CN102313862A - De-embedding method for on-wafer four-port radio frequency device during radio frequency test - Google Patents

De-embedding method for on-wafer four-port radio frequency device during radio frequency test Download PDF

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Publication number
CN102313862A
CN102313862A CN2010102215739A CN201010221573A CN102313862A CN 102313862 A CN102313862 A CN 102313862A CN 2010102215739 A CN2010102215739 A CN 2010102215739A CN 201010221573 A CN201010221573 A CN 201010221573A CN 102313862 A CN102313862 A CN 102313862A
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port
radio frequency
radio
embedding
y2port
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CN102313862B (en
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周天舒
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Shanghai Huahong Grace Semiconductor Manufacturing Corp
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Shanghai Hua Hong NEC Electronics Co Ltd
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Abstract

The invention discloses a de-embedding method for an on-wafer four-port radio frequency device during radio frequency testing. The method comprises the following steps of: 1, forming a two-port de-embedding structure on a silicon wafer which forms the four-port radio frequency device, namely forming a lead section between a reference surface of the four-port radio frequency device and one test pressure welding block of the two-port de-embedding structure as well as another lead section between the reference surface of the four-port radio frequency device and the other test pressure welding block of the two-port de-embedding structure respectively during layout design, wherein the formed two lead sections have identical structures and are in cascade connection with each other to form the two-port de-embedding structure; and 2, performing the radio frequency testing on the four-port radio frequency device and the two-port de-embedding structure, and acquiring a radio frequency parameter of the four-port radio frequency device by a radio frequency de-embedding algorithm. In the method, the de-embedding structure is only required to be subjected to two-port radio frequency testing, so that the whole de-embedding process can become more convenient and efficient.

