CN104810452A - Light-emitting element - Google Patents

Light-emitting element Download PDF

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Publication number
CN104810452A
CN104810452A CN201410344692.1A CN201410344692A CN104810452A CN 104810452 A CN104810452 A CN 104810452A CN 201410344692 A CN201410344692 A CN 201410344692A CN 104810452 A CN104810452 A CN 104810452A
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light
gallium nitride
ingan
photonic crystal
type semiconductor
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Chinese (zh)
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赖俊峰
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Feng Chia University
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Feng Chia University
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0083Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures

Abstract

The present invention provides a light-emitting element comprising a first electrode, a conductive substrate, a metal reflecting layer, a p-type semiconductor layer, a light-emitting layer, an N-type semiconductor layer, three-dimensional log pile-shaped photonic crystals, and a second electrode, wherein the above parts are successively stacked up. Photonic band gaps exist among the three-dimensional log pile-shaped photonic crystals to limit the direction of light propagation. Based on the above design, the light is only enabled to propagate in the vertical direction, so that the loss of the light in the horizontal direction is avoided. The light emitting efficiency is improved. A fluorescent layer is added. The nano-phosphor powders of the fluorescent layer or the quantum dot florescent materials of the fluorescent layer are filled in the photonic band gaps. The light-emitting spectrum is modulated by the three-dimensional log pile-shaped photonic crystals. In this way, the light-emitting element is high in light-emitting efficiency and adjustable in color-changing temperature, and the color-rendering performance of the light-emitting element is improved.

Description

Light-emitting component
Technical field
The invention relates to a kind of light-emitting component, on the n type semiconductor layer of rectilinear blue light-emitting diode, espespecially make the composite structured light-emitting component of one of three-dimensional yard shape photonic crystal.
Background technology
Generally speaking, light-emitting diode (Light-Emitting Diode, LED) there is power saving and compact characteristic, master is applied as with guidance lighting, decorative lighting, mobile phone backlight, but along with source efficiency constantly promotes, start to be applied to display, parts of traditional automotive lighting, architectural lighting and part room lighting, progressively replace existing incandescent lamp and fluorescent lamp.But industry blue light diode luminous efficiency is low at present, and white light-emitting diodes will become lighting source and needs luminous efficiency to be more than 150lm/W for best, and the luminous efficiency of the white light-emitting diodes of manufacturer generally only has 100lm/W both at home and abroad, luminous efficiency is obviously not enough.Known light-emitting diode utilizes the means of reflection or refraction to concentrate the light distributed, but the light that luminescent layer produces can only in element internal total reflection, and cannot bright dipping effectively, thus most of light wave is restricted to the inside of light-emitting diode, until absorbed completely by the material in light-emitting diode, therefore make light ejection efficiency not good, cause the problem that luminous efficiency reduces.
Summary of the invention
Therefore not good for solving known light emitting diode light ejection efficiency, cause the problem that luminous efficiency reduces, the present invention proposes a kind of light-emitting component, a rectilinear blue light-emitting diode crystal grain is used to work as substrate, and on the n type semiconductor layer of blue light-emitting diode crystal grain, make three-dimensional yard shape photonic crystal form composite structured light-emitting component, not only can avoid luminous loss improving luminous efficiency, and a fluorescence coating or a fluorescence can be added, utilize three-dimensional yard shape photonic crystal modulation colour temperature, and then promote the color rendering of light-emitting component.
A light-emitting component of the present invention, comprises one first electrode; One electrically-conductive backing plate, is configured on this first electrode; One metallic reflector, is configured on this electrically-conductive backing plate; One p type semiconductor layer, is configured on this metallic reflector; One luminescent layer, is configured on this p type semiconductor layer; One n type semiconductor layer, is configured on this luminescent layer; One three-dimensional yard shape photonic crystal, is made on this n type semiconductor layer, and one second electrode, is configured on this three-dimensional yard shape photonic crystal, forms this composite structured light-emitting component.And this light-emitting component more can comprise a fluorescence coating further, this fluorescence coating is configured on this three-dimensional yard shape photonic crystal.
Wherein the material of this electrically-conductive backing plate can be silicon (Si), carborundum (SiC), zinc sulphide (ZnS), zinc selenide (ZnSe), electro-coppering or plating multiple layers metal.The material of this metallic reflector can be the combination of platinum, gold, silver, copper, aluminium, nickel, titanium, chromium, palladium or more metal and alloy.The material of this p type semiconductor layer can be gallium nitride (GaN), InGaN (InGaN), gallium nitride based or nitride-base semiconductor.The material of this n type semiconductor layer can be gallium nitride (GaN), InGaN (InGaN), gallium nitride based or nitride-base semiconductor.The material of this luminescent layer can be InGaN (InGaN) and gallium nitride (GaN), aluminium gallium nitride alloy and gallium nitride (AlGaN/GaN), the multi layer quantum well of aluminum gallium arsenide and GaAs (AlGaAs/GaAs) or carborundum (SiC).The material of this fluorescence coating can be nanometer luminous organic material, nanophosphors material, fluorescent dye, fluorescein stain, nano-phosphor or quantum dot fluorescence material.
