CN1054468C - Polysilicon structure discharge technology for surface treatment - Google Patents
Polysilicon structure discharge technology for surface treatment Download PDFInfo
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- CN1054468C CN1054468C CN 98102573 CN98102573A CN1054468C CN 1054468 C CN1054468 C CN 1054468C CN 98102573 CN98102573 CN 98102573 CN 98102573 A CN98102573 A CN 98102573A CN 1054468 C CN1054468 C CN 1054468C
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Abstract
The present invention relates to technic for releasing a polycrystalline silicon structure used for surface technic. In surface sacrificial layer technic which is usually adopted, the polycrystalline silicon structure can be adhered to a substrate due to the tension of processing liquid in the cleaning and drying procedure after corrosion. In the process of preparing the polycrystalline silicon structure, the present invention simultaneously forms a plurality of polycrystalline silicon support columns connected with the substrate, respectively uses a silicon nitride film and light-sensitive lacquer as masks for two times or uses the light-sensitive lacquer as the masks for both times, erodes the sacrificial layer, etches out the polycrystalline silicon structure with a dry method, and simultaneously removes the polycrystalline silicon support columns. The present invention is established in a layout design, thoroughly overcomes an adhesional effect, and is suitable for mass production.
Description
The present invention is a kind of method that the surface treatment polysilicon structure discharges that is used for, and the present invention relates to surperficial sacrifice layer process.
The surface sacrifice layer process is a very important silicon micro-machining technology, and it is compatible mutually that it is easy to integrated circuit technology.Fig. 1 is the schematic flow sheet of surperficial sacrifice layer process.(1) is substrate silicon among the figure, if 4 inches silicon chips, thickness is generally about 5225 microns; (2) be that LPCVD (low-pressure chemical vapor phase deposition) isolates silicon dioxide, thickness is about the 2000-10000 dust; (3) be that LPCVD isolates silicon nitride, thickness is about the 1000-2000 dust; (4) be LPCVD polysilicon hearth electrode; (5) be sacrificial layer material, be generally thermal oxidation silicon dioxide or LPCVD PSG (phosphorosilicate glass) and form that thickness is the 1-2 micron, this kind material is easily corroded by hydrofluoric acid; (6) be the LPCVD polysilicon, be the mechanical structure layer, the about 2-15 micron of thickness; (7) be the mask material that etch polysilicon is used, the method for etching is generally plasma etching, and gas is very fast to the regional etching of first mask protection during etching, and very fast in the vertical direction etching, and very slow at lateral etching.
Concrete technological process is: at deposit LPCVD silicon dioxide on the substrate silicon and between the silicon nitride; The deposit lpcvd silicon nitride, deposit LPCVD polysilicon, and mix, the effect of doping is to make polysilicon to conduct electricity; The polysilicon photoetching, and use the plasma dry etching, form hearth electrode; The LPCVD phosphorosilicate glass forms sacrifice layer, photoetching and this layer of etching phosphorosilicate glass; The LPCVD polysilicon, and mix, be mask with the photoresist, dry etching goes out polysilicon structure; In hydrofluoric acid solution, corrode, remove sacrifice layer, releasing structure; Handle the corrosive liquid on the silicon chip, and dry silicon chip.
In above-mentioned technical process, the problem of a key is after sacrificial layer material such as corrode silicon dioxide or phosphorosilicate glass, and in cleaning-drying process subsequently, polysilicon structure is because the tension force effect of last reason liquid can make that structure adheres on the substrate.For this problem, supercritical carbon dioxide process is abroad arranged, methods such as freezing and sublimation method and dry etching, referring to Mulhem G.T., Soane D.S. and Howe R.T., the 7th solid state sensor and actuator proceeding, 1993,296-299; Kobayashi D., Kim C.J. and Fujita H., the 6th solid state sensor and actuator proceeding, 1991,14-15; Guckel H., Sniegowski J.J. and Christenson T.R., IEEE was with Mechatronic Systems proceeding, 71-75 in 1989; Takeshima N., Gabriel K.J., Ozaki M., Takahasji J., Horiguchi H. and FujitaH., the 6th solid state sensors in 1991 and hold ground device proceeding, 63-64.But because the sheet number of these method single treatments is limited or corrosion rate is slower, thus be not suitable for producing in batches, and need complicated Special Equipment.
