CN102296276A - Plasma immersion ion implantation device - Google Patents
Plasma immersion ion implantation device Download PDFInfo
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- CN102296276A CN102296276A CN2010102098241A CN201010209824A CN102296276A CN 102296276 A CN102296276 A CN 102296276A CN 2010102098241 A CN2010102098241 A CN 2010102098241A CN 201010209824 A CN201010209824 A CN 201010209824A CN 102296276 A CN102296276 A CN 102296276A
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- ion implantation
- silicon
- immersion ion
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Abstract
The invention discloses a plasma immersion ion implantation device which comprises an ion implantation chamber, a power supply part, an implantation electrode part and a vacuum part, wherein four walls in the ion implantation chamber are provided with liners made of integral materials containing silicon. According to the plasma immersion ion implantation device provided by the invention, the pollution to the inner wall of the chamber when plasma immersion ions are implanted can be reduced, gases entering a reaction chamber are more uniformly distributed, and edge effect of an implantation substrate platform is reduced, thus the uniformity of the plastic immersion ion implantation is increased.
Description
Technical field
The present invention relates to semiconductor processing techniques, have the plasma immersion ion injection device of the double even device of air of detachable liner specifically.
Background technology
(Ion Beam Ion Implantation IBII) is widely used in material modification and semiconductor technology in traditional beamline ion implanters injection.It mainly is made up of several sections such as ion source, mass separator, accelerator, scanning equipment, vacuum section and cooling systems.Ion source partly produces plasma body, ion in the plasma body is extracted the ion that obtains single quality single energy through mass separator and accelerator, ion is injected in the substrate under scanning device auxiliary, vacuum tightness when vacuum section provides the system works better, cooling system is used for the cooling of total system.Along with the continuous increase and constantly the dwindling of cmos device characteristic dimension of sizes of substrate in the semiconductor technology makes IBII be faced with formidable challenges, because like charges repels the divergence of ion beam that causes mutually, scan-type is infused in the cost rising that sizes of substrate brings when big etc. when injecting as the low energy shallow junction.(Plasma Immersion Ion Implantation, PIII) technology is considered to substitute the new doping techniques that IBII makes super shallow junction in the plasma immersion ion injection.
PIII directly is immersed in substrate in the plasma body, when chip bench adds the negative pulse bias voltage, at electron plasma frequency ω reciprocal
PeTime scale in, the electronics in the substrate surface annex plasma body is ostracised, the bigger ion of remaining inertia forms ion parent sheath layer.Subsequently, at ion plasma frequency ω
-1 PiTime in ion be accelerated and be injected in the substrate, this causes the border between plasma body and the sheath layer to advance to the plasma body zone, the new ion that exposes is extracted out again, promptly the sheath layer moves along with ionic and expands.In the longer time yardstick, the sheath layer is stable at the Child-Langmuir equation sheath layer (Child-Langmuir equation is satisfied in the motion of plasma body intermediate ion) of stable state.
PIII compares with IBII and has many good qualities: at first PIII does not have the device such as The ion extraction, focusing, scanning of IBII, and equipment is simple, and cost is low; Secondly PIII is that non-scanning type mixes, and can realize that big area injects the injection efficiency height simultaneously; IBII is the line-of-sight process once more, and PIII is the outline-of-sight process, can realize the doping of 3 D complex structure workpiece; Also have PIII dopant ion energy distribution very wide, inject the restriction of energy gear shaper without theoretical, can realize that high dosage, low energy ion mix.