And the material of this three-dimensional yard shape photonic crystal can be selected from semiconductor material, an organic polymer, an inorganic polymer, an organic compound, an inorganic compound, a metal or its combination.Wherein this semi-conducting material can be gallium nitride, InGaN, indium gallium, aluminium gallium nitride alloy, aluminum gallium arsenide, GaAs or its combination; This organic polymer can arrange for polystyrene, polymethyl methacrylate series, poly is serial, PLA is serial, the macromolecule of the sour series of polyamine group or its combination; This inorganic compound can be Ag 2o, CuO, ZnO, CdO, NiO, PdO, CoO, MgO, SiO 2, SnO 2, TiO 2, ZrO 2, HfO 2, ThO 2, CeO 2, CoO 2, MnO 2, IrO 2, VO 2, WO 3, MoO 3, Al 2o 3, Y 2o 3, Yb 2o 3, Dy 2o 3, B 2o 3, Cr 2o 3, Fe 2o 3, Fe 3o 4, V 2o 5, Nb 2o 5, ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, FeS, FeSe, FeTe, CoS, CoSe, CoTe, NiS, NiSe, NiTe, PbS, PbSe, PbTe, MnS, MnSe, MnTe, SnS, SnSe, SnTe, MoS 2, MoSe 2, MoTe 2, WS 2, WSe 2, WTe 2, Cu 2s, Cu 2se, Cu 2te, Bi 2s 3, Bi 2se 3, Bi 2te 3, SiC, TiC, ZrC, WC, NbC, TaC, Mo 2c, BN, AlN, TiN, ZrN, VN, NbN, TaN, Si 3n 4, Zr 3n 4or its combination; This metal can be Au, Ag, Cu, Fe, Co, Ni, Pd, Pt, Al, Si, Ti, Zr, V, Nb, Mo, W, Mn or its combination.In this three-dimensional yard shape photonic crystal 70, every layer of post height h is 100nm ~ 10 μm, and the wide w of post is 100nm ~ 10 μm, and intercolumniation a is 100nm ~ 10 μm, and in vertical direction, at least every two layers is a combined cycle c, and its value is 100nm ~ 10 μm.
The present invention also provides a kind of light-emitting component, comprises one first electrode; One electrically-conductive backing plate, is configured on this first electrode; One metallic reflector, is configured on this electrically-conductive backing plate; One p type semiconductor layer, is configured on this metallic reflector; One luminescent layer, is configured on this p type semiconductor layer; One n type semiconductor layer, is configured on this luminescent layer; One three-dimensional yard shape photonic crystal, a fluorescence is filled in its air gap, and this three-dimensional yard shape photonic crystal is made on this n type semiconductor layer, and one second electrode, is configured on this three-dimensional yard shape photonic crystal.Wherein the material of this fluorescence can be nanometer luminous organic material, nanophosphors material, fluorescent dye, fluorescein stain, nano-phosphor or quantum dot fluorescence material.
Therefore, this composite structured light-emitting component of the present invention, wherein this three-dimensional yard shape photonic crystal has photonic bandgap, the direction of propagation of light can be limited, light can be allowed only to propagate in the vertical direction via design, and avoid the loss of light in the horizontal direction, and then promote its luminous efficiency, this light-emitting component of blue light of high-luminous-efficiency can be obtained.In addition, also can add this fluorescence coating further at this this composite structured light-emitting component, nanometer luminous organic material in this fluorescence coating, nanophosphors material, fluorescent dye, fluorescein stain, the white light source packaging body forming this light-emitting component in this three-dimensional yard shape photonic crystal gap inserted by nano-phosphor or quantum dot fluorescence material, or this fluorescence is filled in this three-dimensional yard shape photonic crystal gap of this this composite structured light-emitting component, after this three-dimensional yard shape photonic crystal modulation white-light emitting spectrum, this light-emitting component of white light with high-luminous-efficiency and adjustable color temperature can be obtained, and then promote its color rendering.
Accompanying drawing explanation
Fig. 1 is blue light emitting component structure schematic diagram of the present invention.
Fig. 2 is one embodiment of the invention three-dimensional yard shape photon crystal structure schematic diagram.
Fig. 3 (a) is another embodiment of the present invention three-dimensional yard shape photonic crystal electron microscope vertical view.
Fig. 3 (b) is another embodiment of the present invention three-dimensional yard shape photonic crystal electron microscope end view.
