CN103676011B - Photoswitch and optical cross-connect - Google Patents
Photoswitch and optical cross-connect Download PDFInfo
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- CN103676011B CN103676011B CN201310699928.9A CN201310699928A CN103676011B CN 103676011 B CN103676011 B CN 103676011B CN 201310699928 A CN201310699928 A CN 201310699928A CN 103676011 B CN103676011 B CN 103676011B
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Abstract
The embodiment of the present invention provides a kind of photoswitch and optical cross-connect.Photoswitch of the present invention, comprising: at least one top electrode group of circuit control module, catoptron and opposing parallel setting and at least one bottom electrode group; Wherein, film is provided with between described top electrode group and described bottom electrode group; Whether whether described circuit control module is connected with described top electrode group and described bottom electrode group, charged for the one or more top electrodes controlled in described top electrode group, and charged for the one or more bottom electrodes controlled in described bottom electrode group.Photoswitch in the embodiment of the present invention changes the quantity of charged bottom electrode in the quantity of charged top electrode in top electrode group and bottom electrode group by circuit control module, make the Part III generation change in location of described film, thus achieve the switching of optical channel, and the optical switch construction of this enforcement is simple and control simple.
Description
Technical field
The embodiment of the present invention relates to the communication technology, particularly relates to a kind of photoswitch and optical cross-connect.
Background technology
Along with the continuous increase of light transmission capacity, Channel Exchange and the networking complexity of optical communication are more and more higher, photoswitch plays very important effect in optical-fiber network, and it not only constitutes the exchcange core of key equipment in wavelength division multiplexed network, is also the Primary Component in optical-fiber network.
In existing technology, micro-reflector and top electrode are linked together, by the stepless control to input voltage between upper/lower electrode, make top electrode drive micro-reflector to rotate, thus change emergent light angle, but prior art realizes optical channel switching by changing emergent light angle, cause the angle of the emergent light of diverse location different, need extra beam path alignment unit to carry out process angle, therefore, existing optical switching technique complex structure, and control complicated.
Summary of the invention
The embodiment of the present invention provides a kind of photoswitch and optical cross-connect, and described optical switch construction is simple, and controls simple to realize the switching of optical channel.
First aspect, the embodiment of the present invention provides a kind of photoswitch, comprising:
At least one top electrode group of circuit control module, catoptron and opposing parallel setting and at least one bottom electrode group, described top electrode group comprises multiple top electrode, and described bottom electrode group comprises multiple bottom electrode; Wherein, be provided with film between described top electrode group and described bottom electrode group, described catoptron is arranged at least one position in the upside of described top electrode group and the position, two, downside of described bottom electrode;
Described circuit control module is connected with described top electrode group and described bottom electrode group, whether the one or more top electrodes for controlling in described top electrode group are charged, and it is whether charged for the one or more bottom electrodes controlled in described bottom electrode group, when one or more top electrode is charged, charging zone in formation, when one or more bottom electrode is charged, form lower charging zone;
Described upper charging zone is for adsorbing the Part I of described film, described lower charging zone is for adsorbing the Part II of described film, the Part III between the Part I of described film and Part II is made to form inclined-plane, wherein, the Part III of described film is used for by reflected incident light to catoptron, and the electrode of light signal process in reflection process is transparency electrode;
Described catoptron, the reflected incident light come for being reflected by the Part III of described film is to optical channel;
Described circuit control module also for, change the quantity of charged bottom electrode in the quantity of charged top electrode in described top electrode group and described bottom electrode group, thus change the size of described upper charging zone and lower charging zone, make the Part III generation change in location of described film, thus make described incident light after the Part III of described film and the reflection of described catoptron, optical channel when described incident light enters described photoswitch can not be incident upon
In conjunction with first aspect, in the first possible implementation of first aspect, described circuit control module specifically for, control to increase charged top electrode number toward one of them direction in top electrode group, and reduce charged bottom electrode number toward described direction in bottom electrode group, the Part III of film is moved in parallel along described direction, thus make described incident light finally be incident upon another optical channel after the Part III and the reflection of described catoptron of described film, wherein, the charged top electrode number of the described increase bottom electrode number charged with described minimizing is identical.