The objective of the invention is to be based on layout design, thoroughly overcome this adhesion effect, address this problem simply and effectively, make to be suitable for producing in batches.
Specify embodiment of the present invention below in conjunction with accompanying drawing:
The present invention comprises the steps: 1 as shown in Figures 2 and 3) in the polysilicon structure preparation process, form the polysilicon pillar (13) that links to each other with substrate simultaneously; 2) subsequently, utilize the mask of silicon nitride film as polysilicon structure, again with photoresist as the mask of carving etch pit, carve etch pit, carry out sacrifice layer corrosion after removing photoresist, utilize existing silicon nitride mask behind the cleaning-drying, dry method carves polysilicon structure, and simultaneously the polysilicon pillar is removed, last dry method is carved and is removed silicon nitride mask; Or utilize photoresist as the mask first time, carve etch pit, remove photoresist and carry out sacrifice layer corrosion, clean dry after, with photoresist as mask for the second time, dry method carves polysilicon structure, and simultaneously polysilicon pillar (13) is removed again.
Detailed process process as shown in Figure 2, utilize respectively silicon nitride film and photoresist among the present invention comprise the steps: Fig. 2 (a) as the technology of twice mask: make polysilicon hearth electrode (4); Fig. 2 (b): make LPCVD silicon dioxide hearth electrode protective layer (8) and lpcvd silicon nitride hearth electrode protective layer (9); Fig. 2 (c): LPCVD (low-pressure chemical vapor phase deposition) PSG (phosphorosilicate glass) sacrifice layer (5) deposit forms contact hole and polysilicon pillar hole with positive photoetching rubber as the mask dry etching; Fig. 2 (d): LPCVD polysilicon (6) deposit, and ion injects and annealing, forms doped polycrystalline silicon, plays the effect of contact electrode and polysilicon pillar (13) in processing technology subsequently at the polysilicon of contact hole place and the place's deposit of polysilicon pillar hole; Fig. 2 (e): deposit lpcvd silicon nitride mask (10) and LPCVD silicon dioxide layer of protection (11); Fig. 2 (f): photoetching lpcvd silicon nitride mask (10) and LPCVD silicon dioxide layer of protection (11), the mask of formation etch polysilicon structure sheaf, the hole of exposing sacrifice layer corrosion hole (14) and etch polysilicon pillar (13) simultaneously; Fig. 2 (g): even glue photoetching forms the positive photoetching rubber mask (12) that dry etching forms sacrifice layer corrosion hole (14) on silicon nitride and earth silicon mask again; Fig. 2 (h): the dry etching polysilicon is up to sacrifice layer, forms the etch pit of corrosion sacrifice layer, and remove photoresist subsequently and carried out HF acid sacrifice layer corrosion 5-15 minute, after removing to fall phosphorosilicate glass fully, corroding, available washed with de-ionized water, and dry; Fig. 2 (i): utilize existing lpcvd silicon nitride mask (10), dry etching goes out polysilicon structure, and polysilicon pillar (13) is carved removed simultaneously; Fig. 2 (j): dry etching lpcvd silicon nitride mask (10).
Detailed process process as shown in Figure 3, the photoresist that utilizes among the present invention comprises the steps: Fig. 3 (a) as the technology of twice mask: make polysilicon hearth electrode (4); Fig. 3 (b): make LPCVD silicon dioxide hearth electrode protective layer (8) and lpcvd silicon nitride hearth electrode protective layer (9), this composite protection layer of photoetching and etching forms contact hole; Fig. 3 (c): LPCVD PSG sacrifice layer (5) deposit, make the mask dry etching with glue and form contact hole and polysilicon pillar hole; Fig. 3 (d): LPCVD polysilicon (6) deposit, and ion injects and annealing, forms doped polycrystalline silicon, plays the effect of contact electrode and polysilicon pillar (13) in processing technology subsequently at the polysilicon of contact hole place and the place's deposit of polysilicon pillar hole; Fig. 3 (e): even glue photoetching forms the photoresist mask (12) that the dry etching polysilicon forms sacrifice layer corrosion hole (14); Fig. 3 (f): the dry etching polysilicon, up to carving, form the hole of corrosion sacrifice layer to the sacrifice layer phosphorosilicate glass, remove photoresist and carried out HF acid sacrifice layer corrosion 2-15 minute, all sacrifice layers are removed, after corroding, available washed with de-ionized water, and dry; Fig. 3 (g): photoetching on the polysilicon structure layer behind the sacrifice layer corrosion forms the positive photoetching rubber mask (15) that dry etching forms polysilicon structure; Fig. 3 (h): the dry etching polysilicon etches polysilicon structure, and polysilicon pillar (13) is carved removed simultaneously, and removes photoresist.
