CN102435773A - Differential micro capacitor for single-shaft precision accelerometer and preparation method thereof - Google Patents
Differential micro capacitor for single-shaft precision accelerometer and preparation method thereof Download PDFInfo
- Publication number
- CN102435773A CN102435773A CN2011102981588A CN201110298158A CN102435773A CN 102435773 A CN102435773 A CN 102435773A CN 2011102981588 A CN2011102981588 A CN 2011102981588A CN 201110298158 A CN201110298158 A CN 201110298158A CN 102435773 A CN102435773 A CN 102435773A
- Authority
- CN
- China
- Prior art keywords
- electrode
- movable electrode
- electric capacity
- difference
- little electric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
The invention discloses a differential micro capacitor for a single-shaft precision accelerometer and a preparation method thereof. The micro capacitor comprises an upper electrode, a movable electrode and a lower electrode, wherein the upper electrode and the movable electrode are kept hung in the air with the lower electrode by a post; the upper and lower electrodes are both protected by equipotential rings; the movable electrode is hung in the air by the post and takes a spring as a flexible support; the upper and lower electrodes and the movable electrode are all round electrodes, and each electrode has a signal lead connected into a signal circuit; and the movable electrode and the upper and lower electrodes form two differential capacitors respectively. The differential micro capacitor is realized by employing technologies such as photo-etching, sputtering, electroplating, corroding, and the like in an MEMS (Micro Electro Mechanical System) process. In the invention, the upper electrode, the lower electrode and the movable electrode form the differential capacitors; the value of a capacitor is increased while the value of the other capacitor is decreased in a working process; and the output value directly reflects the detection quantity through the signal processing, so that the aim of detecting the accelerated speed is fulfilled.
Description
Technical field
the present invention relates to the accurate accelerometer of single shaft, specifically, relate to a kind of little electric capacity of high sensitivity difference and preparation method who is used for the accurate acceleration transducer of single shaft.
Background technology
That
capacitance acceleration transducer has is simple in structure, highly sensitive, dynamic response characteristic is good, anti-overload ability is big; Therefore series of advantages such as, low price strong to mal-condition adaptability such as high temperature, radiation and judders are considered to a kind of rising sensor.
in decades, people are many to come measuring vibrations and impact with piezoelectric acceleration transducer or piezoresistance type acceleration sensor.But for the ballistic motion of measuring longer duration, it is extremely important that used sensor has the zero-frequency response.Piezoelectric acceleration sensor is firm; But frequency response can not arrive zero; Though and piezoresistance type acceleration sensor can be surveyed responsive stable state acceleration; But cross stroke and cause damage easily with resonance, needed precision when it does not have firm degree that some application scenario requires and low g value measurement, and to responsive to temperature.
become capacitance acceleration transducer and have just in time remedied above-mentioned defective, and this acceleration transducer can bear bigger overshoot and because it has avoided the pressure drag temperature effect, so temperature characterisitic is relatively good.Utilizing capacitance acceleration transducer that modern new technology is processed, that hold principle work according to power transformation is the vibration that is exclusively used in the low g value of measuring stable state or low frequency, but can tolerate the impact of high g value and do not damage.
Proposed based on the silicon base differential capacitance type acceleration sensor in
Chinese patents (patent No. 200610118484.5); The present invention is based on the sensitivity error that the electric capacity edge effect brings; Designed a kind of little electric capacity of difference that contains equal potential belt; Increase sensitivity greatly, and the present invention is based on non-silicon (glass) substrate, reduced cost greatly.
Summary of the invention
the object of the present invention is to provide a kind of little electric capacity of difference that is used for the accurate accelerometer of single shaft; When not increasing the complex process degree; Produce highly sensitive little variable capacitance, the little variable capacitance among the present invention is used for various occasions as acceleration transducer.
