CN102172879A - Method for processing soft and crisp LBO crystals based on consolidated abrasive polishing pad - Google Patents
Method for processing soft and crisp LBO crystals based on consolidated abrasive polishing pad Download PDFInfo
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- CN102172879A CN102172879A CN2011100430097A CN201110043009A CN102172879A CN 102172879 A CN102172879 A CN 102172879A CN 2011100430097 A CN2011100430097 A CN 2011100430097A CN 201110043009 A CN201110043009 A CN 201110043009A CN 102172879 A CN102172879 A CN 102172879A
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Abstract
The invention discloses a method for processing soft and crisp LBO crystals based on a consolidated abrasive polishing pad, which is characterized by comprising the following steps: firstly, roughly polishing and machining LBO crystals by the polishing pad of diamond consolidated abrasive of which the granularity is less than or equal to 14 micrometers, wherein in the polishing and machining process, the polishing pressure is controlled to 50-600g/cm<2>, the revolving speed of a polisher is controlled to 10-200 rpm, the pH value of a polishing solution adopted by polishing is controlled to 2-6, and the temperature of the polishing solution is 20-30DEG C to roughly polish the LBO crystals; and then, finely polishing and machining the LBO crystals obtained from the rough machining by the polishing pad of cerium oxide consolidated abrasive of which the granularity is not more than 3 micrometers, wherein the polishing pressure is controlled to 50-600g/cm<2> in the fine polishing and machining process, the revolving speed for polishing is controlled to 10-200rpm, the pH value of a polishing solution adopted by polishing is controlled to 2-6, and the temperature of the polishing solution is 20-30DEG C until the surface quality satisfies a set requirement. The method has the advantages of high processing efficiency and high finished product rate and does not cause environmental pollution.
Description
Technical field
The present invention relates to a kind of processing method of functional material, the polishing processing method of especially a kind of functional crystal material LBO, specifically a kind of processing method of the soft crisp lbo crystal based on concretion abrasive polishing pad.
Background technology
Three lithium borate (LiB
3O
5) (abbreviation lbo crystal) be the functional crystal material that is possessed of good qualities, be widely used in research and applications such as all-solid state laser, electric light, medical science, little processing, and the large scale lbo crystal field such as laser controlled fusion engineering system of lighting a fire in the works in frequency converter, country that laser isotope separates is with a wide range of applications.The growth of China's functional crystal and relevant nonlinear optical crystal occupies the first place in the world, and the polishing processing of crystal with also have no small gap in the world, become a bottleneck of restriction China functional crystal industry development.Lbo crystal collapses defectives such as limit, depression, fracture except what have that hard crisp functional crystal occurs easily, also has the embedding or the absorption defective of hard particles.And application requirements single-crystal surface ultra-smooth, zero defect, the not damaged of lbo crystal.The crudy of lbo crystal and the quality of precision directly have influence on the performance of its device.When plane of crystal has pit, micro-crack, plastic deformation, lattice defect, particle to embed or during tiny flaw such as absorption, can cause diffuse transmission influence laser quality during the laser irradiation, or entail epitaxial film, and cause the inefficacy of film, become the critical defect of device.The present processing technology complexity of lbo crystal, processing cost height, working (machining) efficiency are low, the surface quality after the processing is also bad.It is not have free abrasive in the polishing fluid that concretion abrasive polishes maximum characteristics, has avoided hard particles to embed or the absorption plane of crystal, has improved working (machining) efficiency and surface quality significantly.Simultaneously, have polishing automatic stop function, improve the surface cleanness degree of institute's rapidoprint; Because abrasive material is cemented on the polishing pad, can be as free abrasive polish the serious waste abrasive material, thereby cost is lower; Simultaneously, also significantly reducing the post processing workload and the cost of polishing, reduce a large amount of pollutions that are harmful to chemical substances to environment in polishing waste liquid and the back polishing process, is the green processing technology.Therefore, the concretion abrasive polishing has received great concern.
