CN102203874B - 以高分辨率可变初始编程脉冲对非易失性存储器编程 - Google Patents
以高分辨率可变初始编程脉冲对非易失性存储器编程 Download PDFInfo
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- CN102203874B CN102203874B CN200980142518.6A CN200980142518A CN102203874B CN 102203874 B CN102203874 B CN 102203874B CN 200980142518 A CN200980142518 A CN 200980142518A CN 102203874 B CN102203874 B CN 102203874B
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5628—Programming or writing circuits; Data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
- G11C16/3486—Circuits or methods to prevent overprogramming of nonvolatile memory cells, e.g. by detecting onset or cessation of current flow in cells and using the detector output to terminate programming
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/562—Multilevel memory programming aspects
- G11C2211/5621—Multilevel programming verification
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/564—Miscellaneous aspects
- G11C2211/5648—Multilevel memory programming, reading or erasing operations wherein the order or sequence of the operations is relevant
Abstract
Description
Claims (16)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10812408P | 2008-10-24 | 2008-10-24 | |
US61/108,124 | 2008-10-24 | ||
US12/427,013 US8045375B2 (en) | 2008-10-24 | 2009-04-21 | Programming non-volatile memory with high resolution variable initial programming pulse |
US12/427,013 | 2009-04-21 | ||
PCT/US2009/058882 WO2010047926A1 (en) | 2008-10-24 | 2009-09-29 | Programming non-volatile memory with high resolution variable initial programming pulse |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102203874A CN102203874A (zh) | 2011-09-28 |
CN102203874B true CN102203874B (zh) | 2014-05-14 |
Family
ID=42117352
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200980142518.6A Active CN102203874B (zh) | 2008-10-24 | 2009-09-29 | 以高分辨率可变初始编程脉冲对非易失性存储器编程 |
Country Status (7)
Country | Link |
---|---|
US (5) | US8045375B2 (zh) |
EP (1) | EP2351041B1 (zh) |
JP (1) | JP5460721B2 (zh) |
KR (1) | KR101600551B1 (zh) |
CN (1) | CN102203874B (zh) |
TW (2) | TWI467585B (zh) |
WO (2) | WO2010047926A1 (zh) |
Families Citing this family (36)
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US8045375B2 (en) * | 2008-10-24 | 2011-10-25 | Sandisk Technologies Inc. | Programming non-volatile memory with high resolution variable initial programming pulse |
US8064252B2 (en) * | 2008-11-21 | 2011-11-22 | Micron Technology, Inc. | Multi-pass programming in a memory device |
KR101616099B1 (ko) | 2009-12-03 | 2016-04-27 | 삼성전자주식회사 | 플래시 메모리 장치 및 그것의 프로그램 방법 |
US8243521B2 (en) * | 2009-12-04 | 2012-08-14 | Micron Technology, Inc. | Method for kink compensation in a memory |
US8964464B2 (en) * | 2010-08-24 | 2015-02-24 | Densbits Technologies Ltd. | System and method for accelerated sampling |
JP5664236B2 (ja) * | 2010-12-29 | 2015-02-04 | ソニー株式会社 | データ記憶装置、情報処理装置、および情報処理方法、並びにプログラム |
US8681562B2 (en) | 2011-01-10 | 2014-03-25 | Micron Technology, Inc. | Memories and methods of programming memories |
US8451662B2 (en) * | 2011-03-03 | 2013-05-28 | Micron Technology, Inc. | Reading memory cell history during program operation for adaptive programming |
US8687431B2 (en) | 2011-07-06 | 2014-04-01 | Micron Technology, Inc. | Programming methods and memories |
TWI471862B (zh) * | 2011-08-19 | 2015-02-01 | Silicon Motion Inc | 快閃記憶體控制器 |
US8811091B2 (en) * | 2011-12-16 | 2014-08-19 | SanDisk Technologies, Inc. | Non-volatile memory and method with improved first pass programming |
KR20130071686A (ko) * | 2011-12-21 | 2013-07-01 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치 및 이의 동작 방법 |
JP5929456B2 (ja) * | 2012-04-17 | 2016-06-08 | ソニー株式会社 | 記憶制御装置、記憶装置、情報処理システム、および、それらにおける処理方法 |
US9053819B2 (en) * | 2012-07-11 | 2015-06-09 | Sandisk Technologies Inc. | Programming method to tighten threshold voltage width with avoiding program disturb |
US8971128B2 (en) | 2013-01-31 | 2015-03-03 | Sandisk Technologies Inc. | Adaptive initial program voltage for non-volatile memory |
US9053810B2 (en) * | 2013-03-08 | 2015-06-09 | Sandisk Technologies Inc. | Defect or program disturb detection with full data recovery capability |
