CN101989432B - 基于写命令偏置刷新区域计数器的磁盘驱动器 - Google Patents

基于写命令偏置刷新区域计数器的磁盘驱动器 Download PDF

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CN101989432B
CN101989432B CN201010243973.XA CN201010243973A CN101989432B CN 101989432 B CN101989432 B CN 101989432B CN 201010243973 A CN201010243973 A CN 201010243973A CN 101989432 B CN101989432 B CN 101989432B
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CN101989432A (zh
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C·S·蔡
S·黄
A·L·培
D·布鲁奈特
J·J·卡斯拉尼
K·W·吉本斯
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Western Digital Technologies Inc
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
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Abstract

本发明涉及基于写命令偏置刷新区域计数器的磁盘驱动器。本发明公开一种磁盘驱动器，其包括具有多个磁道的磁盘以及在磁盘上方被致动的磁头。多个刷新区域被限定，其中每个刷新区域对应于多个磁道。数据被写入到第一刷新区域，以及针对第二刷新区域的第一区域计数器以第一速率更新。数据被写入到第三刷新区域，以及针对第二刷新区域的第一区域计数器以不同于第一速率的第二速率更新。

Description

基于写命令偏置刷新区域计数器的磁盘驱动器
背景技术
磁盘驱动器包括磁盘和连接到致动臂远端的磁头，音圈电动机(VCM)使致动臂绕着枢轴旋转以在磁盘上方径向定位磁头。磁盘包括用于记录用户数据扇区的多个径向间隔的同轴磁道以及嵌入的伺服扇区。嵌入的伺服扇区包括磁头定位信息(例如磁道地址)，其由磁头读取并且由伺服控制系统处理以在寻道时控制致动臂的速度。
在写操作中，电流被施加到磁头的写入元件(例如写入线圈)以产生磁场，其通过定向磁粒的方向(例如在纵向磁记录中水平，或者在垂直磁记录中竖直)将磁盘的表面磁化。磁粒的定向呈现磁滞现象，由此当写入磁场被去除时产生其自身磁场。在读操作期间，磁头的读取元件(例如磁阻元件)将自磁盘表面发出的磁场转换为读取信号，其被解调为估计的数据序列。
磁粒的磁滞现象不是永久的，这意味着经过一段时间磁粒将定向为随机方向(磁熵)直至磁场不再被可靠地感测到(导致再生过程中的数据错误)。还有诸多因素可促成磁熵，诸如增高的环境温度。即，在较高的温度下，磁粒的一致取向将退化地更快。促成磁熵的另一因素是被称为相邻磁道干扰(ATI)的现象，其中当向目标磁道写入数据时，来自写入元件的边缘场使相邻磁道中记录的磁粒的一致取向退化。ATI对相邻磁道的退化效应随着每次对目标磁道的写操作而日益严重。最终，自磁盘表面发出的磁场将恶化到无法恢复数据的程度。
图1示出现有技术的磁盘格式2，其包括多个数据磁道4，这些数据磁道由绕每个数据磁道的圆周记录的同轴伺服扇区60-6N限定。每个伺服扇区6i包括用于记录周期模式的前导(preamble)8，其允许适当的增益调整以及读取信号的定时同步，以及存储用于同步到伺服数据字段12的具体模式的同步标记10。伺服数据字段12存储粗糙磁头定位信息，诸如伺服磁道地址，用于在寻道操作期间将磁头定位在目标数据磁道上。每个伺服扇区6i还包括多组伺服脉冲14(例如A、B、C和D脉冲)，包括以精确间隔和相对于数据磁道中心线的偏移记录的多个连续的转换。此伺服脉冲14组提供精细磁头定位信息，用于在写入/读取操作期间当访问数据磁道时进行中心线跟踪。
