CN104166285A - ITO conducting glass and preparation method thereof - Google Patents

ITO conducting glass and preparation method thereof Download PDF

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Publication number
CN104166285A
CN104166285A CN201410387915.2A CN201410387915A CN104166285A CN 104166285 A CN104166285 A CN 104166285A CN 201410387915 A CN201410387915 A CN 201410387915A CN 104166285 A CN104166285 A CN 104166285A
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ohm
index layer
low
layer
ito
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刘玉华
方凤军
陈立
谭伟
杜晓峰
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YICHANG NANBO DISPLAY DEVICES Co Ltd
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YICHANG NANBO DISPLAY DEVICES Co Ltd
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Abstract

The invention discloses a piece of colorless high-transparency ITO conducting glass with the area resistance ranging from 5 ohms to 200 ohms for an LCD. The ITO conducting glass comprises a glass body, a first low-refractive-index layer, a first high-refractive-index layer, a second low-refractive-index layer, a second high-refractive-index layer, a third low-refractive-index layer and an ITO layer, wherein the glass body, the first low-refractive-index layer, the first high-refractive-index layer, the second low-refractive-index layer, the second high-refractive-index layer, the third low-refractive-index layer and the ITO layer are stacked in sequence; the first low-refractive-index layer is made of SiO2 or MgF2; the first high-refractive-index layer is made of Nb2O5 or TiO2 or ZrO2 or Si3N4; the second low-refractive-index layer is made of SiO2 or MgF2; the second high-refractive-index layer is made of Nb2O5 or TiO2 or ZrO2 or Si3N4; the third low-refractive-index layer is made of SiO2 or MgF2. According to the ITO conducting glass, a stacked film layer structure is adopted to replace a traditional SiO2 layer; the film layer structure with the combination of a high refractive index and a low refractive index solves the problem that the SiO2 film layer, plated with an ITO film layer with the area resistance ranging from 5 ohms to 200 ohms, for the LCD is low in transparence, the transparence of the ITO glass is improved, and the visual effect is good. The invention further discloses a preparation method of the ITO conducting glass.

Description

ITO electro-conductive glass and preparation method thereof
Technical field
The present invention relates to a kind of saturating ITO electro-conductive glass of colourless height for LCD and preparation method thereof.
Background technology
ITO electro-conductive glass is on the basis of sodium calcium substrate or silicon boryl substrate glass, and the method for utilizing magnetron sputtering is deposition of silica (SiO successively 2) and tin indium oxide (common name ITO) processing film be made into.
ITO is a kind of metallic compound with good clear electric conductivity, have that forbidden band is wide, visible range light transmission is high and the characteristic such as resistivity is low, ITO electro-conductive glass is widely used in flat-panel display device, solar cell, specific function window coating and other field of photoelectric devices, is the transparency conductive electrode material that the various types of flat panel display devices such as current LCD, PDP, OLED, touch-screen extensively adopt.As the key foundation material of flat-panel display device, its continuous renewal along with flat-panel display device of ITO electro-conductive glass and upgrading and there is the more wide market space.
LCD adopts at plating SiO on glass with ITO electro-conductive glass more 2+ ITO two-layer film configuration, high permeability does not reach 90%, and the transmitance of ITO electro-conductive glass changes and present cyclical variation with ITO thicknesses of layers, and when indivedual ITO thicknesses of layers, transmitance is low to moderate 77% left and right, affects the visual effect of LCD.
Summary of the invention
Based on this, be necessary to provide good ITO electro-conductive glass of a kind of visual effect in use and preparation method thereof.
