CN102171805B - 用于集成电路的凸块应力减轻层 - Google Patents

用于集成电路的凸块应力减轻层 Download PDF

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CN102171805B
CN102171805B CN200980139245XA CN200980139245A CN102171805B CN 102171805 B CN102171805 B CN 102171805B CN 200980139245X A CN200980139245X A CN 200980139245XA CN 200980139245 A CN200980139245 A CN 200980139245A CN 102171805 B CN102171805 B CN 102171805B
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layer
scolder
metal coupling
limit
metal
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CN102171805A (zh
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K·J·李
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Intel Corp
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Intel Corp
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Abstract

一种装置，包括：具有器件层的半导体基板、多个金属化层、钝化层以及形成在钝化层上并电耦合到至少一个钝化层的金属凸块。所述装置进一步包括形成在钝化层上的焊料限定层，所述焊料限定层遮蔽金属凸块的上表面的外边缘，因此使得上表面的外边缘不能被焊接材料润湿。

Description

用于集成电路的凸块应力减轻层
背景技术
在集成电路的制造中，通常使用倒装片连接来将集成电路管芯(IC管芯)附接到承载基板，例如集成电路封装(IC封装)或母板上。倒装片结构采用布置在IC管芯的表面上的金属凸块阵列。金属凸块与IC封装上的对应的焊球对准。一旦对准，在焊料的熔点以上的温度执行一退火工艺，以使焊球回流并且润湿金属凸块的表面。然后快速冷却焊球和金属凸块，以最小化金属的混合。使用例如环氧树脂等底填材料来填充金属凸块/焊球连接之间和周围的空隙。
整个微电子工业所面对的主要问题是在倒装片封装工艺期间在IC管芯内发生的较软的(weak)低k层间介电(ILD)层的破裂和剥离。采用当前设计，由于热膨胀失配所产生的剪应力以及管芯和封装的翘曲行为所导致的法向应力，使得IC管芯内的ILD层上的负荷高。在过去，由于通常将二氧化硅这一较硬的介电材料用于ILD层，ILD破裂和剥离还不是业界的问题。但是因为使用较软的低k介电材料正变成业界标准，所以需要改进的设计以减少含有这些低k材料的ILD层的破裂和剥离。此外，因为集成电路管芯和封装的尺寸继续缩小，因而由于减小凸块间距和减小凸块直径的趋势，这些问题预期会变得更棘手。
附图说明
图1A示出传统的金属凸块/焊球连接。
图1B和1C示出IC管芯和IC封装之间的CTE失配如何将压应力和拉应力施加到IC管芯中。
图1D示出与使用较宽金属凸块相关联的问题。
图2A和2B示出根据本发明的实施方式的焊料限定层。
图2C示出采用本发明的焊料限定层形成的倒装片连接。
图2D和2E示出采用本发明的焊料限定层形成的倒装片连接如何能减轻IC管芯内的应力。
