CN103066085A - Pixel unit, pixel array, image sensor and electronic product - Google Patents
Pixel unit, pixel array, image sensor and electronic product Download PDFInfo
- Publication number
- CN103066085A CN103066085A CN2012105498885A CN201210549888A CN103066085A CN 103066085 A CN103066085 A CN 103066085A CN 2012105498885 A CN2012105498885 A CN 2012105498885A CN 201210549888 A CN201210549888 A CN 201210549888A CN 103066085 A CN103066085 A CN 103066085A
- Authority
- CN
- China
- Prior art keywords
- incident light
- metal level
- sensitive cell
- photo
- photosensitive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
The invention discloses a pixel unit, a pixel array, an image sensor and an electronic product. The pixel unit comprises a photosensitive layer, wherein the photosensitive layer comprises a photosensitive element, a switch element, a metal layer and an incident light collecting component; the photosensitive element is arranged on a substrate to collect photosensitive electric signals acquired after photovoltaic conversion is conducted by incident light, the metal layer is arranged above the photosensitive layer to transmit control signals for the photosensitive element and output the photosensitive electric signals to a peripheral processing circuit, and the incident light collecting component is used for changing transmission paths of incident light and collecting the incident light to photosensitive areas of the photosensitive element. Because an incident light collecting unit is arranged in the pixel unit, such as an isolating ring, an embedded element and a sub-metal layer with an inclined plane, the incident light emits to the photosensitive areas of the photosensitive element to the greatest extent, and therefore effective collection of light of areas outside the photosensitive element is improved.
Description
Technical field
The invention belongs to, specifically, relate to a kind of pixel cell, pel array, imageing sensor and electronic product.
Background technology
Imageing sensor can be converted to the signal of telecommunication with light signal.At present, imageing sensor can be divided into the imageing sensor based on charge-coupled device (CCD), and based on complementary metal oxide semiconductors (CMOS) (CMOS) imageing sensor.Because cmos image sensor compares with ccd sensor, the low-power consumption that has, low-cost and with the characteristics such as CMOS process compatible, therefore be widely used.Be applied to consumer electronics field such as miniature digital camera (DIGITAL SPY CAMERA such as removing, DSC), mobile phone cam, video camera and digital single anti-(DIGITAL SINGLE LENSE REFLEX, DSLR) in, also obtained application in fields such as automotive electronics, monitoring, biotechnology and medical science.
In the cmos image sensor, can be according to number of transistors purpose number in the pixel cell, be categorized into 3T, 4T and 5T formula, in the cmos image sensor of 3T formula, pixel cell comprises a photodiode and 3 MOS transistor, and 4T and 5T formula pixel cell comprise respectively a photodiode and 4 or 5 MOS transistor.Photodiode in the pixel cell is photosensitive unit, realizes collection and opto-electronic conversion to light, and other MOS transistor is control unit, the main controls such as choosing, reset and read that realizes photodiode.
In the prior art, in cmos image sensor, the sensitivity of each pixel cell ratio that the area of photodiode accounts for whole pixel cell area directly and in the pixel cell is directly proportional, this ratio is called fill factor, curve factor, owing to there are 3 that are used for signal controlling between the photodiode, 4 or 5 transistors, therefore transistor has taken a large amount of area of whole pixel cell, so that usually in the cmos image sensor fill factor, curve factor of pixel cell between 20% to 50%, in other words, incident light conductively-closed on 50% to 80% the area is fallen, can not be collected and participate in by photodiode opto-electronic conversion, thereby, caused the loss of incident light and the reduction of pixel cell sensitivity.
Summary of the invention
Technical problem to be solved by this invention provides a kind of pixel cell, pel array, imageing sensor and electronic product.
