CN1019720B - 半导体功率器件 - Google Patents

半导体功率器件

Info

Publication number
CN1019720B
CN1019720B CN91101845A CN91101845A CN1019720B CN 1019720 B CN1019720 B CN 1019720B CN 91101845 A CN91101845 A CN 91101845A CN 91101845 A CN91101845 A CN 91101845A CN 1019720 B CN1019720 B CN 1019720B
Authority
CN
China
Prior art keywords
district
buffer layer
compound buffer
withstand voltage
semiconductor power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CN91101845A
Other languages
English (en)
Other versions
CN1056018A (zh
Inventor
陈星弼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
3d Semiconductor Ltd By Share Ltd
Original Assignee
University of Electronic Science and Technology of China
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=4905301&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=CN1019720(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by University of Electronic Science and Technology of China filed Critical University of Electronic Science and Technology of China
Priority to CN91101845A priority Critical patent/CN1019720B/zh
Priority to US07/761,407 priority patent/US5216275A/en
Publication of CN1056018A publication Critical patent/CN1056018A/zh
Publication of CN1019720B publication Critical patent/CN1019720B/zh
Expired legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/063—Reduced surface field [RESURF] pn-junction structures
    • H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391—Gated diode structures
    • H01L29/7392—Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642—Isolation within the component, i.e. internal isolation
    • H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642—Isolation within the component, i.e. internal isolation
    • H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
    • H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs

Abstract

含有一个P+区与n+区之间的耐压区的半导体功率器件，其特性是用包括有二种导电类型的材料相间排列组成的复合缓冲层(CB层)的耐压区代替了以往的一种导电类型的耐压区。本发明还提供了复合缓冲层不同图形的设计规范。采用本发明可以得到性能优良的各类新结构的半导体功率器件。器件单位面积的导通电阻与击穿电压的关系为Ron∝V1.3。所以采用本发明在改善导通电阻Ron(或正向正降)与器件耐压的矛盾方面有了重要突破。

Description

该发明属于半导体功率器件技术领域。
众所周之，现有半导体功率器件的耐压是靠一层较轻掺杂的单一导电类型的半导体材料（可以是外延或其它技术制成），这里称它为耐压区。对于高压功率器件，导通电阻（或正向压降）主要是由这耐压区决定。耐压区的耐压能力与它的掺杂浓度及厚度有关，浓度愈低，厚度愈大，则耐压愈高，但是导通电阻（或正向压降）则愈大。耐压高与导通电阻（或正向压降）小是功率器件的主要矛盾。例如，功率MOSFET中目前技术最先进的是RMOS（或称UMOS），其结构示意图见图1，它的耐压区是一层n-外延层，其单位面积导通电阻Ron∝V2.5 B，VB为器件所需的耐压，也就是n-外延层所需的最小耐压能力。功率MOSFET的耐压与导通电阻的关系见参考资料：（1）C.F.Wheatley，G.M.Dolny，Solid-State Technology，Nov.1985，PP.121-128;（2）C.Hu，IEEE Trans.Electron Devices，Vol.ED-26，No.3，PP.243-246（1979）;（3）D.Ueda，H.Takagi，G.Hano，IEEE Trans.Electron Devices，Vol.ED-34，PP.926-930（1987）;（4）H.R.Chang，R.D.Black et al.，IEEE Trans.Electron Devices，Vol.ED-34，PP.2329-2333（1987）。另外，有一美国专利：（5）Goodman et al.，United States Patent，4，366495，Dec.28，1982，在VDMOS的导通电阻Ron的改善方面有了进展，但是，没有超出极限关系Ron∝V2.5 B。当要求VB增加时，n-外延层掺杂浓度要降低、厚度要增加，则Ron随VB以2.5次方上升，这在高压 功率领域是很不利的。另一方面，纵向导电型功率器件的耐压区中，总有相间的区域对导电几乎没有贡献。例如，垂直导电的功率MOSFET的源极下方的区域;双极型晶体管的基极电极条下方的区域等。
本发明的任务在于提供一种新型结构的耐压区（这里称复合缓冲层：Com-posite    Buffer，缩写CB），在CB层上再制作功率器件，这样可以得到性能更优良的各类功率器件，其耐压与导通电阻的极限关系建立在一个新的基础上，可以大大缓解导通电阻（或正向压降）与器件耐压的矛盾。
依据发明的任务，本发明提供了新结构的耐压区，它是用包括有两种导电类型的材料相间排列组成的复合缓冲层（CB层）的耐压区代替以往的一种导电类型的耐压区。即在p+区相接的平面与n+区界面之间有p区与n区交替组合而成的复合缓冲层，复合缓冲层中的每个p区与每个n区均有与上述两个面相交的交接面，除这两个交接面外，复合缓冲层的每个p区被相邻的n区包围，每个n区被相邻的p区包围，如图2所示。这样，在CB层耗尽时，两种导电类型的材料（p区和n区），提供符号相反的电荷，其产生的电场大部分被互相抵消，这就使得p区及n区的掺杂浓度可高于通常的耐压区，而其导通电阻低于通常的耐压区。
CB层的p区与n区的安排方式称为其结构图形。这种图形可以是：1）条状，即叉指式，在CB层的横截面上，每个长条状n区的两旁是p区，反之亦然;2）六角形单元或方形单元或长方形单元或三角形单元的并接，在CB层的横截面上六角形或方形或长方形或三角形单元实行密堆集，每个单元的中央是圆形，或六角形，或方形，或长方形，或三角形的n区（或p区），其它部分是p区（或n区）;3）镶嵌式，在CB层的横截面上，p区及n区都是方形，或都是正三角形，或都是正六角形，p区与n区间隔排列。图3示意地示出这三种图形的 各一个例子。在各种图形中，p区及n区的尺寸（宽度或半径）愈小，则导通电阻愈低。而且各p区及各n区面积应近于相等，以得到最小的导通电阻。
本发明提供CB层的设计方法如下：如果要求耐压为VB〔伏〕，则CB层的厚度应为0.024V1.2 B〔微米〕。对于条状图形，当n区及p区的宽度相等为b〔微米〕;n区的有效施主浓度及p区的有效受主浓度均为7.2×1016·V-0.2 B/b[厘米-3]。对于方形镶嵌式结构图形，如每区的宽度为b[微米〕，则n区的有效施主浓度及p区的有效受主浓度均为9.1×1016·V-0.2 B/b〔厘米-3〕。对于其它图形，当每个n区及每个p区面积相等为A〔微米2〕时，有效施主及有效受主浓度为8.7×1016·V-0.2 B/√A。
本发明提供的上述浓度设计规则是为了得到最低的单位面积导通电阻Ron对条状图形，这时Ron＝6×10-7·b·V1.3 B〔欧姆·厘米2〕;对于方形镶嵌式结构图形，这时Ron＝4.7×10-7·b·V1.3 B。实际制造所得p区及n区杂质浓度如高于所给值，则击穿电压下降;如低于所给值，则导通电阻增加。
和上述设计规则有关的特征是，本发明要求n区有效施主总电荷与p区有效受主总电荷相等或接近，两种电荷相对差别如超过50%，则同样CB层厚度下的耐压明显下降。根据器件结构的要求和工艺条件的限制，n区和p区的横截面积的大小可以不等，或可以相等，但n区和p区的有效杂质总量应满足上述要求。
本发明提供的CB层，其中n区与p区之间並不需要载流子流动，因此也可以在每个n区和p区之间有介质层隔开，两个区中的电荷产生的电场仍然可以大部分相互抵消。另一方面，如果器件结构要求CB层中的n区为导电区，则CB层中的p区与n+之间可以有介质隔开;如果器件结构要求CB层中的p区为导电区，则n区与p+区之间可以有介质层相隔。这样既不影响CB层的导电能力，又对器件的耐压有利，同时对减小寄生效应也有利。
本发明还提出比上述均匀掺杂的n区及p区更优越的掺杂结构，可达到导 通电阻比上述方法再低25%。这种结构是在均匀掺杂的基础上再有一附加的杂质浓度梯度，它使n区靠近n+区处的施主浓度大于靠近p+区的，p区靠近n+区处的受主浓度小于靠近p+区的。这时CB层的厚度对条状图形应为0.019V1.2 B〔微米〕，对其它图形应为0.017V1.2 B〔微米〕，浓度梯度之值对条状图形为3.0×1020V-2.6 B〔厘米-4〕，对其它图形为4.6×1020·V-2.6 B〔厘米-4〕。
发明人对耐压区复合缓冲层结构的主要寄生效应：结型场效应管（JFET）效应进行了全面的计算，结果表明，复合缓冲层结构的夹断电流密度远远大于一般功率器件的工作电流密度，这说明寄生的JFET效应对本发明的器件的优越性並无明显的影响。
在本发明提供的复合缓冲层上，制作各种类型的功率器件，可以得到性能优良的各类新结构功率器件。
本发明提供了新结构的垂直导电型功率MOSFET，在p区和n区相间排列的复合缓冲层上，根据要求，制作各种结构的功率MOSFET。如图4所示的CB-RMOS结构;图5所示的CB-VDMOS结构;图6所示的CB-VVMOS结构，这些结构这里统称为复合缓冲层MOS管（CBMOS）。
本发明提供的另一类是双极型功率器件，其中一种是高压二极管结构（称为CB-Diode），如图7所示;另一种是高压双极型功率晶体管（称为CB-Bipolar），如图8所示。
本发明提供的第三类是复合缓冲层静电诱导晶体管（CB-SIT），在复合缓冲层上再外延和制作静电诱导结构，其栅可以采用埋栅，也可以是表面栅，如图9所示的是带复合缓冲层的表面栅静电诱导晶体管。
本发明提供的复合缓冲层耐压结构，除了可用于上述所列几类功率器件外，还可用于其它种类的功率器件，如晶闸管等，而且随着科学技术的发展， 在本发明所提供的复合缓冲层结构上可制出更多的新型功率器件。
本发明所提供的各类新结构的功率器件，由于耐压区为复合缓冲层结构，它由p区和n区相间排列而构成，因此有显著的优点。当外加电压使缓冲层耗尽时，p型区受主电荷与n型区施主电荷产生的电场大部分相抵消，因此，这两区对电场的作用接近于一个本征层的作用，从而在厚度相同的情况下，不仅耐压可以提高，而且掺杂浓度可以提高，使导通时电阻大大下降。
经过对CB-RMOS（图4所示）结构进行详细深入的理论计算，表明单位面积的导通电阻与击穿电压的关系为Ron∝V1.3 B，而原来结构的RMOS，其Ron∝V2.5 B。此外，本发明的单位面积的Ron与p区（及n区）的宽度b成正比，因此，随着微细加工技术的进步，Ron还可以不断减小。可见，本发明在改善导通电阻Ron（或正向压降）与器件耐压的矛盾方面有了突破，例如一个800V的带复合缓冲层结构的RMOS，在现在工艺水平下按本发明的均匀杂质分布，Ron只有原结构的百分之四，如按本发明的优化梯度分布，Ron只有原来结构的百分之二点八。
由于以上优点，使得具有本发明所提供的复合缓冲层结构的功率器件具有耐压高，导通电阻（或正向压降）小等特点，从而也可缓解其它参数的设计矛盾，得到高性能的各类功率器件。
本发明的附图说明：
图1是现有技术的RMOS结构示意图;
图2是本发明提供的复合缓冲层（CB层）耐压结构;
图3是本发明提供的CB层横截面上的几个典型图形。其中，图3-1为条状结构，图3-2为六角形结构，图3-3为方形镶嵌式结构。
图4是本发明的一种实施例-CB-RMOS单元结构剖面示意图;
图5是本发明的另一种实施例-CB-VDMOS单元结构剖面示意图;
图6是本发明第三种实施例-CB-VVMOS单元结构剖面示意图;
图7是本发明第四种实施例-CB二极管（CB-Diode）结构图;
图8是本发明第五种实施例-CB-Bipolar单元结构剖面图;
图9是本发明第六种实施例-CB-SIT单元结构图。
下面依据图1～图9对本发明作进一步的描述。
图1是现有技术制作的RMOS，它是在n+（或p+）衬底4上外延n-（或p-）层5，然后扩散形成p区（或n区）3，再掩蔽扩散或离子注入n+（或p+）2，接着进行开垂直槽，和进行栅氧化1，最后做金属电极D、S、G。
图2是本发明提供的复合缓冲层结构，实现的方法：一是n+（或p+）衬底4上外延一层n（或p）5，然后在5上进行选择开垂直槽，再进行外延填充p（或n），把槽填满;二是在衬底4上外延5后，利用中子照射，将部分区域的n（或p）嬗变成p（或n），形成n区6和p区7相间排列的复合缓冲层。在复合缓冲层上根据需要制作p+（或n+）区8。
图3是本发明所提供的复合缓冲层横截面上的几个典型图形，其中图3-1为条状结构，6为n区（或p区），7为p区（或n区）;图3-2为六角形结构，6为n区（或p区）、7为p区（或n区）;图3-3为方形镶嵌式图形，6为n区（或p区），7为p区（或n区）。
图4是本发明的一种最适合的实施例，称CB-RMOS，在衬底n+（或p+）4上外延n（或p）5，将5按图2的方法制成复合结构，其中6为n区（或p区），7为p区（或n区），再在5上外延或扩散一层p（或n）区3，然后进行源区2扩散或离子注入-n+（或p+），再开垂直槽，然后栅氧化1，最后做金属电极。其元胞图形可以是条状、方形、六角、三角、圆形等。其中6区与7区之 间可以有介质相隔，7区与4区之间也可以有介质相隔。
图5是本发明又一实施例，CB-VDMOS单元结构，制作方式与图4结构基本相同，只是不用开槽工艺，同样6区与7区之间可以有介质相隔，7区与4区之间也可以有介质相隔。
图6是本发明实施的带复合缓冲层的VVMOS（CB-VVMOS）结构单元，制作步骤和方法与图4的基本上一样，不同点是开槽工艺，这里开的是V形槽，这是利用不同晶向的异向腐蚀速率而得。
图7是本发明实施的复合缓冲层高压二极管（CB-Diode）示意图，在衬底n+（或p+）4上制作复合缓冲层5，其中6与7为二种不同导电类型的区域，掺杂较轻，然后扩散形成p+（或n+）区8，再上下做金属电极。
图8是本发明实施的带复合缓冲层的双极型晶体管（CB-Bipolar）结构示意图。衬底n+（或p+）4，外延后制作复合缓冲层5，其中6为n-（或p-）区，7为p-（或n-）区，然后扩散外基区p+（或n+）9，接着扩散内基区p区（或n区）10，然后扩散或注入形成发射区n+（或p+）区11，最后进行金属电极工艺。
图9是本发明实施的带复合缓冲层的静电诱导晶体管（CB-SIT），只是以表面栅结构为例，其中复合缓冲层制作与图2相同，在此基础上形成p+（或n+）区12，然后形成n+（或p+）区13，最后制作金属电极。
上述各实施例中的7与4之间可以有介质层相隔，6与7之间也可以有介质层相隔。

