CN1044649C - 难熔金属覆盖的低阻金属导体线和通路及其制造方法 - Google Patents

难熔金属覆盖的低阻金属导体线和通路及其制造方法 Download PDF

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CN1044649C
CN1044649C CN93101333A CN93101333A CN1044649C CN 1044649 C CN1044649 C CN 1044649C CN 93101333 A CN93101333 A CN 93101333A CN 93101333 A CN93101333 A CN 93101333A CN 1044649 C CN1044649 C CN 1044649C
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refractory metal
metal
low resistivity
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CN1076548A (zh
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雷吉夫·V·乔西
杰罗姆·J·库欧莫
霍玛兹雅·M·达拉尔
路易斯·L·苏
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International Business Machines Corp
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Abstract

本发明一般涉及电的导体线与通路的制法。采用物理汽相淀积低电阻率金属或合金之后接着化学汽相淀积难熔金属与随后的平整化两者的结合可制出优良的导线和通路。CVD施加难熔金属盖时，改变SiH4与WF6之比可以控制硅掺入钨的盖层的量。准直溅射可在介质开口产生难熔金属衬垫，适合于作铜基金属化以及CVD钨的扩散阻挡层。

Description

难熔金属覆盖的低阻金属导体线和通路及其制造方法
本发明一般涉及电的导体线与通路的制法，以连接衬底，诸如半导体上的电路与相应的封装件，尤其还涉及采用物理汽相淀积(PVD)法淀积低阻金属和化学汽相淀积(CVD)法淀积难熔金属的组合来填充衬底上的缝或孔的一种低成本的方法。本发明特别适用于亚微米电路的制作。
低阻金属，诸如铝和铜以及它们的二元或三元的合金已广泛用于半导体制作的细线互连。细线互连金属的曲型例子，包括AlxCuy，其中x与y之和等于1，且x与y都大于或等于0而又小于或等于1，三元合金，如Al-Pd-Cu、Al-Pd-Nb及Al-Cu-Si和其它以低阻金属为基的合金。如今要强调的是随超大规模集成(VLSI)电路制作的线条宽度的尺寸按比例缩小，已经带来包括不适当的绝缘、电迁移及平面化方面的可靠性问题。
IBM技术公开公报Ahn等人((Vol、33,No.5,Oct,1990,PP.217-218)披露了用WF6和SiH4的含氢混合物选择性淀积制造包覆以钨的铜导体与通孔。密封了的互连线，像Ahn等人做的那样，具有很高的抗电迁移能力，并且选用晶粒尺寸小的钨膜。以减小反射率，因而增强光刻设备聚焦的能力与光刻胶的解象能力。但是，采用Ahn等人描述的低温方法所形成的钨层理应是富硅(如.3-4％)，而且对铜不会是一种良好的扩散阻档层，因为形成铜的硅化物将会恶化铜的电阻率。因此。在低温下用选择法难以淀积一层扩散阻挡层。况且，Ahn等人的技术依赖于环形在导线底部的形成，而通常这是由释放的湿气与WF6反应产生的，还认为环形的出现的不会是可靠的。
Dalton等人(VMIC Conference,June12-13,1990,pp,289-292)指出，含SiH4与H2还原WF6的一种热壁CVD反应，在铝或合金导体上形成选择的钨层，其结果在铝与钨和界面含有氟团，该氟团是WF6与铝的一种副产物，如反应式1所示：
            氟化铝薄层会增加金属1到金属2通路的串联接触电阻。Dalton报告说，用CVD的钨密封之前，在铝的顶面先溅射TiW膜，可以消除吸附氟的问题。
Dalton披露一种形成互连线的传统方案，这里，首先在一平整的表面上淀积铝，溅射一层TiW以覆盖其上(只是与传统不同的过程)，然后，用光刻胶成象和显影，接着通过反应离子刻蚀(RIE)把该铝层刻成图案。再将所得到的结构覆盖一层钝化介质，如SiO2或聚酰亚胺，随后本身也经RIE刻成图案并且金属化，实现一种多层结构。图1引自Dalton报告，并示出通过传统工艺方式生产的多层器件。在金属导线的局部的介质层中有缝，而且顶面很不平整。
