area when the reinforcing projection is grinded. The surface of the semiconductor wafer is provided with a device forming area (62) which is provided with a device (61) and a peripheral area (63). A dent part (65) is formed with a mode that a back area corresponding with the device forming area (62) is removed and a reinforcing projection (64) is projected from the back area corresponding with the peripheral area. The surface of the semiconductor wafer is placed on an absorption keeping surface (34a) of a chuck (34). A grinding surface (54a) of a grinding wheel (54) obliquely abuts against the reinforcing projection (64) with a mode that the distance between the grinding surface (54a) of the grinding wheel (54) enlarges to the inner side of the dent part relatively to the inner bottom surface (65a) of the dent part of the semiconductor wafer.
Description
Technical field
The present invention relates to semiconductor wafer to carry out grinding attachment and the method for grinding of grinding.
Background technology
The semiconductor chip that is formed with the devices such as IC and LSI on surface is to make the necessary parts of various electronics miniaturization.This semiconductor chip is to manufacture like this: by the cancellate preset lines (straight line) of cutting apart, the discoid semiconductor wafer surface as workpiece is roughly divided into a plurality of rectangular areas, form device on each divided rectangular area after, along cutting apart preset lines, be partitioned into rectangular area.
In the manufacturing process of this semiconductor chip, before semiconductor wafer is cut apart, grinding is carried out in the back side of the device surface opposition side of formation device and make its skiving to set thickness.Due to the skiving of this semiconductor wafer, except realizing electronic equipment diminishes and lighten, also improved thermal diffusivity.Yet the semiconductor wafer of the rigidity of the semiconductor wafer after skiving before than skiving is low, there is warpage and the higher problem of carrying risk of producing.
So, in order to address this problem, only grinding to be carried out in the back side of semiconductor wafer and the region corresponding with the nmosfet formation region that forms device and become concavity, in the outer regions of device area, form reinforcement protuberance.Semiconductor wafer relies on this reinforcement to guarantee rigidity with protuberance, has reduced warpage and carrying risk.This formation is strengthened before cutting action, being just removed reinforcement protuberance with the semiconductor wafer of protuberance.
In the past, as the grinding attachment of remove strengthening from this semiconductor wafer with protuberance, known have by vertical shaft flat surface grinding remove the technology (for example, referring to patent documentation 1) of strengthening with protuberance.As shown in Fig. 6 (a), existing grinding attachment rotates slim abrasive grinding wheel 54 cylindraceous around the axis perpendicular to semiconductor wafer W, the grinding face 54a that makes to be positioned at the ring-type of abrasive grinding wheel 54 ends, removes and strengthens with protuberance 64 from the back side of semiconductor wafer W with protuberance 64 rotating contact relatively under parallel state with respect to strengthening.
[patent documentation 1] TOHKEMY 2007-19379 communique
But, in the grinding attachment of using in above-mentioned vertical shaft flat surface grinding, even if exist not contact of abrasive grinding wheel 54, the problem that the reinforcement that is positioned at semiconductor wafer W also can damage with the inner bottom surface 65a of protuberance 64 inner sides.Particularly, in existing grinding attachment, parallel being connected to of the grinding face 54a of abrasive grinding wheel 54 strengthened with on protuberance 64, and therefore, along with the progress of grinding, the interval of grinding face 54a and inner bottom surface 65a narrows down.And as shown in Fig. 6 (b), among grinding, abrasive particle 54b can be shed to recess 65 from abrasive grinding wheel 54, abrasive particle 54b is sandwiched between grinding face 54a and inner bottom surface 65a, upwards pulls inner bottom surface 65a and has damaged semiconductor wafer W.In this case, as shown in Fig. 6 (c), the position that the grinding face 54a it is also conceivable that at abrasive grinding wheel 54 departs from above inner bottom surface 65a, the reinforcement of semiconductor wafer W is carried out to grinding with protuberance 64, yet device can increase the size that is equivalent to abrasive grinding wheel 54 amount of movements.