Claims (17)

1、半导体功率器件，它包括有一个P+区与n+区之间的耐压区，其特征在于：所述的耐压区中，在P+区相接的平面与n+区界面之间有由P区与n区交替组合而成的复合缓冲层，复合缓冲层中每个p区与每个n区均有与上述两个面相交的交接面，除这两个交接面外，不论复合缓冲层的结构图形如何，其中的每个p区被相邻的n区包围，每个n区被相邻的p区包围。
2、根据权利要求1所述的半导体功率器件，其特征在于：所述的耐压区的复合缓冲层中，n区有效施主总电荷与p区有效受主总电荷相对差别不超过50%。
3、根据权利要求2所述的半导体功率器件，其特征在于：所述耐压区的复合缓冲层中每个n区和每个p区的杂质分布是均匀的。
4、根据权利要求2所述的半导体功率器件，其特征在于：所述耐压区的复合缓冲层中每个n区和每个p区的杂质分布是不均匀的，其中，n区靠近n+区处的施主浓度大于靠近p+区的施主浓度，p区靠近p+区的受主浓度大于靠近n+区的受主浓度。
5、根据权利要求3所述的半导体功率器件，其特征在于：当耐压要求为VB〔伏〕、复合缓冲层结构图形为条状图形、其中n区与p区有同样宽度b（以微米计）时，则复合缓冲层厚度为0.024V1.2 B，〔微米〕，n区的有效施主浓度与p区的有效受浓度均为7.2×1016V-0.2 B/b〔厘米-3〕。
6、根据权利要求3所述的半导体功率器件，其特征在于，当耐压要求为VB〔伏〕、结构图形为方形镶嵌式，复合缓冲层中p区与n区有同样宽度b（以微米计）时，则复合缓冲层的厚度为0.024V1.2 B，〔微米〕，复合缓冲层每一区的有效杂质浓度为7.2×1016V-0.2 B/b〔厘米-3〕。
7、根据权利要求3所述的半导体功率器件，其特征在于：当耐压要求为VB〔伏〕，结构图形为三角形单元、六角形单元、圆形单元，并接而成时，则复合缓冲层的厚度为0.024V1.2 B，〔微米〕，复合缓冲层中p区与n区面积相等，每一区的有效杂质浓度为7.2×1016V-0.2 B/b〔厘米-3〕，其中b为每个区面积的平方根。
8、根据权利要求4所述的半导体功率器件，其特征在于：当耐压要求为VB〔伏〕，结构图形为条状图形，复合缓冲层中n区与p区有同样宽度b（以微米计）时，所述的每个n区和每个p区杂质分布不均匀，杂质浓度含一常数部分及一个线性部分，其常数部分为7.2×1016V-0.2 B/b〔厘米-3〕，其线性部分之梯度为3.0×1020V-0.2 B/b〔厘米-4〕，这时，复合缓冲层的厚度为0.019V1.2〔微米〕。
9、根据权利要求4所述的半导体功率器件，其特征在于：当耐压要求为VB〔伏〕，结构图形为方形镶嵌结构，复合缓冲层中复合缓冲层中n区与p区有同样宽度b（以微米计）时，所述的每个n区和每个p区杂质分布不均匀，杂质浓度含一常数部分及一个线性部分，其常数部分为7.2×1016V-0.2 B/b〔厘米-3〕，其线性部分之梯度为3.0×1020V-0.2 B/b〔厘米-4〕，这时，复合缓冲层的厚度为0.019V1.2 B〔微米〕。
10、根据权利要求4所述的半导体功率器件，其特征在于：当耐压要求为VB〔伏〕，结构图形为三角形单元、六角形单元、圆形单元并并接而成时，所述每个n区和每个p区杂质分布不均匀，杂质浓度含一常数部分及一个线性部分，其常数部分为7.2×1016V-0.2/b〔厘米-3〕，其线性部分之梯度为3.0×1020V-0.2/b〔厘米-4〕，这时，复合缓冲层的厚度为0.019V1.2 B〔微米〕。
11、根据权利要求2所述的半导体功率器件，其特征在于：所述的耐压区的复合缓冲层的两面与n+区及p+区是直接相接的。
12、根据权利要求2所述的半导体功率器件，其特征在于：所述的耐压区的复合缓冲层中的相邻的p区与n区是直接相接的。
13、根据权利要求2所述的半导体功率器件，其特征在于：所述的耐压区的复合缓冲层中的相邻的p区与n区之间隔有介质层。
14、根据权利要求2所述的半导体功率器件，其特征在于：所述的耐压区的复合缓冲层中的n区与p区的截面积是不相等的。
15、半导体功率器件，它包括有一个p+区与n+区之间的耐压区，其特征在于：所述的耐压区中，在p+区相接的平面与n+区界面之间有由p区与n区交替组合而成的复合缓冲层，复合缓冲层中n区为导电区，p区与n+区之间隔有介质层。
16、半导体功率器件，它包括有一个p+区与n+区之间的耐压区，其特征在于：所述的耐压区中，在p+区相接的平面与n+区界面之间有由p区与n区交替组合而成的复合缓冲层，复合缓冲层中n区为导电区，p区与n+区之间隔有介质层。
17、根据权利要求15或16所述的半导体功率器件，其特征在于：所述的耐压区的复合缓冲层中，n区有效地施主总电荷与p区有效受主总电荷相对差别不超过50%。
CN91101845A 1991-03-19 1991-03-19 半导体功率器件 Expired CN1019720B (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN91101845A CN1019720B (zh) 1991-03-19 1991-03-19 半导体功率器件
US07/761,407 US5216275A (en) 1991-03-19 1991-09-17 Semiconductor power devices with alternating conductivity type high-voltage breakdown regions

