CN102007597B - 低温薄膜晶体管工艺、装置特性和装置稳定性改进 - Google Patents
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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Abstract
本发明提供了一种用以形成一薄膜晶体管的方法和设备。形成一栅极介电层,所述栅极介电层可以是双层的,第一层以一低速率沉积,而第二层则以一高速率沉积。在一些实施方式中,所述第一介电层是一富硅氮化硅层。形成一活性层,所述活性层也可以是双层的,第一活性层以一低速率沉积,而第二活性层则以一高速率沉积。本文所述的薄膜晶体管在受力时具有优良的迁移率和稳定度。
Description
发明背景
发明领域
本发明的实施方式一般涉及具有稳定电气性能的薄膜晶体管,以及这种晶体管的制造方法。
现有技术描述
薄膜晶体管(TFT)广泛用于制造许多尺寸和类型的平板显示器。一般来说,薄膜晶体管成层形成于基板上。一导电底部栅极层被一介电材料覆盖,以在该导电底部栅极层和随后形成的顶部栅极层之间,支持维持一电场。一半导体层通常形成在介电层上。半导体层作为电子的供应者,供应电子到晶体管沟道(channel),晶体管沟道是形成在活性层上的一被掺杂的半导体材料。顶部栅极触点形成在沟道层上。
在操作中,经由源极结和漏极结(junction),一栅极电压被施加于栅极,及一偏压被施加于沟道。栅极电压藉由介电层通过晶体管产生一电场。电场促使电子从活性层移动进入沟道层。当有足够的电子迁移时,电流流经沟道层。
为了确保操作TFT的可靠度,在活性层的电子迁移率是非常重要的。电子必须是自由的,以随时响应施加的栅极电压,从活性层迁移到沟道层。如果在活性层的电子迁移率下降,则在沟道产生电流所需的栅极电压增加,可能导致晶体管失效。此外,特性的稳定度,例如,热和电应力下的阈值电压对于操作的可靠度是非常关键的。
因此,持续需要性能稳定且具有高电子迁移率的薄膜晶体管。
发明内容
本发明的实施方式一般提供一薄膜晶体管,所述薄膜晶体管通过在一基板上沉积一介电层、活性层、掺杂活性层和导电层来形成。在一个实施方式中,所述介电层是双层的,所述介电层包含一富硅氮化硅层和一氮化硅层,其中所述富硅氮化硅层作为第一介电层,而所述氮化硅层作为第二介电层。在另一个实施方式中,所述活性层是双层的,所述活性层包含一第一非晶硅层和一第二非晶硅层,其中所述第一非晶硅层以一低沉积速率沉积,而所所述第二非晶硅层以一较高沉积速率沉积。在一些实施方式中,所述薄膜晶体管具有一至少约1.90的折射率、一至少约0.83:1的硅氮比率、以及一介于约18原子百分比和约21原子百分比之间的硅氢键的含量。
本发明的实施方式还提供一种用以形成一薄膜晶体管的方法,所述方法包含在一基板上顺序地形成一介电层、一活性层、一掺杂活性层和一导电层。在一些实施方式中,所述介电层是由两层组成,即一第一介电层和一第二介电层。在一些实施方式中,所述第一介电层是一富硅氮化硅层。在其它实施方式中,以一低于所述第二介电层的沉积速率形成所述第一介电层。在其他实施方式中,所述活性层是作为双层形成的,所述活性层包含一第一非晶硅层和一第二非晶硅层,其中所述第一非晶硅层以一低沉积速率沉积,而所述第二非晶硅层以一较高沉积速率沉积。
附图简要说明
所以,上述简介的本发明的特征可参考实施方式进一步理解和叙述,部分实施方式绘示于附图中。然而要指出的是,附图仅说明本发明的典型实施方式,因此不应被视为其范围的限制,本发明亦适用于其它具有同等功效的实施方式。
图1是一横截面图,绘示依据本发明的一个实施方式的一PECVD设备。
图2是一TFT结构的示意图。
图3是根据本发明的一个实施方式的一流程图。
为了便于理解,已经在可能的情况下,使用相同的元件符号指示各图式中共有的相同的元件。可以设想,在一个实施方式中所揭示的元件也可有利地用于其它实施方式,而无需特别指明。
详细描述
本发明的实施方式一般提供一薄膜晶体管(TFT)及所述TFT的制造方法。
图1是一横截面图,绘示依据本发明的一个实施方式的一PECVD设备。该设备包括一腔室100,在所述腔室100中可沉积一或更多个薄膜至一基板120上。可使用的一个合适的PECVD设备可购自位于美国加州圣克拉拉市(SantaClara,CA)的应用材料公司(Applied Materials,Inc.)。虽然下面的说明将根据PECVD设备进行描述,但应理解本发明也同样适用于其它处理腔室,包括那些由其它制造商生产的处理腔室。
腔室100一般包括腔壁102、一底部104、一喷头106和基座118,所述腔室100界定一处理容积(process volume)。处理容积可经由一狭缝阀门(slitvalve)开口108进入,以使基板120能被转移进和转移出腔室100。基座118可耦接至一致动器(actuator)116,以升高和降低基座118。贯穿基座118移动设置举升销(lift pin)122,以在放置到基座118之前和从基座118移除之后,支撑一基板120。基座118还可以包括加热和/或冷却元件124,以保持基座118在期望的温度。基座118可能还包括接地线(grounding strap)126,以在基座118周围提供射频接地。
喷头106通过一固定机构(fastening mechanism)150耦接至一背板112。喷头106可通过一或更多个耦合支架150耦接至背板112,以帮助防止凹陷(sag)和/或控制喷头106的平直度/曲率(straightness/curvature)。在一个实施方式中,十二个耦合支架150可用于耦接喷头106至背板112。耦合支架150可包括一固定机构,诸如,螺母和螺栓组件。在一个实施方式中,螺母和螺栓组件可由电绝缘材料(electrically insulating material)制成。在另一个实施方式中,螺栓可由金属制成并且由电绝缘材料包围。在另一个实施方式中,喷头106可车上螺纹以接收螺栓。在又一个实施方式中,螺母可由一电绝缘材料形成。电绝缘材料有助于防止耦合支架150电性耦合可能存在于腔室100的任何等离子体。此外和/或替代性地,可有一中心耦合机构将背板112耦接至喷头106。中心耦合机构可围绕一背板支撑环(未显示),并悬挂在一桥接组件(bridge assembly)(未显示)上。喷头106可通过托架(bracket)134另外耦接至背板112。托架134可能有壁架(ledge)136,用以设置喷头106。背板112可设置在壁架114上,壁架114耦接腔壁102,以密封腔室100。
一气源132耦接至背板112,以经由喷头106中的气道(gas passage)提供处理气体和清洁气体给基板120。处理气体流动穿过一远程等离子体源/射频扼流圈单元(choke unit)130。一真空泵110被耦接到腔室100的低于基座118的位置,以将处理容积保持在一预定的压力下。一射频电源128被耦接到背板112和/或喷头106,以提供一射频电流给喷头106。射频电流在喷头106和基座118之间产生一电场,以便可以从喷头106和基座118之间的气体产生等离子体。可以使用不同频率,例如,介于约0.3MHz和约200MHz之间的一频率。在一个实施方式中,以13.56MHz的频率提供射频电流。
在处理基板之间,可提供清洁气体给远程等离子体源/射频扼流圈单元130,以使远程等离子体生成,并被提供来清洁腔室100的部件。来自耦合到远程等离子体源/射频扼流圈130的微波源138的一微波电流可引发等离子体。清洁气体可进一步由提供给喷头106的射频电源128激发。合适的清洁气体包括但不限于NF3、F2和SF6。在基板120的顶面和喷头106之间的间距可介于约400密尔(mil)至约1200密尔之间。在一个实施方式中,间距可能介于约400密尔到约800密尔之间。
PECVD可用来沉积TFT的各层。图2是一示意图,绘示依据本发明的一个实施方式的一TFT结构200。TFT结构200包括一基板202,所述基板可以是其上可形成有含硅介电层的任何基板。基板202可以是导电的或非导电的,而且可以是刚性的或弹性的。在一些实施方式中,基板202可以是一玻璃基板。在其他实施方式中,基板202可以是一经掺杂或以其他方式处理的玻璃基板。TFT结构200进一步包括一第一介电层204、一底部栅极层206、一第二介电层208、一第一活性层210、一第二活性层212、一掺杂半导体层214、一金属层216和一钝化层218。
TFT结构200的第一介电层204一般沉积在基板202上,以一第一沉积速率沉积达一第一厚度。在许多实施方式中,TFT结构200的第一介电层204是一氮化硅层。在一些实施方式中,第一介电层204可以是一富硅氮化硅层,例如,具有一硅氮比大于约0.80:1.0的富硅氮化硅层。在另一个实施方式中,富硅氮化硅层可能有大于约0.83:1.0的硅氮比。在另一个实施方式中,富硅氮化硅层可能有大于约0.85:1.0的硅氮比。与人们普遍的认知相反,富硅氮化硅层是“不好的氮化物”层,目前已发现,在低温下由于增加结构中硅氢键的比例所造成的高缺陷密度,富硅氮化硅层可减少TFT沉积中负方向的阈值电压漂移。这些缺陷可作为电子阱,其中高密度电子阱被认为随时间推移可用来减少入侵到介电层的电子数。从而减少会随时间推移降低阈值电压的负方向的阈值电压漂移。
第一介电层204可沉积达一第一厚度,所述第一厚度介于约(埃)和约之间,诸如,和约之间,例如,约在第一介电层是一富硅氮化硅层的实施方式中,第一介电层204具有高于标准氮化硅薄膜的一折射率。标准氮化硅薄膜具有约1.8至1.9的折射率。相反地,富硅氮化硅薄膜具有约1.9或更高的折射率。在一些实施方式中,折射率可介于约1.92和约1.96之间。在一些实施方式中,富硅氮化硅层(例如,上文根据第一介电层204所述的富硅氮化硅层)可具有比氮氢键含量高的硅氢键。在其它实施方式中,硅氢键的含量可能低于氮氢键的含量。例如,在一些实施方式中,硅氢键的含量可介于约18原子百分比和约30原子百分比之间,诸如,约21原子百分比和约27原子百分比之间。在其它实施方式中,氮氢键的含量可能少于约20原子百分比,诸如,低于约18原子百分比。
TFT结构200的底部栅极层206一般沉积在第一介电层204的上面或内部。底部栅极层206一般包括一金属(诸如,铬,或金属合金,诸如铝钕合金),并沉积至介约和约之间的厚度。底部栅极层可以是一双层,所述双层包含可能相同或不同的两种金属或合金。例如,底部栅极层可以是一双层,所述双层包含铬和铝钕合金。
第二介电层208可包括含有硅、氧、氮、碳或上述元素的组合的一层。例如,第二介电层208可以是氮化硅、氧化硅或碳化硅。此外,在一些实施方式中,第二介电层可以是氧氮化硅、氧碳化硅或碳氮化硅。在第二介电层208是一氮化硅层的实施方式中,所述氮化硅层可能是一计量氮化硅层(stoichiometric silicon nitride layer),或是一富硅氮化硅层。在一些实施方式中,第二介电层208的组成可能实质上类似于第一介电层。在一些实施方式中,第二介电层208可能有大于第一介电层204的硅氮比。在一些实施方式中,第二介电层208可能有小于第一介电层204的硅氮比。第二介电层208通常沉积达一第二厚度,所述第二厚度介于约和约之间,诸如,介于约 和约之间,例如,约第二厚度一般小于第一厚度。
第一介电层和第二介电层共同构成一栅极介电层,所述栅极介电层具有低介电常数和良好的阻挡性能。此外,栅极介电层通过TFT支持良好的电子迁移率,并且随时间推移促进稳定的电气性能。因此,形成的第二介电层最好有一较低的湿蚀刻速率,所述湿蚀刻速率介于约和约之间,例如,介于约和约之间。
第一活性层210可以是一非晶硅层、一多晶硅层或一氢化非晶硅层。第一活性层210一般沉积达一第三厚度,所述第三厚度可介于约和约之间,例如,介于约和约之间,例如,约当向栅极施加电压时,第一活性层210一般将电子供应至掺杂半导体层214。第一活性层210可以是一半导体材料(诸如,硅或锗或硅锗混合物)、一掺杂半导体材料(诸如,n型掺杂或p型掺杂硅材料),或透明导电氧化物材料,诸如氧化锌。
第二活性层212也可能是一非晶硅层,沉积达一第四厚度,所述第四厚度介于约和约之间,例如,约至约例如,约 第四厚度通常大于第三厚度。第二活性层212可具有实质上类似于第一活性层210的组成。第二活性层212也可能是一半导体材料、一掺杂半导体材料或一透明导电氧化物,大体上如上所述。
掺杂半导体层214一般形成TFT 200的一源/漏区。掺杂半导体层214一般将是一n型掺杂或p型掺杂硅区域。例如,层214可以是一非晶硅区,所述非晶硅区以硼、磷或砷中的一或更多种掺杂。金属层216可被溅射到层214上,并在所述层214上形成钝化层218。钝化层218可以是氮化硅层。
本发明的实施方式还提供一种形成TFT的方法,所述方法类似于上文结合图2描述的形成TFT的方法。图3是一流程图,描述根据本发明一实施方式的方法300。在步骤302中,在一基板上沉积可能是一富硅氮化硅层的一第一介电层。在示例性实施方式中,其中第一介电层是一富硅氮化硅层,通过提供一基板至一处理腔室,诸如上文结合图1所述的处理腔室,来沉积第一介电层。提供第一气体混合物给处理腔室,并产生一等离子体以在基板上沉积第一介电层。气体混合物一般包含:一硅源和一氮源,其中所述硅源诸如硅烷(SiH4),所述氮源诸如氮气(N2)、氨(NH3)或氮氨的混合物。此外,氢源(例如,氢气(H2))和载气(诸如氩气(Ar))可补充第一气体混合物。在一些实施方式中,氨也可作为氢源。
一般情况下,气体混合物流进处理腔室的流率将取决于处理中基板的尺寸。在一些实施方式中,例如,在一示例性实施方式中,被处理的一基板具有68cm×88cm的尺寸,可提供流量介于约4,000sccm至约19,000sccm之间的第一气体混合物,例如,介于约7,000sccm至约11,000sccm之间,例如,约9,000sccm。在这样的实施方式中,SiH4气体的气流介于约300sccm到约900sccm之间,例如,约400sccm至约700sccm,例如,约550sccm。NH3气体的气流介于约600sccm到约2,400sccm之间,例如,约800sccm和约2,000sccm之间,例如,约1,200sccm。N2气体的气流介于约1,000sccm到约7,000sccm之间,例如,约1,000sccm至约4,000sccm之间,例如,约1,000sccm。H2气体的气流介于约3,000sccm到约9,000sccm之间,例如,约5,000sccm至约7,000sccm之间,例如,约6,000sccm。
在一些实施方式中,第一气体混合物的气流可被调整,输送到基板的区域。例如,在一示例性实施方式中,第一气体混合物可以特定的流速来提供,所述流速介于约0.8sccm/cm2至约3.1sccm/cm2之间,例如,约1.0sccm/cm2至约2.0sccm/cm2之间,例如,约1.4sccm/cm2。在这样的实施方式中,SiH4气体的气流介于约0.05sccm/cm2到约0.15sccm/cm2之间,例如,约0.07sccm/cm2和约0.11sccm/cm2之间,例如,约0.09sccm/cm2。NH3气体的气流介于约0.10sccm/cm2和约0.40sccm/cm2之间,例如,约0.16sccm/cm2至约0.24sccm/cm2之间,例如,约0.20sccm/cm2。N2气体的气流介于约0.17sccm/cm2到约1.1sccm/cm2之间,例如,约0.17sccm/cm2和约0.5sccm/cm2之间,例如,约0.17sccm/cm2。H2气体的气流介于约0.5sccm/cm2和约1.5sccm/cm2之间,例如,约0.7sccm/cm2和约1.3sccm/cm2之间,例如,约1.0sccm/cm2。
