CN1030674C - 用于晶体生长的碳化硅表面的制备方法 - Google Patents
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- H—ELECTRICITY
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02518—Deposited layers
- H01L21/02609—Crystal orientation
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02612—Formation types
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02656—Special treatments
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- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
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Abstract
本发明是在一块单晶碳化硅晶体上形成一个基本的平表面的方法，将基本的平表面暴露在腐蚀性等离子体中，直至任何因机械制备该表面而引起的表面或表面下的损伤基本上被消除。然而，腐蚀是有限的，持续时间不超过在表面上等离子腐蚀发展新缺陷或者使现有缺陷恶化所要的时间，同时采用等离子体气体和电极系统，它们本身不会在表面中恶化或者引起显著的缺陷。
Description
本发明涉及用于晶体生长的碳化硅表面的制备。具体地说，本发明涉及一种干燥腐蚀碳化硅表面，然后在上面均匀地外延沉积一层碳化硅薄膜的方法。
在半导体装置的加工中，这样的装置的最重要和最基本的要求之一，是它们由具有特殊性质的起始材料制成。在许多应用中，合适的起始材料是一块单晶(有时称为单晶(monocrystalline))材料，正如那些熟悉电子装置的技术人员所熟知的那样，如果不仔细控制晶体的生长和工艺，在晶体中将会产生缺陷，这些缺陷严重影响了晶体以及由晶体制备的任何装置的电子性能。在许多场合，有缺陷的晶体使这样的装置变得无法操作。
晶体的突出特征之一是它们的内部有序。这种内部有序包括，通常在三维方向，物质(例如原子、离子或分子)的结构型式有规律的重复。这种有规律的重复不仅扩展至每个特定的原子、离子或分子的最邻近的环境，而且扩展至大范围，代表了基本结构型式的成百万次重复。
但是，在晶体结构中这种重复的一个优点是，在晶体结构中无论何时出现一个缺陷，晶体生长的性质是这样的，当晶体生长时，晶体中的缺陷将同样地再三再四地重复。这些缺陷通常称为位错，典型地，这样的结构缺陷通常扩展至几百个的距离，位错的典型形式称为螺型位错刃型位错、缺陷的塞积、反相位晶界、和双定位晶界。这些缺陷可以很严重，使得晶体的表面形态显示出可见的不均匀性。另外，在象碳化硅这样的材料中，碳化硅可以形成大量的多型体，这些多型体为微小的热动力学差异所区分，这样的缺陷促进多型体的成核是不希望发生的，而不是促进基晶的多型体的成核。
各种负电荷效应通常起源于这样的缺陷和位错。最严重的电效应是在许多类型的装置中，出现不希望或者不合格的漏电量。另一种效应是因为有缺陷的晶体中的散射碰撞而降低了电子的迁移率。在特定的装置中，电子迁移率的降低本身显示为电阻增加。在光学装置，例如光辐射二极管中，晶体缺陷导致在辐射过程辐射波长变化，并且促使带宽展宽，不合于要求。
在制造某些半导体装置中所希望的，并且在制造另一些半导体装置中所必需的一种晶体生长技术，是一种单晶半导体材料薄膜，在相同的或者不同的半导体材料的另一表面上的生长，或者甚至生长在非半导体基片上。这种生长通常采用诸如液相取向外延生长或者化学气相沉积的技术，半导体工艺领域中的普通技术人员通常熟知这些技术。通常运用这些工艺，在已有的材料上，仔细地生长出新结晶材料的薄膜或者“外延”层。晶体生长过程的性质是这样的，在新结晶材料将要沉积的表面中的缺陷，趋于原封不动地复制在生长在该表面上的新结晶材料中。因为外延层通常是半导体材料的那些部分，它们用于制成和控制所要求的电子装置，所以这些被复制的缺陷可使所得到的晶体，从电子学角度来说，不能满足要求，甚至丧失功能。