For realizing above-mentioned purpose, the present invention adopts following technical scheme:
the invention provides a kind of little electric capacity of difference that is used for the accurate accelerometer of single shaft; In order to improve sensitivity; Reduce nonlinearity erron; The present invention adopts differential capacitance, like this because symmetry can reduce the measuring error that electrostatic force causes, and the error that environmental factors such as the effective compensates of while ability cause.Simultaneously because sensitivity error and nonlinearity erron that the edge effect of electric capacity brings, the present invention adopts equal potential belt protection to come to reduce greatly the edge effect of electric capacity.
little electric capacity of difference that is used for the accurate accelerometer of single shaft according to the invention comprises top electrode, bottom electrode and movable electrode, and top electrode and movable electrode come unsettled through pillar, and upper/lower electrode all adopts the equal potential belt protection.Movable electrode is unsettled and adopt spring to reach the purpose of movability as flexible support through pillar.Upper/lower electrode and movable electrode all adopt circular electrode, and each electrode all has signal to draw to be linked in the signal circuit.Movable electrode and upper/lower electrode are formed two differential capacitances respectively, and a capacitance increases in the time of detection, and another capacitance reduces, and recruitment equals decrease.The signal of each electric capacity all is input in the anti-phase summing circuit, and output valve has reflected changes in capacitance, has reflected tested accekeration indirectly.
In
technique scheme; The whole little electric capacity of difference that contains equal potential belt is processed on glass substrate; Bottom electrode contacts with glass substrate; Movable electrode is through pillar and spring and the minimum spacing of top electrode maintenance, and top electrode supports with movable electrode through pillar and crossbeam and keeps minimum spacing.
In
technique scheme, in order to guarantee the sensitivity of movable electrode, movable electrode adopts spring to support, and need on movable electrode, set up a mass.
In
technique scheme, in order to guarantee the degree of accuracy of acceleration transducer, it is static relatively that top electrode and bottom electrode will keep under the impact in the external world.Therefore top electrode adopts thicker and narrower crossbeam to support.Equal potential belt also adopts crossbeam to support, and does not adopt spring.
In
technique scheme; Except each electrode all will be drawn the signal; The equal potential belt of upper/lower electrode also will be drawn signal and guaranteed that electrode and equal potential belt have same current potential after applying same voltage, thereby reduces edge effect greatly.
In
technique scheme, in order to guarantee mutually insulated between top electrode, movable electrode, the bottom electrode, adopt substrate of glass, and the silicon that does not adopt conductive capability is as substrate.
The present invention provides a kind of preparation method who is used for the little electric capacity of difference of the accurate accelerometer of single shaft, comprises that step is following:
1) glass cleaning substrate;
2) the one side sputter ground floor Cr/Cu Seed Layer on glass substrate;
3) on ground floor Cr/Cu Seed Layer, get rid of positive photoresist as the ground floor photoresist;
4) make public after the drying glue, figure transfer of the figure of the bottom electrode that will contain equal potential belt through making public and all support pillars are to photoresist;
5) development displays the figure on the photoresist;
6) electroplate, after rinsing well through plasma water, gold-plated;
7) on the glass substrate of having electroplated bottom electrode and pillar, positive-glue removing;
8) after the drying glue, exposure, development obtain the figure of all pillars, electroplate out the figure of pillar;
9) sputter second layer Cr/Cu Seed Layer, after the good Seed Layer of sputter, positive-glue removing again, this is the 3rd layer photoetching glue;
10) drying glue, exposure imaging obtain the figure of movable electrode and spring, and nickel plating then is gold-plated again;
11) electroplate the baking of good back and pass through, positive-glue removing again, this is the 4th layer photoetching glue, makes public, develops, electroplates and obtain adding thick electrode;
12) electroplate the baking of good back and pass through, positive-glue removing again, this is the layer 5 photoresist, makes public, develops, electroplates the figure that obtains remaining pillar again;
13) the 3rd layer of Cr/Cu Seed Layer of sputter, after the good Seed Layer of sputter, positive-glue removing again, this is the layer 6 photoresist;
14) drying glue, exposure imaging obtain the figure of top electrode and crossbeam, and nickel plating then is gold-plated again;
15) discharge capacitance structure.