图2F示出其中采用较宽金属凸块以及本发明的焊料限定层的实施方式。
图3是根据本发明的实施方式的焊料限定层的形成方法。
图4是根据本发明的另一实施方式的焊料限定层的形成方法。
图5A至5C示出本发明的焊料限定层的替代实施方式。
图6A至6D示出包含预附接焊球的本发明的又一实施方式。
图7A至7B示出包含额外的金属凸块的本发明的又一实施方式。
具体实施方式
在此所描述的是减小集成电路封装的金属凸块层的机械应力的系统和方法。在下面的描述中，将采用本领域技术人员所公用的术语来描述说明性的实施方式的各个方面，以使本领域的其他技术人员了解他们的工作的主旨。然而，显然对本领域的技术人员来说可以仅仅以所描述的某些方面来实施本发明。为了解释的目的，阐释了具体符号、材料和构造，以便提供对说明性的实施方式的详尽的理解。然而，显然对本领域的技术人员来说可以在不详尽描述的情况下实施本发明。在其它实例中，为了不使说明性的实施方式难于理解而省略和简化了公知的特征。
以最有助于理解本发明的方式依次描述作为多个分立的操作的各种操作，然而，所描述的顺序不能解释为暗示这些操作是必需依赖于顺序的。特别地，不需要以所描述的顺序执行这些操作。
图1A示出耦合之前的传统IC管芯100和IC封装150。所示出的IC管芯100具有基板102、器件层104、金属化层106、多个钝化层108、最终的厚金属化层110和多个金属凸块112。凸块112可以采用包含但不限于铜、镍、钯、金和其他金属或合金的金属来形成，合金如为铅和锡的合金。该结构也可以包括位于金属凸块112和最终钝化层108之间的阻挡和晶种层114，阻挡和晶种层114也可以称为凸块限定金属(BLM)层114。提供图1A的IC管芯100作为IC管芯的典型实例并且许多其它变形是本领域公知的。在此所提供的本发明的实施方式并不意为并且不应限定为图1A中所描述的具体IC管芯结构。
如本领域所公知的，基板102可以采用例如体硅、绝缘体上硅材料、含锗材料和其它适于用作半导体基板的材料来形成。器件层104是基板102的上表面并且含有各种电子器件，包括但不限于晶体管、电容器、互连和浅沟槽隔离结构(这些均未示出)。
金属化层106用于对半导体基板102上的各种器件进行互连。金属化层106可以包括金属互连、用于隔离并绝缘金属互连的层间介电(ILD)层和穿透ILD层以将金属互连耦合在一起的通孔。ILD层可以由例如掺碳的氧化物和二氧化硅等形成。正是这些ILD层通常由于倒装片封装工艺所产生的应力而变得破裂或剥离。金属互连和通孔通常由含有铜或钨的金属或合金形成。
一个或更多钝化层108通常形成在金属化层106上。钝化层108密封并保护IC管芯使免于损害和污染。钝化层108可以由许多不同的材料形成，包括但不限于ILD、氮化物、二氧化硅、聚苯并恶唑、环氧树脂、硅树脂、双苯并环丁烯、酚醛树脂和聚酰亚胺。最终的厚金属化层110可以用来提供金属化层106和形成在钝化层108上的多个金属凸块112之间的鲁棒连接。
金属凸块112通过穿过钝化层108形成的金属通孔来维持至集成电路管芯的金属化层的电连接。BLM层114通常是用于金属凸块112的阻挡层和晶种层。如上所述，在替代实施方式中金属凸块112通常采用铜、镍、钯、金、或铅和锡的合金来形成。金属凸块112可以采用本领域公知的工艺来形成，所述公知的工艺包括但不限于CVD、PVD、ALD、PECVD、电镀和无电镀。
图1A进一步示出包括基板152的IC封装150，其中多个焊球154安装在基板152的一侧上。焊球154可以由任何传统焊接材料形成，例如可以使用锡、银和铜的合金。基板152起小型印刷电路板的作用，该印刷电路板将焊球154布线连接到安装在基板152另一侧上的多个电连接。这些电连接被设置成栅格阵列156的形式，例如针栅阵列(PGA)、球栅阵列(BGA)或平面栅格阵列(LGA)。
