CN102051665A - Polishing solution for electrochemical mechanical polishing of hard disk NiP - Google Patents
Polishing solution for electrochemical mechanical polishing of hard disk NiP Download PDFInfo
- Publication number
- CN102051665A CN102051665A CN2011100001373A CN201110000137A CN102051665A CN 102051665 A CN102051665 A CN 102051665A CN 2011100001373 A CN2011100001373 A CN 2011100001373A CN 201110000137 A CN201110000137 A CN 201110000137A CN 102051665 A CN102051665 A CN 102051665A
- Authority
- CN
- China
- Prior art keywords
- polishing
- acid
- percent
- nip
- polishing solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
The invention discloses polishing solution for electrochemical mechanical polishing of hard disk NiP. The polishing solution comprises the following components in percentage by mass: 1 to 10 percent of acid, 0.5 to 1 percent of potassium salt, 0.1 to 2 percent of complexing agent, 0.01 to 0.1 percent of surfactant, 1 to 5 percent of pH regulator KOH and the balance of water. The acid is one of citric acid or lactic acid or a mixture of the citric acid and the lactic acid; the potassium salt is potassium chloride or potassium nitrate; the complexing agent is ethylenediamine or aqueous ammonia or ethylene diamine tetraacetic acid (EDTA); and the surfactant is one of ammonium lauryl sulfate, ammonium dodecyl benzene sulfonate, TX-10, NP-5 and NP-9. The pH value of the polishing solution is regulated to be 5.0 to 6.0 by using the pH regulator KOH. The polishing solution does not contain abrasive particles, and can be used for polishing under low pressure (0.3 to 0.5psi); a polished NiP substrate has a few surface defects; and the polishing solution may replace the current chemical mechanical polishing technology for polishing the NiP substrate.
Description
Technical field:
The present invention relates to a kind of electrochemical mechanical polishing liquid in the computer hard disc manufacturing, be specifically related to a kind of polishing fluid that is used for the electrochemical mechanical polishing of hard disk NiP.
Background technology:
The flying height of computer magnetic head is reduced to below the 10nm at present, and the trend of further reduction is arranged.The operation of magnetic head and hard disk so requires magnetic disk surface ultra-smooth (Subnano-class roughness) near (nano level gap), and microdefects such as no marking, pit.If the harddisk surface waviness is big or when having microprotrusion, nick hole, in the process that runs up, can damage the magneticmedium of magnetic head or magnetic disk surface or cause information to read failure.Therefore before the magneticmedium of disk forms, must polish, reduce the roughness of substrate, remove surface imperfection such as bigger waviness, microprotrusion or small pit magnetic disk substrate.(chemical mechanical polish, CMP) technology is at present almost unique can provide the leveling technology, also is one of requisite gordian technique in the hard disk manufacturing in chemically machinery polished.But chemically machinery polished need higher pressure (＞carry out under 1psi) and polishing fluid in generally contain polish abrasive, produce surface imperfection at surface of polished easily.Electrochemical mechanical polishing (ECMP) is electrochemical surface reaction and mechanical effect combination, can be under low pressure (＜1psi), in the polishing particle content electrolyte solution (polishing fluid) of low (even do not contain and polish particle), polish.
Utilize electrochemical mechanical polishing that stainless steel and mould are polished, domesticly seen bibliographical information, but the polishing fluid in the document all can not be used for the electrochemical mechanical polishing of hard disk manufacturing NiP, because the polishing to NiP has higher Flatness requirement, and the polishing mechanism difference, need different polishing fluids.Polishing fluid of the present invention can be used for the electrochemical mechanical polishing of hard disk substrate NiP.
Summary of the invention:
Technical problem to be solved by this invention provides a kind of electrochemical mechanical polishing liquid that is used for computer hard disc substrate NiP polishing.Purpose is to reduce the polish pressure of traditional chemical mechanical polishing, reduces surfaceness simultaneously or reduces surface imperfection.
