CN102201386A - 方形扁平无引线半导体封装及其制作方法 - Google Patents

方形扁平无引线半导体封装及其制作方法 Download PDF

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CN102201386A
CN102201386A CN2011101081977A CN201110108197A CN102201386A CN 102201386 A CN102201386 A CN 102201386A CN 2011101081977 A CN2011101081977 A CN 2011101081977A CN 201110108197 A CN201110108197 A CN 201110108197A CN 102201386 A CN102201386 A CN 102201386A
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wire
terminal lead
expansion
bonding
quad flat
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CN102201386B (zh
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谢东宪
陈南诚
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MediaTek Inc
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MediaTek Inc
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    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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Abstract

一种方形扁平无引线半导体封装及其制作方法，所述封装包含：晶粒附着垫；半导体晶粒，安装于晶粒附着垫之上；至少一内部端子引线，位于靠近晶粒附着垫的位置；第一焊线，用于将所述内部端子引线焊接至半导体晶粒；至少一扩展的外部端子引线，位于沿着方形扁平无引线半导体封装外围的位置；至少一中间端子，位于所述内部端子引线与所述扩展的外部端子引线之间；第二焊线，用于将所述中间端子焊接至半导体晶粒；第三焊线，用于将所述中间端子焊接至所述扩展的外部端子引线。上述封装及其制作方法，能够以较低成本封装表面贴装元件，使其产出率提高并使其占用印刷电路板的面积减少。

Description

方形扁平无引线半导体封装及其制作方法
技术领域
本发明有关于一种芯片封装，且特别有关于一种具有扩展的端子引线的高脚数(high-pin-count)方形扁平无引线(quad flat non-lead，以下简称QFN)半导体封装及其相关方法。
背景技术
随着电子产品的小型化，手持产品的市场不断扩张。主要受手机及数字助理市场的驱动，所述装置的制造商正面临着产品体积压缩以及更多类个人计算机功能的需求的挑战。而额外增加的功能仅能通过高性能的逻辑集成电路结合增加的内存容量来达成。这种挑战，意味着更小的印刷电路板，其为表面贴装元件制造商设计产品，以占用可能的最小面积带来了压力。
当前的手持产品市场中，许多广泛使用的元件开始从有引线形式向无引线形式过渡。手持产品制造商的主要驱动力是由于这些元件的较小附着面积而节省的印刷电路板空间。此外，同提高的电子性能一样，绝大多数元件在重量及高度上仍可减少。由于主要的芯片尺寸封装(chip scale package)已转向无引线设计，因此节省出的额外空间可用于配置附加的装置功能所需的元件。由于无引线设计可使用许多现有的导线架(leadframe)工艺，因此产品线的转换成本可降至最低。