In
technique scheme, technology such as the photoetching in the MEMS technology of described little electric capacity employing standard, sputter, plating, corrosion realize.The unsettled employing sacrificial layer technology of movable electrode and top electrode is realized.
In
technique scheme; In order to guarantee to erode sacrifice layer at last; Top electrode and movable electrode have designed the etched hole of some, so that the corrosion fluid power makes movable electrode and top electrode unsettled through etched hole and sacrifice layer generation chemical reaction.
In
technique scheme, all electrodes and supporting construction all adopt the plating in the MEMS technology to form, and main material is a nickel, and electrode surface is electroplated the very thin gold of one deck, and gold and nickel have adhesion preferably, and gold is convenient to welding.
the present invention has designed a kind of little electric capacity of difference that is used for the accurate accelerometer of single shaft as acceleration transducer according to MEMS technology, based on becoming the condenser type principle.During acceleration in there is sensing range in the external world, inertial force acts on three electrodes of electric capacity, because upper/lower electrode adopts rigid support; Keep static relatively, and movable electrode is owing to adopting flexible support, under the inertial force effect; Can move small distance, cause capacitance increase in two electric capacity, a capacitance reduces; Signal is input in the signal circuit, the size of output valve reflection acceleration.
The little electric capacity of difference that is used for the accurate accelerometer of single shaft that
the present invention is above-mentioned, the design of equal potential belt and difference structure has reduced nonlinearity erron greatly, has increased sensitivity.The micro-acceleration gauge of relative other principles, sensitivity is higher, and resolving power is higher, good reproducibility, nonlinearity erron is little.Adapt to rugged environment, and be easy to encapsulation, cost is low.
Description of drawings
Fig. 1 is a kind of little electric capacity general structure of difference synoptic diagram that is used for the accurate accelerometer of single shaft;
Fig. 2 is the structural representation of movable electrode and bottom electrode under a kind of little electric capacity of difference that is used for the accurate accelerometer of single shaft;
Fig. 3 is a kind of little capacitor lower electrode structure of difference vertical view that is used for the accurate accelerometer of single shaft.
Among
figure: 1 top electrode equal potential belt, 2 top electrodes, 3 crossbeams, 4 pads, 5 etched holes, 6 top electrode support columns, 7 add thick electrode (mass), 8 movable electrodes, 9 springs, 10 movable electrode support columns, 11 bottom electrode equal potential belts, 12 bottom electrodes, 13, substrate of glass.
Embodiment
elaborate to embodiments of the invention below in conjunction with accompanying drawing: present embodiment is a prerequisite with technical scheme of the present invention; Provided detailed embodiment and concrete operating process, but protection scope of the present invention is not limited to following embodiment.
Embodiment 1
are shown in Fig. 1-3; Present embodiment provides a kind of little electric capacity of difference that is used for the accurate accelerometer of single shaft to comprise top electrode, bottom electrode 12 and movable electrode 8; Top electrode and movable electrode 8 are unsettled through top electrode support column 6, movable electrode support column 10, and top electrode, bottom electrode 12 all adopt equal potential belt 1,11 protections.Movable electrode 8 is unsettled and adopt spring 9 to reach the purpose of movability as flexible support through movable electrode support column 10.Upper/lower electrode and movable electrode 8 all adopt circular electrode, and each electrode is all drawn pad 4,, signal drawn be linked in the signal circuit.Movable electrode 8 is formed two differential capacitances respectively with upper/lower electrode, and a capacitance increases in the time of detection, and another capacitance reduces, and recruitment equals decrease.The signal of each electric capacity all is input in the anti-phase summing circuit, and output valve has reflected changes in capacitance, has reflected tested accekeration indirectly.