于是，需要严格制备表面，在该表面上，晶体外延生长，并且使得用于电子装置的半导体材料的生产过程中的缺陷减至最小或者基本上消除。
然而，所有表面制备技术的问题在于，试图从表面上消除已有的损伤或缺陷，而不在这一过程引起新的损伤，在这一方面，熟悉半导体表面制备的技术人员知道，一种典型的技术包括生产一块晶体，把该块晶体锯成或者切成更小的晶体或晶片，在一块硬表面上用研磨膏研磨该晶体，迅速磨去该材料的大部分，然后用类似的研磨膏抛光该晶体表面，不过用一种更轻缓的方式，并且换一块较软的表面，以产生半导体材料抛光的表面。在每个场合，这些步骤形成了“损伤成核缺陷”，这些缺陷在外延生长过程中被复制。
在抛光硅(Si)晶片的情形下，在最后的抛光步骤中，通过采用“抛光腐蚀”可以容易地消除损伤一成核缺陷。该步骤使用很细的研磨膏作为抛光介质，当Si表面被抛光时，该研磨膏也化学腐蚀Si表面。抛光的表面不仅光滑，而且基本上没有损伤。用于Si的典型的抛光腐蚀采用SiO2颗粒在基液(NaOH或KOH)中的悬浮液，它氧化Si表面。该氧化物反过来又被SiO2颗粒机械地除去。
近来，使用碳化硅(SiC)作为半导体材料重新引起了兴趣。长期以来，碳化硅作为半导体材料被认为具有某种优良的特性。这些特性包括宽带隙，高热导率，高饱和电子漂移速率，以及高电子迁移率。然而，将其商品化的障碍是，碳化硅需要不同于普通技术的高工艺温度，难于获得优良的起始材料，某些传统的掺杂技术难于实施，可能最重要的是，碳化硅结晶有150多种多型体，其中的许多被微小的热动力学差异所区分。但是，最近的进展，有可能以商业化的基础和规模，生产碳化硅和以碳化硅为基的装置。
但是，在进行碳化硅的外延生长中，已发现常用技术，切片，研磨和抛光碳化硅表面，然后进行化学气相沉积，产生许多明显的缺陷，包括缺陷的塞积以及类似物。这些缺陷显然起因于这些机械制备步骤所导致的表面下的损伤，象细抛光，湿腐蚀和氧化等后续步骤不能修复损伤。当外延层在表面上生长时，这些损伤反过来又导致缺陷的复制。
另外，适合于诸如硅之类材料的制备步骤并不类似地适合于碳化硅，如前所述，硅表面制备采用一种化学抛光，它不仅物理抛光，而且化学地稍微腐蚀硅。但是，碳化硅比硅更为化学稳定——于是不发生反应——现在尚无用于碳化硅的合适的类似的化学抛光。结果，对碳化硅要采用不同的技术。
一种用于从SiC表面消除剩留的缺陷的技术，是采用熔融盐材料，例如氢氧化钾(KOH)，进行液态或者“湿”腐蚀，但是，熔融盐腐蚀难于控制，通常需要高温(例如，700-800℃)，并且趋于化学腐蚀性，难于控制。
另一种尝试的方法包括阳极腐蚀，其中，要腐蚀的样品作成阳极，放在电解系统中，用较浓的氢氧化钾(例如，20％的KOH水溶液)，铬酸，或草酸，作为电解液。但是，有一个缺点，在任何给定的一组条件下，P型和n型材料的腐蚀速率显著不同。另外，阳极腐蚀是一个低效过程，它通常不适于商业化，而且在某些条件下，电极板也成问题。
SiC表面制备的另一个技术是氧化表面，然后除去氧化部分。可是，氧化技术有很多问题，包括不能以可行的速率除去足够多的材料。例如，要花一星期的时间用于氧化生长和除去，以除去1μm的某种类型的材料。氧化技术也会导致掺杂剂再分配效应，以及氧化引起的缺陷塞积。
相应地，制备碳化硅表面还需要一种方法用于进一步晶体生长，特别是外延生长，该方法可除去因必要的切割和抛光步骤而引起的损伤，同时避免因制备步骤本身而引入的另外的缺陷。
本发明的目的在于，提供一种碳化硅表面上外延生长一种单晶碳化硅薄膜的方法，该方法可降低所得到的薄膜中以及薄膜和碳化硅表面之间的界面中的缺陷密度。本发明达到了这一目的，通过一种方法在一块单晶碳化硅晶体上形成一个基本上是平面的表面，将该基本上是平面的表面暴露在腐蚀性等离子体中，直至任何因机械制备而引起的表面或表面下的损伤基本上被消除。不过，腐蚀是有限的，持续时间不超过在表面中等离子体腐蚀发展新缺陷或者使现有缺陷恶化所要的时间，同时采用本身不会在表面中恶化或者引起显著的缺陷的等离子体气体和电极系统。
本发明的上述目的和其它目的，本发明的优点和特点，达到这些目的的方法，将在下文中作详细描述，使之更为明了。