此外,在一些实施方式中,第一气体混合物的特征为:在NH3和SiH4(NH3:SiH4)之间的气体流速的比例约为0.7:1到约7.4:1,例如,约1.5:1到约3.0:1,例如,约2.2:1。在N2和SiH4(N2:SiH4)之间的气体流速的比例约为1:1到21:1,例如,约1.5:1到约10:1,例如,约2:1。在N2和NH3(N2:NH3)之间的气体流速的比例约为0.4:1到约11:1,例如,介于约0.6:1和约4:1之间,例如,约0.8:1。
一般在第一温度下沉积第一介电层,所述第一温度介于约150℃和约250℃之间,例如,约200℃。较低的沉积温度允许在各种基板上形成TFT。通常形成等离子体以增强沉积,并且通常通过施加射频功率至反应区以激发等离子体,其中射频功率是13.56MHz的频率,功率水平(power level)介于约2,000瓦(W)和约3,800W之间,例如,介于约2,400W和约3,200W之间,例如,约2,700W。在一些实施方式中,由RF所施加的特定功率可介于约0.30W/cm2和约0.70W/cm2之间,例如,约0.35W/cm2和约0.55W/cm2之间,例如,约0.45W/cm2。施加至第一气体混合物的功率与气流的比例一般介于约0.2W/sccm和约0.4W/sccm之间,例如,约0.33W/sccm。腔室内的压力一般维持在约4托(Torr)以下,例如,介于约1.0托和约3.0托之间,例如,约2.1托。在一些实施方式中,电极和基板之间的间距一般约介于约450密尔和1,000密尔之间,例如,约900密尔。这些条件导致第一介电层沉积的第一速率相对较高,例如,介于约和约之间,例如约第一介电层可沉积达一第一厚度,所述第一厚度介于约和约之间,例如,和约之间,例如,约
第二介电层形成于步骤304中。第二介电层可与第一介电层一样形成于相同的处理腔室中,或根据个别实施方式的特定需要形成在不同的处理腔室中。第二介电层可以是氮化硅、氧化硅或碳化硅。此外,在一些实施方式中,第二介电层可以是氧氮化硅、氧碳化硅或碳氮化硅。在示例性实施方式中,其中第二介电层是氮化硅层,第二介电层可以用大致相同的前驱物和工艺条件,通过类似于第一介电层的工艺来形成。在一些实施方式中,可改变前驱物水平(precursor level),以形成具有不同成分的层。例如,如上文结合图2所描述的,如果第一介电层是一富硅氮化硅层,而第二介电层是一氮化硅层,则硅源的流速可能会降低,或氮源的流速会增加,以达成期望的薄膜组成。
在一些实施方式中,可通过提供第二气体混合物给一处理腔室,以及产生一等离子体来沉积第二介电层,来形成第二介电层。第二气体混合物一般包含:一硅源和一氮源,所述硅源诸如硅烷(SiH4),所述氮源诸如氮气(N2)、氨(NH3)或氮氨的混合物。此外,一氢源(例如,氢气(H2))和一载气(诸如,氩气(Ar))可补充第二气体混合物。在一些实施方式中,氨也可作为氢源。
一般情况下,气体混合物流进处理腔室的流率将取决于处理中基板的尺寸。在一些实施方式中,例如,在一示例性实施方式中,被处理的一基板具有68cm×88cm的尺寸,可提供流量高于第一气体混合物流量的第二气体混合物,所述流量介于约8,000sccm至约20,000sccm之间,例如,介于约10,000sccm至约18,000sccm之间,例如,约14,000sccm。在一些实施方式中,第二气体混合物的流量比第一气体混合物的流量高20%和100%之间,例如,比第一气体混合物的流量高约60%至70%之间,例如,比第一气体混合物的流量高约65%。在其它实施方式中,可以流量小于第一气体混合物的流量来提供第二气体混合物。在上述具有特征基板尺寸的实施方式中,SiH4气体的气流介于约140sccm到约360sccm之间,例如,介于约200sccm和约420sccm之间,例如,约250sccm。NH3气体的气流介于约600sccm至约1700sccm之间,例如,介于约800sccm和约1,300sccm之间,例如,约1,050sccm。N2气体的气流介于约4,000sccm至约10,000sccm之间,例如,介于约6,000sccm和约8,000sccm之间,例如,约7,000sccm。在这个实施方式中,H2气体的气流介于约3,500sccm到约8,500sccm之间,例如,约4,500sccm和约7,500sccm之间,例如,约6,000sccm。
在一些实施方式中,第二气体混合物的特定流速介于约1.4sccm/cm2和约3.3sccm/cm2之间,例如,约2.0sccm/cm2和约2.8sccm/cm2之间,例如,约2.4sccm/cm2。SiH4气体的特定流速介于约0.02sccm/cm2到约0.07sccm/cm2之间,例如,介于约0.03sccm/cm2和约0.05sccm/cm2之间,例如,约0.04sccm/cm2。NH3气体的特定流速介于约0.10sccm/cm2到约0.30sccm/cm2之间,例如,介于约0.14sccm/cm2和约0.22sccm/cm2之间,例如,约0.18sccm/cm2。N2气体的特定流速介于约0.7sccm/cm2到约1.7sccm/cm2之间,例如,介于约0.9sccm/cm2和约1.5sccm/cm2之间,例如,约1.2sccm/cm2。H2气体的特定流速介于约0.5sccm/cm2和约1.4sccm/cm2之间,例如,介于约0.8sccm/cm2和约1.2sccm/cm2之间,例如,约1.0sccm/cm2。
此外,在一些实施方式中,第二气体混合物具有的特征为:NH3和SiH4(NH3:SiH4)的气体流速比例介于约1:1至约12:1之间,例如,介于约2:1和约6:1之间,例如约4:1。在N2和SiH4(N2:SiH4)间的气体流速的比例介于约10:1到约70:1之间,例如,介于约25:1到约35:1之间,例如,约30:1。在N2和NH3(N2:NH3)间的气体流速的比例介于约2:1到约16:1之间,例如,介于约4:1和约11:1之间,例如,约6.5:1。通常以速率小于第一介电层的速率来沉积第二介电层。
第二介电层一般将在与第一温度大体上相同的第二温度下沉积,所述温度介于约150℃和约250℃之间,例如,大约200℃。通常用一等离子体来加强沉积,且通常通过施加射频功率激发至反应区,其中采用13.56MHz的频率,以及介于约900瓦(W)和2,100W之间的功率水平,例如,功率水平介于约1,200W和约1,800W之间,例如,约1,500W。在第二介电层的一些实施方式中,由RF所施加的特定功率可介于约0.15W/cm2和约0.35W/cm2之间,例如,约0.20W/cm2和约0.30W/cm2之间,例如,约0.25W/cm2。施加至第二气体混合物的功率与气流的比例一般介于约0.09W/sccm和约0.11W/sccm之间,例如,约0.10W/sccm。腔室内的压力一般维持在约4托以下,例如,介于约0.6托和约2.0托之间,例如,约1.0托。在一些实施方式中,电极和基板之间的间距一般约介于450密尔和900密尔之间,例如,约600密尔。这些条件通常导致第二介电层的沉积速率低于第一介电层的沉积速率。在一些实施方式中,第二介电层可以第一介电层沉积速率的约40%和约60%之间的速率沉积。在如上所述的示例性实施方式中,第二介电层的沉积速率将介于约和约之间,例如,介于约和约之间,例如,约
在实施方式中,其中第二介电层是一氮化硅层,所述氮化硅层可能是一计量氮化硅层,或一富硅氮化硅层。在一些实施方式中,第二介电层的组成可能实质上类似于第一介电层。在一些实施方式中,第二介电层可能具有大于第一介电层的硅氮比。在其它实施方式中,第二介电层可能具有小于第一介电层的硅氮比。第二介电层通常沉积达一第二厚度,所述第二厚度介于约和约之间,例如,介于约和约之间,例如,约第二厚度一般小于第一厚度。
一第一活性层形成于步骤306中。第一活性层可能是一非晶硅层、一多晶硅层、一氢化非晶硅层或一透明导电氧化物层,例如,氧化锌,如上文中参照图2所述。第一活性层可以是一半导体材料,例如,硅或锗;或一掺杂半导体材料,例如,一n型或P型掺杂硅材料。在一示例性实施方式中,其中第一活性层是一非晶硅层,一第三气体混合物被提供至一处理腔室,所述处理腔室可以是用来形成先前介电层的相同处理腔室。第三气体混合物包括一硅源,诸如硅烷、烷基硅烷、硅氧烷、硅氮烷、硅醇(silanol)或其它线性或环状硅源。第三气体混合物也可能包括与硅源不同的氢源,例如,氢气。
在一示例性实施方式中,其中硅源是硅烷(SiH4),而氢源是氢气(H2),以及基板的尺寸相同于上述实施方式,第三气体混合物的流量可以是介于约5,000sccm至约35,000sccm之间,例如,介于约7,000sccm至约20,000sccm之间,例如,约11,000sccm。SiH4气体的气流介于约400sccm至约1,400sccm之间,例如,介于约600sccm和约1,000sccm之间,例如,约800sccm。H2气体的气流介于约4,000sccm至约30,000sccm之间,例如,介于约7,000sccm和约13,000sccm之间,例如,约10,000sccm。
在一些实施方式中,第三气体混合物的特定流速介于约0.8sccm/cm2和约6.0sccm/cm2之间,例如,介于约1.5sccm/cm2和约2.5sccm/cm2之间,例如,约1.8sccm/cm2。SiH4气体的特定流速介于约0.08sccm/cm2和约0.22sccm/cm2之间,例如,介于约0.12sccm/cm2和约0.16sccm/cm2之间,例如,约0.14sccm/cm2。H2气体的特定流速介于约0.8sccm/cm2和约5.0sccm/cm2之间,例如,介于约1.2sccm/cm2和约2.5sccm/cm2之间,例如,约1.7sccm/cm2。此外,在H2和SiH4(H2:SiH4)之间的气流比例介于约4:1和约60:1之间,例如,约12:1。
在一些实施方式中,第一活性层一般将在类似于上述层的温度下沉积,所述温度介于约150℃和约250℃之间,例如,大约200℃。等离子体的使用一般被施加以13.56MHz的射频功率,功率水平介于约100W和约700W之间,例如,介于约300W和约500W之间,例如,约350W。在一些实施方式中,特定功率将介于约0.017W/cm2和约0.12W/cm2之间,例如,介于约0.030W/cm2和约0.070W/cm2之间,例如,约0.057W/cm2。施加至第三气体混合物的功率与气流的比例一般将介于约0.01W/sccm和约0.04W/sccm之间,例如,约0.03W/sccm。处理压力维持在约5托以下,例如,介于约1.0托和约5.0托之间,例如,约2.5托。在一些实施方式中,电极和基板之间的间距一般介于约400密尔和900密尔之间,例如,约550密尔。这些条件通常导致第一活性层的较低的沉积速率。整体而言,一较低的沉积速率是有吸引力的,因为可以保持活性层的电子迁移率。在如上所述的示例性实施方式中,第一活性层的沉积速率将介于约和约之间,例如,约在一些实施方式中,第一活性层沉积达一第三厚度,所述第三厚度介于约 和约之间,例如,介于约和约之间,例如,约
第二活性层形成于步骤308中。第二活性层可以是一非晶硅层、一多晶硅层、一氢化非晶硅层或一透明导电氧化物层,例如,氧化锌,如上文中参照图2所述。第二活性层可以是一半导体材料,例如,硅或锗;或一掺杂半导体材料,例如,一n型或P型掺杂硅材料。在一示例性实施方式中,其中第二活性层是一非晶硅层,一第四气体混合物被提供至一处理腔室,所述处理腔室可以与用来形成先前介电层和活性层的处理腔室相同或不同。第四气体混合物包括一硅源,例如,硅烷、烷基硅烷、硅氧烷、硅氮烷、硅醇或其它硅源。第四气体混合物也可能包括与硅源不同的氢源,例如,氢气。
在一示例性实施方式中,其中硅源是硅烷(SiH4),而氢源是氢气(H2),以及基板的尺寸例示于上述实施方式中,第四气体混合物的流量可以是介于约3,000sccm至约12,000sccm之间,例如,介于约6,000sccm至约8,000sccm之间,例如,约7,000sccm。SiH4气体的气流介于约500sccm至约2,200sccm之间,例如,介于约700sccm和约1,100sccm之间,例如,约900sccm。H2气体的气流介于约3,000sccm到约10,000sccm,例如,介于约5,000sccm至约7,000sccm之间,例如,约6,000sccm。
在一些实施方式中,第四气体混合物的特定流速介于约0.5sccm/cm2和约2.0sccm/cm2之间,例如,介于约0.9sccm/cm2和约1.3sccm/cm2之间,例如,约1.1sccm/cm2。SiH4气体的特定流速介于约0.08sccm/cm2和约0.40sccm/cm2之间,例如,介于约0.13sccm/cm2和约0.20sccm/cm2之间,例如,约0.15sccm/cm2。H2气体的特定流速介于约0.4sccm/cm2和约1.6sccm/cm2之间,例如,介于约0.8sccm/cm2和1.2sccm/cm2之间,例如,约1.0sccm/cm2。此外,在H2和SiH4(H2:SiH4)之间的气流比例介于约1:1至约18:1之间,例如,约7:1。
在一些实施方式中,第二活性层一般将在类似于上述层的温度下沉积,所述温度介于约150℃和约250℃之间,例如,大约200℃。等离子体的使用一般被施加以13.56MHz的射频功率,功率水平介于约400W和约2,000W之间,例如,介于约500W和约900W之间,例如,约750W。在一些实施方式中,特定功率可介于约0.07W/cm2和约0.40W/cm2之间,例如,介于约0.09W/cm2和约0.20W/cm2之间,例如,约0.12W/cm2。施加至第四气体混合物的功率与气流的比例一般将介于约0.05W/sccm和约0.15W/sccm之间,例如,约0.11W/sccm。处理压力维持在约5托以下,例如,介于约1.0托和约5.0托之间,例如,约2.1托。在一些实施方式中,电极和基板之间的间距一般介于约400密尔和约900密尔之间,例如,约500密尔。这些条件通常导致第二活性层的相对较高的沉积速率。第二活性层的沉积速率一般高于第一活性层,并可能会高于或低于第一或第二介电层的沉积速率。在如上所述的示例性实施方式中,第二活性层的沉积速率将介于约和约之间,例如,约在一些实施方式中,第二活性层沉积达一第四厚度,所述第四厚度可介于约和约之间,例如,介于约和约之间,例如,约
在步骤310中,一含掺杂硅层沉积于第二活性层之上。含掺杂硅层可以是n型掺杂或P型掺杂的非晶硅层。在其它实施方式中,含掺杂硅层可以是一混合硅锗层,以n型或p型掺杂物来掺杂。掺杂硅层可作为一晶体管的沟道层,例如,上文中参照图2讨论的薄膜晶体管。使用的掺杂物可选自包含下列元素的群组:硼、磷、砷、以及上述元素的组合。在一示例性实施方式中,其中含掺杂硅层是一n型掺杂非晶硅层,第五气体混合物被提供至一处理腔室,所述处理腔室可以与用来形成先前介电层和活性层的处理腔室相同或不同。第五气体混合物包括一硅源,例如,硅烷、烷基硅烷、硅氧烷、硅氮烷、硅醇或其它具有n型掺杂物的硅源。在一示例性实施方式中,n型掺杂物可以是一含磷前驱物,例如,磷化氢(PH3)或低聚物磷化氢。第五气体混合物也可包括与硅源不同的氢源,例如,氢气。
在一示例性实施方式中,其中硅源是硅烷(SiH4),而氢源是氢气(H2),以及掺杂物前驱物是磷化氢(PH3),而基板的尺寸例示于上述实施方式中,第五气体混合物的流速可以是介于约3,000sccm至约20,000sccm之间,例如,介于约6000sccm和约17,000sccm之间,例如,约11,500sccm。SiH4气体的气流介于约500sccm至约1,400sccm之间,例如,介于约700sccm和约1,100sccm之间,例如,约900sccm。H2气体的气流介于约3,000sccm到约15,000sccm之间,例如,介于约5,000sccm至约13,000sccm之间,例如,约9,500sccm。PH3气体的气体流量介于约100sccm和约3,000sccm之间,例如,介于约300sccm和约2,000sccm之间,例如,约1,000sccm。