In
present embodiment; Said little electric capacity is arranged on the glass substrate 13; Bottom electrode 12 contacts with substrate of glass 13, and movable electrode 8 keeps minimum spacing through movable electrode support column 10 and spring 9 and bottom electrode 12, and this spacing is less than or equal to 5 μ m; Top electrode keeps minimum spacing through top electrode support column 6 and crossbeam 3 and movable electrode 8, changes the spacing size and equals the distance between movable electrode 8 and the bottom electrode 12.
In
present embodiment, upper/lower electrode and movable electrode 8 all adopt circular electrode, and top electrode and bottom electrode 12 adopt the equal potential belt design, and equal potential belt is an annulus, surrounds circular electrode, and keeps insulation with circular electrode.The width of annulus is greater than the equal potential belt of twice and the clearance for insulation between the electrode.
In
present embodiment, in order to guarantee the sensitivity of movable electrode, movable electrode adopts spring to support, and need on movable electrode, set up a mass 7.
In
present embodiment, in order to guarantee the degree of accuracy of acceleration transducer, it is static relatively that top electrode and bottom electrode will keep under the impact in the external world.Therefore the crossbeam 3 of top electrode employing supports, and crossbeam thickness is generally at 30 μ m ~ 50 μ m, and width is approximately 0.5 ~ 1 with the ratio of thickness, guarantees that like this crossbeam has bigger rigidity at vertical direction.Equal potential belt also adopts crossbeam 3 to support, and does not adopt spring.
In
present embodiment; In order to guarantee to erode sacrifice layer at last; Top electrode and movable electrode have designed the etched hole 5 of some, so that the corrosion fluid power through etched hole and sacrifice layer generation chemical reaction, makes movable electrode 8 and top electrode unsettled.
In
present embodiment; Except each electrode all will be drawn the signal; The equal potential belt 1,11 of upper/lower electrode also will be drawn signal and guaranteed that electrode and equal potential belt have same current potential after applying same voltage, thereby reduces edge effect greatly.
In
technique scheme, in order to guarantee mutually insulated between top electrode, movable electrode, the bottom electrode, adopt substrate of glass 13, and the silicon that does not adopt conductive capability is as substrate.
Present embodiment provides a kind of preparation method who is used for the little electric capacity of difference of the accurate accelerometer of single shaft, and its step is following:
1) cleans the thick glass substrate of 1mm
Glass substrate is cleaned with calcium carbonate powder earlier in
, behind the wash clean, uses alkaline cleaning fluid and acid alkalies glass cleaning substrate respectively, and plasma water is rinsed well then, places 60 ℃ of baking ovens 1 hour.
) one side sputter ground floor Cr/Cu Seed Layer on glass substrate.
) on ground floor Cr/Cu Seed Layer, get rid of 5 μ m positive photoresist AZ P4620 as the ground floor photoresist.
) adopt after the drying glue Karl Suss MA6 double-sided alignment litho machine to make public.Through exposure with the figure of bottom electrode (containing equal potential belt) and all figure transfer that support pillars to photoresist.
) developing displays the figure on the photoresist.
) electroplate.When treating that thickness of coating is 4 μ m, after the process plasma water is rinsed well, place gold plating liquid to electroplate the gold of 1 μ m thickness, so that welding.
) adopt the whirl coating method in the step 4, on the glass substrate of having electroplated bottom electrode and pillar, get rid of the positive glue of 5 μ m.Whirl coating technology basic parameter is consistent.
) adopt the method in the above-mentioned steps after the drying glue, exposure, developing obtains the figure of all pillars, electroplates out the figure of pillar.
) adopt the method sputter second layer Cr/Cu Seed Layer in the step 2.Technological parameter is the same.After the good Seed Layer of sputter, get rid of the positive glue AZP4903 of 10 μ m again, technological parameter is 1000 rpm * 30s.This is the 3rd layer photoetching glue.
) drying glue, exposure imaging obtains the figure of movable electrode and spring, and is the same with said method, and development time is long slightly.Plating 9 μ m nickel in same electroplating bath are plating 1 μ m gold then.