Summary of the invention
In view of the above problems, the object of the present invention is to provide a kind of grinding attachment and method for grinding, it can not make device become under large prerequisite, has formed and strengthen with on the workpiece of protuberance in discoid outer regions, is suppressed at and when grinding is strengthened with protuberance, damages workpiece.
Grinding attachment of the present invention is characterised in that, this grinding attachment has: maintaining part, and the mounting surface that it has mounting workpiece keeps above-mentioned workpiece in above-mentioned mounting surface, and grinding part, it is connected to abrasive grinding wheel on the above-mentioned workpiece remaining in above-mentioned maintaining part and carries out grinding, the surface of above-mentioned workpiece has nmosfet formation region and the above-mentioned nmosfet formation region outer regions around that is formed with device, above-mentioned workpiece is to remove the region corresponding with above-mentioned nmosfet formation region at the back side, and by the mode of protuberance, form recess from outstanding reinforcement the in the region corresponding with above-mentioned outer regions at the back side, the surface of above-mentioned workpiece is positioned in the mounting surface of above-mentioned maintaining part, the mode that above-mentioned grinding attachment expands to above-mentioned recess inner side with respect to the inner bottom surface of the recess of above-mentioned workpiece with the grinding face of above-mentioned abrasive grinding wheel and the interval between above-mentioned inner bottom surface is connected to above-mentioned reinforcement protuberance obliquely by the grinding face of above-mentioned abrasive grinding wheel.
Method for grinding of the present invention is characterised in that, it is by grinding attachment grinding work piece, and this grinding attachment has: maintaining part, and it has the mounting surface of the above-mentioned workpiece of mounting, and in above-mentioned mounting surface, keeps above-mentioned workpiece, and abrasive grinding wheel is connected to the grinding part of carrying out grinding on the above-mentioned workpiece being held in above-mentioned maintaining part, above-mentioned workpiece has nmosfet formation region and the above-mentioned nmosfet formation region outer regions around that is formed with device on surface, to remove the region corresponding with above-mentioned nmosfet formation region at the back side, and by the mode of protuberance, form recess from outstanding reinforcement the in the region corresponding with above-mentioned outer regions at the back side, the surface of above-mentioned workpiece is positioned in the mounting surface of above-mentioned maintaining part, this method for grinding is characterised in that, the mode expanding to the inner side of above-mentioned recess with respect to the inner bottom surface of the recess of above-mentioned workpiece with the grinding face of above-mentioned abrasive grinding wheel and the interval between above-mentioned inner bottom surface is connected to above-mentioned reinforcement with carrying out grinding on protuberance obliquely by the grinding face of above-mentioned abrasive grinding wheel.
According to this formation, when the grinding face of abrasive grinding wheel is used protuberance butt with reinforcement, the grinding face of abrasive grinding wheel and the interval of inner bottom surface expand towards recess inner side, therefore, can be suppressed at the abrasive particle coming off from abrasive grinding wheel and be clipped in the state between grinding face and inner bottom surface, the situation that abrasive particle is pulled on inner bottom surface.Therefore,, even strengthen having fallen into abrasive particle in the process with protuberance in grinding, also can suppress the damage of workpiece.In addition, owing to making the grinding face of abrasive grinding wheel and strengthening tilting to suppress sandwiching of abrasive particle with protuberance, therefore, compare the grinding face of abrasive grinding wheel is moved to the locational formation that is offset to workpiece outside from inner bottom surface top, can reduce device volume.In addition, general grinding device carries out grinding when spraying grinding water, and the abrasive particle therefore coming off can be flushed to recess outside by grinding water, can further suppress abrasive particle and be sandwiched in the situation between grinding face and inner bottom surface.
In addition, according to grinding attachment of the present invention, above-mentioned abrasive grinding wheel has the grinding face of ring-type, and the mode that this grinding attachment contacts in a part with protuberance with above-mentioned reinforcement with the ring-type grinding face of above-mentioned abrasive grinding wheel is connected to above-mentioned reinforcement with on protuberance obliquely by the grinding face of above-mentioned abrasive grinding wheel.