In order to solve the problems of the technologies described above, the invention provides a kind of pixel cell, comprising:
Photosensitive layer comprises:
Photo-sensitive cell is positioned on the substrate, carries out opto-electronic conversion for the collection incident light and obtains the sensitization signal of telecommunication;
Switching device is positioned on the described substrate, is used for output to control signal and the described sensitization signal of telecommunication of described photo-sensitive cell;
Metal level is positioned on the described photosensitive layer, is used for transmission and outputs to the peripheral processes circuit to the control signal of described photo-sensitive cell and with the described sensitization signal of telecommunication;
Incident light is assembled parts, is used for changing the transmission path of described incident light, described incident light is gathered the photosensitive region of described photo-sensitive cell.
Preferably, according to one embodiment of the invention, described switching device is covered by described metal level.
Preferably, according to one embodiment of the invention, described incident light is assembled parts and is comprised:
The incident light reflector element is used for by the first transmission path that changes described incident light of reflection, so that the photosensitive region of the described photo-sensitive cell of described incident light directive.
Preferably, according to one embodiment of the invention, described incident light reflector element is a shading ring, is arranged in surface on the sub-metal level of described metal level top layer.
Preferably, according to one embodiment of the invention, the ring body of described shading ring is dielectric material, is filled with the metal that can reflect the incident light in the ring cavity.
Preferably, according to one embodiment of the invention, described metal level comprises the bevelled sub-metal level of a tool, is used for changing the transmission path of described incident light, described incident light is gathered the photosensitive region of described photo-sensitive cell.
Preferably, according to one embodiment of the invention, described incident light is assembled parts and is comprised:
Light focusing unit is for the transmission path that changes described incident light, described incident light is gathered the photosensitive region of described photo-sensitive cell.
Preferably, according to one embodiment of the invention, described light focusing unit is a lenticule.
Preferably, according to one embodiment of the invention, described light focusing unit is arranged in the metal level between two adjacent on the vertical direction sub-metal levels, on the position that covers described photo-sensitive cell.
In order to solve the problems of the technologies described above, the invention provides a kind of formation method of pixel cell, comprising:
Form photo-sensitive cell and switching device at substrate, to form photosensitive layer, wherein, described photo-sensitive cell carries out opto-electronic conversion for the collection incident light and obtains the sensitization signal of telecommunication, and described switching device is used for output to control signal and the described sensitization signal of telecommunication of described photo-sensitive cell;
On described photosensitive layer, form metal level, output to the peripheral processes circuit with transmission to the control signal of described photo-sensitive cell and with the described sensitization signal of telecommunication;
Path on the described photo-sensitive cell of being transferred to of incident light forms incident light and assembles parts, to be used for changing the transmission path of described incident light, described incident light is gathered the photosensitive region of described photo-sensitive cell.
Preferably, according to one embodiment of the invention, when on described photosensitive layer, forming metal level, described switching device is covered by described metal level.
Preferably, according to one embodiment of the invention, when forming incident light gathering parts, form an incident light reflector element, be used for the transmission path by the described incident light of the first change of reflection, so that the photosensitive region of the described photo-sensitive cell of described incident light directive.
Preferably, according to one embodiment of the invention, when forming the incident light reflector element, the sub-metal level of top layer top face metallization medium layer in described metal level, and this dielectric layer carried out photoetching and etching forms a ring body, and in the ring cavity of this ring body, fill the metal that can reflect the incident light, to form a shading ring.
Preferably, according to one embodiment of the invention, when on described photosensitive layer, forming metal level, make to comprise the bevelled sub-metal level of tool in the described metal level, be used for again changing by reflection the transmission path of described incident light, described incident light is gathered the photosensitive region of described photo-sensitive cell.
Preferably, according to one embodiment of the invention, when forming incident light gathering parts, the path on the described photo-sensitive cell of being transferred to of incident light forms a light focusing unit, change the transmission path of described incident light, and described incident light is gathered the photosensitive region of described photo-sensitive cell.
Preferably, according to one embodiment of the invention, between two adjacent on the vertical direction in metal level metal levels, to form a light focusing unit on the position that covers described photo-sensitive cell.