) electroplate the baking of good back and pass through, get rid of the positive glue of 30 μ m again, the same with above-mentioned whirl coating parameter, this is the 4th layer photoetching glue, makes public, develops, electroplates and obtain adding thick electrode, purpose is in order to increase the quality of movable electrode.
) electroplate the baking of good back thoroughly, get rid of the positive glue of 5 μ m again, the same with above-mentioned whirl coating parameter, this is the layer 5 photoresist, makes public, develops, electroplates the figure that obtains remaining pillar again.
) adopt the 3rd layer of Cr/Cu Seed Layer of method sputter in the step 2.Technological parameter is the same.After the good Seed Layer of sputter, get rid of the positive glue AZP4903 of 10 μ m again, technological parameter is 1000 rpm * 30s.This is the layer 6 photoresist.
) drying glue, exposure imaging obtains the figure of top electrode and crossbeam, and is the same with said method, and development time is long slightly.Plating 9 μ m nickel in same electroplating bath are plating 1 μ m gold then.
) discharge capacitance structure:
mainly adopt the method for wet etching to remove photoresist and Seed Layer, discharge hanging structure.Method is to discharge liquid at photoresist to discharge corrosion back and forth in the liquid with Seed Layer, when the photoresist of all exposures after corrosion finishes with Seed Layer, and releasing sacrificial layer at last, just hiding photoresist in the hanging structure.
The method that
discharge photoresist is to clamp slice, thin piece to place acetone soln, drags repeatedly about ten times up and down, and whether the top one deck photoresist that detects by an unaided eye removes, and Seed Layer will be come out.The method that discharges Seed Layer is to adopt oxydol-ammoniacal liquor etching liquid to come the selective etch liquid of etching copper, keeps nickel and gold dollar element in the time of its ability etching copper.Generally according to oxydol: ammoniacal liquor: water=1:3:12 proportional arrangement, oxydol adds at last, and use the back that stirs.The speed of etching copper is very fast, accomplishes in general a few minutes.Use acid permanganate soln etching Cr then.Releasing sacrificial layer; Slice, thin piece is placed the sodium hydroxide solution that has configured,, make alkaline etch bath enter into sacrifice layer through the etched hole of top electrode through magnetic agitation; Because the photoresist between the upper/lower electrode need be through the etching liquid etched hole entering of the utmost point from power on; So corrosion rate is extremely slow, need reaction for a long time, probably need 10 hours reaction time fully to remove.Be soaked at last in the acetone soln 20 minutes, and took out the back air dry.
In
present embodiment, technology such as the photoetching in the MEMS technology of the little electric capacity employing of difference standard, sputter, plating, corrosion realize.The unsettled employing sacrificial layer technology of top electrode and movable electrode is realized.
In
present embodiment, said top electrode, movable electrode, bottom electrode, pillar, spring, crossbeam, equal potential belt all adopt plating mode to form.Main plated material is a nickel, draws signal for the ease of welding, at the very thin gold of electrode surface plating one deck, the about 1 μ m of thickness.
will be appreciated that above-mentioned description should not be considered to limitation of the present invention although content of the present invention has been done detailed introduction through above-mentioned preferred embodiment.After those skilled in the art have read foregoing, for multiple modification of the present invention with to substitute all will be conspicuous.Therefore, protection scope of the present invention should be limited appended claim.
Claims (10)
1. the little electric capacity of difference that is used for the accurate accelerometer of single shaft comprises top electrode, movable electrode, bottom electrode, and top electrode and movable electrode keep unsettled through pillar and bottom electrode; It is characterized in that: upper/lower electrode all adopts the equal potential belt protection; Movable electrode is unsettled and adopt spring as flexible support through pillar, and upper/lower electrode and movable electrode all adopt circular electrode, and each electrode all has signal to draw to be linked in the signal circuit; Movable electrode and upper/lower electrode are formed two differential capacitances respectively; A capacitance increases when detecting, and another capacitance reduces, and recruitment equals decrease.
