CN104980151A - Circular oscillator - Google Patents
Circular oscillator Download PDFInfo
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- CN104980151A CN104980151A CN201510359092.7A CN201510359092A CN104980151A CN 104980151 A CN104980151 A CN 104980151A CN 201510359092 A CN201510359092 A CN 201510359092A CN 104980151 A CN104980151 A CN 104980151A
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- pmos
- nmos tube
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Abstract
The invention provides a circular oscillator which comprises N inverters and 2N current limiting MOS transistors. 2N current limiting MOS transistors comprise N current limiting PMOS transistors and N current limiting NMOS transistors. Each inverter is connected with a current limiting PMOS transistor and a current limiting NMOS transistor. The first current limiting PMOS transistor and the first current limiting NMOS transistor are connected with the first inverter and a self-bias current circuit and a power supply follower circuit. The current of the first current limiting PMOS transistor comprises current generated by the self-bias current circuit and current generated by the power supply follower circuit. The current of the first current limiting NMOS transistor comprises current generated by the self-bias current circuit and current generated by the power supply follower circuit. The current of the first current limiting PMOS transistor is transmitted to other current limiting PMOS transistors in N current limiting PMOS transistors through mirroring. The current of the first current limiting NMOS transistor is transmitted to other current limiting NMOS transistors in N current limiting NMOS transistors through mirroring.
Description
Technical field
The present invention relates to electronic technology field, particularly relate to a kind of ring oscillator.
Background technology
The structure of traditional ring oscillator as shown in Figure 1, multiple ring inverter is linked in sequence, ring inverter a, ring inverter b, ring inverter c, ring inverter d and ring inverter e are linked in sequence successively, and ring inverter e is connected with ring inverter a again.
Due to the relation of structure, there is the shortcoming that power consumption is large and frequency range is large in traditional ring oscillator, and the impact also by technique, supply voltage and temperature is larger.
Summary of the invention
The invention provides a kind of ring oscillator, to solve the large problem of traditional ring oscillator frequency excursion.
In order to solve the problem, the invention provides a kind of ring oscillator, comprising: N number of inverter and 2N current limliting metal-oxide-semiconductor, wherein, N is positive integer;
Described 2N current limliting metal-oxide-semiconductor comprises N number of current limliting PMOS and N number of current limliting NMOS tube, and each described inverter is connected with a current limliting NMOS tube with a current limliting PMOS;
The the first current limliting PMOS be connected with the first inverter in described N number of inverter is all connected with power supply follow circuit with Self-bias Current circuit with the first current limliting NMOS tube;
Wherein, the electric current of described first current limliting PMOS comprises the electric current of described Self-bias Current circuit generation and the electric current of described power supply follow circuit generation; The electric current of described first current limliting NMOS tube comprises the electric current of described Self-bias Current circuit generation and the electric current of described power supply follow circuit generation;
The electric current of described first current limliting PMOS transfers to all the other the current limliting PMOS in described N number of current limliting PMOS by mirror image; The electric current of described first current limliting NMOS tube transfers to all the other the current limliting NMOS tube in described N number of current limliting NMOS tube by mirror image.
Preferably, the electric current of described current limliting PMOS is equal with the electric current of described current limliting NMOS tube.
Preferably, described power supply follow circuit comprises a diode connection PMOS being equivalent to resistance and is connected NMOS tube with a diode being equivalent to resistance;
Wherein, described diode connects PMOS and is connected NMOS tube with described diode and connects.
Preferably, described diode connects PMOS is connected the tie point place of NMOS tube voltage with described diode and connects PMOS and described diode by supply voltage at described diode and connect dividing potential drop in NMOS tube and obtain.
Preferably, in described Self-bias Current circuit, input enable signal, make described auto bias circuit start;
Described N number of current limliting PMOS is connected in described Self-bias Current circuit, and described N number of current limliting NMOS tube is connected in described Self-bias Current circuit.