In order to solve the problems of the technologies described above, the invention provides a kind of pel array, comprise above-mentioned pixel cell.
In order to solve the problems of the technologies described above, the invention provides a kind of imageing sensor, comprise above-mentioned pel array.
In order to solve the problems of the technologies described above, the invention provides a kind of electronic product, comprise above-mentioned imageing sensor.This electronic product can be the product of arbitrary disposition imageing sensor such as mobile phone, e-book, camera etc.
Compare with existing scheme, by the incident light accumulation unit is set in pixel cell, such as the bevelled sub-metal level of shading ring/embedded lenticule/tool, so that the delivering path of incident light changes, the photosensitive region of directive photo-sensitive cell as far as possible, thereby improved the effective collection to zonal ray beyond the photo-sensitive cell, the sensitivity that has improved pixel cell.
Description of drawings
Fig. 1 is the structural representation of pixel cell in the embodiment of the invention one;
Fig. 2 is the schematic diagram of pixel cell structure in the embodiment of the invention two;
Fig. 3 is the schematic diagram of pixel cell structure in the embodiment of the invention three;
Fig. 4 is the formation method flow diagram of 41 kinds of pixel cells of the embodiment of the invention;
Figure 5 shows that a part of structural representation of execution in step 401, the rear pixel cell of step 402;
Figure 6 shows that in the execution in step 403 a part of structural representation that forms pixel cell after the light focusing unit;
Figure 7 shows that in the execution in step 403 another part structural representation that forms pixel cell after the light focusing unit;
Fig. 8 for the conductive through hole that forms the sub-metal level in intermediate layer and the sub-layer metal interconnection of top layer after a part of structural representation of pixel cell;
Fig. 9 is a part of structural representation of pixel cell behind the sub-metal level of formation top layer;
Figure 10 is for forming the afterwards complete structure schematic diagram of pixel cell of shading ring.
Embodiment
Below will cooperate graphic and embodiment describes embodiments of the present invention in detail, by this to the present invention how the application technology means implementation procedure that solves technical problem and reach the technology effect can fully understand and implement according to this.
Among the following embodiment of the present invention, the present invention arranges an incident light accumulation unit such as shading ring at incident light to the transmission path of photo-sensitive cell, metal level inclined-plane and embedded lenticular composite construction, wherein shading ring enters embedded lenticule with the oblique incident ray reflection, the metal level inclined-plane enters embedded lenticule with the reflection of vertical incidence light, because it not is perpendicular to photodiode surface that light after the reflection of shading ring and metal level inclined-plane is arranged, but certain angle is arranged, therefore they might not all arrive the surface of photodiode and produce photovoltaic reaction, and the embedded lenticule by high index of refraction, these have the reverberation of certain angle again to be focused on by lenticule, behind superrefraction, form the light that approaches perpendicular to photodiode surface, so just realized the effective collection to zonal ray beyond the photodiode, the sensitivity that has improved pixel cell.And because metal interconnecting wires is to be interspersed between the multilayer, incident light can not arrive metal-oxide-semiconductor zone and cause electric leakage, does not namely have noise and produces, and shading ring has further prevented the generation of crosstalking between the pixel simultaneously.
Fig. 1 is the structural representation of pixel cell in the embodiment of the invention one.As shown in Figure 1, in the present embodiment, pixel cell comprises photosensitive layer (not shown), metal level (not shown) and incident light gathering parts 103, wherein:
Photosensitive layer comprises photo-sensitive cell 111 and switch element 121, and photo-sensitive cell 111 is positioned on the substrate (not shown), carries out opto-electronic conversion for the collection incident light and obtains the sensitization signal of telecommunication; Switching device 121 is positioned on the described substrate, is used for output to control signal and the described sensitization signal of telecommunication of described photo-sensitive cell 111.In the present embodiment, owing to dissect the cause of direction, can only see two switching devices, this switching device 121 can be the mos transistor, and perhaps other types as long as can realize the signal transmission, do not repeat them here.