An ITO electro-conductive glass, for LCD, comprises the glass, the first low-index layer, the first high refractive index layer, the second low-index layer, the second high refractive index layer, the 3rd low-index layer and the ITO layer that stack gradually;
The material of described the first low-index layer is SiO 2or MgF 2;
The material of described the first high refractive index layer is Nb 2o 5, TiO 2, ZrO 2or Si 3n 4;
The material of described the second low-index layer is SiO 2or MgF 2;
The material of described the second high refractive index layer is Nb 2o 5, TiO 2, ZrO 2or Si 3n 4;
The material of described the 3rd low-index layer is SiO 2or MgF 2;
The thickness of described the first low-index layer is
The thickness of described the first high refractive index layer is
In one embodiment, the thickness of described the first low-index layer is
In one embodiment, the thickness of described the first high refractive index layer is
In one embodiment, the thickness of described the second low-index layer is
In one embodiment, the thickness of described the second high refractive index layer is
In one embodiment, the thickness of described the 3rd low-index layer is
In one embodiment, the surface resistance of described ITO electro-conductive glass is 5 ohm～7 ohm, 10 ohm～15 ohm, 12 ohm～17 ohm, 14 ohm～20 ohm, 17 ohm～25 ohm, 20 ohm～30 ohm, 30 ohm～45 ohm, 35 ohm～50 ohm, 40 ohm～60 ohm, 60 ohm～80 ohm, 80 ohm～120 ohm, 100 ohm～150 ohm, 125 ohm～200 ohm etc.
In one embodiment, the thickness of described ITO layer is
A preparation method for ITO electro-conductive glass, comprises the steps:
Glass is provided, dry after cleaning;
Described glass surface after cleaning is magnetron sputtering deposition the first low-index layer, the first high refractive index layer, the second low-index layer, the second high refractive index layer, the 3rd low-index layer and ITO layer successively, obtain described ITO electro-conductive glass, wherein, the material of described the first low-index layer is SiO 2or MgF 2, the material of described the first high refractive index layer is Nb 2o 5, TiO 2, ZrO 2or Si 3n 4, the material of described the second low-index layer is SiO 2or MgF 2, the material of described the second high refractive index layer is Nb 2o 5, TiO 2, ZrO 2or Si 3n 4, the material of described the 3rd low-index layer is SiO 2or MgF 2, the thickness of described the first low-index layer is the thickness of described the first high refractive index layer is
In one embodiment, the surface resistance of described ITO electro-conductive glass is 5 ohm～7 ohm, 10 ohm～15 ohm, 12 ohm～17 ohm, 14 ohm～20 ohm, 17 ohm～25 ohm, 20 ohm～30 ohm, 30 ohm～45 ohm, 35 ohm～50 ohm, 40 ohm～60 ohm, 60 ohm～80 ohm, 80 ohm～120 ohm, 100 ohm～150 ohm, 125 ohm～200 ohm etc.。
This ITO electro-conductive glass, by substituting traditional SiO with the first low-index layer, the first high refractive index layer, the second low-index layer, the second high refractive index layer and the 3rd low-index layer 2layer, the film layer structure of transmitance height combination has increased the transmitance of ITO layer, and more than can promoting the transmitance to 90% of ito glass, the indivedual ITO rete ITO of place transmitances promote more than 10%.With respect to traditional ITO electro-conductive glass, the visual effect of this ITO electro-conductive glass is better, due to the raising of transmitance, has reduced the reflection of light simultaneously, has improved serviceable life.
In addition, the coupling by rete between the high low-index material of multilayer, can also guarantee that the color of ITO rete is superficial, reduces the color contrast between ITO and prime coat, while being applied to LCD, promote whole LCD brightness, improve the visual effect of LCD.
Accompanying drawing explanation
Fig. 1 is the structural representation of the ITO electro-conductive glass of an embodiment;
Fig. 2 is the preparation method's of ITO electro-conductive glass as shown in Figure 1 process flow diagram.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.A lot of details have been set forth in the following description so that fully understand the present invention.But the present invention can implement to be much different from alternate manner described here, and those skilled in the art can do similar improvement without prejudice to intension of the present invention in the situation that, so the present invention is not subject to the restriction of following public concrete enforcement.