2. the little electric capacity of difference that is used for the accurate accelerometer of single shaft according to claim 1; It is characterized in that said little electric capacity is arranged on the glass substrate, bottom electrode contacts with substrate of glass; Movable electrode is through pillar and spring and the minimum spacing of bottom electrode maintenance; Spacing is less than or equal to 5 μ m, and top electrode is through pillar and crossbeam and the minimum spacing of movable electrode maintenance, and the spacing size equals the distance between movable electrode and the bottom electrode.
3. the little electric capacity of difference that is used for the accurate accelerometer of single shaft according to claim 1 and 2 is characterized in that said movable electrode is provided with a mass.
4. the little electric capacity of difference that is used for the accurate accelerometer of single shaft according to claim 1 and 2 is characterized in that, said top electrode adopts crossbeam to support, and equal potential belt also adopts crossbeam to support.
5. the little electric capacity of difference that is used for the accurate accelerometer of single shaft according to claim 1 and 2; It is characterized in that; The equal potential belt of said top electrode and bottom electrode is an annulus; Surround circular electrode, and keep insulation with circular electrode, the width of annulus is greater than the equal potential belt of twice and the clearance for insulation between the electrode.
6. the little electric capacity of difference that is used for the accurate accelerometer of single shaft according to claim 1 and 2 is characterized in that, the equal potential belt of said upper/lower electrode is drawn signal and guaranteed that electrode and equal potential belt have same current potential after applying same voltage.
7. the little electric capacity of difference that is used for the accurate accelerometer of single shaft according to claim 1 and 2 is characterized in that, said electrode surface plating one deck gold.
8. one kind like the described preparation method who is used for the little electric capacity of difference of the accurate accelerometer of single shaft of claim 1 to 6, it is characterized in that, comprises the steps:
1) glass cleaning substrate;
2) the one side sputter ground floor Cr/Cu Seed Layer on glass substrate;
3) on ground floor Cr/Cu Seed Layer, get rid of positive photoresist as the ground floor photoresist;
4) make public after the drying glue, figure transfer of the figure of the bottom electrode that will contain equal potential belt through making public and all support pillars are to photoresist;
5) development displays the figure on the photoresist;
6) electroplate, after rinsing well through plasma water, gold-plated;
7) on the glass substrate of having electroplated bottom electrode and pillar, positive-glue removing;
8) after the drying glue, exposure, development obtain the figure of all pillars, electroplate out the figure of pillar;
9) sputter second layer Cr/Cu Seed Layer, after the good Seed Layer of sputter, positive-glue removing again, this is the 3rd layer photoetching glue;
10) drying glue, exposure imaging obtain the figure of movable electrode and spring, and nickel plating then is gold-plated again;
11) electroplate the baking of good back and pass through, positive-glue removing again, this is the 4th layer photoetching glue, makes public, develops, electroplates and obtain adding thick electrode;
12) electroplate the baking of good back and pass through, positive-glue removing again, this is the layer 5 photoresist, makes public, develops, electroplates the figure that obtains remaining pillar again;
13) the 3rd layer of Cr/Cu Seed Layer of sputter, after the good Seed Layer of sputter, positive-glue removing again, this is the layer 6 photoresist;
14) drying glue, exposure imaging obtain the figure of top electrode and crossbeam, and nickel plating then is gold-plated again;
15) discharge capacitance structure.
9. the preparation method who is used for the little electric capacity of difference of the accurate accelerometer of single shaft according to claim 7 is characterized in that, said electrode surface plating one deck gold, and thickness is 1 μ m.