采用RIE法很难实现介质的平整化。平整度部分取决于图形的密度。以及由后继金属化时涂覆问题形成的不平表面，如果将RIE技术用于聚酰亚胺，当刻蚀导线到聚酰亚胺表面时。因除去光刻胶的过程也会除去聚酰亚胺，所以，需要为以铝或铜为基的导线的顶面上除去光刻胶而设置一刻蚀阻挡层。任何含铜量高的，铝或铜的合金的RIE都极为困难。传统工艺方法的严重缺点，包括金属的RIE，由于粒子的缺陷随着几何尺寸的微细化大量的金属短路势必增多。
Brown等人的美国专利4,824,802披露一种多层VLSI金属化结构的层间介质通路或接触孔的填充方法。详细地说，一种过渡金属，诸如钨或钼，通过CVD法或是选择地淀积在绝缘层的开孔中，或是非选性地淀积在绝缘层的整个表面及开孔中，然后，将平整化保护层，诸如偶氮苯醌酚醛型清漆、聚甲基丙烯酸酯、聚酰亚胺，或其它的热塑性的材料加到过渡金属的顶面上。通过刻蚀直至带保护层的过渡金属被整平的位置，从而得到平整了的结构。Brown等人的方法避免不了侵蚀金属及与刻蚀有关的其它问题，还不能用于平整化Al-Cn或别的软合金材料，因它们的性质不同于诸如钨与钼之类的较硬金属。因此，采用Brown等人的方法，难以完全填满通路及导线。
Beyer等人的美国专利4,944,836披露一种可用在衬底上产生共平面的金属/绝缘物膜的化学-机械抛光技术。尤其是，Beyer等人预料，可将底下的绝缘层刻出图形、淀积Al-Cu膜,然后采用化学-机械抛光技术，在这里用稀硝酸氧化铝粉悬浮液来机械研磨表面，除去Al-Cu。以该抛光混合物除去Al-Cu，势必应比除去底下绝缘物有更高的速度。这样所得的结构就包含有由绝缘层平整化了的Al-Cu导线，而且为制造多层结构就方便地添加后续的多层。
Cote等人的美国专利US-4,956,313披露了一种通路填充与平整化技术，其中Al-Cu合金导线成图在衬底的第一纯化层的顶面上。这些导线又涂敷上第二纯化层，该层以掺杂的玻璃，诸如磷硅玻璃(PSG)或硼磷硅玻璃(BPSG)为好，它能与Al-Cu合金导线各外形适配，然后在第二纯化层上开出通路以露出导线，再用CVD法将钨加到第二纯化层的表面及通路中，Cote等人的报告指出，CVD钨适合于共形，又能填充通路而不会产生空隙。而后，该结构经磨料悬浮液抛光平整化。
无论Beyer等人还是Cote等人都认为对低电阻率、软金属，如Al-Cu合金等予以抛光是不实际的。这是因为在悬浮液的作用下，这些材料势必表面受擦伤、被沾污及侵蚀。况且，按照Cote等人产生的平整化结构需用多道工艺步骤，会增加成本降低生产率。
Rossnagel等人在J.Vac.Sci.Technol.2:261(Mar/Apr.1991))披露了一种用以淀积薄膜的准直磁控溅射淀积技术，该技术与剥离刻图形技术和孔的填充是兼容的。该技术也出现在美国专利4,824,544中,于此可参照结合。
Shiozaki等人在固态器件与材料的第19届会议文摘(Abstracts of The 19th Conference on solid state Devices andMaterials)上披露了采用选择的钨淀积技术，填充在高电阻率硬金属，如Mosix，上面的孔，并与软金属的密封无关。
因此，本发明的一个目的是提供一种使用一种具有高成品率的方法在衬底上按焉微米级形成的低成本、无侵蚀、耐磨损、抗电迁移的电导体互连电路。
本发明的另一目的是提供一种廉价地形成密封的微细导电线的技术，尤其可应用于亚微米电路的制造，而不必将导线暴露于RIE之下。
本发明的再一个目的是提供一种耐磨损、有坚固盖层能减小电迁移的低阻导线或通路。
本发明的又一个目的是提供用CVD难熔金属密封的由PVD低电阻率形成的极好互连线。
本发明的上述目的通过下述器件和方法可以达到。
这种器件包括一衬底、至少一层位于所述衬底之上的介质和位于所述至少一层介质上的一个开口内的金属化部分；其中，所述金属化部分从与所述至少一层介质层朝向所述衬底的一个表面共平面的表面伸出；以及，所述金属化部分由被至少一种难熔金属或合金密封的低电阻率金属或合金组成，其特征在于：所述低电阻率金属或合金的侧壁互相朝着所述金属化部分与所述至少一层介质的表面共面的那部分表面向内逐渐变细。
