CN101930928B - Manufacturing method of thin base plate for packaging semiconductor - Google Patents
Manufacturing method of thin base plate for packaging semiconductor Download PDFInfo
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- CN101930928B CN101930928B CN2009100539425A CN200910053942A CN101930928B CN 101930928 B CN101930928 B CN 101930928B CN 2009100539425 A CN2009100539425 A CN 2009100539425A CN 200910053942 A CN200910053942 A CN 200910053942A CN 101930928 B CN101930928 B CN 101930928B
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Abstract
The invention discloses a manufacturing method of a thin base plate for packaging a semiconductor, comprising the following steps of: firstly providing a thin base plate with the thickness not greater than 0.2 millimeter, wherein an invalid border area is arranged around the thin base plate and surrounds at least one valid block; then forming a thickened strengthening frame strip on the invalid border area by adopting an electroplating or etching process together with a photoresist; and removing a photoresist layer to obtain the thin base plate with the strengthening frame strip, thereby improving the bending resistance of the thin base plate.
Description
[technical field]
The invention relates to a kind of manufacturing approach of thin base plate for packaging semiconductor, particularly relevant for a kind of manufacturing approach that improves the thin base plate for packaging semiconductor of bending resistance.
[background technology]
Now; The semiconductor packages industry develops the packaging structure that various different types gradually in order to satisfy the demand of various high-density packages, and wherein common packaging structure with substrate (substrate) comprises ball grid array packaging structure (ball grid array; BGA), pin array packaging structure (pin grid array; PGA), the crosspoint array packaging structure (land grid array, chip encapsulation construction LGA) or on the substrate (board on chip, BOC) etc.In above-mentioned packaging structure, a upper surface of said substrate carries at least one chip, and several connection pads of chip is electrically connected to several weld pads of the upper surface of said substrate through routing (wire bonding) or projection (bumping) manufacture process.Simultaneously, a lower surface of said substrate also must provide a large amount of weld pads, to weld several outputs.Said substrate can be the printed circuit board (PCB) of single or multiple lift; It is except providing the surface circuit layer to form the required weld pad on upper and lower surface; Its inside also have at least one in circuit layer and several vias, with the annexation of the weld pad of rearranging upper and lower surface.Moreover, in order to satisfy the demand of various small-sized high density encapsulation, therefore how to make the thinner thin base plate for packaging of thickness, also be an important key technology of encapsulation industry.
Traditionally, thin base is meant that thickness of slab is not more than the substrate of 0.2mm, and wherein the thickness of slab of ultra-thin substrate then is not more than 0.1mm.Yet, because thickness of slab is too thin, the restriction of the levelling line when adding the board conveying substrate (horizontal) ability, thin base tends to run into that bow warping (warpage), sheet material are broken, sheet material snaps in the medium problem of board roller.Therefore, if be to make thin base only, certainly will cause the massive losses and the warpage degree of the yields (yield) of thin base to surpass preassigned according to the manufacture method of traditional slab.Simultaneously, thin base is difficult to also guarantee that thin base is not because of rocking or external force collision damages in a dead lift process.According to statistics, the thin base yields loss that causes owing to above shortcoming can reach about 30%.Therefore, the manufacturing technology of exploitation thin base becomes relative reduction packaging cost, promotes the necessary problem of the market competitiveness.
[summary of the invention]
Main purpose of the present invention is to provide a kind of manufacturing approach of thin base plate for packaging semiconductor; Wherein the invalid border area around sheet material utilizes plating or etching mode to form the Strengthening Moulding of thickening at least; To utilize Strengthening Moulding to improve the bending resistance of thin base; And then reduce the broken or clamp equivalent risk of warpage, plate of sheet material, with the yields of relative lifting thin base and reduce manufacturing cost.
Secondary objective of the present invention is to provide a kind of manufacturing approach of thin base plate for packaging semiconductor; Wherein the invalid bonding pad of sheet material between adjacent effective block forms the reinforcement rib of thickening in addition; Strengthen the Strengthening Moulding that rib is connected in invalid border area; Thereby can further improve bending resistance, reduce warpage, plate is broken or the clamp equivalent risk, with the yields of further lifting thin base and reduce manufacturing cost.
