CN103617805A - Storage device, and method for manufacturing storage device through recycling storage chip - Google Patents
Storage device, and method for manufacturing storage device through recycling storage chip Download PDFInfo
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- CN103617805A CN103617805A CN201310661182.2A CN201310661182A CN103617805A CN 103617805 A CN103617805 A CN 103617805A CN 201310661182 A CN201310661182 A CN 201310661182A CN 103617805 A CN103617805 A CN 103617805A
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Abstract
The invention provides a method for manufacturing a storage device through recycling a storage chip. The method comprises the following steps of a circuit cutting step, namely, cutting and separating a second main control unit arranged on a second circuit board to remain a second storage unit and an external lead interface thereof; a chip welding step, namely, electrically connecting the second storage unit with a storage circuit interface remained on a first circuit board through the external lead interface, fixing the second storage unit on a storage unit region remained on the first circuit board; and a forming step, namely, processing the first circuit board fixed with the second storage unit into a complete storage device. The invention further discloses a corresponding storage device. According to the method, storage devices having defects caused by damage to a main control chip, inapplicability and the like can be recycled, thus the problem that a large quantity of storage chips are not completely used to cause waste is effectively solved, and the production cost can be greatly reduced.
Description
Technical field
The present invention relates to memory device field, relate in particular to the storage chip that a kind of employing utilizes again and manufacture the method for memory device and the memory device that adopts the method to make.
Background technology
Memory device is for storing the equipment as information, as various information such as word, picture, multimedias, normally will after information digitalization, be stored in order to the media of the modes such as electricity consumption, magnetic or optics again.Memory device as information carrier is the important component part of modern information technology.And in recent years, movable storage device has especially obtained development at full speed and application widely.As a kind of memory device that can move, more greatly facilitate data storage between different terminals.The kind of memory device is very many, with regard to movable storage device, common just just like USB flash disk, the black colloid of UDP(), TF card, EMMC card, SD card, M2 card etc.Although their outward appearances and purposes are different, its inner structure and function are basic identical.
Fig. 1 shows the structural representation of memory circuit plate of several typical memory devices of prior art.As shown in Figure 1, the inner structure of the memory device of prior art mainly consists of main control unit 20 and the storage unit 30 be located on PCB10, its each parts comprise circuit board, storage unit and main control unit, when manufacturing, all to adopt brand-new PCB and chip, because the main control chip of memory device is all that storage chip has general memory function for specific control function setting conventionally.Thereby, for the memory device of prior art, when there is the situation that function is no longer applicable or main control chip damages of main control chip, whole memory device is just directly discarded, and in this case, the storage chip that its function is intact also goes out of use simultaneously, caused waste significantly.
Summary of the invention
The invention provides a kind of method of manufacturing memory device by the utilization again of storage chip, the method can be utilized again to the memory device of reasons such as damaging because of main control chip or inapplicable, to the greatest extent it uses the problem with regard to having slatterned effectively to avoid a large amount of storage chip, and can greatly save production cost.
Further, the present invention also provides a kind of memory device, this memory device can be saved production cost greatly, and can again utilize the memory device of reasons such as damaging because of main control chip or inapplicable, and it uses the problem with regard to having slatterned to the greatest extent effectively to avoid a large amount of storage chip.
A method of manufacturing memory device by the utilization again of storage chip, is characterized in that, the method comprises the following steps:
Circuit cutting step, the second main control unit cutting and separating by being located on second circuit board, leaves the second storage unit and external wire interface thereof;
Chips welding step, is electrically connected to described the second storage unit by described external wire interface, and this second storage unit is fixed on to reserved memory cell region on described the first wiring board with memory circuit interface reserved on the first wiring board;
Forming step, is processed into complete memory device by the first circuit board that fixes described the second storage unit.
Preferably, in described chips welding step, after described the second storage unit being welded to by aluminum conductor on the circuit of described first circuit board, by a glue, cover described aluminum steel fixing.
Preferably, in described circuit cutting step, for the second storage unit and the second main control unit that are arranged in same plane, directly excision is provided with the second circuit plate portion of the second main control unit.
Or, in described circuit cutting step, for overlapping the second main control unit being arranged in above or below described the second storage unit, cut off after its external wire, the second main control unit is separated the second storage unit.
Preferably, before described chips welding step, also comprise:
First circuit board making step, on PCB, the needed circuit of etching memory device, produces first circuit board, and reserves and treat the region of fixing described the second storage unit and the interface being electrically connected to for the external wire interface with described the second storage unit.
Correspondingly, the invention also discloses a kind of memory device, include the first circuit board of being located in shell, this first circuit board is provided with the first main control unit and the first storage unit, described the first storage unit at least having excised the second remaining storage unit of the second main control unit from second circuit board, and this second storage unit is connected with the line electricity on described first circuit board by its external wire interface.