完成本发明目的的制造具有位于形成一个衬底上的至少一层介质的一个开口中的金属化部分的器件的方法包括下列步骤：在位于衬底上的介质层中形成具有顶部及底部的开口；在所述介质层的顶面和所述开口的底部淀积第一难熔金属或合金或化合物；在所述介质的所述顶面和所述开口的所述底面上的所述难熔金属之上淀积低电阻率金属或合金，直至一低于所述开口的所述顶部的位置；在所述介质顶面和所述开口底部的所述难熔金属之上的所述低电阻率金属或合金上淀积第二难熔金属或合金，以及从所述介质层的顶面除去所述第一难熔金属或合金或化合物、所述低电阻率金属或合金，以及所述第二难熔金属或合金，从而产生一种平面结构，该结构包括一个具有由所述介质层平整化了的难熔金属或合金所覆盖的低电阻率金属或合金的金属化部分部位。
根据本发明，提供了一种简单而低费用可行的技术，所得的电导体无侵蚀，具有耐磨损与抗电迁移，还证实工艺成品率高。最重要的是，这种技术。因首先淀积只在平表面上进行，而完全避免了麻烦的介质平整化工序。本技术采用普通一组或单圆片的PVD工艺过程，诸如蒸发、溅射或准直溅射，接着用共形淀积难熔金属。
上述的及其它目的，各种情况及优点参照附图从下面的本发明优选的实施例的详细描述中，将能得到更好的理解，其中：
图1是表示顶面不平的现有技术半导体衬底的剖面侧视图；
图2A到2E是说明本发明一种改变的半导体衬底的连续剖面侧视图；
图3A至3B是有器件的衬底的连续侧视剖面图，在刻制绝缘物图形之前，其上涂敷了待整平的绝缘物；
图4A到4E是说明本发明的另一种改型的半导体衬底的连续剖面侧视图；
图5A至5E是说明本发明还有一种改型的半导体衬底的连续剖面侧视图；
图6是用PVD淀积在通路中的衬垫的扫描电子显微照片(SEM)；
图7A和7B是说明本发明的再一种改型的半导体衬底的连续剖面侧视图；
图8是举例的，多层镶嵌结构，其中PVD AlxCuy合金覆盖着CVD钨的剖面图；以及
图9A和9B分别是化学-机械抛光之前与之后具有被钨覆盖的Al-Cu合金导线的结构剖面SEM的显微照片。
本发明一般涉及衬底上形成金属填充的通路及导体线的方法，而该通路及导体线包括软的低电阻率的金属，该软金属又覆盖着相当硬的难熔金属，能抗侵蚀、耐磨损以及抗电迁移，此外，该通路及导体线用涂敷在衬底上的介质层予以平整化。采用的PVD淀积技术，按图2A-E、图4A-E及图7A-B描述的工艺过程，可以创造出多种不同的新颖结构。应当理解为，这些技术与所得到的结构不应限于使用任何特定的衬底和介质盖层(例如，象图2A-E与5A-E所示的使用无机的与有机的多层组合，同样可用无机或有机绝缘材料的单层)。而且，本发明也不限于任何特殊铁金属组合；宁可说，本发明的目的是将能耐磨损、抗侵蚀及抗电迁移的难熔硬金属盖在低阻的软金属上。本发明尤其和使用铝与铜合金的电层系有关，因为已经发现采用PVD准直溅射能以可靠的大高宽比填充到亚微米通路和槽中，淀积出均匀共形的难熔金属衬垫材料涂覆层。该难熔金属衬垫在后续的过程中将用作铜的有效的扩散阻挡层。
参见图2A，首先，将衬底10涂敷一层介质，接着把介质层刻出图形。衬底10优选的是适于制造集成电路的硅、砷化镓，或其它材料。然而，该衬底10也可以是常用干封装半导体，与制造薄膜互连线的陶瓷、玻璃、或复合材料。该衬底10最好于其中形成了许多半导体器件，可包括场效应晶体管(FET)、双极晶体管、电阻，肖特基二极管，或类似器件。应该理解，图3A-B、4A-E、5A-E、7A-B、以及图8各个所示的衬底10可以有上面讨论过任何特征，再加上本技术领域公知的其它的任何特征。
图2A所示的介质复合层，分别包括顶上和底下的无机介质层11和13，可以是二氧化硅(SiO2)，氮化硅(Si3N4)，或类似物，该无机物层11和13两者最好用等离子增强化学汽相淀积(PECVD)法淀积，在导电的寸底10上，90乇下，首先淀积SiO2，再制备对可动离子扩散起阻挡作用的Si3N4(0.075至0.1μm)。一较厚的有机介质层12，诸如聚酰亚胺之类，淀积在无机层11和13之间。也可以采用一种无机物介质，诸如SiO2、PSG或BPSG的，或有机物介质，诸如聚酰亚胺，并且可用众所周知的许多技术的任一种，诸如在氮化气氛中、溅射，或PECVD法生长一层单层，去替代由层11,12和13所形成的介质复合层。虽然，图2A-E和5A-E表示应用复合结构，而图3A-B、4A-E及7A-B表示运用单无机物的或介质层，但应理解，该介质层不限于本发明的实践，而且在本发明的实施中，可以采用所用的任何介质(如，无机或有机的)本身或组合。
图2A示出介质复合层中形成了的开口14，这样的开口可以是一通路或导线的槽。VLSI应用中，该衬底10或许有如图2A所示的数百到几千个开口14，最后，得到密集复杂的图形终归要在衬底上或之中互连成电路。最好采用增强反差的不刻(CEL)法，随后用多圆片装置利用CHF3和O2刻蚀槽或孔，刻蚀以适当的过腐蚀为佳，以确保该开口14有所要求的尺寸，并延伸到衬底10表面的接触点作为一通路柱塞的图形。至于导线图形，最好将介质层局部刻蚀到这样的深度，要比待采用的金属厚度大约高10％，刻蚀聚酰亚胺12时，以低温下的O2 RIE为佳。应该知道，如图2A-E、4A-E、5A-E及7A-B所指的开口14成形在本领域内都是熟知的，还可以用许多不同的技术产生。