附图说明
图1示出现有技术磁盘格式，其包括由嵌入伺服扇区限定的多个磁道；
图2A示出根据本发明的一个实施例的磁盘驱动器，其包括在磁盘上方被致动的磁头以及控制电路；
图2B是根据本发明的一个实施例由控制电路执行的流程图，其中区域计数器以取决于写入数据的位置(刷新区域)的不同速率被更新；
图3A示出根据本发明的一个实施例的流程图，其中区域计数器以取决于写入区域相邻或不相邻的不同速率被更新；
图3B示出根据本发明的一个实施例的流程图，其中在写入数据到第一刷新区域之后，朝向磁盘内直径的第二刷新区域的区域计数器以第一速率被更新，以及朝向磁盘外直径的第三刷新区域的区域计数器以第二速率被更新；
图3C图示本发明的一个实施例，其中非相邻区域的区域计数器以较低的速率被更新，并且以取决于刷新区域朝向磁盘的内直径还是外直径的变化速率被更新；
图3D图示本发明的一个实施例，其中相邻和非相邻区域的区域计数器更新速率基于磁盘驱动器的环境温度变化；
图4A是根据本发明的一个实施例的流程图，其中区域计数器以基于写入类型的速率被更新；
图4B是根据本发明的一个实施例的流程图，其中区域计数器以基于其径向位置的不同速率被更新；
图4C图示本发明的一个实施例，其中刷新区域的区域计数器以取决于写入命令的逻辑块地址(LBA)的不同速率被更新；
图5A示出根据本发明的一个实施例的流程图，其中区域计数器以基于写入命令的块大小的不同速率被更新；
图5B示出根据本发明的一个实施例的流程图，其中区域计数器以基于写入命令是否是写入连续命令的不同速率被更新；
图5C示出根据本发明的一个实施例的流程图，其中区域计数器以基于写入命令是流式写入命令还是非流式写入命令的不同速率被更新；
图6A示出根据本发明的一个实施例用于更新区域计数器的等式；以及
图6B和6C示出根据本发明的一个实施例用于更新区域计数器的表格。
具体实施方式
图2A示出根据本发明的一个实施例的磁盘驱动器，其包括具有多个磁道18的磁盘16以及在磁盘16上方被致动的磁头20。多个刷新(refresh)区域被限定，其中每个刷新区域对应于多个磁道18。磁盘驱动器还包括可操作用于执行图2B的流程图的控制电路22，在图2B中数据被写入到第一刷新区域(步骤24)，以及第一区域计数器以第一速率被针对第二刷新区域更新(步骤26)。数据被写入到第三刷新区域(步骤28)，以及第二区域计数器以不同于第一速率的第二速率被针对第二刷新区域更新(步骤30)。
区域计数器用于刷新存储在对应的刷新区域的磁道中的数据。例如，当区域计数器超过阈值时，通过读取和重写存储在磁道中的数据来刷新对应的刷新区域。在一个实施例中，刷新区域的数据可以被读取和重写而无论数据的损坏(degradation)。在另一实施例中，刷新区域中的数据可以首先被扫描以确定重写是否是必要的。例如，仅仅在检测的错误校正码(ECC)错误的数量超出阈值的情况下才重写数据。
刷新操作可以被以任何适当的方式以及在任何适当的时间执行。在一个实施例中，刷新区域的区域计数器超出阈值之后可以立即在该刷新区域上执行刷新操作。在另一实施例中，可以设定在刷新区域的区域计数器超过阈值之后执行刷新区域，并且刷新操作可以在磁盘驱动器的空闲模式(当磁盘驱动器不处理从主机接收的访问命令时)期间执行。在又一实施例中，区域计数器可以用于对刷新操作提供优先级，从而具有较高区域计数器的刷新区域相对其它刷新区域被更快地刷新。
在本发明的各实施例中，每个区域计数器可以依一个或更多个因素以不同速率进行更新。在图2B的实施例中，由于相邻磁道干扰的不同影响，第一区域计数器的刷新速率基于对另一刷新区域的写入操作变化。例如，在以下描述的实施例中，更新速率可以取决于更新的刷新区域与被写入的刷新区域相邻还是非相邻，或者更新的刷新区域远离被写入的刷新区域朝向磁盘的内直径还是外直径。
