CN101859734B - 导线架及其制造方法与封装结构的制造方法 - Google Patents

导线架及其制造方法与封装结构的制造方法 Download PDF

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CN101859734B
CN101859734B CN201010107079XA CN201010107079A CN101859734B CN 101859734 B CN101859734 B CN 101859734B CN 201010107079X A CN201010107079X A CN 201010107079XA CN 201010107079 A CN201010107079 A CN 201010107079A CN 101859734 B CN101859734 B CN 101859734B
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support plate
metal support
metal
precut
openings
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CN101859734A (zh
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张简宝徽
胡平正
江柏兴
郑维伦
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Advanced Semiconductor Engineering Inc
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Advanced Semiconductor Engineering Inc
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Abstract

本发明公开了一种导线架及其制造方法与封装结构的制造方法，该制造方法包括在进行背侧蚀刻工艺以定义出多个接触端子之前先进行预切割工艺。预切割工艺可确保个别的接触端子之间彼此独立并可提升封装体的可靠度。

Description

导线架及其制造方法与封装结构的制造方法
技术领域
本发明涉及一种导线架及其制作方法与封装结构及其制造方法，且特别是涉及一种先进四方扁平无引脚(advanced quad flat non-leaded，a-QFN)封装结构的制造方法，以及先进四方扁平无引脚封装结构的导线架及其制作方法。
背景技术
根据导线架(leadframe)的引脚(lead)的形状，四方扁平封装(quad flatpackage，QFP)可以分为I型(QFI)、J型(QFJ)与无引脚型(QFN)封装。其中，四方扁平无引脚封装具有减少引脚电感、脚位面积(footprint)小、厚度小且信号传输速度快等优点。因此，四方扁平无引脚封装为一种普遍的封装结构且适于用来作为高频(例如射频频宽(radio frequency bandwidth))传输的芯片封装。
就四方扁平无引脚封装结构而言，是利用平面型的导线架基板来制作芯片垫与其周围的接触端子(contact terminal)，即引脚垫(lead pad)。一般来说，是通过表面粘着技术(surface mounting technology，SMT)将四方扁平无引脚封装结构焊接至印刷电路板。因此，四方扁平无引脚封装结构的芯片垫或是接触端子/接垫必须符合封装工艺的能力以增加接点的可靠度。
发明内容
本发明提供一种先进四方扁平无引脚封装的制作方法，其可确保引脚接触端彼此绝缘且可增加产品的可靠度。
本发明提出一种先进四方扁平无引脚封装结构的制作方法如下所述。首先，提供金属载板，金属载板具有上表面与下表面，且金属载板的上表面配置有第一金属层，金属载板的下表面配置有第二金属层，并以第一金属层为掩模进行第一蚀刻工艺图案化金属载板的上表面，以形成至少一容置凹槽与多个第一开口，以及通过预切割工艺图案化金属载板的下表面，以形成多个预切割开口。接着，提供芯片至金属载板的容置凹槽中。然后，形成多个连接于芯片与第一金属层之间的导线。之后，在金属载板上形成封装胶体，以包覆芯片、导线与第一金属层，并填满容置凹槽与第一开口。接着，以位于金属载板的下表面的第二金属层为掩模，对金属载板的下表面进行第二蚀刻工艺，以通过蚀刻预切割开口以及更蚀穿金属载板直到填在第一开口中的封装胶体暴露出来的方式形成多个第二开口，从而形成多个引脚与芯片垫。
在本发明的实施例中，可在形成封装胶体之后，进行预切割工艺。
根据前述实施例，预切割工艺可为激光切割工艺、刀切工艺或电弧切割工艺。由于预切割工艺可确保第二蚀刻工艺可完全蚀穿剩下的基板以绝缘并定义出接触端子(引脚)及芯片垫。因此，利用预切割工艺可加宽第二蚀刻工艺的工艺窗并可减少残留金属的问题，进而提升产品的可靠度。
本发明提出一种导线架的制作方法如下所述。首先，提供金属载板，金属载板具有上表面与下表面。接着，在金属载板的上表面与下表面上分别形成第一金属层与第二金属层，且第二金属层具有多个开口。然后，以第一金属层为蚀刻掩模，对金属载板的上表面进行蚀刻工艺，以形成至少一容置凹槽与多个内引脚，多个位于内引脚之间的第一开口定义出内引脚。之后，通过开口对金属载板的下表面进行预切割工艺，以形成多个预切割开口。