类似于有引线元件，无引线设计使用焊线键合作为集成电路(以下简称IC)与导线架之间的主要连接方式。然而，由于独特的安放位置几何形状以及外观尺寸密度，传统的焊线键合工艺可能无法以高产出率进行生产。对于这些设计来说，需要额外的焊线键合性能以及改进的工艺以达成可接受的产品产出率。
专利号为6,238,955的美国专利揭露了一种低脚数芯片封装，其包含用于接收半导体芯片的晶粒垫以及电性耦接至半导体芯片的多个连接垫，其中晶粒垫及连接垫都具有凹式外形。封装主体形成于半导体芯片之上，晶粒垫及连接垫的一部分由封装主体底部延伸出封装主体。
专利号为6,261,864的美国专利揭露了一种芯片封装。半导体芯片、晶粒垫以及连接垫被封装于封装主体中，晶粒垫及连接垫的较低表面露于封装主体之外。晶粒垫及连接垫是由蚀刻形成，因此其具有凹式外形，且其厚度比由电镀形成的传统晶粒垫及连接垫厚得多。
专利号为6,306,685的美国专利揭露了一种凸点芯片载体(bump chip carrier)成形方法。干膜被用于具有合适厚度的铜底板的顶面与底面。电路图样形成于每一干膜之上，金属被镀于每一电路图样之上以形成连接垫及散热通道，而晶粒附着于铜底板之上。晶粒所附着的铜底板的表面被塑模以形成模层。
专利号为6,342,730的美国专利揭露了一种封装结构，其包含接受半导体芯片的晶粒垫以及电性耦接至晶粒垫的多个连接垫。半导体芯片、晶粒垫以及连接垫被封装于封装主体中，晶粒垫及连接垫的较低表面露于封装主体之外。所述晶粒垫及连接垫都具有大体为凹式的外形。
专利号为6,495,909的美国专利揭露了一种芯片封装。半导体芯片、晶粒垫以及连接垫被封装于封装主体中，晶粒垫及连接垫的较低表面露于封装主体之外。晶粒垫及连接垫都具有T形的外形，从而能够延迟水分扩散入封装的时间。
专利号为6,621,140的美国专利揭露了一种半导体封装，其具有整体形成于导线架的电感性部分。所述电感性部分可通过焊线键合直接连接于导线架的引线，或间接连接于半导体晶粒的引线或键合垫，以形成电感。
发明内容
为了减少表面贴装元件所占用印刷电路板的面积并提高产品的产出率，特提供以下技术方案：
本发明实施方式提供一种方形扁平无引线半导体封装，包含晶粒附着垫、半导体晶粒、至少一内部端子引线、第一焊线、至少一扩展的外部端子引线、至少一中间端子、第二焊线以及第三焊线。所述半导体晶粒安装于晶粒附着垫之上；所述内部端子引线位于靠近晶粒附着垫的位置；所述第一焊线用于将所述内部端子引线焊接至半导体晶粒；所述扩展的外部端子引线位于沿着方形扁平无引线半导体封装外围的位置；所述中间端子位于所述内部端子引线与所述扩展的外部端子引线之间；所述第二焊线用于将所述中间端子焊接至半导体晶粒；以及所述第三焊线用于将所述中间端子焊接至所述扩展的外部端子引线；其中，该中间端子所占用的键合面面积比该扩展的外部端子引线所占用的键合面面积小。
本发明实施方式另提供一种方形扁平无引线半导体封装，包含晶粒附着垫、半导体晶粒、至少一内部端子引线、第一焊线、至少一扩展的外部端子引线、至少一中间端子、第二焊线以及走线。所述半导体晶粒安装于晶粒附着垫之上；所述内部端子引线位于靠近晶粒附着垫的位置；所述第一焊线用于将所述内部端子引线焊接至半导体晶粒；所述扩展的外部端子引线位于沿着方形扁平无引线半导体封装外围的位置；所述中间端子位于所述内部端子引线与所述扩展的外部端子引线之间；所述第二焊线用于将所述中间端子焊接至半导体晶粒；以及所述走线用于将所述中间端子连接至所述扩展的外部端子引线；其中，该中间端子所占用的键合面面积比该扩展的外部端子引线所占用的键合面面积小。