Compared with prior art, the present invention includes following advantage:
On the basis of traditional ring oscillator, add the current limliting metal-oxide-semiconductor be connected with inverter.The current source of current limliting metal-oxide-semiconductor is in two parts, and a part derives from Self-bias Current circuit, and another part derives from power supply follow circuit.Wherein, Self-bias Current circuit is mainly used in the current deviation that compensate for process variations causes, the electric current that power supply follow circuit changes mainly for generation of following mains voltage variations.The size of current of current limliting metal-oxide-semiconductor, determines the speed of inverter discharge and recharge time, thus obtains the output frequency of different ring oscillators, improves the frequencies converge characteristic of ring oscillator.
Accompanying drawing explanation
Fig. 1 is the structural representation of traditional ring oscillator;
Fig. 2 is the structural representation of a kind of ring oscillator in the embodiment of the present invention one and two;
Fig. 3 is the annexation schematic diagram of current limliting metal-oxide-semiconductor in the embodiment of the present invention one and two and Self-bias Current circuit and power supply follow circuit;
Fig. 4 is the structural representation of the power supply follow circuit in the embodiment of the present invention two;
Fig. 5 is the structural representation of the Self-bias Current circuit in the embodiment of the present invention two.
Embodiment
For enabling above-mentioned purpose of the present invention, feature and advantage become apparent more, and below in conjunction with the drawings and specific embodiments, the present invention is further detailed explanation.
A kind of ring oscillator provided by the invention is introduced in detail below by enumerating several specific embodiment.
Embodiment one
The embodiment of the present invention one provides a kind of ring oscillator.
With reference to Fig. 2, show the structural representation of a kind of ring oscillator in the embodiment of the present invention one.
Described ring oscillator can comprise N number of inverter and 2N current limliting metal-oxide-semiconductor, and wherein, N is positive integer.
Described 2N current limliting metal-oxide-semiconductor comprises N number of current limliting PMOS and N number of current limliting NMOS tube, and each described inverter is connected with a current limliting NMOS tube with a current limliting PMOS.
Ring oscillator shown in Fig. 2 includes five inverters, five inverter orders are connected to form annular, be respectively inverter a, inverter b, inverter c, inverter d and inverter e, further comprises ten current limliting metal-oxide-semiconductors, be respectively current limliting metal-oxide-semiconductor P3, current limliting metal-oxide-semiconductor P4, current limliting metal-oxide-semiconductor P5, current limliting metal-oxide-semiconductor P6, current limliting metal-oxide-semiconductor P7, current limliting metal-oxide-semiconductor N3, current limliting metal-oxide-semiconductor N4, current limliting metal-oxide-semiconductor N5, current limliting metal-oxide-semiconductor N6, current limliting metal-oxide-semiconductor N7.
Wherein, current limliting metal-oxide-semiconductor P3, current limliting metal-oxide-semiconductor P4, current limliting metal-oxide-semiconductor P5, current limliting metal-oxide-semiconductor P6 and current limliting metal-oxide-semiconductor P7 are current limliting PMOS.Current limliting metal-oxide-semiconductor N3, current limliting metal-oxide-semiconductor N4, current limliting metal-oxide-semiconductor N5, current limliting metal-oxide-semiconductor N6 and current limliting metal-oxide-semiconductor N7 are current limliting NMOS tube.
Inverter a is connected with current limliting NMOS tube N3 with current limliting PMOS P3, inverter b is connected with current limliting NMOS tube N4 with current limliting PMOS P4, inverter a is connected with current limliting NMOS tube N3 with current limliting PMOS P3, inverter c is connected with current limliting NMOS tube N5 with current limliting PMOS P5, inverter d is connected with current limliting NMOS tube N6 with current limliting PMOS P6, and inverter e is connected with current limliting NMOS tube N7 with current limliting PMOS P7.
The the first current limliting PMOS be connected with the first inverter in described N number of inverter is all connected with power supply follow circuit with Self-bias Current circuit with the first current limliting NMOS tube.
(the first current limliting PMOS (i.e. current limliting PMOS P3) that namely inverter a) is connected all is connected with power supply follow circuit with Self-bias Current circuit with the first current limliting NMOS tube (i.e. current limliting NMOS tube N3), as shown in Figure 3 with the first inverter.
Wherein, the electric current of described first current limliting PMOS can comprise the electric current of described Self-bias Current circuit generation and the electric current of described power supply follow circuit generation; The electric current of described first current limliting NMOS tube can comprise the electric current of described Self-bias Current circuit generation and the electric current of described power supply follow circuit generation.