Main free abrasive cerium oxide and the pitch dish of adopting of lbo crystal polishing at present polishes.Free abrasive polishes soft crisp material, and particle scratches, embeds or be adsorbed on plane of crystal easily and forms manufacturing deficiency, and the surface has pit, cut, micro-crack, particle to embed or the absorption equivalent damage, and processing back plane of crystal quality is totally bad; And processing mainly depends on manual polishing or the polishing of traditional single shaft machine, and the polishing uncertain factor is many, and free abrasive polishing pad serious wear needs regularly finishing, and material is removed inhomogeneous, poor repeatability; The finishing of polishing pad relies on processor's years of researches and rich experience, and material is removed inhomogeneous, and working (machining) efficiency is low, poor repeatability.Complex process, each operation to processing auxiliary material and machined parameters require different; The complicated continuous workpiece loading and unloading easy damaged of technology surface of the work, the conversion of technology and anchor clamps simultaneously all needs to clean, and cleans difficulty; The use of a large amount of polishing fluids, the processing cost height.
Summary of the invention
When the objective of the invention is to polish soft crisp lbo crystal at existing free abrasive because of containing the hard abrasive material in the polishing fluid, scratch, embed or be adsorbed on plane of crystal easily and form manufacturing deficiency, the surface has pit, cut, micro-crack, particle to embed or the absorption equivalent damage, the lbo crystal of free abrasive polishing simultaneously complex process, a large amount of polishing fluids that use, processing cost height (cost of polishing fluid account for processing cost 70%); Difficulty is cleaned in the back, and a series of problems such as a large amount of harmful chemical substance contaminated environment are invented a kind of working (machining) efficiency height in polishing waste liquid and the cleaning process, and technology is simple, and surface quality is good; Polishing fluid does not contain abrasive material, and clean to simplify the back, the processing method based on the soft crisp lbo crystal of concretion abrasive polishing pad that processing cost is low.
Technical scheme of the present invention is:
A kind of processing method of the soft crisp lbo crystal based on concretion abrasive polishing pad is characterized in that it may further comprise the steps:
At first, the diamond concretion abrasive polishing pad that is not more than 14 microns with granularity carries out rough polishing processing to lbo crystal, and the control polish pressure is 50 ~ 600g/cm in the polishing processing
2The rotating speed of polishing machine is controlled at 10 ~ 200rpm, and control is polished the pH value of used polishing fluid between 2 ~ 6, the temperature of polishing fluid is between 20 ~ 30 ℃, finish the rough polishing of lbo crystal, the surface planarity of lbo crystal should reach required precision after the rough polishing, and its dimensional thickness reaches required precision substantially;
Secondly, be not more than 3 microns cerium oxide concretion abrasive polishing pad with granularity again the lbo crystal of above-mentioned rough polishing gained is carried out finishing polish processing, the control polish pressure is at 50 ~ 600g/cm in the finishing polish process
2Between, polishing rotating speed and be controlled between 10 ~ 200rpm, the pH value of regulating the used polishing fluid of polishing simultaneously is between 2 ~ 6, and the temperature of control polishing fluid satisfies the setting requirement until surface roughness between 20 ~ 30 ℃.
Described polishing fluid is a deionized water.
The pH value conditioning agent of described polishing fluid is one or more the combination in hydrochloric acid, hydrogen peroxide, ammoniacal liquor, hydroxylamine, TMAH, ethylenediamine or triethanolamine, citric acid, acetate or sodium acetate, sodium dihydrogen phosphate or the clorox.
Beneficial effect of the present invention:
Concretion abrasive polishing technology of the present invention can be widely used in the polishing processing of hard brittle materials such as semiconductor, glass, optical crystal, pottery, and the surface damage after the processing is little, surface quality is high.
Concretion abrasive polishing of the present invention, compare with traditional free abrasive polishing, abrasive material is cemented on the polishing pad, polishing fluid is the deionized water that does not have free abrasive, avoided hard particles to embed or be adsorbed on plane of crystal to greatest extent, be difficult for producing cut, pit equivalent damage, no sub-surface damage, surface quality height.And traditional free abrasive polishes soft crisp lbo crystal, and hard particles scratches, embeds or be adsorbed on plane of crystal easily and forms manufacturing deficiency, and the surface has pit, cut, micro-crack, particle to embed or the absorption equivalent damage.