本发明提出一种导线架，包括金属载板，其具有上表面与下表面，且金属载板的上表面配置有第一金属层，金属载板的下表面配置有第二金属层，第二金属层具有多个开口，其中金属载板的上表面包括至少一容置凹槽与多个第一开口，且金属载板的下表面包括多个预切割开口。
根据本发明的多个实施例，预切开口的底部是平坦的或是U形。预切开口的深度约为基板厚度的0.2倍～0.4倍。预切开口的宽度约为开口的宽度的50％～100％。
为让本发明的上述特征和优点能更明显易懂，下文特举实施例，并配合附图作详细说明如下。
附图说明
图1A～图1I绘示本发明实施例的先进四方扁平无引脚封装的工艺剖面图。
图1E’与图1E”分别绘示图1E的先进四方扁平无引脚封装结构的示例性的部分的放大剖面图与放大立体图。
图2绘示本发明实施例的先进四方扁平无引脚封装结构的剖面图。
附图标记说明
10、20：先进四方扁平无引脚封装结构
100、200：承载器
110：基板
110a：上表面
110b：下表面
114a：第一图案化光致抗蚀剂层
114b：第二图案化光致抗蚀剂层
115a：第一金属部
115b：第二金属部
116a：第一金属层
116b：第二金属层
117a：第三金属部
117b：第四金属部
120、220：芯片垫
120a：容置凹槽
122：中心部
124、224：周边部、接地环
130、230：内引脚
136、236：外引脚
138、238：引脚或接触端子
140：粘着层
150、250：芯片
160、260：导线
180、280：封装胶体
D：厚度
d：深度
S1：第一开口
S2：第二开口
Sc：预切割开口
w、W：宽度
具体实施方式
图1A～图1I绘示本发明实施例的先进四方扁平无引脚封装结构的工艺剖面图。
如图1A所示，提供基板110，其具有上表面110a与下表面110b。举例来说，基板110可为金属承载片。基板110的材料例如为铜、铜合金或是其他适合的金属材料。之后，再次参照图1A，在基板110的上表面110a上形成第一图案化光致抗蚀剂层114a，并在基板110的下表面110b上形成第二图案化光致抗蚀剂层114b。
之后，请参照图1B，以第一/第二图案化光致抗蚀剂层114a/114b为掩模，在基板110的上表面110a的被第一图案化光致抗蚀剂层114a所暴露出的部分上形成第一金属层116a，并在基板110的下表面110b的被第二图案化光致抗蚀剂层114b所暴露出的部分上形成第二金属层116b。在本实施例中，例如是以电镀的方式形成第一金属层116a与第二金属层116b。根据第一图案化光致抗蚀剂层114a与第二图案化光致抗蚀剂层114b的图案设计，第一与第二金属层116a/116b可具有多组不相连的图案或是连续层。第一金属层116a例如为镍/金层。
如图1B所示，第一金属层116a包括多个第一金属部115a与至少一第二金属部115b。第一金属部115a之后将会形成内引脚130(如图1D所示)，第二金属部115b之后将会形成芯片垫120的接地环124(如图1H所示)。相同地，第二金属层116b包括多个第三金属部117a与至少一第四金属部117b。第三金属部117a对应于之后将形成的内引脚130，且第四金属部117b对应于之后将形成的芯片垫120。
之后，请参照图1C，移除第一光致抗蚀剂层114a。然后，以第一金属层116a为蚀刻掩模对基板110的上表面110a进行第一蚀刻工艺，以移除部分的基板110并形成至少一容置凹槽120a与多个第一开口S1。第一蚀刻工艺例如为湿式蚀刻工艺(wet etching process)。由于第一蚀刻工艺为各向同性蚀刻工艺(isotropic etching process)，因此，底切(undercut)容易发生在第一金属层116a下。第一开口S1定义出多个独立的内引脚130。在形成第一金属层116a、第二金属层116b与图案化基板110之后，已初步形成承载器100。容置凹槽120a具有中心部122与环绕中心部122的周边部124。内引脚130环绕并分离于周边部124。内引脚130的排列方式可以是成行、成列或是阵列排列。周边部124之后可作为接地环(ground ring)。
因此，如图1D所示，进行水刀工艺(water-jet process)以切除或移除第一金属层116a的位于底切部分的正上方的部分。
图1E’与图1E”分别绘示图1E的先进四方扁平无引脚封装的示例性的部分的放大剖面图与放大立体图。然后，请参照图1E与图1E’，对基板100的下表面110b进行预切割工艺(pre-cutting process)，以于基板110中形成多个预切割开口(pre-cut opening)Sc。预切割开口Sc位于第二金属层116b的第三金属部117a与第四金属部117b之间，并对应于第一开口S1。宽度w例如是小于或约略等于(约50％至100％的)距离W，距离W为第二金属层116b的金属部之间的间距。举例来说，预切割开口Sc的深度d约30～50微米，预切割开口Sc的深度d约为基板110的厚度D的0.2倍～0.4倍。详细而言，如图1E”所绘示的基板110的底视图，预切割开口Sc可为浅环状沟槽，浅环状沟槽围绕或包围第二金属层116b的第三金属部117a与第四金属部117b。为清楚介绍，放大图中的相对尺寸较为夸大，但并非用以限定本发明。预切割开口的深度或形状可根据之后工艺的工艺参数而做调整。预切割工艺例如为激光切割工艺(laser cutting process)、刀切工艺(bladecutting process)或电弧切割工艺(electric arc cutting process)。随着使用不同的预切割工艺，预切割开口Sc的底部的形状亦随的不同。举例来说，对于以刀切工艺形成的预切割开口Sc而言，预切割开口Sc的底部可以是平坦的(如图1E’所示)。然而，对于以激光切割工艺或电弧切割工艺所形成的预切割开口Sc而言，预切割开口Sc的底部可以是U形(如图1E’所示)。