Metal level is positioned on the described photosensitive layer, is used for transmission and outputs to the peripheral processes circuit to the control signal of described photo-sensitive cell 111 and with the described sensitization signal of telecommunication; Can comprise the sub-metal level of multilayer in the metal level, arranging of metal level itself is prior art, and to those skilled in the art, it should understand how to arrange and which floor is set, and does not repeat them here.Need to prove, the different sub-metal levels of metal level connect with adopting conductive contact hole 131 being connected of switching device termination, in addition, interconnection between the different sub-metal levels can connect by conductive through hole 141, as for the needs that transmit based on signal in the metal level, the interconnection between the sub-metal level belongs to prior art for this area those skilled in the art, perhaps according to enlightenment of the present invention, need not creative work can realize, does not repeat them here.
In the present embodiment, described switching device 121 is covered by described metal level, because metal interconnecting wires is to be interspersed between the multilayer, so that switching device 121 is covered by metal level, incident light can not arrive the zone at switching device 121 places and cause electric leakage, does not namely have noise and produces.
Incident light is assembled parts 103, is used for changing the transmission path of described incident light, described incident light is gathered the photosensitive region of described photo-sensitive cell 111.
In the present embodiment, described incident light is assembled parts 103 and can be comprised: incident light reflector element 113 is used for by the first transmission path that changes described incident light of reflection, so that the photosensitive region of the described photo-sensitive cell 111 of described incident light directive.
Preferably, described incident light reflector element is a shading ring, is arranged in surface on the sub-metal level of described metal level top layer.Because in the present embodiment, metal level has comprised three straton metal levels, i.e. the sub-metal level 112 of bottom, the sub-metal level 122 in intermediate layer, the sub-metal level 132 of top layer.Therefore, shading ring can be formed directly on the sub-metal level 132 of top layer, and particularly, the ring body of described shading ring can be dielectric material, is filled with the metal that can reflect the incident light in the ring cavity.Need to prove, this incident light reflector element is not limited to a shading ring, also can be other structure member, as long as can change by reflection the transmission path of incident light, make the try one's best photosensitive region of directive photo-sensitive cell 111 of incident light, with by photo-sensitive cell 111 participation opto-electronic conversion as much as possible, form the sensitization signal of telecommunication.In the present embodiment, shading ring changes the transmission path of incident light on the one hand, on the one hand, can also further prevent the generation of crosstalking between the pixel in addition.
Further, in the present embodiment, described incident light is assembled parts 103 and can also be comprised: light focusing unit 123, and for the transmission path that changes described incident light, described incident light is gathered the photosensitive region of described photo-sensitive cell 111.Particularly, described light focusing unit can be arranged in the metal level between two adjacent on the vertical direction sub-metal levels, on the position that covers described photo-sensitive cell 111.Described light focusing unit can be an embedded lenticule.
In the present embodiment, light focusing unit 123 concrete formation between the dynatron metal level 122, and to those skilled in the art, in an other embodiment of the present invention, light focusing unit 123 also can be formed between the sub-metal level 112 of bottom, perhaps, is formed between the sub-metal level 132 of top layer, during concrete formation, corresponding sub-metal level upper surface or lower surface are reference again.Those of ordinary skills need not creative work how light focusing unit can be set according to the enlightenment of the embodiment of the invention, do not repeat them here.Be illustrated in figure 2 as the schematic diagram of pixel cell structure in the embodiment of the invention two, light focusing unit 123 is arranged between the sub-metal level 112 of bottom, repeats no more in detail, can participate in above-mentioned Fig. 1 and associated description.