Shown in Fig. 2 (a) and Fig. 3 (a), make polysilicon hearth electrode (4) among the present invention and comprise the steps: 1) go up deposit LPCVD isolation silicon dioxide (2) in substrate silicon (1); 2) isolate silicon dioxide (2) at LPCVD and go up deposit LPCVD isolation silicon nitride (3); 3) isolate silicon nitride (3) at LPCVD again and go up the LPCVD polysilicon, and mix, make polysilicon conduct electricity; 4) again to even glue of polysilicon and photoetching; 5) use the plasma dry etching again, form polysilicon hearth electrode (4).
The contact electrode polysilicon links to each other with hearth electrode polysilicon (4) among the present invention, and polysilicon pillar (13) then only links to each other with lpcvd silicon nitride hearth electrode protective layer (9) on the hearth electrode.Need even glue behind the sacrifice layer corrosion.As shown in Figure 2, in the technology of utilizing silicon nitride film and photoresist as twice mask respectively, the thickness of lpcvd silicon nitride mask (10) is the 1000-2000 dust, the thickness that the dry etching polysilicon forms the positive photoetching rubber mask (12) in sacrifice layer corrosion hole is the 10000-20000 dust, as shown in Figure 3, utilizing photoresist as twice masking process, the thickness that the dry etching polysilicon forms the positive photoetching rubber mask (12) in sacrifice layer corrosion hole is the 10000-20000 dust, and positive photoetching rubber mask (15) thickness that dry etching forms polysilicon structure is the 20000-40000 dust.As shown in Figures 2 and 3, among the present invention, for 4 inches silicon chips, the thickness that the thickness of substrate silicon (1) is generally 525 ± 10 microns LPCVD isolation silicon dioxide (2) is the 3000-10000 dust; It is the 1000-2000 dust that LPCVD isolates silicon nitride (3) thickness; The thickness of LPCVD polysilicon hearth electrode (4) is the 2000-4000 dust; The thickness of LPCVD PSG sacrifice layer (5) is the 15000-25000 dust; The thickness of LPCVD polysilicon (6) is the 2-15 micron; The thickness of LPCVD silicon dioxide hearth electrode protective layer (8) is the 500-1000 dust; The thickness of lpcvd silicon nitride hearth electrode protective layer (9) is the 1000-2000 dust; The thickness of LPCVD silicon dioxide layer of protection (11) is the 500-1000 dust.The thickness of polysilicon pillar (13) is identical with the thickness of LPCVD polysilicon (6).
The invention has the advantages that and be based on layout design, overcome the adhesion effect of polysilicon structure and substrate up hill and dale, can obtain the good polysilicon suspension structure of effect, be suitable for producing in batches.
Description of drawings:
The schematic flow sheet of Fig. 1 surface sacrifice layer process, wherein:
1-substrate silicon 2-LPCVD isolates silicon dioxide
3-LPCVD isolates silicon nitride 4-LPCVD polysilicon hearth electrode
5-LPCVD PSG sacrifice layer 6-LPCVD polysilicon
The mask material that the 7-etch polysilicon is used.
Fig. 2 utilizes polysilicon pillar and silicon nitride/photoresist bilayer mask to overcome the process flow of adhesion effect
The schematic diagram of journey, wherein:
1-substrate silicon 2-LPCVD isolates silicon dioxide
3-LPCVD isolates silicon nitride 4-LPCVD polysilicon hearth electrode
5-LPCVD PSG sacrifice layer 6-LPCVD polysilicon
8-LPCVD silicon dioxide hearth electrode protective layer.
9-LPCVD silicon nitride hearth electrode protective layer
10-LPCVD silicon nitride mask 11-LPCVD silicon dioxide layer of protection
12-dry etching polysilicon forms the positive photoetching rubber mask in sacrifice layer corrosion hole
13-polysilicon pillar 14-sacrifice layer corrosion hole.