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN91101845A CN1019720B (zh) 1991-03-19 1991-03-19 半导体功率器件

Publications (2)

Publication Number Publication Date
CN1056018A CN1056018A (zh) 1991-11-06
CN1019720B true CN1019720B (zh) 1992-12-30

Family

ID=4905301

Family Applications (1)

Application Number Title Priority Date Filing Date
CN91101845A Expired CN1019720B (zh) 1991-03-19 1991-03-19 半导体功率器件

Country Status (2)

Country Link
US (1) US5216275A (zh)
CN (1) CN1019720B (zh)

Families Citing this family (378)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE1007283A3 (nl) * 1993-07-12 1995-05-09 Philips Electronics Nv Halfgeleiderinrichting met een most voorzien van een extended draingebied voor hoge spanningen.
CN1035294C (zh) * 1993-10-29 1997-06-25 电子科技大学 具有异形掺杂岛的半导体器件耐压层
TW290735B (zh) * 1994-01-07 1996-11-11 Fuji Electric Co Ltd
DE69533134T2 (de) 1995-10-30 2005-07-07 Stmicroelectronics S.R.L., Agrate Brianza Leistungsbauteil hoher Dichte in MOS-Technologie
DE69534919T2 (de) 1995-10-30 2007-01-25 Stmicroelectronics S.R.L., Agrate Brianza Leistungsvorrichtung in MOS-Technologie mit einer einzigen kritischen Größe
JP2006279064A (ja) * 1996-01-22 2006-10-12 Fuji Electric Device Technology Co Ltd 半導体装置の製造方法
US6097063A (en) * 1996-01-22 2000-08-01 Fuji Electric Co., Ltd. Semiconductor device having a plurality of parallel drift regions
GB2355586B (en) * 1996-01-22 2001-05-30 Fuji Electric Co Ltd Semiconductor device
US6724040B2 (en) * 1996-01-22 2004-04-20 Fuji Electric Co., Ltd. Semiconductor device
US6184555B1 (en) 1996-02-05 2001-02-06 Siemens Aktiengesellschaft Field effect-controlled semiconductor component
DE19604044C2 (de) * 1996-02-05 2002-01-17 Siemens Ag Durch Feldeffekt steuerbares Halbleiterbauelement
DE19604043C2 (de) * 1996-02-05 2001-11-29 Siemens Ag Durch Feldeffekt steuerbares Halbleiterbauelement
DE19611045C1 (de) * 1996-03-20 1997-05-22 Siemens Ag Durch Feldeffekt steuerbares Halbleiterbauelement
WO1997040527A1 (de) * 1996-04-22 1997-10-30 Siemens Aktiengesellschaft Verfahren zur herstellung eines dotierten gebietes in einem halbleitersubstrat
US5705830A (en) * 1996-09-05 1998-01-06 Northrop Grumman Corporation Static induction transistors
JP3938964B2 (ja) * 1997-02-10 2007-06-27 三菱電機株式会社 高耐圧半導体装置およびその製造方法
US5978738A (en) 1997-02-13 1999-11-02 Anthony Brown Severe weather detector and alarm
DE19730759C1 (de) 1997-07-17 1998-09-03 Siemens Ag Vertikaler Leistungs-MOSFET
DE19731495C2 (de) 1997-07-22 1999-05-20 Siemens Ag Durch Feldeffekt steuerbarer Bipolartransistor und Verfahren zu seiner Herstellung
DE19748523C2 (de) * 1997-11-03 1999-10-07 Siemens Ag Halbleiterbauelement, Verfahren zum Herstellen eines derartigen Halbleiterbauelementes und Verwendung des Verfahrens
US6337499B1 (en) * 1997-11-03 2002-01-08 Infineon Technologies Ag Semiconductor component
US6081009A (en) * 1997-11-10 2000-06-27 Intersil Corporation High voltage mosfet structure
DE19818299B4 (de) * 1998-04-23 2006-10-12 Infineon Technologies Ag Niederohmiger Hochvolt-Feldeffekttransistor
DE19819590C1 (de) * 1998-04-30 1999-06-24 Siemens Ag MOS-Leistungstransistor
DE19820223C1 (de) 1998-05-06 1999-11-04 Siemens Ag Verfahren zum Herstellen einer Epitaxieschicht mit lateral veränderlicher Dotierung
EP0961325B1 (en) 1998-05-26 2008-05-07 STMicroelectronics S.r.l. High integration density MOS technology power device
KR100363530B1 (ko) 1998-07-23 2002-12-05 미쓰비시덴키 가부시키가이샤 반도체 장치 및 그 제조 방법
US6936892B2 (en) * 1998-07-24 2005-08-30 Fuji Electric Co., Ltd. Semiconductor device with alternating conductivity type layer and method of manufacturing the same
JP3988262B2 (ja) 1998-07-24 2007-10-10 富士電機デバイステクノロジー株式会社 縦型超接合半導体素子およびその製造方法
US6022790A (en) * 1998-08-05 2000-02-08 International Rectifier Corporation Semiconductor process integration of a guard ring structure
DE19840032C1 (de) * 1998-09-02 1999-11-18 Siemens Ag Halbleiterbauelement und Herstellungsverfahren dazu
DE19841754A1 (de) 1998-09-11 2000-03-30 Siemens Ag Schalttransistor mit reduzierten Schaltverlusten
DE19843959B4 (de) * 1998-09-24 2004-02-12 Infineon Technologies Ag Verfahren zum Herstellen eines Halbleiterbauelements mit einem sperrenden pn-Übergang
DE19846212C1 (de) * 1998-10-07 1999-11-25 Siemens Ag Halbleiter-Bauelement mit hoher Leitfähigkeit und hoher Durchbruchsspannung
WO2000024061A1 (de) * 1998-10-16 2000-04-27 Siemens Aktiengesellschaft Leistungshalbleiterbauelement, betriebsverfahren und verwendung als schalter
DE19848828C2 (de) 1998-10-22 2001-09-13 Infineon Technologies Ag Halbleiterbauelement mit kleiner Durchlaßspannung und hoher Sperrfähigkeit
US6677626B1 (en) 1998-11-11 2004-01-13 Fuji Electric Co., Ltd. Semiconductor device with alternating conductivity type layer and method of manufacturing the same
US6291856B1 (en) * 1998-11-12 2001-09-18 Fuji Electric Co., Ltd. Semiconductor device with alternating conductivity type layer and method of manufacturing the same
JP2000156978A (ja) * 1998-11-17 2000-06-06 Fuji Electric Co Ltd ソフトスイッチング回路
US6084264A (en) * 1998-11-25 2000-07-04 Siliconix Incorporated Trench MOSFET having improved breakdown and on-resistance characteristics
DE19854915C2 (de) * 1998-11-27 2002-09-05 Infineon Technologies Ag MOS-Feldeffekttransistor mit Hilfselektrode
GB9826041D0 (en) * 1998-11-28 1999-01-20 Koninkl Philips Electronics Nv Trench-gate semiconductor devices and their manufacture
WO2000035020A1 (de) * 1998-12-07 2000-06-15 Infineon Technologies Ag Laterales hochvolt-halbleiterbaulement mit reduziertem spezifischem einschaltwiderstand
DE69838453D1 (de) * 1998-12-09 2007-10-31 St Microelectronics Srl Leistungsbauelement mit MOS-Gate für hohe Spannungen und diesbezügliches Herstellungsverfahren
US6452230B1 (en) 1998-12-23 2002-09-17 International Rectifier Corporation High voltage mosgated device with trenches to reduce on-resistance
JP4447065B2 (ja) * 1999-01-11 2010-04-07 富士電機システムズ株式会社 超接合半導体素子の製造方法
DE19904103B4 (de) * 1999-02-02 2005-04-14 Infineon Technologies Ag IGBT mit verbesserter Durchlaßspannung
US6204097B1 (en) 1999-03-01 2001-03-20 Semiconductor Components Industries, Llc Semiconductor device and method of manufacture
DE19913375B4 (de) * 1999-03-24 2009-03-26 Infineon Technologies Ag Verfahren zur Herstellung einer MOS-Transistorstruktur
US6448160B1 (en) 1999-04-01 2002-09-10 Apd Semiconductor, Inc. Method of fabricating power rectifier device to vary operating parameters and resulting device
US20010001494A1 (en) * 1999-04-01 2001-05-24 Christopher B. Kocon Power trench mos-gated device and process for forming same
US6696707B2 (en) 1999-04-23 2004-02-24 Ccp. Clare Corporation High voltage integrated switching devices on a bonded and trenched silicon substrate
US6313482B1 (en) * 1999-05-17 2001-11-06 North Carolina State University Silicon carbide power devices having trench-based silicon carbide charge coupling regions therein
US6433385B1 (en) 1999-05-19 2002-08-13 Fairchild Semiconductor Corporation MOS-gated power device having segmented trench and extended doping zone and process for forming same
US6198127B1 (en) 1999-05-19 2001-03-06 Intersil Corporation MOS-gated power device having extended trench and doping zone and process for forming same
US6492663B1 (en) * 1999-05-20 2002-12-10 Richard A. Blanchard Universal source geometry for MOS-gated power devices
US6191447B1 (en) 1999-05-28 2001-02-20 Micro-Ohm Corporation Power semiconductor devices that utilize tapered trench-based insulating regions to improve electric field profiles in highly doped drift region mesas and methods of forming same
EP1192640A2 (en) 1999-06-03 2002-04-03 GENERAL SEMICONDUCTOR, Inc. Power mosfet and method of making the same
JP2006210368A (ja) * 1999-07-02 2006-08-10 Toyota Central Res & Dev Lab Inc 縦型半導体装置及びその製造方法
DE19930783A1 (de) * 1999-07-03 2001-01-04 Bosch Gmbh Robert Halbleiterbauelement
GB9916370D0 (en) * 1999-07-14 1999-09-15 Koninkl Philips Electronics Nv Manufacture of semiconductor devices and material
GB9916520D0 (en) * 1999-07-15 1999-09-15 Koninkl Philips Electronics Nv Manufacture of semiconductor devices and material
FR2797094B1 (fr) * 1999-07-28 2001-10-12 St Microelectronics Sa Procede de fabrication de composants unipolaires
JP4774580B2 (ja) * 1999-08-23 2011-09-14 富士電機株式会社 超接合半導体素子
DE19942679C1 (de) * 1999-09-07 2001-04-05 Infineon Technologies Ag Verfahren zum Herstellen eines hochvolttauglichen Randabschlusses bei einem nach dem Prinzip der lateralen Ladungskompensation vorgefertigten Grundmaterialwafer
GB9921071D0 (en) * 1999-09-08 1999-11-10 Univ Montfort Insulated base transistor
DE19946167C2 (de) * 1999-09-27 2002-04-25 Infineon Technologies Ag Integrierte Halbbrückenschaltung
DE19947020B4 (de) * 1999-09-30 2006-02-23 Infineon Technologies Ag Kompensationsbauelement mit variabler Ladungsbilanz und dessen Herstellungsverfahren
JP2001119022A (ja) * 1999-10-20 2001-04-27 Fuji Electric Co Ltd 半導体装置及びその製造方法
US6475864B1 (en) 1999-10-21 2002-11-05 Fuji Electric Co., Ltd. Method of manufacturing a super-junction semiconductor device with an conductivity type layer