Further, in the present embodiment, may be to covering the incident light of photo-sensitive cell 111 for fear of metal level, make described metal level comprise the bevelled sub-metal level of a tool, be used for again changing the transmission path of described incident light, described incident light is gathered the photosensitive region of described photo-sensitive cell 111.Particularly, in the present embodiment, when forming the sub-metal level 132 of top layer, by layout design the from down to up live width that the top layer interest belongs to is dwindled gradually, then the sidewall that is adjusted at metal by the metal etch menu forms an inclined-plane.Need explanation the time, also the sub-metal level 122 in intermediate layer can be arranged to have an inclined-plane, to avoid covering incident light, as shown in Figure 3, schematic diagram for pixel cell structure in the embodiment of the invention three, the sub-metal level 122 of the sub-metal level 112 of top layer and intermediate layer is arranged to have an inclined-plane simultaneously repeats no more in detail, can participate in above-mentioned Fig. 1 and associated description.
Figure 4 shows that the formation method flow diagram of 41 kinds of pixel cells of the embodiment of the invention, as shown in Figure 4, in the present embodiment, it can comprise:
Step 401, form photo-sensitive cell and switching device at substrate, to form photosensitive layer, wherein, described photo-sensitive cell carries out opto-electronic conversion for the collection incident light and obtains the sensitization signal of telecommunication, and described switching device is used for output to control signal and the described sensitization signal of telecommunication of described photo-sensitive cell;
Figure 5 shows that a part of structural representation of execution in step 401, the rear pixel cell of step 402, it comprises photosensitive layer and wherein photo-sensitive cell 111 and switch element 121, and the sub-metal level 122 of the sub-metal level 112 of the bottom in the metal level and intermediate layer, and the contact hole 131 that is electrically connected with switch element 121 of the sub-metal level 112 of bottom, the conductive through hole 141 of the sub-metal level 122 in intermediate layer and sub-metal level 112 interconnection of bottom.
In the present embodiment, when on described photosensitive layer, forming metal level in the step 402, can lay by the dislocation of different sub-metal levels in the metal level, described switching device is covered by described metal level.
In the present embodiment, when on described photosensitive layer, forming metal level in the step 402, make to comprise the bevelled sub-metal level of tool in the described metal level, be used for again changing by reflection the transmission path of described incident light, described incident light is gathered the photosensitive region of described photo-sensitive cell.
In the present embodiment, when forming incident light gathering parts in the step 403, on the path on the described photo-sensitive cell of being transferred to of incident light, can form a light focusing unit, change the transmission path of described incident light, and described incident light be gathered the photosensitive region of described photo-sensitive cell.Particularly, between two adjacent on the vertical direction in metal level metal levels, to form a light focusing unit on the position that covers described photo-sensitive cell.For example, between the sub-metal level 122 in intermediate layer, form a collective optics such as embedded lenticule.Particularly, Figure 6 shows that in the execution in step 403 a part of structural representation that forms pixel cell after the light focusing unit, Figure 7 shows that in the execution in step 403 another part structural representation that forms pixel cell after the light focusing unit, shown in Fig. 6 and 7, step is on the basis of Fig. 5, at the lenticular dielectric layer 1231 of metallic intermediate layer layer 122 upper surface chemical vapor deposition one deck, lenticule dielectric layer material can use the material of the highs index of refraction such as silicon nitride.Form by photoetching and etching and to have the certain curvature radius, be positioned at the embedded lenticule of photo-sensitive cell 111 tops.
In step 403, because metal level has three straton metal levels in this enforcement, therefore, after forming light focusing unit 123, also need to form the conductive through hole 141 of the sub-metal level 122 in intermediate layer and sub-metal level 132 interconnection of top layer, as shown in Figure 8, a part of structural representation for pixel cell behind the conductive through hole that forms the sub-metal level in intermediate layer and the sub-layer metal interconnection of top layer, can pass through the dielectric layer deposit, the photoetching of through hole and etching, the deposit of through hole internal barrier and tungsten, return by tungsten and to carve or conductive through hole that tungsten CMP (chemico-mechanical polishing) is formed for interconnecting, do not repeat them here.