Fig. 4 is the white light emitting element structural representation of one embodiment of the invention.
Fig. 5 is the white light emitting element structural representation of another embodiment of the present invention.
Fig. 6 is the broken line graph that white light emitting element of the present invention uses difference before and after three-dimensional yard shape photonic crystal.
Embodiment
Fig. 1 is blue light emitting element 1 structural representation of the present invention, and Fig. 2 is one embodiment of the invention three-dimensional yard shape photonic crystal 70 structural representation.Light-emitting component 1 of the present invention, comprises one first electrode 10; One electrically-conductive backing plate 20, is configured on this first electrode 10; One metallic reflector 30, is configured on this electrically-conductive backing plate 20; One p type semiconductor layer 40, to be configured on this metallic reflector 30; One luminescent layer 50, is configured on this p type semiconductor layer 40; One n type semiconductor layer 60, is configured on this luminescent layer 50; One three-dimensional yard shape photonic crystal 70, is made on this n type semiconductor layer 60; One second electrode 80, is configured on this three-dimensional yard shape photonic crystal 70.
Wherein the material of this electrically-conductive backing plate 20 can be silicon (Si), carborundum (SiC), zinc sulphide (ZnS), zinc selenide (ZnSe), electro-coppering or plating multiple layers metal.The material of this metallic reflector 30 can be the combination of platinum, gold, silver, copper, aluminium, nickel, titanium, chromium, palladium or more metal.The material of this p type semiconductor layer 40 can be gallium nitride (GaN), InGaN (InGaN), gallium nitride based or nitride-base semiconductor.The material of this n type semiconductor layer 60 can be gallium nitride (GaN), InGaN (InGaN), gallium nitride based or nitride-base semiconductor.The material of this luminescent layer 50 can be multi layer quantum well or the carborundum (SiC) of InGaN/gallium nitride (InGaN/GaN), aluminium gallium nitride alloy/gallium nitride (AlGaN/GaN) or aluminum gallium arsenide/GaAs (AlGaAs/GaAs).
And the material of this three-dimensional yard shape photonic crystal 70 can be selected from semiconductor material, an organic polymer, an inorganic polymer, an organic compound, an inorganic compound, a metal or its combination.Wherein this semi-conducting material can be gallium nitride, InGaN, indium gallium, aluminium gallium nitride alloy, aluminum gallium arsenide, GaAs or its combination; This organic polymer can arrange for polystyrene, polymethyl methacrylate series, poly is serial, PLA is serial, the macromolecule of the sour series of polyamine group or its combination; This inorganic compound can be Ag 2o, CuO, ZnO, CdO, NiO, PdO, CoO, MgO, SiO 2, SnO 2, TiO 2, ZrO 2, HfO 2, ThO 2, CeO 2, CoO 2, MnO 2, IrO 2, VO 2, WO 3, MoO 3, Al 2o 3, Y 2o 3, Yb 2o 3, Dy 2o 3, B 2o 3, Cr 2o 3, Fe 2o 3, Fe 3o 4, V 2o 5, Nb 2o 5, ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, FeS, FeSe, FeTe, CoS, CoSe, CoTe, NiS, NiSe, NiTe, PbS, PbSe, PbTe, MnS, MnSe, MnTe, SnS, SnSe, SnTe, MoS 2, MoSe 2, MoTe 2, WS 2, WSe 2, WTe 2, Cu 2s, Cu 2se, Cu 2te, Bi 2s 3, Bi 2se 3, Bi 2te 3, SiC, TiC, ZrC, WC, NbC, TaC, Mo 2c, BN, AlN, TiN, ZrN, VN, NbN, TaN, Si 3n 4, Zr 3n 4or its combination; This metal can be Au, Ag, Cu, Fe, Co, Ni, Pd, Pt, Al, Si, Ti, Zr, V, Nb, Mo, W, Mn or its combination.As shown in Figure 2, this three-dimensional yard shape photonic crystal 70 structure in the present embodiment, every layer of post height is h, and its value is between 100nm ~ 10 μm; Post is wide is w, and its value is between 100nm ~ 10 μm; Intercolumniation is a; Its value is between 100nm ~ 10 μm; And in vertical direction, every four layers is a combined cycle c, and its value between 100nm ~ 10 μm, but is not defined as every four layers, also can be every two layers or every three layers and form a combined cycle c.
In above-mentioned light-emitting component 1 structure, this three-dimensional yard shape photonic crystal 70 also can be made on the gallium nitride (GaN) of thin layer, InGaN (InGaN), gallium nitride based or nitride-base semiconductor, and form this n type semiconductor layer 60, therefore, namely this second electrode 80 is formed and is configured on this n type semiconductor layer 60.