10. the preparation method who is used for the little electric capacity of difference of the accurate accelerometer of single shaft according to claim 7; It is characterized in that; Said top electrode and movable electrode are provided with the etched hole of some; Be convenient to corrode fluid power and enter into the concurrent biochemical reaction of sacrifice layer, etched hole shape, quantity and the position distribution of top electrode all will be consistent with movable electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110298158.8A CN102435773B (en) | 2011-09-28 | 2011-09-28 | Differential micro capacitor for single-shaft precision accelerometer and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110298158.8A CN102435773B (en) | 2011-09-28 | 2011-09-28 | Differential micro capacitor for single-shaft precision accelerometer and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102435773A true CN102435773A (en) | 2012-05-02 |
| CN102435773B CN102435773B (en) | 2014-07-02 |
Family
ID=45983934
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110298158.8A Expired - Fee Related CN102435773B (en) | 2011-09-28 | 2011-09-28 | Differential micro capacitor for single-shaft precision accelerometer and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102435773B (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103424567A (en) * | 2013-09-02 | 2013-12-04 | 东南大学 | Capacitive micro-machine wind speed and direction sensor |
| CN103439527A (en) * | 2013-09-02 | 2013-12-11 | 东南大学 | Capacitance type minitype machine wind speed wind direction sensor |
| CN106153087A (en) * | 2015-05-15 | 2016-11-23 | 因文森斯公司 | Shift suppression electrode |
| CN106771361A (en) * | 2016-12-15 | 2017-05-31 | 西安邮电大学 | Double-capacitor micro-mechanical acceleration transducer and the temperature self-compensation system based on it |
| CN111164401A (en) * | 2017-07-26 | 2020-05-15 | 罗伯特·博世有限公司 | Micromechanical device and method for producing a micromechanical device |
| CN112472073A (en) * | 2020-11-23 | 2021-03-12 | 四川大学华西医院 | Intelligent waistband |
| US11231441B2 (en) | 2015-05-15 | 2022-01-25 | Invensense, Inc. | MEMS structure for offset minimization of out-of-plane sensing accelerometers |
| CN114839398A (en) * | 2022-04-27 | 2022-08-02 | 东南大学 | Capacitive flexible acceleration sensor and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6196067B1 (en) * | 1998-05-05 | 2001-03-06 | California Institute Of Technology | Silicon micromachined accelerometer/seismometer and method of making the same |
| CN1477655A (en) * | 2003-06-12 | 2004-02-25 | 上海交通大学 | Floating structure radio-frequency microinductor and its production process |
| US20040187578A1 (en) * | 2003-03-26 | 2004-09-30 | Malametz David L | Bending beam accelerometer with differential capacitive pickoff |
-
2011
- 2011-09-28 CN CN201110298158.8A patent/CN102435773B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6196067B1 (en) * | 1998-05-05 | 2001-03-06 | California Institute Of Technology | Silicon micromachined accelerometer/seismometer and method of making the same |
| US20040187578A1 (en) * | 2003-03-26 | 2004-09-30 | Malametz David L | Bending beam accelerometer with differential capacitive pickoff |
| CN1477655A (en) * | 2003-06-12 | 2004-02-25 | 上海交通大学 | Floating structure radio-frequency microinductor and its production process |
Non-Patent Citations (1)
| Title |
|---|
| JONATHAN HAMMOND ET AL.: "Inertial transducer design for manufacturability and performance at Motorola", 《THE 12TH INTERNATIONAL CONFERENCE ON SOLID STATE SENSORS,ACTUATORS AND MICROSYSTEMS》, 12 June 2003 (2003-06-12), pages 85 - 90 * |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103439527A (en) * | 2013-09-02 | 2013-12-11 | 东南大学 | Capacitance type minitype machine wind speed wind direction sensor |
| CN103439527B (en) * | 2013-09-02 | 2015-09-09 | 东南大学 | Capacitance type micro mechanical wind speed wind direction sensor |
| CN103424567A (en) * | 2013-09-02 | 2013-12-04 | 东南大学 | Capacitive micro-machine wind speed and direction sensor |