Further, as shown in Figure 9, be a part of structural representation of pixel cell behind the sub-metal level of formation top layer.In the present embodiment, specifically the sub-metal level 132 of top layer in the metal level is arranged to have the inclined-plane.Need explanation the time, because the dislocation mode of metal level neutron metal level is different, if incident light originally can not covered to the transmission of photo-sensitive cell in the position of the sub-metal level of top layer, but incident light may be covered in other positions such as the dynatron metal level, at this moment, also the dynatron metal level can be arranged to have the inclined-plane.Other analogues do not repeat them here, and those of ordinary skills need not can expect in conjunction with the actual conditions flexible design by creative work according to the enlightenment of prior art or the embodiment of the invention.When forming the bevelled top layer interest of tool and belong to, can reduce live width by layout design, so that vertical incidence light fully enters reflector space.The angle on the inclined-plane that the top layer interest belongs to is regulated to embedded lenticular distance according to reflecting surface, to guarantee that reflection ray can arrive embedded lenticular surface, the angle on metal inclined-plane can recently be regulated by the composition of regulating reactive polymeric thing in the etching menu.
In the present embodiment, when forming incident light gathering parts in the step 403, when forming incident light gathering parts, can also form an incident light reflector element, be used for by the first transmission path that changes described incident light of reflection, so that the photosensitive region of the described photo-sensitive cell of described incident light directive.Particularly, when forming the incident light reflector element, the sub-metal level of top layer top face metallization medium layer in described metal level, and this dielectric layer carried out photoetching and etching forms a ring body, and in the ring cavity of this ring body, fill the metal that can reflect the incident light, to form a shading ring.As shown in figure 10, for forming the afterwards complete structure schematic diagram of pixel cell of shading ring.
Above-mentioned explanation illustrates and has described some preferred embodiments of the present invention, but as previously mentioned, be to be understood that the present invention is not limited to the disclosed form of this paper, should not regard the eliminating to other embodiment as, and can be used for various other combinations, modification and environment, and can in invention contemplated scope described herein, change by technology or the knowledge of above-mentioned instruction or association area.And the change that those skilled in the art carry out and variation do not break away from the spirit and scope of the present invention, then all should be in the protection range of claims of the present invention.
Claims (19)
1. a pixel cell is characterized in that, comprising:
Photosensitive layer comprises:
Photo-sensitive cell is positioned on the substrate, carries out opto-electronic conversion for the collection incident light and obtains the sensitization signal of telecommunication;
Switching device is positioned on the described substrate, is used for output to control signal and the described sensitization signal of telecommunication of described photo-sensitive cell;
Metal level is positioned on the described photosensitive layer, is used for transmission and outputs to the peripheral processes circuit to the control signal of described photo-sensitive cell and with the described sensitization signal of telecommunication;
Incident light is assembled parts, is used for changing the transmission path of described incident light, described incident light is gathered the photosensitive region of described photo-sensitive cell.
2. pixel cell according to claim 1 is characterized in that, described switching device is covered by described metal level.
3. pixel cell according to claim 1 is characterized in that, described incident light is assembled parts and comprised:
The incident light reflector element is used for by the first transmission path that changes described incident light of reflection, so that the photosensitive region of the described photo-sensitive cell of described incident light directive.
4. pixel cell according to claim 3 is characterized in that, described incident light reflector element is a shading ring, is arranged in surface on the sub-metal level of described metal level top layer.
5. pixel cell according to claim 4 is characterized in that, the ring body of described shading ring is dielectric material, is filled with the metal that can reflect the incident light in the ring cavity.
6. pixel cell according to claim 1 is characterized in that, described metal level comprises the bevelled sub-metal level of a tool, is used for changing the transmission path of described incident light, described incident light is gathered the photosensitive region of described photo-sensitive cell.
7. pixel cell according to claim 1 is characterized in that, described incident light is assembled parts and comprised:
Light focusing unit is for the transmission path that changes described incident light, described incident light is gathered the photosensitive region of described photo-sensitive cell.
8. pixel cell according to claim 7 is characterized in that, described light focusing unit is a lenticule.