Referring to Fig. 3 (a) with Fig. 3 (b), Fig. 3 (a) is another embodiment of the present invention three-dimensional yard shape photonic crystal electron microscope vertical view; Fig. 3 (b) is another embodiment of the present invention three-dimensional yard shape photonic crystal electron microscope end view.The structure of this three-dimensional yard shape photonic crystal 70 can be seen, its post wide for w, post height for h, intercolumniation be a, an and combined cycle c in vertical direction, every two layers is a combined cycle c in this embodiment.
The present embodiment works as substrate with rectilinear blue light-emitting diode crystal grain, and on this n type semiconductor layer 60 of blue light-emitting diode crystal grain, make this three-dimensional yard shape photonic crystal 70 form this composite structured light-emitting component 1, this three-dimensional yard shape photonic crystal 70 has photonic bandgap, the direction of propagation of light can be limited, light can be allowed only to propagate to avoid the loss of horizontal direction light in the vertical direction via design, and then improve its luminous efficiency, therefore the inside that light is restricted to this light-emitting component 1 is solved, can only at this light-emitting component 1 inner full-reflection, and cannot bright dipping effectively, cause light ejection efficiency not good, cause the problem that luminous efficiency reduces.
Refer to Fig. 2 and Fig. 4, Fig. 4 is the white light emitting element structural representation of one embodiment of the invention.In the present embodiment, a light-emitting component 1 comprises one first electrode 10; One electrically-conductive backing plate 20, is configured on this first electrode 10; One metallic reflector 30, is configured on this electrically-conductive backing plate 20; One p type semiconductor layer 40, to be configured on this metallic reflector 30; One luminescent layer 50, is configured on this p type semiconductor layer 40; One n type semiconductor layer 60, is configured on this luminescent layer 50; One three-dimensional yard shape photonic crystal 70, is made on this n type semiconductor layer 60; One second electrode 80, is configured on this three-dimensional yard shape photonic crystal 70 and forms this composite structured light-emitting component 1, and separately configures a fluorescence coating 90 on this three-dimensional yard shape photonic crystal 70, can obtain this light-emitting component 1 of white light.
Wherein the material of this electrically-conductive backing plate 20 can be silicon (Si), carborundum (SiC), zinc sulphide (ZnS), zinc selenide (ZnSe), electro-coppering or plating multiple layers metal.The material of this metallic reflector 30 can be the combination of platinum, gold, silver, copper, aluminium, nickel, titanium, chromium, palladium or more metal and alloy.The material of this p type semiconductor layer 40 can be gallium nitride (GaN), InGaN (InGaN), gallium nitride based or nitride-base semiconductor.The material of this n type semiconductor layer 60 can be gallium nitride (GaN), InGaN (InGaN), gallium nitride based or nitride-base semiconductor.The material of this luminescent layer 50 can be multi layer quantum well or the carborundum (SiC) of InGaN/gallium nitride (InGaN/GaN), aluminium gallium nitride alloy/gallium nitride (AlGaN/GaN) or aluminum gallium arsenide/GaAs (AlGaAs/GaAs).The material of this fluorescence coating 90 can be nanometer luminous organic material, nanophosphors material, fluorescent dye, fluorescein stain, nano-phosphor or quantum dot fluorescence material.
And the material of this three-dimensional yard shape photonic crystal 70 can be selected from semiconductor material, an organic polymer, an inorganic polymer, an organic compound, an inorganic compound, a metal or its combination.Wherein this semi-conducting material can be gallium nitride, InGaN, indium gallium, aluminium gallium nitride alloy, aluminum gallium arsenide, GaAs or its combination; Organic polymer can arrange for polystyrene, polymethyl methacrylate series, poly is serial, PLA is serial, the macromolecule of the sour series of polyamine group or its combination; This inorganic compound can be Ag 2o, CuO, ZnO, CdO, NiO, PdO, CoO, MgO, SiO 2, SnO 2, TiO 2, ZrO 2, HfO 2, ThO 2, CeO 2, CoO 2, MnO 2, IrO 2, VO 2, WO 3, MoO 3, Al 2o 3, Y 2o 3, Yb 2o 3, Dy 2o 3, B 2o 3, Cr 2o 3, Fe 2o 3, Fe 3o 4, V 2o 5, Nb 2o 5, ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, FeS, FeSe, FeTe, CoS, CoSe, CoTe, NiS, NiSe, NiTe, PbS, PbSe, PbTe, MnS, MnSe, MnTe, SnS, SnSe, SnTe, MoS 2, MoSe 2, MoTe 2, WS 2, WSe 2, WTe 2, Cu 2s, Cu 2se, Cu 2te, Bi 2s 3, Bi 2se 3, Bi 2te 3, SiC, TiC, ZrC, WC, NbC, TaC, Mo 2c, BN, AlN, TiN, ZrN, VN, NbN, TaN, Si 3n 4, Zr 3n 4or its combination; This metal can be Au, Ag, Cu, Fe, Co, Ni, Pd, Pt, Al, Si, Ti, Zr, V, Nb, Mo, W, Mn or its combination.In this three-dimensional yard shape photonic crystal 70, every layer of post height h is 100nm ~ 10 μm, and the wide w of post is 100nm ~ 10 μm, and intercolumniation a is 100nm ~ 10 μm, and in vertical direction, every two layers is a combined cycle c, and its value is 100nm ~ 10 μm.