JP4774586B2 (ja) * 1999-10-21 2011-09-14 富士電機株式会社 半導体素子の製造方法
JP3485081B2 (ja) 1999-10-28 2004-01-13 株式会社デンソー 半導体基板の製造方法
JP3804375B2 (ja) 1999-12-09 2006-08-02 株式会社日立製作所 半導体装置とそれを用いたパワースイッチング駆動システム
US6461918B1 (en) 1999-12-20 2002-10-08 Fairchild Semiconductor Corporation Power MOS device with improved gate charge performance
JP4765012B2 (ja) * 2000-02-09 2011-09-07 富士電機株式会社 半導体装置及びその製造方法
US6376878B1 (en) * 2000-02-11 2002-04-23 Fairchild Semiconductor Corporation MOS-gated devices with alternating zones of conductivity
DE10008570B4 (de) * 2000-02-24 2006-05-04 Infineon Technologies Ag Kompensations-Halbleiterbauelement
JP4363736B2 (ja) * 2000-03-01 2009-11-11 新電元工業株式会社 トランジスタ及びその製造方法
US6396137B1 (en) * 2000-03-15 2002-05-28 Kevin Mark Klughart Integrated voltage/current/power regulator/switch system and method
JP3636345B2 (ja) 2000-03-17 2005-04-06 富士電機デバイステクノロジー株式会社 半導体素子および半導体素子の製造方法
JP3860705B2 (ja) 2000-03-31 2006-12-20 新電元工業株式会社 半導体装置
JP4965756B2 (ja) * 2000-04-12 2012-07-04 株式会社東芝 半導体装置
JP4534303B2 (ja) 2000-04-27 2010-09-01 富士電機システムズ株式会社 横型超接合半導体素子
JP4240752B2 (ja) * 2000-05-01 2009-03-18 富士電機デバイステクノロジー株式会社 半導体装置
DE10024480B4 (de) * 2000-05-18 2006-02-16 Infineon Technologies Ag Kompensationsbauelement mit verbesserter Robustheit
GB0012137D0 (en) * 2000-05-20 2000-07-12 Koninkl Philips Electronics Nv A semiconductor device
DE10026924A1 (de) * 2000-05-30 2001-12-20 Infineon Technologies Ag Kompensationsbauelement
DE10026925C2 (de) * 2000-05-30 2002-04-18 Infineon Technologies Ag Feldeffektgesteuertes, vertikales Halbleiterbauelement
US6660571B2 (en) * 2000-06-02 2003-12-09 General Semiconductor, Inc. High voltage power MOSFET having low on-resistance
TW499757B (en) * 2000-06-02 2002-08-21 Gen Semiconductor Inc High voltage power MOSEFT having low on-resistance
US6479352B2 (en) 2000-06-02 2002-11-12 General Semiconductor, Inc. Method of fabricating high voltage power MOSFET having low on-resistance
US6627949B2 (en) 2000-06-02 2003-09-30 General Semiconductor, Inc. High voltage power MOSFET having low on-resistance
US6406982B2 (en) 2000-06-05 2002-06-18 Denso Corporation Method of improving epitaxially-filled trench by smoothing trench prior to filling
JP4635304B2 (ja) * 2000-07-12 2011-02-23 富士電機システムズ株式会社 双方向超接合半導体素子およびその製造方法
JP2002100772A (ja) 2000-07-17 2002-04-05 Toshiba Corp 電力用半導体装置及びその製造方法
US6566223B1 (en) 2000-08-15 2003-05-20 C. P. Clare Corporation High voltage integrated switching devices on a bonded and trenched silicon substrate
US7745289B2 (en) 2000-08-16 2010-06-29 Fairchild Semiconductor Corporation Method of forming a FET having ultra-low on-resistance and low gate charge
US6528849B1 (en) 2000-08-31 2003-03-04 Motorola, Inc. Dual-gate resurf superjunction lateral DMOSFET
JP4764987B2 (ja) 2000-09-05 2011-09-07 富士電機株式会社 超接合半導体素子
DE10049861A1 (de) * 2000-10-09 2002-04-18 Infineon Technologies Ag Kompensations-Halbleiterbauelement und Verfahren zu dessen Herstellung
JP4843843B2 (ja) 2000-10-20 2011-12-21 富士電機株式会社 超接合半導体素子
DE10066053B4 (de) * 2000-12-08 2006-03-30 Infineon Technologies Ag Halbleiterbauelement mit erhöhter Durchbruchspannung
DE10061528C1 (de) * 2000-12-11 2002-07-25 Infineon Technologies Ag Mittels Feldeffekt steuerbares Halbleiterbauelement
DE10061529A1 (de) 2000-12-11 2002-06-27 Infineon Technologies Ag Feldeffekt gesteuertes Halbleiterbauelement und Verfahren
JP3899231B2 (ja) * 2000-12-18 2007-03-28 株式会社豊田中央研究所 半導体装置
US6750528B2 (en) * 2001-01-23 2004-06-15 Agere Systems Inc. Bipolar device
US6713813B2 (en) 2001-01-30 2004-03-30 Fairchild Semiconductor Corporation Field effect transistor having a lateral depletion structure
US6677641B2 (en) 2001-10-17 2004-01-13 Fairchild Semiconductor Corporation Semiconductor structure with improved smaller forward voltage loss and higher blocking capability
US6710403B2 (en) * 2002-07-30 2004-03-23 Fairchild Semiconductor Corporation Dual trench power MOSFET
US6803626B2 (en) 2002-07-18 2004-10-12 Fairchild Semiconductor Corporation Vertical charge control semiconductor device
US6818513B2 (en) 2001-01-30 2004-11-16 Fairchild Semiconductor Corporation Method of forming a field effect transistor having a lateral depletion structure
US6916745B2 (en) 2003-05-20 2005-07-12 Fairchild Semiconductor Corporation Structure and method for forming a trench MOSFET having self-aligned features
US7345342B2 (en) 2001-01-30 2008-03-18 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
US7132712B2 (en) 2002-11-05 2006-11-07 Fairchild Semiconductor Corporation Trench structure having one or more diodes embedded therein adjacent a PN junction
DE10205345B9 (de) * 2001-02-09 2007-12-20 Fuji Electric Co., Ltd., Kawasaki Halbleiterbauelement
DE10108046B4 (de) * 2001-02-20 2006-10-19 Infineon Technologies Ag Halbleiterbauelement
DE10108131A1 (de) * 2001-02-21 2002-09-05 Infineon Technologies Ag Halbleiterschaltung und Schaltnetzteil
JP4839519B2 (ja) * 2001-03-15 2011-12-21 富士電機株式会社 半導体装置
DE10117801B4 (de) * 2001-04-10 2005-12-22 Robert Bosch Gmbh Halbleiterleistungsbauelement und entsprechendes Herstellungsverfahren
DE10117802A1 (de) * 2001-04-10 2002-10-24 Bosch Gmbh Robert Halbleiterleistungsbauelement und entsprechendes Herstellungsverfahren
US6512267B2 (en) * 2001-04-12 2003-01-28 International Rectifier Corporation Superjunction device with self compensated trench walls
JP3534084B2 (ja) * 2001-04-18 2004-06-07 株式会社デンソー 半導体装置およびその製造方法
DE10120656C2 (de) * 2001-04-27 2003-07-10 Infineon Technologies Ag Halbleiterbauelement mit erhöhter Avalanche-Festigkeit
DE10122362B4 (de) * 2001-05-09 2004-12-09 Infineon Technologies Ag Durch Feldeffekt steuerbares Halbleiterbauelement
DE10122364B4 (de) * 2001-05-09 2006-10-19 Infineon Technologies Ag Kompensationsbauelement, Schaltungsanordnung und Verfahren
US6878989B2 (en) * 2001-05-25 2005-04-12 Kabushiki Kaisha Toshiba Power MOSFET semiconductor device and method of manufacturing the same
US6853033B2 (en) 2001-06-05 2005-02-08 National University Of Singapore Power MOSFET having enhanced breakdown voltage
EP1267415A3 (en) * 2001-06-11 2009-04-15 Kabushiki Kaisha Toshiba Power semiconductor device having resurf layer
US6569738B2 (en) * 2001-07-03 2003-05-27 Siliconix, Inc. Process for manufacturing trench gated MOSFET having drain/drift region
US7291884B2 (en) * 2001-07-03 2007-11-06 Siliconix Incorporated Trench MIS device having implanted drain-drift region and thick bottom oxide
US20060038223A1 (en) * 2001-07-03 2006-02-23 Siliconix Incorporated Trench MOSFET having drain-drift region comprising stack of implanted regions
DE10132136C1 (de) 2001-07-03 2003-02-13 Infineon Technologies Ag Halbleiterbauelement mit Ladungskompensationsstruktur sowie zugehöriges Herstellungsverfahren
US7009247B2 (en) * 2001-07-03 2006-03-07 Siliconix Incorporated Trench MIS device with thick oxide layer in bottom of gate contact trench
US7033876B2 (en) * 2001-07-03 2006-04-25 Siliconix Incorporated Trench MIS device having implanted drain-drift region and thick bottom oxide and process for manufacturing the same
JP2003031821A (ja) * 2001-07-17 2003-01-31 Toshiba Corp 半導体装置
DE10137676B4 (de) * 2001-08-01 2007-08-23 Infineon Technologies Ag ZVS-Brückenschaltung zum entlasteten Schalten
JP4865166B2 (ja) * 2001-08-30 2012-02-01 新電元工業株式会社 トランジスタの製造方法、ダイオードの製造方法
CN1179397C (zh) * 2001-09-27 2004-12-08 同济大学 一种制造含有复合缓冲层半导体器件的方法
US6649477B2 (en) * 2001-10-04 2003-11-18 General Semiconductor, Inc. Method for fabricating a power semiconductor device having a voltage sustaining layer with a terraced trench facilitating formation of floating islands
US6465304B1 (en) 2001-10-04 2002-10-15 General Semiconductor, Inc. Method for fabricating a power semiconductor device having a floating island voltage sustaining layer
US7736976B2 (en) * 2001-10-04 2010-06-15 Vishay General Semiconductor Llc Method for fabricating a power semiconductor device having a voltage sustaining layer with a terraced trench facilitating formation of floating islands
US7061066B2 (en) 2001-10-17 2006-06-13 Fairchild Semiconductor Corporation Schottky diode using charge balance structure
GB0125710D0 (en) * 2001-10-26 2001-12-19 Koninkl Philips Electronics Nv Transistor device
US6828609B2 (en) * 2001-11-09 2004-12-07 Infineon Technologies Ag High-voltage semiconductor component
US6819089B2 (en) 2001-11-09 2004-11-16 Infineon Technologies Ag Power factor correction circuit with high-voltage semiconductor component
CN1181559C (zh) * 2001-11-21 2004-12-22 同济大学 一种半导体器件
US6995426B2 (en) 2001-12-27 2006-02-07 Kabushiki Kaisha Toshiba Semiconductor device having vertical metal insulator semiconductor transistors having plural spatially overlapping regions of different conductivity type
US6750104B2 (en) * 2001-12-31 2004-06-15 General Semiconductor, Inc. High voltage power MOSFET having a voltage sustaining region that includes doped columns formed by trench etching using an etchant gas that is also a doping source
US6656797B2 (en) 2001-12-31 2003-12-02 General Semiconductor, Inc. High voltage power MOSFET having a voltage sustaining region that includes doped columns formed by trench etching and ion implantation
US6566201B1 (en) 2001-12-31 2003-05-20 General Semiconductor, Inc. Method for fabricating a high voltage power MOSFET having a voltage sustaining region that includes doped columns formed by rapid diffusion
US6576516B1 (en) 2001-12-31 2003-06-10 General Semiconductor, Inc. High voltage power MOSFET having a voltage sustaining region that includes doped columns formed by trench etching and diffusion from regions of oppositely doped polysilicon
US7078296B2 (en) 2002-01-16 2006-07-18 Fairchild Semiconductor Corporation Self-aligned trench MOSFETs and methods for making the same
JP4126915B2 (ja) * 2002-01-30 2008-07-30 富士電機デバイステクノロジー株式会社 半導体装置
JP3914785B2 (ja) 2002-02-20 2007-05-16 新電元工業株式会社 ダイオード素子
EP2259325B1 (en) * 2002-02-20 2013-12-25 Shindengen Electric Manufacturing Co., Ltd. Transistor device
KR100859701B1 (ko) 2002-02-23 2008-09-23 페어차일드코리아반도체 주식회사 고전압 수평형 디모스 트랜지스터 및 그 제조 방법
JP3908572B2 (ja) 2002-03-18 2007-04-25 株式会社東芝 半導体素子
US6686244B2 (en) * 2002-03-21 2004-02-03 General Semiconductor, Inc. Power semiconductor device having a voltage sustaining region that includes doped columns formed with a single ion implantation step
JP4212288B2 (ja) * 2002-04-01 2009-01-21 株式会社東芝 半導体装置およびその製造方法
US6768180B2 (en) * 2002-04-04 2004-07-27 C. Andre T. Salama Superjunction LDMOST using an insulator substrate for power integrated circuits
JP3993458B2 (ja) * 2002-04-17 2007-10-17 株式会社東芝 半導体装置
DE10217610B4 (de) * 2002-04-19 2005-11-03 Infineon Technologies Ag Metall-Halbleiter-Kontakt, Halbleiterbauelement, integrierte Schaltungsanordnung und Verfahren
US6784505B2 (en) * 2002-05-03 2004-08-31 Fairchild Semiconductor Corporation Low voltage high density trench-gated power device with uniformly doped channel and its edge termination technique
US6750524B2 (en) 2002-05-14 2004-06-15 Motorola Freescale Semiconductor Trench MOS RESURF super-junction devices
US6841825B2 (en) * 2002-06-05 2005-01-11 Shindengen Electric Manufacturing Co., Ltd. Semiconductor device
JP3971670B2 (ja) * 2002-06-28 2007-09-05 新電元工業株式会社 半導体装置
DE10240861B4 (de) * 2002-09-04 2007-08-30 Infineon Technologies Ag Mittels Feldeffekt steuerbares Halbleiterbauelement und Verfahren zu dessen Herstellung
DE10245049B4 (de) * 2002-09-26 2007-07-05 Infineon Technologies Ag Kompensationshalbleiterbauelement
US6825513B2 (en) * 2002-09-27 2004-11-30 Xerox Corporation High power mosfet semiconductor device
DE10245550B4 (de) * 2002-09-30 2007-08-16 Infineon Technologies Ag Kompensationsbauelement und Verfahren zu dessen Herstellung
US7576388B1 (en) 2002-10-03 2009-08-18 Fairchild Semiconductor Corporation Trench-gate LDMOS structures
US7033891B2 (en) 2002-10-03 2006-04-25 Fairchild Semiconductor Corporation Trench gate laterally diffused MOSFET devices and methods for making such devices
JP3966151B2 (ja) * 2002-10-10 2007-08-29 富士電機デバイステクノロジー株式会社 半導体素子
US6710418B1 (en) 2002-10-11 2004-03-23 Fairchild Semiconductor Corporation Schottky rectifier with insulation-filled trenches and method of forming the same
US6870218B2 (en) 2002-12-10 2005-03-22 Fairchild Semiconductor Corporation Integrated circuit structure with improved LDMOS design
US7126186B2 (en) * 2002-12-20 2006-10-24 Infineon Technolgies Ag Compensation component and process for producing the component
US6979862B2 (en) * 2003-01-23 2005-12-27 International Rectifier Corporation Trench MOSFET superjunction structure and method to manufacture
JP4695824B2 (ja) * 2003-03-07 2011-06-08 富士電機ホールディングス株式会社 半導体ウエハの製造方法
DE10316710B3 (de) * 2003-04-11 2004-08-12 Infineon Technologies Ag Verfahren zur Herstellung eines eine Kompensationsstruktur aufweisenden Halbleiteiterkörpers
DE10317381B4 (de) * 2003-04-15 2005-04-14 Infineon Technologies Ag Vertikaler Leistungstransistor mit niedriger Gate-Drain-Kapazität und Verfahren zu dessen Herstellung
JP3721172B2 (ja) * 2003-04-16 2005-11-30 株式会社東芝 半導体装置
JP2004342660A (ja) * 2003-05-13 2004-12-02 Toshiba Corp 半導体装置及びその製造方法
US7652326B2 (en) 2003-05-20 2010-01-26 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
US6865093B2 (en) * 2003-05-27 2005-03-08 Power Integrations, Inc. Electronic circuit control element with tap element
US7015104B1 (en) * 2003-05-29 2006-03-21 Third Dimension Semiconductor, Inc. Technique for forming the deep doped columns in superjunction
JP4166627B2 (ja) * 2003-05-30 2008-10-15 株式会社デンソー 半導体装置
US7023050B2 (en) 2003-07-11 2006-04-04 Salama C Andre T Super junction / resurf LDMOST (SJR-LDMOST)
DE10337808B3 (de) * 2003-08-14 2004-10-21 Infineon Technologies Ag Verfahren zum Herstellen eines Halbleiterbauelements mit Ladungskompensationsstruktur
JP4393144B2 (ja) 2003-09-09 2010-01-06 株式会社東芝 電力用半導体装置
US7166890B2 (en) 2003-10-21 2007-01-23 Srikant Sridevan Superjunction device with improved ruggedness
JP4289123B2 (ja) * 2003-10-29 2009-07-01 富士電機デバイステクノロジー株式会社 半導体装置
KR100994719B1 (ko) 2003-11-28 2010-11-16 페어차일드코리아반도체 주식회사 슈퍼정션 반도체장치
EP1721344A4 (en) * 2003-12-19 2009-06-10 Third Dimension 3D Sc Inc METHOD FOR MANUFACTURING A SUPERJUNCTION DEVICE
KR20070032624A (ko) * 2003-12-19 2007-03-22 써드 디멘존 세미컨덕터, 인코포레이티드 종래의 종단을 갖는 수퍼 접합 장치를 제조하는 방법
TWI348219B (en) * 2003-12-19 2011-09-01 Third Dimension 3D Sc Inc A method for manufacturing a superjunction device with wide mesas
JP4417962B2 (ja) * 2003-12-19 2010-02-17 サード ディメンジョン （スリーディ） セミコンダクタ インコーポレイテッド 超接合デバイスの製造での平坦化方法
US7023069B2 (en) * 2003-12-19 2006-04-04 Third Dimension (3D) Semiconductor, Inc. Method for forming thick dielectric regions using etched trenches
JP4536366B2 (ja) * 2003-12-22 2010-09-01 株式会社豊田中央研究所 半導体装置とその設計支援用プログラム
US7368777B2 (en) 2003-12-30 2008-05-06 Fairchild Semiconductor Corporation Accumulation device with charge balance structure and method of forming the same
US7405452B2 (en) * 2004-02-02 2008-07-29 Hamza Yilmaz Semiconductor device containing dielectrically isolated PN junction for enhanced breakdown characteristics
JP4904673B2 (ja) * 2004-02-09 2012-03-28 富士電機株式会社 半導体装置および半導体装置の製造方法
DE102004007197B4 (de) 2004-02-13 2012-11-08 Infineon Technologies Ag Hochsperrendes Halbleiterbauelement mit niedriger Durchlassspannung
JP2005243716A (ja) * 2004-02-24 2005-09-08 Sanyo Electric Co Ltd 半導体装置
US7183610B2 (en) 2004-04-30 2007-02-27 Siliconix Incorporated Super trench MOSFET including buried source electrode and method of fabricating the same
US6982193B2 (en) 2004-05-10 2006-01-03 Semiconductor Components Industries, L.L.C. Method of forming a super-junction semiconductor device
US7027277B1 (en) 2004-05-21 2006-04-11 National Semiconductor Corporation High voltage tolerant electrostatic discharge (ESD) protection clamp circuitry
US20050275037A1 (en) * 2004-06-12 2005-12-15 Chung Shine C Semiconductor devices with high voltage tolerance
US7002398B2 (en) * 2004-07-08 2006-02-21 Power Integrations, Inc. Method and apparatus for controlling a circuit with a high voltage sense device
JP4068597B2 (ja) * 2004-07-08 2008-03-26 株式会社東芝 半導体装置
US7352036B2 (en) 2004-08-03 2008-04-01 Fairchild Semiconductor Corporation Semiconductor power device having a top-side drain using a sinker trench
JP4967236B2 (ja) * 2004-08-04 2012-07-04 富士電機株式会社 半導体素子
GB0419558D0 (en) * 2004-09-03 2004-10-06 Koninkl Philips Electronics Nv Vertical semiconductor devices and methods of manufacturing such devices
DE102004045944B4 (de) 2004-09-22 2018-08-16 Infineon Technologies Ag MOS-Feldeffekttransistor
US7265415B2 (en) 2004-10-08 2007-09-04 Fairchild Semiconductor Corporation MOS-gated transistor with reduced miller capacitance
JP2006165013A (ja) * 2004-12-02 2006-06-22 Nissan Motor Co Ltd 半導体装置及びその製造方法
JP4940546B2 (ja) * 2004-12-13 2012-05-30 株式会社デンソー 半導体装置
US7598586B2 (en) * 2004-12-24 2009-10-06 Rohm Co., Ltd. Semiconductor device and production method therefor
US7439583B2 (en) * 2004-12-27 2008-10-21 Third Dimension (3D) Semiconductor, Inc. Tungsten plug drain extension
TWI401749B (zh) 2004-12-27 2013-07-11 Third Dimension 3D Sc Inc 用於高電壓超接面終止之方法
US7482220B2 (en) 2005-02-15 2009-01-27 Semiconductor Components Industries, L.L.C. Semiconductor device having deep trench charge compensation regions and method
US7253477B2 (en) * 2005-02-15 2007-08-07 Semiconductor Components Industries, L.L.C. Semiconductor device edge termination structure
US7285823B2 (en) * 2005-02-15 2007-10-23 Semiconductor Components Industries, L.L.C. Superjunction semiconductor device structure
US7176524B2 (en) * 2005-02-15 2007-02-13 Semiconductor Components Industries, Llc Semiconductor device having deep trench charge compensation regions and method
EP1696490A1 (en) * 2005-02-25 2006-08-30 STMicroelectronics S.r.l. Charge compensation semiconductor device and relative manufacturing process
US7714381B2 (en) * 2005-04-01 2010-05-11 Semiconductor Components Industries, Llc Method of forming an integrated power device and structure
JP2008536316A (ja) 2005-04-06 2008-09-04 フェアチャイルド・セミコンダクター・コーポレーション トレンチゲート電界効果トランジスタおよびその形成方法
US20090026586A1 (en) * 2005-04-22 2009-01-29 Icemos Technology Corporation Superjunction Device Having Oxide Lined Trenches and Method for Manufacturing a Superjunction Device Having Oxide Lined Trenches
GB0508407D0 (en) * 2005-04-26 2005-06-01 Ami Semiconductor Belgium Bvba Alignment of trench for MOS
US20060255401A1 (en) * 2005-05-11 2006-11-16 Yang Robert K Increasing breakdown voltage in semiconductor devices with vertical series capacitive structures
US7238577B1 (en) 2005-05-18 2007-07-03 National Semiconductor Corporation Method of manufacturing self-aligned n and p type stripes for a superjunction device
US8084815B2 (en) * 2005-06-29 2011-12-27 Fairchild Korea Semiconductor Ltd. Superjunction semiconductor device
JP2007012858A (ja) * 2005-06-30 2007-01-18 Toshiba Corp 半導体素子及びその製造方法
EP1742259A1 (en) * 2005-07-08 2007-01-10 STMicroelectronics S.r.l. Semiconductor power device with multiple drain structure and corresponding manufacturing process
US7282765B2 (en) * 2005-07-13 2007-10-16 Ciclon Semiconductor Device Corp. Power LDMOS transistor
US8692324B2 (en) * 2005-07-13 2014-04-08 Ciclon Semiconductor Device Corp. Semiconductor devices having charge balanced structure
US7589378B2 (en) * 2005-07-13 2009-09-15 Texas Instruments Lehigh Valley Incorporated Power LDMOS transistor
TWI251922B (en) * 2005-07-14 2006-03-21 Siliconware Precision Industries Co Ltd Multichip stack structure
US20070012983A1 (en) * 2005-07-15 2007-01-18 Yang Robert K Terminations for semiconductor devices with floating vertical series capacitive structures
US8110868B2 (en) 2005-07-27 2012-02-07 Infineon Technologies Austria Ag Power semiconductor component with a low on-state resistance
US8461648B2 (en) 2005-07-27 2013-06-11 Infineon Technologies Austria Ag Semiconductor component with a drift region and a drift control region
EP1908119B1 (de) 2005-07-27 2012-04-18 Infineon Technologies Austria AG Halbleiterbauelement mit einer driftzone und einer driftsteuerzone
DE102006009942B4 (de) * 2006-03-03 2012-02-09 Infineon Technologies Austria Ag Laterales Halbleiterbauelement mit niedrigem Einschaltwiderstand
US7385248B2 (en) 2005-08-09 2008-06-10 Fairchild Semiconductor Corporation Shielded gate field effect transistor with improved inter-poly dielectric
US7235845B2 (en) * 2005-08-12 2007-06-26 Ciclon Semiconductor Device Corp. Power LDMOS transistor
US7420247B2 (en) * 2005-08-12 2008-09-02 Cicion Semiconductor Device Corp. Power LDMOS transistor
US7446018B2 (en) * 2005-08-22 2008-11-04 Icemos Technology Corporation Bonded-wafer superjunction semiconductor device
JP5002148B2 (ja) * 2005-11-24 2012-08-15 株式会社東芝 半導体装置
US7928470B2 (en) * 2005-11-25 2011-04-19 Denso Corporation Semiconductor device having super junction MOS transistor and method for manufacturing the same
JP4996848B2 (ja) * 2005-11-30 2012-08-08 株式会社東芝 半導体装置
US7378317B2 (en) * 2005-12-14 2008-05-27 Freescale Semiconductor, Inc. Superjunction power MOSFET
DE102006001922B3 (de) * 2006-01-14 2007-05-03 Infineon Technologies Austria Ag Lateraler Leistungstransistor und Verfahren zu dessen Herstellung
DE102006002065B4 (de) * 2006-01-16 2007-11-29 Infineon Technologies Austria Ag Kompensationsbauelement mit reduziertem und einstellbarem Einschaltwiderstand
US7492003B2 (en) * 2006-01-24 2009-02-17 Siliconix Technology C. V. Superjunction power semiconductor device
US7595542B2 (en) * 2006-03-13 2009-09-29 Fairchild Semiconductor Corporation Periphery design for charge balance power devices
US7446375B2 (en) * 2006-03-14 2008-11-04 Ciclon Semiconductor Device Corp. Quasi-vertical LDMOS device having closed cell layout
US7446374B2 (en) 2006-03-24 2008-11-04 Fairchild Semiconductor Corporation High density trench FET with integrated Schottky diode and method of manufacture
US7592668B2 (en) * 2006-03-30 2009-09-22 Fairchild Semiconductor Corporation Charge balance techniques for power devices
JP2007281034A (ja) * 2006-04-03 2007-10-25 Toshiba Corp 電力用半導体素子
DE102006025218B4 (de) * 2006-05-29 2009-02-19 Infineon Technologies Austria Ag Leistungshalbleiterbauelement mit Ladungskompensationsstruktur und Verfahren zur Herstellung desselben
US7679146B2 (en) * 2006-05-30 2010-03-16 Semiconductor Components Industries, Llc Semiconductor device having sub-surface trench charge compensation regions
US7411266B2 (en) * 2006-05-30 2008-08-12 Semiconductor Components Industries, L.L.C. Semiconductor device having trench charge compensation regions and method
EP1863096B1 (en) * 2006-05-30 2017-07-19 Nissan Motor Company Limited Semiconductor device and method of manufacturing the same
US7319256B1 (en) 2006-06-19 2008-01-15 Fairchild Semiconductor Corporation Shielded gate trench FET with the shield and gate electrodes being connected together
US7944018B2 (en) 2006-08-14 2011-05-17 Icemos Technology Ltd. Semiconductor devices with sealed, unlined trenches and methods of forming same
US7598517B2 (en) * 2006-08-25 2009-10-06 Freescale Semiconductor, Inc. Superjunction trench device and method
US7510938B2 (en) * 2006-08-25 2009-03-31 Freescale Semiconductor, Inc. Semiconductor superjunction structure
US7651918B2 (en) * 2006-08-25 2010-01-26 Freescale Semiconductor, Inc. Strained semiconductor power device and method
US7799640B2 (en) * 2006-09-28 2010-09-21 Semiconductor Components Industries, Llc Method of forming a semiconductor device having trench charge compensation regions
JP5135759B2 (ja) * 2006-10-19 2013-02-06 富士電機株式会社 超接合半導体装置の製造方法
KR101279574B1 (ko) * 2006-11-15 2013-06-27 페어차일드코리아반도체 주식회사 고전압 반도체 소자 및 그 제조 방법
DE102006055742B4 (de) * 2006-11-25 2011-07-14 Infineon Technologies Austria Ag Halbleiterbauelementanordnung mit mehreren zu einer Driftzone benachbart angeordneten Steuerelektroden
DE102006061994B4 (de) * 2006-12-21 2011-05-05 Infineon Technologies Austria Ag Ladungskompensationsbauelement mit einer Driftstrecke zwischen zwei Elektroden und Verfahren zur Herstellung desselben
JP5096739B2 (ja) 2006-12-28 2012-12-12 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US7795671B2 (en) 2007-01-04 2010-09-14 Fairchild Semiconductor Corporation PN junction and MOS capacitor hybrid RESURF transistor
US8058682B2 (en) 2007-01-09 2011-11-15 Maxpower Semiconductor Inc. Semiconductor device
US8564057B1 (en) 2007-01-09 2013-10-22 Maxpower Semiconductor, Inc. Power devices, structures, components, and methods using lateral drift, fixed net charge, and shield
JP2008182054A (ja) * 2007-01-25 2008-08-07 Toshiba Corp 半導体装置
US7723172B2 (en) * 2007-04-23 2010-05-25 Icemos Technology Ltd. Methods for manufacturing a trench type semiconductor device having a thermally sensitive refill material
US8580651B2 (en) * 2007-04-23 2013-11-12 Icemos Technology Ltd. Methods for manufacturing a trench type semiconductor device having a thermally sensitive refill material
US20080272429A1 (en) * 2007-05-04 2008-11-06 Icemos Technology Corporation Superjunction devices having narrow surface layout of terminal structures and methods of manufacturing the devices
JP5217257B2 (ja) * 2007-06-06 2013-06-19 株式会社デンソー 半導体装置およびその製造方法
DE102007044209A1 (de) 2007-09-17 2009-03-19 Infineon Technologies Austria Ag Kompensationsbauelement mit versetzt angeordneten Kompensationszonen
EP2208229A4 (en) 2007-09-21 2011-03-16 Fairchild Semiconductor SUPER TRANSITION STRUCTURES FOR PERFORMANCE ARRANGEMENTS AND MANUFACTURING PROCESSES
DE102007045185A1 (de) * 2007-09-21 2009-04-02 Robert Bosch Gmbh Halbleitervorrichtung und Verfahren zu deren Herstellung
US8012806B2 (en) 2007-09-28 2011-09-06 Icemos Technology Ltd. Multi-directional trenching of a die in manufacturing superjunction devices
DE102007052202B3 (de) * 2007-10-30 2008-11-13 Infineon Technologies Austria Ag Halbleiterbauelement und Verfahren zur Herstellung desselben
US7875951B2 (en) * 2007-12-12 2011-01-25 Infineon Technologies Austria Ag Semiconductor with active component and method for manufacture
US7772668B2 (en) 2007-12-26 2010-08-10 Fairchild Semiconductor Corporation Shielded gate trench FET with multiple channels
US8159039B2 (en) 2008-01-11 2012-04-17 Icemos Technology Ltd. Superjunction device having a dielectric termination and methods for manufacturing the device
US7745846B2 (en) * 2008-01-15 2010-06-29 Ciclon Semiconductor Device Corp. LDMOS integrated Schottky diode
US7846821B2 (en) * 2008-02-13 2010-12-07 Icemos Technology Ltd. Multi-angle rotation for ion implantation of trenches in superjunction devices
US7795045B2 (en) * 2008-02-13 2010-09-14 Icemos Technology Ltd. Trench depth monitor for semiconductor manufacturing
US8030133B2 (en) * 2008-03-28 2011-10-04 Icemos Technology Ltd. Method of fabricating a bonded wafer substrate for use in MEMS structures
US20090267145A1 (en) * 2008-04-23 2009-10-29 Ciclon Semiconductor Device Corp. Mosfet device having dual interlevel dielectric thickness and method of making same
US7902075B2 (en) * 2008-09-08 2011-03-08 Semiconductor Components Industries, L.L.C. Semiconductor trench structure having a sealing plug and method
US9000550B2 (en) 2008-09-08 2015-04-07 Semiconductor Components Industries, Llc Semiconductor component and method of manufacture
US7960781B2 (en) * 2008-09-08 2011-06-14 Semiconductor Components Industries, Llc Semiconductor device having vertical charge-compensated structure and sub-surface connecting layer and method
US20120273916A1 (en) 2011-04-27 2012-11-01 Yedinak Joseph A Superjunction Structures for Power Devices and Methods of Manufacture
US8174067B2 (en) * 2008-12-08 2012-05-08 Fairchild Semiconductor Corporation Trench-based power semiconductor devices with increased breakdown voltage characteristics
US8304829B2 (en) * 2008-12-08 2012-11-06 Fairchild Semiconductor Corporation Trench-based power semiconductor devices with increased breakdown voltage characteristics
US9508805B2 (en) 2008-12-31 2016-11-29 Alpha And Omega Semiconductor Incorporated Termination design for nanotube MOSFET
US8227855B2 (en) * 2009-02-09 2012-07-24 Fairchild Semiconductor Corporation Semiconductor devices with stable and controlled avalanche characteristics and methods of fabricating the same
US8148749B2 (en) * 2009-02-19 2012-04-03 Fairchild Semiconductor Corporation Trench-shielded semiconductor device
US8299494B2 (en) * 2009-06-12 2012-10-30 Alpha & Omega Semiconductor, Inc. Nanotube semiconductor devices
US7910486B2 (en) * 2009-06-12 2011-03-22 Alpha & Omega Semiconductor, Inc. Method for forming nanotube semiconductor devices
US8049276B2 (en) * 2009-06-12 2011-11-01 Fairchild Semiconductor Corporation Reduced process sensitivity of electrode-semiconductor rectifiers
US8809949B2 (en) * 2009-06-17 2014-08-19 Infineon Technologies Austria Ag Transistor component having an amorphous channel control layer
US8318499B2 (en) * 2009-06-17 2012-11-27 Abbott Laboratories System for managing inventories of reagents
US8536659B2 (en) * 2009-07-30 2013-09-17 Polar Seminconductor, Inc. Semiconductor device with integrated channel stop and body contact
JP5741567B2 (ja) 2009-07-31 2015-07-01 富士電機株式会社 半導体装置
US8421196B2 (en) 2009-11-25 2013-04-16 Infineon Technologies Austria Ag Semiconductor device and manufacturing method
EP2530721A4 (en) 2010-01-29 2017-11-29 Fuji Electric Co., Ltd. Semiconductor device
US8841186B2 (en) 2010-03-04 2014-09-23 X-Fab Semiconductor Foundries Ag Manufacturing of a semiconductor device and corresponding semiconductor device
US8432000B2 (en) 2010-06-18 2013-04-30 Fairchild Semiconductor Corporation Trench MOS barrier schottky rectifier with a planar surface using CMP techniques
CN102299070A (zh) * 2010-06-22 2011-12-28 无锡华润上华半导体有限公司 横向pnp晶体管的制造方法
CN102299073A (zh) * 2010-06-25 2011-12-28 无锡华润上华半导体有限公司 Vdmos器件及其制作方法
CN102110716B (zh) 2010-12-29 2014-03-05 电子科技大学 槽型半导体功率器件
CN102148256B (zh) * 2011-03-21 2013-03-06 哈尔滨工程大学 一种栅增强功率半导体场效应晶体管
KR101106535B1 (ko) * 2011-04-15 2012-01-20 페어차일드코리아반도체 주식회사 전력용 반도체 소자 및 그 제조방법
US8786010B2 (en) 2011-04-27 2014-07-22 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8772868B2 (en) 2011-04-27 2014-07-08 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8673700B2 (en) 2011-04-27 2014-03-18 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
CN110010671B (zh) 2011-04-27 2022-04-29 飞兆半导体公司 功率器件及其制造方法
US8836028B2 (en) 2011-04-27 2014-09-16 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
CN102227000B (zh) * 2011-06-23 2013-02-27 西安电子科技大学 基于超级结的碳化硅mosfet器件及制备方法
US8633095B2 (en) 2011-06-30 2014-01-21 Infineon Technologies Austria Ag Semiconductor device with voltage compensation structure
DE102011080258A1 (de) * 2011-08-02 2013-02-07 Robert Bosch Gmbh Super-Junction-Schottky-Oxid-PiN-Diode
CN103000665B (zh) 2011-09-08 2015-08-19 上海华虹宏力半导体制造有限公司 超级结器件及制造方法
US8785306B2 (en) 2011-09-27 2014-07-22 Alpha And Omega Semiconductor Incorporated Manufacturing methods for accurately aligned and self-balanced superjunction devices
JP5915076B2 (ja) 2011-10-21 2016-05-11 富士電機株式会社 超接合半導体装置
US8946814B2 (en) 2012-04-05 2015-02-03 Icemos Technology Ltd. Superjunction devices having narrow surface layout of terminal structures, buried contact regions and trench gates
WO2014013888A1 (ja) 2012-07-19 2014-01-23 富士電機株式会社 半導体装置および半導体装置の製造方法
US9728660B2 (en) 2012-08-14 2017-08-08 The Curators Of The University Of Missouri Optically-triggered linear or avalanche solid state switch for high power applications
CN102832248A (zh) * 2012-09-10 2012-12-19 西安电子科技大学 基于半超结的碳化硅mosfet及制作方法
CN102832241B (zh) * 2012-09-14 2016-04-27 电子科技大学 一种具有横向p-n结复合缓冲层结构的氮化镓基异质结场效应晶体管
CN103681262B (zh) * 2012-09-17 2017-07-11 中国科学院微电子研究所 一种高度电荷平衡超结器件的制作方法
TWI470701B (zh) * 2012-12-13 2015-01-21 Pfc Device Holdings Ltd 用於半導體元件之超接面結構及其製程
US8823084B2 (en) 2012-12-31 2014-09-02 Infineon Technologies Austria Ag Semiconductor device with charge compensation structure arrangement for optimized on-state resistance and switching losses
JPWO2014112239A1 (ja) 2013-01-16 2017-01-19 富士電機株式会社 半導体素子
JP6197294B2 (ja) 2013-01-16 2017-09-20 富士電機株式会社 半導体素子
US9490322B2 (en) 2013-01-23 2016-11-08 Freescale Semiconductor, Inc. Semiconductor device with enhanced 3D resurf
US9035376B2 (en) 2013-02-14 2015-05-19 Fuji Electric Co., Ltd. Semiconductor device and method of manufacturing the same
JP6135178B2 (ja) 2013-02-25 2017-05-31 富士電機株式会社 超接合半導体装置の製造方法
US9166005B2 (en) 2013-03-01 2015-10-20 Infineon Technologies Austria Ag Semiconductor device with charge compensation structure
CN103151384A (zh) * 2013-03-07 2013-06-12 矽力杰半导体技术(杭州)有限公司 一种半导体装置及其制造方法
CN104347412A (zh) * 2013-08-01 2015-02-11 北大方正集团有限公司 Vvmos管的制作方法及vvmos管
US9147763B2 (en) 2013-09-23 2015-09-29 Infineon Technologies Austria Ag Charge-compensation semiconductor device
US9306045B2 (en) 2013-11-19 2016-04-05 United Microelectronics Corp. Semiconductor power device
TWI522012B (zh) * 2013-11-19 2016-02-11 碩頡科技股份有限公司 整合式光源驅動電路及應用其之光源模組
US9543379B2 (en) 2014-03-18 2017-01-10 Nxp Usa, Inc. Semiconductor device with peripheral breakdown protection
US9245754B2 (en) 2014-05-28 2016-01-26 Mark E. Granahan Simplified charge balance in a semiconductor device
JP6323556B2 (ja) 2014-07-04 2018-05-16 富士電機株式会社 半導体装置
US9887087B1 (en) * 2014-07-08 2018-02-06 Michael Keith Fuller Semiconductor and other materials by thermal neutron transmutation
CN104124276B (zh) * 2014-08-11 2020-04-24 深圳尚阳通科技有限公司 一种超级结器件及其制作方法
EP2996153B1 (en) * 2014-09-12 2019-05-22 Nxp B.V. Bipolar transistor and method of manufacturing the same
WO2016043247A1 (ja) * 2014-09-17 2016-03-24 富士電機株式会社 半導体装置
US9171949B1 (en) 2014-09-24 2015-10-27 Alpha And Omega Semiconductor Incorporated Semiconductor device including superjunction structure formed using angled implant process
US9431532B1 (en) 2015-02-13 2016-08-30 PowerWyse, Inc. System and method for fabricating high voltage power MOSFET
JP2017054959A (ja) * 2015-09-10 2017-03-16 株式会社東芝 半導体装置
DE102015116576B4 (de) * 2015-09-30 2021-11-25 Infineon Technologies Austria Ag Superjunction-Halbleitervorrichtung mit entgegengesetzt dotierten Halbleiterbereichen, die in Gräben ausgebildet sind, und Verfahren zur Herstellung
JP6448513B2 (ja) 2015-11-16 2019-01-09 株式会社東芝 半導体装置
CN106960868A (zh) * 2016-01-11 2017-07-18 电子科技大学 由半导体与含导电区域的绝缘体构成的半导体器件耐压区
DE102016109774B4 (de) 2016-05-27 2018-02-08 Infineon Technologies Austria Ag Halbleiterbauelemente und Verfahren zum Bilden eines Halbleiterbauelements
US9871135B2 (en) 2016-06-02 2018-01-16 Nxp Usa, Inc. Semiconductor device and method of making
DE102016114229B3 (de) 2016-08-01 2017-12-07 Infineon Technologies Austria Ag Transistorbauelement mit einer zwei schichten umfassenden feldelektrodeund sein herstellverfahren
CN106571394B (zh) 2016-11-01 2018-05-11 杭州士兰微电子股份有限公司 功率器件及其制造方法
JP6362152B1 (ja) * 2016-11-11 2018-07-25 新電元工業株式会社 Ｍｏｓｆｅｔ及び電力変換回路
US9905687B1 (en) 2017-02-17 2018-02-27 Nxp Usa, Inc. Semiconductor device and method of making
JP6362154B1 (ja) * 2017-05-26 2018-07-25 新電元工業株式会社 Ｍｏｓｆｅｔ及び電力変換回路
US10135357B1 (en) 2017-09-07 2018-11-20 Power Integrations, Inc. Threshold detection with tap
US10644102B2 (en) 2017-12-28 2020-05-05 Alpha And Omega Semiconductor (Cayman) Ltd. SGT superjunction MOSFET structure
US11031478B2 (en) 2018-01-23 2021-06-08 Infineon Technologies Austria Ag Semiconductor device having body contacts with dielectric spacers and corresponding methods of manufacture
US11056585B2 (en) 2018-04-20 2021-07-06 Ipower Semiconductor Small pitch super junction MOSFET structure and method
TWI655688B (zh) 2018-05-18 2019-04-01 英屬維爾京群商節能元件控股有限公司 具有超接面結構之半導體元件及其製程
CN113808944A (zh) * 2020-06-12 2021-12-17 芯恩（青岛）集成电路有限公司 超结功率器件及其制备方法
DE102020215331A1 (de) * 2020-12-04 2022-06-09 Robert Bosch Gesellschaft mit beschränkter Haftung Vertikaler Leistungstransistor
US20230051830A1 (en) * 2021-08-13 2023-02-16 Infineon Technologies Ag Semiconductor device and method of producing thereof
CN115241286B (zh) * 2022-09-21 2023-01-31 深圳平创半导体有限公司 一种SiC半超结结型栅双极型晶体管器件及其制作方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2089119A (en) * 1980-12-10 1982-06-16 Philips Electronic Associated High voltage semiconductor devices
EP0162942B1 (en) * 1984-05-30 1989-03-01 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. A semiconductor device for detecting electromagnetic radiation or particles
EP0332822A1 (de) * 1988-02-22 1989-09-20 Asea Brown Boveri Ag Feldeffektgesteuertes, bipolares Leistungshalbleiter-Bauelement sowie Verfahren zu seiner Herstellung

Also Published As

Publication number Publication date
US5216275A (en) 1993-06-01
CN1056018A (zh) 1991-11-06

Similar Documents

Publication Publication Date Title
CN1019720B (zh) 半导体功率器件
CN1040814C (zh) 一种用于半导体器件的表面耐压区
CN1035294C (zh) 具有异形掺杂岛的半导体器件耐压层
CN1244160C (zh) 半导体器件
CN1171318C (zh) 具有低导通电阻的高压功率金属氧化物半导体场效应晶体管
US6888195B2 (en) Semiconductor device with alternating conductivity type layers having different vertical impurity concentration profiles
CN1950948A (zh) 绝缘栅半导体器件
CN1528020A (zh) 具有较低栅极电荷结构的沟槽mosfet
CN1468449A (zh) 内含沟道型肖特基整流器的沟道型dmos晶体管
CN1650437A (zh) 带有均匀掺杂沟道的低压高密度沟槽栅极功率器件及其边缘终止技术
AT505499A2 (de) Ladungsgleichgewichts-isolierschicht- bipolartransistor
CN1812129A (zh) 半导体器件及其制造方法
CN1308774A (zh) 碳化硅水平沟道缓冲栅极半导体器件
JP2007116190A (ja) 半導体素子およびその製造方法
CN102479805A (zh) 一种超级结半导体元件及其制造方法
CN1663049A (zh) 横向半导体器件
CN1886837A (zh) 沟槽绝缘栅场效应晶体管
CN1677664A (zh) 静电放电保护器件及其制造方法
CN1663050A (zh) 具有边缘结构的半导体器件
CN1469487A (zh) 半导体器件
CN1274028C (zh) 具有减小导通电阻的双扩散场效应晶体管
CN87106746A (zh) 半导体元件
CN104218088A (zh) 基于折叠漂移区的soi耐压结构及功率器件
CN1799144A (zh) 半导体器件的端子结构及其制造方法
CN1809931A (zh) 沟槽mos结构

Legal Events

Date Code Title Description
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C06 Publication
PB01 Publication
C13 Decision
GR02 Examined patent application
C14 Grant of patent or utility model
GR01 Patent grant
C53 Correction of patent for invention or patent application
COR Change of bibliographic data

Free format text: CORRECT: PATENTEE; FROM: ELECTRONIC SCIENCE AND TECHNOLOGY UNIV. TO: DYNAMIC MOSS SOFITEL TECHNOLOGY CO., LTD.

CP03 Change of name, title or address

Address after: Texas in the United States

Patentee after: Dynamic Moss non technology limited liability company

Address before: 610054 No. two, Jianshe North Road, Chengdu, Sichuan, four

Patentee before: University of Electronic Science and Technology of China

C15 Extension of patent right duration from 15 to 20 years for appl. with date before 31.12.1992 and still valid on 11.12.2001 (patent law change 1993)
OR01 Other related matters
ASS Succession or assignment of patent right

Owner name: THREE-DIMENSIONAL SEMICONDUCTOR CO., LTD.

Free format text: FORMER OWNER: DYNAMIC MOSS SOFITEL TECHNOLOGY CO., LTD.

Effective date: 20021018

C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20021018

Address after: Arizona, USA

Patentee after: 3D semiconductor Limited by Share Ltd

Address before: Texas in the United States

Patentee before: Dynamic Moss non technology limited liability company

C17 Cessation of patent right
CX01 Expiry of patent term

Expiration termination date: 20110319

Granted publication date: 19930811