An embodiment ITO electro-conductive glass as shown in Figure 1, for LCD, comprise the glass 10, the first low-index layer 20, the first high refractive index layer 30, the second low-index layer 40, the second high refractive index layer 50, the 3rd low-index layer 60 and the ITO layer 70 that stack gradually.
Glass 10 can be selected the glass of float glass or other this area routines.
The material of the first low-index layer 20 is SiO 2or MgF 2.SiO 2refractive index be 1.48, MgF 2refractive index be 1.38.Adopt SiO 2or MgF 2as the material of the first low-index layer 20, make the transmitance of the first low-index layer 20 relatively high.
The thickness of the first low-index layer 20 is generally speaking, the thickness of the first low-index layer 20 is less for whole transmitance and the visual effect impact of ITO electro-conductive glass, and in a special embodiment, the thickness of the first low-index layer 20 can be 0, that is to say, the first low-index layer 20 can omit.
At one, preferably in embodiment, the thickness of the first low-index layer 20 is
The material of the first high refractive index layer 30 is Nb 2o 5, TiO 2, ZrO 2or Si 3n 4.Nb 2o 5refractive index be 2.3, TiO 2refractive index be 2.3, ZrO 2refractive index be 2.17, Si 3n 4refractive index be 2.0.Adopt Nb 2o 5, TiO 2, ZrO 2or Si 3n 4as the material of the first high refractive index layer 30, make the transmitance of the first high refractive index layer 30 relatively low.
The thickness of the first high refractive index layer 30 can be in a special embodiment, the thickness of the first high refractive index layer 30 can be 0, that is to say, the first high refractive index layer 30 can omit.
At one, preferably in embodiment, the thickness of the first high refractive index layer 30 is
The material of the second low-index layer 40 is SiO 2or MgF 2.SiO 2refractive index be 1.48, MgF 2refractive index be 1.38.Adopt SiO 2or MgF 2as the material of the second low-index layer 40, make the transmitance of the second low-index layer 40 relatively high.
In present embodiment, the thickness of the second low-index layer 40 is
The material of the second high refractive index layer 50 is Nb 2o 5, TiO 2, ZrO 2or Si 3n 4.Nb 2o 5refractive index be 2.3, TiO 2refractive index be 2.3, ZrO 2refractive index be 2.17, Si 3n 4refractive index be 2.0.Adopt Nb 2o 5, TiO 2, ZrO 2or Si 3n 4as the material of the second high refractive index layer 50, make the transmitance of the second high refractive index layer 50 relatively low.
In present embodiment, the thickness of the second high refractive index layer 50 is
The material of the 3rd low-index layer 60 is SiO 2or MgF 2.SiO 2refractive index be 1.48, MgF 2refractive index be 1.38.Adopt SiO 2or MgF 2as the material of the 3rd low-index layer 60, make the transmitance of the 3rd low-index layer 60 relatively high.
In present embodiment, the thickness of the 3rd low-index layer 60 is
In present embodiment, the thickness of ITO layer 70 is
The surface resistance of ITO electro-conductive glass can be 5 ohm～7 ohm, 10 ohm～15 ohm, 12 ohm～17 ohm, 14 ohm～20 ohm, 17 ohm～25 ohm, 20 ohm～30 ohm, 30 ohm～45 ohm, 35 ohm～50 ohm, 40 ohm～60 ohm, 60 ohm～80 ohm, 80～120 ohm, 100～150 ohm, 125～200 ohm etc.