Fig. 3 is that even glue is eliminated the adhesion effect after utilizing polysilicon pillar, photoresist bilayer mask and sacrifice layer corrosion
The schematic diagram of the technological process of answering, wherein:
1-substrate silicon 2-LPCVD isolates silicon dioxide
3-LPCVD isolates silicon nitride 4-LPCVD polysilicon hearth electrode
5-LPCVD PSG sacrifice layer 6-LPCVD polysilicon
8-LPCVD silicon dioxide hearth electrode protective layer
9-LPCVD silicon nitride hearth electrode protective layer
12-dry etching polysilicon forms the positive photoetching rubber mask in sacrifice layer corrosion hole
13-polysilicon pillar 14-sacrifice layer corrosion hole
The 15-dry etching forms the positive optical cement mask of polysilicon structure.
Embodiment:
The present invention comprises the steps: 1 as shown in Figures 2 and 3) in the polysilicon structure preparation process, form the polysilicon pillar (13) that links to each other with substrate simultaneously; 2) subsequently, utilize the mask of silicon nitride film as polysilicon structure, again with photoresist as the mask of carving etch pit, carve etch pit, carry out sacrifice layer corrosion after removing photoresist, utilize existing silicon nitride mask behind the cleaning-drying, dry method carves polysilicon structure, and simultaneously the polysilicon pillar is removed, last dry method is carved and is removed silicon nitride mask; Or utilize photoresist as the mask first time, carve etch pit, remove photoresist and carry out sacrifice layer corrosion, clean dry after, with photoresist as mask for the second time, dry method carves polysilicon structure, and simultaneously polycrystalline pillar (13) is removed again.
Detailed process process as shown in Figure 2, utilize respectively silicon nitride film and photoresist among the present invention comprise the steps: Fig. 2 (a) as the technology of twice mask: make polysilicon hearth electrode (4); Fig. 2 (b): make LPCVD silicon dioxide hearth electrode protective layer (8) and lpcvd silicon nitride hearth electrode protective layer (9); Fig. 2 (c): LPCVD (low-pressure chemical vapor phase deposition) PSG (phosphorosilicate glass) sacrifice layer (5) deposit is made the mask dry etching with positive photoetching rubber and is formed contact hole and polysilicon pillar hole; Fig. 2 (d): LPCVD polysilicon (6) deposit, and ion injects and annealing, forms doped polycrystalline silicon, plays the effect of contact electrode and polysilicon pillar (13) in processing technology subsequently at the polysilicon of contact hole place and the place's deposit of polysilicon pillar hole; Fig. 2 (e): deposit lpcvd silicon nitride mask (10) and LPCVD silicon dioxide layer of protection (11); Fig. 2 (f): photoetching lpcvd silicon nitride mask (10) and LPCVD silicon dioxide layer of protection (11), the mask of formation etch polysilicon structure sheaf, the hole of exposing sacrifice layer corrosion hole (14) and etch polysilicon pillar (13) simultaneously; Fig. 2 (g): even glue photoetching forms the positive photoetching rubber mask (12) that dry etching forms sacrifice layer corrosion hole (14) on silicon nitride and earth silicon mask again; Fig. 2 (h): the dry etching polysilicon is up to sacrifice layer, forms the etch pit of corrosion sacrifice layer, removes photoresist subsequently and carries out HF acid sacrifice layer corrosion 5-15 minute, the concentration of HF acid gets 40%, and corrosion is until complete dephosphorization silex glass, after corroding, available washed with de-ionized water, and dry; Fig. 2 (i): utilize existing LPCVD silicon oxide masking film (10), dry etching goes out polysilicon structure, and polysilicon pillar (13) is carved removed simultaneously; Fig. 2 (j): dry etching lpcvd silicon nitride mask (10).