In addition, according to grinding attachment of the present invention, from above-mentioned workpiece periphery, the 1st direction by center makes above-mentioned workpiece with respect to the grinding face relative tilt of above-mentioned abrasive grinding wheel, and in the 2nd direction with above-mentioned the 1st direction quadrature, make above-mentioned workpiece with respect to the grinding face relative tilt of above-mentioned abrasive grinding wheel, the mode contacting in a part with protuberance with above-mentioned reinforcement with the ring-type grinding face of above-mentioned abrasive grinding wheel is connected to above-mentioned reinforcement with on protuberance obliquely by the grinding face of above-mentioned abrasive grinding wheel.
In addition, according to grinding attachment of the present invention, the dip angle adjusting mechanism with the inclination angle of adjusting above-mentioned maintaining part, by above-mentioned dip angle adjusting mechanism, adjust the inclination angle of above-mentioned maintaining part, the mode expanding to above-mentioned recess inner side with respect to the recess inner bottom surface of above-mentioned workpiece with the grinding face of above-mentioned abrasive grinding wheel and the interval of above-mentioned inner bottom surface is connected to above-mentioned reinforcement with on protuberance obliquely by the grinding face of above-mentioned abrasive grinding wheel.
In addition, according to method for grinding of the present invention, the grinding face with ring-type, the mode contacting in a part with protuberance with above-mentioned reinforcement with the ring-type grinding face of above-mentioned abrasive grinding wheel is connected to above-mentioned reinforcement with carrying out grinding on protuberance obliquely by the grinding face of above-mentioned abrasive grinding wheel.
According to the present invention, can not make device become under large prerequisite, in discoid outer regions, formed and strengthened with on the workpiece of protuberance, suppress to damage when strengthening with protuberance grinding workpiece.
Accompanying drawing explanation
Fig. 1 means the figure of the embodiment of the grinding attachment the present invention relates to, and is the stereoscopic figure of the semiconductor wafer before processing.
Fig. 2 means the figure of the embodiment of the grinding attachment the present invention relates to, and is the stereoscopic figure of grinding attachment.
Fig. 3 means the figure of the embodiment of the grinding attachment the present invention relates to, and is the stereoscopic figure of the chuck of grinding attachment.
Fig. 4 means the figure of the embodiment of the grinding attachment the present invention relates to, and is the key diagram that grinding attachment makes the grinding action in situation that chuck only tilts to direction.
Fig. 5 means the figure of the embodiment of the grinding attachment the present invention relates to, and is the key diagram that chuck is moved to the grinding in the situation of both direction inclination.
Fig. 6 is the key diagram of the grinding action of existing grinding attachment.
Symbol description
1 grinding attachment; 4 move into and take out of unit; 5 protuberance removal units; 31 pedestals; 32 thick grinding units (grinding part); 33 fine ginding unit (grinding part); 34 chucks (maintaining part); 34a adsorbs maintenance face (mounting surface); 35 turntables; 41 ,42 grinding unit travel mechanisms; 54 abrasive grinding wheels; 54a grinding face; 54b abrasive particle; 55 dip angle adjusting mechanisms; 64 devices; 62 nmosfet formation regions; 63 outer regions; 64 reinforcement protuberances; 65 recesses; 65a inner bottom surface; W semiconductor wafer
The specific embodiment
Below, with reference to the accompanying drawings of embodiments of the present invention.The grinding attachment that present embodiment relates to is used protuberance to reduce warpage and carrying risk for the reinforcement of removing before cutting action on the peripheral edge portion that is formed on back surface of semiconductor wafer.Before the grinding attachment that starts embodiment of the present invention to relate to describes, first simple declaration is once as the semiconductor wafer of grinding object.Fig. 1 is the stereoscopic figure of the semiconductor wafer before the processing that relates to of embodiment of the present invention, (a) represents the surface (front) of semiconductor wafer, (b) represents the back side of semiconductor wafer.