Preferably, described memory device is movable storage device.
Preferably, described memory device is USB flash disk, the black colloid of UDP(), TF card, EMMC card, SD card or M2 card.
Beneficial effect of the present invention is:
Embodiments of the invention are by damaging on the circuit board of memory device or after inapplicable main control unit Partial Resection falls, after being processed again, remaining storage unit is applied on new memory device, thereby realized the utilization again to the memory device of reasons such as damaging because of main control chip or inapplicable, effectively avoid a large amount of storage chip it use the problem with regard to having slatterned to the greatest extent, and greatly saved production cost.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, to the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skills, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is the board structure of circuit schematic diagram of several typical memory devices of prior art.
Fig. 2 is the inside Facad structure schematic diagram of memory device the first embodiment of the present invention.
Fig. 3 is the inside reverse side structural representation of memory device the first embodiment of the present invention.
Fig. 4 is the structural representation of the first storage unit in memory device the first embodiment of the present invention.
Fig. 5 is the inside reverse side structural representation of memory device the first embodiment of the present invention.
Fig. 6 is the structural representation of the first storage unit in memory device the second embodiment of the present invention.
Fig. 7 is the inside reverse side structural representation of memory device the second embodiment of the present invention.
Fig. 8 is the structural representation of the first storage unit in memory device of the present invention the 3rd embodiment.
Fig. 9 is the inside reverse side structural representation of memory device the second embodiment of the present invention.
Embodiment
An embodiment who describes the method for again utilizing manufacture memory device by storage chip provided by the invention below in conjunction with accompanying drawing 1-Fig. 5 in detail, the present embodiment realization once mainly comprises the following steps by the flow process of manufacturing memory device of again utilizing of storage chip:
In circuit cutting step, the second main control unit 20 cutting and separating by being located on second circuit board 10, leave the second storage unit 30 and external wire interface thereof;
In chips welding step, by described external wire interface, described the second storage unit 20 is electrically connected to memory circuit interface reserved on the first wiring board 1, and this second storage unit 30 is fixed on to reserved memory cell region on described the first wiring board 1;
In forming step, the first circuit board 1 that fixes described the second storage unit 30 is processed into complete memory device.
In addition, before described chips welding step, also comprise:
First circuit board making step, on PCB, the needed circuit of etching memory device, produces first circuit board 1, and reserves and wait to fix the region of the second storage unit 30 and the interface being electrically connected to for the external wire interface with the second storage unit 30.
During specific implementation, in described chips welding step, after can described the second storage unit 30 being welded to by aluminum conductor on the circuit of described first circuit board 1, by a glue, covering described aluminum steel and enter oven for solidifying moulding.
Further, in described circuit cutting step, the second storage unit 30 and the second main control unit 20 for being arranged in same plane, can directly excise the second circuit plate portion that is provided with the second main control unit.
Or, for overlapping the second main control unit 20 being arranged in above or below described the second storage unit 30, cut off after its external wire, the second main control unit 20 is separated the second storage unit 30.
Below with reference to Fig. 1-Fig. 5, describe the first embodiment of memory device provided by the invention in detail; As shown in the figure, the present embodiment mainly includes the first circuit board 1 of being located in shell (not shown), this first circuit board 1 is provided with the first main control unit 2, the first storage unit 3 and interface 4, described the first storage unit 3 at least having excised the second storage unit 30 that the second main control unit 20 is left from second circuit board 10, and this second storage unit 30 is connected with the line electricity on described first circuit board 1 by its external wire interface.
During specific implementation, can cut along 100 pairs of second circuit boards 10 of the line of cut shown in Fig. 1, thereby obtain the second storage unit 30.When the second main control unit 20 overlaps above or below the second storage unit 30, need to make its separation by the lead-in wire of the second main control unit 20 being chosen out to excision.
During specific implementation, the present embodiment can be movable storage device, as USB flash disk, the black colloid of UDP(), TF card, EMMC card, SD card or M2 card etc.Although the present embodiment has only been listed the schematic diagram of USB flash disk structure, other various memory devices are also compared with USB flash disk, only have the difference of profile and cloth line position, repeat no longer one by one.
Fig. 6-Fig. 7, Fig. 8-Fig. 9 show respectively storage unit and the inner structure of memory device the second embodiment provided by the invention, the 3rd embodiment, this second embodiment, the 3rd embodiment compare with aforementioned the first embodiment, difference be only the profile of the first storage unit 3 and bus-bar construction slightly variant, its function is all consistent with method for making, repeats no more.