Description

Sheet mo(u)ld top half four port radio-frequency devices radio frequency testings go the embedding method
Technical field
The present invention relates to SIC (semiconductor integrated circuit) and make the field, what particularly relate to a kind of mo(u)ld top half four port radio-frequency devices radio frequency testings goes the embedding method.
Background technology
The radio frequency testing structure of sheet mo(u)ld top half radio-frequency devices often comprises two parts: radio-frequency devices with go embedding (de-embedding) structure.Said radio-frequency devices is a device under test, comprises such as sheet mo(u)ld top half transformer four port semiconductor radio-frequency devices such as (on-wafer transformer); The said embedding structure of going is the structure that the placement for rf probe designs; And said radio-frequency devices is the sheet mo(u)ld top half structure that is formed on the same silicon chip with going the embedding structure.The radio frequency parameter of said radio-frequency devices is that the general construction that records is that the radio frequency parameter of said radio frequency testing structure deducts the said radio frequency parameter that goes the embedding structure, promptly in order to realize the radio frequency testing of said radio-frequency devices, needs to adopt the embedding method of going.The embedding method of going of existing sheet mo(u)ld top half radio-frequency devices radio frequency testing is in layout design, design " open circuit " or " leading directly to " etc. especially and go the embedding structure and go the embedding computing accordingly, thereby the embedding effect on structure is gone in eliminating.
As shown in Figure 1; For " open circuit " that go the embedding method that has sheet mo(u)ld top half four port radio-frequency devices radio frequency testings now removes the embedding structural representation; It is that one or four ports go the embedding structure that said open circuit goes the embedding structure, and the zone shown in four markers is that said open circuit goes four ports of embedding structure also to be four test press welding blocks among Fig. 1.Between the reference surface of each said test press welding block and four port radio-frequency devices, all be designed with a lead-in wire, as can beappreciated from fig. 1, each lead-in wire of testing press welding block does not connect, and is open-circuit structure.
As shown in Figure 2; For existing sheet mo(u)ld top half four port radio-frequency devices radio frequency testings " the leading directly to " of going the embedding method removed the embedding structural representation; Said straight-through to go the embedding structure be that one or four ports go the embedding structure, and the zone shown in four markers is that said straight-through four ports of embedding structure that go also are four test press welding blocks among Fig. 2.Between the reference surface of each said test press welding block and four port radio-frequency devices, all be designed with a lead-in wire, as can beappreciated from fig. 2, the lead-in wire of two pairs of test press welding blocks all connects respectively up and down, is bypass structure.
By on can know that adopts existing existing sheet mo(u)ld top half four port radio-frequency devices radio frequency testings goes the embedding method, need use said open circuit simultaneously and go the embedding structure and saidly straight-throughly go the embedding structure, will make the embedding structure can take many chip areas like this.
Summary of the invention
What technical matters to be solved by this invention provided a kind of mo(u)ld top half four port radio-frequency devices radio frequency testings goes the embedding method, can reduce the chip area that goes the embedding structure to take, and can also improve the efficient of four port radio frequency testings.
For solving the problems of the technologies described above, provided by the invention mo(u)ld top half four port radio-frequency devices radio frequency testings go the embedding method, comprise the steps:
A kind of mo(u)ld top half four port radio-frequency devices radio frequency testings go the embedding method, it is characterized in that, comprise the steps:
Step 1, form two-port on the silicon chip of four port radio-frequency devices and go the embedding structure forming; The formation method is: when layout design; Between two test press welding blocks that the reference surface and the said two-port of said four port radio-frequency devices are gone the embedding structure, respectively form one section lead-in wire; The said two sections pin configurations that form are identical; Said two sections lead-in wires are carried out cascade, form said two-port and go the embedding structure;
Step 2, go the embedding structure to carry out radio frequency testing to said four port radio-frequency devices and said two-port respectively; Obtain the radio frequency testing value of said four port radio-frequency devices and the radio frequency testing value that said two-port is gone the embedding structure, utilize radio frequency to go embedding algorithm and above-mentioned two radio frequency testing values to obtain the radio frequency parameter of said four port radio-frequency devices again.Said radio frequency goes the embedding algorithm to do, utilizes following formula to calculate:
YDUT=[(Y4PORT-YP*I) -1-ZP*I] -1
Wherein: YP=[Y2PORT 11+ Y2PORT 12+ Y2PORT 21+ Y2PORT 22]/4
ZP=-[Y2PORT 12+Y2PORT 21] -1
Y4PORT is the radio frequency testing value of said four port radio-frequency devices in the above-mentioned formula, is one 4 * 4 matrixes; Said Y2PORT is the radio frequency testing value that said two-port is gone the embedding structure, is one 2 * 2 matrixes, Y2PORT 11, Y2PORT 12, Y2PORT 21, Y2PORT 22Be respectively each element value of Y2PORT matrix; Said I is 4 * 4 cell matrixs; Said YDUT is the radio frequency parameter of said four port radio-frequency devices.
The present invention can obviously save chip area, the saving corresponding techniques cost of development of embedding structure.Simultaneously, because the embedding structure of going of the present invention only needs the two-port radio frequency testing, make the whole embedding process of going become more convenient and efficient.
Description of drawings
Below in conjunction with accompanying drawing and embodiment the present invention is done further detailed explanation:
Fig. 1 is that the open circuit that goes the embedding method of existing sheet mo(u)ld top half four port radio-frequency devices radio frequency testings removes the embedding structural representation;
Fig. 2 is the straight-through embedding structural representation that goes that goes the embedding method of existing sheet mo(u)ld top half four port radio-frequency devices radio frequency testings;
Fig. 3 is the process flow diagram of embodiment of the invention method;
Fig. 4 is that the two-port of the embodiment of the invention is removed the embedding structural representation;
Fig. 5 is that two-port as shown in Figure 4 goes that the embedding structure is abstract to be the synoptic diagram of two-port network.
Embodiment
As shown in Figure 3, be the process flow diagram of embodiment of the invention method.The embedding method of going of embodiment of the invention sheet mo(u)ld top half four port radio-frequency devices radio frequency testings comprises the steps:
Step 1, form two-port on the silicon chip of four port radio-frequency devices and go the embedding structure forming; As shown in Figure 4; Forming two-port goes the embedding structural approach to be: when layout design; Removing two test press welding blocks of embedding structure in the reference surface (not shown among Fig. 4) of said four port radio-frequency devices and said two-port is that respectively to form one section lead-in wire among Fig. 4 shown in the signal between the zone be two L type region units that are connected with the signal area piece respectively among Fig. 4; The said two sections lead-in wires that form are that two L type region unit structures shown in Figure 4 are identical; Said two sections lead-in wires are carried out cascade be about to two L type region units shown in Figure 4 and be connected, form said two-port and go the embedding structure.Because it is symmetrical on domain structure that two-port as shown in Figure 4 is gone the embedding structure, thus theoretical according to high frequency network, can be considered typical two-port network.As shown in Figure 5, be that two-port as shown in Figure 4 goes that the embedding structure is abstract to be the synoptic diagram of two-port network.On behalf of a said two-port, Fig. 5 middle port 1, port 2 remove the test press welding block of embedding structure respectively is zone shown in the signal among Fig. 4, and the below among Fig. 5 all is the ground port for two contacts that indicate.
Wherein, A, B; The admittance value of C branch road promptly is respectively YA, YB, YC and all can is derived and got by the Y parameter of two-port network, and wherein Y parameter is the radio frequency parameter of two-port network, is one 2 * 2 matrixes; Comprise Y11, Y12, Y21, four matrix elements of Y22, above-mentioned derivation formula is:
Y A=(Y 11+Y 12)/2 …………………………………(1)
Y B=-(Y 21+Y 12)/2 ……………………………………(2)
Y C=(Y 22+Y 21)/2 ……………………………………(3)。
Step 2, go the embedding structure to carry out radio frequency testing to said four port radio-frequency devices and said two-port respectively; Obtain the radio frequency testing value of said four port radio-frequency devices and the radio frequency testing value that said two-port is gone the embedding structure, utilize radio frequency to go embedding algorithm and above-mentioned two radio frequency testing values to obtain the radio frequency parameter of said four port radio-frequency devices again.Said radio frequency goes the embedding algorithm to do, utilizes following formula to calculate:
YDUT=[(Y4PORT-YP*I) -1-ZP*I] -1
Wherein: YP=[Y2PORT 11+ Y2PORT 12+ Y2PORT 21+ Y2PORT 22]/4
ZP=-[Y2PORT 12+Y2PORT 21] -1
Y4PORT is the radio frequency testing value of said four port radio-frequency devices in the above-mentioned formula, is one 4 * 4 matrixes; Said Y2PORT is the radio frequency testing value that said two-port is gone the embedding structure, is one 2 * 2 matrixes, Y2PORT 11, Y2PORT 12, Y2PORT 21, Y2PORT 22Be respectively each element value of Y2PORT matrix; Said I is 4 * 4 cell matrixs; Said YDUT is the radio frequency parameter of said four port radio-frequency devices.
More than through specific embodiment the present invention has been carried out detailed explanation, but these are not to be construed as limiting the invention.Under the situation that does not break away from the principle of the invention, those skilled in the art also can make many distortion and improvement, and these also should be regarded as protection scope of the present invention.

