CN105576107A - LED packaging structure and packaging method thereof - Google Patents
LED packaging structure and packaging method thereof Download PDFInfo
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- CN105576107A CN105576107A CN201410528562.3A CN201410528562A CN105576107A CN 105576107 A CN105576107 A CN 105576107A CN 201410528562 A CN201410528562 A CN 201410528562A CN 105576107 A CN105576107 A CN 105576107A
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- led
- arrangement part
- catoptric arrangement
- cavity
- led encapsulation
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Abstract
The invention discloses an LED packaging structure and a packaging method thereof. The LED packaging structure comprises a reflection structural member, an LED flip chip and a packaging colloid. The reflection structural member is provided with a cavity, and the upper end surface and the lower end surface of the reflection structural member are respectively provided with a top opening and a bottom opening which are communicated with the cavity; the LED flip chip is arranged in the cavity, and the electrode surface of the LED flip chip faces the bottom opening; and the packaging colloid is arranged in the cavity to package the LED flip chip. According to the invention, light emitted by the LED flip chip can be directly emitted out from the bottom opening, part of light emitted upwards can be directly emitted out through the packaging colloid, and the other part of light emitted upwards is projected to the inner wall of the cavity and can also penetrates through the fluorescent packaging colloid after being reflected, so that the integral light efficiency is high.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly relate to a kind of LED encapsulation structure and method for packing thereof.
Background technology
LED, as a forth generation lighting source, has energy-conservation and life-span advantage significantly.
LED is the key link obtaining high-quality LED illumination light source, existing flip chip mounting method has the following two kinds: one is adopt fluorescence packing colloid (mixture of fluorescent material and silica gel) 2 directly to carry out encapsulating (as shown in Figure 1) in all sides of flip-chip 1 and top, the inhomogeneities that this encapsulating structure mixes due to fluorescent material, during cutting, stress causes product rejection rate high.Two is that all sides of flip-chip 1 adopt vertical plastic material 3, top adopts fluorescence packing colloid 4 to carry out sealing (as shown in Figure 2).This encapsulating structure is because the vertical plastic material 21 of all sides is to the multiple reflections formation heat of light, and light efficiency is low.
Summary of the invention
For above-mentioned prior art present situation, technical problem to be solved by this invention is, provides a kind of structure is simple, light loss is low LED encapsulation structure and method for packing thereof.
In order to solve the problems of the technologies described above, a kind of LED encapsulation structure provided by the present invention, comprising:
Catoptric arrangement part, described catoptric arrangement part has cavity, is respectively arranged with and the open top of described cavity connects and bottom opening in the upper surface of described catoptric arrangement part and lower surface;
LED flip chip, described LED flip chip is arranged in described cavity, and the electrode surface of described LED flip chip is towards described bottom opening; And
Packing colloid, described packing colloid is filled in described cavity to encapsulate described LED flip chip.
Wherein in an embodiment, described catoptric arrangement part is moulding.
Wherein in an embodiment, the longitudinal section of the inwall of described cavity is herringbone.
Wherein in an embodiment, the inwall of described cavity bottom is provided with inwardly outstanding flange, the electrode surface of described LED flip chip and the either flush of described flange.
Wherein in an embodiment, the lateral surface of described catoptric arrangement part is vertical with described lower surface with described upper surface.
Wherein in an embodiment, the electrode of described LED flip chip stretches out from described bottom opening, and the end face of described electrode is concordant with described lower surface.
Wherein in an embodiment, in described packing colloid, be mixed with fluorescent material.
Wherein in an embodiment, the end face of described packing colloid is concordant with the upper surface of described catoptric arrangement part.
The method for packing of a kind of above-mentioned LED encapsulation structure provided by the present invention, comprises the steps:
A, the injection moulding of employing plastic material form catoptric arrangement part sheet material, and described catoptric arrangement part sheet material has the described cavity of some arrangements in matrix;
B, on the lower surface of described catoptric arrangement part sheet material, paste counterdie, the bottom opening of described cavity is closed;
C, described flip-chip is put into described cavity carry out die bond, the electrode of described flip-chip abuts against on described counterdie;
D, encapsulating material is injected described cavity, form described packing colloid;
Packing colloid described in e, baking-curing;
F, cut described catoptric arrangement part sheet material and form described catoptric arrangement part; And
G, remove described counterdie.
