A kind of method solving film separation
Technical field
The present invention relates to field of semiconductor manufacture, particularly a kind of method solving film separation.
Background technology
Tantalum oxide uses as anti-reflecting layer at backside illuminated image transducer, but it has the problem of peeling off, and to be considered between the oxide of tantalum and bottom heavily stressed causes for this problem, and this problem that comes off is in the urgent need to address.
Present stage, solution not relevant temporarily.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of method solving film separation and solves the problem.
The technical scheme that the present invention solves the problems of the technologies described above is as follows: a kind of method solving film separation, comprises the following steps:
Step one: in the upper surface deposit layer of oxide layer of wafer, described deposit refers to that the mode of being piled up by chemical reaction or physics is increased;
Step 2: at the upper surface deposit one floor height dielectric layer of described oxide layer, described high dielectric layer refers to the layer that the material that dielectric constant is higher is formed, such as: PECVD(plasma enhanced CVD) SiO
2dielectric constant be 4.1 ~ 4.3;
Step 3: pass through radio freqnency generator deposit one deck anti-reflecting layer at the upper surface of described high dielectric layer.
On the basis of technique scheme, the present invention can also do following improvement.
Further, described in deposit, the power of the radio freqnency generator of anti-reflecting layer use is 1000 ~ 2000W.
Further, described anti-reflecting layer is the oxide of tantalum.
The invention has the beneficial effects as follows: the power 4000 ~ 6000W of the radio freqnency generator that existing technique uses, due to RF(Radio Frequency: radio frequency) radio-frequency power and membrane stress show stronger correlation, present invention optimizes this technological parameter, power 4000 ~ the 6000W of the radio freqnency generator existing technique used is improved to 1000 ~ 2000W, decrease the interfacial stress between anti-reflecting layer and bottom, the problem can effectively avoiding film (anti-reflecting layer) to come off in reality is produced.
Accompanying drawing explanation
Fig. 1 is operational flowchart of the present invention;
Fig. 2 is structural representation of the present invention.
In accompanying drawing, the list of parts representated by each label is as follows:
1, wafer, 2, oxide layer, 3, high dielectric layer, 4, anti-reflecting layer.
Embodiment
Be described principle of the present invention and feature below in conjunction with accompanying drawing, example, only for explaining the present invention, is not intended to limit scope of the present invention.
As shown in Figure 1, a kind of method solving film separation, comprises the following steps:
Step 01: be structural representation of the present invention in the upper surface deposit layer of oxide layer 2, Fig. 2 of wafer 1, its structure is as shown in Figure 2;
Step 02: at the upper surface deposit one floor height dielectric layer 3 of described oxide layer 2, described high dielectric layer 3 refers to the layer that the higher material of dielectric constant is formed, such as: PECVD(plasma enhanced CVD) dielectric constant of SiO2 is 4.1 ~ 4.3;
Step 03: pass through radio freqnency generator deposit one deck anti-reflecting layer 4 at the upper surface of described high dielectric layer 3.
The power of the radio freqnency generator that anti-reflecting layer 4 described in deposit uses is 1000 ~ 2000W.
Described anti-reflecting layer is the oxide of tantalum, such as tantalum oxide.
Power 4000 ~ the 6000W of the radio freqnency generator that existing technique uses by the present invention is improved to 1000 ~ 2000W, decreases the interfacial stress between anti-reflecting layer and bottom, the problem can effectively avoiding film (anti-reflecting layer) to come off in reality is produced.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.