CN104624462A - Method for manufacturing variable-frequency variable-focus energy converter for ultrasonic scanning microscope - Google Patents

Method for manufacturing variable-frequency variable-focus energy converter for ultrasonic scanning microscope Download PDF

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Publication number
CN104624462A
CN104624462A CN201410842593.6A CN201410842593A CN104624462A CN 104624462 A CN104624462 A CN 104624462A CN 201410842593 A CN201410842593 A CN 201410842593A CN 104624462 A CN104624462 A CN 104624462A
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different
variable
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ultrasonic
self
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CN104624462B (en
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肖会芳
陈丹
徐金梧
杨荃
黎敏
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University of Science and Technology Beijing USTB
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University of Science and Technology Beijing USTB
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Abstract

The invention relates to the field of ultrasonic scanning microscope detection and the field of ultrasonic imaging, in particular to a method for manufacturing a variable-frequency variable-focus energy converter for an ultrasonic scanning microscope. The method is characterized by comprising the steps that 1, five self-focusing curved surfaces different in curvature radius are obtained from monocrystalline silicon based on a micro-machining technology; 2, ZnO piezoelectric film wafers with five kinds of different thicknesses are deposited on the self-focusing curved surfaces respectively through a low-pressure chemical vapor deposition method, and films are separated from each other; 3, the ZnO piezoelectric film wafers are selectively excited through electrodes led out independently, and ultrasonic waves with tunable frequency are obtained; 4, the piezoelectric film wafers with the five kinds of different thicknesses are packed into a whole, and are connected through an SAM electronic connector to form the variable-frequency variable-focus energy converter. Five kinds of different focal lengths are obtained through the self-focusing curved surfaces with five kinds of different curvature radiuses, the piezoelectric film wafers of any thickness are selectively excited through the electrodes led out, and the variable-frequency variable-focus function of the ultrasonic energy converter can be achieved.