本发明是一种在碳化硅表面上外延生长一种单晶碳化硅薄膜的方法，该方法可降低所得到的薄膜中的以及薄膜如碳化硅表面之间界面中的缺陷密度。
本方法包括首先在一块单晶碳化硅晶体上形成一个基本上是平面的表面。在本发明优选的实施方案中，该步骤包括机械制备碳化硅晶体，以形成基本上是平面的表面。在普通技术中，通常用锯或切的方法切开一块碳化硅晶体，以露出一块特定的平表面。在后文中将要指出，该表面通常是依据晶体米勒指数(Millcrindices)特意选择的，以强化进一步生长。在一个典型的实施方案中，机械地制备晶体的步骤包括切开碳化硅晶体，露出一般的平表面，然后用研磨膏研磨该表面。如前所述，“研磨”(“Iapping”)这个术语涉及使用诸如金刚石膏之类的研磨膏以及另一个硬表面来研磨碳化硅表面。
在研磨步骤之后，一般用更细的研磨膏和更轻柔的抛光仪器来抛光该表面。如前所述，在以往的晶体生长技术中，抛光步骤有时代表了开始外延生长前的最后步骤。
在初始的机械制备之后，将基本上是平面的表面暴露在腐蚀性等离子体中，直至任何因机械制备而引起的表面或表面下的损伤基本上被消除。虽然本申请不希望被任何特定的理论所束缚，但是早期有关碳化硅的工作表明，抛光步骤会引起表面下损伤，甚至当机械地改善露出的平表面时亦如此。该表面下损伤显然为在该表面上生长的薄膜中的晶体缺陷提供了成核视野(nucleatiou sights)。利用腐蚀性等离子体除去碳化硅材料，显然有助于消除这种表面下缺陷，以及更明显的表面缺陷。
但是，腐蚀性等离子体步骤是有限的，持续时间不超过。在表面中等离子体腐蚀本身发展新缺陷或者使现有缺陷恶化所需的时间，可以理解，腐蚀技术的一般目的是以一种相当直接的方式除去材料，当本发明中用该技术制备平表面需要更仔细的技术。作为一般的准则，腐蚀过程持续太长时间，将会促进“微屏蔽”(“micromasing”)效应，在下面将作讨论。类似地，如果使腐蚀过程扩展的深度超过了需要的深度，则可能趋于暴露出另外的现有缺陷，在后面的外延生长步骤中，将复制出这些缺陷。相应地，为了消除损伤，通常必须除去至少200的材料，于是，一般优选的腐蚀深度为大约0.02-10um(1um等于10,000)，最优选的腐蚀深度是大约0.5-1um。
另外，本发明的方法还包括一种等离子体气体和电极系统，它们本身不会在表面中造成显著的缺陷。
在后面将作更充分的讨论，最后的步骤是用化学气相沉积方法在经腐蚀的表面上沉积一层单晶碳化硅薄膜。
腐蚀步骤必须以特殊方式进行，以保持本发明的优点。通常，使用等离子体气体和电极系统的步骤本身不会在表面中造成显著的缺陷，该步骤包括在两个电极之间建立等离子体发生电位差，然后通过在两个电极之间引入一种气体而产生等离子体。选择该气体是易于在等离子体中基本上分解成为它的元素组份的结果，从气体中分解出的所有组份，在等离子体中是挥发性的，结果至少一种分解的组份与碳化硅发生反应。依照这个判据选择气体很重要，因为象四氟甲烷(CF4)这种气体，虽然在等离子体条件下可与碳化硅发生反应，但趋于产生碳氟基，碳氟基反过来又趋于以碳氟化合物的形式，甚至以聚合物的形式，沉积在正被腐蚀的表面上。于是，必须选择这样一种气体，它既与碳化硅发生反应，它的分解组份又是可挥发的，而不会形成化合物沉积在表面上。
因此，在本发明的一个优选实施方案中从三氟化氮(NF3)形成反应性离子等离子体。而在另一个优选实施方案中选择的气体是大约10％氧化亚氮(N2O)在三氟化氮中的混合物。另一种方法是，可用含氟气体和含氧气体的其它混合物，只要它们满足要求，在等离子体中基本上分解成为它的元素组份，并且基本上所有的分解组份在等离子体中是挥发性的，至少一种分解组份与碳化硅发生反应，附加条件是，另一方面，剩下的所有组份都不干扰腐蚀过程或者所制备的表面。
类似地，在该方法的一个优选实施方案中产生反应性离子等离子体的步骤，包括向等离子体加直流偏压，如果需要的话，本方法进一步包括下述步骤，在靶上加上磁场，以提高碳化硅靶在等离子体中的腐蚀速率。在这种场合下，加磁场的步骤优选地包括在碳化硅靶附近放置一块磁铁。
那些熟悉等离子体技术的人员也可理解，任何其它的产生和维持等离子体的方法也可用于本发明。这样的其它方法包括，但不仅限于反应性离子束等离子体，和电子回旋共振(ECR)等离子体。ERC等离子体特别适合于在低压下获得均匀的等离子体。