Abrasive material of the present invention is cemented on the polishing pad, abrasive material utilization rate height; Simultaneously, also having significantly reduced post processing workload and cost, reduced a large amount of pollutions that are harmful to chemical substances to environment in polishing waste liquid and the cleaning process, is the green processing technology.And in the free abrasive polishing process, the abrasive material utilization rate utmost point, working (machining) efficiency is not high, the abrasive material random distribution, the distribution density inequality causes workpiece grinding cutting amount inequality, and workpiece face shape is difficult to control; A large amount of harmful chemical substance contaminated environment in polishing waste liquid and the cleaning process, the complicated and cost height of post processing.
The specific embodiment
The present invention is further illustrated below in conjunction with embodiment.
A kind of processing method of the soft crisp lbo crystal based on Gu Jie Mo material polishing pad, it comprises rough polishing processing and finishing polish processing:
Rough polishing adds man-hour, and the diamond concretion abrasive polishing pad that is not more than 14 microns with granularity polishes processing to lbo crystal, and the control polish pressure is 50 ~ 600g/cm in the polishing processing
2The rotating speed of polishing machine (can select the single or double polishing machine for use) is controlled at 10 ~ 200rpm, and control is polished the pH value of used polishing fluid between 2 ~ 6, the temperature of polishing fluid is between 20 ~ 30 ℃, finish the roughing of lbo crystal, the surface planarity of lbo crystal should reach required precision after the rough polishing, and its dimensional thickness reaches required precision substantially; Wherein surface planarity requires to be lower than λ/10 (λ is that flatness detects and use wavelength, and generally value is λ=632nm), thickness and precision ± 0.02mm.
Finishing polish adds the cerium oxide concretion abrasive polishing pad that can adopt man-hour granularity to be not more than 3 microns the lbo crystal of above-mentioned roughing gained is carried out finishing polish processing, and the control polish pressure is at 50 ~ 600g/cm in the finishing polish process
2Between, the polishing rotating speed is controlled between 10 ~ 200rpm, and the pH value of regulating the used polishing fluid of polishing simultaneously is between 2 ~ 6, and the temperature of control polishing fluid is between 20 ~ 30 ℃, satisfy the setting requirement until surface roughness, be that surface roughness should be lower than 0.5nm, the specification requirement when surface planarity and thickness and precision keep roughing, promptly surface planarity requires to be lower than λ/10 (λ is that flatness detects and uses wavelength, general value is λ=632nm), thickness and precision ± 0.02mm,, surface damage is little.
The polishing fluid that uses in the polishing process should be the deionized water of regulating pH value, and the pH value conditioning agent can adopt one or more the combination in hydrochloric acid, hydrogen peroxide, ammoniacal liquor, hydroxylamine, TMAH, ethylenediamine or triethanolamine, citric acid, acetate or sodium acetate, sodium dihydrogen phosphate or the clorox.
The component of diamond abrasive polishing pad of the present invention and preparation method can adopt the applicant to be 2008100227414 or 2008102440960 method and to fill a prescription and realized at the application number of first to file, it is that 200710133580.1 prescription is realized that its preparation method can be with reference to the preparation method of applicant at the relevant concretion abrasive polishing pad of first to file at the application number of first to file that the prescription of cerium oxide abrasives polishing pad can adopt the applicant.
The part that the present invention does not relate to prior art that maybe can adopt all same as the prior art is realized.