如图3A和3B所示，若开始衬底10其上有一形成的器件(与图2A所示的不带向上凸出的器件的平整的衬底10相反)，制造成开口22之前，首先要将涂覆器件18的绝缘物20平整化。平整化可以用RIE、化学机械抛光、RIE和化学机械抛光的结合，或其他方法实现。
图2B-2E说明本发明的第一种改型，其中平面刻成的结构，可以是图2A所见的一个，或是图3B所见的一个，或是在涂覆的介质上形成了开口14的任何其它结构，然后，有一淀积的难熔金属层15盖在该无机介质层13以及在间隙14底部露出的衬底10上。为达到此目的，最好采用薄膜工艺技术手册(Handbook of Thin FilmTechnology,eds.Maissel和Glen,McGraw-Hill Co,1983,pp1-100)所述的蒸发PVD技术。此刻采用蒸发PVD的一个重要优点在于难熔金属层15不会覆盖住介质开口14的侧壁。应该理解，PVD准直溅、类似于美国专利4,824,544叙述的方法都能用于本发明的实施，但是，与图2B所示的情况相反，准直溅射产生共形层会涂敷开口14的侧壁。使用准直溅射产生难熔衬垫将于下面详细讨论。难熔金属可以是钛(Ti)、钛合金或复合物，诸如Ti/TiN、钨(W)、钛/钨(Ti/W)合金、或铬(Cr)，或钽(Ta)及其合金，或某些其它合适的材料。要是待形成的为铜基的导线或通路，那末就应使用对铜能起扩散阻挡作用的难熔金属，使得在开口14中淀积铜的后续工艺时，能防止铜扩散到衬底10中。
接着，用蒸发PVD法在难熔金属15上面淀积单一的、二元或三元的金属化层16，再说，由于采用蒸发法，开口14的侧壁不会涂敷上该金属。但是，应该理解，金属化16层也能用准直溅射施加上，这种情况下，开口14内和介质叠层的顶上，为共形的金属化涂层。最好，该金属化为AlxCuy，这里x与y的和等于1，而x与y两者都大干或等于0，且小于或等于1；可是，三元合金，如Al-Pd-Cu和多元合金，如Al-Pd-Nb-Au也都是适合的。金属化层16的本质特点在于，与难熔金属15比较，金属化层16为一种低阻率的软材料。更可取的是，表示导线图形或层间通路图形的开口14要用金属化层16填充到比导线或通路表面低100至400nm的深度。应该明白，图4A-E、5A-E和7A-B表示的金属化16层应是上述相类的东西。
图2c表示出一种难熔金属17，诸如钨、钴、镍、钼，或合金/化合物，如Ti/TiN被淀积在该结构上。难熔金属17的淀积可以是一步CVD或两步工艺过程，而图4A-E作出最好的说明，其中第一步骤包括准直溅射或类似工艺淀积一层，增进粘合的化合物如钛或氮化钛，以形成共形的复盖涂膜，而第二步骤包括淀积一钨的薄CVD层，以达到高度的共形性。CVD淀积难熔金属最好用SH4或H2还原WF6来实现。尤其好的CVD工艺过程包括SiH4还原WF6后继之以H2还原WF6。因为，在TiN层的顶上，用SiH4还原WF6的CVD钨，生长平整，但用H2还原则不然。难熔金属17为底下开口14中的低电阻率软金属化层17提供耐磨损、抗侵蚀，以及抗电迁移的涂层。采用SiH4还原WF6做CVD特别优越，SiH4与WF6的比率可以改变，能把不同的硅量混入列钨中以达到有益的特性。举例来说，填充介质中的开口14时，以0.5SiH4比WF6的比率淀积难熔金属17应是更可取的，因为这么做会得到低阻难熔金属；但是，用于介质顶面的淀积，则按2.0SiH4对WF6的比率，因为这样得到的会混入更多的硅使难熔金属更耐磨损。利用上述的CVD技术，可用掺硅的钨作为抗磨损的涂层或抛光阻挡物(例如，化学-机械抛光中更能经受用硝酸铁的氧化铝粉悬浮液)。由于通过蒸发施加的金属化层16不会覆盖着开口14的侧壁，而CVD施加的难熔金属17却产生环绕金属化层16的锥状侧壁，且该金属化层16完全被密封在难熔金属17与底下难熔金属15之中。
图2D和2E表示CVD施加难熔金属17产生一种结构后被平整化了的结构，其中的两部分导电通路或导线包括中心的低阻软金属化层16及密封金属化层16的耐磨损硬难熔金属17，其顶面与衬底10上介质复合层的顶面一般齐。用悬浮液，诸如稀硝酸铁的氧化铝粉液化学-机械抛光，或在含SF6或者氯基的化学物中RIE，可以在一步或两步工序中完成平整化。如果采用化学-机械抛光法，则要选择能除去该叠层上不同金属层的悬浮液。举个例，用氧化铝粉的稀硝酸铁悬浮使能除去铜顶面上的Ti/TiN/W，然后。换用不含氧化铝粉的悬浮液就能除去留下的铜。