作为腐蚀过程中的进一步考虑，必须仔细选定制备电极的材料。另外的类似腐蚀过程的结果观察表明，当受过阳极化处理的铝阳极作为靶时，在这样的腐蚀过程中，氧化铝(Al2O3)从阳极溅射到正被腐蚀的表面上。金属或金属氧化物的这些微小沉积物“微屏蔽”了表面，结果使得进一步的腐蚀不均匀。本专利中进一步要讨论的是，使用不锈钢阳极好象同样会溅射铁或铁化合物到表面上。另外，象铝这样的材料，会和等离子体中的氟发生反应，产生不希望有的另外的含氟物质，它们也积聚在腐蚀的表面上，这是不希望发生的。于是，为了消除氟和Al2O3在表面的沉积，在本发明的一个优选实施方案中，在腐蚀室中放入一个碳阳极涂层板。在本发明的方法中，碳有许多优点，特别是它具有低溅射率。另外，阳极上的碳会和等离子体中的氟组份发生反应，使之不会积聚在经腐蚀的碳化硅表面上。
另一种优选的涂层板材料是石英(SiO2)。当使用石英涂层板时，唯一形成的腐蚀产物只有SiFx(X＝1-4)，SiO和O2。所有这些组份在等离子体中是挥发性的，不会积聚在反应室中，也不会形成微屏蔽组份。另外，石英和碳一样还有某些优点，例如低溅射率和在碳化硅上的无害沉积。具体地说，如果SiO2溅射到碳化硅表面上的话，SiO2的腐蚀比碳化硅更快，于是可除去SiO2，没有明显的影响。
于是，本发明包括将基本上是平面的碳化硅表面作为靶固定在一个电极上，电极是用低溅射率的材料制备的，电极材料可与分解组份发生反应。等离子体与碳化硅反应，结果腐蚀碳化硅，同时分解组份与电极反应，而且，低溅射率的电极，避免了来自支持电极的溅射材料，和来自等离子体的不挥发组份，对靶的污染。
反应性离子腐蚀的一般技术为本领域内的技术人员所熟知，也可以发现和调整特殊技术，而无需过分实验。在本发明的优选实施方案中建立等离子体发生电位差的步骤包括在电极上加大约10-400W的功率。要特别说明的是，在这些实施方案中加在加电压的电极上的功率密度为大约0.04-2W/cm2。在最优选的实施方案中加在加电压的电极上的功率密度约为大约0.4-0.9W/cm2。
一般地，引入气体时的压力为大约5-5000毫乇(milltorr)，流速为大约1-500标准cm3/min(SCCM)，最优选的流速是大约50sccm。在一个最优选的实施方案中引入气体的步骤包括在大约100毫乇的压力下，引入在50sccm的三氟化氮中的大约10％氧化亚氮的气体混合物，电极的功率为大约100W，DC偏压为大约130V，并且在靶电极上采用石英涂层板。在这样的条件下，大约在9秒中开始除去材料持续时间为75分钟或更长，取决于要除去的材料的量。在这些条件下，典型的腐蚀要在大约3.7分钟内除去大约0.5μm，在这些条件下，75分钟类似的腐蚀将除去大约10μm。
最后，本发明的方法包括用化学气相沉积方法在经腐蚀的表面上沉积一层单晶碳化硅薄膜。在优选实施方案中这包括在一个a的碳化硅表面上，沉积一层或者6H(“a”)或者3C(“β”)碳化硅薄膜。
当要沉积的薄膜层是6H碳化硅时，本方法包括在一块6H碳化硅表面的平界面上沉积一层6H碳化硅薄膜，该平界面相对于基面，偏离轴倾斜大于1度，结果基本上是朝向<1120>方向中的一个。
当要沉积的薄膜是β碳化硅时，沉积薄膜的步骤包括在6H碳化硅表面的(0001)Si面上，按照[111]生长方向，外延沉积一层β碳化硅薄膜的(111)结晶学与6H碳化硅表面的(0001)结晶学相匹配，结果β碳化硅的(101)面与6H碳化硅的(1120)面相平行，β碳化硅的(111)面与6H碳化硅的(0001)面相平行。
在说明书中，已经公开了本发明典型的优选实施例，并且，尽管采用了专门术语，它们只用于一般的描述，并不是为了限制本发明。本发明的范围在下述权利要求书中提出。
Claims (18)
1.一种在碳化硅表面上外延生长一层单晶碳化硅薄膜的方法，该方法可降低所得到的薄膜中以及薄膜和碳化硅表面之间界面中的缺陷密度，该方法包括：
在一块单晶碳化硅晶体上形成一个基本是平面的表面；
将基本上是平面的表面暴露在腐蚀性等离子体中，直至任何因机械制备而引起的表面或表面下的损伤基本上被消除，但是持续时间不超过在表面中等离子体腐蚀本身发展新缺陷或者使现有缺陷恶化所需的时间，并且同时采用本身不会在表面中造成显著的缺陷的等离子体气体和电极系统；以及