| US11231441B2 (en) | 2015-05-15 | 2022-01-25 | Invensense, Inc. | MEMS structure for offset minimization of out-of-plane sensing accelerometers |
| CN106153087A (en) * | 2015-05-15 | 2016-11-23 | 因文森斯公司 | Shift suppression electrode |
| US10466268B2 (en) | 2015-05-15 | 2019-11-05 | Invensense, Inc. | Offset rejection electrodes |
| CN106771361A (en) * | 2016-12-15 | 2017-05-31 | 西安邮电大学 | Double-capacitor micro-mechanical acceleration transducer and the temperature self-compensation system based on it |
| CN106771361B (en) * | 2016-12-15 | 2023-04-25 | 西安邮电大学 | Double-capacitance type micro-mechanical acceleration sensor and temperature self-compensation system based on same |
| CN111164401A (en) * | 2017-07-26 | 2020-05-15 | 罗伯特·博世有限公司 | Micromechanical device and method for producing a micromechanical device |
| US11486782B2 (en) | 2017-07-26 | 2022-11-01 | Robert Bosch Gmbh | Micromechanical device and method for manufacturing a micromechanical device |
| CN112472073B (en) * | 2020-11-23 | 2022-05-24 | 四川大学华西医院 | Intelligent waistband |
| CN112472073A (en) * | 2020-11-23 | 2021-03-12 | 四川大学华西医院 | Intelligent waistband |
| CN114839398A (en) * | 2022-04-27 | 2022-08-02 | 东南大学 | Capacitive flexible acceleration sensor and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102435773B (en) | 2014-07-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102435773B (en) | Differential micro capacitor for single-shaft precision accelerometer and preparation method thereof | |
| CN104165623B (en) | Internal-external double-electrode type miniature hemispherical resonance gyroscope and preparation method thereof | |
| CN105137121B (en) | A kind of preparation method of low stress accelerometer | |
| JP5317826B2 (en) | Manufacturing method of capacitive electromechanical transducer | |
| CN102495234B (en) | Capacitive type micro-acceleration sensor with double-sided symmetrical elastic beam structure and manufacturing method | |
| US8890391B2 (en) | External force detection apparatus and external force detection sensor | |
| CN106809799B (en) | Acceleration transducer and its manufacturing method | |
| CN105917203A (en) | Strain-based sensing of mirror position | |
| CN102520032B (en) | CMUT (Capacitive Micromachined Ultrasonic Transducer)-based biochemical transducer and manufacturing method thereof | |
| CN102353610A (en) | Capacitance micro-machining ultrasonic sensor for measuring density and production method thereof | |
| CN104197921B (en) | Pattern-transferred embossed miniature hemispherical resonant gyroscope and manufacturing method thereof | |
| CN1987486A (en) | Integrated optic grating interference micro mechanical acceleration sensor and its producing method | |
| CN103234567A (en) | MEMS (micro-electromechanical systems) capacitive ultrasonic sensor on basis of anodic bonding technology | |
| Wu et al. | A nano-g MEMS accelerometer for earthquake monitoring | |
| CN101561510A (en) | Chip of three-dimensional MEMS geophone and preparation method thereof | |
| CN111766403B (en) | Comb micro-accelerometer resisting high-g-value impact and preparation method thereof | |
| CN102332351B (en) | Manufacturing method of micro-variable capacitor for micro-nanometer measurement | |
| RU194560U1 (en) | Sensor element of the molecular electronic sensor | |
| CN103675344B (en) | A kind of accelerometer and its manufacturing process | |
| JP5598515B2 (en) | Physical quantity sensor and manufacturing method thereof | |
| CN111595381A (en) | Bionic cilium capacitive micro-sensor with back lead and preparation method thereof | |
| CN105399047B (en) | A kind of processing method of many electric capacity multi-finger Micro-accelerometers | |
| JP5120176B2 (en) | Physical quantity sensor and manufacturing method thereof | |
| CN110615402B (en) | MEMS piezoelectric vector hydrophone with simply supported cantilever beam structure and preparation method thereof | |
| CN114296014B (en) | Lorentz force-based three-dimensional MEMS magnetic field sensor and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140702 Termination date: 20170928 |