图1B和1C示出倒装片连接如何能够减小IC管芯100内的应力。首先，如图所示IC管芯100耦合到IC封装150。用于物理连接管芯和封装的方法是本领域所公知的。如图所示，每个焊球154沿界面160电连接并物理连接到金属凸块112。在进行回流处理以物理接合焊球154和金属凸块112期间，焊球154润湿金属凸块112直至金属凸块112的边缘。因而焊球154趋向于直径比金属凸块112的直径大。
如上所述，所产生的应力的原因是IC管芯100的热膨胀系数(CTE)远小于IC封装150的热膨胀系数(CTE)。由于IC管芯100和IC封装150经常经受大范围温度改变，例如在制造期间以及在产品的实际使用期间，CTE差异导致IC封装150的膨胀和缩小比率比IC管芯100大。这将大应力施加到焊球/金属凸块连接上，从而将压缩和拉伸应力传播至IC管芯100的金属化层106内的ILD层并且导致破裂和/或剥离问题。
例如，图1B示出在相对高温下发生的情形。在此情形中，IC封装150的膨胀比率比IC管芯100大，从而拉动焊球154远离IC封装150的中心并且因而也拉动金属凸块112远离。箭头162一般地描述直接传播到IC管芯100中的压缩和拉伸应力。类似地，图1C示出在相对低温下发生的情形。在此情形中，IC封装150的缩小比率比IC管芯100大，推动焊球154进入IC封装150的中心并且因而也推动金属凸块112。再次，箭头162一般地描述在此情况下直接传播进IC管芯100的压缩和拉伸应力。
一种用于减小破裂和剥离的方法是使用较宽的金属凸块112，其中较宽的金属凸块112能够在较大范围上分散应力。不幸地，因为IC管芯100倾向于小型化并且提升性能，所以所需要的输入/输出端子的数量增加，这导致了减小的间距和相邻金属凸块112之间的间隔减小。并且如图1D所示，因为金属凸块112之间的间隔减小，相关的焊球154趋向于彼此接触并且短路。这样，必须使用窄金属凸块112，这限制了它们释放由IC封装150所产生的应力的能力。
为了克服现有技术的不足，图2A示出根据本发明的一个实施方式的焊料限定层200。焊料限定层200形成在钝化层108上和金属凸块112的部分上。焊料限定层200遮蔽金属凸块112的上表面的一部分，因而限制可利用到焊球154的表面面积的量。更具体地说，焊料限定层200遮蔽了每个金属凸块112的上表面的外边缘202，因而使得这些上表面外边缘202不能被焊料润湿。这防止了焊料球154一直润湿到金属凸块112的外边缘。图2B示出遮蔽金属凸块112的上表面外边缘202的焊料限定层200的顶视图，因而允许仅暴露上表面的中心部分。在不同的实施方式中，焊料限定层200可以遮蔽金属凸块112的上表面的15％至95％的任何区域。在一些实施方式中，焊料限定层200可以遮蔽金属凸块112的上表面的35％至50％的任何区域。
如图2C所示，当具有焊料限定层200的IC管芯100耦合到IC封装150时，焊球154被限定到金属凸块112的上表面的中间部分。焊球154不能润湿金属凸块112的外边缘并且因而不能延伸超过金属凸块112的外边缘。
焊料限定层200可以采用适于半导体制造工艺的并且不能被焊接材料润湿的多种绝缘材料形成。可以用于焊料限定层200的一些材料实例包括但不限于光可限定聚合介电材料、传统介电材料、环氧类材料、硅树脂、聚酰亚胺、例如铝和钨的不可润湿金属、以及氮化物。光可限定聚合介电材料的一些具体例子包括但不限于来自Rohm和Haas的InterViaTM 8000-系列光可限定聚合介电材料、来自Dow Chemical的CycloteneTM 4000-系列光可限定聚合介电材料、来自Microchem的SU-8光可限定环氧树脂材料、来自Dow Corning的WL-5000系列光可限定硅树脂介电材料、来自Promerus的Avatrel光可限定介电材料、来自ShinEtsuMicroSi的SINR-系列光可限定介电材料、来自Sumitomo Bakelite Co.，Ltd.的SUMIRESINEXCELCRC-8600系列光可限定介电材料、来自FujiFilm的AP2210、AN-3310、和Durimide7000-系列光可限定聚酰亚胺材料、来自Toray的PhotoneeceTM光可限定聚酰亚胺材料、来自Asahi Kasei EMD的PimelTM光可限定聚酰亚胺材料、来自HD Microsystems的光可限定聚酰亚胺材料、来自Tokyo Ohka Kogyo Co.Ltd.，的TMMR S2000光可限定介电材料、和来自JSR Micro，Inc的WPR-系列光可限定介电材料。
图2D和2E示出使用本发明的焊料限定层的一个实施方式形成的倒装片连接如何能够减轻IC管芯100内的应力。图2D示出当在相对高的温度下IC封装150膨胀比率大于IC管芯100时所发生的情形。图2E示出当在相对低的温度下IC封装150收缩比率大于IC管芯100时所发生的情形。箭头162一般地描述所产生的压缩和膨胀应力。
与图1B和1C所示的应力不同，根据本发明的实施方式，由于它们在平行于IC管芯100的上表面的方向上的初始传播，在此部分减轻了应力。在传播到IC管芯100中之前，应力横过金属凸块112上表面的一部分传播到焊料限定层200中。这减小了传输到管芯100中的压缩和拉伸应力并且至少部分地减轻了例如介电层的破裂和/或剥离等问题。在一些情况下，破裂和/或剥离可以完全消除。
图2F示出本发明的其中较宽的金属凸块112结合焊料限定层200使用的另一实施方式。同样，较宽的金属凸块112能将应力扩展到较大面积上。在此，当金属凸块112之间的间隔减小时，焊料限定层200防止焊球154彼此接触，因而防止了如图1D所示的现有技术中可能产生的短路。
图3是根据本发明的实施方式的形成焊料限定层200的方法300。假设IC管芯100包括多个金属凸块112，方法300以在IC管芯100和金属凸块112上沉积焊料限定材料的均厚层开始(图3的步骤302)。焊料限定材料可以覆盖金属凸块112的全部。在此实施方式中，焊料限定材料可以是上述的任意光可限定聚合介电材料。可以采用传统的沉积方法来沉积光可限定聚合介电材料，包括但不限于物理气相沉积、溅射、旋涂沉积、原子层沉积或化学气相沉积。也可以采用适于使用光可限定聚合介电材料的替代沉积工艺。
然后，图案化焊料限定材料以形成暴露每个金属凸块112的上表面的一部分的开口(步骤304)。采用适于光可限定聚合介电材料的公知的光刻工艺来图案化焊料限定材料。根据本发明的实施方式，在基本上不暴露金属凸块112的外边缘的情况下，图案化工艺从每个金属凸块112的上表面的一部分移除焊料限定材料。
图案化工艺，也就是光刻工艺是本领域公知的。光刻工艺一般包括一个曝光步骤以在金属凸块112上在焊料限定材料中限定开口(步骤304a)。注意只是在此步骤中限定开口；开口还未形成。根据本发明，所限定的开口并不延伸到金属凸块112的边缘。相反，他们基本上覆盖每个金属凸块112的上表面的中心部分。曝光步骤使用光掩膜以及一些形式的辐射，例如紫外线辐射或远紫外辐射。
然后，在显影步骤中，使用显影剂溶液移除在金属凸块112上限定开口的光可限定介电材料的那些部分(步骤304b)。取决于光可限定聚合介电材料是正性的还是负性的，那些被移除的部分将是暴露区域或是非暴露区域。当那些部分被移除后，最终结果是焊料限定层遮蔽金属凸块112的边缘，但暴露出金属凸块112的上表面的一部分。在一些实施方式中，可以烘烤或固化最终的焊料限定层200以硬化该层(步骤304c)。
在本发明的另一实施方式中，光可限定聚合介电材料之外的材料可被用于焊料限定材料。例如，可以使用某些其他介电材料、环氧树脂、硅树脂、聚酰亚胺以及氮化物，只要它们不能被焊料润湿并具有合适的兼容性和绝缘特性。图4示出这种替代方法400。
图4是使用光致抗蚀剂以图案化焊料限定材料中的开口的方法400。当焊料限定材料不是光可限定的时，可以使用传统的图案化工艺在金属凸块112上形成开口。例如，假如IC管芯100包括多个金属凸块112，方法400以在IC管芯100和金属凸块112上沉积焊料限定材料的均厚层作为开始(图4的步骤402)。焊料限定材料可以覆盖整个金属凸块112。
然后，在焊料限定材料上沉积一层光致抗蚀剂材料(步骤404)。采用公知的光刻工艺图案化光致抗蚀剂材料，以在光致抗蚀剂中形成对准每个金属凸块112但是基本上不延伸到每个金属凸块112的边缘的开口(步骤406)。用于光致抗蚀剂的图案化工艺包括公知的曝光、烘焙和显影步骤。
光致抗蚀剂中的这些开口随后用作掩膜以蚀刻下方的焊料限定材料并且将开口从光刻层转移到焊料限定材料中(步骤408)。焊料限定材料中的开口暴露每个金属凸块112的上表面的一部分，并基本上不暴露金属凸块112的边缘。采用适于所选的焊料限定材料的蚀刻剂执行蚀刻工艺。
最后，移除光刻剂材料(步骤410)且最终结果是焊料限定层200遮蔽金属凸块112的外边缘，但是暴露出金属凸块112的上表面的一部分。在一些实施方式中，可以烘焙所形成的最终焊料限定层200，以进一步硬化该层。
图5A示出根据本发明的另一实施方式的焊料限定层。在此，焊料限定层200为相对薄的共形层。可以使用本领域公知的用于沉积共形层的工艺，例如CVD和ALD。可以采用与焊料限定层200不同的底填材料(例如环氧树脂)来填充金属凸块112之间的间隔。图5B和5C示出共形焊料限定层200的其他变形。在此，移除金属凸块112之间的区域上的层200的一部分。在图5A中，焊料限定层200的边缘部分202保持在每个金属凸块112的底部。在图5B中，甚至该边缘部分也被移除。因而在图5B和5C的实施方式中焊料限定层200是不连续层。
图6A至6D示出焊料限定层200的进一步的替代实施方式。在这些实施方式中，焊球154预附接到IC管芯100上而不是作为IC封装150的一部分。图6A示出与本发明的焊料限定层200一起使用的预附接焊球154。图6B示出与本发明的共形焊料限定层200一起使用的预附接焊球154。图6C示出与本发明的不连续共形焊料限定层200一起使用的预附接焊球154，其中焊料限定层包括边缘部分202。且图6D示出与本发明的不具有边缘部分的不连续共形焊料限定层200一起使用的预附接焊球154。
图7A和7B示出其中额外的金属凸块700用于将应力从IC管芯100进一步移除的进一步的实施方式。在图7A中，额外的金属凸块700形成在焊料限定层200中的开口中。且在图7B中，额外的金属凸块700形成在焊料限定层200顶上。在此实施方式中焊料限定层200中的开口由将金属凸块112耦合到额外的金属凸块700的通孔702替代。
因而，已经描述了焊料限定层，其限定金属凸块112的表面的多大部分可被焊球154润湿。根据本发明的实施方式，焊料限定层防止金属凸块的边缘被焊球润湿，因而将焊球限制在金属凸块的上表面的一部分上。当IC封装附接到IC管芯时焊料限定层也帮助分散应力。在此所公开的本发明的实施方式提供了额外的低kILD保护，使得能够减小凸块间距并且允许使用相对较软的低kILD材料和较软金属层结构，包括空气间隙结构。
上述本发明的包括说明书摘要中所描述的说明性实施方式并不意味着是详尽的或将本发明限制在所公开的精确形式。虽然在此描述的本发明的具体实施方式和实例仅仅是举例说明的目的，但是相关领域的普通技术人员将意识到在本发明的范围内进行各种等效修改都是可能的。
可以根据上述详细描述对本发明进行这些修改。在下述权利要求中使用的术语不能解释为将本发明限定到在说明书和权利要求书中所公开的具体实施方式。相反，本发明的范围将完全通过以下权利要求限定，而权利要求将通过已制定的权利要求的理解原则来进行解释。

Claims (26)

1.一种集成电路装置，包括：