之后，请参照图1F，将至少一芯片150粘着至各容置凹槽120a的中心部122，其中粘着层140配置于芯片150与中心部122之间。然后，多条导线160连接于芯片150与接地环124以及内引脚130之间。换言之，芯片150通过导线160连接至接地环124与内引脚130。
接着，请参照图1G，形成封装胶体180以包覆芯片150、导线160、内引脚130、接地环124以及填满容置凹槽120a以及第一开口S1。另外，在其他实施例中，可在形成封装胶体之后进行预切割工艺，而非紧接在第一蚀刻工艺之后进行。
然后，请参照图1H，以第二金属层116b为蚀刻掩模，对承载器100的下表面110b进行第二蚀刻工艺以移除部分的基板110，并蚀穿基板110而暴露出填于第一开口S1中的封装胶体180且同时形成多个第二开口S2。由于以第二金属层116b为蚀刻掩模，第二开口S2的宽度相同于第二金属层116b的金属部之间的宽度(或间距)W。第二蚀刻工艺例如为湿式蚀刻工艺。因为预切割开口Sc位于第三金属部117a与第四金属部117b之间，第二蚀刻工艺是从基板110的预切割开口Sc进行蚀刻且进一步地蚀刻基板110直到基板110被蚀穿为止。在此，第二蚀刻工艺将预切割开口Sc扩大为第二开口S2。第二开口S2定义出多个外引脚136且使内引脚130彼此电性绝缘。换言之，在第二蚀刻工艺之后，形成多个引脚或接触端子138，各引脚或接触端子138包括内引脚130与对应的外引脚136。此外，第二蚀刻工艺更定义出承载器100的至少一芯片垫120。引脚138围绕芯片垫120，且芯片垫120通过第二开口S2电性绝缘于引脚138。一般而言，引脚138通过前述蚀刻工艺而彼此电性绝缘。举例来说，预切割开口Sc的深度与第二开口S2的深度的比约介于3∶8至1∶2之间。
假如基板在第二蚀刻工艺中并未被完全蚀穿或是可能残留的铜或是金属碎屑皆有可能导致接触短路或是其他的电性问题。然而，预切割工艺有助于减少残留的问题。由于预切割工艺在第二蚀刻工艺之前切入基板110预定深度，故可减少第二蚀刻工艺的蚀刻深度。换言之，预切割开口Sc可使第二蚀刻工艺的蚀穿基板110的蚀刻深度减少。这样，可确保第二蚀刻工艺可完全移除基板110的位于引脚138之间的部分，如此一来，引脚138可物理上的以及电性上的彼此独立。
之后，请参照图1I，进行切单工艺(singulation process)，以得到多个独立的先进四方扁平无引脚封装结构10。
详细而言，在本实施例中，预切割开口Sc可确保基板110在第二蚀刻工艺中被蚀穿且在第二蚀刻工艺之后引脚可彼此电性绝缘。因此，可加大工艺窗并可显著提升产品的可靠度。对于本实施例的先进四方扁平无引脚封装结构10而言，可减少于接触端子(或引脚)138之间的铜残留问题并提升封装产品的可靠度。
图2绘示本发明实施例的先进四方扁平无引脚封装结构的剖面图。请参照图2，在本实施例中，先进四方扁平无引脚封装结构20包括承载器200、芯片250、多条导线260与封装胶体280。
本实施例的承载器200例如为导线架。详细而言，承载器200包括芯片垫220与多个引脚(接触端子)238。引脚238包括多个内引脚230与多个外引脚236。图2绘示了多行/多列的接触端子238。详细而言，引脚238围绕着芯片垫220，且引脚238的材料可包括镍、金或钯(palladium)。封装胶体定义出内引脚与外引脚，也就是说，被封装胶体包覆的引脚是内引脚，而被封装胶体暴露出的引脚是外引脚。
再者，承载器200的芯片垫220还包括至少一接地环224。接地环224通过导线260电性连接至芯片250。由于接地环224连接芯片垫220，故接地环224与芯片垫220可作为接地平面。值得注意的是，相对于图2中的接地环224与芯片垫220，引脚238的位置、排列与数量仅用来举例而并非用以限定本发明。
此外，本实施例的先进四方扁平无引脚封装结构20的封装胶体280包覆芯片250、导线260、内引脚230并填满内引脚230之间的间隙，而暴露出外引脚236与芯片垫220的底面。封装胶体280的材料例如为环氧树脂或是其他适合的高分子材料。
对于前述实施例的先进四方扁平无引脚封装结构而言，是通过预切割工艺与蚀刻工艺制作外引脚，且之后的蚀刻工艺定义出外引脚，并使外引脚彼此独立。本实施例的先进四方扁平无引脚封装结构的产品可靠度较佳。
虽然本发明已以实施例披露如上，然其并非用以限定本发明，任何所属技术领域中普通技术人员，在不脱离本发明的精神和范围内，当可作些许的更动与润饰，故本发明的保护范围当视所附的权利要求所界定为准。