在一些实施方式中,第五气体混合物的特定流速介于约0.6sccm/cm2和约2.0sccm/cm2之间,例如,介于约0.9sccm/cm2和约1.9sccm/cm2之间,例如,约1.9sccm/cm2。SiH4气体的特定流速介于约0.08sccm/cm2和约0.24sccm/cm2之间,例如,介于约0.11sccm/cm2和约0.17sccm/cm2之间,例如,约0.14sccm/cm2。H2气体的特定流速介于约0.5sccm/cm2和约2.5sccm/cm2之间,例如,介于约1.0sccm/cm2和约2.0sccm/cm2之间,例如,约1.5sccm/cm2。PH3气体的特定流速介于约0.03sccm/cm2和约0.5sccm/cm2之间,例如,介于约0.04sccm/cm2和约0.30sccm/cm2之间,例如,约0.17sccm/cm2。此外,H2和SiH4(H2:SiH4)之间的气体流速比例介于约2:1至约36:1之间,例如约13:1,并且H2和PH3之间的气体流速比例一般约10:1(即,PH3占有约H2体积的0.5%)。
在一些实施方式中,含掺杂硅层一般在类似于上述层的温度下沉积,所述温度介于约150℃和约250℃之间,例如,大约200℃。等离子体的使用一般被施加以13.56MHz的射频功率,功率水平介于约100W和约600W之间,例如,介于约200W和约500W之间,例如,约350W。在一些实施方式中,特定功率可介于约0.01W/cm2和约0.10W/cm2之间,例如,介于约0.03W/cm2和约0.08W/cm2之间,例如,约0.06W/cm2。施加至第五气体混合物的功率与气流的比例一般介于约0.02W/sccm和约0.04W/sccm之间,例如,约0.03W/sccm。处理压力维持在约5托以下,例如,介于约1.5托和约5托之间,例如,约2.5托。在一些实施方式中,电极和基板之间的间距一般介于约400密尔和900密尔之间,例如,约550密尔。这些条件一般导致含掺杂硅层的沉积速率高于第一活性层,但低于第二活性层。在如上所述的示例性实施方式中,含掺杂硅层的沉积速率将介于约和约之间,例如,约 在一些实施方式中,含掺杂硅层将被沉积达一第五厚度,所述第五厚度介于约和约之间,例如,介于约和约之间,例如,约
在步骤312中,一导电层形成在含掺杂硅层上。该导电层可以是金属或金属合金,并且可根据本领域熟知的技艺通过溅射来沉积。一钝化层也可形成在导电层之上。在一些实施方式中,钝化层可以是一含硅和氮层,诸如,氮化硅,且也可通过本领域熟知技艺来形成。
取决于特定实施方式,方法300的步骤可执行在相同的处理腔室或不同的处理腔室中。在一些实施方式中,例如,在单一处理腔室中,执行步骤302-310可能是有利的。
实例
在一第一实例中,通过沉积一富硅氮化硅层在一基板上来形成一TFT,其中该基板上形成有一底栅极层。富硅氮化硅层被沉积的厚度达约一氮化硅层形成在相同处理腔室中,且形成在富硅氮化硅层上,达到约的深度。一第一非晶硅层形成在氮化硅层上,达到约的厚度。而后在同一处理腔室中,以较高沉积速率将非晶硅的一第二活性层沉积在该第一活性层上,达到厚度约再次在相同的腔室中,在上面沉积一掺杂非晶硅层达到约的厚度。而顶部已增加金属接触(metal contact)和钝化层。各种沉积步骤的工艺条件详列如下表1。
表1-实例1的工艺条件
由此产生的TFT显示出阈值电压0.10伏特、开启电流2.98微安培(μA)、截止电流4.05微微安培(pA)、迁移率0.8cm2/(V·S)、以及亚阈值摆幅(subthreshold swing)0.62V/dec。
表2和表3的工艺条件显示两个互相比较的实例。表4展示由此产生的TFT的特性。实例1产生的TFT的特性也包括在表4中,以便于比较。表5概述在80℃和+/-40V的栅极偏压时每一实例的偏压温度应力数据,所述表5展示相较于比较的实例已改善了实例1的阈值电压漂移。
表2-比较实例1的工艺条件
表3-比较实例2的工艺条件
表4-比较TFT的特性
样本 | 迁移率(cm2/(V·S)) | Vth(V) | Ioff(pA) | Ion(μA) | Ion/ioff | S(V/dec) |
实例1 | 0.73 | 1.40 | 0.11 | 5.60 | 5.09x107 | 0.71 |
比较1 | 0.70 | 1.30 | 1.70 | 5.50 | 3.24x106 | 0.73 |
比较2 | 0.8 | 0.90 | 0.37 | 6.50 | 1.76x107 | 0.67 |
表5-偏压温度应力数据
因此,此处所述的方法有利于通过控制栅极介电层和半导体层的薄膜特性,改善TFT装置的电子迁移率、稳定性和和均匀度。
虽然上文针对本发明的实施方式,但也可设计本发明的其它和进一步的实施方式而不偏离本发明的基本范围,本发明的范围由后附权利要求书所决定。
Claims (9)
2.如权利要求1所述的方法,其中所述第二速率低于所述第一速率。
3.如权利要求1所述的方法,其中所述富硅氮化硅层具有一硅氮比,所述硅氮比大于约0.83∶1。
4.如权利要求1所述的方法,其中所述富硅氮化硅层具有一硅氢键含量,所述硅氢键含量介于约18原子百分比和约30原子百分比之间。
5.如权利要求1所述的方法,其中所述富硅氮化硅层的厚度比所述氮化硅层厚。
6.如权利要求2所述的方法,其中所述富硅氮化硅层具有一硅氮比,所述硅氮比大于约0.83∶1。
8.如权利要求7所述的方法,其中所述富硅氮化硅层具有一硅氮比,所述硅氮比大于约0.83∶1。
9.如权利要求8所述的方法,其中所述富硅氮化硅层具有一硅氢键含量,所述硅氢键含量介于约18原子百分比和约30原子百分比之间。
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---|---|---|---|---|
US8986456B2 (en) | 2006-10-10 | 2015-03-24 | Asm America, Inc. | Precursor delivery system |
WO2009129391A2 (en) * | 2008-04-17 | 2009-10-22 | Applied Materials, Inc. | Low temperature thin film transistor process, device property, and device stability improvement |
US10378106B2 (en) | 2008-11-14 | 2019-08-13 | Asm Ip Holding B.V. | Method of forming insulation film by modified PEALD |
US9394608B2 (en) | 2009-04-06 | 2016-07-19 | Asm America, Inc. | Semiconductor processing reactor and components thereof |
US8883270B2 (en) | 2009-08-14 | 2014-11-11 | Asm America, Inc. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen—oxygen species |
US8877655B2 (en) | 2010-05-07 | 2014-11-04 | Asm America, Inc. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species |
US8802201B2 (en) | 2009-08-14 | 2014-08-12 | Asm America, Inc. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species |
US9312155B2 (en) | 2011-06-06 | 2016-04-12 | Asm Japan K.K. | High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules |
US9793148B2 (en) | 2011-06-22 | 2017-10-17 | Asm Japan K.K. | Method for positioning wafers in multiple wafer transport |
US10364496B2 (en) | 2011-06-27 | 2019-07-30 | Asm Ip Holding B.V. | Dual section module having shared and unshared mass flow controllers |
US10854498B2 (en) | 2011-07-15 | 2020-12-01 | Asm Ip Holding B.V. | Wafer-supporting device and method for producing same |
US20130023129A1 (en) | 2011-07-20 | 2013-01-24 | Asm America, Inc. | Pressure transmitter for a semiconductor processing environment |
CN102629555B (zh) * | 2011-10-11 | 2014-11-26 | 北京京东方光电科技有限公司 | 栅极绝缘层、tft、阵列基板、显示装置以及制备方法 |
US9341296B2 (en) | 2011-10-27 | 2016-05-17 | Asm America, Inc. | Heater jacket for a fluid line |
US9096931B2 (en) | 2011-10-27 | 2015-08-04 | Asm America, Inc | Deposition valve assembly and method of heating the same |
US9017481B1 (en) | 2011-10-28 | 2015-04-28 | Asm America, Inc. | Process feed management for semiconductor substrate processing |
US9005539B2 (en) | 2011-11-23 | 2015-04-14 | Asm Ip Holding B.V. | Chamber sealing member |
US9167625B2 (en) | 2011-11-23 | 2015-10-20 | Asm Ip Holding B.V. | Radiation shielding for a substrate holder |
US9202727B2 (en) | 2012-03-02 | 2015-12-01 | ASM IP Holding | Susceptor heater shim |
US8946830B2 (en) | 2012-04-04 | 2015-02-03 | Asm Ip Holdings B.V. | Metal oxide protective layer for a semiconductor device |
CN102664194B (zh) * | 2012-04-10 | 2015-01-07 | 深超光电(深圳)有限公司 | 薄膜晶体管 |
KR20130114996A (ko) * | 2012-04-10 | 2013-10-21 | 삼성디스플레이 주식회사 | 표시 장치 및 그 제조방법 |
US9029253B2 (en) | 2012-05-02 | 2015-05-12 | Asm Ip Holding B.V. | Phase-stabilized thin films, structures and devices including the thin films, and methods of forming same |
US8728832B2 (en) * | 2012-05-07 | 2014-05-20 | Asm Ip Holdings B.V. | Semiconductor device dielectric interface layer |
US8933375B2 (en) | 2012-06-27 | 2015-01-13 | Asm Ip Holding B.V. | Susceptor heater and method of heating a substrate |
US9558931B2 (en) | 2012-07-27 | 2017-01-31 | Asm Ip Holding B.V. | System and method for gas-phase sulfur passivation of a semiconductor surface |
US9117866B2 (en) | 2012-07-31 | 2015-08-25 | Asm Ip Holding B.V. | Apparatus and method for calculating a wafer position in a processing chamber under process conditions |
US9169975B2 (en) | 2012-08-28 | 2015-10-27 | Asm Ip Holding B.V. | Systems and methods for mass flow controller verification |
US9659799B2 (en) | 2012-08-28 | 2017-05-23 | Asm Ip Holding B.V. | Systems and methods for dynamic semiconductor process scheduling |
US9021985B2 (en) | 2012-09-12 | 2015-05-05 | Asm Ip Holdings B.V. | Process gas management for an inductively-coupled plasma deposition reactor |
US9324811B2 (en) | 2012-09-26 | 2016-04-26 | Asm Ip Holding B.V. | Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same |
US10714315B2 (en) | 2012-10-12 | 2020-07-14 | Asm Ip Holdings B.V. | Semiconductor reaction chamber showerhead |
US9640416B2 (en) | 2012-12-26 | 2017-05-02 | Asm Ip Holding B.V. | Single-and dual-chamber module-attachable wafer-handling chamber |
US8894870B2 (en) | 2013-02-01 | 2014-11-25 | Asm Ip Holding B.V. | Multi-step method and apparatus for etching compounds containing a metal |