Claims (2)

  1. Sheet mo(u)ld top half four port radio-frequency devices radio frequency testings go the embedding method, it is characterized in that, comprise the steps:
    Step 1, form two-port on the silicon chip of four port radio-frequency devices and go the embedding structure forming; The formation method is: when layout design; Between two test press welding blocks that the reference surface and the said two-port of said four port radio-frequency devices are gone the embedding structure, respectively form one section lead-in wire; The said two sections pin configurations that form are identical; Said two sections lead-in wires are carried out cascade, form said two-port and go the embedding structure;
    Step 2, go the embedding structure to carry out radio frequency testing to said four port radio-frequency devices and said two-port respectively; Obtain the radio frequency testing value of said four port radio-frequency devices and the radio frequency testing value that said two-port is gone the embedding structure, utilize radio frequency to go embedding algorithm and above-mentioned two radio frequency testing values to obtain the radio frequency parameter of said four port radio-frequency devices again.
  2. Sheet mo(u)ld top half four port radio-frequency devices radio frequency testings go the embedding method, it is characterized in that: said radio frequency goes the embedding algorithm to do, utilizes following formula to calculate:
    YDUT=[(Y4PORT-YP*I) -1-ZP*I] -1
    Wherein: YP=[Y2PORT 11+ Y2PORT 12+ Y2PORT 21+ Y2PORT 22]/4
    ZP=-[Y2PORT 12+Y2PORT 21] -1
    Y4PORT is the radio frequency testing value of said four port radio-frequency devices in the above-mentioned formula, is one 4 * 4 matrixes; Said Y2PORT is the radio frequency testing value that said two-port is gone the embedding structure, is one 2 * 2 matrixes, Y2PORT 11, Y2PORT 12, Y2PORT 21, Y2PORT 22Be respectively each element value of Y2PORT matrix; Said I is 4 * 4 cell matrixs; Said YDUT is the radio frequency parameter of said four port radio-frequency devices.
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Cited By (4)

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Publication number Priority date Publication date Assignee Title
CN105891628A (en) * 2016-03-30 2016-08-24 清华大学 Universal four-port on-wafer high-frequency de-embedding method
CN107076822A (en) * 2014-10-28 2017-08-18 上海集成电路研发中心有限公司 The test structure and method of radio-frequency devices De- embedding precision are judged using introduction means
CN107247225A (en) * 2017-06-12 2017-10-13 上海华岭集成电路技术股份有限公司 A kind of calibration method tested based on ATE radio frequencies CP
CN109977522A (en) * 2019-03-20 2019-07-05 上海集成电路研发中心有限公司 A kind of scalable formation for removing embedding model and go embedding method

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107076822A (en) * 2014-10-28 2017-08-18 上海集成电路研发中心有限公司 The test structure and method of radio-frequency devices De- embedding precision are judged using introduction means
CN107076822B (en) * 2014-10-28 2020-01-10 上海集成电路研发中心有限公司 Test structure and method for judging de-embedding precision of radio frequency device by using lead-in device
CN105891628A (en) * 2016-03-30 2016-08-24 清华大学 Universal four-port on-wafer high-frequency de-embedding method
CN105891628B (en) * 2016-03-30 2018-05-29 清华大学 General four port is in piece high frequency De- embedding method
CN107247225A (en) * 2017-06-12 2017-10-13 上海华岭集成电路技术股份有限公司 A kind of calibration method tested based on ATE radio frequencies CP
CN109977522A (en) * 2019-03-20 2019-07-05 上海集成电路研发中心有限公司 A kind of scalable formation for removing embedding model and go embedding method

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