在图2A的实施例中，磁盘16包括多个嵌入伺服扇区320-32N，其限定多个磁道18。每个伺服扇区32i包括磁头定位信息，诸如用于在寻道期间粗糙定位的磁道地址以及在写入/读取操作期间用于精细定位同时跟踪目标磁道的中心线的伺服脉冲。控制电路22处理从磁道20发出的读取信号34以解调伺服扇区为位置误差信号(PES)。使用合适的补偿滤波器滤波PES以产生施加到VCM 38的控制信号36，使致动臂40绕着枢轴在减小PES的方向旋转。
图3A示出根据本发明的一个实施例的流程图，其中在写入数据到第一刷新区域之后(步骤42)，相邻刷新区域的区域计数器被以第一速率更新(步骤44)，以及针对非相邻刷新区域的区域计数器被以第二速率更新(步骤46)。本实施例在图3C中图解说明，其中与目标(被写入)刷新区域相邻的外直径刷新区域被增加三，而非相邻刷新区域被增加二和一。在本实施例中，相邻磁道干扰对临近刷新区域的影响随着远离目标刷新区域的距离增加而消散。
图3B示出根据本发明的一个实施例的流程图，其中在写入数据到第一刷新区域之后(步骤48)，针对远离目标刷新区域的朝向内直径(ID)的刷新区域的区域计数器被以第一速率更新(步骤50)，以及针对远离目标刷新区域的朝向外直径(OD)的刷新区域的区域计数器被以第二速率更新(步骤52)。此实施例在图3C中图解说明，其中针对相邻OD刷新区域的区域计数器被增加三，而针对相邻ID刷新区域的区域计数器被增加二。在此实施例中，相邻磁道干扰对OD和ID的影响由于例如磁头的几何形状和/或倾斜角度而变化。
图3D图示本发明的实施例，其中邻近刷新区域的更新速率基于磁盘驱动器的环境温度变化。在图3D的示例中，与图3C相比，写入操作期间温度更低，因此在此实施例中受影响的刷新区域的范围缩小并且邻近的刷新区域的更新速率降低。在其他实施例中，仅仅邻近刷新区域的更新速率可以改变而被影响的刷新区域的范围保持不变。
图4A是根据本发明的一个实施例的流程图，其中在写入数据到第一刷新区域之后(步骤54)，对应的区域计数器以基于写入类型的速率被更新(步骤56)。存在可以以不同程度影响磁熵(magnetic entropy)的多种不同的写入类型，并且存在很少考虑对磁熵的影响的写入类型。在后一种情形中，可以较不频繁地更新区域计数器以避免与刷新数据有关的性能退化。
图4B示出根据本发明的一个实施例的流程图，其中在写入数据到第一刷新区域之后(步骤58)，对应的区域计数器以第一速率被更新(步骤60)，并且在写入数据到第二刷新区域之后(步骤62)，对应的区域计数器以第二速率被更新(步骤64)。此实施例的示例在图4C中图示，其中小的逻辑块地址(LBA)可以与写入到对应的刷新区域的更关键的数据关联，诸如操作系统数据，而较大的LBA可以与较不关键的数据关联。为了有助于防止关键数据的丢失，通过以较高速率更新区域计数器的方式更频繁地刷新对应于小LBA的刷新区域。
图5A是根据本发明的另一实施例的流程图，其中当接收写入命令时(步骤66)，写入命令的块大小被评估(步骤68)。具有第一块大小的写入命令以第一速率更新对应的一个或更多区域计数器(步骤70)，以及具有第二块大小的写入命令以第二速率更新对应的一个或更多区域计数器(步骤72)。例如，具有大的块大小的写入命令可以覆盖(overwrite)刷新区域的实质部分，并且由于覆盖数据类似于刷新操作，因此可以推迟针对该区域的刷新操作。在另一示例中，小的块大小写入可以指示数据更关键(例如操作系统数据)，而大的块大小写入可以指示数据较不关键(例如流式视频数据)。因此，具有小的块大小的写入命令可以更频繁地更新对应的一个或更多区域计数器以有助于确保更关键数据的完整性。
图5B示出根据本发明的一个实施例的流程图，其中当写入命令被接收时(步骤74)以及写入命令是“写入连续”命令(步骤76)时，对应的区域计数器以第一速率被更新(步骤78)，否则对应的区域计数器以第二速率被更新(步骤80)。写入连续命令意味着即使遇到写入错误仍将完成写入命令，指示对应的写入数据可能较不关键(例如流式视频数据)。
图5C示出根据本发明的一个实施例的流程图，其中当写入命令被接收时(步骤82)以及写入命令是流式命令(步骤84)时，对应的区域计数器以第一速率被更新(步骤86)，否则对应的区域计数器以第二速率被更新(步骤88)。相比于非流式命令“写入DMA”，流式命令的示例是“写入流式DMA”命令，其是高级技术附件(ATA)协议的一部分。
图6A示出根据本发明的一个实施例用于更新区域计数器的示例等式。通过添加根据使用模型函数Fn(UM)计算的偏移更新特定区域计数器ZCn。使用模型函数Fn(UM)是被数据保障值(data lifeguard value，DLGn)和温度系数f(Temp)缩放的写入命令类型(WCT)的函数。在图6A的实施例中，写入命令类型(WCT)被计算为不同类型之和，包括被系数C1缩放的LBA、被系数C2缩放的块大小(WB)、被系数C3缩放的区域计数器被更新的频率(Freq)以及被系数C4缩放的写入命令是否为流式命令(ST)。数据保障值(DLGn)代表相邻磁道干扰对磁熵的影响。在图6A的实施例中，可以采用任何适当的系数C5-C8以计算DLGn，其中随着刷新区域的相邻度减小，系数通常减小。例如，针对写入刷新区域的系数C5最高，针对相邻区域的系数C6比C5小，依次类推。
图6B和6C示出图解说明如何计算针对邻近目标(被写入)刷新区域(在本示例中为刷新区域8)的刷新区域的DLGn值的示例的表格。对于被写入的刷新区域(区域8)，系数C5用于更新针对刷新区域8的区域计数器。对于相邻刷新区域7和9，系数C6用于更新针对刷新区域7和9的区域计数器。对于相邻刷新区域10和11(朝向OD)，系数C7用于更新针对刷新区域10和11的区域计数器。因此，当在刷新区域8中执行写入命令时，刷新区域4到12被写入操作影响(经过ATI)，从而响应于写入命令使用以上描述的系数更新对应的区域计数器。
可以采用任何适当的控制电路来实现本发明各实施例的流程图，控制电路诸如任何合适的集成电路或电路。例如，可以在读取通道集成电路中或在与读取通道分离的组件(诸如磁盘控制器)中实现控制电路，或者可以由读取通道执行以上描述的特定步骤而由磁盘控制器执行其它步骤。在一个实施例中，读取通道和磁盘控制器实现为分离的集成电路，而在可替代的实施例中，读取通道和磁盘控制器被制造为单个集成电路或片上系统(SOC)。另外，控制电路可以包括实现为分离的集成电路、集成到读取通道或者磁盘控制器电路、或者集成到SOC的合适的预放大电路。
在一个实施例中，控制电路包括执行指令的微处理器，这些指令可操作用于使微处理器执行本文描述的流程图中的步骤。这些指令可以被存储在任何计算机可读介质中。在一个实施例中，这些指令可以存储在微处理器外部的非易失性半导体存储器中或者与SOC中的微处理器集成。在另一实施例中，这些指令被存储在磁盘中并且当磁盘驱动器被加电时被读入到易失性半导体存储器中。在又一实施例中，控制电路包括适当的逻辑电路，诸如状态机电路。

Claims (24)

1.一种磁盘驱动器，包括：
磁盘，其包括多个磁道；
磁头，其在所述磁盘上方被致动；以及
控制电路，其可操作用于：
限定多个刷新区域，其中每个刷新区域对应于多个所述磁道；
第一写入数据到第一刷新区域，以及以第一速率更新针对第二刷新区域的第一区域计数器；以及
第二写入数据到第三刷新区域，以及以不同于所述第一速率的第二速率更新针对所述第二刷新区域的所述第一区域计数器。
2.根据权利要求1所述的磁盘驱动器，其中所述控制电路还可操作用于响应所述第一写入数据到第一刷新区域以第三速率更新第四刷新区域的第二区域计数器。
3.根据权利要求2所述的磁盘驱动器，其中所述第三速率不同于所述第一速率。