9. pixel cell according to claim 7 is characterized in that, described light focusing unit is arranged in the metal level between two adjacent on the vertical direction sub-metal levels, on the position that covers described photo-sensitive cell.
10. the formation method of a pixel cell is characterized in that, comprising:
Form photo-sensitive cell and switching device at substrate, to form photosensitive layer, wherein, described photo-sensitive cell carries out opto-electronic conversion for the collection incident light and obtains the sensitization signal of telecommunication, and described switching device is used for output to control signal and the described sensitization signal of telecommunication of described photo-sensitive cell;
On described photosensitive layer, form metal level, output to the peripheral processes circuit with transmission to the control signal of described photo-sensitive cell and with the described sensitization signal of telecommunication;
Path on the described photo-sensitive cell of being transferred to of incident light forms incident light and assembles parts, to be used for changing the transmission path of described incident light, described incident light is gathered the photosensitive region of described photo-sensitive cell.
11. method according to claim 10 is characterized in that, when forming metal level on described photosensitive layer, described switching device is covered by described metal level.
12. method according to claim 10, it is characterized in that, when forming incident light gathering parts, form an incident light reflector element, be used for by the first transmission path that changes described incident light of reflection, so that the photosensitive region of the described photo-sensitive cell of described incident light directive.
13. method according to claim 12, it is characterized in that, when forming the incident light reflector element, the sub-metal level of top layer top face metallization medium layer in described metal level, and this dielectric layer carried out photoetching and etching forms a ring body, and in the ring cavity of this ring body, fill the metal that can reflect the incident light, to form a shading ring.
14. method according to claim 10, it is characterized in that, when on described photosensitive layer, forming metal level, make and comprise the bevelled sub-metal level of tool in the described metal level, be used for again changing by reflection the transmission path of described incident light, described incident light is gathered the photosensitive region of described photo-sensitive cell.
15. method according to claim 10, it is characterized in that, when forming incident light gathering parts, path on the described photo-sensitive cell of being transferred to of incident light forms a light focusing unit, change the transmission path of described incident light, and described incident light is gathered the photosensitive region of described photo-sensitive cell.
16. method according to claim 15 is characterized in that, between two adjacent on the vertical direction in metal level metal levels, to form a light focusing unit on the position that covers described photo-sensitive cell.
17. a pel array is characterized in that, comprises any described pixel cell of claim 1 ~ 9.
18. an imageing sensor is characterized in that, comprises the described pel array of claim 17.
19. an electronic product is characterized in that, comprises the described imageing sensor of claim 18.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210549888.5A CN103066085B (en) | 2012-12-17 | 2012-12-17 | Pixel cell, pel array, imageing sensor and electronic product |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210549888.5A CN103066085B (en) | 2012-12-17 | 2012-12-17 | Pixel cell, pel array, imageing sensor and electronic product |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103066085A true CN103066085A (en) | 2013-04-24 |
| CN103066085B CN103066085B (en) | 2017-06-23 |
Family
ID=48108635
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210549888.5A Active CN103066085B (en) | 2012-12-17 | 2012-12-17 | Pixel cell, pel array, imageing sensor and electronic product |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103066085B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104952893A (en) * | 2014-03-25 | 2015-09-30 | 精工电子有限公司 | Image sensor |