本发明实施方式另提供一种方形扁平无引线半导体封装的制作方法，包含半蚀刻载体的第一面，以形成引线阵列的顶部以及晶粒附着垫的晶粒附着面，其中引线阵列包含至少一内部端子引线、至少一扩展的外部端子引线以及至少一中间端子，所述内部端子引线位于靠近晶粒附着垫的位置，所述扩展的外部端子引线位于沿着方形扁平无引线半导体封装外围的位置，所述中间端子位于所述内部端子引线与所述扩展的外部端子引线之间；将半导体晶粒安装于晶粒附着面；通过第一导体焊线将半导体晶粒电性连接至所述内部端子引线以及所述中间端子；通过第二导体焊线将所述中间端子电性连接至所述扩展的外部端子引线；利用模套封装半导体晶粒、第一导体焊线以及第二导体焊线；以及半蚀刻所述载体的与第一面相对的第二面，以形成引线阵列的底部以及该晶粒附着垫；其中，该中间端子所占用的键合面面积比该扩展的外部端子引线所占用的键合面面积小。
一种方形扁平无引线半导体封装的制作方法，包含半蚀刻载体的第一面，以形成引线阵列的顶部以及晶粒附着垫的晶粒附着面，其中该引线阵列包含至少一内部端子引线、至少一扩展的外部端子引线以及至少一中间端子，该内部端子引线位于靠近该晶粒附着垫的位置，该扩展的外部端子引线位于沿着该方形扁平无引线半导体封装外围的位置，该中间端子位于该内部端子引线与该扩展的外部端子引线之间；将半导体晶粒安装于该晶粒附着面；通过第一导体焊线将该半导体晶粒电性连接至该内部端子引线；通过第二导体焊线将该半导体晶粒电性连接至该中间端子；通过走线将该中间端子电性连接至该扩展的外部端子引线；利用模套封装该半导体晶粒、该第一导体焊线、该第二导体焊线；以及半蚀刻该载体的与该第一面相对的第二面，以形成该引线阵列的底部以及该晶粒附着垫；其中，该中间端子所占用的键合面面积比该扩展的外部端子引线所占用的键合面面积小。
以上所述的方形扁平无引线半导体封装及其制作方法，能够以较低的成本封装表面贴装元件，使其产出率提高并使其占用印刷电路板的面积减少。
附图说明
图1是依本发明实施例的具有中间端子的QFN半导体封装的剖面示意图。
图2是依本发明实施例的具有中间端子的QFN半导体封装的布线的上视图。
图3是依本发明另一实施例的外部端子引线与中间端子连接的放大上视图。
图4-11是依本发明实施例的用于例示图1所示的QFN半导体封装的制作方法的剖面示意图。
图12是依本发明另一实施例的具有内部端子的QFN半导体封装的剖面示意图。
具体实施方式
在说明书及权利要求书当中使用了某些词汇来指称特定的元件。所属技术领域的技术人员应可理解，硬件制造商可能会用不同的名词来称呼同一个元件。本说明书及权利要求书并不以名称的差异作为区分元件的方式，而是以元件在功能上的差异作为区分的准则。在通篇说明书及权利要求项中所提及的“包括”为一开放式的用语，故应解释成“包括但不限定于”。此外，“耦接”一词在此包括任何直接及间接的电气连接手段。因此，若文中描述第一装置耦接于第二装置，则代表第一装置可直接电气连接于第二装置，或通过其它装置或连接手段间接地电气连接至第二装置。
请一并参考图1及图2。图1是依本发明实施例的具有中间端子的QFN半导体封装的剖面示意图。图2是依本发明所述实施例的具有中间端子的QFN半导体封装的布线的上视图。如图1及图2所示，QFN半导体封装1包含具有凹区10a的晶粒附着垫(die attach pad)10。半导体晶粒20附着于晶粒附着垫10的凹区10a中。晶粒附着垫10具有底面10b，其露于模套(mold cap)30之外。晶粒附着垫10可包含电源或接地环11。至少一列内部端子引线12位于靠近晶粒附着垫10的位置。至少一列扩展的外部端子引线14位于沿着QFN半导体封装1外围的位置。至少一列中间端子13位于内部端子引线12与扩展的外部端子引线14之间。依本发明的另一个实施例，晶粒附着垫10可省略。
半导体晶粒20具有顶面20a，其上有多个键合垫21(包含21a、21b及21c)。半导体晶粒20上的键合垫21a通过金焊线22焊接至电源或接地球环11。半导体晶粒20上的键合垫21b通过金焊线24焊接至内部端子引线12。半导体晶粒20上的键合垫21c通过金焊线26焊接至中间端子13。