Description

A kind of for ultrasonic scanning microscopical variable ratio frequency changer zoom transducer preparation method
Technical field
The present invention relates to ultrasonic scanning microscopic examination field and ultrasonic imaging field, especially a kind of for ultrasonic scanning microscopical variable ratio frequency changer zoom transducer preparation method
Background technology
Ultrasonic scanning microscope mainly adopts pulse return pattern work, is one of important tool for carrying out the inner micro-detection of material and imaging research, is widely used in medical science at present, during the micro-imaging of electronics industry and metallurgical industry detects.For different detected objects and imaging requirements (as detected the degree of depth, can flaw size being examined), need the frequent transducer changing different frequency and different focal just can reach optimal Detection results.So not only reducing detection efficiency, further increasing the position error caused by dismounting, installation, for accurately judging that the position of defect is totally unfavorable.The frequency conversion zoom technology realizing ultrasonic transducer is the comparatively effective method that solves the problem, and greatly can improve the serviceability of ultrasonic microscope, significant for the micro-imaging under different resolving power.
Current ultrasonic scanning microscope many employings single-chip PZT (piezoelectric transducer) realizes hyperacoustic launching and receiving.Ultrasonic transducer, as the most crucial components and parts of ultrasonic scanning microscope, directly decides the ultrasound signal characteristics and the microscopical detection resolving power of ultrasonic scanning of launching, thus directly affects the microscopical detection image quality of ultrasonic scanning.Focused transducer is except adopting acoustic lens to realize and focusing on, and main employing self-focusing curved surface realizes the focusing of high-frequency ultrasonic.But, above-mentioned transducer particularly high frequency focused transducers, although the ultrasonic wave in broadband can be produced, but because the thickness of its piezoelectric chip and the radius of curvature of self-focusing curved surface immobilize, the pinpointed focus making other frequency content outside centre frequency cannot obtain the energy threshold needed for detection and match, therefore cannot realize the frequency conversion zoom function of focused transducer by single-chip and single self-focusing curved surface.
The mode that the present invention adopts the piezoelectric membrane wafer of five kinds of different-thickness to combine with the self-focusing curved surface of five kinds of different curvature radius synthesizes a transducer, and encourages the piezoelectric membrane wafer of wherein any thickness can realize the frequency conversion zoom object of ultrasonic transducer by the Electrode selectivity of drawing separately.Adopt this frequency conversion zoom transducer when detecting sample, just centre frequency and the focal length size of concentration ultrasonic can be changed without the need to frequently changing transducer, realize the scanning imagery of different depth and different resolving power fast, thus effectively can avoid owing to changing transducer and cause detection efficiency low, the problem of defect location difficulty.
Three, summary of the invention
The object of this invention is to provide a kind of for ultrasonic scanning microscopical variable ratio frequency changer zoom transducer preparation method.
Implementation step of the present invention is as follows:
1) employing miromaching obtains five self-focusing curved surfaces that radius of curvature changes successively on the monosilicon, and radius of curvature is determined by the focal length size of concentration ultrasonic;
2) utilize Low Pressure Chemical Vapor Deposition on above-mentioned self-focusing curved surface, deposit the ZnO piezoelectric film wafer obtaining five kinds of different-thickness respectively, be separated from each other between the ZnO film of different-thickness;
3) on the front-back of five kinds of different-thickness ZnO piezoelectric film wafers, Au top electrode and Al bottom electrode is drawn respectively by miromaching;
4) by as a whole for the ZnO piezoelectric film wafer package of five kinds of different-thickness, and the transducer of frequency conversion zoom is connected to form with SAM electric power connector.
Advantage of the present invention
Realizing the defects detection under material internal different depth and different resolving power and imaging function when not changing transducer, not only can improve detection efficiency, and the positioning precision of tiny flaw can be improved.
Accompanying drawing explanation
The structural representation of Fig. 1 frequency conversion zoom PZT (piezoelectric transducer);
The structural design schematic diagram of Fig. 2 self-focusing curved surface;
The top view of Fig. 3 self-focusing curved surface;
The perspective view of Fig. 4 frequency conversion zoom transducer;
Four, specific embodiments:
Below in conjunction with accompanying drawing, take variable frequency range as 100MHz-200MHz, zooming range is 2mm-8mm PZT (piezoelectric transducer) is made as example, design of the present invention is described in detail, but not as limiting to the invention.Fig. 1 is the structural representation of frequency conversion zoom PZT (piezoelectric transducer), mainly comprises front matching layer 1, piezoelectric membrane wafer 2, positive and negative electrode 3, backing and mechanical support layer 4, metal shell 5, sidewall epoxy fixed bed 6 and SAM electric power connector 7.Wherein, piezoelectric membrane wafer 2 is improved to five different piezoelectric membrane wafers of thickness by traditional single-chip, and front matching layer has the different self-focusing curve form of radius of curvature, and ultrasonic wave realizes focusing function through after this structure.
To specifically provide the detailed manufacturing process of frequency conversion zoom PZT (piezoelectric transducer) below:
1. adopt Low Pressure Chemical Vapor Deposition to deposit the silicon nitride layer of 0.3 μm on the monosilicon;
2. adopt the way of ion reaction etching to remove partial silicon nitride, thus reserve circular open at assigned address, opening diameter is as the 2r in Fig. 2 ishown in, i is the wafer number in table 1;
3. adopt the KOH solution of 80 DEG C to corrode the through hole of different sizes as shown in Figure 2 at the opening part of above-mentioned monocrystalline silicon;
4. diameter is respectively R i(i=1,2,3,4,5), roughness is that five stainless steel beads of less than 0.1 μm are placed on above above-mentioned manhole;
5. the paraffin that employing is melted fills the space below bead, is removed by bead again, obtain the self-focusing curved surface of five kinds of different curvature radius, as shown in Figure 3 after paraffin cooled and solidified;
6. by the Parylene even application of 8 μm of thickness on above-mentioned self-focusing curved surface;
7. use toluene solution to remove unnecessary paraffin, the bottom of sphere curved surface is vacated completely;
8., according to the ultrasonic wave centre frequency (as shown in table 1) of required acquisition, on the sphere curved surface of five kinds of different curvature, deposit thickness is the Al bottom electrode of 0.5 μm successively respectively, and thickness is respectively t ithe ZnO piezoelectric film of (i=1,2,3,4,5) and thickness are the Au top electrode of 0.5 μm, and the thickness of ZnO piezoelectric film equals the half of compressional wave wavelength in film;
9. adopt the way of oxygen reactive ion etching to remove Parylene, be particularly covered in the Parylene of Al bottom electrode;
10. adopt electronic solder silver epoxy as back lining materials, be filled in the wire chamber that formed by aluminium oxide;
The piezoelectric membrane wafer of five different-thickness as front matching layer, and is fixed on the inwall of wire chamber by the Parylene of 11. depositions, 3 μm of thickness as a whole with epoxy, then encapsulate with SAM electric power connector.
As shown in Figure 4, corresponding basic design parameters is as shown in table 1 below for the perspective view of frequency conversion zoom PZT (piezoelectric transducer).