用化学气相沉积方法在经腐蚀的表面上沉积一层单晶碳化硅薄膜。
2.如权利要求1的方法，所说的一块碳化硅晶体上形成一块基本上是平表面的步骤包括：
切开一块碳化硅晶体，露出一块一般的平表面；
用研磨膏研磨一般的平表面；以及
用研磨膏抛光一般的平面，以产生基本的平表面。
3.如权利要求1的方法，将基本的平表面暴露在腐蚀性等离子体中，持续时间不超过在表面中等离子体腐蚀本身发展新缺陷或者使现有缺陷恶化所需的时间，所说的步骤包括限制腐蚀深度为0.5-1μm。
4.按权利要求1的方法，所述的用化学气相沉积方法在经腐蚀的表面上沉积一层单晶碳化硅薄膜的步骤包括，在一块6H碳化硅表面的平界面上沉积一层6H碳化硅薄膜，该平界面相对于基面，偏离轴倾斜大于1度，结果基本上是朝向(1120)方向中的一个。
5.如权利要求1的方法，所说的用化学沉积方法在经腐蚀的表面上沉积一层单晶碳化硅薄膜的步骤包括，在6H碳化硅表面的(0001)Si面上，如(111)生长方向，外延沉积一层β碳化硅薄膜，结果β碳化硅薄膜的(111)结晶学与6H碳化硅表示的(0001)结晶学相匹配，结果β碳化硅的(101)面与6H碳化硅的(1120)面相平行，β碳化硅(111)面与6H碳化硅的(0001)面相平行。
6.如权利要求1的方法，将基本的平表面暴露在腐蚀性等离子体中，同时使用本身不会在表面中造成显著的缺陷的等离子气体和电极系统，所说的步骤包括：
在两个电极之间建立等离子体发生电位差；
通过在两个电极之间引入一种气体而产生等离子体，所说的气体易于在等离子体中基本上分解成为它的元素组份，并且所说的基本上所有的从气体中分解出来的组份是挥发性的，并且所说的至少一种分解的组份与碳化硅发生反应；
将基本上是平面的碳化硅表面作为靶固定在一个电极上，所说的电极用低溅射率的材料制成，所说的电极材料和可分解组份发生反应；以及
等离子体与碳化硅反应，结果腐蚀碳化硅，同时分解组份与电极反应，而且低溅射率的电极避免了来自支持电极的溅射材料，和来自等离子体的不挥发的分解组份对靶的污染。
7.如权利要求6的方法，所说的在两个电极之间通过引入一种气体，在两个电极之间产生等离子体的步骤包括，引入含氟气体和含氧气体的气体混合物，该混合物在等离子体中易于基本上分解为它的元素组份，并且所说的基本上所有的从气体混合物中分解出来的组份在等离子体中是挥发性的，并且所说的至少一种分解的组份与碳化硅发生反应，以及附加条件是，另一方面，剩下的所有组份都不干扰正在进行的腐蚀过程或者所制备的碳化硅表面。
8.如权利要求6的方法，所说的产生等离子体的步骤包括从三氟化氮形成反应性离子等离子体。
9.如权利要求8的方法，所说的产生反应性离子等离子体的步骤包括在等离子体上加直流偏压。
10.如权利要求6的方法，进一步包括在靶上加磁场的步骤，通过在碳化硅靶附近放置一块磁铁，来加强碳化硅靶在等离子体中的腐蚀速率。
11.如权利要求6的方法，所说的把碳化硅靶固定在一个电极上的步骤包括，将碳化硅靶固定在一个碳阴极或者一个石英阴极上。
12.如权利要求6的方法，所说的建立等离子体发生电位差的步骤包括，在电极上加10-400W的功率。
13.如权利要求6的方法，所说的建立等离子体发生电位差的步骤包括，在加电压的电极上的功率密度是0.04-2W/cm2。
14.如权利要求6的方法，所说的电极间引入气体的步骤包括，在5-5000毫乇下引入该气体。
15.如权利要求6的方法，所说的引入气体的步骤包括，在1-500标准cm3/分钟下引入该气体。
16.如权利要求6的方法，所说的引入气体的步骤包括，在100毫乇的压力下，在三氟化氮中引入10％氧化亚氨的气体混合物。
17.如权利要求6的方法，所说的产生等离子体的步骤包括产生一种反应性离子束等离子体。
18.如权利要求6的方法，所说的产生等离子体的步骤包括产生一种电子回旋共振等离子体。
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| US28A (en) * | 1836-09-20 | Drawing | ||