依本实施例，外部端子引线14与半导体晶粒的距离超过最大焊线长度，所述最大焊线长度是由焊接工具或焊线机为半导体晶粒的特定的最小焊盘开窗尺寸而提供。如本领域熟悉该项技术的技术人员所知，焊线机所提供的最大焊线长度取决于晶粒上键合垫的最小焊盘开窗尺寸。
举例来说，对于具有最小焊盘开窗尺寸为43微米(micrometer)的键合垫21来说，典型的焊线机仅可提供140密耳(mil)的最大焊线长度，即3556微米。依本发明的实施例，金焊线26具有焊线键合工具或焊线机可为特定的最小焊盘开窗尺寸而提供的最大焊线长度。为电性连接键合垫21c与外部端子引线14，中间端子13通过金焊线28焊线键合至外部端子引线14。
应可理解，上述单一列的中间端子13的排列或布线仅仅是用于例示目的，其不能视为对本发明的范围的限制。在另一个实施例中，中间端子13可被排列成两列或更多列，或可被排列成相互交错的两列。依本实施例，每一中间端子13所占用的键合面面积比每一外部端子引线14所占用的键合面面积小，而外部端子引线14具有与内部端子引线12大体相同的键合面面积。
图2较佳地展现了较小的中间端子13。举例来说，每一内部端子引线12与外部端子引线14的尺寸可为270微米×270微米，而每一中间端子13的尺寸可为150微米×150微米。应可理解，每一中间端子13的键合面面积都必须符合金焊线26与28的焊球(squash ball)的需求，上述焊球未在图中明确画出。
图3是依本发明另一实施例的外部端子引线与中间端子连接的放大上视图。如图3所示，第一列外部端子引线14’通过走线15电性连接至中间端子13’，较远的第二列外部端子引线14”则通过金焊线28电性连接至中间端子13”。
图4-11是依本发明实施例的用于例示图1所示的具有中间端子的QFN半导体封装的制作方法的剖面示意图，其中相同的标号代表相同的区域、层或元件。如图4所示，提供铜载体40。图样化光阻膜42a及42b分别形成于铜载体40的两个相对面第一面40a及第二面40b之上，以在铜载体40上定义引线阵列图样52及晶粒附着垫图样54。
如图5所示，执行电镀工艺，以利用可键合金属层62(例如镍、金或其组合)填充铜载体40的两个相对面上的引线阵列图样52及晶粒附着垫图样54。如图6所示，将图样化光阻膜42a及42b剥离以露出铜载体40的表面的一部分。
如图7所示，接着执行铜蚀刻工艺，以从第一面40a开始半蚀刻铜载体40的露出的部分。在第一面40a上形成凹区10a。在铜蚀刻工艺中，可键合金属层62可作为硬掩膜。依本实施例，图4至7所描述的步骤都可以在导线架制作厂完成。
如图8所示，半导体晶粒20附着于凹区10a中，举例来说，可利用表面贴装技术(Surface Mount technology，SMT)或其它适合的方法达成。半导体晶粒20具有顶面20a，顶面20a具有多个键合垫(未明确画出)。
如图9所示，执行焊线键合工艺，以分别通过金焊线22、24、26及28电性连接半导体晶粒20的顶面20a上的键合垫21与对应的端子引线。如前所述，焊线机在焊线键合工艺中提供的最大焊线长度取决于半导体晶粒20上键合垫的最小焊盘开窗尺寸。举例来说，对于具有最小焊盘开窗尺寸为43微米的键合垫来说，典型的焊线机仅可提供140密耳(3556微米)的最大焊线长度。依本实施例，金焊线26具有焊线键合工具或焊线机可为特定的最小焊盘开窗尺寸而提供的最大焊线长度。
如图10所示，执行塑模(molding)工艺。金焊线22、24、26及28、半导体晶粒20以及铜载体40的第一面40a被封装在膜套30中，膜套30可例如环氧树脂(epoxy resin)。