Claims (2)

1., for a ultrasonic scanning microscopical variable ratio frequency changer zoom transducer preparation method, it is characterized in that comprising following steps:
1. adopt micromachined to obtain the different self-focusing curved surface of five kinds of radius of curvature on the monosilicon, radius of curvature is determined by the focal length of concentration ultrasonic;
2. on the self-focusing curved surface of above-mentioned different curvature radius, deposition obtains the ZnO piezoelectric film wafer of five kinds of different-thickness respectively, and the thickness of thin film wafers is determined by formula t=ncp/2f, wherein n=1,3,5 ..., cp is the longitudinal wave velocity in piezoelectric chip, and f is the resonant frequency of piezoelectric chip;
3. select Au and Al as the front and back electrode of PZT (piezoelectric transducer) respectively, drawn on the front-back of each ZnO piezoelectric film wafer respectively by miromaching;
4. by as a whole for the piezoelectric membrane wafer package of five kinds of different-thickness, and the PZT (piezoelectric transducer) of variable ratio frequency changer zoom is connected to form with SAM electric power connector.
2. the one as described in claim power is used for ultrasonic scanning microscopical variable ratio frequency changer zoom transducer preparation method, it is characterized in that described radius of curvature is determined by the focal length of concentration ultrasonic.
CN201410842593.6A 2014-12-30 2014-12-30 One kind is used for the microscopical variable ratio frequency changer zoom transducer preparation method of ultrasonic scanning Expired - Fee Related CN104624462B (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105127081A (en) * 2015-08-21 2015-12-09 广州丰谱信息技术有限公司 Preparing method for broadband ultrasonic transducer and signal sending method
CN110448332A (en) * 2019-09-12 2019-11-15 深圳市索诺瑞科技有限公司 A kind of universal ultrasonic transducer

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5015929A (en) * 1987-09-07 1991-05-14 Technomed International, S.A. Piezoelectric device with reduced negative waves, and use of said device for extracorporeal lithotrity or for destroying particular tissues
US6057632A (en) * 1998-06-09 2000-05-02 Acuson Corporation Frequency and bandwidth controlled ultrasound transducer
CN1647829A (en) * 2005-02-03 2005-08-03 上海交通大学 Focal domain controllable focusing supersonic transducer
CN101569882A (en) * 2009-06-16 2009-11-04 北京理工大学 Linear ultrasonic phased array transducer

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5015929A (en) * 1987-09-07 1991-05-14 Technomed International, S.A. Piezoelectric device with reduced negative waves, and use of said device for extracorporeal lithotrity or for destroying particular tissues
US6057632A (en) * 1998-06-09 2000-05-02 Acuson Corporation Frequency and bandwidth controlled ultrasound transducer
CN1647829A (en) * 2005-02-03 2005-08-03 上海交通大学 Focal domain controllable focusing supersonic transducer
CN101569882A (en) * 2009-06-16 2009-11-04 北京理工大学 Linear ultrasonic phased array transducer

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105127081A (en) * 2015-08-21 2015-12-09 广州丰谱信息技术有限公司 Preparing method for broadband ultrasonic transducer and signal sending method
CN105127081B (en) * 2015-08-21 2018-01-02 广州丰谱信息技术有限公司 A kind of broad-band ultrasonic transducer preparation method and signaling method
CN110448332A (en) * 2019-09-12 2019-11-15 深圳市索诺瑞科技有限公司 A kind of universal ultrasonic transducer

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