Detailed process process as shown in Figure 3, the photoresist that utilizes among the present invention comprises the steps: Fig. 3 (a) as the technology of twice mask: make many silicon hearth electrode (4); Fig. 3 (b): make LPCVD silicon dioxide hearth electrode protective layer (8) and lpcvd silicon nitride hearth electrode protective layer (9), this composite protection layer of photoetching and etching forms contact hole; Fig. 3 (c): LPCVD PSG sacrifice layer (5) deposit, make the mask dry etching with glue and form contact hole and polysilicon pillar hole; Fig. 3 (d): LPCVD polysilicon (6) deposit, and ion injects and annealing, forms doped polycrystalline silicon, plays the effect of contact electrode and polysilicon pillar (13) in processing technology subsequently at the polysilicon of contact hole place and the place's deposit of polysilicon pillar hole; Fig. 3 (e): even glue photoetching forms the photoresist mask (12) that the dry etching polysilicon forms sacrifice layer corrosion hole (14); Fig. 3 (f): the dry etching polysilicon up to carving to the sacrifice layer phosphorosilicate glass, forms the hole of corrosion sacrifice layer, remove photoresist and carried out HF acid sacrifice layer corrosion 5-15 minute, the concentration of HF acid gets 40%, and corrosion is directly removed all sacrifice layers, after corroding, available washed with de-ionized water, and dry; Fig. 3 (g): photoetching on the polysilicon structure layer behind the sacrifice layer corrosion forms dry etching and forms polysilicon knot glue mask (15) at quarter; Fig. 3 (h): the dry etching polysilicon etches polysilicon structure, and polysilicon pillar (13) is carved removed simultaneously, and removes photoresist.
Shown in Fig. 2 (a) and Fig. 3 (a), make polysilicon hearth electrode (4) among the present invention and comprise the steps: 1) go up deposit LPCVD isolation silicon dioxide (2) in substrate silicon (1); 2) isolate silicon dioxide (2) at LPCVD and go up deposit LPCVD isolation silicon nitride (3); 3) isolate silicon nitride (3) at LPCVD again and go up the LPCVD polysilicon, and mix, make polysilicon conduct electricity; 4) again to even glue of polysilicon and photoetching; 5) use the plasma dry etching again, form polysilicon hearth electrode (4).
The contact electrode polysilicon links to each other with hearth electrode polysilicon (4) among the present invention, and polysilicon pillar (13) then only links to each other with lpcvd silicon nitride hearth electrode protective layer (9) on the hearth electrode.Need even glue behind the sacrifice layer corrosion.As shown in Figure 2, in the technology of utilizing silicon nitride film and photoresist as twice mask respectively, the thickness of lpcvd silicon nitride mask (10) is got 2000 dusts, and the dry etching polysilicon forms the thickness of the positive photoetching rubber mask (12) in sacrifice layer corrosion hole and gets 15000 dusts.As shown in Figure 3, in the technology of utilizing photoresist as twice mask, the dry etching polysilicon forms the thickness of the positive photoetching rubber mask (12) in sacrifice layer corrosion hole and gets 15000 dusts, and dry etching forms positive photoetching rubber mask (15) thickness of polysilicon structure and gets 35000 dusts.As shown in Figures 2 and 3, adopt 4 inches silicon chips, the thickness of substrate silicon (1) is got 525 microns; LPCVD isolates the thickness of silicon dioxide (2) and gets 5000 dusts; LPCVD isolates the thickness of silicon nitride (3) and gets 2000 dusts; The thickness of LPCVD polysilicon hearth electrode (4) is got 3000 dusts; The thickness of LPCVD PSG sacrifice layer (5) is got 20000 dusts, its thickness promptly be polysilicon structure and substrate between distance, in technology subsequently, will empty with the hydrofluoric acid burn into; The thickness of LPCVD polysilicon (6) is got 2 microns, and its thickness promptly is the thickness of mechanical structure, and except LPCVD, polysilicon structure can also obtain by the method for extension; The thickness of LPCVD silicon dioxide hearth electrode protective layer (8) is got 800 dusts; The thickness of lpcvd silicon nitride hearth electrode protective layer (9) is got 2000 dusts; The thickness of LPCVD silicon dioxide layer of protection (11) is got 800 dusts.The thickness of polysilicon pillar (13) is identical with the thickness of LPCVD polysilicon (6), plays a supportive role.Sacrifice layer corrosion hole (14) is used for allowing hydrofluoric acid by corrode sacrifice layer under entering into polysilicon.