For reaching aforementioned purpose of the present invention; The present invention provides a kind of manufacturing approach of thin base plate for packaging semiconductor; It is characterized in that: said manufacturing approach comprises step: a thin base is provided; Have an invalid border area around the said thin base, said invalid border area is around to a few effective block; Form a photoresist layer (photoresist layer) and be covered on the said effective block, and a metal surface in exposed said invalid border area; The Strengthening Moulding of electroplating formation one thickening is on the metal surface in said invalid border area; And, remove said photoresist layer.
In one embodiment of this invention, two surfaces of said thin base form said Strengthening Moulding respectively.
In one embodiment of this invention, the kenel of said Strengthening Moulding is continuous or discontinuous.
In one embodiment of this invention, the thickness of said Strengthening Moulding is between 20 to 100 microns (um).
In one embodiment of this invention, said thin base comprises at least two said effective blocks, and comprises at least one invalid bonding pad in addition between each two adjacent said effective block; One metal surface of the in addition exposed said invalid bonding pad of wherein said photoresist layer, and the reinforcement rib of plating formation one thickening in addition is on the metal surface of said invalid bonding pad.
In one embodiment of this invention, two surfaces of said thin base form said reinforcement rib respectively.
In one embodiment of this invention, the thickness of said reinforcement rib is between 20 to 100 microns (um).
In one embodiment of this invention, said photoresist layer is a photoresist dry film (dry film).
In one embodiment of this invention, after removing the step of said photoresist layer, other comprises: remove said invalid border area and on said Strengthening Moulding, to isolate at least one said effective block; And, at least one chip is fixed on the said effective block.
In one embodiment of this invention, utilize cutter cutting or punch ram remove said invalid border area and on said Strengthening Moulding.
In one embodiment of this invention, said thin base comprises an insulation sandwich layer and at least two conductive metal layers.
In one embodiment of this invention, said thin base only comprises an at least one insulation sandwich layer and a conductive metal layer.
In one embodiment of this invention, said substrate thickness is not more than 0.2 millimeter.
In one embodiment of this invention, after providing before the said thin base or removing said photoresist layer, other comprises the program of a circuit patternization, is circuit pattern will the conductive metal layer in the effective block of said thin base to be patterned to.
In one embodiment of this invention, after the step of removing said photoresist layer, other comprises: at least one chip is fixed on each said effective block; And, cutting remove said invalid border area and on said Strengthening Moulding, to isolate at least one said effective block.
Moreover; The present invention provides the manufacturing approach of another kind of thin base plate for packaging semiconductor; It is characterized in that: said manufacturing approach comprises step: a thin base is provided; Have an invalid border area around the said thin base, said invalid border area is coated with the reinforced metal layer of a thickening around to a few effective block on said invalid border area and the effective block; Form on the reinforced metal layer that a photoresist layer is covered in said invalid border area, and the reinforced metal layer on the exposed said effective block; Said exposed reinforced metal layer is removed in etching, makes the Strengthening Moulding of at least one thickening of remaining reinforced metal layer definition formation on the said invalid border area; And, remove said photoresist layer.
In one embodiment of this invention, said thin base comprises at least two said effective blocks, and comprises at least one invalid bonding pad in addition between each two adjacent said effective block, is coated with said reinforced metal layer on the said invalid bonding pad; Wherein said photoresist layer covers the reinforced metal layer of said invalid bonding pad in addition, and removes in the step of said exposed reinforced metal layer reinforcement rib that also etching forms at least one thickening on said invalid bonding pad in etching.
In one embodiment of this invention; After reinforced metal layer exposed on the said effective block is removed in etching; Other comprises the program of a circuit patternization, and being patterned to the conductive metal layer with the said thin base that exposes on the said effective block is circuit pattern.
[description of drawings]
Figure 1A, 1B, 1C, 1D, 1E and 1F are the schematic flow sheets of the manufacturing approach of first embodiment of the invention thin base plate for packaging semiconductor.
Fig. 2 A, 2B, 2C, 2D, 2E and 2F are the schematic flow sheets of the manufacturing approach of second embodiment of the invention thin base plate for packaging semiconductor.
Fig. 3 A and 3B are the sketch mapes of third embodiment of the invention thin base plate for packaging semiconductor.
