CN103498127A - Method for preparing W-Cr alloy layer on W surface by using dual ion beam coating technology - Google Patents
Method for preparing W-Cr alloy layer on W surface by using dual ion beam coating technology Download PDFInfo
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- CN103498127A CN103498127A CN201310232469.3A CN201310232469A CN103498127A CN 103498127 A CN103498127 A CN 103498127A CN 201310232469 A CN201310232469 A CN 201310232469A CN 103498127 A CN103498127 A CN 103498127A
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Abstract
The invention discloses a method for preparing a W-Cr alloy layer on a W surface by using dual ion beam coating technology. According to the invention, a thin Cr film is coated on a polished W-based surface by a dual Ar ion beam coating method; a W-Cr alloy layer is formed at the interface of W and Cr; the crystal grains of the alloy layer has a smaller grain size than W crystal grains, which greatly improves the crystal face structure of W crystals, prevents the formation of crystal boundary, and improves W surface properties. Very good prevention effects on the retention foaming behavior of H in W under H plasma irradiation and the formation of other irradiation damages are achieved. The schematic diagram is shown in Figure 1, and labels in the dual ion beam coating schematic diagram respectively correspond to the following titles: 1-auxiliary sputtering Ar ion source, 2-main sputtering Ar ion source, 3-Cr target material, 4-sample bench, 5-W substrate, 6-Ar ion sputtering source, and 7-vacuum chamber.
Description
Technical field
The present invention relates to research, the double ion coating technique of tokamak device first wall material and the method for making the W-Cr alloy layer, especially a kind of method of W-Cr alloy layer for preparing on the W surface with the double-ion beam plating method.
Background technology
At present, obtain the W-Cr alloy layer or adopt magnetron sputtering method, or adopt ion implantation.
Magnetron sputtering method, a kind of is to using substrate arbitrarily, as substrate, to using the W-Cr alloys target as sputtering target material, and another kind is to do substrate with the W base, and the Cr target is done target.This sputtering method has many weak points.First kind of way, the making homogeneity of alloy target, compactness requires very high, but because W-Cr alloying element consistency is not very strong, so the alloy homogeneity made is not generally fine.The sputtering source of magnetron sputtering is the Ar ion beam current, and energy is not very high, and the kinetic energy of the target atom of getting accordingly can be very not large yet, and like this, the rete obtained is low to the adhesion property of substrate, easily comes off, and is unfavorable for the formation of alloy layer, affects experiment effect.
Ion implantation, be injected into the Cr particle beam in the W base, and because the hardness of W is larger, density is higher, and the energy that injection method requires is higher, also just high many to the requirement of injection device, and heavy particle injection expense is high, and scientific research expenditure is had relatively high expectations.
Summary of the invention
The purpose of this invention is to provide a kind of method of W-Cr alloy layer for preparing on the W surface with the double-ion beam plating method, to eliminate shortcoming recited above.The rete that this method obtains and the bonding strength of substrate are large, and adhesion property is good, and the formation of alloy layer is arranged in the interface of film and substrate.
Another advantage of the present invention is that expense is low, simple to operate, only need be put into fixing position to substrate and target, has established parameter and time, just can complete.
The W-Cr alloy layer that the present invention makes, crystallite size is little, and intercrystalline, in conjunction with closely, has effectively stoped the formation of W surface crystal boundary, simultaneously, the delay foaming behavior of H in W under the H plasma radiation and the generation of other radiation damages is played to good interception.
The accompanying drawing explanation
Examples of the present invention will be described by way of reference to the accompanying drawings:
Fig. 1 is double-ion beam coating process schematic diagram, shows that W base Cr target forms the process of W-Cr alloy layer.The title that in schematic diagram, each label is corresponding is as follows:
1-assists sputter Ar ion source, 2-master's sputter Ar ion source, and the 3-Cr target,
The 4-sample table, the 5-W substrate, 6-Ar ion sputtering source,
The 7-vacuum chamber
Embodiment
Disclosed all features in this specification sheets, or the step in disclosed all methods or process, except mutually exclusive feature and/or step, all can combine by any way.
Disclosed arbitrary feature in this specification sheets (comprising any accessory claim, summary), unless special narration all can be replaced by other equivalences or the alternative features with similar purpose.That is,, unless special narration, each feature is an example in a series of equivalences or similar characteristics.
The present invention is not limited to aforesaid embodiment.The present invention expands to any new feature or any new combination disclosed in this manual, and the arbitrary new method disclosed or step or any new combination of process.
Claims (3)
1. apply the method for double-ion beam coating technique at W surface formation W-Cr alloy layer for one kind, comprise and using W as substrate, do target with Cr, adopt double-ion beam plated film mode, it is characterized in that: the method adopted is the double-ion beam plating method, and substrate used is the W bulk, and target used is the Cr target, double-ion beam is by sputtering source and auxiliary sputtering source, and two kinds of sputtering sources of double-ion beam are elements of the same race.
2. according to claim 1 in the surperficial method that forms the W-Cr alloy layer of W, it is characterized in that: forming W-Cr alloy layer material used is W base Cr target, on the W surface, forms this alloy.
3. according to claim 2 in the surperficial method that forms the W-Cr alloy layer of W, it is characterized in that: the method adopted is the double-ion beam plating method, and double-ion beam is by sputtering source and auxiliary sputtering source, and two kinds of sputtering sources of double-ion beam are elements of the same race.
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| CN201310232469.3A CN103498127B (en) | 2013-06-13 | 2013-06-13 | A kind of method applied double-ion beam coating technique and prepare W-Cr alloy layer in W surface |
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| CN201310232469.3A CN103498127B (en) | 2013-06-13 | 2013-06-13 | A kind of method applied double-ion beam coating technique and prepare W-Cr alloy layer in W surface |
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| CN103498127A true CN103498127A (en) | 2014-01-08 |
| CN103498127B CN103498127B (en) | 2015-08-26 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106932809A (en) * | 2015-12-30 | 2017-07-07 | 核工业西南物理研究院 | A kind of hot target structure of active water cold of many plate angle combining structures of W fonts |
| CN109913825A (en) * | 2019-03-25 | 2019-06-21 | 伯恩高新科技（惠州）有限公司 | A kind of PVD composite membrane layer preparation process of high vibration wear-resisting property |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030194616A1 (en) * | 2002-04-16 | 2003-10-16 | Carcia Peter Francis | Ion-beam deposition process for manufacture of binary photomask blanks |
| CN102534472A (en) * | 2012-01-10 | 2012-07-04 | 烟台睿创微纳技术有限公司 | Double ion beam reaction sputtering deposition equipment and method for preparing vanadium oxide film |
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2013
- 2013-06-13 CN CN201310232469.3A patent/CN103498127B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030194616A1 (en) * | 2002-04-16 | 2003-10-16 | Carcia Peter Francis | Ion-beam deposition process for manufacture of binary photomask blanks |
| CN102534472A (en) * | 2012-01-10 | 2012-07-04 | 烟台睿创微纳技术有限公司 | Double ion beam reaction sputtering deposition equipment and method for preparing vanadium oxide film |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106932809A (en) * | 2015-12-30 | 2017-07-07 | 核工业西南物理研究院 | A kind of hot target structure of active water cold of many plate angle combining structures of W fonts |
| CN109913825A (en) * | 2019-03-25 | 2019-06-21 | 伯恩高新科技（惠州）有限公司 | A kind of PVD composite membrane layer preparation process of high vibration wear-resisting property |
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| CN103498127B (en) | 2015-08-26 |
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