In above-mentioned light-emitting component 1 structure, this three-dimensional yard shape photonic crystal 70 also can be made on the gallium nitride (GaN) of thin layer, InGaN (InGaN), gallium nitride based or nitride-base semiconductor, and form this n type semiconductor layer 60, therefore, namely this second electrode 80 can be formed and be configured on this n type semiconductor layer 60.
When nanometer luminous organic material in this fluorescence coating 90, nanophosphors material, fluorescent dye, fluorescein stain, the light-source encapsulation body forming this light-emitting component 1 in this three-dimensional yard shape photonic crystal 70 gap inserted by nano-phosphor or quantum dot fluorescence material, wherein this three-dimensional yard shape photonic crystal 70 has photonic bandgap characteristic, restriction light can only propagate the loss avoiding horizontal direction light in the vertical direction, and then improve its luminous efficiency, simultaneously also by this three-dimensional yard shape photonic crystal modulation luminescent spectrum, therefore luminous efficiency is not only increased, also can the colour temperature of this light-emitting component 1 of modulation, can cold white light be changed into warm white, improve its color rendering.
Refer to Fig. 2 and Fig. 5, Fig. 5 is white light emitting element 1 structural representation of another embodiment of the present invention.One light-emitting component 1, comprises one first electrode 10; One electrically-conductive backing plate 20, to be configured on this first electrode 10; One metallic reflector 30, is configured on this electrically-conductive backing plate 20; One p type semiconductor layer 40, to be configured on this metallic reflector 30; One luminescent layer 50, is configured on this p type semiconductor layer 40; One n type semiconductor layer 60, is configured on this luminescent layer 50; One three-dimensional yard shape photonic crystal 70, its gap-fill one fluorescence 91, this three-dimensional yard shape photonic crystal 70 is made on this n type semiconductor layer 60, and one second electrode 80, is configured on this three-dimensional yard shape photonic crystal 70.
Wherein the material of this electrically-conductive backing plate 20 can be silicon (Si), carborundum (SiC), zinc sulphide (ZnS), zinc selenide (ZnSe), electro-coppering or plating multiple layers metal.The material of this metallic reflector 30 can be the combination of platinum, gold, silver, copper, aluminium, nickel, titanium, chromium, palladium or more metal and alloy.The material of this p type semiconductor layer 40 can be gallium nitride (GaN), InGaN (InGaN), gallium nitride based or nitride-base semiconductor.The material of this n type semiconductor layer 60 can be gallium nitride (GaN), InGaN (InGaN), gallium nitride based or nitride-base semiconductor.The material of this luminescent layer 50 can be multi layer quantum well or the carborundum (SiC) of InGaN/gallium nitride (InGaN/GaN), aluminium gallium nitride alloy/gallium nitride (AlGaN/GaN) or aluminum gallium arsenide/GaAs (AlGaAs/GaAs).Wherein the material of this fluorescence 91 can be nanometer luminous organic material, nanophosphors material, fluorescent dye, fluorescein stain, nano-phosphor or quantum dot fluorescence material.
And the material of this three-dimensional yard shape photonic crystal 70 can be selected from semiconductor material, an organic polymer, an inorganic polymer, an organic compound, an inorganic compound, a metal or its combination.Wherein this semi-conducting material can be gallium nitride, InGaN, indium gallium, aluminium gallium nitride alloy, aluminum gallium arsenide, GaAs or its combination; This organic polymer can arrange for polystyrene, polymethyl methacrylate series, poly is serial, PLA is serial, the macromolecule of the sour series of polyamine group or its combination; This inorganic compound can be Ag 2o, CuO, ZnO, CdO, NiO, PdO, CoO, MgO, SiO 2, SnO 2, TiO 2, ZrO 2, HfO 2, ThO 2, CeO 2, CoO 2, MnO 2, IrO 2, VO 2, WO 3, MoO 3, Al 2o 3, Y 2o 3, Yb 2o 3, Dy 2o 3, B 2o 3, Cr 2o 3, Fe 2o 3, Fe 3o 4, V 2o 5, Nb 2o 5, ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, FeS, FeSe, FeTe, CoS, CoSe, CoTe, NiS, NiSe, NiTe, PbS, PbSe, PbTe, MnS, MnSe, MnTe, SnS, SnSe, SnTe, MoS 2, MoSe 2, MoTe 2, WS 2, WSe 2, WTe 2, Cu 2s, Cu 2se, Cu 2te, Bi 2s 3, Bi 2se 3, Bi 2te 3, SiC, TiC, ZrC, WC, NbC, TaC, Mo 2c, BN, AlN, TiN, ZrN, VN, NbN, TaN, Si 3n 4, Zr 3n 4or its combination; This metal can be Au, Ag, Cu, Fe, Co, Ni, Pd, Pt, Al, Si, Ti, Zr, V, Nb, Mo, W, Mn or its combination.In this three-dimensional yard shape photonic crystal 70, every layer of post height h is 100nm ~ 10 μm, and the wide w of post is 100nm ~ 10 μm, and intercolumniation a is 100nm ~ 10 μm, and in vertical direction, every two layers is a combined cycle c, and its value is 100nm ~ 10 μm.