RIE除去难熔金属层17之后，结合用化学-机械抛光留下物金属化层16，预料也能留下无机或有机层13顶面上的难熔金属17，设想一种特定的平整化过程，包括或者用化学-机械抛光或者用SF6或Cl2基的化学物的RIE除去钨的难熔金属层17，直至如图2D所示的Al-Cu合金金属化层16的表面，然后，利用钨作掩模，刻蚀Al-Cu CVD层直到无机层13的表面，最后，介质表面留下的钨17或经抛光、湿法腐蚀或在Cl2中RIE腐蚀，就得到图2E所见的结构。
图4A到4E表示出本发明的另一种改型，与上面相同的类似构件在各图中均标以相同的标号。如图4A所示，铜金属化层16淀积在衬底上形成的无机或有机介质15产生的开口14中。图4A所示结构与图2B所示结构的主要区别在于，淀积铜金属化之前，准直溅射淀积一薄难金属金属层24，诸如钛、氮化钛(TiN)、钨、钽，或合金及其化合物盖在无机或者有机介质15的表面及开口14通路的内侧。
如上所述，对准直溅射，Rossnagel等的美国专利4,824,544已作概述，其中还讨论过剥离操作过程。本发明已经发现，采用准直溅射，在高压下散射占优势，相反在低压下定向性淀积占优势，可容许在大高宽比的亚微米级槽或通路内形成共形涂层(例如，侧壁和底面都被涂敷上)。高宽比，一般是指槽或通路的高度对沟槽的宽度或通路的直径之比。对高宽比大于2的槽或通路，通常认为具有大的高宽比。就准直溅射来说，高于1毫乇(mTorr)气压。散射往往占优势(最好在3毫乇(3mTorr)附近)，而低于1毫乇(1mTorr)，则定向淀积占优势。结合图5A-E和图6，下面将更详细地陈述准直溅射。
当用铜基合金金属化层16时，如图4A所示，用一难熔金属层24完全覆盖开口14的底面与侧壁就尤其重要，因为后续的高温处理会使铜扩散到衬底10中，如果不设置扩散阻挡层就会破坏器件。无论用蒸发PVD、准直溅射还是其它技术都可以淀积铜金属化层16。当要填充的是亚微米大高宽比的孔时，现有的CVD技术对用铝与铜基合金来填充这样的孔已经失败；因此，最好的填充方法是通过PVD技术。
淀积金属化层16之后，再把钛、Ti/TiN，钽或铬的薄层26施加在该铜金属化层16的表面，以增进粘结力。然后，通过CVD，用SiH4或H2还原WF6淀积难熔金属，如钨，产生图4B所示的结构，正如上面已解释的，CVD时可利用改变SiH4与WF6的比，以利于制成较硬，更耐磨损，靠近介质15的顶面的含硅钨层。界面上的薄层26应这样选择，即不会浸蚀底下的铜金属化层16。
图4c指明，首先经抛光或经RIE将钨平整化，而图4d表明，经湿法腐蚀，有选择地除去铜。如果要形成的是铜或铜合金线，以过氧化氢((H2O2)和四氧化氢(H2O4)为基的湿法腐蚀液来平整铜是有利的。室温下，这类溶液决不会腐蚀钨或介质，但会腐蚀掉位于介质上的所有的铜，因为没有保护铜不受湿法腐蚀液腐蚀(例如，在室温下，H2O2几乎有无限的选择性。图4e表明，湿法腐蚀后，该钨17可以用RIE、抛光或其它技术有选择地除去。除去难熔金属17钨的可取方法，是用氧化铝粉的硝酸铁悬浮液之类化学-机械抛光介质15表面之上的凸出物，因为钨是一种很硬的材料，经受化学-机械抛光时，不会受擦伤或侵蚀。上面详述的决不是三步工序的方法，更可取的是用化学-机械抛光一步工序，以除去钨的难熔金属17、薄层26的粘结增进层，以及位于绝缘物15表面上的铜金属化层16。
图5A至图5E表示本发明还有一种改型，其中同样的标号指同样的结构。图5A表明，在用准直溅射，如Rossnagel等人在J.Vac.Sci.Technol.2,261(mar/Apr.1991)和美国专利4,824,544合并参照的准直溅射法，以全部或局部的共形方式金属化之前，在开口14内淀积一层难熔金属衬垫28。准直溅射时，在气压大于0.5毫乇(mTorr)下，难熔金属原子穿过深度对面积的高宽比大于1的蜂窝状结构。表1给出已用于衬垫淀积的条件。
                       表1
                  准直淀积衬垫
高宽比             复盖高差厚度    底部/顶面(％)
             侧壁/顶面(％)
1∶1              38         60
1∶2              39         70
1∶4              42         100
非准直