如图11所示，在塑模工艺之后，执行铜蚀刻工艺以从第二面40b开始半蚀刻铜载体40上未被可键合金属层62覆盖的部分，从而形成晶粒附着垫10、电源或接地环11、内部端子引线12、中间端子13以及外部端子引线14。依本实施例，电源或接地环11可与晶粒附着垫10一起形成，且为环状。电源或接地环11可为连续的或非连续的。晶粒附着垫10、内部端子引线12以及外部端子引线14分别具有大体共面的暴露的底面10b、12b以及14b。暴露的底面10b、12b以及14b最终分别键合至印刷电路板。中间端子13具有凹式底面13b，且凹式底面13b并不与暴露的底面10b、12b以及14b中任何一个共面。依本实施例，图8至11所描述的步骤都可以在组装厂或封装厂完成。
图12是依本发明另一实施例的具有内部端子的QFN半导体封装的剖面示意图。如图12所示，图中QFN半导体封装1a与图1中QFN半导体封装1的区别在于，图12的中间端子13的凹式底面13b被保护层70所覆盖，例如胶粘剂(glue)或其它适合的绝缘材料，以防止与印刷电路板之间发生短路。
以上所述仅为本发明的较佳实施例，凡依本发明权利要求所做的均等变化与修饰，皆应属本发明的涵盖范围。

Claims (18)

1.一种方形扁平无引线半导体封装，包含：
晶粒附着垫；
半导体晶粒，安装于该晶粒附着垫之上；
至少一内部端子引线，位于靠近该晶粒附着垫的位置；
第一焊线，用于将该内部端子引线焊接至该半导体晶粒；
至少一扩展的外部端子引线，位于沿着该方形扁平无引线半导体封装外围的位置；
至少一中间端子，位于该内部端子引线与该扩展的外部端子引线之间；
第二焊线，用于将该中间端子焊接至该半导体晶粒；以及
第三焊线，用于将该中间端子焊接至该扩展的外部端子引线；
其中，该中间端子所占用的键合面面积比该扩展的外部端子引线所占用的键合面面积小。
2.如权利要求1所述的方形扁平无引线半导体封装，更包含模套，用于封装该半导体晶粒、该第一焊线、该第二焊线以及该第三焊线。
3.如权利要求1所述的方形扁平无引线半导体封装，其特征在于：该扩展的外部端子引线具有与该内部端子引线相同的键合面面积。
4.如权利要求1所述的方形扁平无引线半导体封装，其特征在于：该中间端子具有凹式底面，该凹式底面不与该内部端子引线的底部键合面及该扩展的外部端子引线的底部键合面共面。
5.如权利要求4所述的方形扁平无引线半导体封装，其特征在于：该凹式底面被保护层覆盖。
6.一种方形扁平无引线半导体封装，包含：
晶粒附着垫；
半导体晶粒，安装于该晶粒附着垫之上；
至少一内部端子引线，位于靠近该晶粒附着垫的位置；
第一焊线，用于将该内部端子引线焊接至该半导体晶粒；
至少一扩展的外部端子引线，位于沿着该方形扁平无引线半导体封装外围的位置；
至少一中间端子，位于该内部端子引线与该扩展的外部端子引线之间；
第二焊线，用于将该中间端子分别焊接至该半导体晶粒；以及
走线，用于将该中间端子连接至该扩展的外部端子引线；
其中，该中间端子所占用的键合面面积比该扩展的外部端子引线所占用的键合面面积小。
7.如权利要求6所述的方形扁平无引线半导体封装，更包含模套，用于封装该半导体晶粒、该第一焊线以及该第二焊线。
8.如权利要求6所述的方形扁平无引线半导体封装，其特征在于：该扩展的外部端子引线具有与该内部端子引线相同的键合面面积。
9.如权利要求6所述的方形扁平无引线半导体封装，其特征在于：该中间端子具有凹式底面，该凹式底面不与该内部端子引线的底部键合面及该扩展的外部端子引线的底部键合面共面。
10.如权利要求9所述的方形扁平无引线半导体封装，其特征在于：该凹式底面被保护层覆盖。
11.一种方形扁平无引线半导体封装的制作方法，包含：
半蚀刻载体的第一面，以形成引线阵列的顶部以及晶粒附着垫的晶粒附着面，其中该引线阵列包含至少一内部端子引线、至少一扩展的外部端子引线以及至少一中间端子，该内部端子引线位于靠近该晶粒附着垫的位置，该扩展的外部端子引线位于沿着该方形扁平无引线半导体封装外围的位置，该中间端子位于该内部端子引线与该扩展的外部端子引线之间；