Above content is in conjunction with concrete preferred implementation further description made for the present invention, can not assert that specific embodiment of the invention is confined to these explanations.For general technical staff of the technical field of the invention, without departing from the inventive concept of the premise, can also make some simple deduction or replace, all should be considered as belonging to protection scope of the present invention.
Claims (8)
1. by the utilization again of storage chip, manufacture a method for memory device, it is characterized in that, the method comprises the following steps:
Circuit cutting step, the second main control unit cutting and separating by being located on second circuit board, leaves the second storage unit and external wire interface thereof;
Chips welding step, is electrically connected to described the second storage unit by described external wire interface, and this second storage unit is fixed on to reserved memory cell region on described the first wiring board with memory circuit interface reserved on the first wiring board;
Forming step, is processed into complete memory device by the first circuit board that fixes described the second storage unit.
2. the method for claim 1, is characterized in that, in described chips welding step, after described the second storage unit being welded to by aluminum conductor on the circuit of described first circuit board, by a glue, covers described aluminum steel fixing.
3. method as claimed in claim 1 or 2, is characterized in that, in described circuit cutting step, for the second storage unit and the second main control unit that are arranged in same plane, directly excision is provided with the second circuit plate portion of the second main control unit.
4. method as claimed in claim 1 or 2, it is characterized in that, in described circuit cutting step, for overlapping the second main control unit being arranged in above or below described storage unit, cut off after its external wire, by the second main control unit from separated above or below the second storage unit.
5. the method for claim 1, is characterized in that, before described chips welding step, also comprises:
First circuit board making step, on PCB, the needed circuit of etching memory device, produces first circuit board, and reserves and wait to fix the region of the second storage unit and the interface being electrically connected to for the external wire interface with the second storage unit.
6. a memory device, include the first circuit board of being located in shell, this first circuit board is provided with the first main control unit and the first storage unit, it is characterized in that: described the first storage unit at least having excised the second remaining storage unit of the second main control unit from second circuit board, and this second storage unit is connected with the line electricity on described first circuit board by its external wire interface.
7. memory device as claimed in claim 6, is characterized in that, described memory device is movable storage device.
8. memory device as claimed in claim 7, is characterized in that, described memory device is USB flash disk, black colloid UDP, TF card, EMMC card, SD card or M2 card.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310661182.2A CN103617805A (en) | 2013-12-09 | 2013-12-09 | Storage device, and method for manufacturing storage device through recycling storage chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310661182.2A CN103617805A (en) | 2013-12-09 | 2013-12-09 | Storage device, and method for manufacturing storage device through recycling storage chip |
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| CN103617805A true CN103617805A (en) | 2014-03-05 |
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| CN201310661182.2A Pending CN103617805A (en) | 2013-12-09 | 2013-12-09 | Storage device, and method for manufacturing storage device through recycling storage chip |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6404688B2 (en) * | 2000-02-29 | 2002-06-11 | Fujitsu Limited | Semiconductor memory device having a self-refresh operation |
| US20070195582A1 (en) * | 2003-05-28 | 2007-08-23 | Hitachi, Ltd. | Semiconductor device |
| CN201004251Y (en) * | 2006-12-15 | 2008-01-09 | 方正科技集团股份有限公司 | Separable data storage tax control POS |
| CN202221657U (en) * | 2011-10-24 | 2012-05-16 | 深圳泰胜微科技有限公司 | Flash memory storage device based on USB (Universal Serial Bus) interface |
| CN102680882A (en) * | 2011-03-18 | 2012-09-19 | 株式会社理光 | Circuit board, image forming apparatus, and method of managing reuse information of circuit board |
| CN203760082U (en) * | 2013-12-09 | 2014-08-06 | 深圳市品凌科技有限公司 | Storage equipment |
-
2013
- 2013-12-09 CN CN201310661182.2A patent/CN103617805A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6404688B2 (en) * | 2000-02-29 | 2002-06-11 | Fujitsu Limited | Semiconductor memory device having a self-refresh operation |
| US20070195582A1 (en) * | 2003-05-28 | 2007-08-23 | Hitachi, Ltd. | Semiconductor device |
| CN201004251Y (en) * | 2006-12-15 | 2008-01-09 | 方正科技集团股份有限公司 | Separable data storage tax control POS |
| CN102680882A (en) * | 2011-03-18 | 2012-09-19 | 株式会社理光 | Circuit board, image forming apparatus, and method of managing reuse information of circuit board |
| CN202221657U (en) * | 2011-10-24 | 2012-05-16 | 深圳泰胜微科技有限公司 | Flash memory storage device based on USB (Universal Serial Bus) interface |
| CN203760082U (en) * | 2013-12-09 | 2014-08-06 | 深圳市品凌科技有限公司 | Storage equipment |
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Application publication date: 20140305 |
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