  0              10          12在表1所给出的研究中，压力从0.5毫乇mT变到15毫乇mT，而功率从0.5千瓦变到12千瓦。表1清楚地指出，不用准直溅射时的恶劣复盖高差厚度比。采用较高的气压(如，3毫乇)而准直器的高宽比至小1∶1用Ti/TiN或Ti/W双层来涂敷高宽比大于7至8的通路或接触孔，所得到的复盖高差厚度比，对底面大于40％，对侧壁大于30％，对本技术领域来说，这是很大进步，因此容许半导体制造者在大高宽比的通路或槽中制备共形层，将增强CVD钨的粘结力。并且，正如下面将详加陈述的，制成的TiN或其它合适材料的共形层将给铜基合金提供一种有效的扩散阻挡层。如上所述，为了充份地覆盖槽或通路的侧壁及底部，应采用散射淀积占优势的气压(如，高于1毫乇)，而不应采用定向淀积居优势的低气压。
如上所述，图6呈见的是一幅PVD准直溅射在通路中产生的一个难熔金属衬垫的SEM显微照片。图6表明，能够实现通路底部及侧壁的完全覆盖，用N2等离子，与氩一起在钛靶下，就地淀积TiN。该衬垫能改善粘结力及防止CVD钨对底下衬底的任何浸蚀。当准直器的高宽比增大时，衬垫的共形度也增加了。
如把铜导线或通路用之于该结构，就需要坚固的衬垫用作扩散阻挡层。低压准直溅射的难熔金属衬垫(如，Ta、Ti/TiN，或Ti/W等)会在介质中开口14的侧壁上造成一种多孔的结构。为防止这种多孔结构，而在侧壁上制出致密的结构，要采取两步准直工序。详细说，第一步骤，用低于0.8毫乇的气压淀积一薄的衬垫层，达到底高大于60％的覆盖范围，而第二步骤，原处不动，将气压增至3到4毫乇，使用相同的准直器，在侧壁上得到一种致密的微结构。本发明之前，没有一种方法能够在很大的高宽比的亚微米孔中，尤其在低温下，形成一种衬垫。这些结果，类似于用Ti/W和Ti/TiN双层衬垫做CVD难熔金属17或低阻软金属的扩散阻挡层。
图5B-E表示出本发明另一种改型中，实施类似于图2B-E和图4A-E表示的那些工序。与图4A相似，图5B示明有一种粘结增进剂层26，诸如Ti、Cr、Ta、Ti/N之类，用PVD蒸发淀积，盖在难熔金属衬底顶上与间隙14的底部。与图2B相似，图5B示明，通过PVD蒸发技术将Al-Cu合金或别的金属化层16淀积到介质层表面以下100至400nm的水平位置。图5C-E分别表示出淀积共形层钨或其他难熔材料，以覆盖低阻金属化层16，通过RIE或抛光平整化钨，等等之类，而平整化该结构可用H2O2湿法腐蚀铝-铜合金之后，接着化学-机械抛光钨的两步工序如图4c和4d所示，或者通过RIE或化学-机械抛光的一步工序简单地加以平整化。关于一步工序化学-机械抛光。悬浮液可采用与用于抛光钨相同的悬浮液。类似图2E所示结构，图5E所示的结构有密封着低阻金属化层16的CVD难熔金属17，还有一锥形的难熔金属17区。
图7A和7B表示本发明的再一种改型，其中相同的标号相同的构件。正如图7A所示，不论共形的，以难熔金属为好的衬垫/扩散阻挡层28，还是共形的AlxCuy或其它合适的材料的低阻合金或金属化层16都用PVD准直溅射淀积在衬底10的无机或有机介质的开口中，接着，CVD淀积难熔金属17覆盖层，诸如钨、钛、钽、之类包覆该结构。图7B示出经RIE，化学-机械抛光或其它技术使之平整化了的结构。将图73的结构与图5E的结构予以对比，可以看出，通路或导线的形状是很不同的。虽然，两种结构都包含一个由难熔金属17包覆的低阻金属层16，但这两种金属化很可能适用于不同的环境。
已经用按上面陈述的技术制造的难熔金属包覆的导线进行实验检测，实验中，该导线长度从13.45cm变到50cm，芯片面积接近1.6mm2。金属间距从1μm变到2μm。要填充的孔的高宽比为2至8，而导线为2到4。
                          表2
      抛去后，钨覆盖的低电阻率金属导线的电阻a(A)采用蒸发形成的b
结构         电阻      电阻 成品率
    淀积钨前      淀积w后
                  Ti(20nm)/TiN(35nm)/Al-Cu(800nm)/W(200nm)0.042         0.04                      95％Ti(20nm)/Al-Cu(800nm)/W(200nm)0.042         0.052                     95％Ti(20nm)/Al-Cu(800nm)/Ti(20nm)/W(200nm)0.042         0.054                     94％Ti(20nm)/TiN(25nm)/CVDW(30nm)/Al-Cu(1300nm)/W(200nm)0.025         0.023                     97％Ti(50nm)/TiN(25nm)/Ti(20nm)/Al-Cu(1300nm)/Ti(20nm)/TiN(20nm)/W(200nm)0.025         