The polishing fluid group and the mass percent thereof of a kind of electrochemical mechanical polishing that is used for hard disk NiP provided by the present invention are as follows:
Acid: 1-8%; Sylvite: 0.5-1%; Complexing agent: 0.1-2%, tensio-active agent: 0.01-0.1%; PH regulator agent KOH:1-5%; All the other are water.
Described acid is citric acid or lactic acid.
Described sylvite is Repone K or saltpetre.
Described complexing agent is quadrol or ammoniacal liquor or EDTA.
Described tensio-active agent is a kind of among ammonium lauryl sulfate, Witco 1298 Soft Acid ammonium, TX-10, NP-5, the NP-9.
With pH regulator agent KOH the pH value of polishing fluid is adjusted to 5.0-6.0.
The preparation process of this polishing fluid is simple, with above-mentioned each component proportionally mix, stir make various materials in water fully the dissolving, be adjusted to needed pH value with KOH then and get final product.
This polishing fluid can use traditional chemical-mechanical polishing mathing, only need add a conductive electrode below polishing pad, and the polishing pad fluting constantly with polishing fluid, makes to be full of polishing fluid in the groove during polishing.Polished NiP substrate links to each other with dc power anode, and the conductive electrode of polishing pad below links to each other with dc power cathode.This polishing fluid can polish being lower than under the 0.5psi pressure, has reduced polish pressure widely.
Embodiment:
Embodiment 1: the polishing fluid prescription is: lactic acid 3%wt, Repone K 0.5%wt, quadrol 1%wt, ammonium lauryl sulfate 0.1%wt, all the other are water, with KOH2.5%wt pH are transferred to 5.0.
The polishing voltage of supply is that 8V, polish pressure are that 0.3psi, polishing fluid flow are that 100ml/min, polishing block and clamper rotating speed are 40 rev/mins.
Polishing speed reaches 560nm/min, and surface roughness Ra reaches 0.5nm.
Embodiment 2: the polishing fluid prescription is: citric acid 6%wt, saltpetre 1%wt, ammonia 1%wt, ammonium lauryl sulfate 0.1%wt, all the other are water, with KOH5%wt pH are transferred to 6.0.
The polishing voltage of supply is that 8V, polish pressure are that 0.5pai, polishing fluid flow are that 100ml/min, polishing block and clamper rotating speed are 40 rev/mins.
Polishing speed reaches 520nm/min, and surface roughness Ra reaches 0.4nm.
Embodiment 3: the polishing fluid prescription is: lactic acid 4%wt, Repone K 1%wt, EDTA1%wt, ammonium lauryl sulfate 0.1%wt, all the other are water, with 2.5%wt KOH pH are transferred to 5.5.
The polishing voltage of supply is that 8V, polish pressure are that 0.3pai, polishing fluid flow are that 100ml/min, polishing block and clamper rotating speed are 40 rev/mins.
Polishing speed reaches 480nm/min, and surface roughness Ra reaches 0.7nm.
Embodiment 4: the polishing fluid prescription is: lactic acid 8%wt, saltpetre 0.5%wt, EDTA1%wt, ammonium lauryl sulfate 0.1%wt, all the other are water, with 6%wt KOH pH are transferred to 5.5.
The polishing voltage of supply is that 8V, polish pressure are that 0.5pai, polishing fluid flow are that 100ml/min, polishing block and clamper rotating speed are 40 rev/mins.
Polishing speed reaches 580nm/min, and surface roughness Ra reaches 0.8nm.
Claims (5)
1. polishing fluid that is used for the electrochemical mechanical polishing of hard disk NiP is characterized in that the composition of described polishing fluid and mass percent thereof are as follows:
Acid: 1-10%; Sylvite: 0.5-1%; Complexing agent: 0.1-2%, tensio-active agent: 0.01-0.1%; PH regulator agent KOH:1-5%; All the other are water.
2. polishing fluid according to claim 1 is characterized in that described acid is citric acid or lactic acid.
3. polishing fluid according to claim 1 is characterized in that described sylvite is Repone K or saltpetre.
4. polishing fluid according to claim 1 is characterized in that described complexing agent is quadrol or ammoniacal liquor or EDTA.