Have some shortcomings during PIII: (1) PIII does not have the mass separation device yet, all ions in the chamber all quicken to be injected in the substrate under the effect of bias voltage, elements such as the iron that chamber inner wall is sputtered out when comprising the immersion ion injection, aluminium, thus the very big Devices Characteristics that influence of meeting caused the injection pollution after it injected substrate; (2) during PIII, the plasma body self that the induction coupling produces not is even completely, the fringing effect of chip bench has aggravated the heterogeneity injected when ion implantation, and it is higher that the implantation dosage at substrate center place is promptly injected in the fringing effect of chip bench, and the implantation dosage of edge is lower.The heterogeneity problem of injecting along with the increase (100mm is to 200mm to 300mm) of sizes of substrate is more obvious.How to realize on large area substrates that the uniform ion injection needs to be resolved hurrily; (3) after repeatedly ion implantation, can on chamber inner wall, form one deck settled layer, as adopt the PH3 geseous discharge to realize to form at chamber inner wall after the P element injects the settling of one deck xanchromatic phosphorus, change when injecting other element and must be earlier the settling of chamber inner wall to be cleaned up, and the cleaning of chamber inner wall has increased the cost of injection when having great difficulty.
Summary of the invention
One of purpose of the present invention provide a kind of when reducing plasma immersion ion and injecting chamber inner wall pollution and improve the inhomogeneity plasma immersion ion injection device that plasma immersion ion injects.
A kind of plasma immersion ion injection device is provided according to an aspect of the present invention, comprise ion implantation chamber, supplying unit, injecting electrode part and vacuum section, wall is provided with liner in the described ion implantation chamber, and described liner is made by the whole block material that comprises the silicon composition.
Described whole block material is made by silicon single crystal, polysilicon, non-crystalline silicon or silicon-dioxide.
Described whole block material is to make at inner-wall spraying silicon single crystal, polysilicon, non-crystalline silicon or the silicon-dioxide of the liner of being made by graphite, stainless steel or aluminum.
Described silicon single crystal, polysilicon, non-crystalline silicon or earth silicon material thickness model are that 10 μ m are to 1000 μ m.
The wall thickness of inner lining is 0.1mm to 20mm in the described ion implantation chamber.
Described liner comprises dismountable top liner, two side liner and bottom liner; Described bottom liner is arranged on described ion implantation cavity bottom, and described sidewall liner is arranged on the liner of described bottom, and described top liner can be arranged on the described sidewall liner.
Evenly offer a plurality of circular holes on described top liner and the bottom liner, described Circularhole diameter be 0.5mm to 5mm, circular hole area dutycycle is 5% to 50%.
By plasma immersion ion injection device provided by the invention, the pollution of chamber inner wall when not only reducing the plasma immersion ion injection; But also make the gas distribution that enters in the reaction chamber more even, and the fringing effect that reduces to inject chip bench, thus the homogeneity that plasma immersion ion injects improved.
Description of drawings
Fig. 1 is the structural representation of traditional IC P PIII system.
Fig. 2 for the embodiment of the invention provide the structural representation of ICP PIII system;
The synoptic diagram of the top liner that Fig. 3 provides for the embodiment of the invention.
The synoptic diagram of the sidewall liner that Fig. 4 provides for the embodiment of the invention.
The synoptic diagram of the bottom liner that Fig. 5 provides for the embodiment of the invention.
The object of the invention, function and advantage will be in conjunction with the embodiments, are described further with reference to accompanying drawing.
Embodiment
As shown in Figure 1, traditional IC P PIII system comprises four most of compositions such as vacuum section, supplying unit, injecting electrode part and cooling system.Wherein, vacuum section is made up of nozzle of air supply 111, air outlet 112, ion implantation chamber 114, the sundstrand pump (comprising mechanical pump and molecular pump) that is connected with air outlet 112.Supplying unit comprises that being used for geseous discharge produces the radio-frequency power supply of plasma body and be used for ion implantation direct current pulse power source 125.Wherein, radio-frequency power supply is made up of radio frequency generation source 122 and radio frequency L type matching box 123 again.Traditional IC P PIII work the time will be waited to inject print 181 earlier and be put on the chip bench 171 of ion implantation chamber 114, after utilize vacuum section, make ICP PIII system vacuum degree reach the required base vacuum of injection experiments rapidly (as 1 * 10
-4Pa or 1 * 10
-85Pa), then feed experimental gas (as PH by inlet mouth 111
3, B
2H
6, AsH
3Deng).Under the effect of radio-frequency power supply, experimental gas is by ICP discharge mode discharge generation high density plasma.Ion in the plasma body quickens to be injected in the substrate 181 under the effect of pulsed bias that injecting electrode adds 125, thereby realizes that ion doping injects, and the gas after the injection is taken away by the sundstrand pump that is combined by mechanical pump, molecular pump by air outlet 112.The effect of radio frequency adaptation 123 be make add radio frequency power and be added to forward power maximum in the plasma body, reflective power minimum (being preferably zero); Cooling when cooling system is used for total system work, as the cooling of molecular pump, the cooling of injecting electrode etc.