[embodiment]
For making above-mentioned purpose of the present invention, characteristic and advantage more obviously understandable, hereinafter is special lifts preferred embodiment of the present invention, and conjunction with figs., elaborates as follows:
Please with reference to shown in Figure 1A to 1D; The manufacturing approach of the thin base plate for packaging semiconductor of first embodiment of the invention mainly comprises the following step: a thin base 1 is provided; Its thickness is not more than 0.2 millimeter (mm); And have an invalid border area A around the said thin base 1, said invalid border area A is around at least one effective block B; Form a photoresist layer (photoresist layer) 2 and be covered on the said effective block B, and the metal surface of exposed said invalid border area A; The Strengthening Moulding 3 of electroplating formation one thickening is on the metal surface of said invalid border area A; And, remove said photoresist layer 2.
Please with reference to shown in Figure 1A and the 1B; The manufacturing approach first step of the thin base plate for packaging semiconductor of first embodiment of the invention is: a thin base 1 is provided; Its thickness is not more than 0.2 millimeter; And have an invalid border area A around the said thin base 1, said invalid border area A is around at least one effective block B.In this step; Said thin base 1 refers to thickness and is not more than 0.2 millimeter base plate for packaging; It comprises an insulation sandwich layer 10 and at least two conductive metal layers 11; Or only comprising an at least one insulation sandwich layer 10 and a conductive metal layer 11, the material of wherein said insulation sandwich layer 10 can be selected from glass fiber, epoxy resin, polyimides (polyimide), other equivalence insulation material or its combinations; The material of said conductive metal layer 11 can be selected from copper, gold, silver, aluminium, nickel, other equivalent metals or its alloy.Moreover; Said invalid border area A is meant a trough of the edge of said thin base 1; Roughly corresponding to the profile of said thin base 1, the conductive metal layer 11 in said invalid border area A can not be formed with the circuit pattern of circuit function to the annular shape of said invalid border area A.Said effective block B is meant the sheet material zone that centered on by said invalid border area A, and the conductive metal layer 11 in said effective block B will be formed with the circuit pattern of circuit function.Said conductive metal layer 11 can be chosen in the embodiment of the present invention method provides a thin base 1 just to carry out the program of a circuit patternization in advance before; Form circuit pattern (not illustrating) with definition; Or also can be chosen in and accomplish the inventive method and remove the program of carrying out a circuit patternization after the said photoresist layer 2 again, form circuit pattern (not illustrating) with definition.In addition, the width of the thickness of the thickness of said insulation sandwich layer 10, said conductive metal layer 11 and said invalid border area A can be adjusted according to the length and width size of said thin base 1.For example; When the length and width of said thin base 1 are of a size of 510 * 405 millimeters (mm); The thickness that the thickness of said insulation sandwich layer 10 preferably is about 50 microns (um), said conductive metal layer 11 preferably is about 12 microns, and the width of said invalid border area A preferably is about 10 millimeters.When the length and width of said thin base 1 are of a size of 610 * 510 millimeters; The thickness of said insulation sandwich layer 10 preferably is about 100 microns, the thickness of said conductive metal layer 11 and preferably is about 12 microns; The width that reaches said invalid border area A preferably is about 10 millimeters, but is not limited to this.
Please with reference to shown in Fig. 1 C and the 1D; Manufacturing approach second step of the thin base plate for packaging semiconductor of first embodiment of the invention is: forms a photoresist layer (photoresist layer) 2 and is covered on the said effective block B, and the metal surface of exposed said invalid border area A.In this step; After the present invention can select to utilize the liquid photoresist of coating; Through the program of exposure and development,, be covered on the said effective block B again to form said photoresist layer 2; And the metal surface of exposed said invalid border area A, wherein said liquid photoresist is optional from minus or eurymeric photoresist.In another embodiment, said photoresist layer 2 also can be selected from a prefabricated photoresist dry film (dry film), and its mode of pasting capable of using directly is attached on the said thin base 1, and is same again through the exposure and the program of developing, to form said photoresist layer 2.What be worth to annotate is, said thin base 1 forms said photoresist layer 2 on the conductive metal layer 11 on a surface therein, but preferably on the conductive metal layer 11 on two surfaces, all forms said photoresist layer 2.