0.032                     96％Ti(50nm)/TiN(50nm)/Ti(50nm)/Al-Cu(600nm)/Ti(20nm)/Cu(700nm)/Ti(20nm)/TiN(20nm)/CVDWW(200nm)0.023         0.021                     100％(B)采用准直溅射形成的cTi(20nm)/TiN(35nm)/Al-Cu(800nm)/CVD W(200nm)0.042         0.04                      84％Ti(20nm)/Al-Cu(800nm)/CVDW(200nm)0.042         0.05                      81％Ti(20nm)/W(20nm)/Al-Cu(800nm)/CVDW(200nm)0.040         0.039                     85％Ti(20nm)/TiN(75nm)/Cu(800nm)/Ti(20nm)/TiN(25nm)/CVDW(200nm)0.024         0.022                     80％(C)采用非准直溅射形成的dTi(20nm)/TiN(35nm)/Al-Cu(800nm)/CVDW(200nm)0.040         0.04                      86％
a)全部实验中，导线的长度从13.5cm变到50cm，芯片面积接近1.6mm2。金属间距从1μm变到2μm。填充孔的高宽比为2至8，以及对导线为2至4。
b)蒸发实验中，用准直溅射淀积Ti/TiN双层。
c)准直高宽比为1∶1。
d)溅射的气压范围在0.5至0.8毫乇间。
表2的结果表明，新技术加工的成品率很高，并且导线电阻不因有钨的包覆而变化较大。某些上面的数据表明，Al-Cu合金下面有钛时，电阻增大了，这是由于界面处形成TiAl3的缘故。还发现，在钛与铝-铜层之间设置一层钛合金或化合物(例如，TiN)可以防止形成TiAl3，因而仍能保持电阻较小。表2末尾的项目表明，如果采用非准直溅射法，即该种溅射应在低气压(例如，低于1毫乇)下进行，也就是定向溅射占了优势。
可以预料，在化学-机械抛光之后，对难熔金属覆盖层施行RIE，用H2O2，或H2O4作湿法腐蚀，把该覆盖层的厚度降至最起码的层厚限度。一层厚的难熔金属会增加不希望有的电容。之所以考虑用后抛光湿法腐蚀或RIE过程，使半导体设计者有可能用厚的难熔金属及为其底下的低阻Al-Cu导线或通孔在化学-机械抛光时提供最大的保护，还能随后除去任何过剩的难熔金属，实现难熔金属覆盖很薄的一种结构，举例说，可敷设一层500-600nm厚的难熔金属，用双抵挡抛光损伤，而后，通过湿法腐蚀或RIE，可以再把难熔金属层降至50nm的层厚。
图8显示出一多层半导体器件的实例，该器件包括一几乎与绝缘层顶面齐平的有钨覆盖的AlxCuy合金导线的顶面。如上面详细陈述的那样，CVD钨的通路或槽，最好包含一准直溅射以增进粘结力的TiN衬垫。在本发明的实际范围内，还可制造出许多其它半导体器件。
图9A和9B是一种半导体器件的剖面SEM显微照片。图9A显示了由SiO2之间和顶部以Al-Cu合金隔开，从硅表面向上伸出的SiO2部分。而Al-Cu合金之间及顶上为CVD钨层。图9A是表示抛光前，有盖层导线的一种结构。图9B则显示化学-机械抛光除去SiO2伸出部分顶面上的钨与Al-Cu合金后的多层结构剖面的SEM显微照片。
虽然本发明是用最佳实施例来描述，但本领域的技术人员均应认识到，后附的权利要求书的精神与范围内的修改都可实施本发明。

Claims (12)

1．一种器件，包括一衬底、至少一层位于所述衬底上的介质层，以及位于所述至少一层介质上的一个开口内的金属化部分；其中
所述金属化部分从与所述至少一层介质层朝向所述衬底的一个表面共平面的表面伸出；以及
所述金属化部分由被至少一种难熔金属或合金密封的低电阻率金属或合金组成，
其特征在于：
所述低电阻率金属或合金的侧壁互相朝着所述金属化部分与所述至少一层介质的表面共面的那部分表面向内逐渐变细。
2．一种按照权利要求1的器件，其特征在于：所述至少一种难熔金属或合金选自包括钛、钨、钽和铬及其合金、导电氧化物、氮化物和硅化物组成的组。
3．一种按照权利要求1的器件，其特征在于：所述低电阻率金属合金是铝或铜的二元或三元合金。
4．一种按照权利要求1的器件，其特征在于：所述低电阻率金属是一种通式为AlxCuy的铝和铜的合金，其中x与y之和等于1，且x和y两者都大于或等于0。