将半导体晶粒安装于该晶粒附着面；
通过第一导体焊线将该半导体晶粒电性连接至该内部端子引线；
通过第二导体焊线将该半导体晶粒电性连接至该中间端子；
通过第三导体焊线将该中间端子电性连接至该扩展的外部端子引线；
利用模套封装该半导体晶粒、该第一导体焊线、该第二导体焊线以及该第三导体焊线；以及
半蚀刻该载体的与该第一面相对的第二面，以形成该引线阵列的底部以及该晶粒附着垫；
其中，该中间端子所占用的键合面面积比该扩展的外部端子引线所占用的键合面面积小。
12.如权利要求11所述的方形扁平无引线半导体封装，其特征在于：该扩展的外部端子引线具有与该内部端子引线相同的键合面面积。
13.如权利要求11所述的方形扁平无引线半导体封装的制作方法，其特征在于：该中间端子具有凹式底面，该凹式底面不与该内部端子引线的底部键合面及该扩展的外部端子引线的底部键合面共面。
14.如权利要求13所述的方形扁平无引线半导体封装的制作方法，其特征在于：该凹式底面被保护层覆盖。
15.一种方形扁平无引线半导体封装的制作方法，包含：
半蚀刻载体的第一面，以形成引线阵列的顶部以及晶粒附着垫的晶粒附着面，其中该引线阵列包含至少一内部端子引线、至少一扩展的外部端子引线以及至少一中间端子，该内部端子引线位于靠近该晶粒附着垫的位置，该扩展的外部端子引线位于沿着该方形扁平无引线半导体封装外围的位置，该中间端子位于该内部端子引线与该扩展的外部端子引线之间；
将半导体晶粒安装于该晶粒附着面；
通过第一导体焊线将该半导体晶粒电性连接至该内部端子引线；
通过第二导体焊线将该半导体晶粒电性连接至该中间端子；
通过走线将该中间端子电性连接至该扩展的外部端子引线；
利用模套封装该半导体晶粒、该第一导体焊线、该第二导体焊线；以及
半蚀刻该载体的与该第一面相对的第二面，以形成该引线阵列的底部以及该晶粒附着垫；
其中，该中间端子所占用的键合面面积比该扩展的外部端子引线所占用的键合面面积小。
16.如权利要求15所述的方形扁平无引线半导体封装，其特征在于：该扩展的外部端子引线具有与该内部端子引线相同的键合面面积。
17.如权利要求15所述的方形扁平无引线半导体封装的制作方法，其特征在于：该中间端子具有凹式底面，该凹式底面不与该内部端子引线的底部键合面及该扩展的外部端子引线的底部键合面共面。
18.如权利要求17所述的方形扁平无引线半导体封装的制作方法，其特征在于：该凹式底面被保护层覆盖。
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CN102201385B (zh) 2013-06-12
CN102201388A (zh) 2011-09-28
TWI385763B (zh) 2013-02-11
TW200950013A (en) 2009-12-01
CN102201387B (zh) 2013-11-13
CN101587868B (zh) 2011-07-27
US20100283137A1 (en) 2010-11-11
US8044496B2 (en) 2011-10-25
CN102201388B (zh) 2013-01-02
US20090283882A1 (en) 2009-11-19
US8039319B2 (en) 2011-10-18
CN102201385A (zh) 2011-09-28
US20100285638A1 (en) 2010-11-11
CN102201386B (zh) 2014-04-16
US8039933B2 (en) 2011-10-18
CN102201387A (zh) 2011-09-28
US20100283136A1 (en) 2010-11-11
CN101587868A (zh) 2009-11-25

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