4.根据权利要求2所述的磁盘驱动器，其中：
所述第二刷新区域与所述第一刷新区域相邻；并且
所述第四刷新区域不与所述第一刷新区域相邻。
5.根据权利要求2所述的磁盘驱动器，其中：
所述第二刷新区域位于远离所述第一刷新区域朝向所述磁盘的外直径；以及
所述第四刷新区域位于远离所述第一刷新区域朝向所述磁盘的内直径。
6.根据权利要求2所述的磁盘驱动器，其中所述第三速率基于所述磁盘驱动器的环境温度变化。
7.一种磁盘驱动器，包括：
磁盘，其包括多个磁道；
磁头，其在所述磁盘上方被致动；以及
控制电路，其可操作用于
限定多个刷新区域，其中每个刷新区域对应于多个所述磁道；
响应于第一写入命令写入数据到第一刷新区域；以及
基于所述第一写入命令的类型以第一速率更新针对所述第一刷新区域的第一区域计数器。
8.根据权利要求7所述的磁盘驱动器，其中所述第一写入命令的类型包括逻辑块地址范围。
9.根据权利要求8所述的磁盘驱动器，其中所述第一写入命令识别第一逻辑块地址范围，并且所述控制电路还可操作用于：
响应于识别第二逻辑块地址范围的第二写入命令写入数据到第二刷新区域；以及
以不同于所述第一速率的第二速率更新针对所述第二刷新区域的第二区域计数器。
10.根据权利要求7所述的磁盘驱动器，其中所述第一写入命令的类型包括所述第一写入命令的块大小。
11.根据权利要求7所述的磁盘驱动器，其中所述第一写入命令的类型包括写入连续命令，其指示当遇到写入错误时将完成所述第一写入命令。
12.根据权利要求7所述的磁盘驱动器，其中所述第一写入命令的类型包括非流式命令和流式命令之一。
13.一种磁盘驱动器的操作方法，所述磁盘驱动器包括具有多个磁道的磁盘以及在所述磁盘上方被致动的磁头，所述方法包括：
限定多个刷新区域，其中每个刷新区域对应于多个所述磁道；
第一写入数据到第一刷新区域，以及以第一速率更新针对第二刷新区域的第一区域计数器；以及
第二写入数据到第三刷新区域，以及以不同于所述第一速率的第二速率更新针对所述第二刷新区域的所述第一区域计数器。
14.根据权利要求13所述的方法，还包括响应于所述第一写入数据到第一刷新区域以第三速率更新第四刷新区域的第二区域计数器。
15.根据权利要求14所述的方法，其中所述第三速率不同于所述第一速率。
16.根据权利要求14所述的方法，其中
所述第二刷新区域与所述第一刷新区域相邻；并且
所述第四刷新区域不与所述第一刷新区域相邻。
17.根据权利要求14所述的方法，其中：
所述第二刷新区域位于远离所述第一刷新区域朝向所述磁盘的外直径；并且
所述第四刷新区域位于远离所述第一刷新区域朝向所述磁盘的内直径。
18.根据权利要求14所述的方法，其中所述第三速率基于所述磁盘驱动器的环境温度变化。
19.一种磁盘驱动器的操作方法，所述磁盘驱动器包括具有多个磁道的磁盘以及在所述磁盘上方被致动的磁头，所述方法包括：
限定多个刷新区域，其中每个刷新区域对应于多个所述磁道；
响应于第一写入命令写入数据到第一刷新区域；以及
基于所述第一写入命令的类型以第一速率更新针对所述第一刷新区域的第一区域计数器。
20.根据权利要求19所述的方法，其中所述第一写入命令的类型包括逻辑块地址范围。
21.根据权利要求20所述的方法，其中所述第一写入命令识别第一逻辑块地址范围，所述方法进一步包括：
响应于识别第二逻辑块地址范围的第二写入命令写入数据到第二刷新区域；以及
以不同于所述第一速率的第二速率更新针对所述第二刷新区域的第二区域计数器。
22.根据权利要求19所述的方法，其中所述第一写入命令的类型包括所述第一写入命令的块大小。
23.根据权利要求19所述的方法，其中所述第一写入命令的类型包括写入连续命令，其指示当遇到写入错误时将完成所述第一写入命令。
24.根据权利要求19所述的方法，其中所述第一写入命令的类型包括非流式命令和流式命令之一。
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