Claims (10)
1, a kind of method that is used for the release of surface treatment polysilicon structure is characterized in that comprising the steps:
1) in the polysilicon structure preparation process, forms the polysilicon pillar (13) that links to each other with substrate simultaneously;
2) subsequently, utilize the mask of silicon nitride film as polysilicon structure, again with photoresist as the mask of carving etch pit, carve etch pit, carry out sacrifice layer corrosion after removing photoresist, utilize existing silicon nitride mask behind the cleaning-drying, dry method carves polysilicon structure, and simultaneously the polysilicon pillar is removed, last dry method is carved and is removed silicon nitride mask; Or utilize photoresist as the mask first time, carve etch pit, remove photoresist and carry out sacrifice layer corrosion, clean dry after, with photoresist as mask for the second time, dry method carves polysilicon structure, and simultaneously polysilicon pillar (13) is removed again.
2,, it is characterized in that wherein utilize respectively silicon nitride film and photoresist comprise the steps: as the technology of twice mask according to the described a kind of method that the surface treatment polysilicon structure discharges that is used for of claim 1
1) makes polysilicon hearth electrode (4);
2) make LPCVD (low-pressure chemical vapor phase deposition) silicon dioxide hearth electrode protective layer (8) and lpcvd silicon nitride hearth electrode protective layer (9);
3) LPCVD PSG (phosphorosilicate glass) sacrifice layer (5) deposit is made the mask dry etching with positive photoetching rubber and is formed contact hole and polysilicon pillar hole;
4) LPCVD polysilicon (6) deposit, and ion injects and annealing, forms doped polycrystalline silicon plays a part in processing technology subsequently with contact electrode and polysilicon pillar (13) at the polysilicon of contact hole place and the place's deposit of polysilicon pillar hole;
5) deposit lpcvd silicon nitride mask (10) and LPCVD silicon dioxide layer of protection (11);
6) photoetching lpcvd silicon nitride mask (10) and LPCVD silicon dioxide layer of protection (11), the mask of formation etch polysilicon structure sheaf, the hole of exposing sacrifice layer corrosion hole (14) and etch polysilicon pillar (13) simultaneously;
7) on silicon nitride and earth silicon mask, spare the glue photoetching again and form the positive photoetching rubber mask (12) that dry etching forms sacrifice layer corrosion hole (14);
8) the dry etching polysilicon is up to sacrifice layer, forms the etch pit of corrosion sacrifice layer, and remove photoresist subsequently and carried out HF acid sacrifice layer corrosion 5-15 minute, after removing phosphorosilicate glass fully, corroding, available washed with de-ionized water, and dry;
9) utilize existing lpcvd silicon nitride mask (10), dry etching goes out polysilicon structure, and polysilicon pillar (13) is carved removed simultaneously;
10) dry etching lpcvd silicon nitride mask (10).
3, according to the described a kind of method that the surface treatment polysilicon structure discharges that is used for of claim 1, it is characterized in that the photoresist that utilizes wherein comprises the steps: as the technology of twice mask
1) makes polysilicon hearth electrode (4);
2) make LPCVD silicon dioxide hearth electrode protective layer (8) and lpcvd silicon nitride hearth electrode protective layer (9), this composite protection layer of photoetching and etching forms contact hole;
3) LPCVD PSG sacrifice layer (5) deposit is made the mask dry etching with glue and is formed contact hole and polysilicon pillar hole;
4) LPCVD polysilicon (6) deposit, and ion injects and annealing, forms doped polycrystalline silicon, plays a part in the polysilicon processing technology subsequently of contact hole place and the place's deposit of polysilicon pillar hole with contact electrode and polysilicon pillar (13);
5) even glue photoetching forms the photoresist mask (12) that the dry etching polysilicon forms sacrifice layer corrosion hole (14);
6) dry etching polysilicon up to carving to the sacrifice layer phosphorosilicate glass, forms the hole of corrosion sacrifice layer, removes photoresist and carries out HF acid sacrifice layer corrosion 5-15 minute, all sacrifice layers are removed, and after corroding, available washed with de-ionized water, and dry;
7) photoetching on the polysilicon structure layer behind the sacrifice layer corrosion forms the positive photoetching rubber mask (15) that dry etching forms polysilicon structure;
8) the dry etching polysilicon etches polysilicon structure, and polysilicon pillar (13) is carved removed simultaneously, and removes photoresist.
4, according to the described a kind of method that the surface treatment polysilicon structure discharges that is used for of claim 2, it is characterized in that the thickness of polysilicon pillar (13) is identical with the thickness of LPCVD polysilicon (6).