5．一种按照权利要求1的器件，其特征在于：所述至少一种难熔金属或合金在所述金属化部分表面附近部位的掺硅量比紧靠衬底部位的掺硅量高。
6．一种按照权利要求1的器件，其特征在于：所述金属化部分完全穿过所述介质层并与所述衬底接触。
7．一种按照权利要求1的器件，其特征在于：所述难熔金属或合金衬垫位于所述介质层与所述低电阻率金属或合金之间的所述开口中。
8．一种按照权利要求1的器件，其特征在于：还包括位于所述低电阻率金属或合金的至少一部分和所述难熔金属之间的导电粘结层。
9．一种制造器件的方法，该器件具有位于形成在一衬底上的至少一层介质层内的开口之中的金属化部分，该方法包括：在位于衬底上的介质层中形成具有顶部及底部的开口的步骤；其特征在于还包括下列步骤：
在所述介质的顶面和所述开口的底部淀积第一难熔金属或合金化合物；
淀积低电阻率金属或合金，使其覆盖在所述介质的所述顶面和所述开口的所述底面上的所述难熔金属之上，直至一低于所述开口的所述顶部的位置；
淀积第二难熔金属或合金，使其覆盖在形成于所述介质的所述顶面上和所述开口所述底部的所述难熔金属之上的所述低电阻率金属或合金上；以及，
从所述介质层的顶面上除去所述第一难熔金属或合金或化合物、所述低电阻率金属或合金，以及所述第二难熔金属或合金，从而产一种平面结构，该结构包括一个具有借助于所述介质层平整化了的难熔金属或合金所覆盖的低电阻率金属或合金的金属化部分部位。
10．一种按照权利要求9的方法，其特征在于：淀积所述第一难熔金属或合金或化合物的步骤是用准直溅射实现的，并形成一衬垫，使其与所述开口的所有内侧表面和所述介质的所述顶面整合。
11．一种按照权利要求10的方法，其特征在于：所述准直溅射是由以下各步骤进行的：
在发生定向淀积的第一气压下，通过准直器把第一薄层所述难熔金属、合金或化合物溅射到所述开口中；以及
在发生散射淀积的第二气压下，通过准直器将第二薄层所述难熔金属、合金或化合物溅射到所述开口中，覆盖在所述第一薄层上。
12．一种按照权利要求11的方法，其特征在于：进行所述第一溅射步骤的所述第一气压低于1毫乇，而进行所述第二溅射步骤的第二气压高于1毫乇。
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KR0134122B1 (ko) 1998-04-20
CN1192050A (zh) 1998-09-02
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US5300813A (en) 1994-04-05
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CN1081390C (zh) 2002-03-20
US5403779A (en) 1995-04-04
SG105511A1 (en) 2004-08-27
CN1192040A (zh) 1998-09-02
EP0788156A2 (en) 1997-08-06
CN1120241A (zh) 1996-04-10
US5585673A (en) 1996-12-17
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SG70043A1 (en) 2000-01-25
US6323554B1 (en) 2001-11-27
CN1112730C (zh) 2003-06-25
KR930018660A (ko) 1993-09-22
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CN1076548A (zh) 1993-09-22
CN1192049A (zh) 1998-09-02
EP0966037A2 (en) 1999-12-22
KR0134120B1 (ko) 1998-04-20
US6147402A (en) 2000-11-14
US5426330A (en) 1995-06-20
EP0788156A3 (en) 1998-04-15
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JPH05343532A (ja) 1993-12-24
US5976975A (en) 1999-11-02
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US5889328A (en) 1999-03-30
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