As shown in Fig. 1 (a), the semiconductor wafer W before processing forms roughly discoideus, and it is by being that the cancellate not shown preset lines of cutting apart is divided into a plurality of regions at surface alignment.By cutting apart on each region that preset lines marks off, and be formed with the devices 61 such as IC, LSI in the central authorities of semiconductor wafer W.In addition, the surface of semiconductor wafer W is divided into: be positioned at middle body and be formed with the nmosfet formation region 62 of device 61, and be positioned at nmosfet formation region 62 outer regions 63 around.
As shown in Fig. 1 (b), the back side of semiconductor wafer W has been removed the region corresponding with nmosfet formation region 62, and the region corresponding with outer regions 63 forms reinforcement protuberance in the form of a ring highlightedly.Like this, at the back side of semiconductor wafer W, formed recess 65, only nmosfet formation region 62 attenuation.The semiconductor wafer W that has formed recess 65 is incorporated in box 2 (referring to Fig. 2), is moved on grinding attachment 1.
And, in the present embodiment, as workpiece, for example understand the semiconductor wafer W such as silicon wafer, yet be not limited to this formation, also can use encapsulation, pottery, glass, sapphire, silicon series substrate, the various electric elements of semiconductor article or require the various rapidoprints of precision of micron order as workpiece.In addition, reinforcement is not limited to form the parts of ring-type with protuberance 64, so long as strengthen the warpage of workpiece and the parts of intensity, for example, also can form circular-arc.
Below with reference to Fig. 2, the grinding attachment that embodiment of the present invention relates to is described.Fig. 2 is the stereoscopic figure of the grinding attachment that relates to of embodiment of the present invention.
As shown in Figure 2, grinding attachment 1 comprises following: move into the semiconductor wafer W before processing, and the moving into of semiconductor wafer W of taking out of after processing taken out of unit 4; And protuberance removal unit 5, to carrying out grinding with by its removal by moving into the reinforcement of taking out of the semiconductor wafer W of moving into unit 4 with protuberance 64.Move into and take out of the pedestal 11 that unit 4 has rectangular shape, on pedestal 11 with from its front surface 11a forwards outstanding mode a pair of box mounting portion 12,13 that mounting has box 2,3 is being set.
Move into and take out of robotic arm 14 semiconductor wafer W is moved into interim mounting portion 15 from the box 2 being positioned in box mounting portion 12, also semiconductor wafer W is taken out of to the box 3 being positioned in box mounting portion 13 from circulator cleaning part 16.Interim mounting portion 15 has interim mounting table 21 and image pickup part 22, to being positioned in the outer peripheral portion of the semiconductor wafer W in interim mounting table 21, make a video recording, by image, process to calculate the positional offset amount of the center of semiconductor wafer W and the center (center of chuck 34 described later) of interim mounting table 21.
17 pairs of wafer supply units are positioned in the positional offset amount of the semiconductor wafer W before the processing in interim mounting table 21 and proofread and correct, and are positioned on the chuck 34 of protuberance removal unit 5 simultaneously.Wafer recoverer 18 loads the semiconductor wafer W after the processing being positioned on chuck 34 on the circulator rinsing table 23 of circulator cleaning part 16.Circulator cleaning part 16 makes to be positioned in the semiconductor wafer W rotation on circulator rinsing table 23 in pedestal 11, and jet cleaning water cleans.
Protuberance removal unit 5 is configured to: make thick grinding unit 32 and fine ginding unit (fine finishining grinding unit) 33 rotation relative to the chuck 34 that is keeping semiconductor wafer W, the reinforcement of semiconductor wafer W is carried out to grinding with protuberance 64.In addition, protuberance removal unit 5 has the pedestal 31 of rectangular shape, is connected with to move into takes out of unit 4 at the front surface of pedestal 31.Upper surface at pedestal 31 is provided with the turntable 35 that is configuring three chucks 34, at the rear of turntable 35, is uprightly provided with column sections 36.