5, according to the described a kind of method that the surface treatment polysilicon structure discharges that is used for of claim 2, the thickness that it is characterized in that lpcvd silicon nitride mask (10) is the 1000-2000 dust, and the thickness that the dry etching polysilicon forms the positive photoetching rubber mask (12) in sacrifice layer corrosion hole is the 10000-20000 dust.
6, according to the described a kind of method that the surface treatment polysilicon structure discharges that is used for of claim 3, it is characterized in that needing even glue behind the sacrifice layer corrosion.
7, according to the described a kind of method that the surface treatment polysilicon structure discharges that is used for of claim 3, it is held and levies is that the thickness that the dry etching polysilicon forms the positive photoetching rubber mask (12) in sacrifice layer corrosion hole is the 10000-20000 dust, and positive photoetching rubber mask (15) thickness that dry etching forms polysilicon structure is the 20000-40000 dust.
8, according to claim 2 or 3 described a kind of methods that the surface treatment polysilicon structure discharges that are used for; it is characterized in that wherein the contact electrode polysilicon links to each other with hearth electrode polysilicon (4), polysilicon pillar (13) then only links to each other with lpcvd silicon nitride hearth electrode protective layer (9) on the hearth electrode.
9, according to claim 2 or 3 described a kind of methods that the surface treatment polysilicon structure discharges that are used for, it is characterized in that wherein making polysilicon hearth electrode (4) and comprise the steps:
1) goes up deposit LPCVD in substrate silicon (1) and isolate silicon dioxide (2);
2) isolate silicon dioxide (2) at LPCVD and go up deposit LPCVD isolation silicon nitride (3);
3) isolate silicon nitride (3) at LPCVD again and go up the LPCVD polysilicon, and mix, make polysilicon conduct electricity;
4) again to even glue of polysilicon and photoetching;
5) use the plasma dry etching again, form polysilicon hearth electrode (4).
10, according to claim 2 or 3 described a kind of methods that the surface treatment polysilicon structure discharges that are used for, it is characterized in that:
1) for 4 inches silicon chips, the thickness of substrate silicon (1) is generally the 525+10 micron;
2) thickness of LPCVD isolation silicon dioxide (2) is the 3000-10000 dust;
3) thickness of LPCVD isolation silicon nitride (3) is the 1000-2000 dust;
4) thickness of LPCVD polysilicon hearth electrode (4) is the 2000-4000 dust;
5) thickness of LPCVD PSG sacrifice layer (5) is the 15000-25000 dust;
6) thickness of LPCVD polysilicon (6) is the 2-15 micron;
7) thickness of LPCVD silicon dioxide hearth electrode protective layer (8) is the 500-1000 dust;
8) thickness of lpcvd silicon nitride hearth electrode protective layer (9) is the 1000-2000 dust;
9) thickness of LPCVD silicon dioxide layer of protection (11) is the 500-1000 dust.
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| CN 98102573 CN1054468C (en) | 1998-07-03 | 1998-07-03 | Polysilicon structure discharge technology for surface treatment |
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| US7776628B2 (en) | 2006-11-16 | 2010-08-17 | International Business Machines Corporation | Method and system for tone inverting of residual layer tolerant imprint lithography |
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| CN100396594C (en) * | 2005-06-23 | 2008-06-25 | 中国科学院微电子研究所 | Method for making and releasing sacrificial layer by using salient point based on silicon substrate |
| CN100579893C (en) * | 2005-11-17 | 2010-01-13 | 中国科学院光电技术研究所 | Centrifugal separating sacrificial layer process |
| CN100478272C (en) * | 2006-04-25 | 2009-04-15 | 北京大学 | Prepn process of beam structure in nanometer thickness |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US7776628B2 (en) | 2006-11-16 | 2010-08-17 | International Business Machines Corporation | Method and system for tone inverting of residual layer tolerant imprint lithography |
| US8137997B2 (en) | 2006-11-16 | 2012-03-20 | International Business Machine Corporation | Method and system for tone inverting of residual layer tolerant imprint lithography |
| US8137996B2 (en) | 2006-11-16 | 2012-03-20 | International Business Machines Corporation | Method and system for tone inverting of residual layer tolerant imprint lithography |
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