Especially, the resistance range of corresponding ITO electro-conductive glass is 125 ohm～200 ohm, and the thickness of ITO layer 70 is the resistance range of corresponding ITO electro-conductive glass is 100 ohm～150 ohm, and the thickness of ITO layer 70 is the resistance range of corresponding ITO electro-conductive glass is 80 ohm～120 ohm, and the thickness of ITO layer 70 is the resistance range of corresponding ITO electro-conductive glass is 60 ohm～80 ohm, and the thickness of ITO layer 70 is the resistance range of corresponding ITO electro-conductive glass is 40 ohm～60 ohm, and the thickness of ITO layer 70 is the resistance range of corresponding ITO electro-conductive glass is 35 ohm～50 ohm, and the thickness of ITO layer 70 is the resistance range of corresponding ITO electro-conductive glass is 30 ohm～45 ohm, and the thickness of ITO layer 70 is the resistance range of corresponding ITO electro-conductive glass is 20 ohm～30 ohm, and the thickness of ITO layer 70 is the resistance range of corresponding ITO electro-conductive glass is 17 ohm～25 ohm, and the thickness of ITO layer 70 is the resistance range of corresponding ITO electro-conductive glass is 14 ohm～20 ohm, and the thickness of ITO layer 70 is the resistance range of corresponding ITO electro-conductive glass is 12 ohm～17 ohm, and the thickness of ITO layer 70 is the resistance range of corresponding ITO electro-conductive glass is 10 ohm～15 ohm, and the thickness of ITO layer 70 is the resistance range of corresponding ITO electro-conductive glass is 5 ohm～7 ohm, and the thickness of ITO layer 70 is
This ITO electro-conductive glass, by substituting traditional SiO with the first low-index layer 20, the first high refractive index layer 30, the second low-index layer 40, the second high refractive index layer 50 and the 3rd low-index layer 60 2layer, the film layer structure of transmitance height combination has increased the transmitance of ITO layer 70, and more than can promoting the transmitance to 90% of ito glass, the indivedual ITO rete ITO of place transmitances promote more than 10%.
With respect to traditional ITO electro-conductive glass, the visual effect of this ITO electro-conductive glass is better, due to the raising of transmitance, has reduced the reflection of light simultaneously, has improved serviceable life.
In addition, the coupling by rete between the high low-index material of multilayer, can also guarantee that the color of ITO rete is superficial, reduces the color contrast between ITO and prime coat, while being applied to LCD, promote whole LCD brightness, improve the visual effect of LCD.
The preparation method of above-mentioned ITO electro-conductive glass as shown in Figure 2, comprises the steps:
S10, provide glass 10, dry after cleaning.
Glass 10 can be selected the glass of float glass or other this area routines.
S20,10 surfaces of the glass after cleaning are magnetron sputtering deposition the first low-index layer 20, the first high refractive index layer 30, the second low-index layer 40, the second high refractive index layer 50, the 3rd low-index layer 60 and ITO layer 70 successively, obtains ITO electro-conductive glass.
The material of the first low-index layer 20 is SiO 2or MgF 2.SiO 2refractive index be 1.48, MgF 2refractive index be 1.38.Adopt SiO 2or MgF 2as the material of the first low-index layer 20, make the transmitance of the first low-index layer 20 relatively high.
The thickness of the first low-index layer 20 is generally speaking, the thickness of the first low-index layer 20 is less for whole transmitance and the visual effect impact of ITO electro-conductive glass, and in a special embodiment, the thickness of the first low-index layer 20 can be 0, that is to say, the first low-index layer 20 can omit.
At one, preferably in embodiment, the thickness of the first low-index layer 20 is
The material of the first high refractive index layer 30 is Nb 2o 5, TiO 2, ZrO 2or Si 3n 4.Nb 2o 5refractive index be 2.3, TiO 2refractive index be 2.3, ZrO 2refractive index be 2.17, Si 3n 4refractive index be 2.0.Adopt Nb 2o 5, TiO 2, ZrO 2or Si 3n 4as the material of the first high refractive index layer 30, make the transmitance of the first high refractive index layer 30 relatively low.
The thickness of the first high refractive index layer 30 can be in a special embodiment, the thickness of the first high refractive index layer 30 can be 0, that is to say, the first high refractive index layer 30 can omit.