On the upper surface of pedestal 31, near the thick grinding position of turntable 35 and fine ginding position, be provided with touch sensor 38,39.This touch sensor 38,39 has two contacts, and a contact contacts with protuberance 64 with the reinforcement of semiconductor wafer W, and another contact contacts with chuck 34 upper surfaces.And, according to the difference of the height of two contacts, control grinding depth.
Column sections 36 forms the pedestal shape having under the overlooking of a pair of inclined-plane, and is provided with and makes thick grinding unit 32 and fine ginding unit 33 mobile grinding unit travel mechanism 41,42 above chuck 34 on this pair of inclined-plane.The a pair of inclined-plane of this column sections 36 forms the angle that can make thick grinding unit 32 and fine ginding unit 33 move towards corresponding respectively chuck 34 center.Grinding unit travel mechanism 41 has: not shown pair of guide rails, be configured on the inclined-plane of column sections 36, and parallel on left and right directions each other; And by electric motor driven R axle workbench 43, in slidable mode, be arranged in pair of guide rails.
In addition, grinding unit travel mechanism 41 has: pair of guide rails 45, be configured on the front surface of R axle workbench 43, and parallel on above-below direction each other; And by electric motor driven Z axis workbench 46, in slidable mode, be configured in respectively in pair of guide rails 45.On Z axis workbench 46, by being installed on the support portion 47 at front surface place, supporting thick grinding unit 32.In addition, grinding unit travel mechanism 42 also has the formation same with grinding unit travel mechanism 41, and is supporting fine ginding unit 33.
And, in the back of the body face side of each R axle workbench 43,44, each Z axis workbench 46, being formed with respectively not shown nut portions, ball-screw 48 is combined on these nut portions (not illustrating the ball-screw that R axle workbench is used).And, at the ball-screw of R axle workbench 43,44 use,, the upper end of the ball-screw 48 of Z axis workbench 46 use is connecting respectively drive motor 49, by this drive motor 49, drive ball-screw rotation (not illustrating the drive motor that R axle workbench is used).By this formation, R axle workbench 43,44 moves up in R1 direction, R2 side respectively, and Z axis workbench 46 moves at above-below direction.
Below with reference to Fig. 3, describe chuck in detail.Fig. 3 is the stereoscopic figure of the chuck that relates to of embodiment of the present invention.And for convenience of explanation, in Fig. 3, only expressed workbench part.
As shown in Figure 3, chuck 34 is discoid, and in upper face center part, the absorption that has formed toroidal by porose ceramic material keeps face 34a.Absorption maintenance face 34a is connected with the not shown attraction source in being configured in pedestal 31, and absorption keeps semiconductor wafer W.In addition, chuck 34 is configured to by not shown rotary drive mechanism and can in D2 side, rotates up around the axis L perpendicular to absorption maintenance face 34a.
Between the bottom of chuck 34 and the upper surface of chuck 35, be provided with dip angle adjusting mechanism 55.This dip angle adjusting mechanism 55, for chuck 34 is finely tuned with respect to the inclination angle of the grinding face of abrasive grinding wheel 54, is configured to and can finely tunes the inclination angle in two of quadrature θ 1 directions, θ 2 directions.θ 1 direction is that the moving direction at R axle workbench 43 is the angle adjustment direction in R1 direction (R2 direction), and θ 2 directions are the angle adjustment directions in the direction with R1 direction (R2 direction) quadrature.If to θ 1 direction inclination chuck 34, can contact two positions (referring to Fig. 4 (c)) with the ring-type grinding face of abrasive grinding wheel 54, if further to θ 2 direction inclination chucks 34, can contact (referring to Fig. 5) with the ring-type grinding face of abrasive grinding wheel 54 a position.
And, as long as being configured to, dip angle adjusting mechanism 55 can adjust chuck 34 with respect to the inclination angle of the grinding face of abrasive grinding wheel 54, for example two leverage combinations are formed.In addition in the present embodiment, dip angle adjusting mechanism 55 is designed to the inclination angle on both direction to finely tune, yet also can uses the structure of only adjusting an inclination angle in direction.
