CN103700583A - Manufacturing method of T-shaped gate of GaN-based FET (Field Effect Transistor) - Google Patents
Manufacturing method of T-shaped gate of GaN-based FET (Field Effect Transistor) Download PDFInfo
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 24
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
Abstract
The invention discloses a manufacturing method of a T-shaped gate of a GaN-based FET (Field Effect Transistor). The manufacturing method comprises the steps of coating an electron beam photoresist on the surface of a substrate; carrying out exposure and development on the electron beam photoresist, and forming an etching window; etching the substrate from the formed etching window, and forming a fine gate graph of the T-shaped gate; evaporating a metal thin layer, and then secondly coating the electron beam photoresist; carrying out electron beam exposure and development on the electron beam photoresist which is secondly coated, removing the metal thin layer, and forming a T-shaped gate graph; evaporating deposited gate metal on the electron beam photoresist which is secondly coated and the T-shaped gate graph, stripping the electron beam photoresist which is secondly coated and the gate metal on the electron beam photoresist which is secondly coated, and forming the T-shaped gate. By utilizing the manufacturing method disclosed by the invention, the current collapse is effectively restrained, the stray capacitances of a gate source and a gate drain are reduced, the gate resistance of a device is reduced, the cut-off frequency (ft) and the maximum oscillation frequency (fmax) of the device are increased, and thus the device can work in an MMW (Millimeter Wave) frequency band.
Description
Technical field
The present invention relates to the structure-design technique field of high electron mobility field-effect transistor (HEMT), relate in particular to a kind of manufacture method of T-shaped grid of the gallium nitride-based field effect transistor that is applicable to millimeter wave.
Background technology
Millimere-wave band power amplifier has huge application prospect in military, commercialization and consumer field.High-frequency wideband wireless communication technology, precision guided weapon, long-range radar and space communication technology, working frequency range from C, X-band gradually to the more high band development such as Ku, Ka.
As third generation semi-conducting material, GaN material energy gap is wide, breakdown electric field is high, power output is large, and owing under high pressure working, conducting resistance is little, and GaN device also shows higher gain.Meanwhile, GaN device has very high electron mobility and electron saturation velocities, has guaranteed that this device is in Ka, the Q high-gain of W wave band even.Therefore, GaN HEMT technology has become the focus of current millimeter wave high power device area research.
Current, GaN microwave power tube core adopts Γ grid structure conventionally, in order to suppress its current collapse effect, conventionally adopts passivation technology, the SiN medium of growing on epitaxial loayer between leak in source.Meanwhile, in order to improve grid-control ability and the power linear degree of device, adopted Γ grid structure: SiN medium, GaN cap layer and part AlGaN epitaxial loayer are carried out to etching, and as the grid foot section of gate device, the wide grid cover of photoetching simultaneously forms Γ grid structure jointly.The effect of wide grid cover is: reduces gate resistance, plays the effect of grid field plate simultaneously, and intensity grid electric leakage field, the puncture voltage of increase device, to improve the operating voltage of device.
Adopt the GaN microwave power tube core of this structure to obtain good power out-put characteristic at Ku wave band and below Ku wave band, still, because the parasitic capacitance producing between grid and medium has caused grid source electric capacity (C
gs) and gate leakage capacitance (C
gd) increase, affected the frequency performance of device, cause device to be difficult at Ka wave band and with super band work.
At Ka wave band and with super band, in order to reduce grid source, grid leak parasitic capacitance, grid structure adopts T-shaped grid structure, when reducing grid length, and grid cover discord epitaxial loayer or dielectric layer contact, because dielectric constant of air is low, can greatly improve the frequency characteristic of device, still, traditional T-shaped grid structure is because surface does not have passivation or passivation completely, can cause the generation of current collapse under High-Field, affect the high frequency power characteristic of device.
Therefore in conjunction with Γ grid structure and T-shaped grid structure, be effectively, the emphasis of GaN field-effect transistor structure design and processes exploitation.
Summary of the invention
(1) technical problem that will solve
In view of this, main purpose of the present invention is to provide a kind of manufacture method of T-shaped grid of the gallium nitride-based field effect transistor that is applicable to millimeter wave, to reduce gate resistance and grid source, grid leak parasitic capacitance, improve device frequency characteristic, and make the complete passivation of device surface, the power characteristic that improves device, makes device can work in millimeter wave frequency band.
(2) technical scheme
For achieving the above object, the invention provides a kind of manufacture method of T-shaped grid of gallium nitride-based field effect transistor, it is characterized in that, comprising: at substrate surface coating electron beam resist; Electron beam resist is exposed and developed, form etching window; From the etching window forming, substrate is carried out to etching, form the thin gate figure of T-shaped grid; Evaporated metal thin layer, then second coat electron beam resist; The electron beam resist of second coat is carried out to electron beam exposure and development, remove thin metal layer, form T-shaped gate figure; And on the electron beam resist of second coat and T-shaped gate figure evaporation deposition grid metal, peel off second coat electron beam resist and on grid metal, form T-shaped grid.
In such scheme, described in the step of substrate surface coating electron beam resist, be that thickness is 2000 dusts at the even ZEP520 electron beam resist of substrate surface, and adopt 180 ℃ of hot plate heating in vacuum 3 minutes.Described substrate comprises AlGaN layer, GaN layer and SiN dielectric layer from the bottom to top successively.
In such scheme, described electron beam resist is exposed and is developed form in the step of etching window, be to adopt electron beam exposure technique to realize, dosage is 300 μ C/cm
2, electric current is 200pA, energy is 100kV; Wherein this etching window is in order to form the thin gate figure of T-shaped grid, and the width of thin grid line bar is 0.1 μ m, and developer solution ZED-N50 develops 90 seconds, fixing solution ZMD-D photographic fixing 15 seconds, and dry up with nitrogen.
In such scheme, the etching gas that described ICP etching technics adopts is SF
6and CHF
3mist, ratio is SF
6: CHF
3=3: 40, etch period is 90 seconds, and radio-frequency power (RF) is 20W, and direct current power (LF) is 250W, etching pressure (WP) 0.5Pa.
7, the manufacture method of the T-shaped grid of gallium nitride-based field effect transistor according to claim 1, it is characterized in that, then described evaporated metal thin layer in the step of second coat electron beam resist, is evaporated metal Al thin layer, thickness is 100 dusts, in order to as separator; Then second coat electron beam resist, this electron beam resist is UVIII electron beam resist, thickness is 1 μ m, and adopts 130 ℃ of hot plate heating in vacuum 1 minute.
In such scheme, described the electron beam resist of second coat is carried out to electron beam exposure and development, remove thin metal layer, form in the step of T-shaped gate figure, be that the electron beam resist of second coat is carried out to electron beam exposure and development, it is 100 μ C/cm that exposure adopts dosage
2, electric current is 200pA, energy is 100kV; After exposure, with 120 ℃ of hot plate vacuum back-flows drying glue 4 minutes, then with developer solution CD26, develop 60 seconds, remove metal Al thin layer, and with deionized water rinsing, nitrogen dries up, and forms T-shaped gate figure, wherein, the grid cover width of T-shaped grid is 0.5 μ m, and the thin grid width of T-shaped grid is 0.1 μ m.
In such scheme, evaporation deposition grid metal on the described electron beam resist in second coat and T-shaped gate figure, peel off second coat electron beam resist and on grid metal, form in the step of T-shaped grid, grid metal component is Ni/Au, and thickness is respectively Ni=400 dust, Au=5000 dust.
(3) beneficial effect
From technique scheme, can find out, the present invention has following beneficial effect:
1, utilize T-shaped grid preparation method of the present invention, because grid pin is all filled grid groove, and the not direct contact medium passivation layer of T-shaped grid grid cover, so not only can effectively reduce gate resistance and grid source, grid leak parasitic capacitance, improve device frequency characteristic, can also make the complete passivation of device surface, improve the power characteristic of device, finally realize the gallium nitride-based field effect transistor that high-performance is applicable to millimeter wave.
2, utilize the present invention, once electron beam exposure adopts ZEP520A, by electron beam exposure and ICP etching, and can be by grid foot control in 100nm.
3, utilize the present invention, owing to adopting concave grid groove and the device architecture that T-shaped grid combine, improved the grid-control ability of device, increased the mutual conductance of device.
4, utilize the present invention, because grid cover is not direct and SiN medium contact, obviously reduced grid source capacitor C gs, gate leakage capacitance Cgd.
5, utilize the present invention, owing to adopting T-shaped grid structure, reduced the gate resistance of device, obviously improved the frequency characteristic of device.
6, utilize the present invention, because device surface is by passivation completely, suppressed current collapse effect, obviously improved the power characteristic of device, device can be applicable to millimeter wave frequency band.
Accompanying drawing explanation
Fig. 1 is the method flow diagram of the T-shaped grid of making gallium nitride-based field effect transistor provided by the invention;
Fig. 2 a to Fig. 2 g is the process chart according to the T-shaped grid of the making gallium nitride-based field effect transistor of the embodiment of the present invention;
Fig. 3 is the generalized section according to the T-shaped grid of the making gallium nitride-based field effect transistor of the embodiment of the present invention.
Embodiment
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
The invention provides a kind of manufacture method of T-shaped grid of gallium nitride-based field effect transistor, use ZEP520 electron beam resist exposure imaging, form the thin gate part of T-shaped grid, after ICP etching grid groove, do not remove photoresist, evaporated metal Al is as separator, even electron beam adhesive UVIII, carry out secondary beam photoetching, form T-shaped grid, finally evaporate, peel off and obtain T-shaped gate figure.
As shown in Figure 1, Fig. 1 is the method flow diagram of the T-shaped grid of making gallium nitride-based field effect transistor provided by the invention, and the method comprises the following steps:
Step 1: at substrate surface coating electron beam resist;
Step 2: electron beam resist is exposed and developed, form etching window;
Step 3: from the etching window forming, substrate is carried out to etching, form the thin gate figure of T-shaped grid;
Step 4: evaporated metal thin layer, then second coat electron beam resist;
Step 5: the electron beam resist of second coat is carried out to electron beam exposure and development, remove thin metal layer, form T-shaped gate figure;
Step 6: evaporation deposition grid metal on the electron beam resist of second coat and T-shaped gate figure, peel off second coat electron beam resist and on grid metal, form T-shaped grid.
Described in step 1, at substrate surface coating electron beam resist, be that thickness is 2000 dusts at the even ZEP520 electron beam resist of substrate surface, and adopt 180 ℃ of hot plate heating in vacuum 3 minutes.Described substrate comprises AlGaN layer, GaN layer and SiN dielectric layer from the bottom to top successively.
Described in step 2, electron beam resist being exposed and developing forms etching window, is to adopt electron beam exposure technique to realize, and dosage is 300 μ C/cm
2, electric current is 200pA, energy is 100kV; Wherein this etching window is in order to form the thin gate figure of T-shaped grid, and the width of thin grid line bar is 0.1 μ m, and developer solution ZED-N50 develops 90 seconds, fixing solution ZMD-D photographic fixing 15 seconds, and dry up with nitrogen.
Described in step 3, from the etching window forming, substrate is carried out to the thin gate figure that etching forms T-shaped grid, to adopt ICP etching technics, from the etching window forming, substrate is carried out to etching, this etching penetrates the SiN dielectric layer of substrate and GaN layer until be etched into AlGaN layer, forms the thin gate figure of T-shaped grid.The etching gas that described ICP etching technics adopts is SF
6and CHF
3mist, ratio is SF
6: CHF
3=3: 40, etch period is 90 seconds, and radio-frequency power (RF) is 20W, and direct current power (LF) is 250W, etching pressure (WP) 0.5Pa.
Then the thin layer of evaporated metal described in step 4 in the step of second coat electron beam resist, is evaporated metal Al thin layer, and thickness is 100 dusts, in order to as separator; Then second coat electron beam resist, this electron beam resist is UVIII electron beam resist, thickness is 1 μ m, and adopts 130 ℃ of hot plate heating in vacuum 1 minute.
Described in step 5, the electron beam resist of second coat being carried out to electron beam exposure and development, remove thin metal layer, form T-shaped gate figure, is that the electron beam resist of second coat is carried out to electron beam exposure and development, and it is 100 μ C/cm that exposure adopts dosage
2, electric current is 200pA, energy is 100kV; After exposure, with 120 ℃ of hot plate vacuum back-flows drying glue 4 minutes, then with developer solution CD26, develop 60 seconds, remove metal Al thin layer, and with deionized water rinsing, nitrogen dries up, and forms T-shaped gate figure, wherein, the grid cover width of T-shaped grid is 0.5 μ m, and the thin grid width of T-shaped grid is 0.1 μ m.
Described in step 6 on the electron beam resist of second coat and T-shaped gate figure evaporation deposition grid metal, peel off second coat electron beam resist and on grid metal, form in the step of T-shaped grid, grid metal component is Ni/Au, thickness is respectively Ni=400 dust, Au=5000 dust.
It based on Fig. 1, is the method flow diagram of the T-shaped grid of making gallium nitride-based field effect transistor provided by the invention, Fig. 2 a to Fig. 2 g shows the process chart according to the T-shaped grid of the making gallium nitride-based field effect transistor of the embodiment of the present invention, specifically comprises the following steps:
As shown in Figure 2 a, at substrate surface coating electron beam resist,, at the even ZEP520 electron beam resist of substrate surface, thickness is about 2000 dusts, and adopts 180 ℃ of hot plate heating in vacuum 3 minutes; This substrate comprises AlGaN layer, GaN layer and SiN dielectric layer from the bottom to top successively, and SiN dielectric thickness is generally 1000 dusts;
As shown in Figure 2 b, electron beam resist exposed and developed, forming etching window; Adopt electron beam exposure technique that ZEP520 electron beam resist is exposed and developed, form etching window; Wherein, this etching window is in order to form the thin gate figure of T-shaped grid, and the width of thin grid line bar is 0.1 μ m, and developer solution ZED-N50 develops 90 seconds, fixing solution ZMD-D photographic fixing 15 seconds, and nitrogen dries up;
As shown in Figure 2 c, adopt ICP etching technics, from the etching window forming, substrate is carried out to etching, this etching penetrates SiN dielectric layer and GaN layer until be etched into AlGaN substrate certain depth, forms the thin gate figure of T-shaped grid; Etching gas is SF
6and CHF
3mist, ratio is SF
6: CHF
3=3: 40, etch period is 90 seconds.
As shown in Figure 2 d, evaporated metal Al thin layer, thickness is 100 dusts, in order to as separator, prevents that photoresist from dissolving each other.
As shown in Figure 2 e, second coat electron beam resist, this electron beam resist is UVIII electron beam resist, thickness is 1 μ m, 130 ℃ of hot plate heating in vacuum 1 minute;
As shown in Fig. 2 f, the electron beam resist of second coat is carried out to electron beam exposure and development, after exposure, with 120 ℃ of hot plate vacuum back-flows drying glue 4 minutes, then with developer solution CD26, develop 60 seconds, remove metal Al thin layer, and with deionized water rinsing, nitrogen dries up, and forms T-shaped gate figure, wherein, the grid cover width of T-shaped grid is 0.5 μ m, and the thin grid width of T-shaped grid is 0.1 μ m;
As shown in Figure 2 g, grid evaporation of metal and peeling off, i.e. evaporation deposition grid metal on the electron beam resist of second coat and T-shaped gate figure, metal component is Ni/Au, thickness is respectively Ni=400 dust, Au=5000 dust, then peel off second coat electron beam resist and on grid metal, form T-shaped grid.The grid foot section of described T-shaped grid structure is filled grid slot part completely, and the grid cover part of T-shaped grid structure does not directly contact with SiN dielectric layer.
Fig. 3 is the generalized section according to the T-shaped grid of the making gallium nitride-based field effect transistor of the embodiment of the present invention, comprises source electrode 1, drain electrode 2 and the T-shaped grid 3 of both sides.On device after having formed source-drain electrode, active area isolation, make T-shaped grid, T-shaped grid are between source electrode and drain electrode.
In embodiments of the present invention, the T-shaped grid of the gallium nitride-based field effect transistor shown in Fig. 3, its manufacture craft can be summarised as from another angle: first source electrode, the drain electrode of AlGaN/GaN HEMT device making technics formation device routinely; Device is carried out to a medium passivation; Adopt electron beam lithography to form grid groove figure, then medium, GaN cap layer and a part AlGaN epitaxial loayer are carried out to etching, the even glue of the device after etching is carried out to secondary beam photoetching, form T-shaped gate figure, then carry out grid metal evaporation, peel off, form T-shaped grid.A wherein medium passivation, adopting medium kind is SiN, dielectric thickness is 1000 dusts.Grid well width is 0.1 μ m, by electron beam lithography, is formed, and etching technics is ICP etching.The electron beam resist that once electron beam photoetching adopts is ZEP520A, after ICP etching grid groove, do not remove photoresist, and direct even secondary beam glue UVIII, the middle metal A l that adopts is as separator.The even glue thickness of the electron beam resist ZEP520A that once electron beam photoetching adopts is 2000 dusts, and when ICP etching SiN medium forms grid groove, while etching ZEP520A, is 1000 dusts by the reduced thickness of glue.Grid metal component, thickness are Ni/Au=400/5000 dust.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of making, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (9)
1. a manufacture method for the T-shaped grid of gallium nitride-based field effect transistor, is characterized in that, comprising:
At substrate surface coating electron beam resist;
Electron beam resist is exposed and developed, form etching window;
From the etching window forming, substrate is carried out to etching, form the thin gate figure of T-shaped grid;
Evaporated metal thin layer, then second coat electron beam resist;
The electron beam resist of second coat is carried out to electron beam exposure and development, remove thin metal layer, form T-shaped gate figure; And
Evaporation deposition grid metal on the electron beam resist of second coat and T-shaped gate figure, peel off second coat electron beam resist and on grid metal, form T-shaped grid.
2. the manufacture method of the T-shaped grid of gallium nitride-based field effect transistor according to claim 1, it is characterized in that, described in the step of substrate surface coating electron beam resist, at the even ZEP520 electron beam resist of substrate surface, thickness is 2000 dusts, and adopts 180 ℃ of hot plate heating in vacuum 3 minutes.
3. the manufacture method of the T-shaped grid of gallium nitride-based field effect transistor according to claim 2, is characterized in that, described substrate comprises AlGaN layer, GaN layer and SiN dielectric layer from the bottom to top successively.
4. the manufacture method of the T-shaped grid of gallium nitride-based field effect transistor according to claim 1, it is characterized in that, described electron beam resist is exposed and is developed form in the step of etching window, be to adopt electron beam exposure technique to realize, dosage is 300 μ C/cm
2, electric current is 200pA, energy is 100kV; Wherein this etching window is in order to form the thin gate figure of T-shaped grid, and the width of thin grid line bar is 0.1 μ m, and developer solution ZED-N50 develops 90 seconds, fixing solution ZMD-D photographic fixing 15 seconds, and dry up with nitrogen.
5. the manufacture method of the T-shaped grid of gallium nitride-based field effect transistor according to claim 1, it is characterized in that, describedly from the etching window that forms, substrate is carried out to etching and form the step of thin gate figure of T-shaped grid, to adopt ICP etching technics, from the etching window forming, substrate is carried out to etching, this etching penetrates the SiN dielectric layer of substrate and GaN layer until be etched into AlGaN layer, forms the thin gate figure of T-shaped grid.
6. the manufacture method of the T-shaped grid of gallium nitride-based field effect transistor according to claim 5, is characterized in that, the etching gas that described ICP etching technics adopts is SF
6and CHF
3mist, ratio is SF
6: CHF
3=3: 40, etch period is 90 seconds, and radio-frequency power (RF) is 20W, and direct current power (LF) is 250W, etching pressure (WP) 0.5Pa.
7. the manufacture method of the T-shaped grid of gallium nitride-based field effect transistor according to claim 1, it is characterized in that, then described evaporated metal thin layer in the step of second coat electron beam resist, is evaporated metal Al thin layer, thickness is 100 dusts, in order to as separator; Then second coat electron beam resist, this electron beam resist is UVIII electron beam resist, thickness is 1 μ m, and adopts 130 ℃ of hot plate heating in vacuum 1 minute.
8. the manufacture method of the T-shaped grid of gallium nitride-based field effect transistor according to claim 1, it is characterized in that, described the electron beam resist of second coat is carried out to electron beam exposure and development, remove thin metal layer, form in the step of T-shaped gate figure, be that the electron beam resist of second coat is carried out to electron beam exposure and development, it is 100 μ C/cm that exposure adopts dosage
2, electric current is 200pA, energy is 100kV; After exposure, with 120 ℃ of hot plate vacuum back-flows drying glue 4 minutes, then with developer solution CD26, develop 60 seconds, remove metal Al thin layer, and with deionized water rinsing, nitrogen dries up, and forms T-shaped gate figure, wherein, the grid cover width of T-shaped grid is 0.5 μ m, and the thin grid width of T-shaped grid is 0.1 μ m.
9. the manufacture method of the T-shaped grid of gallium nitride-based field effect transistor according to claim 1, it is characterized in that, evaporation deposition grid metal on the described electron beam resist in second coat and T-shaped gate figure, peel off second coat electron beam resist and on grid metal, form in the step of T-shaped grid, grid metal component is Ni/Au, and thickness is respectively Ni=400 dust, Au=5000 dust.
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| CN107833916A (en) * | 2017-10-13 | 2018-03-23 | 厦门市三安集成电路有限公司 | A kind of manufacture method of high-mobility electron electric crystal |
| CN108172512A (en) * | 2017-12-27 | 2018-06-15 | 成都海威华芯科技有限公司 | A kind of T-shaped grid preparation method for increasing silicon nitride medium angle of groove inclination degree |
| CN108172511A (en) * | 2017-12-27 | 2018-06-15 | 成都海威华芯科技有限公司 | A kind of T-shaped grid preparation method for having air ditch structure |
| CN109166936A (en) * | 2018-08-09 | 2019-01-08 | 镇江镓芯光电科技有限公司 | A kind of high resistant AlGaN base photoconductive switching device and preparation method thereof |
| CN110429027A (en) * | 2019-06-27 | 2019-11-08 | 福建省福联集成电路有限公司 | A kind of method and device improving low line width gated device production efficiency |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107833916A (en) * | 2017-10-13 | 2018-03-23 | 厦门市三安集成电路有限公司 | A kind of manufacture method of high-mobility electron electric crystal |
| CN108172512A (en) * | 2017-12-27 | 2018-06-15 | 成都海威华芯科技有限公司 | A kind of T-shaped grid preparation method for increasing silicon nitride medium angle of groove inclination degree |
| CN108172511A (en) * | 2017-12-27 | 2018-06-15 | 成都海威华芯科技有限公司 | A kind of T-shaped grid preparation method for having air ditch structure |
| CN108172511B (en) * | 2017-12-27 | 2020-11-24 | 成都海威华芯科技有限公司 | Manufacturing method of T-shaped grid with air channel structure |
| CN109166936A (en) * | 2018-08-09 | 2019-01-08 | 镇江镓芯光电科技有限公司 | A kind of high resistant AlGaN base photoconductive switching device and preparation method thereof |
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