Claims (3)
1. processing method based on the soft crisp lbo crystal of concretion abrasive polishing pad is characterized in that it may further comprise the steps:
At first, the diamond concretion abrasive polishing pad that is not more than 14 microns with granularity carries out rough polishing processing to lbo crystal, and the control polish pressure is 50 ~ 600g/cm in the polishing processing
2, the rotating speed of polishing machine is controlled at 10 ~ 200rpm, and the pH value of the used polishing fluid of control polishing is between 2 ~ 6, and the temperature of polishing fluid is finished the rough polishing of lbo crystal between 20 ~ 30 ℃;
Secondly, be not more than 3 microns cerium oxide concretion abrasive polishing pad with granularity again the lbo crystal of above-mentioned rough polishing gained is carried out finishing polish processing, the control polish pressure is at 50 ~ 600g/cm in the finishing polish process
2Between, polishing rotating speed and be controlled between 10 ~ 200rpm, the pH value of regulating the used polishing fluid of polishing simultaneously is between 2 ~ 6, and the temperature of control polishing fluid satisfies the setting requirement until surface roughness between 20 ~ 30 ℃.
2. processing method according to claim 1 is characterized in that described polishing fluid is a deionized water.
3. processing method according to claim 1 and 2, the pH value conditioning agent that it is characterized in that described polishing fluid are one or more the combination in hydrochloric acid, hydrogen peroxide, ammoniacal liquor, hydroxylamine, TMAH, ethylenediamine or triethanolamine, citric acid, acetate or sodium acetate, sodium dihydrogen phosphate or the clorox.
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| CN 201110043009 CN102172879B (en) | 2011-02-23 | 2011-02-23 | Method for processing soft and crisp LBO crystals based on consolidated abrasive polishing pad |
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| CN 201110043009 CN102172879B (en) | 2011-02-23 | 2011-02-23 | Method for processing soft and crisp LBO crystals based on consolidated abrasive polishing pad |
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| CN102172879B CN102172879B (en) | 2012-12-26 |
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Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102660198A (en) * | 2012-04-11 | 2012-09-12 | 南京航空航天大学 | Waterless abrasive-free polishing solution for chemical-mechanical polishing of flexible, crisp and deliquescent crystals |
| CN103203681A (en) * | 2013-04-07 | 2013-07-17 | 大连理工大学 | Environment-friendly II-VI class soft fragile crystal grinding and polishing method |
| CN103740329A (en) * | 2014-01-09 | 2014-04-23 | 上海华明高纳稀土新材料有限公司 | Cerium oxide polishing powder and preparation method thereof |
| CN103862354A (en) * | 2014-03-24 | 2014-06-18 | 南京航空航天大学 | Ultrathin single crystal germanium wafer processing method |
| CN104400619A (en) * | 2014-10-20 | 2015-03-11 | 南京航空航天大学 | Processing method for chemically and mechanically polishing tantalum by employing fixed abrasive |
| CN105538047A (en) * | 2015-12-11 | 2016-05-04 | 中国航空工业集团公司北京航空材料研究院 | Surface grinding and polishing method for aviation organic transparent workpiece |
| CN106078487A (en) * | 2016-06-07 | 2016-11-09 | 大连理工常州研究院有限公司 | Nickel-base alloy solidified abrasive grinding and cmp method |
| CN106272034A (en) * | 2016-08-10 | 2017-01-04 | 盐城工学院 | A kind of grinding pad for processing soft brittle crystal material and preparation method thereof |
| CN106925565A (en) * | 2017-02-09 | 2017-07-07 | 同济大学 | A kind of etch cleaner method of lbo crystal |
| CN109262377A (en) * | 2018-11-15 | 2019-01-25 | 首都师范大学 | For being passivated the polishing process of CsI (TI) plane of crystal defect |
| CN109648404A (en) * | 2017-10-11 | 2019-04-19 | 蓝思科技（长沙）有限公司 | A kind of rough polishing light technology of ceramic product |
| CN110539209A (en) * | 2019-08-15 | 2019-12-06 | 大连理工大学 | processing method of thin plate-shaped sapphire wafer |