The grinding action of the grinding attachment that present embodiment relates to is described here.Fig. 4 is the key diagram that makes the grinding action in situation that the chuck of the grinding attachment that present embodiment relates to only tilts to a direction.And in the following description, illustrate and utilize thick grinding unit the reinforcement of semiconductor wafer to be carried out to the situation of grinding with protuberance, but fine ginding unit moves similarly.In addition, in the present embodiment, illustrate the inclination angle of θ 1 direction of adjusting dip angle adjusting mechanism 55, and the formation contacting with the ring-type grinding face of abrasive grinding wheel 54 at two positions.
By wafer supply unit 17, in carrying change bit, be set up on the absorption maintenance face 34a that the surface of semiconductor wafer W is loaded to chuck 34, strengthen remaining on towards upside and by semiconductor wafer W with protuberance 64 under the state adsorbing on maintenance face 34a making, the rotation by turntable 35 moves to thick grinding position by chuck 34.Now, R axle workbench 43 moves, and adjusts thick grinding unit 32 with respect to the grinding position on the radial direction of semiconductor wafer W.
As shown in Fig. 4 (a), when chuck 34 moves in thick grinding position, by dip angle adjusting mechanism 55, adjust inclination angle.Dip angle adjusting mechanism 55 slightly tilts chuck 34 in R1 direction to θ 1 direction, expand the interval between the grinding face 54a of abrasive grinding wheel 54 and the inner bottom surface 65a of the recess 65 of semiconductor wafer W.That is, with the interval of the inner bottom surface 65a of grinding face 54a and semiconductor wafer W, in R1 direction, towards the central side of semiconductor wafer W, become large mode and carry out angle adjustment.
As shown in Fig. 4 (b), when by Z axis workbench 46 by thick grinding unit 32 downwards after grinding and feeding, the grinding face 54a of abrasive grinding wheel 54 is the protuberance 64 for reinforcement of contact semiconductor wafer W obliquely.Now, as shown in Fig. 4 (c), the grinding face 54a of abrasive grinding wheel 54 contacts with protuberance 64 with the reinforcement of semiconductor wafer W in these two positions of contact portion A1, A2.
If proceed the grinding of semiconductor wafer W under this state, abrasive particle 54b can fall into from abrasive grinding wheel 54 recess 65 of semiconductor wafer W.Because the interval of the grinding face 54a of abrasive grinding wheel 54 and the inner bottom surface 65a of semiconductor wafer W is larger, the abrasive particle 54b that therefore can suppress to be shed in recess 65 is sandwiched the situation between grinding face 54a and inner bottom surface 65a.In addition, the grinding water slug being sprayed from nozzle due to the abrasive particle 54b being shed in recess 65 is to the outside of recess 65, thereby can prevent from falling the unfavorable condition of the inner bottom surface 65a of the abrasive particle 54b damage semiconductor wafer W between grinding face 54a and inner bottom surface 65a.
Then with reference to Fig. 5, explanation makes the chuck of grinding attachment move to the grinding in the situation of both direction inclination.Fig. 5 is the key diagram that makes the grinding action in situation that the chuck of the grinding attachment that present embodiment relates to tilts to both direction.
In the formation shown in Fig. 4 (c), owing to being configured to the grinding face 54a of abrasive grinding wheel 54 and the reinforcement of semiconductor wafer W contacts at two positions with protuberance 64, therefore strengthen the direction difference being ground with protuberance 64 on contact portion A1, A2.; at abrasive grinding wheel 54 to D3 direction rotation in the situation that; on contact portion A1; at the ring-type grinding face 54a of abrasive grinding wheel 54, from the reinforcement of semiconductor wafer W, with protuberance 64 inner sides, being projected into grinding the direction in outside strengthens with protuberance 64; and on contact portion A2, at the ring-type grinding face 54a of abrasive grinding wheel 54, from the reinforcement of semiconductor wafer W, with protuberance 64 outsides, enter grinding the direction of inner side and strengthen with protuberance 64.