The electric current of described first current limliting PMOS can transfer to all the other the current limliting PMOS in described N number of current limliting PMOS by mirror image; The electric current of described first current limliting NMOS tube can transfer to all the other the current limliting NMOS tube in described N number of current limliting NMOS tube by mirror image.
In sum, the embodiment of the present invention, on the basis of traditional ring oscillator, adds the current limliting metal-oxide-semiconductor be connected with inverter.The current source of current limliting metal-oxide-semiconductor is in two parts, and a part derives from Self-bias Current circuit, and another part derives from power supply follow circuit.Wherein, Self-bias Current circuit is mainly used in the current deviation that compensate for process variations causes, the electric current that power supply follow circuit changes mainly for generation of following mains voltage variations.The size of current of current limliting metal-oxide-semiconductor, determines the speed of inverter discharge and recharge time, thus obtains the output frequency of different ring oscillators, improves the frequencies converge characteristic of ring oscillator.
Embodiment two
The embodiment of the present invention two provides a kind of ring oscillator.
With reference to Fig. 2, show the structural representation of a kind of ring oscillator in the embodiment of the present invention two.
Described ring oscillator can comprise N number of inverter and 2N current limliting metal-oxide-semiconductor, and wherein, N is positive integer.
Described 2N current limliting metal-oxide-semiconductor comprises N number of current limliting PMOS and N number of current limliting NMOS tube, and each described inverter is connected with a current limliting NMOS tube with a current limliting PMOS.
Ring oscillator shown in Fig. 2 includes five inverters, five inverter orders are connected to form annular, be respectively inverter a, inverter b, inverter c, inverter d and inverter e, further comprises ten current limliting metal-oxide-semiconductors, be respectively current limliting metal-oxide-semiconductor P3, current limliting metal-oxide-semiconductor P4, current limliting metal-oxide-semiconductor P5, current limliting metal-oxide-semiconductor P6, current limliting metal-oxide-semiconductor P7, current limliting metal-oxide-semiconductor N3, current limliting metal-oxide-semiconductor N4, current limliting metal-oxide-semiconductor N5, current limliting metal-oxide-semiconductor N6, current limliting metal-oxide-semiconductor N7.
Wherein, current limliting metal-oxide-semiconductor P3, current limliting metal-oxide-semiconductor P4, current limliting metal-oxide-semiconductor P5, current limliting metal-oxide-semiconductor P6 and current limliting metal-oxide-semiconductor P7 are current limliting PMOS.Current limliting metal-oxide-semiconductor N3, current limliting metal-oxide-semiconductor N4, current limliting metal-oxide-semiconductor N5, current limliting metal-oxide-semiconductor N6 and current limliting metal-oxide-semiconductor N7 are current limliting NMOS tube.
Inverter a is connected with current limliting NMOS tube N3 with current limliting PMOS P3, inverter b is connected with current limliting NMOS tube N4 with current limliting PMOS P4, inverter a is connected with current limliting NMOS tube N3 with current limliting PMOS P3, inverter c is connected with current limliting NMOS tube N5 with current limliting PMOS P5, inverter d is connected with current limliting NMOS tube N6 with current limliting PMOS P6, and inverter e is connected with current limliting NMOS tube N7 with current limliting PMOS P7.
The the first current limliting PMOS be connected with the first inverter in described N number of inverter is all connected with power supply follow circuit with Self-bias Current circuit with the first current limliting NMOS tube.
(the first current limliting PMOS (i.e. current limliting PMOS P3) that namely inverter a) is connected all is connected with power supply follow circuit with Self-bias Current circuit with the first current limliting NMOS tube (i.e. current limliting NMOS tube N3), as shown in Figure 3 with the first inverter.
Wherein, the electric current of described first current limliting PMOS can comprise the electric current of described Self-bias Current circuit generation and the electric current of described power supply follow circuit generation; The electric current of described first current limliting NMOS tube can comprise the electric current of described Self-bias Current circuit generation and the electric current of described power supply follow circuit generation.
Preferably, the electric current of described current limliting PMOS can be equal with the electric current of described current limliting NMOS tube.