In conjunction with the first possible implementation of first aspect or first aspect, in the implementation that the second of first aspect is possible, if described incident light is incident upon unsettled optical channel after the Part III and the reflection of described catoptron of described film, described photoswitch is closed.
In conjunction with first aspect, first aspect the first to any one possible implementation of the second, in the third possible implementation of first aspect, described photoswitch comprises at least two top electrode groups, comprise at least two bottom electrode groups accordingly, a film is provided with, the corresponding a kind of optical wavelength of every bar film between each top electrode group and each bottom electrode group; Wherein, each top electrode group comprises m independently top electrode, and each bottom electrode group correspondence comprises m independently bottom electrode, and wherein, m value is determined according to the number of described optical channel, and m is natural number;
Described photoswitch, also comprises: wavelength divides multiple unit and beam path alignment unit;
Described wavelength divides multiple unit, for each wavelength signals in the light signal of input is carried out space separation, obtains the light signal corresponding with each bar film; Receive the light signal of described beam path alignment unit transmission, and will the light signal entering same light passage be needed to synthesize a light signal;
Described beam path alignment unit, the transmission direction for the light signal of each wavelength of dividing multiple unit to be separated described wavelength is adjusted to parallel with bottom electrode group with top electrode group and aims at the Part III of film corresponding to described each wavelength; Receive the light signal of catoptron reflection, to needing the light signal travel direction polymerization entering same light passage, and the optical signal transmission after being polymerized in direction divides multiple unit to described wavelength.
In conjunction with the third possible implementation of first aspect, in the 4th kind of possible implementation of first aspect, one end of described film is fixed on one end of described top electrode group, the other end of described film is fixed on one end relative with the other end of described top electrode group in described bottom electrode group, accordingly, the number of optical channel described in described m=.
In conjunction with the third possible implementation of first aspect, in the 5th kind of possible implementation of first aspect, the two ends of described film are free end, and described photoswitch comprises 1 catoptron, then the number+2 of optical channel described in m=.
In conjunction with the third possible implementation of first aspect, in the 6th kind of possible implementation of first aspect, the two ends of described film are free end, and described photoswitch comprises 2 catoptrons, if the number of described optical channel is even number, then number/the 2+2 of optical channel described in m=; If the number of described optical channel is odd number, then m=(number+1 of described optical channel)/2+2.
Second aspect, the embodiment of the present invention provides a kind of optical cross-connect, comprising:
Photoswitch as described in implementation arbitrary in above-mentioned first aspect and tunable optic filter.
Photoswitch in the embodiment of the present invention changes the quantity of charged bottom electrode in the quantity of charged top electrode in top electrode group and bottom electrode group by circuit control module, make the Part III generation change in location of described film, thus make described incident light be incident upon other optical channel after the Part III and the reflection of described catoptron of described film, therefore, achieve the switching of optical channel, and the optical switch construction of this enforcement is simple and control simple.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the structural representation of photoswitch embodiment one of the present invention;
Fig. 2 is the structural representation of photoswitch embodiment two of the present invention;
Fig. 3 A is schematic diagram before the Part III translation of the 1st article of film;
Fig. 3 B is schematic diagram after the Part III translation of the 1st article of film;
Fig. 4 is the structural representation of optical cross-connect of the present invention.
Embodiment
For making the object of the embodiment of the present invention, technical scheme and advantage clearly, below in conjunction with the accompanying drawing in the embodiment of the present invention, technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
Fig. 1 is the structural representation of photoswitch embodiment one of the present invention, as shown in Figure 1, the photoswitch of the present embodiment comprises: at least one top electrode group 103 of circuit control module 101, catoptron 102 and opposing parallel setting and at least one bottom electrode group 104, described top electrode group comprises multiple top electrode, and described bottom electrode group comprises multiple bottom electrode; Wherein, be provided with film 105 between top electrode group 103 and bottom electrode group 104, catoptron 102 is arranged at least one position in the upside of top electrode group 103 and the position, two, downside of bottom electrode group 104; Alternatively, each top electrode group comprise multiple very independently electrodes (namely between each top electrode for separate) that power on, and multiple bottom electrodes of comprising of each bottom electrode group are independently electrode (being namely separate between each bottom electrode).