As above, if the grinding face 54a of abrasive grinding wheel 54 uses the grinding direction of protuberance 64 on two positions different from the reinforcement of semiconductor wafer W, can produce vibration each other, likely be subject to the inordinate wear of abrasive grinding wheel 54, the impact of increase of edge Integrated Chip, abnormal vibrations, surface roughness reduction etc.In this case as shown in Figure 5, be configured to chuck 34 is tilted in θ 1 direction and this both direction of θ 2 directions, the grinding face 54a of abrasive grinding wheel 54 and the reinforcement of semiconductor wafer W are contacted on this position of contact portion A3 with protuberance 64.Like this, because the grinding face 54a of abrasive grinding wheel 54 and the reinforcement of semiconductor wafer W contact on a position with protuberance 64, therefore can suppress the inordinate wear of abrasive grinding wheel 54, the increase of edge Integrated Chip, abnormal vibrations, surface roughness reduce.
As mentioned above, the grinding attachment 1 relating to according to present embodiment, when the grinding face 54a of abrasive grinding wheel 54 uses protuberance 64 butt with reinforcement, because the interval between the grinding face 54a of abrasive grinding wheel 54 and the inner bottom surface 65a of semiconductor wafer W becomes large towards the inner side of recess 65, therefore can be suppressed at the abrasive particle 54b coming off from abrasive grinding wheel 54 is clipped in the state between grinding face 54a and inner bottom surface 65a, abrasive particle 54b is pulled into the situation on inner bottom surface 65a.Therefore,, even if abrasive particle 54b comes off in the grinding process of strengthening with protuberance 64, also can suppress the damage of semiconductor wafer W.In addition, owing to making the grinding face 54a of abrasive grinding wheel 54 and strengthening tilting with protuberance 64, suppress sandwiching of abrasive particle 54b, therefore compared and make the grinding face 54a of abrasive grinding wheel 54 move to the formation of the position of departing from inner bottom surface 65a top, can reduce device volume.
And, in the above-described embodiment, the moving direction that θ 1 direction is made as to R axle workbench 43 is the angle adjustment direction in R1 direction (R2 direction), θ 2 directions is made as to the angle adjustment direction in the direction with R1 direction (R2 direction) quadrature, yet is not limited to this.As long as make the interval between the inner bottom surface 65a of grinding face 54a and semiconductor wafer W become large towards the inner side of the recess 65 of semiconductor wafer W, it can be just any direction.
In addition, although be configured in the above-described embodiment by grinding, will strengthen removing with protuberance 64, yet without completely removing and strengthen with protuberance 64, till also can being removed to the degree of the cutting processing that does not affect subsequent handling.
In addition, in the above-described embodiment, be configured to chuck 34 is tilted with respect to the grinding face 54a of abrasive grinding wheel 54, the grinding face 54a of abrasive grinding wheel 54 and the reinforcement of semiconductor wafer W are contacted with protuberance 64, yet be not limited to this formation.As long as be configured to the grinding face 54a relative tilt that makes chuck 34 and abrasive grinding wheel 54, can also be configured to the grinding face 54a of abrasive grinding wheel 54 is tilted with respect to chuck 34.In this case, between Z axis workbench 46 and support portion 47, θ workbench is set, the grinding face 54a of abrasive grinding wheel 54 is tilted with respect to chuck 34.And then, can also the grinding face 54a of abrasive grinding wheel 54 and chuck 34 be tilted by dip angle adjusting mechanism 55 and θ workbench.
In addition, in the above-described embodiment, adopted the formation of carrying out grinding by abrasive grinding wheel 54 cylindraceous, yet so long as semiconductor wafer W grinding strengthen the structure with protuberance 64, can be also for example the abrasive grinding wheel of cup-shaped or the cylindric abrasive grinding wheel without ring-type grinding face.And then, when grinding face is in the situation of coniform inclination, can, in the situation that not driving dip angle adjusting mechanism 55 and θ workbench, towards the inner side of recess 65, expand the interval between the grinding face 54a of abrasive grinding wheel 54 and the inner bottom surface 65a of semiconductor wafer W.