In above-mentioned light-emitting component 1 structure, this three-dimensional yard shape photonic crystal 70 also can be made on the gallium nitride (GaN) of thin layer, InGaN (InGaN), gallium nitride based or nitride-base semiconductor, and form this n type semiconductor layer 60, therefore, namely this second electrode 80 can be formed and be configured on this n type semiconductor layer 60.
Among the present embodiment, separately do not add this fluorescence coating 90, but fill the light-source encapsulation body that this fluorescence 91 forms this light-emitting component 1 in this three-dimensional yard shape photonic crystal 70 air gap, obtain this optical element 1 of white light.This this composite structured light-emitting component 1, the direction of propagation of light is limited by this three-dimensional yard shape photonic crystal 70, avoid light losing, and then improve its luminous efficiency, simultaneously via this three-dimensional yard shape photonic crystal 70 modulation luminescent spectrum, therefore can also not only increase luminous efficiency, also can the colour temperature of this light-emitting component 1 of modulation, can cold white light be changed into warm white, promote its color rendering.
Refer to table 1, table 1 explains with or without the use colour temperature of this three-dimensional yard shape photonic crystal 70 and comparing of color rendering, can find out after employing this three-dimensional yard shape photonic crystal 70, its colour temperature is tuned as visually comparatively comfortable white light (reference color temperature is between 4000K-5000K), and also improve its color rendering, hereby to prove achievement of the present invention.
Table 1
Fig. 6 is the broken line graph that white light emitting element of the present invention uses difference before and after three-dimensional yard shape photonic crystal.As shown in Figure 6, the optical wavelength that transverse axis sends for light-emitting component, between 400nm to 800nm, the longitudinal axis is the relative luminous intensity of each wave band coloured light, dotted line is this white light emitting element 1 using this three-dimensional yard shape photonic crystal 70, demonstrate and can reduce the relative luminous intensity that optical wavelength is positioned at purple, indigo plant, green, yellow, orange light, and then promote warm colour light ratio shared in white light, and reach the effect reducing colour temperature.
Therefore, this composite structured light-emitting component 1 of the present invention, substrate is worked as with rectilinear blue light-emitting diode crystal grain, and on this n type semiconductor layer 60 of blue light-emitting diode crystal grain, make this three-dimensional yard shape photonic crystal 70 form this composite structured light-emitting component 1, the direction of propagation of light is limited via this three-dimensional yard shape photonic crystal 70, light can be allowed only to propagate in the vertical direction to reduce light loss, and then promote the luminous efficiency of this light-emitting component 1, this light-emitting component 1 of blue light of high-luminous-efficiency can be obtained.In addition, for obtaining this light-emitting component 1 of white light, this fluorescence coating 90 can also be increased on this three-dimensional yard shape photonic crystal 70, the nano-phosphor in this fluorescence coating 90 or quantum dot fluorescence material is made to insert the light-source encapsulation body forming this light-emitting component 1 in this three-dimensional yard shape photonic crystal 70 gap, or the light-source encapsulation body that this fluorescence 91 forms this light-emitting component 1 is filled in this three-dimensional yard shape photonic crystal 70 gap, the direction of propagation of light is limited via this three-dimensional yard shape photonic crystal 70, avoid light losing, and then improve its luminous efficiency, simultaneously can also via this three-dimensional yard shape photonic crystal 70 modulation luminescent spectrum, not only luminous efficiency can be improved, also can the colour temperature of this light-emitting component 1 of modulation, change cold white light into warm white, and then promote its color rendering.
Symbol description
1 light-emitting component
10 first electrodes
20 electrically-conductive backing plates
30 metallic reflectors
40 p type semiconductor layers
50 luminescent layers
60 n type semiconductor layers
70 three-dimensional yard shape photonic crystals
80 second electrodes
90 fluorescence coatings
91 fluorescence
W post is wide
H post is high
A intercolumniation
The c cycle.