Wherein in an embodiment, in step f, high-temperature machining under baking temperature, and 1/2 ~ 3/4 place being cut to described carrier film thickness.
Wherein in an embodiment, in step a, described plastic material is that modification gathers terephthalate p-phenylenediamine (PPD) plastics, poly terephthalic acid 1,4-CHDM ester resin or epoxy film resin.
Compared with prior art, LED encapsulation structure of the present invention, the light that flip-chip sends downwards can directly outgoing, the light part upwards sent directly can pass packing colloid outgoing, by also can through fluorescence packing colloid after reflection on the inwall that another part light sent upwards is incident upon cavity, overall light efficiency be high.
The beneficial effect that additional technical feature of the present invention has will be described in this specification embodiment part.
Accompanying drawing explanation
Fig. 1 is a kind of structural representation of the Flip-Chip Using of prior art;
Fig. 2 is the another kind of structural representation of the Flip-Chip Using of prior art;
Fig. 3 is the structural representation of the LED encapsulation structure in one of them embodiment of the present invention;
Fig. 4 is the cancellated schematic diagram of right-angled trapezium plasticity catoptric arrangement part of LED encapsulation method of the present invention;
Fig. 5 is the schematic diagram of attached heat resistant plastics's counterdie of LED encapsulation method of the present invention;
Fig. 6 is the schematic diagram of the die bond of LED encapsulation method of the present invention;
Fig. 7 is the schematic diagram of the injecting glue of LED encapsulation method of the present invention;
Fig. 8 is the schematic diagram of the cutting of LED encapsulation method of the present invention.
In Fig. 3-Fig. 8,10-LED flip-chip; The electrode surface of 11-LED flip-chip; 12-electrode; 20-catoptric arrangement part; 21-cavity; 21a-open top; 21b-bottom opening; The upper surface of 22-catoptric arrangement part; The lower surface of 23-catoptric arrangement part; 24-flange; The inwall of 25-cavity; The lateral surface of 26-catoptric arrangement part; 30-packing colloid; 40-catoptric arrangement part sheet material; 50-counterdie; 60-line of cut.
Embodiment
And the present invention is described in detail in conjunction with the embodiments below with reference to the accompanying drawings.It should be noted that, when not conflicting, the feature in following embodiment and embodiment can combine mutually.
Fig. 3 is the structural representation of the LED encapsulation structure in one of them embodiment of the present invention.As shown in the figure, LED encapsulation structure comprises: catoptric arrangement part 20, LED flip chip 10 and packing colloid 30, wherein, described catoptric arrangement part 20 is moulding, catoptric arrangement part 20 has cavity 21, is respectively arranged with the open top 21a be communicated with described cavity 21 and bottom opening 21b in the upper surface 22 of described catoptric arrangement part 20 and lower surface 23.Preferably, the longitudinal section of the inwall 25 of described cavity 21 is herringbone, and the smooth reflecting effect of inwall 25 of described cavity 21 is good.Preferably, the inwall 25 bottom described cavity 21 is provided with inwardly outstanding flange 24, this flange 24 is for locating LED flip chip 10.Preferably, the lateral surface 26 of described catoptric arrangement part 20 is vertical with described lower surface 23 with described upper surface 22, to facilitate processing.
Described LED flip chip 10 is arranged in described cavity 21, and the electrode surface 11 of described LED flip chip 10 is towards described bottom opening 21b, the electrode surface 11 of described LED flip chip 10 and the either flush of described flange 24, the electrode 12 of described LED flip chip 10 stretches out from described bottom opening 21b, and the end face of described electrode 12 is concordant with described lower surface 23, so that directly welding circuit uses.
Described packing colloid 30 (not shown in Fig. 3) is filled in described cavity 21 to encapsulate described LED flip chip 10.
LED encapsulation structure in the embodiment of the present invention is owing to have employed said structure, the light that flip-chip 10 sends downwards can from the direct outgoing of bottom opening 21b, the light part upwards sent directly can pass packing colloid outgoing, by also can through fluorescence packing colloid after reflection on the inwall that another part light sent upwards is incident upon cavity, overall light efficiency be high.