In addition, this time in disclosed embodiment, all aspects are all for example, are not limited to present embodiment.Scope of the present invention is not limited only to the explanation in above-mentioned embodiment, can be presented as comprise by the scope of asking for protection represented that go out, have and be equal to the meaning of the scope of asking for protection and all changes within the scope of this.
Industrial applicability
As mentioned above, the effect that the present invention has is: in discoid outer regions, formed and strengthened with on the workpiece of protuberance, can, in the damage of the semiconductor wafer that does not make device become to suppress under large prerequisite to produce when strengthening with protuberance grinding, be particularly useful for semiconductor wafer to carry out grinding attachment and the method for grinding of grinding.
Claims (2)
1. a method for grinding, it carrys out grinding work piece by grinding attachment, and this grinding attachment has: maintaining part, it has the mounting surface of the above-mentioned workpiece of mounting, and above-mentioned workpiece is remained in above-mentioned mounting surface; And abrasive grinding wheel is connected to the grinding part of carrying out grinding on the above-mentioned workpiece remaining in above-mentioned maintaining part,
Above-mentioned workpiece has the outer regions that is formed with the nmosfet formation region of device and the surrounding of above-mentioned nmosfet formation region on surface, above-mentioned workpiece is to remove the region corresponding with above-mentioned nmosfet formation region at the back side, and by the mode of protuberance, be formed with recess from outstanding reinforcement the in the region corresponding with above-mentioned outer regions at the back side, the surface of above-mentioned workpiece is positioned in the mounting surface of above-mentioned maintaining part, this method for grinding is characterised in that
The mode expanding to the inner side of above-mentioned recess with respect to the inner bottom surface of the recess of above-mentioned workpiece with the interval between the grinding face of above-mentioned abrasive grinding wheel and the inner bottom surface of the recess of above-mentioned workpiece is connected to above-mentioned reinforcement with carrying out grinding on protuberance obliquely by the grinding face of above-mentioned abrasive grinding wheel.
2. method for grinding according to claim 1, is characterized in that, above-mentioned abrasive grinding wheel has the grinding face of ring-type,
The mode contacting in a part with protuberance with above-mentioned reinforcement with the grinding face of the ring-type of above-mentioned abrasive grinding wheel is connected to above-mentioned reinforcement with carrying out grinding on protuberance obliquely by the grinding face of above-mentioned abrasive grinding wheel.
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| JP2008308359A JP5268599B2 (en) | 2008-12-03 | 2008-12-03 | Grinding apparatus and grinding method |
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| KR101260953B1 (en) * | 2010-07-29 | 2013-05-06 | 주식회사 케이엔제이 | Work edge grinding apparatus and method using the same |
| CN105405741A (en) * | 2014-07-18 | 2016-03-16 | 无锡华瑛微电子技术有限公司 | Local cleaning device and method for wafer |
| JP6774244B2 (en) * | 2016-07-22 | 2020-10-21 | 株式会社ディスコ | Grinding device |
| CN106052602B (en) * | 2016-07-28 | 2019-05-14 | 华南理工大学 | CPU radiating fin bottom surface planarization system and its levelling method based on machine vision |
| JP7107688B2 (en) * | 2017-03-30 | 2022-07-27 | 株式会社荏原製作所 | Polishing method and polishing apparatus |
| WO2018180170A1 (en) * | 2017-03-30 | 2018-10-04 | 株式会社 荏原製作所 | Polishing method and polishing apparatus |
| JP6877585B2 (en) * | 2017-12-19 | 2021-05-26 | 東京エレクトロン株式会社 | Board processing system, board processing method and computer storage medium |
| JP7100475B2 (en) * | 2018-03-30 | 2022-07-13 | 株式会社ディスコ | Processing equipment |
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| CN1727117A (en) * | 2004-07-28 | 2006-02-01 | 丰田工机株式会社 | Method and apparatus for grinding cam with re-entrant surface |
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| JP2010131687A (en) | 2010-06-17 |
| JP5268599B2 (en) | 2013-08-21 |
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