The electric current of described first current limliting PMOS can transfer to all the other the current limliting PMOS in described N number of current limliting PMOS by mirror image; The electric current of described first current limliting NMOS tube can transfer to all the other the current limliting NMOS tube in described N number of current limliting NMOS tube by mirror image.
Preferably, described power supply follow circuit can comprise a diode connection PMOS being equivalent to resistance and be connected NMOS tube with a diode being equivalent to resistance, as shown in Figure 4.
Wherein, described diode connection PMOS can be connected NMOS tube with described diode and connect, and forms an equivalent resistance string.
Preferably, described diode connects PMOS is connected the tie point VOUT place of NMOS tube voltage with described diode and connects PMOS and described diode by supply voltage at described diode and connect dividing potential drop in NMOS tube and obtain, and achieves the function of the voltage follow mains voltage variations at tie point VOUT place.
And, connect PMOS with diode and be connected NMOS tube equivalent resistance with diode, the optimization on chip area can be realized.
As shown in Figure 5, described Self-bias Current circuit is mainly used to the error that compensate for process drift is introduced to the structural representation of described Self-bias Current circuit.Described N number of current limliting PMOS is connected in described Self-bias Current circuit, and described N number of current limliting NMOS tube is connected in described Self-bias Current circuit.
Particularly, current limliting PMOS all in the embodiment of the present invention is all connected together by PB, and all current limliting NMOS tube utilize NB to connect together.
In described Self-bias Current circuit, input enable signal, make described auto bias circuit start.In time inputting enable signal en and drawn high to 1 from 0, provide a upper electric pathway just to described Self-bias Current circuit, make described Self-bias Current circuit can self-starting.After treating described Self-bias Current circuit stability, electric current is exported by IOUT.
Employing current limiting mechanism, power supply follow mechanism and Self-bias Current compensate for process drift error, the frequency range of ring oscillator can be made greatly to reduce, for identical ring inverter size, final frequency range, at 30M, is 14.5% of the frequency range of traditional ring oscillator.
It should be noted that, the size of current realizing charging, discharging when a connection current limliting PMOS is to allow inverter overturn with a current limliting NMOS tube again on an inverter in the embodiment of the present invention is identical, the clock pulse width produced is 50% empty accounting, is optimal state.
In sum, the embodiment of the present invention, on the basis of traditional ring oscillator, adds the current limliting metal-oxide-semiconductor be connected with inverter.The current source of current limliting metal-oxide-semiconductor is in two parts, and a part derives from Self-bias Current circuit, and another part derives from power supply follow circuit.Wherein, Self-bias Current circuit is mainly used in the current deviation that compensate for process variations causes, the electric current that power supply follow circuit changes mainly for generation of following mains voltage variations.The size of current of current limliting metal-oxide-semiconductor, determine the speed of inverter discharge and recharge time, thus obtain the output frequency of different ring oscillators, as long as provide the enable signal that powers on, the output frequency of the ring oscillator that can within 100ns be just is stablized, and improves the frequencies converge characteristic of ring oscillator.
Those skilled in the art also should know, the embodiment described in specification all belongs to preferred embodiment, and involved action and module might not be that the present invention is necessary.
Each embodiment in this specification all adopts the mode of going forward one by one to describe, and what each embodiment stressed is the difference with other embodiments, between each embodiment identical similar part mutually see.
Above to a kind of ring oscillator that the embodiment of the present invention provides, be described in detail, apply specific case herein to set forth principle of the present invention and execution mode, the explanation of above embodiment just understands method of the present invention and core concept thereof for helping; Meanwhile, for one of ordinary skill in the art, according to thought of the present invention, all will change in specific embodiments and applications, in sum, this description should not be construed as limitation of the present invention.