At one, preferably in embodiment, the thickness of the first high refractive index layer 30 is
The material of the second low-index layer 40 is SiO 2or MgF 2.SiO 2refractive index be 1.48, MgF 2refractive index be 1.38.Adopt SiO 2or MgF 2as the material of the second low-index layer 40, make the transmitance of the second low-index layer 40 relatively high.
In present embodiment, the thickness of the second low-index layer 40 is
The material of the second high refractive index layer 50 is Nb 2o 5, TiO 2, ZrO 2or Si 3n 4.Nb 2o 5refractive index be 2.3, TiO 2refractive index be 2.3, ZrO 2refractive index be 2.17, Si 3n 4refractive index be 2.0.Adopt Nb 2o 5, TiO 2, ZrO 2or Si 3n 4as the material of the second high refractive index layer 50, make the transmitance of the second high refractive index layer 50 relatively low.
In present embodiment, the thickness of the second high refractive index layer 50 is
The material of the 3rd low-index layer 60 is SiO 2or MgF 2.SiO 2refractive index be 1.48, MgF 2refractive index be 1.38.Adopt SiO 2or MgF 2as the material of the 3rd low-index layer 60, make the transmitance of the 3rd low-index layer 60 relatively high.
In present embodiment, the thickness of the 3rd low-index layer 60 is
In present embodiment, the thickness of ITO layer 70 is
The surface resistance of ITO electro-conductive glass can be 5 ohm～7 ohm, 10 ohm～15 ohm, 12 ohm～17 ohm, 14 ohm～20 ohm, 17 ohm～25 ohm, 20 ohm～30 ohm, 30 ohm～45 ohm, 35 ohm～50 ohm, 40 ohm～60 ohm, 60 ohm～80 ohm, 80 ohm～120 ohm, 100 ohm～150 ohm, 125 ohm～200 ohm etc.
Especially, the resistance range of corresponding ITO electro-conductive glass is 125 ohm～200 ohm, and the thickness of ITO layer 70 is the resistance range of corresponding ITO electro-conductive glass is 100 ohm～150 ohm, and the thickness of ITO layer 70 is the resistance range of corresponding ITO electro-conductive glass is 80 ohm～120 ohm, and the thickness of ITO layer 70 is the resistance range of corresponding ITO electro-conductive glass is 60 ohm～80 ohm, and the thickness of ITO layer 70 is the resistance range of corresponding ITO electro-conductive glass is 40 ohm～60 ohm, and the thickness of ITO layer 70 is the resistance range of corresponding ITO electro-conductive glass is 35 ohm～50 ohm, and the thickness of ITO layer 70 is the resistance range of corresponding ITO electro-conductive glass is 30 ohm～45 ohm, and the thickness of ITO layer 70 is the resistance range of corresponding ITO electro-conductive glass is 20 ohm～30 ohm, and the thickness of ITO layer 70 is the resistance range of corresponding ITO electro-conductive glass is 17 ohm～25 ohm, and the thickness of ITO layer 70 is the resistance range of corresponding ITO electro-conductive glass is 14 ohm～20 ohm, and the thickness of ITO layer 70 is the resistance range of corresponding ITO electro-conductive glass is 12 ohm～17 ohm, and the thickness of ITO layer 70 is the resistance range of corresponding ITO electro-conductive glass is 10 ohm～15 ohm, and the thickness of ITO layer 70 is the resistance range of corresponding ITO electro-conductive glass is 5 ohm～7 ohm, and the thickness of ITO layer 70 is
The ITO electro-conductive glass that said method makes, by substituting traditional SiO with the first low-index layer 20, the first high refractive index layer 30, the second low-index layer 40, the second high refractive index layer 50 and the 3rd low-index layer 60 2layer, the film layer structure of transmitance height combination has increased the transmitance of ITO layer 70, and more than can promoting the transmitance to 90% of ito glass, the indivedual ITO rete ITO of place transmitances promote more than 10%.