Claims (29)

1. a light-emitting component, is characterized in that it comprises:
One first electrode;
One electrically-conductive backing plate, is configured on this first electrode;
One metallic reflector, is configured on this electrically-conductive backing plate;
One p type semiconductor layer, is configured on this metallic reflector;
One luminescent layer, is configured on this p type semiconductor layer;
One n type semiconductor layer, is configured on this luminescent layer;
One three-dimensional yard shape photonic crystal, is made on this n type semiconductor layer; And
One second electrode, is configured on this three-dimensional yard shape photonic crystal.
2. light-emitting component as claimed in claim 1, it is characterized in that: comprise a fluorescence coating further, this fluorescence coating is configured on this three-dimensional yard shape photonic crystal.
3. light-emitting component as claimed in claim 1, is characterized in that: the material of this electrically-conductive backing plate is silicon (Si), carborundum (SiC), zinc sulphide (ZnS), zinc selenide (ZnSe), electro-coppering or plating multiple layers metal.
4. light-emitting component as claimed in claim 1, is characterized in that: the material of this metallic reflector is the combination of platinum, gold, silver, copper, aluminium, nickel, titanium, chromium, palladium or more metal and alloy.
5. light-emitting component as claimed in claim 1, is characterized in that: the material of this p type semiconductor layer is gallium nitride (GaN), InGaN (InGaN), gallium nitride based or nitride-base semiconductor.
6. light-emitting component as claimed in claim 1, is characterized in that: the material of this luminescent layer is multi layer quantum well or the carborundum (SiC) of InGaN/gallium nitride (InGaN/GaN), aluminium gallium nitride alloy/gallium nitride (AlGaN/GaN) or aluminum gallium arsenide/GaAs (AlGaAs/GaAs).
7. light-emitting component as claimed in claim 1, is characterized in that: the material of this n type semiconductor layer is gallium nitride (GaN), InGaN (InGaN), gallium nitride based or nitride-base semiconductor.
8. light-emitting component as claimed in claim 1, is characterized in that: the material of this three-dimensional yard shape photonic crystal is selected from semiconductor material, an organic polymer, an inorganic polymer, an organic compound, an inorganic compound, a metal or its combination.
9. light-emitting component as claimed in claim 8, is characterized in that: this semi-conducting material is gallium nitride, InGaN, indium gallium, aluminium gallium nitride alloy, aluminum gallium arsenide, GaAs or its combination.
10. light-emitting component as claimed in claim 8, is characterized in that: this organic polymer is polystyrene series, polymethyl methacrylate is serial, poly is serial, PLA is serial, the macromolecule of the sour series of polyamine group or its combination.
11. light-emitting components as claimed in claim 8, is characterized in that: this inorganic compound is Ag 2o, CuO, ZnO, CdO, NiO, PdO, CoO, MgO, SiO 2, SnO 2, TiO 2, ZrO 2, HfO 2, ThO 2, CeO 2, CoO 2, MnO 2, IrO 2, VO 2, WO 3, MoO 3, Al 2o 3, Y 2o 3, Yb 2o 3, Dy 2o 3, B 2o 3, Cr 2o 3, Fe 2o 3, Fe 3o 4, V 2o 5, Nb 2o 5, ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, FeS, FeSe, FeTe, CoS, CoSe, CoTe, NiS, NiSe, NiTe, PbS, PbSe, PbTe, MnS, MnSe, MnTe, SnS, SnSe, SnTe, MoS 2, MoSe 2, MoTe 2, WS 2, WSe 2, WTe 2, Cu 2s, Cu 2se, Cu 2te, Bi 2s 3, Bi 2se 3, Bi 2te 3, SiC, TiC, ZrC, WC, NbC, TaC, Mo 2c, BN, AlN, TiN, ZrN, VN, NbN, TaN, Si 3n 4, Zr 3n 4or its combination.
12. light-emitting component as claimed in claim 8, is characterized in that: this metal is Au, Ag, Cu, Fe, Co, Ni, Pd, Pt, Al, Si, Ti, Zr, V, Nb, Mo, W, Mn or its combination.
13. light-emitting components as claimed in claim 1, is characterized in that: this three-dimensional yard shape photonic crystal post height is 100nm ~ 10 μm, and post is wide is 100nm ~ 10 μm, and intercolumniation is 100nm ~ 10 μm.。
14. light-emitting components as claimed in claim 1, is characterized in that: this three-dimensional yard shape photonic crystal cycle is in the vertical direction 100nm ~ 10 μm.
15. light-emitting components as claimed in claim 2, is characterized in that: the material of this fluorescence coating is nanometer luminous organic material, nanophosphors material, fluorescent dye, fluorescein stain, nano-phosphor or quantum dot fluorescence material.