Claims (5)
1. a ring oscillator, is characterized in that, comprising: N number of inverter and 2N current limliting metal-oxide-semiconductor, and wherein, N is positive integer;
Described 2N current limliting metal-oxide-semiconductor comprises N number of current limliting PMOS and N number of current limliting NMOS tube, and each described inverter is connected with a current limliting NMOS tube with a current limliting PMOS;
The the first current limliting PMOS be connected with the first inverter in described N number of inverter is all connected with power supply follow circuit with Self-bias Current circuit with the first current limliting NMOS tube;
Wherein, the electric current of described first current limliting PMOS comprises the electric current of described Self-bias Current circuit generation and the electric current of described power supply follow circuit generation; The electric current of described first current limliting NMOS tube comprises the electric current of described Self-bias Current circuit generation and the electric current of described power supply follow circuit generation;
The electric current of described first current limliting PMOS transfers to all the other the current limliting PMOS in described N number of current limliting PMOS by mirror image; The electric current of described first current limliting NMOS tube transfers to all the other the current limliting NMOS tube in described N number of current limliting NMOS tube by mirror image.
2. ring oscillator according to claim 1, is characterized in that, the electric current of described current limliting PMOS is equal with the electric current of described current limliting NMOS tube.
3. ring oscillator according to claim 1, is characterized in that, described power supply follow circuit comprises a diode connection PMOS being equivalent to resistance and is connected NMOS tube with a diode being equivalent to resistance;
Wherein, described diode connects PMOS and is connected NMOS tube with described diode and connects.
4. ring oscillator according to claim 3, it is characterized in that, described diode connects PMOS is connected the tie point place of NMOS tube voltage with described diode and connects PMOS and described diode by supply voltage at described diode and connect dividing potential drop in NMOS tube and obtain.
5. ring oscillator according to claim 1, is characterized in that, in described Self-bias Current circuit, input enable signal, makes described auto bias circuit start;
Described N number of current limliting PMOS is connected in described Self-bias Current circuit, and described N number of current limliting NMOS tube is connected in described Self-bias Current circuit.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510359092.7A CN104980151B (en) | 2015-06-25 | 2015-06-25 | A kind of ring oscillator |
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| CN201510359092.7A CN104980151B (en) | 2015-06-25 | 2015-06-25 | A kind of ring oscillator |
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| CN104980151B CN104980151B (en) | 2018-08-17 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5544120A (en) * | 1993-04-07 | 1996-08-06 | Kabushiki Kaisha Toshiba | Semiconductor integrated circuit including ring oscillator of low current consumption |
| US20040080342A1 (en) * | 2001-08-29 | 2004-04-29 | Hideaki Murakami | Method and apparatus for stable phase-locked looping |
| CN1622457A (en) * | 2003-11-25 | 2005-06-01 | 三洋电机株式会社 | Oscillator circuit |
| CN1627440A (en) * | 2003-12-10 | 2005-06-15 | 海力士半导体有限公司 | Refresh oscillator |
| CN104300971A (en) * | 2013-07-17 | 2015-01-21 | 北京兆易创新科技股份有限公司 | Frequency stabilized ring oscillator |
-
2015
- 2015-06-25 CN CN201510359092.7A patent/CN104980151B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5544120A (en) * | 1993-04-07 | 1996-08-06 | Kabushiki Kaisha Toshiba | Semiconductor integrated circuit including ring oscillator of low current consumption |
| US20040080342A1 (en) * | 2001-08-29 | 2004-04-29 | Hideaki Murakami | Method and apparatus for stable phase-locked looping |
| CN1622457A (en) * | 2003-11-25 | 2005-06-01 | 三洋电机株式会社 | Oscillator circuit |
| CN1627440A (en) * | 2003-12-10 | 2005-06-15 | 海力士半导体有限公司 | Refresh oscillator |
| CN104300971A (en) * | 2013-07-17 | 2015-01-21 | 北京兆易创新科技股份有限公司 | Frequency stabilized ring oscillator |
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| CN104980151B (en) | 2018-08-17 |
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Address after: 230601 Building 1, Pearl Plaza, Hefei Economic and Technological Development Zone, Anhui Province Patentee after: HEFEI GEYI INTEGRATED CIRCUIT Co.,Ltd. Patentee after: Zhaoyi Innovation Technology Group Co.,Ltd. Address before: 230601 Building 1, Pearl Plaza, Hefei Economic and Technological Development Zone, Anhui Province Patentee before: HEFEI GEYI INTEGRATED CIRCUIT Co.,Ltd. Patentee before: GIGADEVICE SEMICONDUCTOR(BEIJING) Inc. |
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