Present invention also offers a kind of method for packing of above-mentioned LED encapsulation structure, as shown in Fig. 4-Fig. 8, method for packing comprises the following steps:
Step a, the injection moulding of employing plastic material form catoptric arrangement part sheet material 40, and described catoptric arrangement part sheet material 40 has the described cavity 21 (as shown in Figure 4) of some arrangements in matrix.Plastic material preferably gathers terephthalate p-phenylenediamine (PPD) PPA plastics, poly terephthalic acid 1,4-CHDM ester PCT resin, epoxy film EMC resin from modification.Wherein two hypotenuses of isosceles trapezoid plasticity catoptric arrangement part 23 form a cavity of falling the Eight characters.
Step b, on the lower surface of described catoptric arrangement part sheet material 40, paste counterdie 50, make the bottom opening 21b of described cavity 21 close (as shown in Figure 5).Counterdie 50 is preferably heat resistant plastics's film.
Step c, flip-chip 10 is put into described cavity 21 carry out die bond, the electrode 12 of described flip-chip 10 abuts against on described counterdie 50 (as shown in Figure 6).
Steps d, encapsulating material is injected described cavity 21, form described packing colloid 30.Encapsulating material height concordant with the upper surface of catoptric arrangement part sheet material 40 (as shown in Figure 7).
Packing colloid 30 described in step e, baking-curing.Preferably, at temperature 150 ± 5 DEG C, solidify 30 ~ 60min, the setting of temperature section can carry out corresponding adjustment according to encapsulating material difference.
After step f, solidification, cut along line of cut 50 pairs of catoptric arrangement part sheet materials 40 under baking temperature, cut to described plasticity net bottom film thickness 1/2 ~ 3/4 place, form described catoptric arrangement part 20.High-temperature machining, there is not cutting stress and cause and scrap, rate of finished products is high, low cost of manufacture.
Step g, removed by counterdie 40, sorting obtains required LED encapsulation structure.
From technical scheme above, by the LED encapsulation structure that LED encapsulation method of the present invention obtains, the light that flip-chip sends downwards can between outgoing, the light part upwards sent directly can pass the outgoing of fluorescence packing colloid, and the light that another part light sent upwards is incident upon both sides right-angled trapezium plasticity catoptric arrangement part is by also can through fluorescence packing colloid after reflection, overall light efficiency is high, also there is not cutting stress and causes and scrap, rate of finished products is high, low cost of manufacture.
The above embodiment only have expressed several execution mode of the present invention, and it describes comparatively concrete and detailed, but therefore can not be interpreted as the restriction to the scope of the claims of the present invention.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.
Claims (11)
1. a LED encapsulation structure, is characterized in that, comprising:
Catoptric arrangement part (20), described catoptric arrangement part (20) has cavity (21), is respectively arranged with the open top (21a) and bottom opening (21b) that are communicated with described cavity (21) in the upper surface (22) of described catoptric arrangement part (20) and lower surface (23);
LED flip chip (10), described LED flip chip (10) is arranged in described cavity (21), and the electrode surface (11) of described LED flip chip (10) is towards described bottom opening (21b); And
Packing colloid (30), described packing colloid (30) is filled in described cavity (21) to encapsulate described LED flip chip (10).
2. LED encapsulation structure according to claim 1, is characterized in that, described catoptric arrangement part (20) is moulding.
3. LED encapsulation structure according to claim 1, is characterized in that, the longitudinal section of the inwall (25) of described cavity (21) is herringbone.
4. LED encapsulation structure according to claim 3, it is characterized in that, the inwall (25) of described cavity (21) bottom is provided with inwardly outstanding flange (24), the electrode surface (11) of described LED flip chip (10) and the either flush of described flange (24).
5. LED encapsulation structure according to claim 1, is characterized in that, the lateral surface (26) of described catoptric arrangement part (20) is vertical with described lower surface (23) with described upper surface (22).
6. LED encapsulation structure according to claim 1, it is characterized in that, the electrode (12) of described LED flip chip (10) stretches out from described bottom opening (21b), and the end face of described electrode (12) is concordant with described lower surface (23).
7. LED encapsulation structure according to claim 1, is characterized in that, described packing colloid is mixed with fluorescent material in (30).
8. LED encapsulation structure according to claim 1, is characterized in that, the end face of described packing colloid (30) is concordant with the upper surface (22) of described catoptric arrangement part (20).