With respect to traditional ITO electro-conductive glass, the visual effect of this ITO electro-conductive glass is better, due to the raising of transmitance, has reduced the reflection of light simultaneously, has improved serviceable life.
In addition, the coupling by rete between the high low-index material of multilayer, can also guarantee that the color of ITO rete is superficial, reduces the color contrast between ITO and prime coat, while being applied to LCD, promote whole LCD brightness, improve the visual effect of LCD.
Be specific embodiment below.
Embodiment 1
It is dry after float glass is cleaned.
In operating pressure, be 2 * 10 -3under the condition of mbar, at Float Glass Surface successively deposit thickness, be siO 2layer, thickness are nb 2o 5layer, thickness are siO 2layer, thickness are nb 2o 5layer, thickness are siO 2layer and thickness are iTO layer, obtain 550nm place transmitance>=93%, several subdiaphanous ITO electro-conductive glass.
Embodiment 2
It is dry after float glass is cleaned.
In operating pressure, be 3 * 10 -3under the condition of mbar, at Float Glass Surface successively deposit thickness, be siO 2layer, thickness are tiO 2layer, thickness are siO 2layer, thickness are tiO 2layer, thickness are siO 2layer and thickness are iTO layer, obtain transmitance>=93%, several subdiaphanous ITO electro-conductive glass.
Embodiment 3
It is dry after float glass is cleaned.
In operating pressure, be 8 * 10 -4under the condition of mbar, at Float Glass Surface successively deposit thickness, be nb 2o 5layer, thickness are siO 2layer, thickness are nb 2o 5layer, thickness are siO 2layer and thickness are iTO layer, obtain transmitance>=93%, several subdiaphanous ITO electro-conductive glass.
Embodiment 4
It is dry after float glass is cleaned.
In operating pressure, be 1 * 10 -3under the condition of mbar, at Float Glass Surface successively deposit thickness, be zrO 2layer, thickness are mgF 2layer, thickness are si 3n 4layer, thickness are siO 2layer and thickness are iTO layer, obtain transmitance>=88%, several subdiaphanous ITO electro-conductive glass.
Embodiment 5
It is dry after float glass is cleaned.
In operating pressure, be 1 * 10 -3under the condition of mbar, at Float Glass Surface successively deposit thickness, be siO 2layer, thickness are tiO 2layer, thickness are siO 2layer, thickness are zrO 2layer and thickness are iTO layer, obtain transmitance>=88%, several subdiaphanous ITO electro-conductive glass.
Embodiment 6
It is dry after float glass is cleaned.
In operating pressure, be 1 * 10 -3under the condition of mbar, at Float Glass Surface successively deposit thickness, be siO 2layer, thickness are zrO 2layer, thickness are siO 2layer, thickness are zrO 2layer and thickness are iTO layer, obtain transmitance>=84%, several subdiaphanous ITO electro-conductive glass.
The ITO electro-conductive glass that embodiment 1～6 is prepared, utilizes UV2450 spectrophotometer to carry out 550nm transmission measurement, and result is as shown in table 1 below.
Transmission measurement result under the 550nm of the ITO electro-conductive glass that table 1: embodiment 1～6 prepares.
The transmitance of the ITO electro-conductive glass that as can be seen from Table 1, embodiment 1～6 prepares obtains higher lifting.
The ITO electro-conductive glass that embodiment 1～6 prepares, by the coupling of rete between the high low-index material of multilayer, the color that can also guarantee ITO rete is superficial, reduces the color contrast between ITO and prime coat, while being applied to LCD, promote whole LCD brightness, improve the visual effect of LCD.
The above embodiment has only expressed several embodiment of the present invention, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to the scope of the claims of the present invention.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection domain of patent of the present invention should be as the criterion with claims.

Claims (10)

1. an ITO electro-conductive glass, for LCD, is characterized in that, comprises the glass, the first low-index layer, the first high refractive index layer, the second low-index layer, the second high refractive index layer, the 3rd low-index layer and the ITO layer that stack gradually;
The material of described the first low-index layer is SiO 2or MgF 2;
The material of described the first high refractive index layer is Nb 2o 5, TiO 2, ZrO 2or Si 3n 4;
The material of described the second low-index layer is SiO 2or MgF 2;
The material of described the second high refractive index layer is Nb 2o 5, TiO 2, ZrO 2or Si 3n 4;
The material of described the 3rd low-index layer is SiO 2or MgF 2;
The thickness of described the first low-index layer is
The thickness of described the first high refractive index layer is
2. ITO electro-conductive glass according to claim 1, is characterized in that, the thickness of described the first low-index layer is
3. ITO electro-conductive glass according to claim 1, is characterized in that, the thickness of described the first high refractive index layer is
4. ITO electro-conductive glass according to claim 1, is characterized in that, the thickness of described the second low-index layer is
5. ITO electro-conductive glass according to claim 1, is characterized in that, the thickness of described the second high refractive index layer is
6. ITO electro-conductive glass according to claim 1, is characterized in that, the thickness of described the 3rd low-index layer is
7. ITO electro-conductive glass according to claim 1, it is characterized in that, the surface resistance of described ITO electro-conductive glass is 5 ohm～7 ohm, 10 ohm～15 ohm, 12 ohm～17 ohm, 14 ohm～20 ohm, 17 ohm～25 ohm, 20 ohm～30 ohm, 30 ohm～45 ohm, 35 ohm～50 ohm, 40 ohm～60 ohm, 60 ohm～80 ohm, 80 ohm～120 ohm, 100 ohm～150 ohm or 125 ohm～200 ohm.
8. according to the ITO electro-conductive glass described in any one in claim 1～7, it is characterized in that, the thickness of described ITO layer is
9. a preparation method for ITO electro-conductive glass, is characterized in that, comprises the steps:
Glass is provided, dry after cleaning;
Described glass surface after cleaning is magnetron sputtering deposition the first low-index layer, the first high refractive index layer, the second low-index layer, the second high refractive index layer, the 3rd low-index layer and ITO layer successively, obtain described ITO electro-conductive glass, wherein, the material of described the first low-index layer is SiO 2or MgF 2, the material of described the first high refractive index layer is Nb 2o 5, TiO 2, ZrO 2or Si 3n 4, the material of described the second low-index layer is SiO 2or MgF 2, the material of described the second high refractive index layer is Nb 2o 5, TiO 2, ZrO 2or Si 3n 4, the material of described the 3rd low-index layer is SiO 2or MgF 2, the thickness of described the first low-index layer is the thickness of described the first high refractive index layer is
10. the preparation method of ITO electro-conductive glass according to claim 9, it is characterized in that, the surface resistance of described ITO electro-conductive glass is 5 ohm～7 ohm, 10 ohm～15 ohm, 12 ohm～17 ohm, 14 ohm～20 ohm, 17 ohm～25 ohm, 20 ohm～30 ohm, 30 ohm～45 ohm, 35 ohm～50 ohm, 40 ohm～60 ohm, 60 ohm～80 ohm, 80 ohm～120 ohm, 100 ohm～150 ohm or 125 ohm～200 ohm.
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107992234A (en) * 2017-12-29 2018-05-04 东莞北斗同创智能科技有限公司 A kind of intelligence wearing touch-screen and its semi-transparent ito film layer manufacturing method thereof
CN112526650A (en) * 2020-12-09 2021-03-19 浙江日久新材料科技有限公司 Low impedance type ITO conductive film
CN115857234A (en) * 2022-11-15 2023-03-28 佛山纳诺特科技有限公司 Color light adjusting film and preparation method thereof

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Application publication date: 20141126