US9589770B2 (en) | 2013-03-08 | 2017-03-07 | Asm Ip Holding B.V. | Method and systems for in-situ formation of intermediate reactive species |
US9484191B2 (en) | 2013-03-08 | 2016-11-01 | Asm Ip Holding B.V. | Pulsed remote plasma method and system |
US8993054B2 (en) | 2013-07-12 | 2015-03-31 | Asm Ip Holding B.V. | Method and system to reduce outgassing in a reaction chamber |
US9018111B2 (en) | 2013-07-22 | 2015-04-28 | Asm Ip Holding B.V. | Semiconductor reaction chamber with plasma capabilities |
US9396934B2 (en) | 2013-08-14 | 2016-07-19 | Asm Ip Holding B.V. | Methods of forming films including germanium tin and structures and devices including the films |
US9793115B2 (en) | 2013-08-14 | 2017-10-17 | Asm Ip Holding B.V. | Structures and devices including germanium-tin films and methods of forming same |
US9240412B2 (en) | 2013-09-27 | 2016-01-19 | Asm Ip Holding B.V. | Semiconductor structure and device and methods of forming same using selective epitaxial process |
US9556516B2 (en) | 2013-10-09 | 2017-01-31 | ASM IP Holding B.V | Method for forming Ti-containing film by PEALD using TDMAT or TDEAT |
US9605343B2 (en) | 2013-11-13 | 2017-03-28 | Asm Ip Holding B.V. | Method for forming conformal carbon films, structures conformal carbon film, and system of forming same |
US10179947B2 (en) | 2013-11-26 | 2019-01-15 | Asm Ip Holding B.V. | Method for forming conformal nitrided, oxidized, or carbonized dielectric film by atomic layer deposition |
US10683571B2 (en) | 2014-02-25 | 2020-06-16 | Asm Ip Holding B.V. | Gas supply manifold and method of supplying gases to chamber using same |
US9447498B2 (en) | 2014-03-18 | 2016-09-20 | Asm Ip Holding B.V. | Method for performing uniform processing in gas system-sharing multiple reaction chambers |
US10167557B2 (en) | 2014-03-18 | 2019-01-01 | Asm Ip Holding B.V. | Gas distribution system, reactor including the system, and methods of using the same |
US11015245B2 (en) | 2014-03-19 | 2021-05-25 | Asm Ip Holding B.V. | Gas-phase reactor and system having exhaust plenum and components thereof |
US9404587B2 (en) | 2014-04-24 | 2016-08-02 | ASM IP Holding B.V | Lockout tagout for semiconductor vacuum valve |
US10858737B2 (en) | 2014-07-28 | 2020-12-08 | Asm Ip Holding B.V. | Showerhead assembly and components thereof |
US9543180B2 (en) | 2014-08-01 | 2017-01-10 | Asm Ip Holding B.V. | Apparatus and method for transporting wafers between wafer carrier and process tool under vacuum |
US9890456B2 (en) | 2014-08-21 | 2018-02-13 | Asm Ip Holding B.V. | Method and system for in situ formation of gas-phase compounds |
US9657845B2 (en) | 2014-10-07 | 2017-05-23 | Asm Ip Holding B.V. | Variable conductance gas distribution apparatus and method |
US10941490B2 (en) | 2014-10-07 | 2021-03-09 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
KR102300403B1 (ko) | 2014-11-19 | 2021-09-09 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 |
KR102263121B1 (ko) | 2014-12-22 | 2021-06-09 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자 및 그 제조 방법 |
US9478415B2 (en) | 2015-02-13 | 2016-10-25 | Asm Ip Holding B.V. | Method for forming film having low resistance and shallow junction depth |
CN105990448B (zh) * | 2015-02-16 | 2019-06-18 | 南京瀚宇彩欣科技有限责任公司 | 薄膜晶体管 |
US10529542B2 (en) | 2015-03-11 | 2020-01-07 | Asm Ip Holdings B.V. | Cross-flow reactor and method |
US10276355B2 (en) | 2015-03-12 | 2019-04-30 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
US10458018B2 (en) | 2015-06-26 | 2019-10-29 | Asm Ip Holding B.V. | Structures including metal carbide material, devices including the structures, and methods of forming same |
US10600673B2 (en) | 2015-07-07 | 2020-03-24 | Asm Ip Holding B.V. | Magnetic susceptor to baseplate seal |
US10043661B2 (en) | 2015-07-13 | 2018-08-07 | Asm Ip Holding B.V. | Method for protecting layer by forming hydrocarbon-based extremely thin film |
US9899291B2 (en) | 2015-07-13 | 2018-02-20 | Asm Ip Holding B.V. | Method for protecting layer by forming hydrocarbon-based extremely thin film |
US10083836B2 (en) | 2015-07-24 | 2018-09-25 | Asm Ip Holding B.V. | Formation of boron-doped titanium metal films with high work function |
US10087525B2 (en) | 2015-08-04 | 2018-10-02 | Asm Ip Holding B.V. | Variable gap hard stop design |
US9647114B2 (en) | 2015-08-14 | 2017-05-09 | Asm Ip Holding B.V. | Methods of forming highly p-type doped germanium tin films and structures and devices including the films |
US9711345B2 (en) | 2015-08-25 | 2017-07-18 | Asm Ip Holding B.V. | Method for forming aluminum nitride-based film by PEALD |
US9960072B2 (en) | 2015-09-29 | 2018-05-01 | Asm Ip Holding B.V. | Variable adjustment for precise matching of multiple chamber cavity housings |
US9909214B2 (en) | 2015-10-15 | 2018-03-06 | Asm Ip Holding B.V. | Method for depositing dielectric film in trenches by PEALD |
US10211308B2 (en) | 2015-10-21 | 2019-02-19 | Asm Ip Holding B.V. | NbMC layers |
US10322384B2 (en) | 2015-11-09 | 2019-06-18 | Asm Ip Holding B.V. | Counter flow mixer for process chamber |
US9455138B1 (en) | 2015-11-10 | 2016-09-27 | Asm Ip Holding B.V. | Method for forming dielectric film in trenches by PEALD using H-containing gas |
US9905420B2 (en) | 2015-12-01 | 2018-02-27 | Asm Ip Holding B.V. | Methods of forming silicon germanium tin films and structures and devices including the films |
US9607837B1 (en) | 2015-12-21 | 2017-03-28 | Asm Ip Holding B.V. | Method for forming silicon oxide cap layer for solid state diffusion process |
US9627221B1 (en) | 2015-12-28 | 2017-04-18 | Asm Ip Holding B.V. | Continuous process incorporating atomic layer etching |
US9735024B2 (en) | 2015-12-28 | 2017-08-15 | Asm Ip Holding B.V. | Method of atomic layer etching using functional group-containing fluorocarbon |
US11139308B2 (en) | 2015-12-29 | 2021-10-05 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
US10529554B2 (en) | 2016-02-19 | 2020-01-07 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
US10468251B2 (en) | 2016-02-19 | 2019-11-05 | Asm Ip Holding B.V. | Method for forming spacers using silicon nitride film for spacer-defined multiple patterning |
US9754779B1 (en) | 2016-02-19 | 2017-09-05 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
US10501866B2 (en) | 2016-03-09 | 2019-12-10 | Asm Ip Holding B.V. | Gas distribution apparatus for improved film uniformity in an epitaxial system |
US10343920B2 (en) | 2016-03-18 | 2019-07-09 | Asm Ip Holding B.V. | Aligned carbon nanotubes |
US9892913B2 (en) | 2016-03-24 | 2018-02-13 | Asm Ip Holding B.V. | Radial and thickness control via biased multi-port injection settings |
US10865475B2 (en) | 2016-04-21 | 2020-12-15 | Asm Ip Holding B.V. | Deposition of metal borides and silicides |
US10087522B2 (en) | 2016-04-21 | 2018-10-02 | Asm Ip Holding B.V. | Deposition of metal borides |
US10190213B2 (en) | 2016-04-21 | 2019-01-29 | Asm Ip Holding B.V. | Deposition of metal borides |
US10367080B2 (en) | 2016-05-02 | 2019-07-30 | Asm Ip Holding B.V. | Method of forming a germanium oxynitride film |
US10032628B2 (en) | 2016-05-02 | 2018-07-24 | Asm Ip Holding B.V. | Source/drain performance through conformal solid state doping |
KR102592471B1 (ko) | 2016-05-17 | 2023-10-20 | 에이에스엠 아이피 홀딩 비.브이. | 금속 배선 형성 방법 및 이를 이용한 반도체 장치의 제조 방법 |
US11453943B2 (en) | 2016-05-25 | 2022-09-27 | Asm Ip Holding B.V. | Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor |
US10388509B2 (en) | 2016-06-28 | 2019-08-20 | Asm Ip Holding B.V. | Formation of epitaxial layers via dislocation filtering |
US9859151B1 (en) | 2016-07-08 | 2018-01-02 | Asm Ip Holding B.V. | Selective film deposition method to form air gaps |
US10612137B2 (en) | 2016-07-08 | 2020-04-07 | Asm Ip Holdings B.V. | Organic reactants for atomic layer deposition |
US9793135B1 (en) | 2016-07-14 | 2017-10-17 | ASM IP Holding B.V | Method of cyclic dry etching using etchant film |
US10714385B2 (en) | 2016-07-19 | 2020-07-14 | Asm Ip Holding B.V. | Selective deposition of tungsten |
US10381226B2 (en) | 2016-07-27 | 2019-08-13 | Asm Ip Holding B.V. | Method of processing substrate |
KR102532607B1 (ko) | 2016-07-28 | 2023-05-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 가공 장치 및 그 동작 방법 |
US10177025B2 (en) | 2016-07-28 | 2019-01-08 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US9812320B1 (en) | 2016-07-28 | 2017-11-07 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
CN109496281B (zh) * | 2016-07-28 | 2021-08-10 | 夏普株式会社 | 具有触摸面板的显示装置 |
US9887082B1 (en) | 2016-07-28 | 2018-02-06 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US10395919B2 (en) | 2016-07-28 | 2019-08-27 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US10090316B2 (en) | 2016-09-01 | 2018-10-02 | Asm Ip Holding B.V. | 3D stacked multilayer semiconductor memory using doped select transistor channel |
US10410943B2 (en) | 2016-10-13 | 2019-09-10 | Asm Ip Holding B.V. | Method for passivating a surface of a semiconductor and related systems |
US10643826B2 (en) | 2016-10-26 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for thermally calibrating reaction chambers |
US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
US10643904B2 (en) | 2016-11-01 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for forming a semiconductor device and related semiconductor device structures |
US10229833B2 (en) | 2016-11-01 | 2019-03-12 | Asm Ip Holding B.V. | Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10435790B2 (en) | 2016-11-01 | 2019-10-08 | Asm Ip Holding B.V. | Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap |
US10714350B2 (en) | 2016-11-01 | 2020-07-14 | ASM IP Holdings, B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10134757B2 (en) | 2016-11-07 | 2018-11-20 | Asm Ip Holding B.V. | Method of processing a substrate and a device manufactured by using the method |
KR102546317B1 (ko) | 2016-11-15 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기체 공급 유닛 및 이를 포함하는 기판 처리 장치 |
US10340135B2 (en) | 2016-11-28 | 2019-07-02 | Asm Ip Holding B.V. | Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride |
KR20180068582A (ko) | 2016-12-14 | 2018-06-22 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
US9916980B1 (en) | 2016-12-15 | 2018-03-13 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
KR20180070971A (ko) | 2016-12-19 | 2018-06-27 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US10269558B2 (en) | 2016-12-22 | 2019-04-23 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US10867788B2 (en) | 2016-12-28 | 2020-12-15 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US11390950B2 (en) | 2017-01-10 | 2022-07-19 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
US10655221B2 (en) | 2017-02-09 | 2020-05-19 | Asm Ip Holding B.V. | Method for depositing oxide film by thermal ALD and PEALD |
US10468261B2 (en) | 2017-02-15 | 2019-11-05 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
US10283353B2 (en) | 2017-03-29 | 2019-05-07 | Asm Ip Holding B.V. | Method of reforming insulating film deposited on substrate with recess pattern |
US10529563B2 (en) | 2017-03-29 | 2020-01-07 | Asm Ip Holdings B.V. | Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures |
US10103040B1 (en) | 2017-03-31 | 2018-10-16 | Asm Ip Holding B.V. | Apparatus and method for manufacturing a semiconductor device |
USD830981S1 (en) | 2017-04-07 | 2018-10-16 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate processing apparatus |
KR102457289B1 (ko) | 2017-04-25 | 2022-10-21 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 및 반도체 장치의 제조 방법 |
US10446393B2 (en) | 2017-05-08 | 2019-10-15 | Asm Ip Holding B.V. | Methods for forming silicon-containing epitaxial layers and related semiconductor device structures |
US10770286B2 (en) | 2017-05-08 | 2020-09-08 | Asm Ip Holdings B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
US10892156B2 (en) | 2017-05-08 | 2021-01-12 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film on a substrate and related semiconductor device structures |
US10504742B2 (en) | 2017-05-31 | 2019-12-10 | Asm Ip Holding B.V. | Method of atomic layer etching using hydrogen plasma |
US10886123B2 (en) | 2017-06-02 | 2021-01-05 | Asm Ip Holding B.V. | Methods for forming low temperature semiconductor layers and related semiconductor device structures |
US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
US10685834B2 (en) | 2017-07-05 | 2020-06-16 | Asm Ip Holdings B.V. | Methods for forming a silicon germanium tin layer and related semiconductor device structures |
KR20190009245A (ko) | 2017-07-18 | 2019-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물 |
US11018002B2 (en) | 2017-07-19 | 2021-05-25 | Asm Ip Holding B.V. | Method for selectively depositing a Group IV semiconductor and related semiconductor device structures |
US11374112B2 (en) | 2017-07-19 | 2022-06-28 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US10541333B2 (en) | 2017-07-19 | 2020-01-21 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US10605530B2 (en) | 2017-07-26 | 2020-03-31 | Asm Ip Holding B.V. | Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace |
US10312055B2 (en) | 2017-07-26 | 2019-06-04 | Asm Ip Holding B.V. | Method of depositing film by PEALD using negative bias |
US10590535B2 (en) | 2017-07-26 | 2020-03-17 | Asm Ip Holdings B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
US10692741B2 (en) | 2017-08-08 | 2020-06-23 | Asm Ip Holdings B.V. | Radiation shield |
US10770336B2 (en) | 2017-08-08 | 2020-09-08 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
US10249524B2 (en) | 2017-08-09 | 2019-04-02 | Asm Ip Holding B.V. | Cassette holder assembly for a substrate cassette and holding member for use in such assembly |
US11139191B2 (en) | 2017-08-09 | 2021-10-05 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US10236177B1 (en) | 2017-08-22 | 2019-03-19 | ASM IP Holding B.V.. | Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures |
USD900036S1 (en) | 2017-08-24 | 2020-10-27 | Asm Ip Holding B.V. | Heater electrical connector and adapter |
US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
US11056344B2 (en) | 2017-08-30 | 2021-07-06 | Asm Ip Holding B.V. | Layer forming method |
US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
KR102491945B1 (ko) | 2017-08-30 | 2023-01-26 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US10607895B2 (en) | 2017-09-18 | 2020-03-31 | Asm Ip Holdings B.V. | Method for forming a semiconductor device structure comprising a gate fill metal |
KR102630301B1 (ko) | 2017-09-21 | 2024-01-29 | 에이에스엠 아이피 홀딩 비.브이. | 침투성 재료의 순차 침투 합성 방법 처리 및 이를 이용하여 형성된 구조물 및 장치 |
US10844484B2 (en) | 2017-09-22 | 2020-11-24 | Asm Ip Holding B.V. | Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US10658205B2 (en) | 2017-09-28 | 2020-05-19 | Asm Ip Holdings B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
US10403504B2 (en) | 2017-10-05 | 2019-09-03 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
US10319588B2 (en) | 2017-10-10 | 2019-06-11 | Asm Ip Holding B.V. | Method for depositing a metal chalcogenide on a substrate by cyclical deposition |
US10923344B2 (en) | 2017-10-30 | 2021-02-16 | Asm Ip Holding B.V. | Methods for forming a semiconductor structure and related semiconductor structures |
US10910262B2 (en) | 2017-11-16 | 2021-02-02 | Asm Ip Holding B.V. | Method of selectively depositing a capping layer structure on a semiconductor device structure |
KR102443047B1 (ko) | 2017-11-16 | 2022-09-14 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 방법 및 그에 의해 제조된 장치 |
US11022879B2 (en) | 2017-11-24 | 2021-06-01 | Asm Ip Holding B.V. | Method of forming an enhanced unexposed photoresist layer |
CN111316417B (zh) | 2017-11-27 | 2023-12-22 | 阿斯莫Ip控股公司 | 与批式炉偕同使用的用于储存晶圆匣的储存装置 |
JP7206265B2 (ja) | 2017-11-27 | 2023-01-17 | エーエスエム アイピー ホールディング ビー.ブイ. | クリーン・ミニエンバイロメントを備える装置 |
US10290508B1 (en) | 2017-12-05 | 2019-05-14 | Asm Ip Holding B.V. | Method for forming vertical spacers for spacer-defined patterning |
US10872771B2 (en) | 2018-01-16 | 2020-12-22 | Asm Ip Holding B. V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
TW202325889A (zh) | 2018-01-19 | 2023-07-01 | 荷蘭商Asm 智慧財產控股公司 | 沈積方法 |
CN111630203A (zh) | 2018-01-19 | 2020-09-04 | Asm Ip私人控股有限公司 | 通过等离子体辅助沉积来沉积间隙填充层的方法 |
USD903477S1 (en) | 2018-01-24 | 2020-12-01 | Asm Ip Holdings B.V. | Metal clamp |
US11018047B2 (en) | 2018-01-25 | 2021-05-25 | Asm Ip Holding B.V. | Hybrid lift pin |
USD880437S1 (en) | 2018-02-01 | 2020-04-07 | Asm Ip Holding B.V. | Gas supply plate for semiconductor manufacturing apparatus |
US10535516B2 (en) | 2018-02-01 | 2020-01-14 | Asm Ip Holdings B.V. | Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures |
US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
WO2019158960A1 (en) | 2018-02-14 | 2019-08-22 | Asm Ip Holding B.V. | A method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US10896820B2 (en) | 2018-02-14 | 2021-01-19 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US10731249B2 (en) | 2018-02-15 | 2020-08-04 | Asm Ip Holding B.V. | Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus |
US10658181B2 (en) | 2018-02-20 | 2020-05-19 | Asm Ip Holding B.V. | Method of spacer-defined direct patterning in semiconductor fabrication |
KR102636427B1 (ko) | 2018-02-20 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 장치 |
US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
US11629406B2 (en) | 2018-03-09 | 2023-04-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
US11114283B2 (en) | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
KR102646467B1 (ko) | 2018-03-27 | 2024-03-11 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조 |
US10510536B2 (en) | 2018-03-29 | 2019-12-17 | Asm Ip Holding B.V. | Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber |
US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11088002B2 (en) | 2018-03-29 | 2021-08-10 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
KR102501472B1 (ko) | 2018-03-30 | 2023-02-20 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 |
KR20190128558A (ko) | 2018-05-08 | 2019-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상에 산화물 막을 주기적 증착 공정에 의해 증착하기 위한 방법 및 관련 소자 구조 |
TW202349473A (zh) | 2018-05-11 | 2023-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 用於基板上形成摻雜金屬碳化物薄膜之方法及相關半導體元件結構 |
KR102596988B1 (ko) | 2018-05-28 | 2023-10-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 그에 의해 제조된 장치 |
US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
TW202013553A (zh) | 2018-06-04 | 2020-04-01 | 荷蘭商Asm 智慧財產控股公司 | 水氣降低的晶圓處置腔室 |
US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
KR102568797B1 (ko) | 2018-06-21 | 2023-08-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 시스템 |
US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
CN112292478A (zh) | 2018-06-27 | 2021-01-29 | Asm Ip私人控股有限公司 | 用于形成含金属的材料的循环沉积方法及包含含金属的材料的膜和结构 |
WO2020003000A1 (en) | 2018-06-27 | 2020-01-02 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
US10612136B2 (en) | 2018-06-29 | 2020-04-07 | ASM IP Holding, B.V. | Temperature-controlled flange and reactor system including same |
KR20200002519A (ko) | 2018-06-29 | 2020-01-08 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 및 반도체 장치의 제조 방법 |
US10755922B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10388513B1 (en) | 2018-07-03 | 2019-08-20 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
CN109103103B (zh) * | 2018-07-16 | 2021-04-23 | 惠科股份有限公司 | 薄膜晶体管及其制备方法 |
US10767789B2 (en) | 2018-07-16 | 2020-09-08 | Asm Ip Holding B.V. | Diaphragm valves, valve components, and methods for forming valve components |
CN109103105A (zh) * | 2018-07-26 | 2018-12-28 | 惠科股份有限公司 | 薄膜晶体管及其制备方法、显示装置 |
US10483099B1 (en) | 2018-07-26 | 2019-11-19 | Asm Ip Holding B.V. | Method for forming thermally stable organosilicon polymer film |
US11053591B2 (en) | 2018-08-06 | 2021-07-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
US10883175B2 (en) | 2018-08-09 | 2021-01-05 | Asm Ip Holding B.V. | Vertical furnace for processing substrates and a liner for use therein |
US10829852B2 (en) | 2018-08-16 | 2020-11-10 | Asm Ip Holding B.V. | Gas distribution device for a wafer processing apparatus |
US20200058497A1 (en) * | 2018-08-20 | 2020-02-20 | Applied Materials, Inc | Silicon nitride forming precursor control |
US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR20200030162A (ko) | 2018-09-11 | 2020-03-20 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 |
US11049751B2 (en) | 2018-09-14 | 2021-06-29 | Asm Ip Holding B.V. | Cassette supply system to store and handle cassettes and processing apparatus equipped therewith |
CN110970344A (zh) | 2018-10-01 | 2020-04-07 | Asm Ip控股有限公司 | 衬底保持设备、包含所述设备的系统及其使用方法 |
US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR102592699B1 (ko) | 2018-10-08 | 2023-10-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치 |
US10847365B2 (en) | 2018-10-11 | 2020-11-24 | Asm Ip Holding B.V. | Method of forming conformal silicon carbide film by cyclic CVD |
US10811256B2 (en) | 2018-10-16 | 2020-10-20 | Asm Ip Holding B.V. | Method for etching a carbon-containing feature |
KR102546322B1 (ko) | 2018-10-19 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
KR102605121B1 (ko) | 2018-10-19 | 2023-11-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
USD948463S1 (en) | 2018-10-24 | 2022-04-12 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate supporting apparatus |
US10381219B1 (en) | 2018-10-25 | 2019-08-13 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film |
US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
KR20200051105A (ko) | 2018-11-02 | 2020-05-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 기판 처리 장치 |
US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
US11031242B2 (en) | 2018-11-07 | 2021-06-08 | Asm Ip Holding B.V. | Methods for depositing a boron doped silicon germanium film |
US10847366B2 (en) | 2018-11-16 | 2020-11-24 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US10559458B1 (en) | 2018-11-26 | 2020-02-11 | Asm Ip Holding B.V. | Method of forming oxynitride film |
US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
KR102636428B1 (ko) | 2018-12-04 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치를 세정하는 방법 |
US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
TW202037745A (zh) | 2018-12-14 | 2020-10-16 | 荷蘭商Asm Ip私人控股有限公司 | 形成裝置結構之方法、其所形成之結構及施行其之系統 |
CN109817575A (zh) * | 2018-12-24 | 2019-05-28 | 惠科股份有限公司 | 阵列基板的制备方法、装置及阵列基板 |
CN109742150A (zh) * | 2018-12-25 | 2019-05-10 | 惠科股份有限公司 | 一种阵列基板及其制造方法和显示面板 |
TWI819180B (zh) | 2019-01-17 | 2023-10-21 | 荷蘭商Asm 智慧財產控股公司 | 藉由循環沈積製程於基板上形成含過渡金屬膜之方法 |
KR20200091543A (ko) | 2019-01-22 | 2020-07-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
CN111524788B (zh) | 2019-02-01 | 2023-11-24 | Asm Ip私人控股有限公司 | 氧化硅的拓扑选择性膜形成的方法 |
US11482533B2 (en) | 2019-02-20 | 2022-10-25 | Asm Ip Holding B.V. | Apparatus and methods for plug fill deposition in 3-D NAND applications |
KR102626263B1 (ko) | 2019-02-20 | 2024-01-16 | 에이에스엠 아이피 홀딩 비.브이. | 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치 |
JP2020136678A (ja) | 2019-02-20 | 2020-08-31 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基材表面内に形成された凹部を充填するための方法および装置 |
TW202104632A (zh) | 2019-02-20 | 2021-02-01 | 荷蘭商Asm Ip私人控股有限公司 | 用來填充形成於基材表面內之凹部的循環沉積方法及設備 |
TW202100794A (zh) | 2019-02-22 | 2021-01-01 | 荷蘭商Asm Ip私人控股有限公司 | 基材處理設備及處理基材之方法 |
KR20200108242A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체 |
KR20200108243A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | SiOC 층을 포함한 구조체 및 이의 형성 방법 |
US11742198B2 (en) | 2019-03-08 | 2023-08-29 | Asm Ip Holding B.V. | Structure including SiOCN layer and method of forming same |
JP2020167398A (ja) | 2019-03-28 | 2020-10-08 | エーエスエム・アイピー・ホールディング・ベー・フェー | ドアオープナーおよびドアオープナーが提供される基材処理装置 |
KR20200116855A (ko) | 2019-04-01 | 2020-10-13 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자를 제조하는 방법 |
KR20200123380A (ko) | 2019-04-19 | 2020-10-29 | 에이에스엠 아이피 홀딩 비.브이. | 층 형성 방법 및 장치 |
KR20200125453A (ko) | 2019-04-24 | 2020-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 기상 반응기 시스템 및 이를 사용하는 방법 |
KR20200130121A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 딥 튜브가 있는 화학물질 공급원 용기 |
KR20200130118A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 비정질 탄소 중합체 막을 개질하는 방법 |
KR20200130652A (ko) | 2019-05-10 | 2020-11-19 | 에이에스엠 아이피 홀딩 비.브이. | 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조 |
JP2020188255A (ja) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
USD935572S1 (en) | 2019-05-24 | 2021-11-09 | Asm Ip Holding B.V. | Gas channel plate |
USD922229S1 (en) | 2019-06-05 | 2021-06-15 | Asm Ip Holding B.V. | Device for controlling a temperature of a gas supply unit |
KR20200141002A (ko) | 2019-06-06 | 2020-12-17 | 에이에스엠 아이피 홀딩 비.브이. | 배기 가스 분석을 포함한 기상 반응기 시스템을 사용하는 방법 |
KR20200143254A (ko) | 2019-06-11 | 2020-12-23 | 에이에스엠 아이피 홀딩 비.브이. | 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조 |
USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
USD931978S1 (en) | 2019-06-27 | 2021-09-28 | Asm Ip Holding B.V. | Showerhead vacuum transport |
KR20210005515A (ko) | 2019-07-03 | 2021-01-14 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법 |
JP2021015791A (ja) | 2019-07-09 | 2021-02-12 | エーエスエム アイピー ホールディング ビー.ブイ. | 同軸導波管を用いたプラズマ装置、基板処理方法 |
CN112216646A (zh) | 2019-07-10 | 2021-01-12 | Asm Ip私人控股有限公司 | 基板支撑组件及包括其的基板处理装置 |
KR20210010307A (ko) | 2019-07-16 | 2021-01-27 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR20210010816A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 라디칼 보조 점화 플라즈마 시스템 및 방법 |
KR20210010820A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 게르마늄 구조를 형성하는 방법 |
US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
TW202121506A (zh) | 2019-07-19 | 2021-06-01 | 荷蘭商Asm Ip私人控股有限公司 | 形成形貌受控的非晶碳聚合物膜之方法 |
CN112309843A (zh) | 2019-07-29 | 2021-02-02 | Asm Ip私人控股有限公司 | 实现高掺杂剂掺入的选择性沉积方法 |
CN112309899A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112309900A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
CN112323048B (zh) | 2019-08-05 | 2024-02-09 | Asm Ip私人控股有限公司 | 用于化学源容器的液位传感器 |
USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
JP2021031769A (ja) | 2019-08-21 | 2021-03-01 | エーエスエム アイピー ホールディング ビー.ブイ. | 成膜原料混合ガス生成装置及び成膜装置 |
USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
USD930782S1 (en) | 2019-08-22 | 2021-09-14 | Asm Ip Holding B.V. | Gas distributor |
USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
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US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
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KR20210054983A (ko) | 2019-11-05 | 2021-05-14 | 에이에스엠 아이피 홀딩 비.브이. | 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템 |
US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
KR20210062561A (ko) | 2019-11-20 | 2021-05-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템 |
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KR20210065848A (ko) | 2019-11-26 | 2021-06-04 | 에이에스엠 아이피 홀딩 비.브이. | 제1 유전체 표면과 제2 금속성 표면을 포함한 기판 상에 타겟 막을 선택적으로 형성하기 위한 방법 |
CN112885692A (zh) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112885693A (zh) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | 基板处理设备 |
JP2021090042A (ja) | 2019-12-02 | 2021-06-10 | エーエスエム アイピー ホールディング ビー.ブイ. | 基板処理装置、基板処理方法 |
KR20210070898A (ko) | 2019-12-04 | 2021-06-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR20210078405A (ko) | 2019-12-17 | 2021-06-28 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐 나이트라이드 층을 형성하는 방법 및 바나듐 나이트라이드 층을 포함하는 구조 |
US11527403B2 (en) | 2019-12-19 | 2022-12-13 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
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TW202235675A (zh) | 2020-11-30 | 2022-09-16 | 荷蘭商Asm Ip私人控股有限公司 | 注入器、及基板處理設備 |
US11946137B2 (en) | 2020-12-16 | 2024-04-02 | Asm Ip Holding B.V. | Runout and wobble measurement fixtures |
TW202231903A (zh) | 2020-12-22 | 2022-08-16 | 荷蘭商Asm Ip私人控股有限公司 | 過渡金屬沉積方法、過渡金屬層、用於沉積過渡金屬於基板上的沉積總成 |
CN112909087A (zh) * | 2021-03-08 | 2021-06-04 | 滁州惠科光电科技有限公司 | 一种显示面板、薄膜晶体管及其制备方法 |
USD980814S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas distributor for substrate processing apparatus |
USD980813S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas flow control plate for substrate processing apparatus |
USD981973S1 (en) | 2021-05-11 | 2023-03-28 | Asm Ip Holding B.V. | Reactor wall for substrate processing apparatus |
USD990441S1 (en) | 2021-09-07 | 2023-06-27 | Asm Ip Holding B.V. | Gas flow control plate |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5273920A (en) * | 1992-09-02 | 1993-12-28 | General Electric Company | Method of fabricating a thin film transistor using hydrogen plasma treatment of the gate dielectric/semiconductor layer interface |
US5834345A (en) * | 1995-09-28 | 1998-11-10 | Nec Corporation | Method of fabricating field effect thin film transistor |
US6355943B1 (en) * | 1998-10-07 | 2002-03-12 | Lg. Philips Lcd Co., Ltd. | Thin film transistor, method of producing the same, liquid crystal display, and thin film forming apparatus |
CN1534361A (zh) * | 2003-03-31 | 2004-10-06 | ��������ʾ���Ƽ���˾ | 薄膜晶体管液晶显示装置的制造方法 |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5041888A (en) * | 1989-09-18 | 1991-08-20 | General Electric Company | Insulator structure for amorphous silicon thin-film transistors |
EP0608633B1 (en) * | 1993-01-28 | 1999-03-03 | Applied Materials, Inc. | Method for multilayer CVD processing in a single chamber |
JP3173926B2 (ja) | 1993-08-12 | 2001-06-04 | 株式会社半導体エネルギー研究所 | 薄膜状絶縁ゲイト型半導体装置の作製方法及びその半導体装置 |
US6331717B1 (en) | 1993-08-12 | 2001-12-18 | Semiconductor Energy Laboratory Co. Ltd. | Insulated gate semiconductor device and process for fabricating the same |
JPH0878719A (ja) | 1994-09-01 | 1996-03-22 | Nec Corp | 光電変換素子 |
GB9525784D0 (en) * | 1995-12-16 | 1996-02-14 | Philips Electronics Nv | Hot carrier transistors and their manufacture |
TW381187B (en) * | 1997-09-25 | 2000-02-01 | Toshiba Corp | Substrate with conductive films and manufacturing method thereof |
GB9726094D0 (en) | 1997-12-10 | 1998-02-11 | Philips Electronics Nv | Thin film transistors and electronic devices comprising such |
GB9726511D0 (en) * | 1997-12-13 | 1998-02-11 | Philips Electronics Nv | Thin film transistors and electronic devices comprising such |
US6380558B1 (en) * | 1998-12-29 | 2002-04-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating the same |
JP2001077366A (ja) * | 1999-08-20 | 2001-03-23 | Internatl Business Mach Corp <Ibm> | 薄膜トランジスタ、液晶表示装置、及び薄膜トランジスタの製造方法 |
KR100739366B1 (ko) | 1999-12-20 | 2007-07-16 | 엘지.필립스 엘시디 주식회사 | 박막 트랜지스터 및 그 제조방법 |
JP3637332B2 (ja) * | 2002-05-29 | 2005-04-13 | 株式会社東芝 | 半導体装置及びその製造方法 |
GB0229699D0 (en) * | 2002-12-19 | 2003-01-29 | Koninkl Philips Electronics Nv | Liquid crystal displays |
US6764883B1 (en) | 2003-01-07 | 2004-07-20 | International Business Machines Corp. | Amorphous and polycrystalline silicon nanolaminate |
US7042052B2 (en) | 2003-02-10 | 2006-05-09 | Micron Technology, Inc. | Transistor constructions and electronic devices |
JP2005045139A (ja) | 2003-07-25 | 2005-02-17 | Sony Corp | 薄膜トランジスタの製造方法、薄膜トランジスタ、および表示装置 |
ATE541065T1 (de) * | 2004-03-12 | 2012-01-15 | Univ Utrecht Holding Bv | Verfahren zur herstellung von dünnschichten und vorrichtungen |
US7125758B2 (en) * | 2004-04-20 | 2006-10-24 | Applied Materials, Inc. | Controlling the properties and uniformity of a silicon nitride film by controlling the film forming precursors |
US20060019502A1 (en) * | 2004-07-23 | 2006-01-26 | Park Beom S | Method of controlling the film properties of a CVD-deposited silicon nitride film |
KR101107682B1 (ko) | 2004-12-31 | 2012-01-25 | 엘지디스플레이 주식회사 | 표시 소자용 박막 트랜지스터 기판 및 그 제조 방법 |
US20080158635A1 (en) | 2005-02-23 | 2008-07-03 | Pixtronix, Inc. | Display apparatus and methods for manufacture thereof |
JP4805587B2 (ja) * | 2005-02-24 | 2011-11-02 | エーユー オプトロニクス コーポレイション | 液晶表示装置とその製造方法 |
US20080012065A1 (en) | 2006-07-11 | 2008-01-17 | Sandisk Corporation | Bandgap engineered charge storage layer for 3D TFT |
CN100576472C (zh) | 2006-12-12 | 2009-12-30 | 中芯国际集成电路制造(上海)有限公司 | 具有非晶硅monos存储单元结构的半导体器件及其制造方法 |
US20090090913A1 (en) | 2007-10-03 | 2009-04-09 | Walker Andrew J | Dual-gate memory device with channel crystallization for multiple levels per cell (mlc) |
WO2009129391A2 (en) * | 2008-04-17 | 2009-10-22 | Applied Materials, Inc. | Low temperature thin film transistor process, device property, and device stability improvement |
KR101627728B1 (ko) * | 2008-12-30 | 2016-06-08 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 그 제조 방법 |
-
2009
- 2009-04-16 WO PCT/US2009/040811 patent/WO2009129391A2/en active Application Filing
- 2009-04-16 CN CN200980113306.5A patent/CN102007597B/zh not_active Expired - Fee Related
- 2009-04-16 US US12/425,228 patent/US8110453B2/en not_active Expired - Fee Related
- 2009-04-17 TW TW098112847A patent/TWI393191B/zh not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5273920A (en) * | 1992-09-02 | 1993-12-28 | General Electric Company | Method of fabricating a thin film transistor using hydrogen plasma treatment of the gate dielectric/semiconductor layer interface |
US5834345A (en) * | 1995-09-28 | 1998-11-10 | Nec Corporation | Method of fabricating field effect thin film transistor |
US6355943B1 (en) * | 1998-10-07 | 2002-03-12 | Lg. Philips Lcd Co., Ltd. | Thin film transistor, method of producing the same, liquid crystal display, and thin film forming apparatus |
CN1534361A (zh) * | 2003-03-31 | 2004-10-06 | ��������ʾ���Ƽ���˾ | 薄膜晶体管液晶显示装置的制造方法 |
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US20090261331A1 (en) | 2009-10-22 |
WO2009129391A3 (en) | 2010-02-18 |
TW201001561A (en) | 2010-01-01 |
CN102007597A (zh) | 2011-04-06 |
WO2009129391A2 (en) | 2009-10-22 |
TWI393191B (zh) | 2013-04-11 |
US8110453B2 (en) | 2012-02-07 |
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