Wherein, circuit control module 101 is connected with top electrode group 103 and bottom electrode group 104, whether the one or more top electrodes for controlling in top electrode group 103 are charged, and it is whether charged for the one or more bottom electrodes controlled in described bottom electrode group 104, when one or more top electrode is charged, charging zone in formation, when one or more bottom electrode is charged, forms lower charging zone; Described upper charging zone is for adsorbing the Part I of described film 105, described lower charging zone is for adsorbing the Part II of described film 105, the Part III between the Part I of described film 105 and Part II is made to form inclined-plane, wherein, the Part III of described film is used for by reflected incident light to catoptron 102, and the electrode of light signal process in reflection process is transparency electrode.
In the present embodiment, whether circuit control module 101 is charged to change upper charging zone by the top electrode controlling top electrode group 103, whether charged to change lower charging zone with the bottom electrode by controlling bottom electrode group 104, due to the effect of electrostatic force, Part I corresponding with the upper charging zone of top electrode group 103 in film 105 can be attracted to the upper charging zone of top electrode group 103, in like manner, Part II corresponding with the lower charging zone of bottom electrode group 104 in film 105 can be attracted to the lower charging zone of bottom electrode group 104, wherein, on, the region do not powered in bottom electrode group does not just have the power of adsorbent thin film.Alternatively, the length of film 105 can be greater than the length of top electrode group 103 and/or bottom electrode group 104, and the length of upper charging zone can be less than the length of top electrode group 103 and/or bottom electrode group 104 with the length sum of time charging zone in bottom electrode group 104 in top electrode group 103, therefore, Part III between the Part I of film 105 and Part II forms inclined-plane, this inclined-plane by reflected incident light to catoptron 102, wherein, the electrode of light signal process in this reflection process is transparency electrode.
Further, the reflected incident light of catoptron 102 by the Part III reflection by described film 105 is to optical channel.
Further, described circuit control module 101 is also for changing the quantity (namely controlling bottom electrode number charged in described bottom electrode group 104) of charged bottom electrode in the quantity (namely controlling top electrode number charged in described top electrode group 103) of charged top electrode in described top electrode group 103 and described bottom electrode group 104, thus change the size of described upper charging zone and lower charging zone, make the Part III generation change in location of described film 105, thus make described incident light after the Part III and described catoptron 102 reflection of described film 105, optical channel when described incident light enters described photoswitch can not be incident upon, namely the object that optical channel switches is realized.
Realize simulation in existing optical switching technique to rotate, need the stepless control to input voltage between upper/lower electrode, and have the requirement of precision.And the photoswitch of the present embodiment changes the quantity of charged bottom electrode in the quantity of charged top electrode in top electrode group and bottom electrode group by circuit control module, namely the electrode zone of the photoswitch of the embodiment of the present invention achieves the disconnected digital state of non-general rule, is convenient to control.
Photoswitch in the embodiment of the present invention changes the quantity of charged bottom electrode in the quantity of charged top electrode in top electrode group and bottom electrode group by circuit control module, make the Part III generation change in location of described film, thus make described incident light be incident upon other optical channel after the Part III and the reflection of described catoptron of described film, therefore, achieve the switching of optical channel, and the optical switch construction of this enforcement is simple and control simple.
Further, described circuit control module 101 specifically for, control to increase charged top electrode number toward one of them direction in top electrode group 103, and reduce charged bottom electrode number toward described direction in bottom electrode group 104, the Part III of film 105 is moved in parallel along described direction, thus make described incident light finally be incident upon another optical channel after the Part III and described catoptron 102 reflection of described film 105, wherein, the top electrode number that described increase the is charged bottom electrode number charged with described minimizing is identical.
In the present embodiment, circuit control module 101 can will enter the upper charging zone of demand modeling top electrode 103 groups of which passage and the change of the lower charging zone of bottom electrode group 104 according to incident light, as controlled to increase charged top electrode number toward one of them direction in top electrode group 103, also charged bottom electrode number is reduced toward described direction accordingly in bottom electrode group 104, and the charged top electrode number of the described increase bottom electrode number charged with described minimizing is identical, then film 105 is adsorbed in the Part I length increase of top electrode group 103, accordingly, the Part II length that film 105 is adsorbed in bottom electrode group 104 reduces (length that Part I increases is identical with the length that Part II reduces), then the Part III of film 105 moves in parallel along described direction, therefore, the position of reflected incident light to catoptron is moved up the vertical of this catoptron 102, thus catoptron 102 by the reflected incident light reflected by this Part III to another optical channel corresponding (optical channel when namely non-incident light enters described photoswitch).Alternatively, described direction can be described incident light incident direction and with at least one direction in the reverse direction of the incident direction of described incident light.Wherein, in the present embodiment, moved in parallel by the Part III of film 105, do not change the shooting angle of the light signal after the Part III reflection of film 105, achieve the function that optical channel switches.
Alternatively, circuit control module 101 can also will enter the upper charging zone of demand modeling top electrode 103 groups of which passage and the change of the lower charging zone of bottom electrode group 104 according to incident light, as controlled to reduce charged top electrode number toward one of them direction in top electrode group 103, also charged bottom electrode number is increased toward described direction accordingly in bottom electrode group 104, and the charged top electrode number of the described minimizing bottom electrode number charged with described increase is identical, then film 105 is adsorbed in the Part I length minimizing of top electrode group 103, accordingly, the Part II length that film 105 is adsorbed in bottom electrode group 104 increases (length that Part I reduces is identical with the length that Part II increases), then the Part III of film 105 moves in parallel along described direction, therefore, the position of reflected incident light to catoptron is moved down the vertical of this catoptron 102, thus catoptron 102 by the reflected incident light reflected by this Part III to other optical channel corresponding (optical channel when namely non-incident light enters described photoswitch).Alternatively, described direction can be at least one direction in the reverse direction of the incident direction of described incident light and the incident direction of described incident light.
Further, the two ends of film can be free end, or one end of film can be fixed on one end of top electrode group 103, and the other end of film can be fixed on one end relative with the other end of top electrode group 103 in bottom electrode group 104; If the two ends of film are free end, can also comprise 2 or 3 or 4 catoptrons in photoswitch, accordingly, the reflection direction of film can be upwards, also can be downward, or also can in a photoswitch partly upwards, and part downwards.
Further, if described incident light is incident upon unsettled optical channel after the Part III and the reflection of described catoptron of described film, described photoswitch is closed.
Photoswitch in the embodiment of the present invention controls to increase toward a direction in charged top electrode number and bottom electrode group in top electrode group to reduce charged bottom electrode number toward described direction by circuit control module, and the charged top electrode number of the described increase bottom electrode number charged with described minimizing is identical, the Part III of described film is moved in parallel along described direction, thus achieve the switching of optical channel, and the optical switch construction of this enforcement is simple and control simple.
Fig. 2 is the structural representation of photoswitch embodiment two of the present invention, as shown in Figure 2, in the present embodiment, photoswitch comprises at least two top electrode groups 103, comprise at least two bottom electrode groups 104 accordingly, a film is provided with, the corresponding a kind of optical wavelength of every bar film between each top electrode group and each bottom electrode group; Wherein, each top electrode group comprises m independently top electrode, and each bottom electrode group correspondence comprises m independently bottom electrode, and wherein, m value is determined according to the number of described optical channel, and m is natural number;
This photoswitch, can also comprise: wavelength divides multiple unit 106 and beam path alignment unit 107;
Wavelength divides multiple unit 106, for each wavelength signals in the light signal of input is carried out space separation, obtains the light signal corresponding with each bar film; The light signal that receiving light path collimation unit 107 transmits, and will the light signal entering same light passage be needed to synthesize a light signal;
Beam path alignment unit 107, the transmission direction of the light signal of each wavelength be separated for wavelength being divided multiple unit 106 is adjusted to parallel with bottom electrode group 104 with top electrode group 103 and aims at the Part III of film 105 corresponding to described each wavelength; Receive the light signal that catoptron 102 reflects, to needing the light signal travel direction polymerization entering same light passage, and the optical signal transmission after being polymerized in direction divides multiple unit 106 to wavelength.
Photoswitch in the present embodiment is wavelength-selective switches, this pass switch comprises at least two top electrode groups 103, and comprise at least two bottom electrode groups 104 accordingly, each top electrode group and and the bottom electrode group that is oppositely arranged of this top electrode group between be provided with a film, the corresponding a kind of optical wavelength of every bar film.Wherein, the quantity of top electrode group 103 or bottom electrode group 104 or film 105 is to the maximum number that should comprise different wave length in the light signal that goes for of photoswitch, as in a photoswitch, the quantity of top electrode group or bottom electrode group or film equals 10,10 kinds of wavelength are comprised at most in the light signal that then this photoswitch goes for, or in light signal, comprising 10 wavelength, then in the photoswitch selected, the quantity of top electrode group or bottom electrode group or film should be more than or equal to 10.Further, the light signal of the corresponding a kind of wavelength of every bar film, namely photoswitch can only be applicable to the light signal of each wavelength corresponding with each film in this photoswitch.
In the present embodiment, because the energy distribution of the light signal inciding the different wave length of the Part III of every bar film meets Gaussian distribution in y direction, in order to reduce y to crosstalk, every bar film y direction width arranges according to the spot size of the light signal of the Part III inciding this film, namely ensure that the energy inciding the light signal of this film can not be leaked on the film tape adjacent with this film, alternatively, the energy leakage ensureing to incide the light signal of this film is less than the per mille of the energy of the light signal inciding this film to the energy on the film tape adjacent with this film.
In the present embodiment, the light signal of input divides multiple unit 106 through wavelength, and this wavelength divides multiple unit 106 that each wavelength signals in the light signal of this input is carried out space separation; The light signal of each wavelength separated enters beam path alignment unit 107, the transmission direction of those light signals is adjusted to parallel with bottom electrode group 104 with top electrode group 103 and aims at the Part III of film 105 corresponding to described each wavelength by this beam path alignment unit 107, and namely the hot spot of each wavelength is fallen on different films respectively; The Part III of the film of the light signal process correspondence of each wavelength is reflected onto the diverse location of catoptron 102; Catoptron by the reflected incident light of each wavelength that reflected by this Part III to the diverse location of beam path alignment unit 107; This beam path alignment unit 107 carries out horizontal direction polymerization to needing the light signal of the different wave length entering same light passage, namely the light signal of different wave length on same level position is carried out horizontal direction polymerization by beam path alignment unit, and the optical signal transmission after being polymerized in direction divides multiple unit 106 to wavelength; Wavelength divides multiple unit 106 to synthesize a light signal by needing the light signal entering same light passage.
Alternatively, in this enforcement, wavelength divides multiple unit 106 to adopt grating, and as crystal grating or waveguide optical grating, wherein this grating can be transmission-type or reflective, and beam path alignment unit 107 can adopt lens pillar particularly.Further, the present embodiment, only for the structure in Fig. 2, does not divide the position of multiple unit, beam path alignment unit and catoptron and number to limit to wavelength, can select suitable position and number according to embody rule.
Further, circuit control module 101, specifically for will enter which passage according to the light signal of different wave length in incident light demand modeling described in bottom electrode number charged in charged top electrode number and each bottom electrode group in each top electrode group, as controlled to increase charged top electrode number toward one of them direction in each top electrode group 103, also charged bottom electrode number is reduced toward described direction accordingly in each bottom electrode group 104, and in each top electrode group, increase that to reduce charged bottom electrode number in the charged top electrode number bottom electrode group corresponding with described top electrode identical, the Part I length that then each film 105 is adsorbed in each the top electrode group 103 corresponding with described film 105 increases, accordingly, the Part II length that each film 105 is adsorbed in the bottom electrode group 104 corresponding with described film 105 reduces (length that Part I increases is identical with the length that Part II reduces), then the Part III of each film 105 moves in parallel along described direction, wherein, described direction can for entering the incident direction of the Part III of film 105 corresponding to described each wavelength respectively through the light signal of each wavelength of described beam path alignment unit 107.
Fig. 3 A is schematic diagram before the Part III translation of the 1st article of film, and Fig. 3 B is schematic diagram after the Part III translation of the 1st article of film.As shown in Figure 3A, m equals 8, article 1, film is corresponding top electrode group a hold 3 independently top electrode powers on, and bottom electrode group b corresponding to the 1st article of film hold 4 independently bottom electrode power on, in the top electrode group corresponding with the 1st article of film and bottom electrode group other independently electrode do not power on; Shown in Fig. 3 B, m equals 8, article 1, film is corresponding top electrode group a hold 4 independently top electrode powers on, and bottom electrode group b corresponding to the 1st article of film hold 3 independently bottom electrode power on, in the top electrode group corresponding with the 1st article of film and bottom electrode group other independently electrode do not power on; Then the Part III of film moves in parallel along the incident direction of described incident light, thus the position light signal of the wavelength corresponding with this film being reflexed to catoptron moves up the vertical of this catoptron 102, accordingly, the position reflexing to beam path alignment unit through this catoptron 102 also moves up the vertical of this beam path alignment unit, accordingly, after beam path alignment unit, divide the vertical of multiple unit to move up at wavelength, thus enter corresponding optical channel, namely achieve the switching of optical channel.Wherein, different optical channels can be arranged on the differing heights on same vertical direction, and namely beam path alignment unit and wavelength divide the same level position of multiple unit can corresponding same optical channel.Preferably, every bar film tape moves in parallel an electrode, and accordingly, the Exit positions of light signal changes to an optical channel adjacent with this optical channel from an optical channel.
Preferably, because the energy distribution inciding the light signal of beam path alignment part meets Gaussian distribution in z direction, in order to reduce z to crosstalk, the x of each independently electrode must ensure to move in parallel an electrode when every bar film tape to length, accordingly, the Exit positions of light signal changes to an optical channel adjacent with this optical channel from an optical channel, and can not from other non-targeted passage outgoing.
In the present embodiment, m value is determined according to the number of optical channel, the first implementation alternatively, one end of film is fixed on one end of top electrode group 103, the other end of this film is fixed on one end relative with the other end of top electrode group 103 in bottom electrode group 104, namely the Part III of film can move in parallel m time, namely can realize switching m optical channel, accordingly, the number of m=optical channel, wherein, catoptron 102 is arranged on the upside of top electrode group 103 or the downside of bottom electrode group 4, and the electrode adjacent with catoptron 102 is transparency electrode, so that light signal enters catoptron 102 after the Part III reflection of film.
The second implementation alternatively, the two ends of film are free end, and this photoswitch comprises 1 catoptron, namely ensure that the first end at film is fixed on the first end of top electrode group 103 by the mode of powering on, second end of this film is fixed on the prerequisite of first end relative with the second end of top electrode group 103 in bottom electrode group 104 by the mode of powering under, the Part III of film can move in parallel m-2 time, namely can realize switching m-2 optical channel, accordingly, then the number+2 of m=optical channel.
The third implementation alternatively, the two ends of film are free end, and this photoswitch comprises 2 catoptrons, namely ensure to be fixed on one end of top electrode group 103 in one end of film by the mode of powering on, the other end of this film is fixed on the prerequisite of one end relative with the other end of top electrode group 103 in bottom electrode group 104 by the mode of powering under, the Part III of film can move in parallel 2*(m-2) secondary, namely can realize switching 2*(m-2) individual optical channel, accordingly, if the number of optical channel is even number, then number/the 2+2 of optical channel described in m=; If the number of optical channel is odd number, then m=(number+1 of described optical channel)/2+2, wherein, the reflection direction of film can be upwards, also can be downward, or also can in a photoswitch partly upwards, and part is downward, multidimensional outgoing.
The present embodiment, photoswitch divides multiple unit and beam path alignment part to carry out space separation to wavelength signals each in the light signal of incidence by wavelength, further, bottom electrode number charged in top electrode number charged in each top electrode group and each bottom electrode group is controlled by circuit control module, to make the Part III of film move in parallel, thus the object that the optical channel achieving different wave length switches, and the optical switch construction of this enforcement is simple, control simple, and crosstalk is little.
Fig. 4 is the structural representation of optical cross-connect of the present invention, as shown in Figure 4, in the present embodiment, optical cross-connect 40 comprises: photoswitch 400 and tunable optic filter 401, wherein, photoswitch 400 can adopt the structure of photoswitch embodiment one and embodiment two, it realizes principle and technique effect is similar, repeats no more herein.
Last it is noted that above each embodiment is only in order to illustrate technical scheme of the present invention, be not intended to limit; Although with reference to foregoing embodiments to invention has been detailed description, those of ordinary skill in the art is to be understood that: it still can be modified to the technical scheme described in foregoing embodiments, or carries out equivalent replacement to wherein some or all of technical characteristic; And these amendments or replacement, do not make the essence of appropriate technical solution depart from the scope of various embodiments of the present invention technical scheme.
Claims (8)
1. a photoswitch, is characterized in that, comprising: at least one top electrode group of circuit control module, catoptron and opposing parallel setting and at least one bottom electrode group, and described top electrode group comprises multiple top electrode, and described bottom electrode group comprises multiple bottom electrode; Wherein, be provided with film between described top electrode group and described bottom electrode group, described catoptron is arranged at least one position in the upside of described top electrode group and the position, two, downside of described bottom electrode;
Described circuit control module is connected with described top electrode group and described bottom electrode group, whether the one or more top electrodes for controlling in described top electrode group are charged, and it is whether charged for the one or more bottom electrodes controlled in described bottom electrode group, when one or more top electrode is charged, charging zone in formation, when one or more bottom electrode is charged, form lower charging zone;
Described upper charging zone is for adsorbing the Part I of described film, described lower charging zone is for adsorbing the Part II of described film, the Part III between the Part I of described film and Part II is made to form inclined-plane, wherein, the Part III of described film is used for by reflected incident light to catoptron, and the electrode of light signal process in reflection process is transparency electrode;
Described catoptron, the reflected incident light come for being reflected by the Part III of described film is to optical channel;
Described circuit control module also for, change the quantity of charged bottom electrode in the quantity of charged top electrode in described top electrode group and described bottom electrode group, thus change the size of described upper charging zone and lower charging zone, make the Part III generation change in location of described film, thus make described incident light after the Part III of described film and the reflection of described catoptron, optical channel when described incident light enters described photoswitch can not be incident upon.
2. photoswitch according to claim 1, described circuit control module specifically for, control to increase charged top electrode number toward one of them direction in top electrode group, and reduce charged bottom electrode number toward described direction in bottom electrode group, the Part III of film is moved in parallel along described direction, thus make described incident light finally be incident upon another optical channel after the Part III and the reflection of described catoptron of described film, wherein, the top electrode number that described increase the is charged bottom electrode number charged with described minimizing is identical.
3. photoswitch according to claim 1 and 2, is characterized in that, if described incident light is incident upon unsettled optical channel after the Part III and the reflection of described catoptron of described film, described photoswitch is closed.