| US3078219A (en) * | 1958-11-03 | 1963-02-19 | Westinghouse Electric Corp | Surface treatment of silicon carbide |
| DE1242972B (de) * | 1964-03-06 | 1967-06-22 | Ibm Deutschland | Verfahren zum AEtzen von SiC |
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1989
- 1989-10-13 US US07/421,375 patent/US4946547A/en not_active Expired - Lifetime
-
1990
- 1990-08-02 MY MYPI90001297A patent/MY107059A/en unknown
- 1990-08-06 JP JP2511878A patent/JP2771697B2/ja not_active Expired - Lifetime
- 1990-08-06 CA CA002069309A patent/CA2069309C/en not_active Expired - Lifetime
- 1990-08-06 AU AU61806/90A patent/AU6180690A/en not_active Abandoned
- 1990-08-06 WO PCT/US1990/004398 patent/WO1991006116A1/en active IP Right Grant
- 1990-08-06 KR KR1019920700858A patent/KR0163411B1/ko not_active IP Right Cessation
- 1990-08-06 EP EP90912478A patent/EP0495787B1/en not_active Expired - Lifetime
- 1990-08-06 DE DE69013928T patent/DE69013928T2/de not_active Expired - Lifetime
- 1990-08-06 AT AT90912478T patent/ATE113758T1/de not_active IP Right Cessation
- 1990-10-11 MX MX022815A patent/MX173786B/es unknown
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1313867C (zh) * | 2002-09-17 | 2007-05-02 | 统宝光电股份有限公司 | 制造薄膜晶体管液晶显示器的绝缘薄膜的组合设备 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0495787B1 (en) | 1994-11-02 |
| ATE113758T1 (de) | 1994-11-15 |
| AU6180690A (en) | 1991-05-16 |
| JPH05500883A (ja) | 1993-02-18 |
| JP2771697B2 (ja) | 1998-07-02 |
| CN1050949A (zh) | 1991-04-24 |
| KR0163411B1 (ko) | 1999-02-01 |
| MX173786B (es) | 1994-03-28 |
| DE69013928D1 (de) | 1994-12-08 |
| MY107059A (en) | 1995-09-30 |
| WO1991006116A1 (en) | 1991-05-02 |
| DE69013928T2 (de) | 1995-03-30 |
| US4946547A (en) | 1990-08-07 |
| CA2069309C (en) | 2001-02-13 |
| EP0495787A1 (en) | 1992-07-29 |
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