| CN112706087A (en) * | 2020-12-23 | 2021-04-27 | 济南金刚石科技有限公司 | Polishing disk for rapidly polishing surface of flaky diamond crystal and polishing method thereof |
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| US6632127B1 (en) * | 2001-03-07 | 2003-10-14 | Jerry W. Zimmer | Fixed abrasive planarization pad conditioner incorporating chemical vapor deposited polycrystalline diamond and method for making same |
| CN101096080A (en) * | 2007-06-29 | 2008-01-02 | 南京航空航天大学 | Solidified abrasive lapping polishing pad having self-modifying function and preparation method |
| US20090176443A1 (en) * | 2006-12-22 | 2009-07-09 | Kollodge Jeffrey S | Structured fixed abrasive articles including surface treated nano-ceria filler, and method for making and using the same |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US6632127B1 (en) * | 2001-03-07 | 2003-10-14 | Jerry W. Zimmer | Fixed abrasive planarization pad conditioner incorporating chemical vapor deposited polycrystalline diamond and method for making same |
| US20090176443A1 (en) * | 2006-12-22 | 2009-07-09 | Kollodge Jeffrey S | Structured fixed abrasive articles including surface treated nano-ceria filler, and method for making and using the same |
| CN101096080A (en) * | 2007-06-29 | 2008-01-02 | 南京航空航天大学 | Solidified abrasive lapping polishing pad having self-modifying function and preparation method |
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102660198B (en) * | 2012-04-11 | 2013-10-16 | 南京航空航天大学 | Waterless abrasive-free polishing solution for chemical-mechanical polishing of flexible, crisp and deliquescent crystals |
| CN102660198A (en) * | 2012-04-11 | 2012-09-12 | 南京航空航天大学 | Waterless abrasive-free polishing solution for chemical-mechanical polishing of flexible, crisp and deliquescent crystals |
| CN103203681A (en) * | 2013-04-07 | 2013-07-17 | 大连理工大学 | Environment-friendly II-VI class soft fragile crystal grinding and polishing method |
| CN103740329A (en) * | 2014-01-09 | 2014-04-23 | 上海华明高纳稀土新材料有限公司 | Cerium oxide polishing powder and preparation method thereof |
| CN103740329B (en) * | 2014-01-09 | 2015-03-25 | 上海华明高纳稀土新材料有限公司 | Cerium oxide polishing powder and preparation method thereof |
| CN103862354A (en) * | 2014-03-24 | 2014-06-18 | 南京航空航天大学 | Ultrathin single crystal germanium wafer processing method |
| CN104400619B (en) * | 2014-10-20 | 2017-01-25 | 南京航空航天大学 | Processing method for chemically and mechanically polishing tantalum by employing fixed abrasive |
| CN104400619A (en) * | 2014-10-20 | 2015-03-11 | 南京航空航天大学 | Processing method for chemically and mechanically polishing tantalum by employing fixed abrasive |
| CN105538047A (en) * | 2015-12-11 | 2016-05-04 | 中国航空工业集团公司北京航空材料研究院 | Surface grinding and polishing method for aviation organic transparent workpiece |
| CN106078487A (en) * | 2016-06-07 | 2016-11-09 | 大连理工常州研究院有限公司 | Nickel-base alloy solidified abrasive grinding and cmp method |
| CN106272034A (en) * | 2016-08-10 | 2017-01-04 | 盐城工学院 | A kind of grinding pad for processing soft brittle crystal material and preparation method thereof |
| CN106925565A (en) * | 2017-02-09 | 2017-07-07 | 同济大学 | A kind of etch cleaner method of lbo crystal |
| CN109648404A (en) * | 2017-10-11 | 2019-04-19 | 蓝思科技（长沙）有限公司 | A kind of rough polishing light technology of ceramic product |
| CN109262377A (en) * | 2018-11-15 | 2019-01-25 | 首都师范大学 | For being passivated the polishing process of CsI (TI) plane of crystal defect |
| CN110539209A (en) * | 2019-08-15 | 2019-12-06 | 大连理工大学 | processing method of thin plate-shaped sapphire wafer |
| CN110539209B (en) * | 2019-08-15 | 2021-05-25 | 大连理工大学 | Processing method of thin plate-shaped sapphire wafer |
| CN112706087A (en) * | 2020-12-23 | 2021-04-27 | 济南金刚石科技有限公司 | Polishing disk for rapidly polishing surface of flaky diamond crystal and polishing method thereof |
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| CN102172879B (en) | 2012-12-26 |
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