As shown in Figure 2, the embodiment of the invention is provided with detachable liner to wall in its ion implantation chamber 114 on traditional IC P PIII system-based.Liner comprises dismountable top liner 230, two side liner 240 (see figure 4)s and bottom liner 250.Earlier bottom liner 250 is put into ion implantation chamber 114 bottom center naturally when above-mentioned liner is installed, on the liner 250, top liner 230 is placed on the lateral lining 240 bottom then sidewall liner 240 being placed on.Wherein, need not any coupling device between the liner, only need last the getting final product of leaning on of nature.When dismantling, whole liner gets final product according to the inverted order dismounting of installing.The cleaning of detachable liner has replaced repeatedly injecting the cleaning of rear chamber's inwall, makes that cleaning is simpler, and cost is lower.
Evenly offer a plurality of circular holes (referring to Fig. 3 and Fig. 5) on top liner 230 and the bottom liner 250.Wherein, the Circularhole diameter in liner hole, top 231 and liner hole, bottom 251 is that 0.5mm is to 5mm, the area duty cycle range ratio of the disk total area (the circular hole total area with) is 5% to 50%, thereby makes that the plasma body of discharge generation is more even, and then improves ion implantation uniformity.The disk interstitial hole is that disk is by cut-out 252.
The foregoing description is a preferred implementation of the present invention; but embodiments of the present invention are not restricted to the described embodiments; other any do not deviate from change, the modification done under spirit of the present invention and the principle, substitutes, combination, simplify; all should be the substitute mode of equivalence, be included within protection scope of the present invention.
Claims (7)
1. a plasma immersion ion injection device comprises ion implantation chamber, supplying unit, injecting electrode part and vacuum section, it is characterized in that:
Wall is provided with liner in the described ion implantation chamber, and described liner is made by the whole block material that comprises the silicon composition.
2. according to the described plasma immersion ion injection device of claim, it is characterized in that:
Described whole block material is made by silicon single crystal, polysilicon, non-crystalline silicon or silicon-dioxide.
3. according to the described plasma immersion ion injection device of claim, it is characterized in that:
Described whole block material is to make at inner-wall spraying silicon single crystal, polysilicon, non-crystalline silicon or the silicon-dioxide of the liner of being made by graphite, stainless steel or aluminum.
4. plasma immersion ion injection device according to claim 3 is characterized in that:
Described silicon single crystal, polysilicon, non-crystalline silicon or earth silicon material thickness model are that 10 μ m are to 1000 μ m.
5. according to each described plasma immersion ion injection device of claim 1 to 4, it is characterized in that:
The wall thickness of inner lining is 0.1mm to 20mm in the described ion implantation chamber.
6. according to each described plasma immersion ion injection device of claim 1 to 4, it is characterized in that:
Described liner comprises dismountable top liner, two side liner and bottom liner; Described bottom liner is arranged on described ion implantation cavity bottom, and described sidewall liner is arranged on the liner of described bottom, and described top liner can be arranged on the described sidewall liner.