Please with reference to shown in Fig. 1 E, the manufacturing approach third step of the thin base plate for packaging semiconductor of first embodiment of the invention is: the Strengthening Moulding 3 of electroplating formation one thickening is on the metal surface of said invalid border area A.In this step; When said thin base 1 all forms said photoresist layer 2 on the conductive metal layer 11 on two surfaces; Directly said thin base 1 is immersed in the electroplate liquid and electroplates, with the Strengthening Moulding 3 that forms a thickening on the metal surface of the conductive metal layer 11 of said invalid border area A.Perhaps; When said thin base 1 only forms said photoresist layer 2 therein on the conductive metal layer 11 on a surface; Utilize a protective layer (not illustrating) to be attached on another surperficial conductive metal layer 11 of said thin base 1 earlier; Again said thin base 1 is immersed in the electroplate liquid and electroplates so that only therein a surface form the Strengthening Moulding 3 of a thickening, after plating, remove said protective layer again.In the present invention, the thickness of said Strengthening Moulding 3 preferably is controlled between 20 to 100 microns (um), particularly between 20 to 30 microns (um).The material of said Strengthening Moulding 3 can be same or different from the material of said conductive metal layer 11, and the material of for example said Strengthening Moulding 3 can be selected from copper, gold, silver, aluminium, nickel, other equivalent metals or its alloy.The kenel of said Strengthening Moulding 3 can be continuous or discontinuous.
Please with reference to shown in Fig. 1 F, manufacturing approach the 4th step of the thin base plate for packaging semiconductor of first embodiment of the invention is: remove said photoresist layer 2.In this step, the said photoresist layer 2 of existing PROCESS FOR TREATMENT such as utilize chemical stripping or remove is to remove said photoresist layer 2.After accomplishing above-mentioned steps, can obtain having the thin base 1 of said Strengthening Moulding 3.The present invention can select further to be applied in the various semiconductor packaging process after the step of removing said photoresist layer.For example, can select to carry out following step in addition: transport thin base 1 with said Strengthening Moulding 3; Utilize cutter cutting or punch ram (punch) remove said invalid border area A and on said Strengthening Moulding 3, to isolate at least one said effective block B; And, at least one chip (not illustrating) is fixed on the said effective block B, and then carries out routing (or Reflow Soldering) and sealing supervisor.Perhaps, select to carry out following step: transport thin base 1 with said Strengthening Moulding 3; At least one chip (not illustrating) is fixed on each said effective block B, and then carries out routing (or Reflow Soldering) and sealing supervisor; And, utilize cutter cutting or punch ram (punch) remove said invalid border area A and on said Strengthening Moulding 3, to isolate at least one said effective block B.
Please with reference to shown in Fig. 2 A, 2B, 2C, 2D, 2E and the 2F; The manufacturing approach of the thin base plate for packaging semiconductor of second embodiment of the invention is similar in appearance to first embodiment of the invention; But the difference characteristic of second embodiment is: first embodiment adopts electroplating technology, and second embodiment adopts etch process, and wherein the manufacturing approach of second embodiment mainly comprises the following step: a thin base 1 is provided; Its thickness is not more than 0.2 millimeter (mm); And have an invalid border area A around the said thin base 1, said invalid border area A is coated with the reinforced metal layer 12 of a thickening around at least one effective block B on said invalid border area A and the effective block B; Form a photoresist layer (photoresist layer) 2 and be covered on the reinforced metal layer 12 of said invalid border area A, and the reinforced metal layer 12 on the exposed said effective block B; Said exposed reinforced metal layer 12 is removed in etching, makes said invalid border area A go up the Strengthening Moulding 3 of at least one thickening of remaining reinforced metal layer 12 definition formation; And, remove said photoresist layer 2.The thickness of above-mentioned reinforced metal layer 12 (being said Strengthening Moulding 3) preferably is controlled between 20 to 100 microns (um), particularly between 20 to 30 microns (um).The material of said reinforced metal layer 12 (being said Strengthening Moulding 3) can be same or different from the material of said conductive metal layer 11, for example can be selected from copper, gold, silver, aluminium, nickel, other equivalent metals or its alloy.Said reinforced metal layer 12 can be to electroplate in addition to be formed on another metal material layer on the said conductive metal layer 11, or also possibly be directly to form by forming 11 definition of thicker said conductive metal layer.After reinforced metal layer 12 exposed on the said effective block B was removed in etching, other comprised the program of a circuit patternization, so that the said conductive metal layer that exposes on the said effective block B 11 definition are formed circuit pattern.Perhaps; Said conductive metal layer 11 can be chosen in the embodiment of the present invention method provides a thin base 1 just to carry out the program of a circuit patternization in advance before; Form circuit pattern (not illustrating) with definition; Or also can be chosen in and accomplish the inventive method and remove the program of carrying out a circuit patternization after the said photoresist layer 2 again, form circuit pattern (not illustrating) with definition.