集成电路管芯，其上表面上形成有金属凸块；以及
焊料限定层，形成在所述集成电路管芯上，其中所述焊料限定层遮蔽所述金属凸块的上表面的一部分，由此防止焊料润湿所述金属凸块的被遮蔽部分。
2.根据权利要求1所述的装置，其中所述焊料限定层包括光可限定聚合介电材料。
3.根据权利要求1所述的装置，其中所述焊料限定层包括介电材料。
4.根据权利要求1所述的装置，其中所述焊料限定层包括选自由环氧材料、硅树脂、聚酰亚胺、不可润湿金属和氮化物构成的组的材料。
5.根据权利要求1所述的装置，其中所述焊料限定层填充所述金属凸块之间的间隔并且使所述金属凸块彼此电隔离。
6.根据权利要求1所述的装置，其中所述被遮蔽部分包括所述金属凸块的上表面的外边缘。
7.根据权利要求1所述的装置，其中所述金属凸块包括选自由铜、镍、钯、钴、铁、银、金和铂构成的组的金属。
8.根据权利要求1所述的装置，其中所述焊料限定层遮蔽所述金属凸块的上表面的30%至50%。
9.一种集成电路装置，包括：
具有器件层的半导体基板、多个金属化层、钝化层以及形成在所述钝化层上的电耦合到所述金属化层中的至少一个金属化层上的金属凸块；以及
形成在所述钝化层上的焊料限定层，该焊料限定层遮蔽所述金属凸块的上表面的外边缘，由此使得所述上表面的外边缘不能被焊接材料润湿。
10.根据权利要求9所述的装置，其中所述焊料限定层包括光可限定聚合介电材料。
11.根据权利要求9所述的装置，其中所述焊料限定层包括介电材料。
12.根据权利要求9所述的装置，其中所述焊料限定层包括选自由环氧树脂、硅树脂、聚酰亚胺、不可润湿金属和氮化物构成的组的材料。
13.根据权利要求9所述的装置，其中所述焊料限定层遮蔽所述金属凸块的上表面的30%至50%。
14.一种集成电路装置，包括：
集成电路管芯，其上表面上形成有金属凸块；
形成在所述集成电路管芯上的焊料限定层，其中所述焊料限定层遮蔽所述金属凸块的上表面的外边缘，以使得所述外边缘不能被焊料润湿；以及
安装在所述金属凸块上的焊球，其中由于所述焊料限定层，所述焊球不润湿所述金属凸块的上表面的外边缘。
15.根据权利要求14所述的装置，其中所述焊料限定层包括光可限定聚合介电材料。
16.根据权利要求14所述的装置，其中所述焊料限定层包括介电材料。
17.根据权利要求14所述的装置，其中所述焊料限定层包括选自由环氧树脂、硅树脂、聚酰亚胺、不可润湿金属和氮化物构成的组的材料。
18.根据权利要求14所述的装置，其中所述焊料限定层遮蔽所述金属凸块的上表面的30%至50%。
19.根据权利要求14所述的装置，其中所述金属凸块包括选自由铜、镍、钯、钴、铁、银、金和铂构成的组的金属。
20.一种集成电路装置，包括：
集成电路管芯，其上表面上形成有第一金属凸块；
形成在所述集成电路管芯上的焊料限定层，其中所述焊料限定层遮蔽所述金属凸块的上表面的外边缘，以使得所述外边缘不能被焊料润湿；以及
安装在所述第一金属凸块上的第二金属凸块，其中由于所述焊料限定层，第二金属凸块球并不接触所述第一金属凸块的上表面的外边缘。
21.根据权利要求20所述的装置，其中所述焊料限定层包括光可限定聚合介电材料。
22.根据权利要求20所述的装置，其中所述焊料限定层包括介电材料。
23.根据权利要求20所述的装置，其中所述焊料限定层包括选自由环氧树脂、硅树脂、聚酰亚胺、不可润湿金属和氮化物构成的组的材料。
24.根据权利要求20所述的装置，其中所述焊料限定层遮蔽所述金属凸块的上表面的30%至50%。
25.根据权利要求20所述的装置，其中所述第一金属凸块包括选自由铜、镍、钯、钴、铁、银、金和铂构成的组的金属。
26.根据权利要求20所述的装置，其中所述第二金属凸块包括选自由铜、镍、钯、钴、铁、银、金和铂构成的组的金属。
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