9. a method for packing for LED encapsulation structure as claimed in any of claims 1 to 8 in one of claims, is characterized in that, comprises the steps:
A, the injection moulding of employing plastic material form catoptric arrangement part sheet material (40), and described catoptric arrangement part sheet material (40) has the described cavity (21) of some arrangements in matrix;
B, on the lower surface of described catoptric arrangement part sheet material (40), paste counterdie (50), the bottom opening (21b) of described cavity (21) is closed;
C, described flip-chip (10) is put into described cavity (21) carry out die bond, the electrode (12) of described flip-chip (10) abuts against on described counterdie (50);
D, encapsulating material is injected described cavity (21), form described packing colloid (30);
Packing colloid (30) described in e, baking-curing;
F, cut described catoptric arrangement part sheet material (40) and form described catoptric arrangement part (20); And
G, remove described counterdie (50).
10. LED encapsulation method according to claim 9, is characterized in that, in step f, and high-temperature machining under baking temperature, and 1/2 ~ 3/4 place being cut to described counterdie (50) thickness.
11. LED encapsulation method according to claim 9, is characterized in that, in step a, described plastic material is that modification gathers terephthalate p-phenylenediamine (PPD) plastics, poly terephthalic acid 1,4-CHDM ester resin or epoxy film resin.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410528562.3A CN105576107B (en) | 2014-10-09 | 2014-10-09 | LED encapsulation structure and its method for packing |
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| CN201410528562.3A CN105576107B (en) | 2014-10-09 | 2014-10-09 | LED encapsulation structure and its method for packing |
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| CN105576107A true CN105576107A (en) | 2016-05-11 |
| CN105576107B CN105576107B (en) | 2018-02-13 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108666307A (en) * | 2017-03-28 | 2018-10-16 | 江苏博睿光电有限公司 | CSP light source and preparation method thereof |
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| CN103515513A (en) * | 2012-06-19 | 2014-01-15 | 晶元光电股份有限公司 | Method for manufacturing light-emitting device |
| CN103531692A (en) * | 2012-06-29 | 2014-01-22 | 日东电工株式会社 | Phosphor layer-covered LED, producing method thereof, and LED device |
| CN204204913U (en) * | 2014-10-09 | 2015-03-11 | 广东德豪润达电气股份有限公司 | LED encapsulation structure |
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2014
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Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040173808A1 (en) * | 2003-03-07 | 2004-09-09 | Bor-Jen Wu | Flip-chip like light emitting device package |
| US20080303039A1 (en) * | 2007-06-08 | 2008-12-11 | Philips Lumileds Lighting Company, Llc | Mount for a Semiconductor Light Emitting Device |
| CN102884645A (en) * | 2010-01-29 | 2013-01-16 | 西铁城电子株式会社 | Method for producing light-emitting device and light emitting device |
| CN103515513A (en) * | 2012-06-19 | 2014-01-15 | 晶元光电股份有限公司 | Method for manufacturing light-emitting device |
| CN103531692A (en) * | 2012-06-29 | 2014-01-22 | 日东电工株式会社 | Phosphor layer-covered LED, producing method thereof, and LED device |
| CN204204913U (en) * | 2014-10-09 | 2015-03-11 | 广东德豪润达电气股份有限公司 | LED encapsulation structure |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108666307A (en) * | 2017-03-28 | 2018-10-16 | 江苏博睿光电有限公司 | CSP light source and preparation method thereof |
| CN108666307B (en) * | 2017-03-28 | 2020-07-28 | 江苏博睿光电有限公司 | CSP light source and preparation method thereof |
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| CN105576107B (en) | 2018-02-13 |
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Effective date of registration: 20190911 Address after: 519000 Guangdong city of Zhuhai province high tech Zone Tangjiawan town Jinfeng Road No. 1 office building on the third floor Room 301 Patentee after: Guangdong Elec-Tech Lighting Electrical Co. Ltd. Address before: Xiangzhou District of Guangdong city in Zhuhai province 519000 tangjiewan Jinfeng Road, No. 1 Patentee before: Guangdong Electech International Inc. |
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Address after: 519000 Guangdong city of Zhuhai province high tech Zone Tangjiawan town Jinfeng Road No. 1 office building on the third floor Room 301 Patentee after: Zhuhai Leishi Lighting Co.,Ltd. Address before: 519000 Guangdong city of Zhuhai province high tech Zone Tangjiawan town Jinfeng Road No. 1 office building on the third floor Room 301 Patentee before: ELEC-TECH INTERNATIONAL Co.,Ltd. |