Please with reference to shown in Fig. 3 A and the 3B; The manufacturing approach of the thin base plate for packaging semiconductor of third embodiment of the invention is similar in appearance to the first embodiment of the invention or second embodiment; But the difference characteristic of the 3rd embodiment is: when the 3rd embodiment uses the method for first embodiment of the invention; In first step, said thin base 1 comprises at least two said effective block B, and comprises at least one invalid bonding pad C in addition between each two adjacent said effective block B; In second step, a metal surface of the conductive metal layer 11 of said photoresist layer 2 in addition exposed said invalid bonding pad C; In third step, the reinforcement rib 31 of electroplating formation one thickening in addition is on the metal surface of the conductive metal layer 11 of said invalid bonding pad C.Perhaps; When the 3rd embodiment uses the method for second embodiment of the invention; In first step; Said thin base 1 comprises at least two said effective block B, and comprises at least one invalid bonding pad C in addition between each two adjacent said effective block B, is coated with said reinforced metal layer 12 on the said invalid bonding pad C; In second step, said photoresist layer 2 covers the reinforced metal layer 12 of said invalid bonding pad C in addition; Remove in the third step of said exposed reinforced metal layer in etching, also etching makes said invalid bonding pad C go up the reinforcement rib 31 of at least one thickening of remaining reinforced metal layer 12 definition formation.In a second embodiment, said thin base 1 can be selected the said reinforcement rib 31 of a surface formation therein, or forms said reinforcement rib 31 respectively on two surfaces.Said reinforcement rib 31 is connected in the Strengthening Moulding 31 of said invalid border area A, to distinguish at a distance from each said effective block B.The thickness of above-mentioned reinforcement rib 31 preferably is controlled between 20 to 100 microns (um), particularly between 20 to 30 microns (um).The material of said reinforcement rib 31 can be same or different from the material of said Strengthening Moulding 3, for example can be selected from copper, gold, silver, aluminium, nickel, other equivalent metals or its alloy.
As stated; Compared to existing thin base be everlasting carry and the course of processing in take place that bow warping, sheet material are broken, sheet material snaps in the medium problem of board roller; And cause the loss of yields and warpage degree to surpass shortcomings such as preassigned; The present invention of Figure 1A to 2F is through utilize plating or etching mode to form the Strengthening Moulding 3 of said thickening at said thin base 1 invalid border area A all around at least; Utilizing said Strengthening Moulding 3 to improve the bending resistance of said thin base 1, it helps reducing the broken or clamp equivalent risk of warpage, plate of sheet material really, with the yields of the said thin base 1 of relative lifting and reduce the manufacturing cost of said thin base 1.Moreover; Shown in Fig. 3 A and 3B; The invalid bonding pad C of said thin base 1 between adjacent effective block B can select to form the reinforcement rib 31 of said thickening in addition; Said reinforcement rib 31 is connected in the Strengthening Moulding 3 of said invalid border area A, thus can further improve the bending resistance of said thin base 1, the warpage that reduces sheet material, plate is broken or the clamp equivalent risk, with the yields of the said thin base 1 of further lifting and reduce the manufacturing cost of said thin base 1.In addition, when said thin base 1 carried out etching formation circuit pattern in etching solution, above-mentioned Strengthening Moulding 3 (and strengthening rib 31) also can increase the anti-jet flow ability of said thin base 1.
The present invention is described by above-mentioned related embodiment, yet the foregoing description is merely the example of embodiment of the present invention.Must be pointed out that disclosed embodiment does not limit scope of the present invention.On the contrary, being contained in the spirit of claims and the modification and impartial setting of scope includes in scope of the present invention.
Claims (14)
1. the manufacturing approach of a thin base plate for packaging semiconductor, it is characterized in that: said manufacturing approach comprises step:
One thin base is provided, has an invalid border area around the said thin base, said invalid border area is around to a few effective block;
Form a photoresist layer and be covered on the said effective block, and a metal surface in exposed said invalid border area;
The Strengthening Moulding of electroplating formation one thickening is on the metal surface in said invalid border area; And
Remove said photoresist layer.