EP2973583B1 (en) * | 2013-03-14 | 2019-05-01 | Silicon Storage Technology Inc. | Non-volatile memory program algorithm device and method |
US9117530B2 (en) * | 2013-03-14 | 2015-08-25 | Sandisk Technologies Inc. | Preserving data from adjacent word lines while programming binary non-volatile storage elements |
US8885418B1 (en) | 2013-09-24 | 2014-11-11 | SanDisk Technologies, Inc. | Adaptive double pulse BCF programming |
KR20150051056A (ko) | 2013-11-01 | 2015-05-11 | 에스케이하이닉스 주식회사 | 반도체 장치 및 그 동작 방법 |
US9218891B2 (en) * | 2013-11-27 | 2015-12-22 | Silicon Motion, Inc. | Data storage device and flash memory control method |
US9123424B2 (en) | 2013-12-17 | 2015-09-01 | Sandisk Technologies Inc. | Optimizing pass voltage and initial program voltage based on performance of non-volatile memory |
US9171628B2 (en) * | 2014-03-13 | 2015-10-27 | Macronix International Co., Ltd. | Incremental step pulse programming (ISPP) scheme capable of determining a next starting pulse based on a current program-verify pulse for improving programming speed |
US9036428B1 (en) * | 2014-06-13 | 2015-05-19 | Sandisk Technologies Inc. | Partial block erase for a three dimensional (3D) memory |
US9324419B2 (en) * | 2014-07-15 | 2016-04-26 | Sandisk Technologies Inc. | Multiple pass programming for memory with different program pulse widths |
US9343141B2 (en) | 2014-07-15 | 2016-05-17 | Sandisk Technologies Inc. | Reprogramming memory with single program pulse per data state |
US9971647B2 (en) * | 2014-07-31 | 2018-05-15 | Winbond Electronics Corporation | Apparatus and method for programming ECC-enabled NAND flash memory |
TWI587302B (zh) * | 2014-12-09 | 2017-06-11 | 華邦電子股份有限公司 | 記憶體編程方法以及記憶體裝置 |
US9570179B2 (en) * | 2015-04-22 | 2017-02-14 | Sandisk Technologies Llc | Non-volatile memory with two phased programming |
JP6783666B2 (ja) * | 2017-01-05 | 2020-11-11 | キオクシア株式会社 | 半導体記憶装置及びメモリシステム |
KR102299186B1 (ko) * | 2017-03-21 | 2021-09-08 | 마이크론 테크놀로지, 인크. | 자동화된 동적 워드 라인 시작 전압을 위한 장치 및 방법 |
CN110634527B (zh) * | 2018-06-25 | 2021-06-22 | 西安格易安创集成电路有限公司 | 一种非易失存储器处理方法及装置 |
CN110634521B (zh) * | 2018-06-25 | 2022-05-24 | 西安格易安创集成电路有限公司 | 一种非易失存储器处理方法及装置 |
CN110838321A (zh) * | 2018-08-17 | 2020-02-25 | 北京兆易创新科技股份有限公司 | 一种存储器的编程方法和系统 |
JP7295267B2 (ja) * | 2019-05-22 | 2023-06-20 | 長江存儲科技有限責任公司 | マルチレベルセルnand型フラッシュメモリデバイスのプログラム方法及びmlc nand型フラッシュメモリデバイス |
JP7258697B2 (ja) * | 2019-09-02 | 2023-04-17 | キオクシア株式会社 | 半導体記憶装置 |
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2009
- 2009-04-21 US US12/427,013 patent/US8045375B2/en active Active
- 2009-04-21 US US12/427,007 patent/US8254177B2/en active Active
- 2009-09-29 CN CN200980142518.6A patent/CN102203874B/zh active Active
- 2009-09-29 JP JP2011533215A patent/JP5460721B2/ja not_active Expired - Fee Related
- 2009-09-29 WO PCT/US2009/058882 patent/WO2010047926A1/en active Application Filing
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- 2009-09-29 EP EP09793147.1A patent/EP2351041B1/en not_active Not-in-force
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- 2011-09-20 US US13/237,755 patent/US8223554B2/en active Active
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2012
- 2012-06-05 US US13/488,625 patent/US8422302B2/en active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1902711A (zh) * | 2003-10-29 | 2007-01-24 | 赛芬半导体有限公司 | 用于对非易失性存储器阵列编程的方法、系统和电路 |
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EP2351041A1 (en) | 2011-08-03 |
US8223554B2 (en) | 2012-07-17 |
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US8254177B2 (en) | 2012-08-28 |
KR101600551B1 (ko) | 2016-03-21 |
WO2010047926A1 (en) | 2010-04-29 |
KR20110094287A (ko) | 2011-08-23 |
US8422302B2 (en) | 2013-04-16 |
CN102203874A (zh) | 2011-09-28 |
WO2010047925A1 (en) | 2010-04-29 |
JP2012507105A (ja) | 2012-03-22 |
TWI467585B (zh) | 2015-01-01 |
EP2351041B1 (en) | 2015-01-07 |
US20100103733A1 (en) | 2010-04-29 |
US20120236654A1 (en) | 2012-09-20 |
JP5460721B2 (ja) | 2014-04-02 |
TW201025342A (en) | 2010-07-01 |
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