4. photoswitch according to claim 1 and 2, is characterized in that, comprises at least two top electrode groups, comprises at least two bottom electrode groups accordingly, is provided with a film between each top electrode group and each bottom electrode group, the corresponding a kind of optical wavelength of every bar film; Wherein, each top electrode group comprises m independently top electrode, and each bottom electrode group correspondence comprises m independently bottom electrode, and wherein, m value is determined according to the number of described optical channel, and m is natural number;
Described photoswitch, also comprises: wavelength divides multiple unit and beam path alignment unit;
Described wavelength divides multiple unit, for each wavelength signals in the light signal of input is carried out space separation, obtains the light signal corresponding with each bar film; Receive the light signal of described beam path alignment unit transmission, and will the light signal entering same light passage be needed to synthesize a light signal;
Described beam path alignment unit, the transmission direction for the light signal of each wavelength of dividing multiple unit to be separated described wavelength is adjusted to parallel with bottom electrode group with top electrode group and aims at the Part III of film corresponding to described each wavelength; Receive the light signal of catoptron reflection, to needing the light signal travel direction polymerization entering same light passage, and the optical signal transmission after being polymerized in direction divides multiple unit to described wavelength.
5. photoswitch according to claim 4, it is characterized in that, one end of described film is fixed on one end of described top electrode group, and the other end of described film is fixed on one end relative with the other end of described top electrode group in described bottom electrode group, accordingly, the number of optical channel described in described m=.
6. photoswitch according to claim 4, is characterized in that, the two ends of described film are free end, and described photoswitch comprises 1 catoptron, then the number+2 of optical channel described in m=.
7. photoswitch according to claim 4, is characterized in that, the two ends of described film are free end, and described photoswitch comprises 2 catoptrons, if the number of described optical channel is even number, then and the number/2+2 of optical channel described in m=; If the number of described optical channel is odd number, then m=(number+1 of described optical channel)/2+2.
8. an optical cross-connect, is characterized in that, comprising:
Photoswitch according to any one of claim 1 ~ 7 and tunable optic filter.
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| CN201310699928.9A CN103676011B (en) | 2013-12-18 | 2013-12-18 | Photoswitch and optical cross-connect |
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| CN201310699928.9A CN103676011B (en) | 2013-12-18 | 2013-12-18 | Photoswitch and optical cross-connect |
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| CN103676011B true CN103676011B (en) | 2015-11-25 |
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| CN201310699928.9A Active CN103676011B (en) | 2013-12-18 | 2013-12-18 | Photoswitch and optical cross-connect |
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| US6463191B1 (en) * | 1999-08-13 | 2002-10-08 | Hitachi, Ltd. | Optical switching device and optical switching method |
| CN2649568Y (en) * | 2003-09-12 | 2004-10-20 | 清华大学 | MEMS photoswitch |
| CN1542480A (en) * | 2003-07-03 | 2004-11-03 | 中国科学院长春光学精密机械与物理研 | Latch of micro machinery optical switch and fabrication thereof |
| CN1743884A (en) * | 2004-09-02 | 2006-03-08 | 冲电气工业株式会社 | Optical switch |
| CN202873007U (en) * | 2012-09-12 | 2013-04-10 | 天津新云网络技术有限公司 | Optical transmission device with selectivity |
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| US6925218B2 (en) * | 2000-05-26 | 2005-08-02 | Vitesse Semiconductor Corporation | Control techniques and devices for an optical switch array |
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| US6463191B1 (en) * | 1999-08-13 | 2002-10-08 | Hitachi, Ltd. | Optical switching device and optical switching method |
| CN1542480A (en) * | 2003-07-03 | 2004-11-03 | 中国科学院长春光学精密机械与物理研 | Latch of micro machinery optical switch and fabrication thereof |
| CN2649568Y (en) * | 2003-09-12 | 2004-10-20 | 清华大学 | MEMS photoswitch |
| CN1743884A (en) * | 2004-09-02 | 2006-03-08 | 冲电气工业株式会社 | Optical switch |
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