16. 1 kinds of light-emitting components, is characterized in that it comprises:
One first electrode;
One electrically-conductive backing plate, is configured on this first electrode;
One metallic reflector, is configured on this electrically-conductive backing plate;
One p type semiconductor layer, is configured on this metallic reflector;
One luminescent layer, is configured on this p type semiconductor layer;
One n type semiconductor layer, is configured on this luminescent layer;
One three-dimensional yard shape photonic crystal, its gap-fill one fluorescence, this three-dimensional yard shape photonic crystal is made on this n type semiconductor layer; And
One second electrode, is configured on this three-dimensional yard shape photonic crystal.
17. light-emitting components as claimed in claim 16, is characterized in that: the material of this electrically-conductive backing plate is silicon (Si), carborundum (SiC), zinc sulphide (ZnS), zinc selenide (ZnSe), electro-coppering or plating multiple layers metal.
18. light-emitting components as claimed in claim 16, is characterized in that: the material of this metallic reflector is the combination of platinum, gold, silver, copper, aluminium, nickel, titanium, chromium, palladium or more metal and alloy.
19. light-emitting components as claimed in claim 16, is characterized in that: the material of this p type semiconductor layer is gallium nitride (GaN), InGaN (InGaN), gallium nitride based or nitride-base semiconductor.
20. light-emitting components as claimed in claim 16, is characterized in that: the material of this luminescent layer is multi layer quantum well or the carborundum (SiC) of InGaN/gallium nitride (InGaN/GaN), aluminium gallium nitride alloy/gallium nitride (AlGaN/GaN) or aluminum gallium arsenide/GaAs (AlGaAs/GaAs).
21. light-emitting components as claimed in claim 16, is characterized in that: the material of this n type semiconductor layer is gallium nitride (GaN), InGaN (InGaN), gallium nitride based or nitride-base semiconductor.
22. light-emitting components as claimed in claim 16, is characterized in that: the material of this three-dimensional yard shape photonic crystal is selected from semiconductor material, an organic polymer, an inorganic polymer, an organic compound, an inorganic compound, a metal or its combination.
23. light-emitting components as claimed in claim 22, is characterized in that: this semi-conducting material is gallium nitride, InGaN, indium gallium, aluminium gallium nitride alloy, aluminum gallium arsenide, GaAs or its combination.
24. light-emitting components as claimed in claim 22, is characterized in that: this organic polymer be polystyrene series, polymethyl methacrylate is serial, poly is serial, PLA is serial, the macromolecule of the sour series of polyamine group or its combination.
25. light-emitting components as claimed in claim 22, is characterized in that: this inorganic compound is Ag 2o, CuO, ZnO, CdO, NiO, PdO, CoO, MgO, SiO 2, SnO 2, TiO 2, ZrO 2, HfO 2, ThO 2, CeO 2, CoO 2, MnO 2, IrO 2, VO 2, WO 3, MoO 3, Al 2o 3, Y 2o 3, Yb 2o 3, Dy 2o 3, B 2o 3, Cr 2o 3, Fe 2o 3, Fe 3o 4, V 2o 5, Nb 2o 5, ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, FeS, FeSe, FeTe, CoS, CoSe, CoTe, NiS, NiSe, NiTe, PbS, PbSe, PbTe, MnS, MnSe, MnTe, SnS, SnSe, SnTe, MoS 2, MoSe 2, MoTe 2, WS 2, WSe 2, WTe 2, Cu 2s, Cu 2se, Cu 2te, Bi 2s 3, Bi 2se 3, Bi 2te 3, SiC, TiC, ZrC, WC, NbC, TaC, Mo 2c, BN, AlN, TiN, ZrN, VN, NbN, TaN, Si 3n 4, Zr 3n 4or its combination.
26. light-emitting component as claimed in claim 22, is characterized in that: this metal is Au, Ag, Cu, Fe, Co, Ni, Pd, Pt, Al, Si, Ti, Zr, V, Nb, Mo, W, Mn or its combination.
27. light-emitting components as claimed in claim 16, is characterized in that: this three-dimensional yard shape photonic crystal post height is 100nm ~ 10 μm, and post is wide is 100nm ~ 10 μm, and intercolumniation is 100nm ~ 10 μm.
28. light-emitting components as claimed in claim 16, is characterized in that: this three-dimensional yard shape photonic crystal combined cycle is in the vertical direction 100nm ~ 10 μm.
29. light-emitting components as claimed in claim 16, is characterized in that: the material of this fluorescence is nanometer luminous organic material, nanophosphors material, fluorescent dye, fluorescein stain, nano-phosphor or quantum dot fluorescence material.
CN201410344692.1A 2014-01-23 2014-07-18 Light-emitting element Pending CN104810452A (en)

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