7. plasma immersion ion injection device according to claim 6 is characterized in that:
Evenly offer a plurality of circular holes on described top liner and the bottom liner, described Circularhole diameter be 0.5mm to 5mm, circular hole area dutycycle is 5% to 50%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102098241A CN102296276A (en) | 2010-06-25 | 2010-06-25 | Plasma immersion ion implantation device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102098241A CN102296276A (en) | 2010-06-25 | 2010-06-25 | Plasma immersion ion implantation device |
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|---|---|
| CN102296276A true CN102296276A (en) | 2011-12-28 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010102098241A Pending CN102296276A (en) | 2010-06-25 | 2010-06-25 | Plasma immersion ion implantation device |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103866394A (en) * | 2012-12-11 | 2014-06-18 | 中国科学院微电子研究所 | Plasma immersion ion implantation system |
| CN105097460A (en) * | 2014-05-09 | 2015-11-25 | 中芯国际集成电路制造(上海)有限公司 | Method for solving problem of path pollution of ion implanter |
| TWI587348B (en) * | 2012-06-19 | 2017-06-11 | 離子束科技公司 | A machine for implanting ions in plasma immersion mode for a low-pressure method |
| CN112376029A (en) * | 2020-11-11 | 2021-02-19 | 北京北方华创微电子装备有限公司 | Plasma immersion ion implantation apparatus |
| CN113745086A (en) * | 2020-05-29 | 2021-12-03 | 江苏鲁汶仪器有限公司 | Semiconductor device for realizing etching or film coating by using plasma |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6120660A (en) * | 1998-02-11 | 2000-09-19 | Silicon Genesis Corporation | Removable liner design for plasma immersion ion implantation |
| US20010046566A1 (en) * | 2000-03-23 | 2001-11-29 | Chu Paul K. | Apparatus and method for direct current plasma immersion ion implantation |
| US20040107906A1 (en) * | 2000-08-11 | 2004-06-10 | Applied Materials, Inc. | Plasma immersion ion implantation apparatus including a plasma source having low dissociation and low minimum plasma voltage |
| US20060102286A1 (en) * | 2004-11-12 | 2006-05-18 | Kim Do-Hyeong | Plasma processing apparatus |
-
2010
- 2010-06-25 CN CN2010102098241A patent/CN102296276A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6120660A (en) * | 1998-02-11 | 2000-09-19 | Silicon Genesis Corporation | Removable liner design for plasma immersion ion implantation |
| US20010046566A1 (en) * | 2000-03-23 | 2001-11-29 | Chu Paul K. | Apparatus and method for direct current plasma immersion ion implantation |
| US20040107906A1 (en) * | 2000-08-11 | 2004-06-10 | Applied Materials, Inc. | Plasma immersion ion implantation apparatus including a plasma source having low dissociation and low minimum plasma voltage |
| US20060102286A1 (en) * | 2004-11-12 | 2006-05-18 | Kim Do-Hyeong | Plasma processing apparatus |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI587348B (en) * | 2012-06-19 | 2017-06-11 | 離子束科技公司 | A machine for implanting ions in plasma immersion mode for a low-pressure method |
| CN103866394A (en) * | 2012-12-11 | 2014-06-18 | 中国科学院微电子研究所 | Plasma immersion ion implantation system |
| CN103866394B (en) * | 2012-12-11 | 2016-08-17 | 中国科学院微电子研究所 | A kind of plasma immersion ion implantation system |
| CN105097460A (en) * | 2014-05-09 | 2015-11-25 | 中芯国际集成电路制造(上海)有限公司 | Method for solving problem of path pollution of ion implanter |
| CN113745086A (en) * | 2020-05-29 | 2021-12-03 | 江苏鲁汶仪器有限公司 | Semiconductor device for realizing etching or film coating by using plasma |
| CN112376029A (en) * | 2020-11-11 | 2021-02-19 | 北京北方华创微电子装备有限公司 | Plasma immersion ion implantation apparatus |
| CN112376029B (en) * | 2020-11-11 | 2022-10-21 | 北京北方华创微电子装备有限公司 | Plasma immersion ion implantation apparatus |
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Application publication date: 20111228 |