5. polishing fluid according to claim 1 is characterized in that described tensio-active agent is a kind of among ammonium lauryl sulfate, Witco 1298 Soft Acid ammonium, TX-10, NP-5, the NP-9.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110000137.3A CN102051665B (en) | 2011-01-04 | 2011-01-04 | Polishing solution for electrochemical mechanical polishing of hard disk NiP |
| TW100108887A TWI398204B (en) | 2011-01-04 | 2011-03-16 | Assembly jig for flexible printed circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110000137.3A CN102051665B (en) | 2011-01-04 | 2011-01-04 | Polishing solution for electrochemical mechanical polishing of hard disk NiP |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102051665A true CN102051665A (en) | 2011-05-11 |
| CN102051665B CN102051665B (en) | 2014-02-26 |
Family
ID=43956451
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110000137.3A Expired - Fee Related CN102051665B (en) | 2011-01-04 | 2011-01-04 | Polishing solution for electrochemical mechanical polishing of hard disk NiP |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN102051665B (en) |
| TW (1) | TWI398204B (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104479565A (en) * | 2014-10-22 | 2015-04-01 | 上海大学 | An abrasive-grain-free polishing solution composition containing a redox system for memory hard disk substrates and a preparing method thereof |
| CN104497888A (en) * | 2014-10-22 | 2015-04-08 | 上海大学 | Initiator-containing abrasive particle-free polishing solution composition for memory hard disk substrate and preparation method thereof |
| CN106637377A (en) * | 2016-12-19 | 2017-05-10 | 二重集团（德阳）重型装备股份有限公司 | Nickel-based alloy electrolytic polishing liquid and polishing method thereof |
| CN106926139A (en) * | 2017-03-23 | 2017-07-07 | 大连理工大学 | KDP crystal water dissolves micro/nano processing systems and processing method |
| CN109371455A (en) * | 2018-12-18 | 2019-02-22 | 深圳市鹏程翔实业有限公司 | A kind of Neutral Electrolysis go flash liquid, this go the technique and application method of flash liquid |
| CN115142113A (en) * | 2022-08-08 | 2022-10-04 | 哈尔滨工业大学 | Electrolytic polishing solution additive for nickel-based alloy, polishing solution and polishing method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002064314A1 (en) * | 2001-02-12 | 2002-08-22 | Speedfam-Ipec Corporation | Method and apparatus for electrochemical planarization of a workpiece |
| US6464855B1 (en) * | 2000-10-04 | 2002-10-15 | Speedfam-Ipec Corporation | Method and apparatus for electrochemical planarization of a workpiece |
| WO2008058200A2 (en) * | 2006-11-08 | 2008-05-15 | St. Lawrence Nanotechnology, Inc. | Method and apparatus for electrochemical mechanical polishing nip substrates |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI303955B (en) * | 2005-12-28 | 2008-12-01 | High Tech Comp Corp | Dual-axis circuit board |
| TWI325750B (en) * | 2007-08-22 | 2010-06-01 | Inventec Corp | Retention device |
-
2011
- 2011-01-04 CN CN201110000137.3A patent/CN102051665B/en not_active Expired - Fee Related
- 2011-03-16 TW TW100108887A patent/TWI398204B/en not_active IP Right Cessation
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6464855B1 (en) * | 2000-10-04 | 2002-10-15 | Speedfam-Ipec Corporation | Method and apparatus for electrochemical planarization of a workpiece |
| WO2002064314A1 (en) * | 2001-02-12 | 2002-08-22 | Speedfam-Ipec Corporation | Method and apparatus for electrochemical planarization of a workpiece |
| WO2008058200A2 (en) * | 2006-11-08 | 2008-05-15 | St. Lawrence Nanotechnology, Inc. | Method and apparatus for electrochemical mechanical polishing nip substrates |
Non-Patent Citations (1)
| Title |
|---|
| 田军等: "计算机硬盘NiP基板CMP记录及技术研究", 《微细加工技术》 * |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104479565A (en) * | 2014-10-22 | 2015-04-01 | 上海大学 | An abrasive-grain-free polishing solution composition containing a redox system for memory hard disk substrates and a preparing method thereof |
| CN104497888A (en) * | 2014-10-22 | 2015-04-08 | 上海大学 | Initiator-containing abrasive particle-free polishing solution composition for memory hard disk substrate and preparation method thereof |
| CN106637377A (en) * | 2016-12-19 | 2017-05-10 | 二重集团（德阳）重型装备股份有限公司 | Nickel-based alloy electrolytic polishing liquid and polishing method thereof |
| CN106637377B (en) * | 2016-12-19 | 2019-03-19 | 二重（德阳）重型装备有限公司 | Nickel-base alloy electrolytic polishing liquid and its polishing method |
| CN106926139A (en) * | 2017-03-23 | 2017-07-07 | 大连理工大学 | KDP crystal water dissolves micro/nano processing systems and processing method |
| CN109371455A (en) * | 2018-12-18 | 2019-02-22 | 深圳市鹏程翔实业有限公司 | A kind of Neutral Electrolysis go flash liquid, this go the technique and application method of flash liquid |
| CN115142113A (en) * | 2022-08-08 | 2022-10-04 | 哈尔滨工业大学 | Electrolytic polishing solution additive for nickel-based alloy, polishing solution and polishing method |
| CN115142113B (en) * | 2022-08-08 | 2023-10-13 | 哈尔滨工业大学 | Electrolytic polishing solution additive for nickel-based alloy, polishing solution and polishing method |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI398204B (en) | 2013-06-01 |
| CN102051665B (en) | 2014-02-26 |
| TW201230911A (en) | 2012-07-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102051665B (en) | Polishing solution for electrochemical mechanical polishing of hard disk NiP | |
| CN106811751B (en) | A kind of chemically mechanical polishing of 304 stainless steels polishing agent and polishing fluid and preparation method thereof | |
| CN109554119B (en) | Silicon carbide chemical mechanical polishing solution with improved pH stability and application thereof | |
| CN101372606B (en) | Method for polishing sulfur compound phase-change material by cerium oxide chemico-mechanical polishing solution | |
| CN102372273B (en) | Silica sol with double grain diameters and preparation method thereof | |
| CN104830234A (en) | A-directional sapphire mobile phone cover plate polishing solution and preparation method thereof | |
| CN104835731A (en) | Quick polishing method for large-dimension 4H,6H-SiC wafer | |
| CN104342704A (en) | Oxidizing agent-free alkaline aluminum alloy polishing liquid and preparation method thereof | |
| CN109929460A (en) | A kind of glass polishing water base cerium oxide polishing slurry and preparation method thereof | |
| KR20130114635A (en) | Polishing agent and polishing method | |
| CN1923943B (en) | Polishing composition | |
| CN102775916A (en) | Polishing composition for improving surface quality of sapphire | |
| KR20140091571A (en) | Polishing composition | |
| CN102516878A (en) | Polishing solution capable of improving surface quality of polished phase transition material | |
| SG189534A1 (en) | Composition for polishing and method of polishing semiconductor substrate using same | |
| CN102031064A (en) | Silicon wafer chemical machinery polishing solution with special buffer system | |
| CN107164764A (en) | A kind of environment protection chemical mechanical polishing method of copper | |
| CN103247304A (en) | Manufacturing method of substrate, manufacturing method of glass substrate for disk, and manufacutring method of disk | |
| CN102399494A (en) | Chemical mechanical polishing solution | |
| CN102391787A (en) | Polishing solution used for polishing silicon single crystal sheet as well as preparation and application thereof | |
| JP2006205265A (en) | Polishing method and polishing composition | |
| CN110055538B (en) | Alumina slurry and preparation method thereof | |
| CN101457122A (en) | Chemico-mechanical polishing liquid for copper process | |
| CN101955732B (en) | A kind of chemical mechanical polishing liquid | |
| JP2014216369A (en) | Abrasive and polishing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140226 Termination date: 20150104 |
|
| EXPY | Termination of patent right or utility model |