Claims (11)

1.一种四方扁平无引脚封装结构的制作方法，包括：
提供金属载板，该金属载板具有上表面与下表面，且该金属载板的该上表面配置有第一金属层，该金属载板的该下表面配置有第二金属层，并以该第一金属层为掩模进行第一蚀刻工艺图案化该金属载板的该上表面，以形成至少一容置凹槽与多个第一开口，以及通过预切割工艺图案化该金属载板的该下表面，以形成多个预切割开口；
提供芯片至该金属载板的该容置凹槽中；
形成多条连接于该芯片与该第一金属层之间的导线；
于该金属载板上形成封装胶体，以包覆该芯片、该多条导线与该第一金属层，并填满该容置凹槽与该多个第一开口；以及
以位于该金属载板的该下表面的该第二金属层为掩模，对该金属载板的该下表面进行第二蚀刻工艺，以通过蚀刻该多个预切割开口以及更蚀穿该金属载板直到填在该多个第一开口中的该封装胶体暴露出来的方式形成多个第二开口，从而形成多个引脚与芯片垫。
2.如权利要求1所述的四方扁平无引脚封装结构的制作方法，其中该第二蚀刻工艺为各向同性蚀刻工艺，且该第一蚀刻工艺为各向同性蚀刻工艺。
3.如权利要求2所述的四方扁平无引脚封装结构的制作方法，还包括：
在第一蚀刻工艺之后，对该金属载板的该上表面进行水刀工艺。
4.如权利要求1所述的四方扁平无引脚封装结构的制作方法，其中该预切割工艺为激光切割工艺、刀切工艺或电弧切割工艺。
5.如权利要求1所述的四方扁平无引脚封装结构的制作方法，其中该预切割开口的底部是平坦的或是U形的。
6.如权利要求1所述的四方扁平无引脚封装结构的制作方法，其中该预切割开口的深度为该金属载板的厚度的0.2倍至0.4倍。
7.如权利要求1所述的四方扁平无引脚封装结构的制作方法，其中该预切割开口的宽度为该多个第二开口的宽度的50％至100％。
8.如权利要求1所述的四方扁平无引脚封装结构的制作方法，其中该第一金属层与该第二金属层的形成方法包括电镀。
9.如权利要求1所述的四方扁平无引脚封装结构的制作方法，还包括：
在提供该芯片之前，在该容置凹槽中形成粘着层。
10.一种导线架的制作方法，包括：
提供金属载板，该金属载板具有上表面与下表面；
在该金属载板的该上表面与该下表面上分别形成第一金属层与第二金属层，且该第二金属层具有多个开口；
以该第一金属层为蚀刻掩模，对该金属载板的该上表面进行蚀刻工艺，以形成至少一容置凹槽与多个内引脚，多个位于该多个内引脚之间的第一开口定义出该多个内引脚，其中该蚀刻工艺为各向同性蚀刻工艺；
在该蚀刻工艺之后，对该金属载板的该上表面进行水刀工艺；以及
通过该多个开口对该金属载板的该下表面进行预切割工艺，以形成多个预切割开口。
11.一种导线架的制作方法，包括：
提供金属载板，该金属载板具有上表面与下表面；
在该金属载板的该上表面与该下表面上分别形成第一金属层与第二金属层，且该第二金属层具有多个开口；
以该第一金属层为蚀刻掩模，对该金属载板的该上表面进行蚀刻工艺，以形成至少一容置凹槽与多个内引脚，多个位于该多个内引脚之间的第一开口定义出该多个内引脚；以及
通过该多个开口对该金属载板的该下表面进行预切割工艺，以形成多个预切割开口，其中该预切割工艺为激光切割工艺、刀切工艺或电弧切割工艺。
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US20100258920A1 (en) 2010-10-14
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US8106492B2 (en) 2012-01-31
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