| CN106971173A (en) * | 2017-04-13 | 2017-07-21 | 京东方科技集团股份有限公司 | Touch base plate and display panel |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6166369A (en) * | 1998-11-25 | 2000-12-26 | Intel Corporation | Microcollector for photosensitive devices using sol-gel |
| CN1819226A (en) * | 2004-12-30 | 2006-08-16 | 东部亚南半导体株式会社 | CMOS image sensor and method for fabricating the same |
| US7110034B2 (en) * | 2001-08-31 | 2006-09-19 | Canon Kabushiki Kaisha | Image pickup apparatus containing light adjustment portion with reflection of a portion of light onto adjacent pixels |
| US20060220073A1 (en) * | 2005-03-30 | 2006-10-05 | Fuji Photo Film Co., Ltd. | Solid-state image pickup element and method of producing the same |
| CN101266985A (en) * | 2007-03-14 | 2008-09-17 | 格科微电子（上海）有限公司 | Method for reducing incident light noise of image sensor |
-
2012
- 2012-12-17 CN CN201210549888.5A patent/CN103066085B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6166369A (en) * | 1998-11-25 | 2000-12-26 | Intel Corporation | Microcollector for photosensitive devices using sol-gel |
| US7110034B2 (en) * | 2001-08-31 | 2006-09-19 | Canon Kabushiki Kaisha | Image pickup apparatus containing light adjustment portion with reflection of a portion of light onto adjacent pixels |
| CN1819226A (en) * | 2004-12-30 | 2006-08-16 | 东部亚南半导体株式会社 | CMOS image sensor and method for fabricating the same |
| US20060220073A1 (en) * | 2005-03-30 | 2006-10-05 | Fuji Photo Film Co., Ltd. | Solid-state image pickup element and method of producing the same |
| CN101266985A (en) * | 2007-03-14 | 2008-09-17 | 格科微电子（上海）有限公司 | Method for reducing incident light noise of image sensor |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104952893A (en) * | 2014-03-25 | 2015-09-30 | 精工电子有限公司 | Image sensor |
| CN104952893B (en) * | 2014-03-25 | 2020-07-07 | 艾普凌科有限公司 | Image sensor with a plurality of pixels |
| CN106971173A (en) * | 2017-04-13 | 2017-07-21 | 京东方科技集团股份有限公司 | Touch base plate and display panel |
| CN106971173B (en) * | 2017-04-13 | 2021-01-26 | 京东方科技集团股份有限公司 | Touch substrate and display panel |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103066085B (en) | 2017-06-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6796169B2 (en) | Vertical stacked image sensor | |
| US20220102400A1 (en) | Solid-state image-capturing device and production method thereof, and electronic appliance | |
| US9620538B2 (en) | Image sensors including non-aligned grid patterns | |
| CN101335284B (en) | Solid-state imaging device and camera module | |
| CN102709299B (en) | Backside illuminated image sensor | |
| CN102142448B (en) | Image sensor | |
| KR100868629B1 (en) | Image Sensor and Method for Fabrication of the Same | |
| CN103681710B (en) | Imaging sensor, imaging device and the device and method for manufacturing imaging sensor | |
| US20050274871A1 (en) | Method and apparatus for collecting photons in a solid state imaging sensor | |
| CN103733342A (en) | Multi-substrate image sensor having a dual detection function | |
| US20090189055A1 (en) | Image sensor and fabrication method thereof | |
| CN103579272B (en) | The manufacture method of imaging device, imaging system and imaging device | |
| KR20170043140A (en) | Image sensor | |
| CN102468315A (en) | Solid-state imaging device and electronic apparatus | |
| CN101964348A (en) | Solid-state imaging device, manufacturing method thereof, and camera | |
| US20120038814A1 (en) | Solid-state image sensing device, method of manufacturing the same, and electronic apparatus | |
| KR20060116458A (en) | Image sensor having embedded lens | |
| CN107154414B (en) | Back-illuminated cmos image sensors and preparation method thereof | |
| CN103579264A (en) | System and method for fabricating 3D image sensor structure | |
| CN105428384A (en) | Image sensor and manufacturing method thereof | |
| CN104701333B (en) | System image sensor package on three-dimensional chip | |
| CN103972257A (en) | Stack type image sensor manufacturing method | |
| KR100678269B1 (en) | Fabricating method of the cmos image sensor and image sensor using the same | |
| CN104241306A (en) | Solid-state imaging apparatus, method of manufacturing the same, camera, imaging device, and imaging apparatus | |
| CN104009048A (en) | CMOS image sensor and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |