CN101910944B - 用于duv、muv和光学平版印刷的基于全受体取代的芳族阴离子的离子、有机光致产酸剂 - Google Patents
用于duv、muv和光学平版印刷的基于全受体取代的芳族阴离子的离子、有机光致产酸剂 Download PDFInfo
- Publication number
- CN101910944B CN101910944B CN2008801243662A CN200880124366A CN101910944B CN 101910944 B CN101910944 B CN 101910944B CN 2008801243662 A CN2008801243662 A CN 2008801243662A CN 200880124366 A CN200880124366 A CN 200880124366A CN 101910944 B CN101910944 B CN 101910944B
- Authority
- CN
- China
- Prior art keywords
- photo
- acid generator
- replace
- acid
- alkoxy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
Abstract
Description
Claims (20)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/970,731 | 2008-01-08 | ||
US11/970,731 US7655379B2 (en) | 2008-01-08 | 2008-01-08 | Ionic, organic photoacid generators for DUV, MUV and optical lithography based on peraceptor-substituted aromatic anions |
PCT/EP2008/067717 WO2009087027A2 (en) | 2008-01-08 | 2008-12-17 | Ionic, organic photoacid generators for duv, muv and optical lithography based on peraceptor-substituted aromatic anions |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101910944A CN101910944A (zh) | 2010-12-08 |
CN101910944B true CN101910944B (zh) | 2013-08-07 |
Family
ID=40626756
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008801243662A Expired - Fee Related CN101910944B (zh) | 2008-01-08 | 2008-12-17 | 用于duv、muv和光学平版印刷的基于全受体取代的芳族阴离子的离子、有机光致产酸剂 |
Country Status (8)
Country | Link |
---|---|
US (1) | US7655379B2 (zh) |
EP (1) | EP2240829B1 (zh) |
JP (1) | JP5308454B2 (zh) |
KR (1) | KR101320273B1 (zh) |
CN (1) | CN101910944B (zh) |
AT (1) | ATE509299T1 (zh) |
TW (1) | TWI434136B (zh) |
WO (1) | WO2009087027A2 (zh) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8039194B2 (en) * | 2008-01-08 | 2011-10-18 | Internatinal Business Machines Corporation | Photoacid generators for extreme ultraviolet lithography |
US8034533B2 (en) * | 2008-01-16 | 2011-10-11 | International Business Machines Corporation | Fluorine-free heteroaromatic photoacid generators and photoresist compositions containing the same |
US8343706B2 (en) | 2010-01-25 | 2013-01-01 | International Business Machines Corporation | Fluorine-free fused ring heteroaromatic photoacid generators and resist compositions containing the same |
US10014261B2 (en) * | 2012-10-15 | 2018-07-03 | Palo Alto Research Center Incorporated | Microchip charge patterning |
KR101988931B1 (ko) * | 2012-12-31 | 2019-09-30 | 동우 화인켐 주식회사 | 감광성 수지 조성물 및 이로부터 제조되는 절연막 |
TWI662364B (zh) * | 2015-12-31 | 2019-06-11 | Rohm And Haas Electronic Materials Llc | 光致抗蝕劑組合物、包含光致抗蝕劑組合物的經塗佈基板及形成電子裝置的方法 |
TWI619699B (zh) | 2015-12-31 | 2018-04-01 | Rohm And Haas Electronic Materials Llc | 光酸產生劑 |
KR20190095307A (ko) | 2016-12-21 | 2019-08-14 | 도요 고세이 고교 가부시키가이샤 | 감광성 화합물, 상기 감광성 화합물을 함유하는 광산 발생제 및 레지스트 조성물, 및 상기 레지스트 조성물을 이용한 디바이스의 제조 방법 |
US11127592B2 (en) * | 2018-05-31 | 2021-09-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Photosensitive groups in resist layer |
US11852972B2 (en) * | 2020-10-30 | 2023-12-26 | Rohm And Haas Electronic Materials Llc | Photoresist compositions and pattern formation methods |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3853943A (en) * | 1967-10-27 | 1974-12-10 | Du Pont | Cyclopentadienes in which at least four of the ring carbons carry cyano substituents and methods for their preparation |
US6093753A (en) * | 1995-08-22 | 2000-07-25 | Nippon Soda Co., Ltd. | Sulfonium salt compounds, polymerization initiator, curable composition and curing method |
CN1274433A (zh) * | 1998-08-07 | 2000-11-22 | 克拉瑞特国际有限公司 | 含有鎓盐型光敏酸发生剂的化学增强辐射敏感组合物 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE60234409D1 (de) | 2001-06-29 | 2009-12-31 | Jsr Corp | Säuregenerator, Sulfonsäure, Sulfonsäurederivate und strahlungsempfindliche Zusammensetzung |
US7217492B2 (en) | 2002-12-25 | 2007-05-15 | Jsr Corporation | Onium salt compound and radiation-sensitive resin composition |
US7192686B2 (en) | 2004-03-31 | 2007-03-20 | Intel Corporation | Photoacid generators based on novel superacids |
-
2008
- 2008-01-08 US US11/970,731 patent/US7655379B2/en not_active Expired - Fee Related
- 2008-12-17 EP EP08870322A patent/EP2240829B1/en not_active Not-in-force
- 2008-12-17 WO PCT/EP2008/067717 patent/WO2009087027A2/en active Application Filing
- 2008-12-17 CN CN2008801243662A patent/CN101910944B/zh not_active Expired - Fee Related
- 2008-12-17 JP JP2010541045A patent/JP5308454B2/ja not_active Expired - Fee Related
- 2008-12-17 KR KR1020107014376A patent/KR101320273B1/ko not_active IP Right Cessation
- 2008-12-17 AT AT08870322T patent/ATE509299T1/de not_active IP Right Cessation
-
2009
- 2009-01-05 TW TW098100126A patent/TWI434136B/zh not_active IP Right Cessation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3853943A (en) * | 1967-10-27 | 1974-12-10 | Du Pont | Cyclopentadienes in which at least four of the ring carbons carry cyano substituents and methods for their preparation |
US6093753A (en) * | 1995-08-22 | 2000-07-25 | Nippon Soda Co., Ltd. | Sulfonium salt compounds, polymerization initiator, curable composition and curing method |
CN1274433A (zh) * | 1998-08-07 | 2000-11-22 | 克拉瑞特国际有限公司 | 含有鎓盐型光敏酸发生剂的化学增强辐射敏感组合物 |
Also Published As
Publication number | Publication date |
---|---|
US20090176173A1 (en) | 2009-07-09 |
US7655379B2 (en) | 2010-02-02 |
ATE509299T1 (de) | 2011-05-15 |
JP5308454B2 (ja) | 2013-10-09 |
WO2009087027A3 (en) | 2009-11-05 |
KR101320273B1 (ko) | 2013-10-30 |
EP2240829A2 (en) | 2010-10-20 |
CN101910944A (zh) | 2010-12-08 |
KR20100099223A (ko) | 2010-09-10 |
EP2240829B1 (en) | 2011-05-11 |
WO2009087027A2 (en) | 2009-07-16 |
TW200949434A (en) | 2009-12-01 |
JP2011510109A (ja) | 2011-03-31 |
TWI434136B (zh) | 2014-04-11 |
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Effective date of registration: 20171114 Address after: Grand Cayman, Cayman Islands Patentee after: GLOBALFOUNDRIES INC. Address before: American New York Patentee before: Core USA second LLC Effective date of registration: 20171114 Address after: American New York Patentee after: Core USA second LLC Address before: American New York Patentee before: International Business Machines Corp. |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130807 Termination date: 20191217 |
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CF01 | Termination of patent right due to non-payment of annual fee |