2. the manufacturing approach of a thin base plate for packaging semiconductor, it is characterized in that: said manufacturing approach comprises step:
One thin base is provided, has an invalid border area around the said thin base, said invalid border area is coated with the reinforced metal layer of a thickening around to a few effective block on said invalid border area and the effective block;
Form on the reinforced metal layer that a photoresist layer is covered in said invalid border area, and the reinforced metal layer on the exposed said effective block;
Said exposed reinforced metal layer is removed in etching, makes the Strengthening Moulding of at least one thickening of remaining reinforced metal layer definition formation on the said invalid border area; And
Remove said photoresist layer.
3. according to claim 1 or claim 2 the manufacturing approach of thin base plate for packaging semiconductor, it is characterized in that: two surfaces of said thin base form said Strengthening Moulding respectively.
4. according to claim 1 or claim 2 the manufacturing approach of thin base plate for packaging semiconductor is characterized in that: the kenel of said Strengthening Moulding is continuous or discontinuous.
5. according to claim 1 or claim 2 the manufacturing approach of thin base plate for packaging semiconductor, it is characterized in that: the thickness of said Strengthening Moulding is between 20 to 100 microns.
6. the manufacturing approach of thin base plate for packaging semiconductor as claimed in claim 1, it is characterized in that: said thin base comprises at least two said effective blocks, and comprises at least one invalid bonding pad in addition between each two adjacent said effective block; One metal surface of the in addition exposed said invalid bonding pad of wherein said photoresist layer, and the reinforcement rib of plating formation one thickening in addition is on the metal surface of said invalid bonding pad.
7. according to claim 1 or claim 2 the manufacturing approach of thin base plate for packaging semiconductor; It is characterized in that: after the step of removing said photoresist layer; Other comprises: remove said invalid border area and on said Strengthening Moulding, to isolate at least one said effective block.
8. the manufacturing approach of thin base plate for packaging semiconductor as claimed in claim 7 is characterized in that: utilize cutter cutting or punch ram remove said invalid border area and on said Strengthening Moulding.
9. according to claim 1 or claim 2 the manufacturing approach of thin base plate for packaging semiconductor, it is characterized in that: said thin base comprises an insulation sandwich layer and at least two conductive metal layers.
10. according to claim 1 or claim 2 the manufacturing approach of thin base plate for packaging semiconductor, it is characterized in that: said thin base only comprises an at least one insulation sandwich layer and a conductive metal layer.
11. the manufacturing approach of thin base plate for packaging semiconductor according to claim 1 or claim 2 is characterized in that: said thin base thickness is not more than 0.2 millimeter.
12. the manufacturing approach of thin base plate for packaging semiconductor as claimed in claim 1; It is characterized in that: before said thin base is provided or after removing said photoresist layer; Other comprises the program of a circuit patternization, is circuit pattern will the conductive metal layer in the effective block of said thin base to be patterned to.
13. the manufacturing approach of thin base plate for packaging semiconductor as claimed in claim 2; It is characterized in that: after reinforced metal layer exposed on the said effective block is removed in etching; Other comprises the program of a circuit patternization, and being patterned to the conductive metal layer with the said thin base that exposes on the said effective block is circuit pattern.
14. the manufacturing approach of thin base plate for packaging semiconductor as claimed in claim 2; It is characterized in that: said thin base comprises at least two said effective blocks; And comprise at least one invalid bonding pad in addition between each two adjacent said effective block, be coated with said reinforced metal layer on the said invalid bonding pad; Wherein said photoresist layer covers the reinforced metal layer of said invalid bonding pad in addition, and removes in the step of said exposed reinforced metal layer reinforcement rib that also etching forms at least one thickening on said invalid bonding pad in etching.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7323642B2 (en) * | 2003-07-16 | 2008-01-29 | Samsung Electronics Co., Ltd. | Thin printed circuit board for manufacturing chip scale package |
| CN101261967A (en) * | 2008-04-29 | 2008-09-10 | 日月光半导体制造股份有限公司 | Enhanced encapsulation carrier board and its making method |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7323642B2 (en) * | 2003-07-16 | 2008-01-29 | Samsung Electronics Co., Ltd. | Thin printed circuit board for manufacturing chip scale package |
| CN101261967A (en) * | 2008-04-29 | 2008-09-10 | 日月光半导体制造股份有限公司 | Enhanced encapsulation carrier board and its making method |
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